CN1227659A - A stablilized polysilicon resistor and a method for manufacturing it - Google Patents
A stablilized polysilicon resistor and a method for manufacturing it Download PDFInfo
- Publication number
- CN1227659A CN1227659A CN97197118A CN97197118A CN1227659A CN 1227659 A CN1227659 A CN 1227659A CN 97197118 A CN97197118 A CN 97197118A CN 97197118 A CN97197118 A CN 97197118A CN 1227659 A CN1227659 A CN 1227659A
- Authority
- CN
- China
- Prior art keywords
- resistor
- fluorine atom
- fluorine
- concentration
- main body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
A resistor has a resistor body of polycrystalline silicon and electric terminals arranged on and/or in the resistor body. A resistor portion is thus formed between the terminals, which gives the resistor its resistance. The material in the resistor body is doped with for example boron. In order to block unsaturated silicon bonds in grain boundaries to a sufficient extent and thereby give the resistor a good long-time stability, fluorine atoms are added to the material. They are added in such a high concentration that all of the otherwise unsaturated bonds are coupled to fluorine atoms. Further, it is provided in the manufacture of the resistor that the concentration is maintained at the originally high value. When ion implanting dopants and fluorine atoms it can be accomplished by performing an annealing after implanting dopants at a high temperature and then a further annealing operation at a low temperature after the subsequent implantation of fluorine.
Description
The present invention relates generally to electronic component, relate generally to and be used for electronic component electronic integrated circuit or that prepare by the processing method that is used to produce electronic integrated circuit, particularly resistor of making by polysilicon and the method for making this quasi-resistance device.
Also claim the polyresistor of many silicon to use for three more than ten years at electronic applications.Make the method for polysilicon and make method of resistor equally well-known by polysilicon.How control the resistivity of polysilicon to the material thereby to obtain needed value also be well-known by adding dopant.At ISBNO-89838-259-9, Kluver Academic Publishers, 1998, " polysilicon that is used for integrated circuit " book that T.Kamins showed is described general technology.
Stability requirement at the included resistor of circuit in the Analogical Electronics is high especially: for when circuit is used always for the resistor in this circuit, should satisfy the specification requirement that the maximum of resistance absolute value is allowed variation, and the resistance variations of the resistor of coupling should be total resistance ratio each other that keeps when circuit is used mutually.Therefore these requirements are included in the whole process that circuit uses resistor and must enough stablize.
Be used for the application of the key component of electronic circuit at polyresistor, the stable deficiency of this quasi-resistance device is a known practical problem.The fact is that resistor changes its resistance value in unpredictable mode in it uses.This class and designer institute determined value depart from and the resistance value of matched resistor depart from the operation that can jeopardize the electronic circuit that contains this quasi-resistance device.Find in the unsaturated bond of instable reason in being present in the polycrystalline silicon material crystal boundary.Owing to there is not the silicon atom cycle order in the intragranular lattice at the crystal boundary place, unsaturated bond is formed in the crystal boundary between each single grain of polycrystalline silicon material.Be four keys of the patterned features that forms silicon crystal, so the outermost layer silicon atom of crystal grain there is not abundant silicon atom as its arest neighbors.Thereby the unsaturated linkage of gained crystal boundary serves as the trap of charged carriers is bonded to crystal boundary with electric charge, and influence transmits the material property of charged carriers, and then influences the resistivity of material.
If the number of all time durations bound charges that use keeps constant, there be not any problem relevant so with resistor stability when finishing the manufacturing of resistor and at resistor.Yet, if each atom enters crystal boundary and is attached to unsaturated linkage from crystal grain migration, thereby prevent the latter, so the trap decreased number continuously as the trap of charged carriers.Similarly, stay in the position of crystal boundary under the situation of unsaturated linkage thereby leave them at atom, the trap number increases.
As everyone knows, unsaturated linkage can seal by adding hydrogen atom to crystal boundary.The hydrogen enrichment is present in the layer of deposit on the integrated circuit that contains the polycrystalline resistor; for example; in the passivation layer of silicon dioxide or silicon nitride; as 20-25% be present in the passivating film of silicon nitride; the passivating film of silicon nitride is by the plasma CVD manufacturing, and is generally used for protecting the protection of completed integrated circuit and element.
Hydrogen atom and unsaturated linkage reaction are also sealed them, and they can not continue as trap like this.Yet the problem relevant with the unsaturated linkage bonded hydrogen atom is that the bonding force of comparing between hydrogen and the silicon with silicon and the bonding between the silicon is low.So the key easy fracture, hydrogen atom exposes unsaturated linkage again from their position diffusion of crystal boundary then.Because unsaturated linkage is captured charged carriers, cause resistance value to change.The reason of bond fission is also not exclusively understood, but changes relevant with the comprehensive local temperature that raises or caused by the generating that increases in the resistor critical point of temperature.Yet, can not get rid of the pure dynamic effect that causes owing to the migration charged carriers and make bond fission.
If at crystal boundary place hydrogen atom and silicon atom bonding is not enough strong,, can not gets rid of and be positioned at crystal boundary by chance or make it produce other atom of similar effect although the ability of hydrogen atom sealing unsaturated linkage at first will be discussed herein.Here do not point out the size that influences to it should be noted that resistor also has identical influence with hydrogen atom is the same to resistivity with the synergistic foreign atom of dynamics mode and crystal boundary between the operating period.Do not get rid of other the contained atomic species of resistor and the impurity of unconscious interpolation equally and have same affect.
The stable resistor that polysilicon constituted is open in the International Patent Application WO 97/10606 of publishing.The resistor material of main part alms giver that advocated peace that mixes.For the carrier traps of sealing crystal boundary to enough degree and give the resistor good stability, when testing different material and good lasting stability by preparation technology's technical finesse sequence of steps, carry out high-concentration dopant with donor atom, make when not having acceptor atom substantially, so just think that material is difficult to doping substantially when having only donor atom to be present in the material.The concentration of dopant atoms that this meaning is quite high, and shown that in the above these atoms can move into and move out to a certain extent through grain boundary migration.Therefore heat treated or annealing operation cause that the fractional condensation mechanism that foreign atom is positioned at crystal boundary also is effectively when low temperature, although degree is lower.Therefore come this stable quasi-resistance device stability not enough by counter doping.
Counter doping need add at least two kinds of dopants with the high concentration of accurate balance, promptly at least a alms giver and at least a being led, and this is difficult to realize in technology.
Other suitable species atom that the sealing more effective and more stable than the unsaturated linkage of finishing by hydrogen atom can form enough strong bonding by the silicon atom of interpolation and silicon wafer circle produces.Therefore, in people's such as Lieu United States Patent (USP) 5212108, disclose the method for making polyresistor, resistor is used for memory cell here.For the resistivity of determining material is injected arsenic ion in polysilicon film.After this injection of fluorine ion makes crystal boundary stable.Thereby the barrier height that has reduced the charge carrier between the circuit chip of different production batch changes.Carry out 900 ℃ annealing after injecting fluorine.
Yet, the polyresistor that this mode the is made long-time stability deficiency that seems usually.
The electrical characteristics of combination film transistor and solar cell have been studied the influence to the crystal boundary of polysilicon film of hydrogen and fluorine, referring to as S.Maegawa, T.Ipposhi, S.Maeda, H.Nishimura, T.Ichiki, M.Ashida, O.Tanina, Y.Inoue, " the Performance and Reliablity Improvents in Poly-Si TFTs byFluorine Implantation into Gate Poly-Si " that T.Nishimura and N.Tsubouchi showed, IEEE Trans.ElectronDevices, Vol.42, pp.1106-1112 (1995) and A.Yoshida, M.Kitagawa, F.Tojo, N.Egashira, K.Nakagawa, " hydrogen; fluorine ion injects the influence to polysilicon grain boundary " that T.Izumi and T.Hirao showed, solar energy materials and solar cell, Vol.34, pp.211-217 (1994).
The purpose of this invention is to provide polyresistor with good lasting stability, it can be used in particular for precise electronic circuit as the analogue type circuit with secured fashion, be used for for example measuring or as the circuit relevant with transducer, the resistance value that for example is included in the resistor in the amplifier circuit here directly influences the output signal of expression measured value.
The stability of polyresistor is not enough or unreliable at least or unexpected under many circumstances, the solution of the problem relevant that exposes above with polyresistor stability, such just as already described, be that unsaturated linkage with the polycrystalline silicon material crystal boundary seals and realizes, and situation about existing when using circuit, finish " locked in " operation in permanent substantially mode.Such " locked in " operation can be sealed by the atom of suitable species by guaranteeing the minimized number unsaturated linkage, and the bonding of the silicon atom of this kind atom and polycrystalline silicon material crystal boundary is enough finished by force.The atom that adds should required residue operation mate and not disturb with producing electronic circuit.As mentioned above, compare fluorine and the silicon bonding is stronger with hydrogen, so fluorine is a preferred type atom of finishing the " locked in " operation of unsaturated linkage.The fluorine atom physical presence that the fluorine atom that also must guarantee to provide sufficient amount at least during making resistor is introduced to crystal boundary and this minimum number, or the introducing fluorine atom of enough at least shares or ratio is up to being present in during the subsequent fabrication steps of finishing electronic circuit on their position, crystal boundary place.
Therefore, for the optimization that realizes resistor is stable, the concentration of the fluorine atom of interpolation must surpass a certain minimum level.This minimum level should surpass, and under the situation that the injection of boron makes by the boron fluoride ion in film, fluorine atom adds in the polysilicon film of doped with boron and the fluorine atom concentration level that brings sometimes.Yet if fluorine is heat-treated under the high temperature after injecting or annealed, this is generally used for making and for example is used in the circuitry processes activate as injecting the propelling or the diffusing step of the atom that is added, and will have to adjacency effects.For recovering the lattice damage that implant operation produced, these high temperature are thought necessary.Yet it has caused the bond fission of fluorine and silicon and fluorine atom to overflow from material.
Annealing temperature after regulate injecting fluorine makes it not too hang down to be enough to recover to damage and not too high again causing under the situation that fluorine atom can leave crystal boundary, obtains wonderful good result.If the injection fluorine atom is afterwards to divide other step to anneal, this is highly susceptible to realizing, therefore need not combine with for example annealing operation, annealing operation is for the lattice damage that processing step produced before the recovery injection fluorine and is that the activation dopant relevant with the required donor atom of being advocated peace of above-mentioned injection is necessary.
To aforesaid counter doping method, for obtaining stable resistor, preferred fluorine atom adds this technology in the material to, this is because for obtaining the desired electrical resistance of resistor, only need or be subjected to mainly to add in the material and need not too accurately to control the interpolation of fluorine, as long as the fluorine atom of sufficient amount is kept in the polycrystalline silicon material with the concentration of accurate control with the single alms giver of minimum.The step of adding fluorine also can join under a stable condition easilier produces in the required technological process of the complexity that comprises resistor or ball bearing made using.
Generally speaking, in traditional approach, resistor comprises the resistor main body of polysilicon, and it has as longilineal rectangular tab existence as one, electric terminal is arranged on the resistor main body and/or in the resistor main body, thereby obtains the resistor part between the terminal of determining the resistor value.The material doped dopant of resistor part, led and/or the alms giver, so resistor obtains desirable resistance.This material also comprises sealing atom, fluorine atom.For obtaining enough stability, material should have the structure of recovery, and this structure is realized by suitable annealing operation injecting under the situation of adding dopant and fluorine atom by ion.Yet,, do not need this special annealing adding atom in other method of polysilicon.The fluorine atom of material exists in the mode of high concentration in any case, other unsaturated linkage a large amount of, maximum at polysilicon grain boundary place is closed, thereby when resistor was used for electronic circuit, the resistance of resistor part keeps constant substantially.Can say that also the unsaturated linkage of basic all silicon atoms is sealed by fluorine atom or is coupled in the polysilicon in this way.
If with in the concentration of the material gained that the corresponding resistor rate is arranged as many or equate that this material only utilizes boron fluoride and do not have other kind alms giver or acceptor doping, these conditions all can be met the fluorine atom concentration in the material in many cases at least.Under many actual conditions, be 2*10 at least in the concentration of fluorine atom
19Cm
-3Situation under also can satisfy this condition.
In making this quasi-resistance device, at first produce the resistor main body, as have film or thin layer that suitable configuration is made by polysilicon.When preparation during main body and/or use special step subsequently,, make resistor have desirable resistance with one or more dopant doped body materials.Provide fluorine atom to material of main part in a certain way, electric terminal is installed in main body, the resistor element that can obtain finishing.Fluorine atom must add with aforesaid sufficiently high high concentration then.Material only stands lower temperature and makes fluorine atom not obvious from the effusion of main body after fluorine atom adds, and the same high value of the fluorine atom concentration of material when remaining actual interpolation fluorine atom substantially.These temperature should be up to 800 ℃, and particularly are lower than 750 ℃.
Injecting by ion under the situation of carrying out also adding by ion injection carrying out fluorine atom subsequently,, after dopant injects and before the injection fluorine atom, under first temperature, anneal for finishing aforesaid recovery operation with the dopant doping.For not from the resistor main body fluorine atom of obviously overflowing, then, after injecting fluorine atom, separate annealing operation in second temperature, second temperature is far below first temperature.Should be up to or be lower than 800 ℃ by above-mentioned discussion second temperature, particularly the highlyest be or be lower than 750 ℃.For fully recovering implant damage, temperature should minimumly be or be higher than 650 ℃ in many cases.
Description describes the present invention in detail by non-limiting examples:
-Fig. 1 is that the top layer that comprises as other integrated component and passivation layer is omitted by the cross sectional representation of the resistor of polysilicon manufacturing,
-Fig. 2 is the figure from the viewed resistor in top, and the subregion of doped with fluorine atom is greatly amplified,
-Fig. 3 is illustrated in doped with boron, interpolation and does not add fluorine and separately under the situation of annealing operation, by the relative resistance figure of the made resistor of polysilicon at 98 ℃ of long-time test periods,
Fig. 4 is how the resistance of explanation polyresistor depends on the interpolation of fluorine and the figure of annealing temperature,
Fig. 5 a and 5b are the charts that explanation distributes by boron atom in the polysilicon film of the annealing operation manufacturing of interpolation fluorine and different modes and fluorine atom,
Fig. 6 is how the resistance that explanation has the interpolation fluorine of varying number and stands the polysilicon film of the single annealing under the common high treatment temperature depends on the chart that diffuses into the hydrogen in the material,
Fig. 7 is that explanation has the interpolation fluorine of varying number and stand two resistance that separate the polysilicon film of annealing steps how to depend on the chart that diffuses into the hydrogen in the material,
Fig. 8 is that expression is by doped with boron, interpolation with do not add the relative resistance figure of the prepared resistor of polysilicon during 98 ℃ of long period of experiments of fluorine, here the resistor that adds fluorine stands two annealing operations, one is 1000 ℃ of direct annealing 30 minutes after injecting boron, one is 700 ℃ of direct annealing 30 minutes after injecting fluorine
Fig. 9 is expression by doped with boron, interpolation and the prepared resistor of polysilicon that do not add fluorine at 98 ℃ of relative resistance figure during standing the long period of experiments of voltage, the resistor that adds fluorine stands two annealing operations, one is 1000 ℃ of direct annealing 30 minutes after injecting boron, one is 700 ℃ of direct annealing 30 minutes after injecting fluorine
Figure 10 is that expression is by doped with boron, interpolation with do not add the relative resistance figure of the prepared resistor of polysilicon during 150 ℃ of long period of experiments of fluorine, the resistor that adds fluorine stands two annealing operations, one is 1000 ℃ of direct annealing 30 minutes after injecting boron, one is 700 ℃ of direct annealing 30 minutes after injecting fluorine
Figure 11 is expression by doped with boron, interpolation and the prepared resistor of polysilicon that do not add fluorine at 150 ℃ of relative resistance figure that stand the long-time test period of voltage, resistor has stood two annealing operations, one is 1000 ℃ of direct annealing 30 minutes after injection boron, and one is 700 ℃ of direct annealing 30 minutes after injecting fluorine.
The cross-sectional view of an example of expression polyresistor among Fig. 1.Resistor forms on supporting construction 1, and supporting construction 1 comprises integrated component, and has insulating layer of silicon oxide 3 at its top, and insulating barrier 3 for example is the oxide that heat growth is produced, and naturally also but deposited oxide.In the embodiment shown, the bottom of supporting construction 1 is provided with the silicon substrate 5 as silicon single crystal wafer, it on substrate 5 tops silicon substrate region 7 with zones of different, different material diffuses into material at this, the layer structure 9 that comprises insulating material and polysilicon arranged on the top of substrate zone, oxide skin(coating) 3 is arranged at the top of this structure.Platform or " table top " 11 are set on oxide skin(coating) 3, and it is the resistor main body, observes from top to be as rectangle, also can be referring to the figure that observes the resistor main body from top of Fig. 2.Resistor main body 11 comprises and providing or inside or the mid portion 13 and quite highly doped and thereby the quite little perimeter that is used to electrically contact 15 of resistance of the part of definite resistor.
The upper surface of the assembly of supporting construction 1 and resistor main body 11 covered by silicon dioxide layer 17 and its on covered by silicon nitride layer 19 again, but also can on the assembly top, be provided with comprise passive or active Electrical and Electronic device other the layer.Respectively by silicon nitride or silicon dioxide, or the unshowned passivation layer that both constitute together under any circumstance all can be arranged on the top.Form hole 21 through oxide skin(coating) 17 and silicon nitride layer 19 down to the upper surface of contact area 15.For further improve with as the electrically contacting of the aluminium conductor path 25 that is electrically connected of resistor, provide regional 23 in contact area 15 surfaces of hole 21 inside.Zone 23 comprise contain just like from add layer diffuse into the titanium of material or conduction, the diffusion impervious layer of some titanium compounds.
Refer now to specific example and describe the manufacturing of the polyresistor of traditional approach, referring to aforesaid U.S patent.The resistance of resistor is determined by doped with boron.
Example 1
By known CVD method (chemical vapor deposition) deposition thickness on the thermal silicon dioxide of thickness 9000 dusts is the polysilicon film of 5500 dusts.By the silicon dioxide of CYD at about 5500 dusts of polysilicon film end face deposition thickness.Wherein, under 1050 ℃, annealed 30 minutes subsequently in order to determine the grain size of polysilicon.The etching polysilicon surface is removed oxide, then with concentration 9.4*10 in energy 80keV, the film
18Cm
-3Inject boron.Afterwards, the mask that photoetching limits is coated on polysilicon, and by the etching device that has a resistance.After this, by the silicon dioxide of CVD method, subsequently with about 45 minutes of 1000 ℃ of annealing at 400 ℃ of deposition thickness 6500 dusts.The back is a handling process of making technical field of integrated circuits normally, comprises in the photoetching qualification, hydrogen of etching contact hole, metallization, conductor path 420 ℃ of alloyings 20 minutes with the passivation of the silicon nitride of thickness 9000 dusts.Nitride produces by plasma enhanced CVD (PECVD).The polysilicon film of resistor has the body resistance rate of 605 ohms/square.
Resistor is installed in the ceramic vessel of sealing, subsequently under 98 ℃ and 150 ℃ at applied voltage 30V with do not carry out accelerated tests 1000 hours under two kinds of situations of applied voltage, measure the resistance after 0,168,500 and 1000 hour at ambient temperature.The relative resistance curve result who in the chart of Fig. 3 and Fig. 8-10, has shown X=0.Can find out obviously that from figure the resistance of comparing resistor with the resistance value of experiment beginning has increased up to 2%.This kind order of magnitude changes the maximum that is allowed above the artifical resistance device in the critical applications and changes.Thereby this example has illustrated aforesaid problem, and the polysilicon of a doped with boron can not obtain sufficiently stable resistor.
As mentioned above, seek the reason of resistance variations and the relation of the unsaturated linkage at the crystal boundary place that is present in polycrystalline silicon material.For reducing these variations, must seal unsaturated linkage in the crystal boundary in fixing substantially mode, for example seal unsaturated linkage to sufficiently high degree by atom such as the fluorine atom that suitable species is set, the silicon atom bonding of fluorine atom and crystal boundary is enough strong, and under any circumstance fluorine atom is eager to excel than the bonding of hydrogen atom and silicon atom with the bonding of silicon atom.
Fig. 2 has illustrated that fluorine atom has added the zonule signal part enlarged drawing of polyresistor to.How they self are distributed in the crystal grain 31 respectively and in the crystal boundary 33 to this shows acceptor atom A, fluorine atom F, carrier traps T and possible hydrogen atom H.Therefore fluorine atom and hydrogen atom are preferably placed at crystal boundary.
Now provide with fluorine atom and added wherein the relevant specific example of polyresistor to.
Example 2
Pressing on the made polysilicon film of example 1, with concentration 9.4*10 in 80keV, the film
18Cm
-3Inject boron, first group of film fluorine concentration is 1.9*10 under 120keV subsequently
19Cm
-3, and second group of film concentration is 1.9*10
20Cm
-3Handle film with example 1 same way as after injecting.Carrying out 1000 ℃ of annealing influences the injection of boron and fluorine.Make resistor by example 1 by the polysilicon film of gained.The polysilicon film of resistor is P-type and the resistor body resistance rate that 610 and 565 ohms/square are arranged respectively.
Resistor is installed in ceramic vessel, carries out accelerated tests 1000 hours at 98 ℃ and 150 ℃ subsequently, measures 0,168,500 and 1000 hour resistance afterwards at ambient temperature.98 ℃ result illustrates by two lower curves of Fig. 3.This figure is explanation by the relative resistance of the resistor of the polysilicon of example 1 (upper curve) and example 2 (lower curve) made length 200 μ m, wide 20 μ m acceleration stress test under 98 ℃, voltage 30V.As can be seen from Figure 3 the increase of the resistor of doped with fluorine basically with the resistor of doped with fluorine not as many, and only lower resistance variations on a small quantity.This situation is relevant with 1000 ℃ high annealing temperature, and curve shows adopt the importance of annealing way.Be the stability that obtains increasing, fluorine atom must be still on their position, crystal boundary place, and must not be shifted basically during the manufacturing step after they add material to.Be to recover ion and inject the crystal lattice damage that produces, be used for above-mentioned example and usually the used high temperature of treatment step after injecting be commonly considered as necessity.Yet too high temperature causes the bonding fracture between fluorine and the silicon, and fluorine atom is overflowed from material.
Therefore the annealing temperature after fluorine adds must be suitable, thereby temperature can not be too low, so that may damaging that implant operation produced fully recovered, but can not make temperature height to fluorine atom leave crystal boundary.The method that realizes this is to inject after the fluorine to anneal with independent step under the low temperature, and need not to combine with the annealing steps of for example required front and revert to the crystal lattice damage that obtains desired resistance value and add dopant and cause when activating dopant.
Comprise fluorine add after this manufacture method example of reduction process temperature will describe in detail hereinafter.
Example 3
Inject boron pressing on the example 1 prepared polysilicon film with 80keV, concentration is 9.4*10 to the film
18Cm
-3By the silicon dioxide of CVD at about 5500 dusts of polysilicon film deposited on top thickness.Annealed 30 minutes down for 1000 ℃ then, the etching polysilicon surface makes it oxide-free, then injects fluorine with the 120keV energy, and concentration range is (0-9.4) * 10 in the film
19Cm
-3Afterwards, the mask of photoetching qualification puts on polysilicon and etched resistor.By CVD after the thick silicon dioxide of 400 ℃ of deposit 6500 dusts, then 700 ℃ of annealing 30 minutes.Be present technique field normal handling flow process then, comprise in the photoetching qualification, hydrogen of etching contact hole, metallization, conductor path 420 ℃ of alloyings 20 minutes with the silicon nitride passivation of thick 9000 dusts.Produce nitride by plasma enhanced CVD.The polysilicon film of resistor has the resistivity of 650-700 ohms/square resistor main body.
Resistor is installed in the ceramic vessel, and stands subsequently senile experiment and acceleration 1000 hour time cycle of stress test under 98 ℃ and 150 ℃, measures the resistance after 0,168,500 and 1000 hour at ambient temperature.Can find out resistance value from the chart of Fig. 8-11, the drawn curve representation of solid line does not add the sample of fluorine, promptly presses the resistance of example 1 made sample.The wide 20 μ m of the long 200 μ m of resistor.Resistor is biasing and obtain the value of Fig. 8 and 10 respectively under 98 and 150 ℃ not, and resistor is added 30V voltage and obtain the value of Fig. 9 and 11 respectively under 98 and 150 ℃.Can find out that from the curve of Fig. 8-11 concentration of doped with fluorine and fluorine is about 1/2nd of the resistance of resistor of the twice of the boron concentration resistance variations that increases to those resistors of doped with fluorine not.When fluorine concentration is increased to five times of boron concentration, obtain stronger improvement.This has illustrated to make under the situation of resistor by described method and can obtain stablizing effect.
Because for example hydrogen is included in by in the made silicon nitride passive film of plasma CVD, when it is directly exposed to nitrogen atmosphere following time, the gained film does not change their resistivity value, and this point is also very important.Therefore standing under 420 ℃ in percent by volume by some made films of top different examples is that the acceleration hydrogen that 10% hydrogen mixes with 90% nitrogen in the hydrogen atmosphere of composition was tested 20 minutes.Hydrogen treat fore-and-aft survey resistance, and calculate test resistance with respect to the resistance value of experiment beginning and change.The invertibity of hydrogen bonding can be confirmed by the processing in 510 ℃ of pure nitrogen gas subsequently.
Fig. 7 represents the resistance value measured, marks and draws relative resistance along the vertical axis of chart, and marks and draws different situations along trunnion axis.The value that Far Left is represented does not stand hydrogen treat, the value shown in the centre, and resistor lives through hydrogen and nitrogen mixture is handled, and the value shown in the rightest, resistor has stood at first admixture of gas and the processing of pure nitrogen gas at last.Press example 1 and 3 and make resistor.In pressing the made film of example 1, find maximum the variation in the film that does not promptly have fluorine to add.This dotted line at Fig. 7 " has only boron " and obtains explanation.The relative resistance of other curve representation film, this film doped with fluorine concentration 1.9*10
19Cm
-3, and press example 3 annealing respectively under different temperatures subsequently.Observing hydrogen sensitivity descends continuously according to annealing temperature.Set the lower limit of annealing temperature according to other reason, it with substantially or the requirement of good substantially crystal structure relevant, as described in Figure 4, discussion vide infra.
Fig. 6 represents the relative resistance value by the polysilicon film of example 1 and 2, the certain doped with fluorine of film, but the annealing temperature height after the doped with fluorine is to 1000-1100 ℃.In addition, film stands the mixture and the processing of having only nitrogen of hydrogen and nitrogen.Each curve representative (0-1.9) * 10 among the figure
20Cm
-3The fluorine concentration of spacing.For low and very high fluorine concentration, the hydrogen sensitivity of material is roughly the same in the case.From hereinafter measurement and discussion, can find out that this effect depends on that the used high temperature of annealing in process causes fluorine atom to move out of the situation of crystal boundary.
Fig. 4 represents to anneal to the curvilinear figure of the influence of the resistivity of polyresistor, and vertical axis is represented made square or sheet resistance.Resistance value is drawn as vertical line, and its central point is represented the mean value of the resistance value of made resistor, and length is represented the spreading range of resistance.Thereby the top and bottom of vertical line are represented maximum and minimum value respectively.Make resistor by each example that changes annealing operation, annealing operation can be respectively as separating step (“ ﹠amp; " expression) and joint step ("+" represent) finish, temperature is pressed the explanation of chart downside.Boron is with 9.4*10
18Cm
-3Concentration is added.
At first inject boron, inject fluorine then, and 1000 ℃ of annealing down, about 700 ohm resistance place obtains first point.Only inject boron, 1000 ℃ of annealing down subsequently, about 900 ohm resistance place obtains second point.At first inject boron, fluorine is injected in 1000 ℃ of annealing down afterwards subsequently, and 600 ℃ of annealing down of last low temperature, and about resistance value place more than 1300 ohm obtains thirdly.Except last annealing operation carries out under 700 ℃ of high temperature more, to obtain the 4th point that resistance is lower than 1000 ohm slightly with thirdly identical mode.Last the 5th expression is lower than 1000 ohm resistance slightly, only injects boron and at first 1000 ℃ of annealing down subsequently, 700 ℃ of annealing then.Each annealing steps such as top example carry out 30 minute time cycle.
From thirdly can finding out, directly boron with after fluorine injects separately, comprise fluorine atom inject after process annealing operate separate annealing process, cause the very big increase of resistance and the big expansion of resistance value.The damage of the polysilicon structure that this probably depends on injection period and is produced.Yet, for the annealing steps of higher temperature a little, can make to damage well and recover, comprise that the variation of resistance value is little, as from the 4th finding.The fluorine interpolation that comparison shows that of point 4 and 5 does not influence resistance value, and this is owing to carried out identical annealing steps at these 2.Inject the annealing of recovery damage afterwards at interval preferably between 650 ℃ and 800 ℃, particularly between 650 ℃ and 750 ℃ for fluorine.
The fluorine atom concentration that the boron atomic concentration of expression solid line in plotting distributes and dotted line is plotted in Fig. 5 a and 5b and from the big surface of the resistor main body of polysilicon film promptly along the functional relation on the thickness direction apart from d, polysilicon film presses example 2 substantially respectively and example 3 is obtained, its value is the particular value that fluorine atom injects and anneals, as finding out from chart content.Curve is obtained by the secondary ion mass spectroscopy analysis (SIMS) of film.Relatively these figure can find, carry out under the situation of 1000 ℃ of annealing after finishing the injection of boron and fluorine by Fig. 5 a, how fluorine leaves film, and carries out 1000 ℃ of annealing and inject fluorine carrying out under the situation of 700 ℃ of annealing afterwards before injecting fluorine by Fig. 5 b after injecting boron, and how fluorine is retained in the film.Under first kind of situation, fluorine concentration is from 1.9*10
20Cm
-3High concentration drops to the 1*10 at the most after the annealing
18Cm
-3, this value only is only in resistor center thickness direction really.And low concentration is only in the resistor upper and lower surface really.Under second kind of situation, remain on the high fluorine concentration of the central area of material, as the thickness direction finding.At upper and lower surface generation fluorine atom from diffuse.Suppose that the upper surface of polysilicon film is positioned at the d=0 place among the figure, and the interface between polysilicon film and the oxide is positioned at d=530nm under the film.
Aforesaid method does not limit the kind of the specified dopant of previous example, promptly is subjected to main boron.The fact is for normally used dopant species such as all main boron, aluminium, gallium and indiums of being subjected to, and uses separately or mutually combines when using when them, can obtain similar results; And, when they use separately or mutually combine use, also can obtain similar results for all alms giver's phosphorus, arsenic and antimony.Similarly, above-mentioned one or more masters of being subjected to can combine with above-mentioned one or more alms givers.The alms giver is unessential with being subjected to main adding in the material with what order so.As long as keep treatment temperature subsequently lower, so that be that best fluorine concentration remains in the completed resistor to stability, the treatment step that fluorine atom adds polycrystalline silicon material to also is unessential.
Importantly, the fluorine least concentration keeps enough high.In other cases, the crystallite dimension that depends on polycrystalline silicon material as the represented correct concentration of the mean value of great number of grains.Rule of thumb, to all types of alms givers that advocated peace, show that fluorine concentration should equal only using the concentration of fluoridizing gained in the material that has the corresponding resistor rate under the boron doped situation at least.For pressing the made material of example 3, corresponding to for example about 2*10
19Cm
-3Fluorine concentration.
Need not use above-mentioned various atom with the pure element form, but they should be included in the compound, as long as they have the decomposable character of its compound molecule, foreign atom can enter in the material during the technology of foreign atom being added to polycrystalline silicon material.
Aforesaid method is only irrelevant with thin polysilicon film, but comprises all types of polyresistors with any resistance, and the polysilicon of doped with fluorine attempts to obtain lasting stability.
Also can adopt other annealing process except that shown in each example.By using rapid thermal annealing or so-called " rapid thermal treatment (RTP) " to finish under the situation of heating steps, in completed resistor, also keep important high fluorine concentration.
The term polyresistor comprises the use polycrystalline silicon material in various uses, and the ability of material conduction greatly is subjected to the influence of material to the resistance of electric current.
Fluorine, alms giver and/or acceptor atom not only can inject by the ion of example as described and add polycrystalline silicon material to.Atom also can enter polycrystalline silicon material by the diffusing, doping agent to be added in the material.Back one method can to contain the molecular forms of desired atom, contain under the atmosphere of one or more gases by in one or several step, and the heating polycrystalline silicon material is finished.The other method that the diffusing, doping agent enters material is to be coated in the polycrystalline silicon material surface with containing the material of wanting atom to some extent, and its concentration can make these atoms diffuse into polycrystalline silicon material at the same time or in diffusion more subsequently or the annealing process.In this literary composition, only importantly technological temperature mustn't be too high, makes the fluorine concentration that exists in the material surpass the best minimum level of completed resistor lasting stability.
Claims (10)
1. resistor, the resistor main body and the electric terminal that is installed on the resistor main body and/or the resistor main body is interior that comprise polysilicon, the resistor main body comprises the resistor part between the electric terminal that provides resistor, for obtaining the polycrystalline silicon material of desired resistor doped resistor device part, and contain fluorine atom in the polycrystalline silicon material of resistor part, it is characterized in that providing fluorine atom to the polycrystalline silicon material of resistor part, its concentration height to the unsaturated linkage that makes crystal boundary is closed to and makes the resistance of resistor part keep constant degree substantially always.
2. by the resistor of claim 1, it is characterized in that the polycrystalline silicon material of resistor main body has the structure of recovery.
3. by any resistor among the claim 1-2, it is characterized in that the concentration of gained in the material that the fluorine atom concentration of material equals to have same resistivity and only use the boron fluoride ion doping at least.
4. by any resistor among the claim 1-3, it is characterized in that fluorine atom is present in the polycrystalline silicon material of resistor part with high concentration, make that the unsaturated linkage at all polysilicon grain boundary places is basic to be coupled with fluorine atom.
5. by any resistor among the claim 1-4, it is characterized in that the fluorine atom concentration in the polycrystalline silicon material of resistor part is 2*10 at least
19Cm
-3
6. a manufacturing comprises the method for resistor of polyresistor main body, comprises step:
-generation polysilicon main body, particularly polysilicon membrane,
-during making the polysilicon main body or afterwards, and for obtaining the desired resistance of resistor, with at least a dopant doped body material,
-add fluorine atom to material of main part, and
-electric terminal of main body is set,
It is characterized in that
-with high concentration add fluorine atom and
-adding after the fluorine atom, material of main part only stands an enough low temperature, and this temperature is low to moderate the fluorine atom concentration that makes material and remains on the value that interpolation operating period obtains substantially, and/or
-add fluorine atom to material of main part with enough high concentrations, its concentration is high extremely to provide the high concentration fluorine atom on completed resistor main body, make other unsaturated linkage at crystal boundary place of main body polycrystalline silicon material be sealed by fluorine atom substantially.
7. by the method for claim 6, the temperature the highest that it is characterized in that acting on after adding fluorine atom material of main part is 800 ℃, particularly the highest 750 ℃.
8. by any method among the claim 6-7, it is characterized in that
-inject by ion and to carry out the doping of at least a dopant, and after inject the interpolation fluorine atom by ion, and
-after dopant injects and before the fluorine atom injection, carry out annealing operation in first temperature, and after fluorine atom injects, carry out independent annealing operation in second temperature, and
-the second temperature is much smaller than first temperature.
9. by the method for claim 8, it is characterized in that second temperature the highest is 800 ℃, particularly be up to 750 ℃, and particularly minimum be 650 ℃.
10. by any method among the claim 6-9, it is characterized in that carrying out the interpolation of fluorine atom, thereby make the fluorine atom concentration height of material constant substantially always, and when using resistor, the unsaturated linkage of sufficient amount silicon atom is coupled by fluorine atom to the resistance that makes the resistor part.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9602395A SE511816C3 (en) | 1996-06-17 | 1996-06-17 | Resistors comprising a polycrystalline silicon resistor body and a process for producing such a |
| SE96023957 | 1996-06-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1227659A true CN1227659A (en) | 1999-09-01 |
| CN1134792C CN1134792C (en) | 2004-01-14 |
Family
ID=20403046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB971971188A Expired - Fee Related CN1134792C (en) | 1996-06-17 | 1997-06-17 | A stablilized polysilicon resistor and a method for manufacturing it |
Country Status (11)
| Country | Link |
|---|---|
| US (2) | US6140910A (en) |
| EP (1) | EP0932907B1 (en) |
| JP (1) | JP2000512807A (en) |
| KR (1) | KR100363667B1 (en) |
| CN (1) | CN1134792C (en) |
| AU (1) | AU3281697A (en) |
| CA (1) | CA2258506A1 (en) |
| DE (1) | DE69734456T2 (en) |
| SE (1) | SE511816C3 (en) |
| TW (1) | TW491411U (en) |
| WO (1) | WO1997049103A1 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100372028C (en) * | 2003-10-24 | 2008-02-27 | 上海宏力半导体制造有限公司 | Semiconductor resistance element and producing method thereof |
| CN100388463C (en) * | 2005-01-27 | 2008-05-14 | 国际商业机器公司 | Method for manufacturing precision silicon-containing resistor |
| CN102110593A (en) * | 2010-12-15 | 2011-06-29 | 无锡中微晶园电子有限公司 | Method for improving stability of polysilicon thin-film resistor |
| CN103515195A (en) * | 2012-06-26 | 2014-01-15 | 台湾积体电路制造股份有限公司 | Substrate resistor and method of making same |
| CN104517811A (en) * | 2013-10-08 | 2015-04-15 | 英飞凌科技股份有限公司 | Methods for producing polysilicon resistors |
| CN112707366A (en) * | 2020-12-29 | 2021-04-27 | 无锡中微晶园电子有限公司 | High-precision polycrystalline low-resistance process manufacturing technology |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE513116C2 (en) | 1998-11-13 | 2000-07-10 | Ericsson Telefon Ab L M | Polysilicon resistors and ways of making them |
| JP2001060668A (en) * | 1999-07-01 | 2001-03-06 | Intersil Corp | BiCMOS PROCESS IMPROVED BY RESISTOR WITH SMALL TEMPERATURE COEFFICIENT OF RESISOTOR (TCRL) |
| US6532568B1 (en) * | 2000-10-30 | 2003-03-11 | Delphi Technologies, Inc. | Apparatus and method for conditioning polysilicon circuit elements |
| KR100767540B1 (en) * | 2001-04-13 | 2007-10-17 | 후지 덴키 홀딩스 가부시끼가이샤 | Semiconductor Device |
| US6732422B1 (en) * | 2002-01-04 | 2004-05-11 | Taiwan Semiconductor Manufacturing Company | Method of forming resistors |
| JP2005217454A (en) * | 2004-01-27 | 2005-08-11 | Sanyo Electric Co Ltd | Solid-state image pickup device |
| US20070096260A1 (en) * | 2005-10-28 | 2007-05-03 | International Business Machines Corporation | Reduced parasitic and high value resistor and method of manufacture |
| US9012313B2 (en) * | 2013-03-15 | 2015-04-21 | Globalfoundries Inc. | Semiconductor device including a resistor and method for the formation thereof |
| DE102015206175A1 (en) * | 2015-04-07 | 2016-10-13 | Globalfoundries Inc. | Semiconductor device with thin-film resistor |
| JP6939497B2 (en) * | 2017-12-13 | 2021-09-22 | 富士電機株式会社 | Resistor element |
| JP7267786B2 (en) * | 2019-03-13 | 2023-05-02 | エイブリック株式会社 | Semiconductor device manufacturing method |
| JP7275884B2 (en) | 2019-06-13 | 2023-05-18 | 富士電機株式会社 | Resistance element and its manufacturing method |
| US11676961B2 (en) * | 2020-11-01 | 2023-06-13 | Texas Instruments Incorporated | Semiconductor device with low noise transistor and low temperature coefficient resistor |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4740478A (en) * | 1987-01-30 | 1988-04-26 | Motorola Inc. | Integrated circuit method using double implant doping |
| SE466078B (en) * | 1990-04-20 | 1991-12-09 | Ericsson Telefon Ab L M | DEVICE ON A SCREEN OF AN INTEGRATED CIRCUIT AND PROCEDURE FOR PREPARING THE DEVICE |
| JPH0555470A (en) * | 1991-08-26 | 1993-03-05 | Ricoh Co Ltd | Manufacture of integrated circuit |
| US5212108A (en) * | 1991-12-13 | 1993-05-18 | Honeywell Inc. | Fabrication of stabilized polysilicon resistors for SEU control |
| SE504969C2 (en) * | 1995-09-14 | 1997-06-02 | Ericsson Telefon Ab L M | Polysilicon resistor and method for making one |
| TW319911B (en) * | 1996-11-25 | 1997-11-11 | Mos Electronics Taiwan Inc | Manufacturing method of resistor by using contact hole with high aspect ratio |
-
1996
- 1996-06-17 SE SE9602395A patent/SE511816C3/en not_active IP Right Cessation
-
1997
- 1997-06-17 JP JP10502803A patent/JP2000512807A/en not_active Ceased
- 1997-06-17 DE DE69734456T patent/DE69734456T2/en not_active Expired - Fee Related
- 1997-06-17 US US08/877,059 patent/US6140910A/en not_active Expired - Fee Related
- 1997-06-17 EP EP97928598A patent/EP0932907B1/en not_active Expired - Lifetime
- 1997-06-17 WO PCT/SE1997/001071 patent/WO1997049103A1/en active IP Right Grant
- 1997-06-17 KR KR10-1998-0710363A patent/KR100363667B1/en not_active IP Right Cessation
- 1997-06-17 CN CNB971971188A patent/CN1134792C/en not_active Expired - Fee Related
- 1997-06-17 CA CA002258506A patent/CA2258506A1/en not_active Abandoned
- 1997-06-17 AU AU32816/97A patent/AU3281697A/en not_active Abandoned
- 1997-06-28 TW TW090208966U patent/TW491411U/en not_active IP Right Cessation
-
2000
- 2000-09-20 US US09/665,670 patent/US6313728B1/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100372028C (en) * | 2003-10-24 | 2008-02-27 | 上海宏力半导体制造有限公司 | Semiconductor resistance element and producing method thereof |
| CN100388463C (en) * | 2005-01-27 | 2008-05-14 | 国际商业机器公司 | Method for manufacturing precision silicon-containing resistor |
| CN102110593A (en) * | 2010-12-15 | 2011-06-29 | 无锡中微晶园电子有限公司 | Method for improving stability of polysilicon thin-film resistor |
| CN103515195A (en) * | 2012-06-26 | 2014-01-15 | 台湾积体电路制造股份有限公司 | Substrate resistor and method of making same |
| CN103515195B (en) * | 2012-06-26 | 2016-08-31 | 台湾积体电路制造股份有限公司 | Substrate resistors and manufacture method thereof |
| CN104517811A (en) * | 2013-10-08 | 2015-04-15 | 英飞凌科技股份有限公司 | Methods for producing polysilicon resistors |
| US9634081B2 (en) | 2013-10-08 | 2017-04-25 | Infineon Technologies Ag | Methods for producing polysilicon resistors |
| CN112707366A (en) * | 2020-12-29 | 2021-04-27 | 无锡中微晶园电子有限公司 | High-precision polycrystalline low-resistance process manufacturing technology |
Also Published As
| Publication number | Publication date |
|---|---|
| DE69734456D1 (en) | 2005-12-01 |
| CA2258506A1 (en) | 1997-12-24 |
| EP0932907A1 (en) | 1999-08-04 |
| US6140910A (en) | 2000-10-31 |
| SE511816C2 (en) | 1999-11-29 |
| DE69734456T2 (en) | 2006-07-06 |
| EP0932907B1 (en) | 2005-10-26 |
| SE511816C3 (en) | 2000-01-24 |
| WO1997049103A1 (en) | 1997-12-24 |
| SE9602395D0 (en) | 1996-06-17 |
| TW491411U (en) | 2002-06-11 |
| JP2000512807A (en) | 2000-09-26 |
| KR20000016756A (en) | 2000-03-25 |
| CN1134792C (en) | 2004-01-14 |
| KR100363667B1 (en) | 2003-05-12 |
| US6313728B1 (en) | 2001-11-06 |
| AU3281697A (en) | 1998-01-07 |
| SE9602395L (en) | 1997-12-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1134792C (en) | A stablilized polysilicon resistor and a method for manufacturing it | |
| JP2633536B2 (en) | Method for manufacturing junction type semiconductor substrate | |
| KR910000019B1 (en) | A method of fabricating poly crystalline silicon resistor | |
| US4212100A (en) | Stable N-channel MOS structure | |
| US5691226A (en) | Method of manufacturing BICMOS integrated circuits | |
| JPS6122455B2 (en) | ||
| EP0239217B1 (en) | Method of forming doped wells in integrated circuits and its use in the production of a bipolar transistor in such circuits | |
| EP0219243A2 (en) | Process of manufacturing a bipolar transistor | |
| US6297120B1 (en) | Method of manufacturing a semiconductor device | |
| JPH01169925A (en) | Manufacture of semiconductor device | |
| JP2841419B2 (en) | Polycrystalline diode and method of manufacturing the same | |
| JPH0368134A (en) | Manufacture of semiconductor device | |
| JP2929630B2 (en) | Method for manufacturing semiconductor device | |
| JPH0571131B2 (en) | ||
| KR19980071210A (en) | Manufacturing method of semiconductor device having low resistance junction electrode | |
| JPH0563228A (en) | Manufacture of phototransistor | |
| JPS5954222A (en) | Manufacture of semiconductor device | |
| JPS6181666A (en) | Integrated circuit construction and manufacture thereof | |
| JPS63144567A (en) | Manufacture of semiconductor device | |
| JPH07118472B2 (en) | Method for manufacturing semiconductor device | |
| Lin et al. | Enhancing circuit design flexibility with argon implanted polysilicon resistor | |
| JPS59200416A (en) | Manufacture of semiconductor device | |
| JPS61206219A (en) | Manufacture of semiconductor device | |
| JPS6395619A (en) | Manufacture of semiconductor device | |
| JPS63292663A (en) | Manufacture of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: INFINEON TECHNOLOGIES AG Free format text: FORMER OWNER: ELLISON TELEPHONE CO., LTD. Effective date: 20040827 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20040827 Address after: Munich, Germany Patentee after: Infennian Technologies AG Address before: Stockholm Patentee before: Ericsson Telephone AB |
|
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1021065 Country of ref document: HK |
|
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |