CN1226681A - Improved piezoelectric accelerator of 450C degrees - Google Patents
Improved piezoelectric accelerator of 450C degrees Download PDFInfo
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- CN1226681A CN1226681A CN 99113406 CN99113406A CN1226681A CN 1226681 A CN1226681 A CN 1226681A CN 99113406 CN99113406 CN 99113406 CN 99113406 A CN99113406 A CN 99113406A CN 1226681 A CN1226681 A CN 1226681A
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Abstract
An improved high-temp (450 deg.C) piezoelectric accelerometer features that a combined insulating sleeve tube for preventing mass block from being in contact with base and prefastening screw and a thermal stress washer for releasing the thermal stress generated by mass block in time are additionally used on ordinary high-temp accelerometer, its piezoelectric ceramic element is a laminated Bi-ceramic comosition with complex displacement and empty position. The mass block is made up PbWO4 with high thermal insulation, instead of high-specific-weight alloy.
Description
The present invention relates to 450 ℃ of high-temperature piezoelectric accelerometers of a kind of modified, belong to the high temperature oscillation sensor field.
Vibration is modern various engineering, as the important parameter in the various structural designs of guided missile, aircraft, boats and ships, automobile, bridge and even dykes and dams and dam buildings.With the guided missile is example, show according to U.S. statistics in the sixties, and the destruction of Chu Xianing awing, wherein half is because the reason of vibrating causes.Therefore countries in the world are extremely paid close attention to the vibrational structure parameter, design and made various types of vibration-measuring sensors, in order to determine the equivalent load of dynamic environment.
In various types of vibration-measuring sensors, piezoelectric accelerometer because of it has that size is little, in light weight, wide frequency range (3～20, advantage and be subjected to widespread use such as 000Hz).Accelerometer always is in the working environment of harshness (light, temperature, noise, strain), actual utilization structure is all complicated, on material is selected, should also be noted that the pyroelectric effect of material except that considering piezoelectric modulus size and stability, this is because sensing element-ferroelectric material permanently-polarised intensity of using as piezoelectric accelerometer changes with temperature.Working method not simultaneously, the charge signal that same material produces under uniform temp changes is different.No matter be general compression-type, single-ended compression-type, isolate compression and upside-down mounting center compression-type and shearing-type accelerometer, the stability that all should be taken into account the piezoelectric sensor environment temperature is with degree of accuracy that guarantees vibration and the usable range of widening piezoelectric accelerometer.In the compression-type piezoelectric accelerometer structure of well-known center, the high-temperature piezoelectric ceramic component directly with sensor base with hold out against screw and contact, the temperature of base directly passes on the high temperature sensitive element, cause the working temperature of high-temperature piezoelectric ceramic component to influence with pedestal, thereby measuring accuracy is affected, causes the serviceability temperature scope of piezo ceramic element to narrow down.Fig. 1 is general high-temperature piezoelectric arrangements of accelerometers figure, 1-sensor base among the figure; 2-electroceramics element; 3-draws electric sheet; The 4-mass; 5-pretension screw; The 6-housing; 7-exports connector.Can be clear that sensor base 1 and hold out against screw 5 and directly contact from figure with piezoelectric sensor.Secondly, from formula S=Q/a=d
33Among the m as seen, the output sensitivity S of accelerometer and piezoelectric constant d
33Be directly proportional with the quality m of mass, when at high temperature working, the temperature that the accelerometer base is experienced is delivered on the mass by piezoelectric ceramics, the piezoelectric constant d of piezoelectric ceramics
33Can change along with the rising of temperature, and mass also can be because of producing thermal expansion, because mass is to be pressed on the piezoelectric ceramics, so the thermal expansion of mass also can have influence on piezoelectric ceramics, thereby the output that has aggravated the high-temperature piezoelectric accelerometer changes, and influences measuring accuracy.This shows that the use measuring accuracy that influences piezoelectric accelerometer mainly is that piezo ceramic element is subjected to the influence because of thermal expansion of the temperature effect of base and mass, desire improves measuring accuracy, just must make the influence of this respect be reduced to bottom line.
The self character that influences the piezoelectric accelerometer serviceability temperature and then be piezo ceramic element determines.How aspect the material selection, can make Curie temperature be higher than 850 ℃, and d
33Surpass 15PC/N simultaneously, make the simultaneously big what 5000 of quality factor, if can find this class material, the serviceability temperature of high-temperature piezoelectric accelerometer is improved greatly, this just derives inventive concept of the present invention.
People are known, and during bismuth was ceramic layered, molecular formula was PbBi
4Ti
4O
15And CaBi
4Ti
4O
15Ceramic composition demonstrates higher Curie point (being respectively 570 ℃ and 790 ℃) and good piezoelectricity, has proposed to replace as lead titanates the piezoceramic material of usefulness.
Calcium-bismuth-titanium system is the piezoceramic material of an eka-bismuth layered-type compound, and it is formed general formula and can be write as: (Bi
2O
2)
2+(A
M-1B
mO
3m+1)
2-, wherein A be suitable for 12 coordinations one, two, three, quadrivalent cation or theirs is compound; B be suitable for octahedral coordination three, four, five, sexavalence kation or theirs is compound; M is a positive integer, the number of plies of expression bismuth stratiform, and its value is 1-5.L.KORZUNOVA passes through at CaBi
4Ti
4O
15Middle 7～the 10wt%BiWO that adds
6And 0.2wt%Cr
2O
3Sintering temperature is reduced, make d
33From 4.4 * 10
-12Bring up to (10～14) * 10
-12, and the further raising of heating and cooling stability, but regrettably this constituent is being stable below 700 ℃ only, and desire using him to advise adopting Bi more than 800 ℃
3TiNbO
9The systematization compound; SU1458356A and for example, the inventor is at CaBi
4Ti
4O
15Also add BiWO in the system
6And Cr
2O
3(concrete component sees Table 1) can make Curie temperature bring up to 865 even 875, the highest d
33Reach 16.1, but corresponding quality factor is very low, has only 3817.As can be seen from Table 1, Ca-Bi-Ti system up to now, Tc has improved and has surpassed 850 ℃ after modification, but d
33Between 14～16, and d
33Qm is lower than 4000 after surpassing 15.So still have unsatisfactory part.How further to improve the performance of Ca-Bi-Ti based material, become the target that this area scientific research personnel lays siege to.Table 1 has been reported the rerum natura of stupalith
| Numbering | Constituent | Performance | Data Source | ||||
| Tc (℃) | d 33(PC/N) | ε 33T/ε 0 | tanδ (％) | Qm | |||
| ????1 | ????PbBi 4Ti 4O 15 | 790 | ?4.4 | ?130 | ?LANDOLT-BORNSTEIN ????Vol.16,P.239 | ||
| ????2 | ????PbBi 4Ti 4O 15Add Cr 2O 3????0.2wt％ ????Bi 2WO 6?7～10wt％ | ＜700 | ?10～ ?14 | ????L.KORZUNOVA ?Ferroelectrics,Vol.134, ????P.175～180(1992) | |||
| ????3 | CaBi 4Ti 4O 15?98.27wt％ Bi 2WO 6???????1.72wt％ Cr 2O 3?????????0.01w％ | 865 | ?14.0 | ?121 | 0.23 | 5230 | HOBHKOBA waits Su 1458356 A1 |
| ????4 | CaBi 4Ti 4O 15?97.62wt％ Bi 2WO 6???????2.18wt％ Cr 2O 3????????0.20wt％ | 865 | ?16.1 | ?118 | 0.37 | 3817 | The same |
| ????5 | CaBi 4Ti 4O 15?98.24wt％ Bi 2WO 6???????1.71wt％ Cr 2O 3????????0.05wt％ | 865 | ?14.2 | ?120 | 0.24 | 4013 | The same |
Purpose of the present invention provides a kind of modified 450 ℃ of high-temperature piezoelectric accelerometers at what, and it improves mainly in the following areas:
(1) assembled casing of a special construction of increase is placed in sensor base with it
On, make high temp. sensitive do not have part directly with base with hold out against screw and contact, can exempt from
Be subjected to from the accelerometer base and hold out against directly influencing of screw temperature variation, from
And the serviceability temperature scope and the accuracy of detection of accelerometer have been improved.
(2) increase a thermal stress packing ring, it is placed on mass and holds out against between the screw,
Can make the thermal stress that mass produces under hot conditions be able to timely release, from
And the serviceability temperature and the accuracy of detection of raising piezoelectric accelerometer.
(3), insulation little with thermal expansivity, the lead tungstate pottery that heat-proof quality is good are material
The mass of making replaces tungsten-copper alloy (common name high-density alloy) material system
The mass that becomes, improving under hot conditions, the high-temperature piezoelectric accelerometer
Serviceability temperature scope and precision.
(4) critical improvement is partly to replace to replace through compound ion with a class to form omission
The ceramic layered composition of bismuth, as piezo ceramic element (sensing element).
Make it on existing other people working foundation, when Curie temperature improves, to make material
Body resistivity further improves under the piezoelectric property of material and the high temperature.
Below in conjunction with the drawing explanation in detail, substantial characteristics of the present invention and obvious improvement are described in detail.Fig. 2 is the structural representation of 450 ℃ of high-temperature piezoelectric accelerometers after improving.1-7 is identical with Fig. 1 among the figure.8 is assembled casing among the figure, and 9 is the thermal stress packing ring.
(1) heat insulation assembled casing 8 is placed on the sensor base 1, make high temp. sensitive do not have part directly with base with hold out against screw and contact.The concrete proterties 8 of heat insulation assembled casing is shown in Fig. 3-1, and practical structures is to be made of up and down two pads 10 and a sleeve pipe 11, shown in Fig. 3-2.10 is pad among the figure, parallel and the flatness of both ends of the surface is＜0.03mm gets final product, 11 is sleeve pipe, there is hole, a garden in pad 10 central authorities, its size just in time is complementary with the external diameter of sleeve pipe 11, and the wall thickness of sleeve pipe 11 is generally 0.4～2mm, and endoporus central authorities allow to hold out against screw 2 and pass through, its internal diameter matches with holding out against screw 2 diameters, and the gap is 0.05-0.1 mm.Assembled casing 8 (Fig. 3-1) is to be combined by up and down two pads 10 and a sleeve pipe 11, and the thickness of pad 10 is generally 0.5～2mm, and diameter is suitable with the piezoelectric element diameter.The endoporus central authorities of sleeve pipe 11 hold out against screw 2, and in both gap allowed bands, the gap is 0.05～0.5mm scope between outside surface and the piezoelectric ceramic piece.Pad 10 and sleeve pipe 11 are made by the low heatproof pottery of coefficient of heat conductivity, as various components (75 porcelain, 85 porcelain, 90 porcelain, 95 porcelain, 99 porcelain) aluminium oxide, mullite, silicon nitride and clay material; The value of wall thickness is relevant with the thermal conductivity coefficient of making material, and wall thickness can be corresponding little when the material that coefficient of heat conductivity is low was made, otherwise wall thickness is bigger.Last lower gasket contacts with sensor base 5 with mass 3 respectively, combines with metal adhesive with general commercially available pottery between them.
(2) the thermal stress packing ring 9, it is placed on mass 4 and holds out against between the screw 5, can make the thermal stress that mass produces under hot conditions be able to timely release, thereby improve the serviceability temperature and the accuracy of detection of piezoelectric accelerometer.Thermal stress packing ring 9 is simple ring-type, it is by exotic material, as GH600, GH169 etc. make, and its external diameter is equal to or less than the external diameter of mass 3, middle diameter of bore is Φ 3-Φ 5, being complementary with the major diameter of thread with pretension screw 2 is as the criterion, and the wall thickness between endoporus and the external diameter is 0.5-2mm, and thickness range is 0.5-2mm, the nonparallelism of both ends of the surface is less than 0.05mm about the thermal stress packing ring, and surfaceness exists
More than, thermal stress circle 9 is placed between pretension screw 2 and the mass 3 as shown in Figure 4, and the nonparallelism of ring and surfaceness will guarantee technical requirement, to guarantee the top and bottom contact of ring, are subjected to thermogenetic thermal stress to be able to timely release to guarantee mass 3.
(3) lead tungstate (PbWO that mass 4 is, insulation little with thermal expansivity, heat-proof quality is good
4) stupalith makes.Its external diameter is Φ 10～Φ 20mm, and internal diameter is Φ 3～Φ 5mm, and thickness range is 4～10mm.Because the proportion of lead tungstate pottery is 8.22, only is tungsten-copper alloy proportion (16～17) g/cm of our common usefulness
3About 50%, be that the volume of the novel mass made of material guarantees that the output sensitivity of accelerometer is constant so contain the ceramic layered sheet number of vacant bismuth and increase with the lead tungstate pottery in the compound displacement of this available increase.
(4) adopt improved piezo ceramic element.At CaBi during m=4 in the Ca-Bi-Ti system
4Ti
4O
15Bismuth laminated piezoelectric ceramic is by A position Ca
2+Partly replace replacement by compound ion, compound substitution ion is (Na
+, Ce
3+) or (K
+, Ce
3+) or (Li
+, Ce
3+), and have a mind to form monovalence M
+The ion room, it forms general formula is (Bi
2O
2)
2+[Ca
xM
(1-x)/2-y yCe
(1-x)/2Bi
2Ti
4O
13]
2-(0.8＜x in the formula＜1.0,
yBe M
+Ion vacancy, 0.00＜y＜0.05).Work as y=0, that is form when vacant, then (M
+, Ce
3+) the compound displacement general formula of part is Ca
xM
(1-x)/2Ce
(1-x)/2Bi
4Ti
4O
15(M
+Be the monoacidic base metallic ion, as: Na
+, K
+, Li
+).
As (Na
+, Ce
3+) compound replacement and forming when vacant, its composition general formula is:
(Bi
2O
2)
2+[Ca
xNa
[(1-x)/2]-y yCe
(1-x)/2Bi
2Ti
4O
13]
2-
0.8＜x in the formula＜1.0,0＜y＜0.05;
As (Li
+, Ce
3+) compound replacement and forming when vacant, its composition general formula is:
(Bi
2O
2)
2+[Ca
xLi
[(1-x)/2]-y yCe
(1-x)/2Bi
2Ti
4O
13]
2-
0.8＜x in the formula＜1.0,0＜y＜0.05;
As (K
+, Ce
3+) compound replacement and forming when vacant, its composition general formula is:
(Bi
2O
2)
2+[Ca
xK
[(1-x)/2]-y yCe
(1-x)/2Bi
2Ti
4O
13]
2-
0.8＜x in the formula＜1.0,0＜y＜0.05;
Through compound replacement and vacant Ca-Bi-Ti is arranged is the ceramic layered constituent of bismuth, adopt general piezoelectric ceramics to prepare industry and be prepared, in order to make CeO
2Ce in the raw material
4+Be converted into Ce
3+, adopted pre-synthesis technique.This shows, provided by the invention through 450 ℃ of high-temperature piezoelectric accelerometers of modified, can guarantee serviceability temperature scope and measuring accuracy under 450 ℃ of high temperature.This be because:
(1) effect of assembled casing is: it is placed on the sensor base, make high temp. sensitive do not have part directly with base with hold out against screw and contact, can avoid from the accelerometer base and hold out against the direct influence of screw temperature variation;
(2) effect of thermal stress packing ring is: it is placed on mass and holds out against between the screw, can make the thermal stress that mass produces under hot conditions be able to timely release.
(3) the high T that contains omission of compound displacement
C, high d
33With the effect of the general piezoelectric ceramics of the ceramic layered replacement of the bismuth of Qm is to improve detected temperatures scope and detection sensitivity.
(4) with low-expansion coefficient, lead tungstate (PbWO that heat-proof quality is good
4) mass made of material, substitute the mass that high specific gravity alloy material commonly used is made, although density is low, the volume that can be by increasing mass and the sheet number of piezo ceramic element reach same sensitivity.Piezo ceramic element is influenced by heat reduces to bottom line.
Above-mentioned 4 characteristics that also embody difference what prior art of the present invention.Further specify substantive distinguishing features of the present invention and obvious improvement below in conjunction with implementing, but be in no way limited to the present invention.
Embodiment 1.The present invention has increased heat insulation assembled casing 8 and thermal stress packing ring 9 (as shown in Figure 2) on the structure of former general high-temperature piezoelectric accelerometer.And the composition of mass and piezo ceramic element improved.Heat insulation assembled casing 8 is placed on seal shadow position shown in Figure 2, piezo ceramic element 2 is not directly contacted with pretension screw 5 with sensor base 1, pad 10 and sleeve pipe 11 (Fig. 3-1) are made by 90 alumina materials, the thickness of pad 10 is 1mm, casing wall thickness is 0.5mm, tolerance is a free tolerance, the combined sleeve lower cushion block contacts with sensor base 1, last cushion block contacts with mass 4, combine with metal adhesive with general commercially available pottery between them, the hole that leaves between sleeve 11 outside surfaces and piezo ceramic element is 0.3mm, the hole 0.08mm between inwall and the pretension screw 5.Thermal stress ring spacer, its endoporus are Φ 4.5mm (being complementary with the major diameter of thread of pretension screw 5), and thickness is 1.5mm, and the wall thickness between endoporus and the external diameter is 0.8mm, and the nonparallelism of both ends of the surface is 0.025mm, and surfaceness is
Timely release mass 4 is played because of being subjected to thermogenetic thermal stress in 9 positions of its riding position such as Fig. 2; Mass 4 is by lead tungstate (PbWO
4) stupalith makes.Its external diameter is Φ 15mm, and internal diameter is Φ 4mm, and thickness range is 5mm; Piezo ceramic element 2 is through (Na
+, Ce
3+) to contain vacant Ca-Bi-Ti bismuth ceramic layered in compound displacement, the concrete composition formula when x=0.90 y=0.01 is:
Ca
0.9Na
0.04 0.01Ce
0.05Bi
4Ti
4O
15(1150 ℃ of sintering) its Tc is 866 ℃, d
33Be 20.0PC/N, Qm is 5440.
High-temperature piezoelectric accelerometer after above-mentioned four aspects are improved can be stably 450 ℃ of precision of using and can guaranteeing to measure.
Embodiment 2.Assembled casing 8 is to be made by the heat-stable ceramic mullite, and all the other are with embodiment 1.
Embodiment 3.Thermal stress ring spacer, its endoporus are Φ 3, and thickness is 1mm, and the wall thickness between endoporus and the external diameter is 2mm, and the nonparallelism of both ends of the surface is 0.03mm, and all the other are with embodiment 1.
By embodiment as can be known, best composition is: x=0.90y=0.10 is by (Na
+, Ce
3+) component compound replacement and that form omission, and (Li
+Ce
3+) the Li omission of compound replacement and formation is the most remarkable to improving Tc.Table 2 forms Na
+Vacant component and performance gather
Table 3 (M
+, Ce
3+) compound ion partly replaces and replace composition and performance and gather
| The embodiment numbering | Form Ca xNa (1-x)/2-y yCe (1-x)/2Bi 4Ti 4O 15 | Performance | Sintering condition (℃) | |||||||
| ????x | ????y | ?Tc (℃) | d 33(PC/N) | ε 33T/ε 0 | ?tanδ ?(％) | Qm | ?Kt | Kp | ||
| ?1 | ????0.90 | ????0.010 | ?866 | ?20.0 | ?134 | ?0.11 | 5440 | ?0.29 | 0.052 | ?1150 |
| ?4 | ????0.90 | ????0.005 | ?812 | ?18.5 | ?133 | ?0.12 | ?1130 | |||
| ?5 | ????0.90 | ????0.015 | ?772 | ?17.0 | ?130 | ?0.12 | ?1170 | |||
| ?6 | ????0.90 | ????0.020 | ?770 | ?16.0 | ?130 | ?0.18 | ?1170 | |||
| The embodiment numbering | Form | Performance | Sintering condition (℃) | |||||
| ?Tc (℃) | d 33(PC/N) | ε 33T/ε 0 | (％) tanδ | ??Kt | ?Kp | |||
| ????7 | Ca 0.92Na 0.04Ce 0.04Bi 4Ti 4O 15 | ?790 | ?17.0 | ?140 | ?0.20 | ??0.25 | ?0.054 | ?1100 |
| ????8 | Ca 0.92Li 0.04Ce 0.04Bi 4Ti 4O 15 | ?800 | ?18.0 | ?129 | ?0.30 | ??0.31 | ?0.06 | ?1100 |
| ????9 | Ca 0.92K 0.04Ce 0.04Bi 4Ti 4O 15 | ?787 | ?17 | ?135 | ?0.18 | ?0.05 | ?1100 | |
| ???10 | Ca 0.90Li 0.045 0.005Ce 0.05Bi 4Ti 4O 15 | ?890 | ?18 | ?134 | ?0.22 | ?1115 | ||
| ???11 | Ca 0.90K 0.035 0.015Ce 0.05Bi 4Ti 4O 15 | ?860 | ?17 | ?138 | ?0.21 | ?1120 | ||
Claims (10)
- Follow-on 450 ℃ of high-temperature piezoelectric accelerometers use by sensor base (1), piezoelectric ceramics do not have part (2), draw electric sheet (3), mass (4), pretension screw (5), housing (6) and output connector (7) constitute, it is characterized in that:(1). (a) heat insulation assembled casing (8) is by two pads (10) and sleeve pipe (11) combine up and down;(b) heat insulation assembled casing is placed in above the sensor base (1), Upper gasket contacts with mass (3), lower gasket contacts with sensor base (1), and sleeve pipe (8) endoporus central authorities allow pretension screw (5) to pass through, and the gap is 0.05-0.5mm between outside surface and the piezo ceramic element (2);(c) combine with metal adhesive with general commercially available pottery between pad (10) and mass (4) and the base (1);(2). (a) thermal stress packing ring (9) is placed between pretension screw (5) and the mass (4);(b) thermal stress packing ring (9) is a ring, and an end face of ring contacts with the nut face of pretension screw, and another side contacts with the face of mass (4);(3). (a) mass is by lead tungstate (PbWO 4) stupalith makes;(b) mass (4) is placed in above the piezoelectric ceramic piece (2), and its endoporus central authorities allow the screw on the piezoelectric accelerometer base by pretension screw (5) it to be compressed;(4). (a) used piezoelectric ceramic piece is with (M +, Ce 3+) compound ion partly replaces and replace CaBi 4Ti 4O 15A position Ca in the pottery 2+Ion, M +Be the monoacidic base metallic ion, the composition general formula is:Ca xM (1-x)/2Ce (1-x)/2Bi 4Ti 4O 15????(0.8＜x＜1.0)；????????(1)(b) partly replace on the basis of replacement at compound ion, form the monovalent ion room again, its composition general formula is:(Bi 2O 2) 2+[Ca xM [(1-x)/2]-y yCe (1-x)/2Bi 2Ti 4O 13] 2-????(2)In the formula: 0.8＜x＜1.0,0＜y＜0.05;
- 2. by 450 ℃ of high-temperature piezoelectric accelerometers of the described modified of claim 1, it is characterized in that described pad (10) and sleeve pipe (11) by heat-stable ceramic, make as various components (75 porcelain, 85 porcelain, 90 porcelain, 95 porcelain, 99 porcelain) aluminium oxide, mullite, silicon nitride and clay material.
- 3. by 450 ℃ of high-temperature piezoelectric accelerometers of the described modified of claim 1, it is characterized in that:(1) described pad (10) diameter is suitable with the piezoelectric sensor diameter, and thickness is 0.5～2mm, reduces with the pyroconductivity of making heat-stable ceramic to reduce; (2) wall thickness of described sleeve pipe (11), also the pyroconductivity with the heat-stable ceramic that uses reduces and attenuate, and the scope of wall thickness is 0.4～2mm.
- 4. by 450 ℃ of high-temperature piezoelectric accelerometers of the described modified of claim 1, the thickness that it is characterized in that described thermal stress packing ring (9) is 0.5-2mm, Circularhole diameter is Φ 3-Φ 5mm in the middle of it, being complementary with the major diameter of thread with pretension screw (5) is as the criterion, and its external diameter is equal to or less than the diameter of mass (4).
- 5. by claim 1,450 ℃ of high-temperature piezoelectric accelerometers of 4 described modifieds, the both ends of the surface nonparallelism is less than 0.05mm up and down to it is characterized in that described thermal stress packing ring (9), and the surfaceness requirement is
- 6. by claim 1,450 ℃ of high-temperature piezoelectric accelerometers of 4 described modifieds, it is characterized in that thermal stress packing ring (9) by the high-temperature alloy material, makes as GH600 or GH169.
- 7. by 450 ℃ of high-temperature piezoelectric accelerometers of the described modified of claim 1, what it is characterized in that described mass (4) is that external diameter is Φ 10～Φ 20mm, and internal diameter is Φ 3～Φ 5mm, and thickness range is 4～10mm;
- 8. by 450 ℃ of high-temperature piezoelectric accelerometers of the described modified of claim 1, it is characterized in that piezo ceramic element contains the vacant ceramic layered composition of bismuth through compound displacement and formation, monovalent metallic ion can be Li, Na, K.(1) as (Na +, Ce 3+) compound replacement, its composition general formula is:Ca xNa (1-x)/2Ce (1-x)/2Bi 4Ti 4O 15With(Bi 2O 2) 2+[Ca xNa [(1-x)/2]-y yCe (1-x)/2Bi 2Ti 4O 13] 2-?????????(3)0.8＜x in the formula＜1.0,0＜y＜0.05;(2) as (Li +, Ce 3+) compound replacement, its composition general formula is:Ca xLi (1-x)/2Ce (1-x)/2Bi 4Ti 4O 15With(Bi 2O 2) 2+[Ca xLi [(1-x)/2]-y yCe (1-x)/2Bi 2Ti 4O 13] 2-????(4)0.8＜x in the formula＜1.0,0＜y＜0.05;(3) as (K +, Ce 3+) compound replacement, its composition general formula is:Ca xK (1-x)/2Ce (1-x)/2Bi 4Ti 4O 15With(Bi 2O 2) 2+[Ca xK [(1-x)/2]-y yCe (1-x)/2Bi 2Ti 4O 13] 2-????(5)0.8＜x in the formula＜1.0,0＜y＜0.05;
- 9. by claim 1,450 ℃ of high-temperature piezoelectric accelerometers of 8 described modifieds, it is characterized in that piezo ceramic element is through compound displacement and contain the vacant ceramic layered composition of bismuth, (Na +, Ce 3+) during compound replacement, form Na +Best group becomes x=0.90 during the room, y=0.01;
- 10. by claim 1,450 ℃ of high-temperature piezoelectric accelerometers of 8 described modifieds, it is characterized in that piezo ceramic element is through compound displacement and contain the vacant ceramic layered composition of bismuth, (Li +, Ce 3+) compound replacement and formation Li +Vacant the most remarkable to improving Tc.
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|---|---|---|---|
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|---|---|---|---|
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100523766C (en) * | 2005-10-27 | 2009-08-05 | 中国科学院上海硅酸盐研究所 | Output joint of differentiated piezoelectric acceleraometer of resisting moderate and high temperature |
| CN108267615A (en) * | 2017-12-18 | 2018-07-10 | 北京遥测技术研究所 | A kind of HI high impact piezoelectric accelerometer |
| CN108291926A (en) * | 2015-12-04 | 2018-07-17 | 基斯特勒控股公司 | Accelerograph and the method for manufacturing this accelerograph |
| CN108369244A (en) * | 2015-12-04 | 2018-08-03 | 基斯特勒控股公司 | Accelerograph and method for manufacturing this accelerograph |
-
1999
- 1999-01-08 CN CN 99113406 patent/CN1109248C/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100523766C (en) * | 2005-10-27 | 2009-08-05 | 中国科学院上海硅酸盐研究所 | Output joint of differentiated piezoelectric acceleraometer of resisting moderate and high temperature |
| CN108291926A (en) * | 2015-12-04 | 2018-07-17 | 基斯特勒控股公司 | Accelerograph and the method for manufacturing this accelerograph |
| CN108369244A (en) * | 2015-12-04 | 2018-08-03 | 基斯特勒控股公司 | Accelerograph and method for manufacturing this accelerograph |
| CN108369244B (en) * | 2015-12-04 | 2020-08-07 | 基斯特勒控股公司 | Acceleration measuring device and method for producing such an acceleration measuring device |
| CN108291926B (en) * | 2015-12-04 | 2020-08-07 | 基斯特勒控股公司 | Acceleration measuring device and method for producing such an acceleration measuring device |
| CN108267615A (en) * | 2017-12-18 | 2018-07-10 | 北京遥测技术研究所 | A kind of HI high impact piezoelectric accelerometer |
| CN108267615B (en) * | 2017-12-18 | 2021-02-09 | 北京遥测技术研究所 | High-impact piezoelectric accelerometer |
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| CN1109248C (en) | 2003-05-21 |
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