CN1225678C - Optical approaching correcting method - Google Patents
Optical approaching correcting method Download PDFInfo
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- CN1225678C CN1225678C CNB021269963A CN02126996A CN1225678C CN 1225678 C CN1225678 C CN 1225678C CN B021269963 A CNB021269963 A CN B021269963A CN 02126996 A CN02126996 A CN 02126996A CN 1225678 C CN1225678 C CN 1225678C
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- pattern
- dummy pattern
- circuit layout
- light shield
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Abstract
The present invention relates to a method of an optical proximity correction (OPC). The method provides a scheduled circuit pattern firstly; then, the circuit pattern is formed on a light shield, a plurality of nonprintable dummy patterns are formed on the part of the light shield, which is not covered with the circuit pattern; the nonprintable dummy patterns are used for improving density variations of the patterns on the light shield in order to correct an optical proximity effect, and the nonprintable dummy patterns can not be transferred to a light resistance layer which is arranged on the surface of a semiconductor chip along with a microimage manufacturing process.
Description
Technical field
The present invention provides a kind of optical approaching correcting method, refers to that especially a kind of dummy pattern of utilizing is to reduce the optical approaching correcting method of pattern density difference.
Background technology
On manufacture of semiconductor, in order successfully to transfer to the pattern of integrated circuit (integrated circuits) on the semi-conductor chip, must be earlier this circuit pattern design be formed a mask pattern, after again this mask pattern is transferred on this semi-conductor chip from the light shield surface in certain proportion.
Yet along with the pattern of integrated circuit is designed to be more and more littler, and the influence that is exposed the resolution limit (resolution limit) of board (optical exposure tool), carry out exposure manufacture process when carrying out design transfer in the mask pattern that these high density are arranged, just be easy to produce the optics closing effect (optical proximity effect, OPE).For example right-angled corner rounding (right-angled corner rounded), straight line terminal deflation (line endshortened) and the increase/reduction of straight line live width (line width increase/decrease) etc. all are that the mask pattern that common optics closing effect is caused shifts defective.U.S. Pat 6,042,973 and U.S. Pat 6,077, the 630 a plurality of integrated circuit patterns edges that are exposed in a light shield surface form the inferior parsing fence (subresolutiongrating) of a sub-circular respectively, therefore when respectively this circuit pattern was transferred to a chip surface, respectively the resolution at this circuit pattern edge can improve, yet this time parsing fence also can't avoid taking place when respectively this circuit pattern shifts the optics closing effect.Therefore, cause the mask pattern transfer distortions for fear of above-mentioned optics closing effect, and can't correctly be transferred to circuit pattern on the semi-conductor chip, existing manufacture of semiconductor all is to utilize a computer system to come this circuit pattern is carried out an optics near revising (optical proximity correction earlier, OPC), eliminating the optics closing effect, and then make a mask pattern, be formed on the light shield according to corrected circuit pattern.
Please refer to Fig. 1 to Fig. 4, Fig. 1 to Fig. 4 is the synoptic diagram of a known optical approaching correcting method.As shown in Figure 1, an ifq circuit pattern 10 includes a plurality of and is used for the linear pattern 12 of definition character line.The phenomenon of the terminal deflation of straight line and increase of straight line live width or reduction takes place when the optics closing effect causes line style pattern 12 to shift, and therefore must utilize a computer system to come circuit pattern 10 is carried out an optics near correction earlier.As shown in Figure 2, mask pattern 14 circuit pattern 10 that is Fig. 1 carries out a known optics near correction result.In the same manner, as shown in Figure 3, an ifq circuit pattern 16 includes a plurality of rectangular patterns 18 that are used for defining doped region.The phenomenon of right-angled corner rounding when causing rectangular patterns 18 to shift, the optics closing effect takes place, therefore also must utilize a computer system to come circuit pattern 16 is carried out an optics near revising earlier, as shown in Figure 4, mask pattern 20 circuit pattern 16 that is Fig. 3 carries out a known optics near correction result.
Because known optical approaching correcting method only comes the integrated circuit pattern is revised near modification model (OPCmodel) by an optics, do not consider the exposure bias that the pattern density inequality of the regional area of light shield is caused.In addition, along with semiconductor integrated assembly (system on chip, SOC) development of trend, many different types of semiconductor subassemblies (for example: internal memory, logical circuit, I/O, central microprocessor or the like) often are integrated and are formed on the same chip, significantly to reduce cost and to improve processing speed, so the circuit pattern density of this chip regional area has sizable difference, therefore known optical approaching correcting method is also inapplicable.
Summary of the invention
Therefore fundamental purpose of the present invention is promptly in that a kind of optical approaching correcting method is provided, to address the above problem.
In most preferred embodiment of the present invention, one predetermined circuit pattern at first is provided, then on a light shield, form this circuit pattern, and this light shield surface beyond this circuit pattern forms the dummy pattern (nonprintable dummy pattern) of a plurality of printing opacities.The dummy pattern of these a plurality of printing opacities is to be used for improving pattern density difference on this light shield to revise the optics closing effect, can't be transferred to along with micro-photographing process in the photoresist layer of semiconductor chip surface, and this circuit layout pattern penetrate penetrating of light (transmitted light) and this dummy pattern has 180 ° between the light phase differential (phase difference).
Because optical approaching correcting method of the present invention is to be scheduled to be transferred to the dummy pattern that a suprabasil circuit pattern forms a plurality of not video pictures on every side in one, therefore can effectively improve the pattern density difference of this circuit pattern, to reach the purpose of revising the optics closing effect, this illusory image is to carry out a simple and easy computing according to an exposure manufacture process condition to form simultaneously, expends the plenty of time so can effectively avoid known optical approaching correcting method to carry out a complex mathematical computing.
Description of drawings
Fig. 1 to Fig. 4 is the synoptic diagram of a known optical approaching correcting method;
Fig. 5 to Fig. 6 is the synoptic diagram of the present invention's one optical approaching correcting method.
The figure number explanation:
10,16 circuit patterns, 12 line style patterns
14,20,32,42 mask pattern, 18 rectangular patterns
30,40 dummy pattern
Embodiment
Please refer to Fig. 5 and Fig. 6, the circuit pattern 10,16 that Fig. 5 and Fig. 6 are respectively Fig. 1 and Fig. 3 carries out the synoptic diagram of optical approaching correcting method of the present invention.As shown in Figure 5, method of the present invention is (to show being scheduled to be transferred to a substrate, semi-conductor chip for example) circuit pattern 10 on directly is formed at a light shield (not shown) surface, and this light shield surface beyond circuit pattern 10 forms a plurality of rectangle dummy pattern (dummy pattern) 30 in addition simultaneously, so circuit pattern 10 will constitute a mask pattern 32 jointly with dummy pattern 30.That is to say, the inventive method is with the predetermined circuit pattern 10 that is transferred to a substrate (not shown) of a desire, utilize a computer system to come circuit pattern 10 is carried out a corrective action earlier, form the dummy pattern 30 of a plurality of not video pictures with the blank parts beyond circuit pattern 10, and then the dummy pattern 30 of circuit pattern 10 and a plurality of not video pictures is made in light shield (not shown) surface together, and then reach the pattern density difference of improving circuit pattern 10 parts.Wherein dummy pattern 30 can only form and be surrounded on circuit pattern 10 (not shown) all around, or as shown in Figure 5, dummy pattern 30 can also form and intersperse among the white space beyond the circuit pattern 10.
Similarly, as shown in Figure 6, method of the present invention is that the predetermined circuit pattern 16 that is transferred on the substrate (not shown) directly is formed on the light shield (not shown), and form a plurality of rectangle dummy pattern (dummy pattern) 40 in addition in circuit pattern 16 this light shield surface in addition simultaneously, so circuit pattern 16 constitutes mask pattern 42 jointly with dummy pattern 40.
In addition, the inventive method also can utilize a computer system to come circuit pattern 10 and circuit pattern 16 are carried out traditional approaching correction of optics earlier, to avoid right-angled corner rounding (right-angled corner rounded), terminal (line end shortened) and the straight line live width increase/reduction design transfer defectives such as (line width increase/decrease) of tightening of straight line, and then form the dummy pattern of a plurality of not video pictures in the blank parts of revised circuit pattern, dummy pattern with revised circuit pattern and a plurality of not video pictures is made in light shield (not shown) surface together at last, to improve circuit pattern 10,16 pattern density difference.
Because the circuit pattern 10 of Fig. 5 and Fig. 6,16 can relend by a follow-up pattern transfer producing process as micro-photographing process (photolithographic process) etc., be transferred to the photoresist layer of this substrate surface with this light shield certainly, so in most preferred embodiment of the present invention, dummy pattern 30,40 size (dimension) and quantity are the exposure wavelengths (exposure wavelength) along with this micro-photographing process, the numerical value hole of focus lamp (numerical apertures) and this photoresist layer material and change, to reach the pattern density difference of improving circuit pattern office and the purpose of revising the optics closing effect, and dummy pattern 30 of the present invention, another significant design factor of 40 is a circuit layout pattern 10,16 penetrate light (transmitted light) and dummy pattern 30,40 penetrate has 180 ° phase differential (phase difference) between the light, so dummy pattern 30,40 can not be transferred to this photoresist layer along with this micro-photographing process.With Fig. 5 and Fig. 6 is example, the length of side of rectangle dummy pattern 30,40 is all the multiple of exposure wavelength, and this multiple is less than 0.6, and the distance between each dummy pattern 30,40 also is the multiple of this exposure wavelength, and the scope of this multiple is between 0.3 to 2.0, simultaneously, the minor increment between dummy pattern 30,40 and the circuit pattern 10,16 is 0.4 to 2.0 multiple of exposure wavelength.
Optical approaching correcting method of the present invention is to form the dummy pattern of a plurality of not video pictures on every side in a predetermined suprabasil circuit pattern that is transferred to, so improves the pattern density difference of this circuit pattern office, to reach the purpose of revising the optics closing effect.Compared to known optical approaching correcting method, illusory image of the present invention is to carry out a simple and easy computing according to an exposure manufacture process condition to form, and can avoid known optical approaching correcting method to carry out a complex mathematical computing and expends the plenty of time.
Claims (26)
1. optical approaching correcting method, the optics closing effect when being used for reducing pattern transfer producing process, this method includes the following step:
One light shield is provided;
Provide a preboarding to be formed in original mask pattern on this light shield, and include at least one circuit layout pattern and at least one white space in this original mask pattern;
In this white space, form a plurality of dummy pattern, revise mask pattern so that this circuit layout pattern, these a plurality of dummy pattern and remaining this white space constitute one; And
Form this in this light shield surface and revise mask pattern;
The phase differential that has 180 ° between the light that penetrates that penetrates light and this dummy pattern of this circuit layout pattern wherein.
2. method according to claim 1 is characterized in that: these a plurality of dummy pattern are the othernesses that are used for reducing the pattern density of this original mask pattern, to revise the optics closing effect of this original mask pattern when this design transfer.
3. method according to claim 1 is characterized in that: these a plurality of dummy pattern are to be surrounded on around this circuit layout pattern.
4. method according to claim 1 is characterized in that: these a plurality of dummy pattern are to intersperse among this white space.
5. method according to claim 1 is characterized in that: this circuit layout pattern can be transferred in the photoresist layer of a substrate surface along with this pattern transfer producing process.
6. method according to claim 5 is characterized in that: these a plurality of dummy pattern are a not video picture dummy pattern, can not be transferred in this photoresist layer along with this pattern transfer producing process.
7. method according to claim 6 is characterized in that: the size of this dummy pattern and quantity are the exposure wavelength along with this pattern transfer producing process, the numerical value hole of focus lamp, and this photoresist layer material and changing.
8. method according to claim 7 is characterized in that: respectively the length of side of this dummy pattern is all the multiple of this exposure wavelength, and this multiple is less than 0.6.
9. method according to claim 7 is characterized in that: respectively the distance between this dummy pattern is the multiple of this exposure wavelength, and the scope of this multiple is between 0.3 to 2.0.
10. method according to claim 7 is characterized in that: respectively the minor increment between this dummy pattern and this circuit layout pattern is the multiple of this exposure wavelength, and the scope of this multiple is between 0.4 to 2.0.
11. a method that forms mask pattern, this method includes the following step:
One light shield is provided; And
Form a circuit layout pattern in this light shield surface, and this light shield surface outside this circuit layout pattern forms a plurality of dummy pattern;
The phase differential that has 180 ° between the light that penetrates that penetrates light and this dummy pattern of this circuit layout pattern wherein.
12. method according to claim 11 is characterized in that: these a plurality of dummy pattern are the difference that is used for reducing the pattern density on this light shield surface, to revise the optics closing effect of this light shield when the pattern transfer producing process.
13. method according to claim 12 is characterized in that: this circuit layout pattern can be transferred in the photoresist layer of a substrate surface along with this pattern transfer producing process.
14. method according to claim 12 is characterized in that: these a plurality of dummy pattern are a not video picture dummy pattern, can not be transferred in this photoresist layer along with this pattern transfer producing process.
15. method according to claim 14 is characterized in that: the size of this dummy pattern and quantity are the exposure wavelength along with this pattern transfer producing process, the numerical value hole of focus lamp, and this photoresist layer material and changing.
16. method according to claim 15 is characterized in that: respectively this dummy pattern length of side is all the multiple of this exposure wavelength, and this multiple is less than 0.6.
17. method according to claim 15 is characterized in that: respectively the distance between this dummy pattern is the multiple of this exposure wavelength, and the scope of this multiple is between 0.3 to 2.0.
18. method according to claim 15 is characterized in that: respectively the minor increment between this dummy pattern and this circuit layout pattern is the multiple of this exposure wavelength, and the scope of this multiple is between 0.4 to 2.0.
19. an optical approaching correcting method, the optics closing effect when being used for reducing pattern transfer producing process, this method includes the following step:
One light shield is provided;
Provide a preboarding to be formed in circuit layout pattern on this light shield;
This circuit layout pattern is carried out an indicative of local optical near revising, to obtain a correction circuit layout patterns; And
Form this correction circuit layout patterns in this light shield surface, and this light shield surface outside this correction circuit layout patterns forms a plurality of dummy pattern, the wherein phase differential that has 180 ° between the light that penetrates that penetrates light and this dummy pattern of this circuit layout pattern.
20. method according to claim 19 is characterized in that: this indicative of local optical is terminal the deflation and straight line live width increase/reduction design transfer defective of right-angled corner rounding, straight line that is used for revising this circuit layout pattern near revising.
21. method according to claim 19 is characterized in that: these a plurality of dummy pattern are the difference that is used for reducing the pattern density on this light shield surface, to revise the optics closing effect of this light shield when the design transfer.
22. method according to claim 19, it is characterized in that: these a plurality of dummy pattern are a not video picture dummy pattern, can not be transferred in the photoresist layer of a substrate surface, and this circuit layout pattern can be transferred in this photoresist layer along with this pattern transfer producing process along with this pattern transfer producing process.
23. method according to claim 22 is characterized in that: the size of this dummy pattern and quantity are the exposure wavelength along with this pattern transfer producing process, the numerical value hole of focus lamp, and this photoresist layer material and changing.
24. method according to claim 23 is characterized in that: respectively the length of side of this dummy pattern is all the multiple of this exposure wavelength, and this multiple is less than 0.6.
25. method according to claim 23 is characterized in that: respectively the distance between this dummy pattern is the multiple of this exposure wavelength, and the scope of this multiple is between 0.3 to 2.0.
26. method according to claim 23 is characterized in that: respectively the minor increment between this dummy pattern and this circuit layout pattern is the multiple of this exposure wavelength, and the scope of this multiple is between 0.4 to 2.0.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021269963A CN1225678C (en) | 2002-07-30 | 2002-07-30 | Optical approaching correcting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021269963A CN1225678C (en) | 2002-07-30 | 2002-07-30 | Optical approaching correcting method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1472604A CN1472604A (en) | 2004-02-04 |
| CN1225678C true CN1225678C (en) | 2005-11-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021269963A Expired - Lifetime CN1225678C (en) | 2002-07-30 | 2002-07-30 | Optical approaching correcting method |
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| Country | Link |
|---|---|
| CN (1) | CN1225678C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI781684B (en) * | 2020-07-17 | 2022-10-21 | 德商卡爾蔡司Ｓｍｔ有限公司 | Method, computer program and apparatus for repairing a defect of a lithographic mask, and repaired lithographic mask and exposure system |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101989309B (en) * | 2009-08-05 | 2013-11-06 | 联华电子股份有限公司 | Layout chart correction method |
| CN102931184B (en) * | 2011-08-12 | 2016-09-14 | 联华电子股份有限公司 | Semiconductor structure and preparation method thereof |
| CN103576442B (en) * | 2012-07-26 | 2016-05-11 | 无锡华润上华半导体有限公司 | A kind of optical proximity correction device and antidote |
| CN114371596A (en) * | 2022-03-22 | 2022-04-19 | 合肥晶合集成电路股份有限公司 | Mask and correction method thereof |
-
2002
- 2002-07-30 CN CNB021269963A patent/CN1225678C/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI781684B (en) * | 2020-07-17 | 2022-10-21 | 德商卡爾蔡司Ｓｍｔ有限公司 | Method, computer program and apparatus for repairing a defect of a lithographic mask, and repaired lithographic mask and exposure system |
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| Publication number | Publication date |
|---|---|
| CN1472604A (en) | 2004-02-04 |
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Granted publication date: 20051102 |