CN101373326A - Photo mask layout - Google Patents
Photo mask layout Download PDFInfo
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- CN101373326A CN101373326A CNA2007101468254A CN200710146825A CN101373326A CN 101373326 A CN101373326 A CN 101373326A CN A2007101468254 A CNA2007101468254 A CN A2007101468254A CN 200710146825 A CN200710146825 A CN 200710146825A CN 101373326 A CN101373326 A CN 101373326A
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Abstract
The invention discloses a photomask layout pattern. The photomask layout pattern includes an H-shaped pattern, which includes a first straight line pattern, a second straight line pattern and a middle area connecting the first straight line pattern and the second straight line pattern, wherein the first straight line pattern is mutually parallel with the second straight line pattern; a plurality of dense lines and gap patterns which are similar to the zebra stripe in shape are formed in the middle area, wherein the gap between the dense lines and the gap patterns is required to be small enough to exceed the analysis ability of a photo exposure machine, so that the light energy penetrating the middle area is not high enough to expose the dense lines and the gap patterns in the photoresist.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of photo mask layout of improvement is suitable for the transfer of H type pattern, and need not revise through optics is approaching (optical proximity correction, OPC).
Background technology
On semiconductor technology, in order successfully to transfer to the pattern of integrated circuit (integrated circuits) on the semi-conductor chip, must earlier circuit pattern be designed on photo mask layout, the optical mask pattern of exporting according to photo mask layout (photomask pattern) is made photomask again, and the pattern on the photomask is transferred on this semi-conductor chip in certain proportion.
Because critical dimension (the critical dimension of the pattern that on photomask, can produce, CD) can be subject to the resolution limit (resolution limit) of exposure bench (optical exposure tool), therefore working as integrated level (integration) improves gradually, the circuit pattern design is more and more littler, carry out exposure technology when carrying out design transfer at the optical mask pattern that these high density are arranged, be easy to produce optics closing effect (optical proximity effect, OPE), cause the deviation (deviation) of design transfer.For example right-angled corner rounding (right-angled corner rounded), the terminal deflation of straight line (line end shortened) and increase of straight line live width or reduction (line width increase/decrease) etc. all are the photomask pattern defects that common optics closing effect is caused.
Cause the optical mask pattern transfer distortions for fear of above-mentioned optics closing effect, usually when making photomask all can to photo mask layout carry out optics near revise (optical proximity correction, OPC), to eliminate the optics closing effect.Its mode is at the suprabasil primary light mask pattern of semiconductor with the desire exposure, earlier with computer-aided design (CAD) (computer aided design, CAD), calculated correction with data computer and package software computing, obtain the correction optical mask pattern different with the primary light mask pattern, should revise optical mask pattern input computing machine again and file, and make this revised pattern on photomask.
See also Fig. 1 and Fig. 2, a kind of H type of Fig. 1 illustration layout patterns wherein, Fig. 2 illustrates is (after-develop-inspect, ADI) layout result after the development of H type layout patterns after photoetching process is transferred on the photoresist of Fig. 1.As shown in Figure 1, (dash area is light tight chromium pattern in the H type layout patterns 1 of original design, white space is a printing opacity), do not add any OPC auxiliary patterns, but, after transferring on the photoresist, can find that interval region 2 has the situation that shortens and retreat through photoetching process, compare with the ideal position that dotted line is represented, about each Bian Yuekeda 50nm of its off-set value.Another defective is to occur in the linear interval zone 3 adjacent with H type layout patterns 1, and it can be affected simultaneously and the phenomenon of live width reduction takes place.
In the past, such defective mainly is to utilize the OPC method, as shown in Figure 3, adds head hammer (hammer head) auxiliary patterns 4 in H type layout patterns.Yet the practice that only adds head hammer auxiliary patterns 4 still can not solve width reduction (tapered profile) problem of adjacent straight line interval region 3.In addition, adopt the OPC method to form in the past and revise photomask, not only complicated many on the step, cost also improves relatively.
Summary of the invention
Therefore, fundamental purpose of the present invention is promptly providing a kind of photo mask layout of improvement, to solve the problem of above-mentioned Prior Art.
For reaching above-mentioned purpose, the invention provides a kind of photomask layout pattern, include H type pattern, it comprises first straight-line pattern, second straight-line pattern and the zone line that connects this first straight-line pattern and this second straight-line pattern, wherein this first straight-line pattern and this second straight-line pattern are parallel to each other, are provided with the intensive lines and the intermittent pattern of many class zebra stripes (zebra-crossing) in this zone line.Wherein the spacing of these intensive lines and intermittent pattern must be little of the analytic ability that can surpass exposure bench, makes the light ray energy that penetrates this zone line be not enough to allow these intensive lines and intermittent pattern be exposed in photoresist.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred implementation cited below particularly, and conjunction with figs. are described in detail below.Yet following preferred implementation and graphic only for reference and explanation usefulness are not to be used for to the present invention's limitr in addition.
Description of drawings
Fig. 1 illustrates a kind of H type layout patterns.
Fig. 2 illustrates is layout result after the development of H type layout patterns after photoetching process is transferred on the photoresist of Fig. 1.
What Fig. 3 illustrated is layout patterns after the correction that adds in H type layout patterns after head is hammered auxiliary patterns into shape.
What Fig. 4 illustrated is the photo mask layout of improveing according to one embodiment of the present invention.
Fig. 5 illustrates is result after the development after photo mask layout is transferred on the photoresist among Fig. 4.
Description of reference numerals
1 H type layout patterns, 2 interval regions
3 linear interval zone, 4 hammers auxiliary patterns
10 H type pattern 10a, first straight-line pattern
The 10b second straight-line pattern 10c zone line
12 interval region 14a interval regions
20b the 4th straight-line pattern 100 photo mask layouts
102 intensive lines 104 intermittent patterns
Embodiment
See also Fig. 4, what it illustrated is the photo mask layout of improveing according to one embodiment of the present invention, wherein, represents lighttight pattern with the shadow region equally, and for example, the chromium pattern is represented the pattern of printing opacity with blank (blank) zone.
Fundamental purpose of the present invention is will accurately transfer in the photoresist as photomask layout Figure 100 that Fig. 4 described, wherein, the retreating of interval region 12 each limit shortened situation and preferably can be controlled in and be about below the 10nm, and linear interval 14a that H type pattern both sides are adjacent and the width reduction problem of 14b also can achieve a solution.
As shown in Figure 4, photomask layout Figure 100 comprises H type pattern 10, and it comprises the first straight-line pattern 10a, the second straight-line pattern 10b and connects the first straight-line pattern 10a and the zone line 10c of the second straight-line pattern 10b.Wherein, the first straight-line pattern 10a and the second straight-line pattern 10b are parallel to each other, and the axis of reference Y-axis in figure is arranged.
According to a preferred embodiment of the invention, the live width L of the first straight-line pattern 10a
1Live width L with the second straight-line pattern 10b
2Both are identical, for example, and the live width L of the first straight-line pattern 10a
1Live width L with the second straight-line pattern 10b
2Be 0.11 micron (L
1=L
2=0.11 μ m).
According to a preferred embodiment of the invention, the live width L of the first straight-line pattern 10a
1, the second straight-line pattern 10b live width L
2And first straight-line pattern 10a identical with interval width S three between the second straight-line pattern 10b, for example, the live width L of the first straight-line pattern 10a
1, the second straight-line pattern 10b live width L
2Be 0.11 micron (L with interval width S
1=L
2=S=0.11 μ m).
According to a preferred embodiment of the invention, zone line 10c is about about 0.37 micron along the length of axis of reference Y-axis.The invention is characterized in and be provided with many intensive lines 102 and interval 104 patterns of arranging along the axis of reference X-axis in the zone line 10c, similar zebra stripes (zebra-crossing) pattern, the spacing (pitch) that it is characterized in that intensive lines 102 and interval 104 patterns must be little of the analytic ability (resolution ability) that can surpass exposure bench, makes the light ray energy that penetrates zone line 10c be not enough to allow intensive lines 102 and intermittent pattern 104 quilt in photoresist be exposed to get final product.
For instance, with present 193nm exposure bench, under the situation of not using off-axis illumination resolution reinforcement technology such as (off-axisillumination), the spacing of then intensive lines 102 and interval 104 patterns gets final product less than 130nm, and the ratio of the width of the live width of lines 102 and intermittent pattern 104, then can be for example 65/65 or 90/40, but be not limited thereto.
In addition, according to a preferred embodiment of the invention, the opposite side of the first straight-line pattern 10a with respect to zone line 10c, other is provided with the 3rd straight-line pattern 20a, is interval region 14a between the 3rd straight-line pattern 20a and the first straight-line pattern 10a.The opposite side with respect to zone line 10c of the second straight-line pattern 10b, other is provided with the 4th straight-line pattern 20b, is interval region 14b between the 4th straight-line pattern 20b and the second straight-line pattern 10b.
Wherein, according to a preferred embodiment of the invention, the first straight-line pattern 10a parallel to each other, the second straight-line pattern 10b, the 3rd straight-line pattern 20a and the 4th straight-line pattern 20b, its live width is all identical, for example, is 0.11 micron.
According to a preferred embodiment of the invention, the live width of the first straight-line pattern 10a, the second straight-line pattern 10b, the 3rd straight-line pattern 20a and the 4th straight-line pattern 20b is all identical with the width of interval width S, interval region 14a and interval region 14b, for example, be 0.11 micron.
Fig. 5 illustrates is (ADI) layout result after the development after photomask layout Figure 100 among Fig. 4 transfers on the photoresist.The result shows that the short situation of shrinking back after interval region 12 each limit can be controlled in and is about below the 10nm, and the width reduction problem in the linear interval zone that H type pattern both sides are adjacent also is improved.
The above only is the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (8)
1. photomask layout pattern, include H type pattern, it comprises first straight-line pattern, second straight-line pattern and the zone line that connects this first straight-line pattern and this second straight-line pattern, wherein this first straight-line pattern and this second straight-line pattern are parallel to each other, are provided with many intensive lines and intermittent pattern in this zone line.
2. photomask layout pattern as claimed in claim 1, wherein the spacing of these intensive lines and intermittent pattern is little of the analytic ability that can surpass exposure bench, makes the light ray energy that penetrates this zone line be not enough to allow these intensive lines and intermittent pattern be exposed in photoresist.
3. photomask layout pattern as claimed in claim 1, wherein the spacing of these intensive lines and intermittent pattern is less than 130nm.
4. photomask layout pattern as claimed in claim 1, wherein this first straight-line pattern, this second straight-line pattern and this intensive lines are light tight zone.
5. photomask layout pattern as claimed in claim 1, wherein this intermittent pattern is a transmission region.
6. photomask layout pattern as claimed in claim 1, wherein these intensive lines and this first straight-line pattern and this second straight-line pattern are quadrature.
7. photomask layout pattern as claimed in claim 1, wherein this first straight-line pattern is identical with the live width of this second straight-line pattern.
8. photomask layout pattern as claimed in claim 7, wherein the live width of this first straight-line pattern and this second straight-line pattern is 0.11 micron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101468254A CN101373326B (en) | 2007-08-24 | 2007-08-24 | Photo mask layout |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101468254A CN101373326B (en) | 2007-08-24 | 2007-08-24 | Photo mask layout |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101373326A true CN101373326A (en) | 2009-02-25 |
| CN101373326B CN101373326B (en) | 2012-01-18 |
Family
ID=40447552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101468254A Active CN101373326B (en) | 2007-08-24 | 2007-08-24 | Photo mask layout |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101373326B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102096308B (en) * | 2009-12-15 | 2012-10-31 | 中芯国际集成电路制造(上海)有限公司 | Mask graph, method for manufacturing mask, and method for correcting mask graph |
| CN103311102A (en) * | 2012-03-13 | 2013-09-18 | 格罗方德半导体公司 | Methods of making jogged layout routings double patterning compliant |
| CN105826314A (en) * | 2015-01-04 | 2016-08-03 | 旺宏电子股份有限公司 | Mask and semiconductor structure |
| CN105826313A (en) * | 2015-01-04 | 2016-08-03 | 旺宏电子股份有限公司 | Layout design and mask containing same |
| CN106033482A (en) * | 2015-03-18 | 2016-10-19 | 联华电子股份有限公司 | Method for producing layout patterns |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9310674B2 (en) | 2014-02-20 | 2016-04-12 | International Business Machines Corporation | Mask that provides improved focus control using orthogonal edges |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60202230T2 (en) * | 2001-03-14 | 2005-12-15 | Asml Masktools B.V. | Close-effect correction by means of unresolved auxiliary structures in the form of conductor bars |
| JP4578785B2 (en) * | 2003-05-21 | 2010-11-10 | ルネサスエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
| JP2006221078A (en) * | 2005-02-14 | 2006-08-24 | Renesas Technology Corp | Photomask, method for producing mask pattern, and method for forming pattern of semiconductor device |
-
2007
- 2007-08-24 CN CN2007101468254A patent/CN101373326B/en active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102096308B (en) * | 2009-12-15 | 2012-10-31 | 中芯国际集成电路制造(上海)有限公司 | Mask graph, method for manufacturing mask, and method for correcting mask graph |
| CN103311102A (en) * | 2012-03-13 | 2013-09-18 | 格罗方德半导体公司 | Methods of making jogged layout routings double patterning compliant |
| CN103311102B (en) * | 2012-03-13 | 2016-02-10 | 格罗方德半导体公司 | Make the method with the turnover layout coiling of double patterning technical compatibility |
| CN105826314A (en) * | 2015-01-04 | 2016-08-03 | 旺宏电子股份有限公司 | Mask and semiconductor structure |
| CN105826313A (en) * | 2015-01-04 | 2016-08-03 | 旺宏电子股份有限公司 | Layout design and mask containing same |
| CN105826313B (en) * | 2015-01-04 | 2019-01-15 | 旺宏电子股份有限公司 | Layout patterns and mask comprising the layout patterns |
| CN105826314B (en) * | 2015-01-04 | 2019-05-03 | 旺宏电子股份有限公司 | Mask and semiconductor structure |
| CN106033482A (en) * | 2015-03-18 | 2016-10-19 | 联华电子股份有限公司 | Method for producing layout patterns |
| CN106033482B (en) * | 2015-03-18 | 2021-03-16 | 联华电子股份有限公司 | Method for generating layout pattern |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101373326B (en) | 2012-01-18 |
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