CN1224152A - Pt resistance-temp. sensing element and its making method - Google Patents
Pt resistance-temp. sensing element and its making method Download PDFInfo
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- CN1224152A CN1224152A CN 98100363 CN98100363A CN1224152A CN 1224152 A CN1224152 A CN 1224152A CN 98100363 CN98100363 CN 98100363 CN 98100363 A CN98100363 A CN 98100363A CN 1224152 A CN1224152 A CN 1224152A
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Abstract
A method for manufacturing resistor temp sensor of platinum (Pt) includes forming patterned mask on the surface of substrate, etching to form slots based on the pattern, forming a layer of dielectric material (silicon nitride or SiO2) on the surface of substrate and slots, plating with a Pt film, forming recess and smooth areas respectively on the surfaces of dielectric and Pt film, and surficial grinding. Said sensor is composed of silicon substrate, dielectric layer attached to substrate and Pt circuit attached to dielectric layer. V-shaped slots are formed on Pt surface.
Description
A kind of resistance temperature sensing element of the relevant what of the present invention and manufacture method thereof, especially relevant what a kind of platinum resistance temperature sensing element and manufacture method thereof.
The resistance temperature sensing element is that the resistance by conductor can vary with temperature and the physical phenomenon that changes is measured temperature.For the employed conductor material of resistance temperature sensing element, within certain temperature range, its resistance value can rise with the mode of the increase of showing temperature with linearity, this moment its slope (slope) promptly be defined as its temperature-coefficient of electrical resistance (temperature coefficient of resistance, TCR).The temperature-coefficient of electrical resistance of general conductor is higher, and then its sensitivity to the what temperature variation is higher.The impurity that is wherein contained as if the metal or alloy as conductor material is many more, and its temperature-coefficient of electrical resistance value is then low more.
Because the chemistry and the physical property of platinum (platinum) itself are all more stable, platinum is used as the reference material that measures resistance and temperature for a long time.When making the resistance temperature sensing element,, make that platinum resistance temperature sensing element is higher than common metal to the sensitivity of what temperature variation because platinum has higher temperature-coefficient of electrical resistance with what.In addition, the temperature-coefficient of electrical resistance of platinum is to change in the unusual mode of approximately linear in-200 ℃～1000 ℃ temperature range, thereby in the wider temperature range of the applicable what of platinum resistance temperature sensing element.Therefore, the various characteristics of relevant platinum is studied very thorough, and platinum resistance temperature sensing element is widely used.Close the specification and the standard of what platinum resistance temperature sensing element, can be divided into three kinds of Europe rule, U.S. rule and sundials, then trend is used Europe rule standard at present.The temperature-coefficient of electrical resistance standard value of the platinum resistance temperature sensing element of Europe rule be 3850ppm (℃)-1.
In addition, the platinum circuit still has an electrology characteristic that is called " bulk effect ", when promptly the platinum circuit of membrane structure and body shape (bulk) structure being compared, the temperature-coefficient of electrical resistance value of the platinum circuit of body shape structure can be high than the platinum circuit of membrane structure, therefore, generally speaking, it is preferable to have its sensitivity of platinum resistance temperature sensing element of body shape structure platinum circuit.
At present commercially available platinum resistance temperature sensing element price is very expensive, except that Yin Baijinben as the precious metal, its manufacturing cost is higher also occupies very big factor.In known platinum resistance temperature sensing element, be the circuit pattern that on the surface of a dielectric medium, forms platinum resistance temperature sensing element, to make platinum resistance temperature sensing element.Yet the attached outstanding power (adhesion) between highly purified platinum and the dielectric medium is very poor usually, and platinum is easy to from the dielectric layer sur-face peeling when forming circuit pattern, and can have the material of higher attached outstanding power that its shortcoming is respectively arranged with platinum.Very coarse as alumina surface, be difficult for to form fine pattern, again because the high rigidity of aluminium oxide, cutting is difficult for and its surface finish cost higher.Sapphire (sapphire) price is crossed the what costliness, and is difficult for cutting into less wafer.And silicon substrate can form alloy with platinum, changes its characteristic.
For solving the problem of attached outstanding power, in the case of United States Patent (USP) case numbers 4129848, a kind of platinum resistance temperature sensing element autofrettage is proposed.Shown in Figure 1A, at first on silicon substrate 11, form layer of silicon dioxide as dielectric layer 12, and the surface of handling dielectric layer with high-octane sputter etching (sputtering etch), make the surface of dielectric layer etch pit (etch pits) occur (Figure 1B), right Hou is sputter last layer metal level 13 (as platinum) again.This moment is because the surface of dielectric layer 12 is comparatively coarse, so the attached outstanding power between metal level 13 and the dielectric layer increases (Fig. 1 C).Surface at metal level 13 forms the quartzy shade 14 (Fig. 1 D) that one deck has the positive pattern (positive pattern) of required circuit; right Hou is carried out sputter etching; metal level 13 is not subjected to the partially-etched of quartzy shade 14 protections to be fallen; again quartzy shade 14 is removed, just can be obtained the metallic circuit pattern 15 (Fig. 1 F) of resistance temperature sensing element.But because the selectivity of sputter etching is not good, can't an etch metal layers 13 and do not invade dielectric layer 12.In addition, handle metal level 13 in the sputter etching mode, can cause being deposited (deposit) in metallic circuit pattern 15 from the small number of molecules of dielectric layer 12 and quartzy shade 14, yet for platinum, for keeping its temperature-coefficient of electrical resistance value, must have high purity, this a spot of impurity can seriously influence its accuracy to platinum resistance temperature sensing element very much.
Employed on the market at present platinum resistance temperature sensing element generally is that circuit pattern with platinum is formed on the dialogue gold utensil and has on the base material of preferable attached outstanding power, as aluminium oxide, magnesium oxide or the like.In the case of United States Patent (USP) case numbers 4805296, be surface deposition one deck aluminium oxide at silicon substrate, with the Hou of platinum sputter, form required pattern with sputter etching again on the surface of aluminium oxide.The method still has two kinds of above-mentioned shortcomings.Description from preamble is difficult for suitable carrying out to the sputter etching of platinum, and causes the infiltration of impurity easily as can be known; And because the chemical stability of platinum, also can't be with the pattern of wet etching (wet etch) formation platinum.Therefore, in the patent case of relevant platinum resistance temperature sensing element, most of cases (as patent cases such as United States Patent (USP) cases numbers 4050052,4103275,4469717,4627902 and 4649365) only are described the treatment conditions between platinum layer and the dielectric layer, and the forming process or the detailed step of its platinum circuit pattern can't be described.
Therefore, in the case of United States Patent (USP) case numbers 5089293, proposed a kind of platinum resistance temperature sensing element manufacture method that does not need platinum is carried out sputter etching, the base material that is adopted has the aluminum oxide base material 21 of good attached outstanding power for the dialogue gold utensil.Shown in Fig. 2 A, at first on the surface of aluminum oxide base material 21, form layer of silicon dioxide layer 22, and on silicon dioxide layer 22, forming the photoresistance pattern 24 (Fig. 2 B) of negative plate pattern (negative pattern) with required circuit pattern with photoresistance (photoresist), right Hou is etched into silicon dioxide layer 22 in the negative plate pattern (Fig. 2 C) of required circuit pattern.Expose on the surface of partial oxidation aluminium base 21 at this moment, forms required circuit pattern.Photoresistance pattern 24 is removed fully (Fig. 2 D) and sputter one deck platinum layer 23.This moment platinum layer 23 some what silicon dioxide pattern 22 the surface, on the other surface that is deposited on not the aluminum oxide base material 21 that is covered by silicon dioxide pattern 22 (Fig. 2 E).The sputter of platinum is made that the platinum layer 23A on attached outstanding what silicon dioxide pattern 22 side surfaces is extremely thin, and has cell texture, shown in Fig. 2 F by careful control.The height of silicon dioxide pattern 22 is about 1.3 to 1.5 times of platinum layer 23 thickness, to guarantee existing of platinum layer 23A.The Hou that platinum layer 23 sputters are finished is carried out etching with special etch liquid, and this etching solution only can carry out etching to silicon dioxide pattern 22, and can not react with aluminum oxide base material 21 or platinum layer 23, as hydrofluorite.The penetrable cell texture of crossing platinum layer 23A of etching solution this moment enters between platinum layer 23 and the aluminum oxide base material 21, and silicon dioxide pattern 22 is etched away.When silicon dioxide pattern 22 was removed fully, the lip-deep part of original position what silicon dioxide pattern 22 only was subjected to the support of platinum layer 23A; Because platinum layer 23A is extremely thin, and has cell texture, so can the lip-deep part of this what silicon dioxide pattern 22 be removed in the mode of mechanical treatment.The platinum on what aluminum oxide base material 21 surfaces, residual position just form the required platinum circuit pattern 25 of platinum resistance temperature sensing element (Fig. 2 G).In this known manufacture method, employed step and material all need be through selecting, and avoid mixing of impurity and platinum, to keep the high-purity of platinum.
In the platinum resistance temperature sensing element manufacture method that aforesaid U.S. Patent case number 5089293 cases are proposed, describe the method that the platinum circuit pattern forms really in detail, and effectively keep the high-purity of platinum.But it adopts aluminium oxide as base material, because the use amount of aluminum oxide base material is few, and higher by the hardness of what aluminium oxide, processing of what Hou preface and other treatment step are difficult for carrying out.And employed etching solution need penetrate porous platinum layer structure, so that silicon dioxide layer is carried out etched treatment step, also needs to develop special processing procedure, even need specially designed manufacturing equipment, thereby can increase substantially manufacturing cost.
From aforementioned known techniques as can be known, if can pass through particular design, with utilize general semiconductor industry the material and the processing procedure that often use make platinum resistance temperature sensing element, and effectively keep the high-purity of platinum, because of producing in a large number in batch (batch) mode, make the production quality have consistance, then must lower the manufacturing cost of platinum resistance temperature sensing element in a large number, and then reduce the price of platinum resistance temperature sensing element.Again because the present invention uses silicon wafer as base material, so can produce platinum resistance temperature sensing element and other integrated circuit simultaneously on a slice silicon wafer.
One of purpose of the present invention is to provide a kind of and utilizes general semiconductor material as platinum resistance temperature sensor of base material and preparation method thereof.
Two of purpose of the present invention is to provide a kind of silicon wafer that utilizes as platinum resistance temperature sensor of base material and preparation method thereof.
Three of purpose of the present invention is to provide high platinum resistance temperature sensor of a kind of temperature-coefficient of electrical resistance value and preparation method thereof.
Four of purpose of the present invention is to provide a kind of platinum circuit with approximation shape, and has platinum resistance temperature sensor of higher sensitivity and preparation method thereof.
For achieving the above object, the present invention takes following scheme:
The material of silicon wafer as base material used in preferred embodiment of the present invention.At first with the silicon dioxide pattern as shade (mask), go out to have the etching bath of the required pattern of platinum circuit at the silicon substrate surface etching, the Hou that shade is removed is again with the surface oxidation of silicon substrate, to form the dielectric layer of layer of silicon dioxide.Because etching bath is to form with etching mode, the surface of its depression is comparatively coarse, then keeps smooth without etched silicon substrate surface.So the silicon dioxide top layer of oxidation Hou can be distinguished into the coarse sunk surface that grows from the etching bath surface, and by the smooth surface that grows without etched smooth silicon substrate surface.On the surface with platinum sputter what silicon dioxide layer, the platinum on the what smooth surface of position forms a smooth platinum thin film at this moment, and the platinum on the what sunk surface of position then can form a platinum sputtered layer along the surface of etching bath.Hou carry out surface grinding and handle, remove the platinum thin film on the sputter what smooth surface.And the platinum sputtered layer on the what sunk surface of position is because can directly be ground, and higher to the attached outstanding power of coarse sunk surface, therefore still can exist in the what etching bath.What is formation one and the identical shaped platinum circuit of etching bath on silicon substrate, passes through steps such as continuous thermal treatment of Hou and wiring again, just can finish the manufacturing of platinum resistance temperature sensor.
In addition, use special etching solution during as if the what etching, etching bath is etched into the V-type groove, then the platinum in the etching bath of sputter what can accumulate in the bottom of V-type etching bath, thereby formed platinum circuit structure has the characteristic of analog shape.Like this then can increase the temperature-coefficient of electrical resistance value of platinum circuit, the sensitivity that also can improve platinum resistance temperature sensing element.
The concrete steps and the structure of manufacture method of the present invention are as follows:
The manufacture method of a kind of platinum resistance temperature sensing element of the present invention comprises the following steps:
On substrate surface, form shade, the negative plate pattern of the platinum circuit of the platinum resistance temperature sensing element that the suitable what of the pattern of shade institute desire forms;
Utilize the window of shade that base material is carried out etching, on base material, to form groove, the positive plate pattern of the platinum circuit of the suitable what platinum of the pattern of groove resistance temperature sensing element;
Shade is removed fully;
Form one dielectric layer on the surface of base material that etching is finished and groove, dielectric layer is divided into the smooth region of shaggy sunk area and position what substrate surface in the what groove;
Plate one deck platinum thin film on the surface of dielectric layer, platinum thin film is divided into second platinum layer on the smooth region of first platinum layer and position what substrate surface on the sunk area in the what groove; And
Base material and the dielectric layer that is coated with platinum thin film carried out surface grinding, second platinum layer on the smooth region of position what dielectric layer is removed, and the still attached work of first platinum layer in the what groove of position is used the platinum circuit that forms platinum resistance temperature sensing element in groove.
The manufacture method of described platinum resistance temperature sensing element is characterized in that, described base material is a silicon substrate.
The manufacture method of described platinum resistance temperature sensing element is characterized in that, described dielectric layer is with the formed silicon dioxide layer of the surface oxidation of described silicon substrate or with the surfaces nitrided formed silicon nitride layer of described silicon substrate.
The manufacture method of described platinum resistance temperature sensing element is characterized in that, described groove is a v-depression.
The manufacture method of another kind of platinum resistance temperature sensing element of the present invention comprises the following steps:
On a dielectric medium substrate surface, form shade, the negative plate pattern of the platinum circuit of the platinum resistance temperature sensing element that the suitable what of the pattern of shade institute desire forms;
Utilize the window of shade that the dielectric medium base material is carried out etching, on the dielectric medium base material, to form groove, the platinum circuit pattern of the suitable what platinum of the pattern of groove resistance temperature sensing element, the smooth region of the dielectric medium base material thereby the shaggy sunk area that can be divided into a what groove and position what dielectric medium substrate surface;
Shade is removed fully;
Form one deck platinum thin film on the surface of dielectric medium base material, platinum thin film can be divided into first platinum layer on the sunk area of what groove surfaces, with second platinum layer on the smooth region of position what dielectric medium substrate surface; And
The dielectric medium base material that is coated with platinum thin film is carried out surface grinding, second platinum layer on the smooth region of position what dielectric medium substrate surface is removed, and the still attached work of first platinum layer in the what groove of position is used the platinum circuit that forms platinum resistance temperature sensing element in groove.
The manufacture method of described platinum resistance temperature sensing element is characterized in that, described groove is a v-depression.
A kind of platinum resistance temperature sensing element of the present invention, comprise a base material, attached to the dielectric layer on the base material and attached to the platinum circuit on the dielectric layer;
It is characterized in that described base material is a silicon substrate; The surface that is attached with the platinum circuit at silicon substrate and dielectric layer forms groove.
Described platinum resistance temperature sensing element,
It is characterized in that described groove is a v-depression.
Described platinum resistance temperature sensing element,
It is characterized in that described dielectric layer is with the surfaces nitrided formed silicon nitride of described silicon substrate or with the formed silicon dioxide layer of the surface oxidation of described silicon substrate.
The present invention has following effect:
At first, base material used in the present invention is a silicon substrate, be the semi-conductor industry material of normal use, stable, the production very easily in a large number of supply, secondly, step used in the present invention be in the general semi-conductor industry the processing procedure that often uses, needn't be through complicated processing mode, not only simplify the processing procedure of platinum resistance temperature sensing element, save required time, manpower and the money of the new processing procedure of research and development, can use the general plant equipment of using of semiconductor industry simultaneously, and then produce in a large number with batch mode, the quality of production has consistance, also thereby reduce manufacturing cost.In addition, step used in the present invention all can not make impurity enter in the platinum, and the platinum resistance temperature sensing element degree of accuracy of manufacturing is higher.If use the etching bath of special shape, still can make circuit tendency body shape structure, increase its temperature-coefficient of electrical resistance value, and improve the sensitivity of platinum resistance temperature sensing element.And most important difference is that the platinum circuit is hidden in the etching bath of what substrate surface lower recess in what platinum resistance temperature of the present invention sensing element structure, the platinum circuit is directly exposed on the substrate surface different with known techniques, can forms required circuit pattern easily in the mode of mechanical treatment.
The accompanying drawing simple declaration
Figure 1A to 1E: be the sectional view in resistance temperature sensing element each stage of what in the known platinum resistance temperature sensing element manufacture method.
Fig. 2 A to 2G: be the sectional view in resistance temperature sensing element each stage of what in another known platinum resistance temperature sensing element manufacture method.
Fig. 3 A to 3H: in the platinum resistance temperature sensing element manufacture method for preferred embodiment of the present invention, the sectional view in resistance temperature sensing element each stage of what.
Fig. 4 is Fig. 3 E: be the partial enlarged drawing of V-type etching bath rough surface.
Fig. 5 is Fig. 3 G: the partial enlarged drawing of platinum thin film, silicon dioxide layer and base material.
Fig. 6 is Fig. 3 H: the square section partial enlarged drawing of finishing Hou platinum resistance temperature sensing element for manufacturing.
Fig. 7: be the stereographic map of the platinum resistance temperature sensing element of preferred embodiment manufacturing of the present invention.
Reaching preferred embodiment in conjunction with the accompanying drawings is described in detail as follows method of the present invention and feature:
Shown in Fig. 3 A and 3B, platinum resistance temperature sensing element of the present invention be adopt semiconductor industry institute often the silicon wafer of use as base material.At first form layer of silicon dioxide layer 32 on the surface of silicon substrate 31, and form one deck photoresistance 33 above silicon dioxide layer 32, wherein the suitable what of the pattern of photoresistance 33 institute desire forms the negative plate pattern (negative pattern) of platinum circuit pattern.Utilize photoresistance 33 silicon dioxide layer 32 to be carried out etching, remove the part that is not subjected to photoresistance 33 protections,, make the part surface of silicon substrate 31 come out, shown in Fig. 3 C on silicon dioxide layer 32, to form window (window) as shade.The Hou of finishing in etching, the platinum circuit pattern that forms from the suitable what of the formed pattern of the silicon substrate 31 part surfaces institute desire that window comes out.
Next with photoresistance 33 and silicon dioxide layer 32 as the etching shade, silicon substrate 31 is carried out etching.Adopt special etching solution (etching solution that for example contains KOH) to comply with orientation (orientation-dependent) etching herein, because these etching solutions are fast far beyond the etch-rate to the silicon of (111) face to the etch-rate of the silicon of (100) face, so can form the V-type etching bath on the surface of silicon substrate 31, shown in Fig. 3 D.Present embodiment adopts according to being orientated the purpose that is etched with the etching bath of formation V-type what is hereinafter illustrated, yet, the also applicable what the present invention of the etching bath of other shapes.Silicon substrate 31 lip-deep photoresistances 33 and silicon dioxide layer 32 that etching is finished are removed, just can access the silicon substrate with V-type etching bath 34 31 shown in Fig. 3 E.With reference to figure 4, this moment, two kinds of different surfaces appearred in silicon substrate 31 meetings, the smooth smooth surface 31A on the original silicon substrate of the what of ascending the throne surface, and the coarse sunk surface 31B on position what V-type etching bath 34 inside surfaces.Had smooth surface because silicon substrate 31 is former herein, the surface in the etching bath then becomes comparatively coarse because of etching action.
Next the substrate that this is plated platinum carries out surface grinding (polishing), this surface grinding step is carried out under very gentle condition, employed slurry (slurry) and grinding pad (polishing pad) can not have influence on the purity of platinum all through screening.Part on 36 what smooth surfaces of platinum thin film this moment 35A can directly be subjected to the effect of slurry and grinding pad and be ground away, or peels off from smooth surface 35A.To the part of what platinum thin film 36 attached works on the 35B of V-arrangement etching bath 34 sunken insides surface, because within the what etching bath of position, be subjected to the effect of the space barrier of etching bath 34, what its interior platinum thin film 36 in position can directly not be subjected to the acting force of slurry and grinding pad; In addition, sunk surface 35B is comparatively coarse, and platinum is had preferable attached outstanding power, thus platinum can the sunk surface 35B of attached work in V-arrangement etching bath 34 on.In addition, because the platinum thin film 36 of close V-arrangement etching bath 34 head portions as thin as a wafer, from then on platinum thin film 36 can partly rupture.So far, a part of platinum thin film 36 on the what smooth surface 35A of position can break away from from silicon dioxide layer 35, and the part of attached work on the 35B of V-arrangement etching bath 34 sunken insides surface then stays and form platinum circuit 37, as Figure 6 and Figure 7.This platinum circuit 37 has body shape structure, and therefore, the general film platinum resistance temperature sensing element of the sensitivity of the platinum resistance temperature sensing element of manufacturing of the present invention is higher.
The two ends of the platinum circuit 37 that forms with said method have thread tacking 38 (bonding pad), can be used for being connected with circuit external.
Except that above-mentioned advantage, by with being arranged on the silicon substrate of platinum circuit success, can utilize the manufacturing course of general integrated circuit to make, can improve the density of platinum resistance temperature sensing element, make its miniaturization.Again because the present invention is to use silicon wafer as base material, so can on a slice silicon wafer, make platinum resistance temperature sensing element and other integrated circuit simultaneously.In addition, because the live width of platinum circuit is dwindled, circuit is repaired the step of (trimming) and can be carried out easilier.
In addition, the platinum circuit 37 of present embodiment shown in Figure 7 is to be hidden within the etching bath 34, is subjected to the barrier of etching bath 34.In the treatment step that Hous such as ensuing thermal treatment and wiring continue, can be difficult for causing the damage of platinum circuit by safekeeping.
Claims (11)
1, a kind of manufacture method of platinum resistance temperature sensing element comprises the following steps:
On substrate surface, form shade, the negative plate pattern of the platinum circuit of the platinum resistance temperature sensing element that the suitable what of the pattern of shade institute desire forms; It is characterized in that:
Utilize the window of shade that base material is carried out etching, on base material, to form groove, the positive plate pattern of the platinum circuit of the suitable what platinum of the pattern of groove resistance temperature sensing element;
Shade is removed fully;
Form one dielectric layer on the surface of base material that etching is finished and groove, dielectric layer is divided into the smooth region of shaggy sunk area and position what substrate surface in the what groove;
Plate one deck platinum thin film on the surface of dielectric layer, platinum thin film is divided into second platinum layer on the smooth region of first platinum layer and position what substrate surface on the sunk area in the what groove; And
Base material and the dielectric layer that is coated with platinum thin film carried out surface grinding, second platinum layer on the smooth region of position what dielectric layer is removed, and the still attached work of first platinum layer in the what groove of position is used the platinum circuit that forms platinum resistance temperature sensing element in groove.
2, the manufacture method of platinum resistance temperature sensing element according to claim 1 is characterized in that, described base material is a silicon substrate.
3, the manufacture method of platinum resistance temperature sensing element according to claim 1 is characterized in that, described dielectric layer is with the formed silicon dioxide layer of the surface oxidation of described silicon substrate.
4, the manufacture method of platinum resistance temperature sensing element according to claim 1 is characterized in that, described dielectric layer is the surfaces nitrided formed silicon nitride layer with described silicon substrate.
According to the manufacture method of each described platinum resistance temperature sensing element in the claim 1～4, it is characterized in that 5, described groove is a v-depression.
6, a kind of manufacture method of platinum resistance temperature sensing element comprises the following steps:
On a dielectric medium substrate surface, form shade, the negative plate pattern of the platinum circuit of the platinum resistance temperature sensing element that the suitable what of the pattern of shade institute desire forms;
Utilize the window of shade that the dielectric medium base material is carried out etching, on the dielectric medium base material, to form groove, the platinum circuit pattern of the suitable what platinum of the pattern of groove resistance temperature sensing element, the smooth region of the dielectric medium base material thereby the shaggy sunk area that can be divided into a what groove and position what dielectric medium substrate surface;
Shade is removed fully;
Form one deck platinum thin film on the surface of dielectric medium base material, platinum thin film can be divided into first platinum layer on the sunk area of what groove surfaces, with second platinum layer on the smooth region of position what dielectric medium substrate surface; And
The dielectric medium base material that is coated with platinum thin film is carried out surface grinding, second platinum layer on the smooth region of position what dielectric medium substrate surface is removed, and the still attached work of first platinum layer in the what groove of position is used the platinum circuit that forms platinum resistance temperature sensing element in groove.
7, the manufacture method of platinum resistance temperature sensing element according to claim 6 is characterized in that, described groove is a v-depression.
8, a kind of platinum resistance temperature sensing element of making according to claim 1 or 6 described methods, comprise a base material, attached to the dielectric layer on the base material and attached to the platinum circuit on the dielectric layer;
It is characterized in that described base material is a silicon substrate; The surface that is attached with the platinum circuit at silicon substrate and dielectric layer forms groove.
9, platinum resistance temperature sensing element according to claim 8,
It is characterized in that described groove is a v-depression.
10, platinum resistance temperature sensing element according to claim 8,
It is characterized in that described dielectric layer is with the surfaces nitrided formed silicon nitride of described silicon substrate.
11, platinum resistance temperature sensing element according to claim 8,
It is characterized in that described dielectric layer is with the formed silicon dioxide layer of described silicon substrate surface oxidation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 98100363 CN1116594C (en) | 1998-01-21 | 1998-01-21 | Pt resistance-temp. sensing element and its making method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 98100363 CN1116594C (en) | 1998-01-21 | 1998-01-21 | Pt resistance-temp. sensing element and its making method |
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| CN1224152A true CN1224152A (en) | 1999-07-28 |
| CN1116594C CN1116594C (en) | 2003-07-30 |
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| CN 98100363 Expired - Fee Related CN1116594C (en) | 1998-01-21 | 1998-01-21 | Pt resistance-temp. sensing element and its making method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1306526C (en) * | 2001-08-03 | 2007-03-21 | 雅马哈株式会社 | Method for forming noble metal film pattern |
| CN100415927C (en) * | 2004-10-29 | 2008-09-03 | 精碟科技股份有限公司 | Fliming clamp mask and its filming apparatus |
| CN101517386B (en) * | 2006-08-02 | 2011-02-16 | 海因里希·齐茨曼 | Method for producing a temperature measuring sensor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102017108582A1 (en) * | 2017-04-21 | 2018-10-25 | Epcos Ag | Sheet resistance and thin film sensor |
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1998
- 1998-01-21 CN CN 98100363 patent/CN1116594C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1306526C (en) * | 2001-08-03 | 2007-03-21 | 雅马哈株式会社 | Method for forming noble metal film pattern |
| CN100415927C (en) * | 2004-10-29 | 2008-09-03 | 精碟科技股份有限公司 | Fliming clamp mask and its filming apparatus |
| CN101517386B (en) * | 2006-08-02 | 2011-02-16 | 海因里希·齐茨曼 | Method for producing a temperature measuring sensor |
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| Publication number | Publication date |
|---|---|
| CN1116594C (en) | 2003-07-30 |
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