CN1222204A - Reactive magnetron sputtering appts. and method - Google Patents
Reactive magnetron sputtering appts. and method Download PDFInfo
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- CN1222204A CN1222204A CN 96180323 CN96180323A CN1222204A CN 1222204 A CN1222204 A CN 1222204A CN 96180323 CN96180323 CN 96180323 CN 96180323 A CN96180323 A CN 96180323A CN 1222204 A CN1222204 A CN 1222204A
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Abstract
A method and apparatus for producing optical films on substrates having extremely high packing densities of the same quality as those films produced by ion beam sputtering including a vacuum chamber with a conventional magnetron sputtering system and unusually high speed vaccum pump means. The low pressure of inert gas created by said high speed vacuum pump means being in the range of 5 x 10-5 Torr to 2.0 x 10-4 Torr and the magnetron sputtering system being at least 20" from said substrates. A gas manifold around the magnetron and target material confines the inert working gas in the vincinity of the magnetron and as the gas diffuses and expands into the chamber the high speed vacuum pump means removes the expanded gas from the chamber at the high speed. An ion gun directs ionized reactant gas toward the substrates which has the effect of improving film stoichiometry as well as reducing reactant gas at the magnetron. Multiple magnetron assemblies, multiple target materials and compound target materials may be used.
Description
Technical field of the present invention
The present invention relates to be used on substrate, form the reactive magnetron sputtering appts and the method for the very low pressure of insulation optical coating.The present invention relates to this professional skill field of optical interference filter in this application, this optical interference filter is applicable to (for example) laser mirror and output coupler.In such film, thin films scattering, absorption and defective must maintain minimum level.So far, only know that the processing film method of making successfully effort in this respect is the ion assisted deposition (IAD) of ion beam sputtering (IBS) or a kind of less degree.To further introduce IBS below.
Prior art
Utilizing IBS to produce need very low-level scattering and the optical coating of absorption.Make in this way, will be at the target (source) that will form by required coated material in the high energy ion beam directive in 500 to 1500 electron-volts of energy regions the high vacuum environment very much.Ion bombardment makes target dot matrix generation momentum change, thereby from the target sputter or move out of atom (nucleic or particle).Then, the nucleic of sputter condenses on the substrate.Pressure in the chamber preferably maintains on the very low level, so that prevent the particle and the collision of background gas gas phase of sputter.
There is great mass of data to provide IBS with respect to other coating technology, have the reason of improving the optical thin film performance such as evaporation and other sputtering method.
In 32, No. 849 " making the method for multilayer optical film " linings of United States Patent (USP) Re, the initial discovery of people such as Wei is used for the benefit of the IBS of laser high reflection mirror.In the patent of Wei Dengren, as long as utilize target of single ion gun irradiation just can produce the quarter-wave bundle that is used for laser mirror.Fig. 1 (it is the duplicate of the Fig. 1 in the patent of Wei Dengren) has shown an ion gun " A ", a target " B " and a substrate " C ".In this system, the background level of argon gas (rare gas element) remains on 1.5 * 10
-4On this low-down stress level of torr.And the pressure of reactant gases (oxygen) is set on the level of the suitable stoichiometric ratio that can guarantee the deposit level, is 5 * 10 in high-index material promptly
-5Torr and low-index material are 3 * 10
-5In the scope of torr.
People such as Scott, the patent No. is 4,793,908, title is the people's such as another IBS patent use Wei of a " a plurality of ion source method and apparatus that are used for making multilayer optical film " patent, and increased second ionic fluid of alignment substrate, and this substrate sections is made up of required reactive species.Second ionic fluid provides improved optical property.Fig. 2 (it is the duplicate of the Fig. 2 in people's such as Scott the patent) has shown ion gun " A ", target " B ", substrate " C " and second ion gun " D ".In this patent, people such as Scott point out that IBS improves on traditional magnetron sputtering, promptly " ... utilize this device that the gaseous tension at (for example, at the substrate surface place) in the chamber is in a few tenths of or percentum scope of 1 milli torr.This is a great advance, because the last film that forms trends towards comprising gas atom still less, and has improved domain structure and atom pack density ".See that the 2nd hurdle 14-19 is capable.
Utilize above-mentioned technology can produce what is called " low-loss " film, such as film or coating less than the loss of 500ppm even 100ppm.For example, when being used for a kind of purposes such as high reflector laser mirror, the film of producing with above-mentioned technology can have the total loss much smaller than 100ppm.Term used herein " low-loss " film or coating (except as otherwise noted) all refer to have film or the coating less than the 500ppm loss.
" loss " relates to any way except that reflection, in other words
Total loss=1-R, and R=1-T-A-S
Wherein, R is reflection, and T transmits, and A absorbs, and S is scattering.
Gloomy and the Kern of good fortune is in " processing film " this this book (Academic press, New York, 1978) lining says IBS and becomes to be different from other sputter processing, because " low background pressure is in the scattering that less gas combination and less sputtering particle are provided on the road of substrate " (" low background pressure " is italics in original text).As discussed above, this is a significant advantage for the deposit optical thin film.
Non-sputtering technology such as the evaporation refining can not form the film that is suitable for the high quality purposes.Under vacuum condition, to coating material heating and make its evaporation technique that evaporates at this place that the kinetic energy of sputter almost can not be provided, film is grown in porous column mode.In addition, because the little source outburst of gas expansion of capturing or the issuable source material of uneven heating, this evaporation adds trade union and penetrates little particle from thermal source.For this reason, evaporation processing can only be used to form the coating of quite low tolerance.
Direct current or magnetron sputtering have been used to form the insulating coating for quite low tolerance or the use of low film quality purposes.Usually, these methods comprise uses the rare gas element filled chamber, then with ionized inert gas to form the low-power plasma body.Then to target charging, make its negative potential that reaches 400 to 900 volt range, this has effect to bombard target and sputter with the high energy charged ion from the atom or the molecular particle of target.Then, the particle condensation of sputter is on substrate.D.c. sputtering is used to splash-proofing sputtering metal.It is that zero vibration target voltage makes the insulation target by sputter that radio-frequency sputtering utilizes the galvanic current net value.
Under the situation of reaction d.c. sputtering, be about to reactant gases and add chamber to form on the substrate under the situation of laminated film, the reaction that occurs on the substrate rather than on the target is preferably arranged, because when target is covered by the insulation nucleic that reacts, arcing on target also will seriously reduce deposition speed increasing.Many technology of the prior art are used for tackling this problem, they all are the target and the substrate isolation of certain form, make exactly reaction gas pressure on the target maintain one low-level on, prevent target " poisoning ", and on-chip reaction gas pressure maintains on the high level, with the influence reaction.
Authorize people such as this Bryant, name be called " magnetic controlled tube sputtering apparatus and processing " the 4th, 851, in No. 095 United States Patent (USP), part shuttles back and forth mobile on a high speed drum, and the deposit district and of high pressure argon gas comprises between the reaction zone of high energy reaction gaseous plasma and the high speed drum is kept very one.
Authorize people such as Ma Nifu, name is called in the 4th, 392, No. 931 United States Patent (USP)s of " reactive deposition method and apparatus ", target material sputters on the barrel tumbler by an aperture or slit.The inertia working gas enters the target chamber, and reactant gases enters the rest part of chamber.The restriction of described slit is to the amount of target mobile reactant gases.On drum, set up a zone, so that ionization reaction gas and increase film clarity.
The 4th, 931, No. 169 United States Patent (USP)s people such as Fernando SCherer, that name is called " device of coating media on substrate " have also been announced a kind of method of carrying out sputter by aperture, and produce an alternating-current field component to driving DC voltage, to prevent to produce electric arc.In people's such as Fernando SCherer patent, alternating-current field is considered to have the additional effect that increases deposition speed, because increased at the electronics of vibration and the collision between the working gas.This alternating-current field also is considered to have and allows coating pressure to be reduced to the other effect of 0.5 torr.
Authorize the 4th, 946, No. 576 United States Patent (USP)s people such as Wilfried Dietrich, that name is called " device that thin layer is provided to substrate " and also disclose and between negative electrode and substrate, use hole, and near flowing through the substrate of reactant gases, add positive voltage.Reactant gases is by anode ionization, and this anode has the effect that improves film chemical metering ratio.Authorize people such as Wilfried Dietrich, name be called " method and apparatus of the reaction vapour deposition of metal and semiconductor mixtures ", be numbered the 4th, 572, another United States Patent (USP) of No. 840 uses a flow constraint between magnetron and substrate, it equals 40% of space cross section at least.
In all above-cited prior aries, the source is shorter to the distance of substrate.In people's such as this Bryant patent, this distance is 10cm approximately; In people's such as Ma Nifu patent, this distance is 10cm; In people's such as Fernando SCherer patent, this distance is 4cm; The distance that people's such as Wilfried Dietrich ' No. 842 patent has been used 6cm is as an example, and people's such as Wilfried Dietrich ' No. 576 patent does not relate to this distance.About using the imagination of magnetron sputtering to do introduction under the situation of penetrating distance at low pressure and long hair.People such as Bond are in " advanced coating development outline; final report (FR) " (in June, 1994) (New Mexico, the Kirtland base air depot, the Phillips laboratory, having mentioned the magnetron that utilizes 8 inches in PL-TR-93-1033) is a kind of magnetron sputtering processing that applies on the substrate of 8 inches or littler suitable size at diameter.In order to obtain suitable deposition speed, Bond is with 20 ° of angles of magnetron inclination.Bond is reduced in the reaction gas pressure on the magnetron by a kind of " gas delivery processing ", this " gas delivery processing " by the reverse side of a house steward with reactant gases importing or close substrate plane and magnetic control assembly, the inertia working gas is then by the protective shield on magnetron.Doing like this is in order to reduce poisoning and the arcing on target, and help to provide complete reaction and by the film of stoichiometric ratio.Because higher background gaseous tension reduces density of film, Bond attempts to reduce the inert gas pressure in the chamber, and this chamber uses the magnetron that is equipped with special high strength magnet.The characteristics of Bond system are generally to have only the lower coating speed of 0.5 to 1.5 /second.Poisoning, arcing, weak film that this lower coating speed is attributable to target usually react and low applied power.
In addition, in all above-cited prior aries, except people's such as people's such as Fernando SCherer patent and Bond report, the total pressure between substrate and target is maintained at about 3 * 10
-3On traditional sputtering pressure of torr.
Brief description of the present invention
Main purpose of the present invention be produce be equivalent to quality that IBS produces, but optical thin film that in the dc magnetron sputtering system, carry out, that have very high pack density, smooth surface and low scattering.
The method and apparatus that achieves this end comprises a traditional magnetron sputtering system in vacuum vessel, and this vacuum vessel is being equipped the vacuum pump with very high pumping speed.One around the gas main of magnetron and target material with inertia working gas (argon gas) be limited in magnetron near.When this gas from magnetron zone diffusion with when expanding, the vacuum pump with very high pumping speed is eliminated this expanding gas at a high speed in chamber.Like this, the pressure in the chamber will change with the pumping speed of vacuum pump and the limit efficiency of magnetron baffle plate.Reactant gases enters chamber by ion gun, and ion gun makes this ionization of gas and makes its alignment substrate.This will reduce effectively to film provides the suitable needed gas volume of stoichiometric ratio, and reduces the reactant gases at the magnetron place.
The present invention obviously is different from known, previous magnetron sputtering technology and traditional ion beam technology.Its feature is low-down chamber pressure, comprises low-down reaction gas pressure and low-down inert gas pressure.Such as O
2, N
2With the reaction gas pressure (measuring) of NO etc. at coated substrate surface place preferably 2.0 * 10
-5Torr to 1.5 * 10
-4In the scope of torr, preferably 3 * 10
-5Torr to 9 * 10
-5In the scope of torr.This help reducing or eliminating cause by reactant gases at the arcing at magnetron place and make source " poisoning ".In preferred embodiment, at first be directed to the magnetron place such as rare gas elementes such as argon gas, krypton gas, xenons.Make this rare gas element that a rapid pressure drop take place, it is had 5.0 * 10
-5Torr to 2.0 * 10
-4Pressure in the scope of torr preferably makes it have 5 * 10
-5Torr to 1.5 * 10
-4Pressure in the scope of torr.This low chamber pressure can provide long mean free path (MFP), and correspondingly allows than long projection stroke distances the over-drastic collision not to take place between gas to chamber and sputter material.By long, preferably greater than 12 inches, can obtain good coating uniformity more preferably greater than 20 inches or longer projection stroke distances.Low-down chamber pressure might use long projection stroke distances.That is,, can utilize same high magnetron power level to obtain very high coating deposition speed though use this long projection stroke distances.By the film that uses low-down chamber pressure to avoid singularly can to cause usually or the loss of coating quality by higher magnetron power level and long projection stroke distances.Like this, the processing conditions of some keys of preferred embodiment of the present invention and IBS (for example, work in their described in the above same pressure ranges) striking resemblances, but used the dc magnetron sputtering system.This innovative system based on magnetron sputtering has been improved the corresponding cost and the productivity of coating speed and depositing high-quality film coating significantly.
Brief description of drawings
Fig. 1 is the duplicate of the Fig. 1 in people's patents such as Wei of mentioning in the technical background part of the present invention;
Fig. 2 is the duplicate of the Fig. 2 in people's patents such as Scott of mentioning in the technical background part of the present invention;
Fig. 3 is the cross-sectional synoptic diagram of looking of apparatus of the present invention;
Fig. 4 is the cross-sectional synoptic diagram of looking of magnetron sputtering apparatus of the present invention;
Fig. 5 is the cross-sectional synoptic diagram of looking that has apparatus of the present invention of a plurality of magnetron sputtering assemblies;
Fig. 6 is the chart that concerns between display room pressure and the chamber pumping speed, supposes that magnetron pressure is 0.7 micron, the conductivity (C of magnetron assembly
M) be 3000 liters/second; And
Fig. 7 is the chart that concerns between display room pressure and the chamber pumping speed, supposes that magnetron pressure is 0.4 micron, the conductivity (C of magnetron assembly
M) be 3000 liters/second.
The detailed description of preferred embodiment
As mentioned above, Fig. 1 and 2 has shown the speculum that can produce the high quality insulating coating on substrate, can be used for ring-laser gyro with formation.The present invention that will introduce now can produce same high-quality coating, but uses the direct current reaction magnetron sputtering system to replace IBS.The background pressure of rare gas element (for example, argon) can maintain on people such as Wei and people's such as Scott the described level of patent under or identical.Utilize the character of the film that the present invention makes to compare with the IBS coating, wherein, they have especially high tamped density, and smooth surface and low scattering.For example, be far smaller than 0.01% or 100ppm according to the total loss of the high reflector laser mirror of preferred embodiment manufacturing disclosed herein.
Fig. 3 and 4 has shown method disclosed herein and the preferred embodiment of the device made according to this method.Housing 10 forms a vacuum chamber 11, wherein comprises the planetary substrate holder 13 that a low voltage magnetron assembly 12 and has many rotatable sun and planet gear 14.Each sun and planet gear 14 is fixed a substrate towards magnetron assembly 12.In this embodiment, the top of magnetron assembly 12 and the distance L between the sun and planet gear 1 are 16 inches.Magnetron assembly 12 is communicated with the source of supply of working gas (argon) 16 by conduit 17.In this embodiment, housing 10 is that radius is 48 inches a ball, but other shape equally also is suitable for.Housing 10 has a lower sleeve 18, and it is communicated with vacuum chamber 11, and comprises a high speed vacuum pump 20, and a family of power and influence 21 is between vacuum pump 20 and vacuum chamber 11.Yes is used for reducing and keeping the pressure of vacuum chamber for vacuum pump, and it is on the low-down level, promptly 5 * 10
-5Torr to 1.5 * 10
-4The inert gas pressure scope in.
The typical high speed vacuum pump that can be used in the embodiment disclosed herein comprises turbo-pump, cryopump and diffusion pump.In the present invention, can use a kind of bigger pump, such as 16 inches cryopump, or 16 inches turbo-pump, or 16 inches diffusion pump, but the preferably diffusion pump of 16 inches cryopump or 16 inches.The pumping speed of these pumps approximately is: 16 inches cryopump is 5000 liters/second (argons), and 16 inches diffusion pump is 10000 liters/second (referring to Leybold product and vacuum technique handbooks, 1993 years versions).Also can use bigger, such as 20 inches pumps, their pumping speed is: cryopump (N2) is 10000 liters/second, diffusion pump (N2) is 17500 liters/second (referring to Varian vacuum products catalogue 1991-92).Above-mentioned pumping speed is in the throat of pump.
Rotation (the main medullary ray 22) vertical alignment of magnetron assembly 12 and planetary substrate holder 13, and with for the bearing vertical alignment that monitors reference chip 23 usefulness.In this embodiment, stroke between magnetron assembly top and the sun and planet gear or distance L
1It is 16 inches.Each sun and planet gear and the substrate on it rotate around their medullary ray 24.This planetary bearing is used always, except not needing of pointing out below further describes, promptly in this embodiment, planetary diameter is 15 inches, the diameter of substrate is 15 inches, perhaps than 15 inches little virtually any sizes, and the distance L of each planetary medullary ray and main medullary ray 22
2It is 14 inches, so that hold big substrate.Also can use bigger sun and planet gear, for example 24 inches sun and planet gear so that adapt to the substrate and the projection stroke distances of the corresponding increase of size, can obtain bigger improvement by speed thus.
The output of with dashed lines 27 expressions of ion gun 26 is obliquely towards substrate holder 13, and its import is communicated with the source of supply of reaction gas mixtures 28 by conduit 30.Ion gun is to be provided with like this, even the ion and the gaseous mixture of its output cover whole substrate holder 13, and in this embodiment, the top of ion gun and planetary distance L
3It is 20 inches.The major function of ion gun is dual.At first be with similar method corrections of people's patent such as Scotts with improve film performance.Second function may be more important, promptly is used for keeping low reactant gases background pressure.Because ion gun, reactant gases are ionized and alignment substrate.Then, the momentum of reactant gases is carrying it only towards substrate, and does not produce the magnetron of arcing and velocity attenuation towards meeting.Work a spot of, can not influence it significantly to the gas of magnetron diffusion.Typical reaction gas pressure is 2 * 10
-5Torr to 1.5 * 10
-4In the torr scope, preferably 3 * 10
-5Torr to 8 * 10
-5In the torr scope.
One suitable hot-cathode pressure warning unit 31 is connected, so that measure the pressure in the vacuum chamber with vacuum chamber 11.In addition, being provided with one in vacuum chamber can be around the optical gate 32 of pole 33 swings, so that stop the output of the magnetron assembly 12 of with dashed lines 34 expressions.Pole 33 is connected on the platform 35 in any suitable manner, and is connected one and makes on the equipment (not shown) of pole swing.This optical gate is used to pre-sputter, so that eliminate the pollution on the target, when device this pollution when coating is deposited between the space of substrate idle running may be condensate on the surface of target.
As shown in Figure 4, magnetron assembly 12 comprises a target bearing 36, and it has a chamber 37 and a target material 40 that is surrounded by wall 38.The central authorities of chamber 36 are common magnet 41, and they carry out water cooling by the circulating water flow by pipeline 42 and 43.Cool off by bearing fixed metal target material 40 also water.The house steward 44 who separates slightly with bearing 36 and seal with isolator 45 is connected with the source of supply of working gas 16 by conduit 17 (see figure 3)s, and this house steward can make gas flow around the top of bearing and on metal target material 40 fully.House steward 44 has the basic opening 51 identical with metal target scantling, so that allow the target material of sputter and working gas penetrate (representing with line 34).This magnetron can have been bought from the Material Sciences of Boulder of Colorado, and diameter generally is the 6-8 inch, has high strength magnet.
When recognizing that the present invention has in the constraint that is not subjected to IBS or other known technology when producing very high-quality thin film coating ability by magnetron sputtering, will appreciate that also the present invention is one of a relative prior art very much progress.
The above-mentioned size and the pressure of present embodiment---16 inches projection stroke distances, the sun and planet gear of 15 inch diameters, the substrate of 15 inches or following diameter, and from the top of ion gun to sun and planet gear, be accompanied by 2 * 10
-5Torr to 1.5 * 10
-4Low-down reaction gas pressure in the torr scope and 5 * 10
-5Torr to 2 * 10
-420 inches strokes of the low-down inert gas pressure in the torr scope---also demonstrate the huge difference of the present invention and prior art.
The speed of passing through of passing through speed and the traditional IBS system that is used for making laser quality speculum of preferred embodiment of the present invention is compared:
| The present invention | IBS | |
| Coating speed | 2-5 /second | 2-1 /second |
| Chip area | The 800-1200 inch 2 | The 50-100 inch 2 |
Can see from above, of the present inventionly pass through fast 20 to 120 times of speed than traditional IBS system by speed.Coating is the function of coating speed and chip area by speed.
In addition, method of the present invention can be easily the size of multiplying arrangement in proportion.Above-mentioned all sizes can increase at least 2 times easily, so that be that 30 inches or the coating of bigger optical base-substrate have good conforming laser quality low-loss coating to diameter.Bi-directional scaling is a kind of simple linear result.Bigger system uses bigger magnetron and more processing gas (for example, argon).Vacuum pump also needs correspondingly to increase, to adapt to bigger chamber and to increase the processing air-flow.
Like this, as mentioned above, the present invention can be manufactured on the diameter (for example) laser quality speculum than the big manyfold of existing IBS system manufacturing.
16 inches long stroke of preferred embodiment of the present invention and high and low chamber pressure will allow two or more materials by deposit concurrently, to form the high optics film of being made up of material blends.Fig. 5 has shown two sources 11 li of vacuum chambers---magnetron assembly 12 and magnetron assembly 12a, with the example (indexing other all labels identical with Fig. 3 with use are in order to simplify the description here under the source that increases) as multi-source.
By controlling the watt level that can control each source of deposition speed effectively, available two or more mixtures of material form the coating of selected specific refractory power.This mixture spreads all over coating equably, and forming the film that specific refractory power is determined, or uneven, thereby the composition of coating and then its specific refractory power change concerning whole film.A kind of inhomogeneous film of common format is called as " creasy " wave filter, and wherein, specific refractory power changes in the sinusoidal curve mode, and it has the narrow trap speculum effect of formation.
In order to make this multi-source system keep low pressure, pumping speed must probably increase by 1 times for two parallel deposit sources, or pumping speed must probably increase N-1 doubly for N source.For those skilled in the art, increasing pumping speed will be a simple practice, generally comprise the size of increase pump or provide more pump to chamber.Yet, in fact, owing to be synergetic,, like this, the source can be made less size, so that the use less gas so provide power with the identical size of power that is used for single source to keep coating speed needn't for two parallel sources from the speed in source.
Can be used for another kind of device of the present invention and be having bought from the Advanced Energy ofBoulder of Colorado, trade mark is the arc reduction electronic installation of SPARC-LE.In Fig. 3, the SPARC-LE 46 that carries direct supply 48 is connected with magnetron assembly 12 by cable 47.In Fig. 4, SPARC-LE 46 similarly is connected with 12a with two magnetron assemblies 12.This device helps to reduce arcing, but is not that method and apparatus of the present invention is necessary.
Can see that from the above this magnetron system carries out work under very low pressure.The chamber pressure of rare gas element will be the function of magnetron pressure.Most important part of the present invention is, as shown in Figure 4, and low total pressure district 50 (A+O
2) always be significantly less than higher argon pressure district 52.
Pressure in the chamber can utilize known pressure-flow equation formula to obtain (seeing Leybold product and technical manual 18-5 page or leaf, version in 1993):
P
C=F
Ar/C
P
P
M=F
Ar/C
M+P
C
Wherein: P
CBe the pressure in the chamber;
F
ArIt is the argon flow amount that (passing through magnetron) enters chamber;
C
PIt is the conductivity (chamber pumping speed) of high-vacuum pump;
P
MBe the pressure in the magnetron;
C
MBe in the conductivity (the constraint efficient of magnetron) at magnetron place because gas retrains.
By converting, chamber pressure can be write as:
P
C=P
M/(C
P/C
M+1)
This is an important relational expression, because it demonstrates the pumping speed (C that pressure in the chamber depends on chamber
P).It also demonstrates, if the pumping speed of chamber is low, the pressure in the chamber will be substantially equal to the pressure in the magnetron so.The system of this low pumping speed type has been well-known in prior art, wherein, a throttling valve is set in the front of pump, to reduce pumping speed.See the gloomy and Kern's of above-mentioned good fortune the 156th page of book.Yet if the pumping speed in the chamber is big, as described in the present invention, chamber pressure is with respect to magnetron pressure step-down so.
Utilize aforesaid equation, can determine chamber pressure any new chamber shown in Fig. 6 and 7, known pumping speed.Know demonstration as accompanying drawing, can obtain any suitable desired pressure by the pumping speed that increases chamber.If be reduced in the inert gas pressure (magnetron to some type is possible) of working in the magnetron, so whole pressure curve is with corresponding reduction.This can find out that wherein, the relative magnetron pressure of the curve among Fig. 6 is 0.7 micron and magnetron assembly conductivity (C by the pressure curve of comparison diagram 6 and Fig. 7
M) be 3000 liters/second, and the relative magnetron pressure of the curve among Fig. 7 is 0.4 micron and magnetron assembly conductivity (C
M) be 3000 liters/second.The pumping speed that X-coordinate shows is attainable fully-one for example, and the speed of normally used 20 inches diffusion pump reaches 17500 liters/second, and the speed of 32 inches diffusion pump reaches 32000 liters/second.
Can see from top discussion, under the situation that does not exceed true scope of the present invention and spirit, can make many replenishing and improvement here the optics multiple-pass unit of describing in detail.And all these improvement and additional will the covering by following claims.
Claims (11)
- A deposit sputtering particle on a substrate, to form the method for low-consumption optical coating, it may further comprise the steps:Substrate is placed in the vacuum chamber, and this vacuum chamber has the magnetron and the source of a sputtering particle, and the rare gas element baffle plate that partly hides magnetron, and described substrate has towards throwing the surface in the described source of stroke distances apart than length with it;Make magnetron work, on substrate surface, to apply, also comprise rare gas element is guided to described baffle plate from described source sputtering particle;Extract rapidly and the minimizing rare gas element from vacuum chamber with the high-speed high-vacuum pump; AndMake ionized reactant gases alignment substrate surface, so that the reaction coating, thereby the low-consumption optical coating formed at substrate surface.
- 2. the method for claim 1 is characterized in that, the projection stroke distances between described source and the substrate is 20 inches at least.
- 3. the method for claim 1 is characterized in that, described source is a mix source, and the mixture sputtering particle is deposited on the described substrate.
- 4. the method for claim 1 is characterized in that, also comprises to a plurality of sputtering particles so that be deposited on the step that described on-chip source provides a plurality of magnetrons.
- 5. the method for claim 1 is characterized in that, also comprises the step that substrate is rotated relative to described chamber.
- 6. the method for claim 1 is characterized in that, the inert gas pressure in chamber is maintained at less than 2.0 * 10 -4Torr is greater than 5 * 10 -5In the scope of torr.
- 7. the method for claim 1 is characterized in that, described substrate surface is positioned on the fixed position of transverse runout magnetron in the vacuum chamber.
- 8. one kind forms the device of coating by magnetron sputtering on a substrate surface, comprising:One vacuum chamber wherein has the magnetron system;Target material in the magnetron system is used for forming sputtering particle;The guiding rare gas element is near the equipment the target material;Make the pressure in the chamber maintain 5 * 10 -5Torr to 2.0 * 10 -4Equipment in the torr scope;Guide the equipment of ionized reactant gases towards substrate surface; AndThe substrate position determining equipment, it is positioned in the chamber, with the long distance of target material at interval, thus, fly from target material to substrate at least 12 inches longer mean free path of sputtering particle.
- 9. device as claimed in claim 8 is characterized in that, guides the equipment of ionized reactant gases to comprise an ion gun.
- 10. device as claimed in claim 8 is characterized in that a house steward partly surrounds the magnetron system, and has and enter vacuum chamber and towards the opening of substrate.
- 11. device as claimed in claim 8 is characterized in that, comprises that also an electric arc reduces equipment.
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| CN 96180323 CN1222204A (en) | 1996-06-10 | 1996-06-10 | Reactive magnetron sputtering appts. and method |
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1996
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100347115C (en) * | 2004-08-17 | 2007-11-07 | 应用材料有限责任与两合公司 | Holding device for a screen |
| CN101410931B (en) * | 2006-03-28 | 2011-02-16 | 贝卡尔特股份有限公司 | Coating apparatus |
| CN112522670A (en) * | 2019-09-19 | 2021-03-19 | 湖南普莱思迈电子科技有限公司 | Radio frequency method of plasma power supply |
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