CN1162741C - Ion gun deposit for liquid crystal device and arrangement - Google Patents

Ion gun deposit for liquid crystal device and arrangement Download PDF

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Publication number
CN1162741C
CN1162741C CNB01121869XA CN01121869A CN1162741C CN 1162741 C CN1162741 C CN 1162741C CN B01121869X A CNB01121869X A CN B01121869XA CN 01121869 A CN01121869 A CN 01121869A CN 1162741 C CN1162741 C CN 1162741C
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China
Prior art keywords
ion beam
film
substrate
ion
incident angle
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Expired - Fee Related
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CNB01121869XA
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CN1340733A (en
Inventor
A・卡尔勒加里
A·卡尔勒加里
鹿里
P·肖德哈里
多勒
J·P·多勒
加里干
E·A·加里干
峰
加藤喜峰
拉塞伊
J·A·拉塞伊
A・利恩
S·C·A·利恩
毅
陆珉华
修一
中野宏毅
小田原修一
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International Business Machines Corp
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International Business Machines Corp
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/3442—Applying energy to the substrate during sputtering using an ion beam
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • C23C14/5833—Ion beam bombardment
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133734—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by obliquely evaporated films, e.g. Si or SiO2 films
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/13378—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Liquid Crystal (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention includes a method of forming an aligned film on a substrate. The film is deposited and aligned in a single step by a method comprising the step of bombarding a substrate with an ion beam at a designated incident angle to simultaneously (a) deposit the film onto the substrate and (b) arrange an atomic structure of the film in at least one predetermined aligned direction.

Description

Be used for the ion gun deposit and the arrangement of liquid-crystal apparatus
Technical field
The present invention relates to the method that a kind of formation has the hyaline membrane of aiming at atomic structure.More specifically say, the present invention relates to a kind of method of aiming at hyaline membrane that is formed on deposit and arrangement in the step.
Background technology
Liquid crystal molecule arrangement from the teeth outwards is to make one of important step of LCD.The method that produces the industrial widespread use of this arrangement is the mechanical lapping polyimide surface.This method needs roll squeezer or brush to contact with polyimide surface physics.Grinding technics can be arranged the surface of polyimide again, and then, this surface is as the alignment template of liquid crystal molecule in the preferred orientations orientation.
This method has many shortcomings.For example,, can produce fragment during the grinding, cause poor efficiency because Ginding process is a contact technique.In addition, generally need additional cleaning step to remove these fragments.In addition, because roll squeezer or brush grind the surface of display, can take place electrostatic charges accumulatedly, this accumulation can pass through thin film transistor (TFT) (TFT) discharge, causes the rate decline that manufactures a finished product.In addition, grinding technics needs softer layer, so that change the surface in the direction of needs.So, be applicable to that the selection of material of grinding technics is limited.
People's such as Callegari United States Patent (USP) 5770826 has been introduced the application of low energy ion beam aspect the arrangement of the surface of liquid-crystal apparatus, and it is for referencial use to introduce the document here.In this case, by different independent technology the alignment of institute's deposit is arranged.Although finding has many surfaces to be applicable to the arrangement of ion beam technology, the document is not taught in deposit and alignment layer in the step.
One of main drive in the liquid crystal industry is the continuous decline of production cost.Wiping the arrangement polyimide layer by mechanical lapping/brush or utilizing the ion beam of introducing in the United States Patent (USP) of before having quoted 5770826 to arrange in the process of each layer, alignment must apply before alignment problem.Thereby additional expense has been introduced in deposit alignment and the arrangement of alignment subsequently in the processing step that separates in manufacturing process.The applicant finds that deposit of this layer and arrangement can be finished, and can obviously reduce manufacturing cost in a step.
Summary of the invention
The present invention includes a kind of method that forms film on substrate, wherein said film presents aims at atomic structure.This method may further comprise the steps: with the incident angle of appointment, use at least a ion beam from least a ion beam source, bombard said substrate, so that while (a) said film of deposit on said substrate, (b) the said atomic structure of the said film of arrangement at least one predetermined arrangement direction.
The method according to this invention is dry method deposit and permutation technology, wet processing before and after can avoiding.This method still is contactless deposit and permutation technology, can reduce since the external fragment that for example existing contact grinding technique runs into through regular meeting to the probability of surface contamination.
Therefore, the invention provides the method for the simple and high performance price ratio of the aligning film that a kind of easy formation processed, on said film, can arrange the liquid crystal that is used for wide viewing angle LCD.
Description of drawings
Fig. 1 is the diagrammatic sketch of ion beam source.
Fig. 2 is the geometric relationship of ion gun and substrate, and wherein θ is an incident angle.
Fig. 3 is the diagrammatic sketch that utilizes the embodiment of stationary substrate.
Fig. 4 is the diagrammatic sketch that utilizes the embodiment of mobile substrate.
Fig. 5 utilizes two ion guns to obtain the diagrammatic sketch of the embodiment of aligning film on mobile substrate.
Fig. 6 is the diagrammatic sketch that adopts the embodiment of two ion guns, and the aligning film on the wherein mobile substrate obtains by sputtering deposit and direct the arrangement.
Fig. 7 shows and adopts an ionogenic embodiment, and the aligning film on the wherein mobile substrate is to utilize collimator to obtain.
Embodiment
The present invention relates to a kind ofly by utilizing Ion Beam Treatment, the deposit and the arrangement of alignment is combined into a step, in a step, on substrate, form the method for aligning film.
Term " aligning film " is meant the wherein atom or the molecular structure of film, or film with predetermined direction or orientation of the atom of film or molecular surface structure.According to the present invention, by using ion beam, the deposit aligning film, and at the atom or the molecular structure of the direction alignment film of at least one requirement.
Referring to Fig. 1, the figure shows ion beam source.By gas access 1, carbonaceous gas better is a hydrocarbon gas, and for example methane is incorporated in the plasma chamber 2, i.e. the arc chamber of ion beam source.
Carbonaceous gas can at random mix with for example inert gas such as argon or nitrogen, so that argon and/or nitrogen etc. can be introduced into arc chamber with nytron gas.In arc chamber,, produce the ion beam 4 that comprises atom and ion, by adding accelerating potential, will quicken then from ionogenic atom and ion with this gas ionization.Sizable voltage is added on the ion beam 4, to quicken atom and the ion from ion beam source.
For example, closely be provided for along the path of ion beam 4 intrafascicular and electron source 3, this ion beam is used to neutralize.Neutralization also can utilize across ionogenic tungsten or tantalum wire to be finished.Because the electronics neutralization that utilizes electron source 3 to restraint, outside deionization and the atom, ion beam can also comprise neutral molecule.
The energy of bump material remains below a level, is clean deposit so that leave clean accumulation on the substrate surface.The energy of deposition substance must be lower than permission deposit alignment energy needed on substrate.If can not satisfy this condition, then the result will be clean corrosion, or not be clean deposit at least.
In these experiments, use the carbon energy that is lower than 500eV.Ion beam better is the energy with about 100-500eV.Yet, also can adopt higher energy, as long as can satisfy condition discussed above.
Deposition rate is the adhesive rate of institute's deposition substance and the substrate surface place function as the incident atoms number of the function of time.The deposition rate of film can be exposed to the time of ion beam or change the two control simultaneously by change ion current density, surface.
The incident angle of deposit anakinetomer, the appointment incident angle that promptly is used to bombard also can be controlled the alignment characteristics of institute's deposited film.
Referring to Fig. 2, Fig. 2 shows the geometric relationship of ion gun with respect to substrate 11, and wherein θ is an incident angle, and this angle is an appointment incident angle of utilizing ion beam 4 bombardments.This incident angle better is about 70 degree of about 10-.More preferred, this incident angle is about 25-60 degree.
Deposit and arrangement can be finished under static state or dynamic operation mode.As shown in Figure 3, during the technology, substrate 11 can be maintained fixed with respect to the ion gun 10 that produces ion beam 4, and perhaps, as shown in Figure 4, during the technology, substrate 11 can move in direction shown in the arrow along X-axis with respect to ion gun 10, so that by ion beam bombardment.These embodiment can cause the deposit of the alignment of LCD device.
Fig. 5 shows and utilizes an above ion gun, and promptly two ion guns obtain the embodiment of aligning film on mobile substrate.
Among this embodiment, form alignment with two ion guns.First ion gun, promptly deposit ion gun 20 better is vertical or almost vertical orientated with respect to substrate 11.Second ion gun is promptly arranged ion gun 21 and is oriented to and makes ion beam form angle θ with respect to substrate, as shown in Figure 5.The appointment incident angle that better is first ion beam is different with the appointment incident angle of said second ion beam.In general, the angle between the substrate and second ion gun is about 60 degree of about 25-.Better adopt about 35 degree angle alignment films.
In general, during the technology, substrate 11 moves with respect to ion gun 20 and 21 in direction shown in the arrow along X-axis, so that substrate 11 is by ion beam bombardment.Yet according to moving of substrate or ion beam source, the appointment incident angle that is used for deposit and arrangement can change in time.
Below listed other typical but non-limiting parameter:
The deposit rifle:
Air-flow: CH 4: 6sccm
Ar： 3sccm
Working pressure: 5 * 10 -2Pa
Beam energy: 300eV
Beam current: 50mA
Arrange rifle:
Air-flow: Ar:14sccm
Working pressure: 5 * 10 -2Pa
Beam energy: 200eV
Beam current: 100mA
Fig. 6 shows the embodiment that uses two ion guns, and the aligning film on the wherein mobile substrate is to obtain by sputtering deposit and direct combination of arranging.
Plasma sputter rifle 30 points to sputter material target 32, and then this target is bombarded by atom and ion from the plasma sputter rifle, thereby material is transferred on the substrate from target.
Target can be a carbon, but is not limited to carbon.Wish that very this film is transparent in visible spectrum.Therefore, preferred class Buddha's warrior attendant carbon film.
Angle between target and substrate better is the 30-60 degree.The running parameter of arranging rifle is similar to the above.Arrange 31 pairs of these films of rifle and implement the arrangement of hope, and give the structure that this film is wished.During the technology, substrate 11 can move with respect to sputter material target 32 and ion gun 31 in direction shown in the arrow along X-axis, so that substrate 11 can be by sputter bundle and ion beam bombardment.
Fig. 7 shows the embodiment that utilizes single ion gun 40, wherein the aligning film on the substrate 11 be utilize better be the collimator 41 that constitutes by carbon promptly " honeycomb " collimator obtain.As mentioned above, during deposit and arranging, substrate 11 can move with respect to ion beam source in direction shown in the arrow along X-axis within a certain period of time.
Among this embodiment, collimator 41 is arranged on the path of incident ion bundle, and the incident ion bundle comprises ion and atom.The part of incident anakinetomer will be at forward sputter collimator, and this will cause the clean deposit of film on the surface of substrate 11, and the ion beam that simultaneously, pass collimator, comprises ion and atom is arranged the layer of institute's deposit in this same step.
Utilization uses the liquid crystal cells of the film manufacturing of ion gun deposit and arrangement to show excellent contrast by method of the present invention.Following parameter is adopted in deposit and arrangement:
Air-flow: CH 4: 10sccm
Ar： 1.5sccm
Working pressure: 5 * 10 -2Pa
Beam energy: 200eV
Beam current: 100mA
The pre-tilt angle of surveying is 4 degree in this case, just in time in manufacturing the needed scope of display unit.
In addition, the applicant finds that when manufacturing display unit, alignment prepared in accordance with the present invention has enough grappling energy (anchoring energies).
The grappling energy is defined as the energy how description adjusts to liquid crystal orientation the orientation of alignment well.Orientation in this case is the projecting direction of ion direct of travel on the alignment surface.The grappling energy is high more, liquid crystal orientation can be adjusted to more near orientation.
For most LCD, need high grappling energy, so that obtain the good optical performance.The grinding polyimide film that is used for present LCD generally has 1.0 * 10 -3The grappling energy that N/m is above is thought very strong grappling.On the contrary, contactless ranking method generally has the grappling energy that is lower than the grinding polyimide.Alignment prepared in accordance with the present invention unexpectedly produces 1.0 * 10 -3The grappling energy that N/m is above.Show that alignment that the inventive method provides is at least with to grind polyimide layer the same good.
The invention provides a kind of easy formation and can arrange liquid crystal is applicable to the flat board of wide viewing angle LCD with formation the method for simple and high performance price ratio of processing aligning film on it.
Although discuss in the coupled ion source, in certain embodiments, can adopt the technology of writing direct, make ion beam directly facing to the zone of wishing, have the film of aiming at atomic structure with formation.
Abovely introduced the present invention in conjunction with specific embodiment.Should be understood that under the situation that does not deviate from spirit and scope of the invention, the those skilled in the art can propose various changes and modifications.Therefore, the present invention will comprise that all fall into this in the appended claims scope and substitute, improve and change.

Claims (18)

1. method that on substrate, forms film, wherein said film presents aims at atomic structure, and said method may further comprise the steps:
Use at least a ion beam,, bombard said substrate, so that while (a) said film of deposit on said substrate (b) at least one predetermined arrangement direction, is arranged the said atomic structure of said film with predetermined incident angle from least a ion beam source;
Wherein said ion beam comprises the bump material, and the energy of wherein said bump material keeps below the energy that the said film of deposit needs on the surface of said substrate.
2. according to the process of claim 1 wherein that said predetermined incident angle is about 70 degree of about 10-.
3. according to the method for claim 2, wherein said predetermined incident angle is about 60 degree of about 25-.
4. according to the process of claim 1 wherein that said ion beam is produced by the technology that may further comprise the steps:
Arc chamber to ion beam source is introduced carbonaceous gas;
At the said carbonaceous gas of said arc chamber internal ionization, produce the ion beam that comprises atom and ion; And
Be the enough high voltages of said ion beam supply, to quicken said atom and ion from said ion beam source.
5. according to claim 4 method, wherein said ion beam has the energy from about 100-500eV.
6. according to the process of claim 1 wherein that said ion beam utilizes ion gun to produce.
7. according to the process of claim 1 wherein that said ion beam also comprises neutral molecule.
8. utilize first ion beam and second ion beam to carry out said bombardment according to the process of claim 1 wherein.
9. method according to Claim 8, the said predetermined incident angle of wherein said first ion beam is different from the predetermined incident angle of said second ion beam.
10. according to the process of claim 1 wherein that said predetermined incident angle changes in time.
11. according to the process of claim 1 wherein that said film is transparent in visible spectrum.
12. according to the process of claim 1 wherein that said film is a diamond-like carbon film.
13., further comprising the steps of according to the method for claim 1:
On the path of said ion beam, collimator is set.
14., further comprising the steps of according to the method for claim 1:
Said substrate or said ion beam source are moved each other.
15. a method that forms film on substrate, wherein said film presents aims at atomic structure, and said method may further comprise the steps:
With predetermined incident angle, bombardment is arranged at from the collimator between said substrate and said ion beam source in the ion beam path of ion beam source, so that the material of the said collimator of sputter on said substrate, and while (a) said film of deposit on said substrate, (b) at least one predetermined arrangement direction, arrange the said atomic structure of said film.
16. according to the method for claim 15, wherein said collimator is made of material with carbon element.
17. a method that forms film on substrate, wherein said film presents aims at atomic structure, and said method may further comprise the steps:
Arc chamber to ion beam source is introduced carbonaceous gas;
Said carbonaceous gas in the said arc chamber of ionization produces the ion beam that comprises atom and ion;
Add enough voltage for said ion beam, so that quicken from said ionogenic said atom and ion; And
With predetermined incident angle, use from the said substrate of at least one ionogenic at least a ion beam bombardment, so that (a) the said film of deposit on said substrate (b) at least one predetermined arrangement direction, is arranged the said atomic structure of said film.
18. one kind has the film of aiming at the atomic structure characteristic, utilizes the method for claim 1 preparation.
CNB01121869XA 2000-06-30 2001-06-29 Ion gun deposit for liquid crystal device and arrangement Expired - Fee Related CN1162741C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/608798 2000-06-30
US09/608,798 US6632483B1 (en) 2000-06-30 2000-06-30 Ion gun deposition and alignment for liquid-crystal applications

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Publication Number Publication Date
CN1340733A CN1340733A (en) 2002-03-20
CN1162741C true CN1162741C (en) 2004-08-18

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JP (1) JP2002062532A (en)
KR (1) KR100492681B1 (en)
CN (1) CN1162741C (en)
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JP4485027B2 (en) * 2000-07-28 2010-06-16 エーユー オプトロニクス コーポレイション Liquid crystal device, liquid crystal device manufacturing apparatus, liquid crystal device manufacturing method and alignment film forming method
TW531773B (en) * 2002-02-08 2003-05-11 Au Optronics Corp Equipment for alignment film manufacturing
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US6632483B1 (en) 2003-10-14
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