CN101539686B - Manufacturing method of liquid crystal alignment layer - Google Patents
Manufacturing method of liquid crystal alignment layer Download PDFInfo
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- CN101539686B CN101539686B CN2008101024807A CN200810102480A CN101539686B CN 101539686 B CN101539686 B CN 101539686B CN 2008101024807 A CN2008101024807 A CN 2008101024807A CN 200810102480 A CN200810102480 A CN 200810102480A CN 101539686 B CN101539686 B CN 101539686B
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Abstract
The invention discloses a manufacturing method of a liquid crystal alignment layer. The method comprises the following steps: (1) a deposition bin is arranged, and a glass substrate and a gas distributor are respectively arranged at both sides of the deposition bin; (2) the deposition bin is vacuumized; (3) the glass substrate is heated to the required temperature; (4) the deposition bin is filled with hydrocarbon gas and inert gas; (5) high frequency voltage is applied to the glass substrate and the gas distributor, the gas reacts under the action of the electric field and under the condition of gas pressure, and an alignment film is formed on the surface of the glass substrate; and (6) the bombarding is performed to the alignment film through an ion gun to form an alignment groove, so that a liquid crystal alignment layer is formed. The invention also discloses a manufacturing method of the other kind of liquid crystal alignment layer, and the alignment film is formed by a sputtering method and then is bombarded through the ion gun to form an alignment groove, so that a liquid crystal alignment layer is formed. The invention enables the alignment of the liquid crystal alignment layers to be more consistent to further improve the display quality of the liquid crystal display; and in addition, the manufacturing cost can be also reduced.
Description
Technical field
The present invention relates to LCD Technology, particularly a kind of method for making of liquid crystal aligning layer.
Background technology
LCD is except that other ingredient such as Polarizer, glass substrate, also comprise a liquid crystal layer, the orientation behavior of this liquid crystal layer has determined most of optical characteristics of described LCD, and this orientation determines that by the oriented layer that contacts with this liquid crystal layer described oriented layer is also referred to as liquid crystal aligning layer.This liquid crystal aligning layer can promptly arrange liquid crystal molecule for the liquid crystal molecule that approaches the liquid crystal layer surface provides a pre-dumping angle in its surface along specific direction orientation.
At present, the general manufacturing process of liquid crystal aligning layer is:
(1) on the upper and lower substrate of LCD, all applies orientation liquid earlier.As shown in Figure 1, common orientation liquid coating processes adopts the transfer printing mode, orientation liquid is sprayed onto on the equal liquid roller 120 by nozzle 110, under all liquid roller 120 and squeezer roll 130 act in relative rotation, orientation liquid is pressed into certain thickness equably, afterwards, along with the rotation of print roller 140, all the orientation liquid on the liquid roller 120 is coated on the rubber transfer plate 150 of print roller 140 surface coverage equably.Behind glass substrate 160 access arrangements, be loaded with the equipment base station translation forward of glass substrate 160, and print roller 140 is rotated synchronously, thereby the orientation liquid on the rubber transfer plate 150 just is applied to glass substrate 160 surfaces, thereby finished the coating procedure of orientation liquid, on glass substrate 160, formed alignment films.
(2) then the upper and lower substrate that is coated with orientation liquid is carried out rubbing, to obtain orientation slots by the rubbing action between friction fabric and the substrate.As shown in Figure 2, traditional orientation slots forms the rubbing mode that adopts, friction fabric 170 is secured at friction roller 180 surfaces, the running of the rotating band kinetic friction fabric 170 of friction roller 180, behind glass substrate 160 access arrangements that are coated with orientation liquid, 160 translations forward of base station bearing glass substrate, friction fabric 170 is with after glass substrate 160 contacts, base station continues translation forward, friction roller 180 drives friction fabric 170 high speed rotations, thereby on the orientation liquid on glass substrate 160 surfaces, rub out a series of groove, promptly form orientation slots.For eliminating frictional static generally, also to go Electrostatic Treatment, so far promptly on glass substrate 160, formed liquid crystal aligning layer.
In above-mentioned manufacturing process, there is following problem:
(1) owing to is to form orientation slots in the friction process with friction fabric and glass substrate friction, and the surface state that friction is weaved cotton cloth is difficult to control, the orientation inequality that causes orientation slots easily, thereby cause the pre-dumping angle of liquid crystal molecule also inconsistent, and the pre-dumping angle of liquid crystal molecule is extremely important to the display characteristic of LCD;
(2) friction of friction fabric and glass substrate can bring the problem of friction foreign matter and various picture quality bad (mura), and these problems all can influence the display characteristic of LCD;
(3) in the above-mentioned manufacturing process, alignment films is that the orientation liquid by liquid state forms, thereby need be cured processing to it, specifically needs through precuring and mainly solidifies two flow processs, and is consuming time long.
At problems such as the orientation inequality that exists in this manufacturing process, friction foreign matter and mura, the insider provides many solutions, for example Chinese patent application number is to have mentioned some solutions respectively in 03142948.3,200310114974.4,200510067240.4 the application documents, but these methods just simply improve on the basis of existing equipment or technology, and can not solve problem in the conventional art fully, even can increase technological process, and then increase cost of manufacture.
Summary of the invention
In view of this, fundamental purpose of the present invention is to provide a kind of method for making of liquid crystal aligning layer, makes the orientation of liquid crystal aligning layer more consistent, and then improves the display quality of LCD; And, can reduce manufacturing cost.
For achieving the above object, technical scheme of the present invention is achieved in that
A kind of method for making of liquid crystal aligning layer, it may further comprise the steps:
(1) the deposition storehouse is set, is respectively equipped with glass substrate and gas distributor in the both sides in deposition storehouse;
(2) should deposit the storehouse and be evacuated to vacuum state;
(3) glass substrate is to temperature required;
(4) in this deposition storehouse, inject hydrocarbon gas and inert gas;
(5) glass substrate and gas distributor are applied HF voltage, hydrocarbon gas and inert gas react under electric field action and certain gas pressure condition, form alignment films on the surface of glass substrate;
(6) adopt the ion gun that has certain relative angle and oblique drift angle degree with glass substrate, the alignment films of glass baseplate surface is carried out the ion bombardment, on alignment films, form orientation slots, thereby form liquid crystal aligning layer.
Preferably, in the step (1), glass substrate is located at the anode-side in deposition storehouse, and gas distributor is located at the cathode side in deposition storehouse.
In the step (2), the vacuum tightness of this vacuum state is 10
-6～10
-7Torr.
In the step (3), the temperature of glass substrate is 300～450 ℃.
In the step (4), hydrocarbon gas is H
2And CH
4, and H
2With CH
4Throughput ratio be 50～250.Particularly, H
2Flow be 50～500sccm, CH
4Flow be 0.2～10sccm.
In the step (5), the power of HF voltage is 5～20MHz, and more preferably, the power of HF voltage is 10～15MHz.
In the step (5), gaseous tension is 50 * 10
2～500 * 10
2Pa, more preferably, gaseous tension is 100 * 10
2～450 * 10
2Pa.
In the step (6), ion gun carries out the ion bombardment from the height of distance glass substrate 10～25cm to the alignment films of glass baseplate surface.
In the step (6), relative angle depends on the anglec of rotation of liquid crystal molecule, and tiltedly the drift angle degree depends on the pre-dumping angle of liquid crystal molecule.
In the step (6), relative angle is 40～45 °; Tiltedly the drift angle degree is 3～7 °, and more preferably, tiltedly the drift angle degree is 4～5 °.
The method for making of another kind of liquid crystal aligning layer, it may further comprise the steps:
(1) the deposition storehouse is set, the cathode side in the deposition storehouse is provided with target, and the anode-side in the deposition storehouse is provided with glass substrate;
(2) should deposit the storehouse and be evacuated to vacuum state;
(3) inert gas injecting in the deposition storehouse;
(4) this glass substrate and target are applied high direct voltage, under electric field action and certain gas pressure condition, it is carbon atom that target as sputter goes out target atom, is deposited on and forms alignment films on the glass substrate;
(5) adopt the ion gun that has certain relative angle and oblique drift angle degree with glass substrate, the alignment films of glass baseplate surface is carried out the ion bombardment, on alignment films, form orientation slots, thereby form liquid crystal aligning layer.
Preferably, in the step (2), the vacuum tightness of this vacuum state is 10
-6～10
-7Torr.
In the step (4), the voltage of high direct voltage is 1～3kV.
In the step (4), the gaseous tension of inert gas is 50～6000Pa.
In the step (5), ion gun carries out the ion bombardment from the height of distance glass substrate 10～25cm to the alignment films of glass baseplate surface.
In the step (5), relative angle depends on the anglec of rotation of liquid crystal molecule, and tiltedly the drift angle degree depends on the pre-dumping angle of liquid crystal molecule.
In the step (5), relative angle is 40～45 °; Tiltedly the drift angle degree is 3～7 °, and more preferably, tiltedly the drift angle degree is 4～5 °.
As can be seen from the above technical solutions, in the method for making of liquid crystal aligning layer of the present invention, during with ion gun bombardment alignment films, control the bombardment direction of ion gun easily, thereby can make the orientation of orientation slots more consistent, thereby can avoid in the conventional art owing to the uneven bad problem of display characteristic that causes of orientation slots orientation; In addition, the present invention adopts contactless formation orientation slots, has avoided problems such as friction foreign matter that traditional friction process brings and mura; And, the present invention forms alignment films with solid-state C atom, has saved precuring required when using orientation liquid to form alignment films in the traditional handicraft and main curing flow process, thereby has shortened the single products production time greatly (tact time), improve productive rate, reduced manufacturing cost.
Description of drawings
Fig. 1 is the synoptic diagram of orientation liquid coating processes in the prior art;
Fig. 2 is the synoptic diagram that forms orientation slots in the prior art;
Fig. 3 forms the synoptic diagram of alignment films for chemical vapour deposition technique of the present invention;
Fig. 4 forms the synoptic diagram of alignment films for sputtering method of the present invention;
Fig. 5 is the synoptic diagram of the alignment films of carbon atomic layer formation of the present invention;
Fig. 6 forms the synoptic diagram of orientation slots for the present invention adopts ion bombardment mode;
Fig. 7 is the synoptic diagram of the present invention along the orientation slots of A-A line among Fig. 6;
The synoptic diagram that Fig. 8 arranges along orientation slots in order for liquid crystal molecule of the present invention;
Fig. 9 is the synoptic diagram of liquid crystal molecule pre-dumping angle in the A part of Fig. 8;
Figure 10 is the making schematic flow sheet of liquid crystal aligning layer of the present invention;
Figure 11 is another making schematic flow sheet of liquid crystal aligning layer of the present invention.
Embodiment
The present invention is further detailed explanation below in conjunction with accompanying drawing.
The method for making of liquid crystal aligning layer provided by the invention, at first the method by chemical vapor deposition or sputter forms alignment films, with ion gun formed alignment films is carried out the ion bombardment then and forms orientation slots, thereby form liquid crystal aligning layer.
The present invention adopts the making step of chemical vapor deposition formation alignment films as follows:
(11) deposition storehouse 200 is set, as shown in Figure 3, the side in deposition storehouse 200 is provided with pedestal 260, is equipped with glass substrate 270 on the pedestal 260, and opposite side is provided with gas distributor 230, and it is used for gas is evenly distributed in the deposition storehouse 200;
(12) will deposit storehouse 200 by the vent port 250 on the deposition storehouse 200 and be evacuated to vacuum state, its vacuum tightness is 10
-6～10
-7Torr;
(13) utilize glow discharge or other heater glass substrate 270, glass substrate 270 is warmed up to more than 200 ℃, the temperature of glass substrate 270 is regulated according to the difference that adhesion strength, the speed of growth and C atom grain size to liquid crystal aligning layer require, take all factors into consideration each correlative factor, temperature is preferably 300～450 ℃ in the present embodiment.
(14) inject hydrocarbon gas 240 and inert gas such as argon Ar or helium He by the air hole 210 on the deposition storehouse 200 in deposition storehouse 200, wherein, hydrocarbon gas can be H
2And CH
4, H
2With CH
4Throughput ratio be 50～250, H
2Flow specifically be chosen as 50～500sccm, and CH
4Flow specifically be chosen as 0.2～10sccm;
(15) glass substrate 270 and gas distributor 230 are applied HF voltage 220, the power of HF voltage 220 is 5～20MHz, is preferably 10～15MHz, and is 50 * 10 at gaseous tension
2～500 * 10
2Pa is preferably 100 * 10
2～450 * 10
2Under the condition of Pa, hydrocarbon gas 240 and inert gas are through series of chemical and plasma reaction, form alignment films on glass substrate 270 surfaces, the tail gas that produces in the reaction is discharged immediately by vent port 250, also keeps the constant of deposition storehouse 200 internal gas pressures simultaneously.
In this step, the carbon atom film forming procedure can be divided into four-stage:
1) free electron activate:
Free electron in low pressure deposition storehouse 200 quickens under electric field action, with the collision intert-gas atoms, makes it ionization and produces more e
-
2) ionized inert gas:
Ar → Ar
++ e
-Perhaps He → He
++ e
-
This process is mainly the late phase reaction process e is provided
-, e
-Make it that series of chemical take place with the molecular raw material gas collision; Wherein, Ar
+Or He
+Ion quickens e to the input direction of high frequency negative voltage
-Direction to ground connection is quickened;
3) generation of four kinds of intermediates:
The 1st reaction: intermediate generates
CH
4→C+2H
2
The 2nd reaction: intermediate and unstrpped gas reaction
Wherein, in a series of intermediates,
Be the main use composition in the film forming procedure;
4) in glass substrate 270 surface deposition film forming:
Move diffusion to glass substrate 270 surfaces, combine with the C atom on glass substrate 270 surfaces and generate C-CH
3Group, methyl-CH wherein
3Play pendulum, two hydrogen atoms are therefrom separated and are formed H
2(g), reaction equation is as described below:
CH
3→CH+H
2(g)
H
2(g) leave glass substrate 270 surfaces, and CH forms α-C layer at glass substrate 270 surface depositions, promptly forms alignment films.
After deposition plating is finished, can further go Electrostatic Treatment to glass substrate 270.
The present invention adopts the making step of sputtering method formation alignment films as follows:
(21) deposition storehouse 300 is set, the cathode side in deposition storehouse 300 is provided with target 360, and the anode-side in deposition storehouse 300 is provided with pedestal 390, and pedestal 390 is provided with glass substrate 310, as shown in Figure 4;
(22) will deposit storehouse 300 by the vacuum hole 380 on the deposition storehouse 300 and be evacuated to vacuum state, its vacuum tightness is 10
-6～10
-7Torr;
(23) by the air hole 370 on the deposition storehouse 300 inert gas injecting such as argon gas in deposition storehouse 300;
(24) will be loaded with pedestal 390 ground connection of glass substrate 310, apply the negative direct current high voltage of 1～3kV in target 360 sides, and under the condition of the gaseous tension 50～6000Pa of inert gas, it is carbon atom 320 that target 360 sputters target atom, is deposited on the described glass substrate 310 and forms alignment films.
In this step, the carbon atomic layer membrane formation mechanism is as described below: the free electron between target 360 and the pedestal 390 quickens to fly to glass substrate 310 under effect of electric field, in this process, bump with intert-gas atoms such as ar atmo, ionization goes out a large amount of argon ion 330 and electronics 340, and chemical formula is: Ar → Ar
++ e
-Electronics 340 flies to glass substrate 310, argon ion 330 quickens bombardment target 360 under effect of electric field, sputter a large amount of target atom and secondary electron 350, being neutral target atom is that carbon atom 320 is not subjected to effect of electric field and utilizes recoil or sputter, directly also finally deposits on glass substrate 310 to glass substrate 310 surface migrations and forms alignment films.
In addition, secondary electron 350 is subjected to the influence of magnetic field Lorentz force in quickening to fly to the process of glass substrate 310, be bound near in the plasma zone of target surface, plasma density is very high in this zone, secondary electron 350 moves in a circle around target surface under the effect in magnetic field, this electronic motion path is very long, constantly clashes into a large amount of argon ions 330 that ionization goes out in motion process, and ar atmo quickens bombardment target 360.Electronics energy after through bump repeatedly reduces gradually, finally breaks away from the constraint of the magnetic line of force, away from target, is deposited on the glass substrate 310.Therefore, pile up, after deposition plating is finished, glass substrate 310 is gone Electrostatic Treatment for avoiding the static on the glass substrate 310.
As shown in Figure 5, be the alignment films that deposition forms on glass substrate 410 that obtains by chemical vapour deposition technique or sputtering method, this alignment films mainly is made of carbon atom 420.
The present invention carries out the ion bombardment with ion gun to the above-mentioned alignment films that is formed by chemical vapour deposition technique or sputtering method, forms orientation slots, and detailed step is as follows:
As shown in Figure 6, ion gun 510 is from the place of distance glass substrate 410 certain altitudes, be generally 10～25cm, direction with 410 one-tenth certain relative angles 530 of glass substrate, along departing from glass substrate 410 surperficial certain angles is that oblique drift angle degree 540 is 3～7 ° a direction, and the alignment films on glass substrate 410 surfaces is carried out ion 520 bombardments.Wherein, the height between ion gun 510 and the glass substrate 410 is preferably 20cm; Relative angle 530 is the deviation angle on relative glass substrate 410 horizontal directions of certain row orientation slots that ion bombardment forms, it can be as the criterion with the anglec of rotation of liquid crystal molecule in liquid crystal cell, according to symmetry principle and calculating gained, relative angle 530 is 1/2nd of the liquid crystal molecule anglec of rotation, and the anglec of rotation of liquid crystal molecule is generally between 80～90 °, therefore, generally controlling relative angle is between 40～45 °; And tiltedly the pre-dumping angle of drift angle degree 540 liquid crystal molecule that can require with expection is as the criterion, and is preferably 4～5 °.
As shown in Figure 7, carbon atom 420 in the alignment films is pushed through on one side under external world's bombardment acting force and goes, glass substrate 410 along continuous straight runs carry out translation with the specific interval time simultaneously, displacement equals the orientation slots distance at interval in twos, the intensity of ion bombardment and time cross greatly benchmark and regulate not make carbon atom break away from substrate or migration distance, thereby form the orientation slots 430 that series of parallel is arranged at alignment layer surface, so promptly formed liquid crystal aligning layer.
The synoptic diagram that Fig. 8 arranges in order along orientation slots for liquid crystal molecule of the present invention, Fig. 9 be Fig. 8 A partly in the synoptic diagram of liquid crystal molecule pre-dumping angle.Fig. 8, Fig. 9 have schematically illustrated the mode that liquid crystal molecule 440 is arranged in order along orientation slots 430.Because the relation of acting force between affinity effect and molecule, the atom between C atom and the liquid crystal molecule 440, liquid crystal molecule 440 is attached on the alignment films with having directivity, after in case ground floor liquid crystal molecule 440 orientations on the alignment films finish, be subjected to the influence of 440 affinity effects of liquid crystal molecule, liquid crystal molecule 440 just has certain orientation ground and arranges continuously.The central axis direction of liquid crystal molecule 440 tilts obliquely along the direction of orientation slots 430, and angle of inclination 450 is the pre-dumping angle of liquid crystal molecule 440.
To provide specific embodiment below, more clearly to describe the present invention.Wherein, embodiment one to embodiment four forms alignment films with chemical vapour deposition technique; Embodiment five to embodiment eight forms alignment films with sputtering method.
Embodiment one
In the present embodiment, the vacuum tightness in the deposition storehouse 200 is 10
-6Torr, glass substrate 270 are warming up to 300 ℃, H
2Flow be 50sccm, CH
4Flow be 0.2sccm, the power of high frequency negative voltage 220 is 5MHz, gaseous tension is 50 * 10
2Pa; Distance between ion gun 510 and the glass substrate 270 is 10cm, with the relative angle 530 of glass substrate 270 be 40 °, tiltedly drift angle degree 540 is 3 °.
As shown in figure 10, the method for making of liquid crystal aligning layer of the present invention comprises the steps:
(a1) deposition storehouse 200 is set, the anode-side in deposition storehouse 200 is provided with pedestal 260, and pedestal 260 is provided with glass substrate 270, and cathode side is provided with gas distributor 230;
(a2) will deposit storehouse 200 by the vent port 250 on the deposition storehouse 200 and be evacuated to vacuum state, its vacuum tightness is 10
-6Torr;
(a3) utilize glow discharge glass substrate 270, make glass substrate 270 be warming up to 300 ℃;
(a4) in deposition storehouse 200, inject hydrocarbon gas 240 and argon Ar by the air hole 210 on the deposition storehouse 200, wherein, H
2Flow be 50sccm, CH
4Flow be 0.2sccm;
(a5) will be loaded with pedestal 260 ground connection of glass substrate 270, and apply high frequency negative voltage 220 in gas distributor 230 sides, the power of high frequency negative voltage 220 is 5MHz, is 50 * 10 at gaseous tension
2Under the condition of Pa, hydrocarbon gas 240 and Ar are through series of chemical and plasma reaction, α-C the layer that generates forms alignment films at glass substrate 270 surface depositions, the tail gas that produces in the reaction is discharged immediately by vent port 250, after deposition plating is finished, can further go Electrostatic Treatment to glass substrate 270;
(a6) be the height of 10cm with ion gun 510 from distance glass substrate 270, with 270 one-tenth relative angles of glass substrate 530 is 40 ° direction, along departing from glass substrate 270 surfaces is that oblique drift angle degree 540 is 3 ° a direction, the alignment films on glass substrate 270 surfaces is carried out ion 520 bombardments, on alignment films, form orientation slots, thereby form liquid crystal aligning layer.
Embodiment two
In the present embodiment, the vacuum tightness in the deposition storehouse 200 is 10
-7Torr, glass substrate 270 are warming up to 450 ℃, H
2Flow be 500sccm, CH
4Flow be 10sccm, the power of high frequency negative voltage 220 is 20MHz, gaseous tension is 500 * 10
2Pa; Distance between ion gun 510 and the glass substrate 270 is 25cm, with the relative angle 530 of glass substrate 270 be 45 °, tiltedly drift angle degree 540 is 7 °.
The method for making of liquid crystal aligning layer of the present invention comprises the steps:
(b1) deposition storehouse 200 is set, the anode-side in deposition storehouse 200 is provided with pedestal 260, and pedestal 260 is provided with glass substrate 270, and cathode side is provided with gas distributor 230;
(b2) will deposit storehouse 200 by the vent port 250 on the deposition storehouse 200 and be evacuated to vacuum state, its vacuum tightness is 10
-7Torr;
(b3) utilize glow discharge glass substrate 270, make glass substrate 270 be warming up to 450 ℃;
(b4) in deposition storehouse 200, inject hydrocarbon gas 240 and argon Ar by the air hole 210 on the deposition storehouse 200, wherein, H
2Flow be 500sccm, CH
4Flow be 10sccm;
(b5) will be loaded with pedestal 260 ground connection of glass substrate 270, and apply high frequency negative voltage 220 in gas distributor 230 sides, the power of high frequency negative voltage 220 is 20MHz, is 500 * 10 at gaseous tension
2Under the condition of Pa, hydrocarbon gas 240 and Ar are through series of chemical and plasma reaction, α-C the layer that generates forms alignment films at glass substrate 270 surface depositions, the tail gas that produces in the reaction is discharged immediately by vent port 250, after deposition plating is finished, can further go Electrostatic Treatment to glass substrate 270;
(b6) be the height of 25cm with ion gun 510 from distance glass substrate 270, with 270 one-tenth relative angles of glass substrate 530 is 45 ° direction, along departing from glass substrate 270 surfaces is that oblique drift angle degree 540 is 7 ° a direction, the alignment films on glass substrate 270 surfaces is carried out ion 520 bombardments, on alignment films, form orientation slots, thereby form liquid crystal aligning layer.
Embodiment three
In the present embodiment, the vacuum tightness in the deposition storehouse 200 is 10
-6Torr, glass substrate 270 are warming up to 400 ℃, H
2Flow be 250sccm, CH
4Flow be 5sccm, the power of high frequency negative voltage 220 is 10MHz, gaseous tension is 100 * 10
2Pa; Distance between ion gun 510 and the glass substrate 270 is 20cm, with the relative angle 530 of glass substrate 270 be 42.5 °, tiltedly drift angle degree 540 is 4 °.
The method for making of liquid crystal aligning layer of the present invention comprises the steps:
(c1) deposition storehouse 200 is set, the anode-side in deposition storehouse 200 is provided with pedestal 260, and pedestal 260 is provided with glass substrate 270, and cathode side is provided with gas distributor 230;
(c2) will deposit storehouse 200 by the vent port 250 on the deposition storehouse 200 and be evacuated to vacuum state, its vacuum tightness is 10
-6Torr;
(c3) utilize glow discharge glass substrate 270, make glass substrate 270 be warming up to 400 ℃;
(c4) in deposition storehouse 200, inject hydrocarbon gas 240 and argon Ar by the air hole 210 on the deposition storehouse 200, wherein, H
2Flow be 250sccm, CH
4Flow be 5sccm;
(c5) will be loaded with pedestal 260 ground connection of glass substrate 270, and apply high frequency negative voltage 220 in gas distributor 230 sides, the power of high frequency negative voltage 220 is 10MHz, is 100 * 10 at gaseous tension
2Under the condition of Pa, hydrocarbon gas 240 and Ar are through series of chemical and plasma reaction, α-C the layer that generates forms alignment films at glass substrate 270 surface depositions, the tail gas that produces in the reaction is discharged immediately by vent port 250, after deposition plating is finished, can further go Electrostatic Treatment to glass substrate 270;
(c6) be the height of 20cm with ion gun 510 from distance glass substrate 270, with 270 one-tenth relative angles of glass substrate 530 is 42.5 ° direction, along departing from glass substrate 270 surfaces is that oblique drift angle degree 540 is 4 ° a direction, the alignment films on glass substrate 270 surfaces is carried out ion 520 bombardments, on alignment films, form orientation slots, thereby form liquid crystal aligning layer.
Embodiment four
In the present embodiment, the vacuum tightness in the deposition storehouse 200 is 10
-7Torr, glass substrate 270 are warming up to 250 ℃, H
2Flow be 300sccm, CH
4Flow be 3sccm, the power of high frequency negative voltage 220 is 15MHz, gaseous tension is 450 * 10
2Pa; Distance between ion gun 510 and the glass substrate 270 is 20cm, with the relative angle 530 of glass substrate 270 be 42.2 °, tiltedly drift angle degree 540 is 5 °.
The method for making of liquid crystal aligning layer of the present invention comprises the steps:
(d1) deposition storehouse 200 is set, the anode-side in deposition storehouse 200 is provided with pedestal 260, and pedestal 260 is provided with glass substrate 270, and cathode side is provided with gas distributor 230;
(d2) will deposit storehouse 200 by the vent port 250 on the deposition storehouse 200 and be evacuated to vacuum state, its vacuum tightness is 10
-7Torr;
(d3) utilize glow discharge glass substrate 270, make glass substrate 270 be warming up to 250 ℃;
(d4) in deposition storehouse 200, inject hydrocarbon gas 240 and argon Ar by the air hole 210 on the deposition storehouse 200, wherein, H
2Flow be 300sccm, CH
4Flow be 3sccm;
(d5) will be loaded with pedestal 260 ground connection of glass substrate 270, and apply high frequency negative voltage 220 in gas distributor 230 sides, the power of high frequency negative voltage 220 is 15MHz, is 450 * 10 at gaseous tension
2Under the condition of Pa, hydrocarbon gas 240 and Ar are through series of chemical and plasma reaction, α-C the layer that generates forms alignment films at glass substrate 270 surface depositions, the tail gas that produces in the reaction is discharged immediately by vent port 250, after deposition plating is finished, can further go Electrostatic Treatment to glass substrate 270;
(d6) be the height of 20cm with ion gun 510 from distance glass substrate 270, with 270 one-tenth relative angles of glass substrate 530 is 42.2 ° direction, along departing from glass substrate 270 surfaces is that oblique drift angle degree 540 is 5 ° a direction, the alignment films on glass substrate 270 surfaces is carried out ion 520 bombardments, on alignment films, form orientation slots, thereby form liquid crystal aligning layer.
This chemical gaseous phase depositing process has been applied in thin film transistor (TFT)-array (TFT-Array) technology, the deposition plating that is used for grid line, source electrode etc. such as a-Si on the glass substrate, and the equipment of these technologies structure is similar to the applied equipment structure of the present invention, therefore the preparation of these technologies and liquid crystal aligning layer can be combined, to save equipment cost, shortened process.
Embodiment five
In the present embodiment, the vacuum tightness in the deposition storehouse 300 is 10
-6Torr, negative direct current high voltage are 1kV, and the gaseous tension of inert gas is 50Pa; Distance between ion gun 510 and the glass substrate 310 is 10cm, with the relative angle 530 of glass substrate 310 be 40 °, tiltedly drift angle degree 540 is 3 °.
As shown in figure 11, the method for making of the another kind of liquid crystal aligning layer of the present invention comprises the steps:
(1a) deposition storehouse 300 is set, the cathode side in deposition storehouse 300 is provided with target 360, and the anode-side in deposition storehouse 300 is provided with pedestal 390, and pedestal 390 is provided with glass substrate 310;
(1b) will deposit storehouse 300 by the vacuum hole 380 on the deposition storehouse 300 and be evacuated to vacuum state, its vacuum tightness is 10
-6Torr;
(1c) in deposition storehouse 300, inject argon gas by the air hole 370 on the deposition storehouse 300;
(1d) will be loaded with pedestal 390 ground connection of glass substrate 310, apply the negative direct current high voltage of 1kV in target 360 sides, and the gaseous tension at inert gas is under the condition of 50Pa, it is carbon atom 320 that target 360 sputters target atom, it is deposited on the glass substrate 310 and forms alignment films, for avoiding the static on the glass substrate 310 to pile up, after deposition plating is finished, can further go Electrostatic Treatment to glass substrate 310;
Be the height of 10cm from distance glass substrate 310 (1e) with ion gun 510, with 310 one-tenth relative angles of glass substrate 530 is 40 ° direction, along departing from glass substrate 310 surfaces is that oblique drift angle degree 540 is 3 ° a direction, the alignment films on glass substrate 310 surfaces is carried out ion 520 bombardments, on alignment films, form orientation slots, thereby form liquid crystal aligning layer.
Embodiment six
In the present embodiment, the vacuum tightness in the deposition storehouse 300 is 10
-7Torr, negative direct current high voltage are 3kV, and the gaseous tension of inert gas is 6000Pa; Distance between ion gun 510 and the glass substrate 310 is 25cm, with the relative angle 530 of glass substrate 310 be 45 °, tiltedly drift angle degree 540 is 7 °.
The method for making of liquid crystal aligning layer of the present invention comprises the steps:
(2a) deposition storehouse 300 is set, the cathode side in deposition storehouse 300 is provided with target 360, and the anode-side in deposition storehouse 300 is provided with pedestal 390, and pedestal 390 is provided with glass substrate 310;
(2b) will deposit storehouse 300 by the vacuum hole 380 on the deposition storehouse 300 and be evacuated to vacuum state, its vacuum tightness is 10
-7Torr;
(2c) in deposition storehouse 300, inject argon gas by the air hole 370 on the deposition storehouse 300;
(2d) will be loaded with pedestal 390 ground connection of glass substrate 310, apply the negative direct current high voltage of 3kV in target 360 sides, and the gaseous tension at inert gas is under the condition of 6000Pa, it is carbon atom 320 that target 360 sputters target atom, it is deposited on the glass substrate 310 and forms alignment films, for avoiding the static on the glass substrate 310 to pile up, after deposition plating is finished, can further go Electrostatic Treatment to glass substrate 310;
Be the height of 25cm from distance glass substrate 310 (2e) with ion gun 510, with 310 one-tenth relative angles of glass substrate 530 is 45 ° direction, along departing from glass substrate 310 surfaces is that oblique drift angle degree 540 is 7 ° a direction, the alignment films on glass substrate 310 surfaces is carried out ion 520 bombardments, on alignment films, form orientation slots, thereby form liquid crystal aligning layer.
Embodiment seven
In the present embodiment, the vacuum tightness in the deposition storehouse 300 is 10
-6Torr, negative direct current high voltage are 2kV, and the gaseous tension of inert gas is 3000Pa; Distance between ion gun 510 and the glass substrate 310 is 20cm, with the relative angle 530 of glass substrate 310 be 42.5 °, tiltedly drift angle degree 540 is 4 °.
The method for making of liquid crystal aligning layer of the present invention comprises the steps:
(3a) deposition storehouse 300 is set, the cathode side in deposition storehouse 300 is provided with target 360, and the anode-side in deposition storehouse 300 is provided with pedestal 390, and pedestal 390 is provided with glass substrate 310;
(3b) will deposit storehouse 300 by the vacuum hole 380 on the deposition storehouse 300 and be evacuated to vacuum state, its vacuum tightness is 10
-6Torr;
(3c) in deposition storehouse 300, inject argon gas by the air hole 370 on the deposition storehouse 300;
(3d) will be loaded with pedestal 390 ground connection of glass substrate 310, apply the negative direct current high voltage of 2kV in target 360 sides, and the gaseous tension at inert gas is under the condition of 3000Pa, it is carbon atom 320 that target 360 sputters target atom, it is deposited on the glass substrate 310 and forms alignment films, for avoiding the static on the glass substrate 310 to pile up, after deposition plating is finished, can further go Electrostatic Treatment to glass substrate 310;
Be the height of 20cm from distance glass substrate 310 (3e) with ion gun 510, with 310 one-tenth relative angles of glass substrate 530 is 42.5 ° direction, along departing from glass substrate 310 surfaces is that oblique drift angle degree 540 is 4 ° a direction, the alignment films on glass substrate 310 surfaces is carried out ion 520 bombardments, on alignment films, form orientation slots, thereby form liquid crystal aligning layer.
Embodiment eight
In the present embodiment, the vacuum tightness in the deposition storehouse 300 is 10
-7Torr, negative direct current high voltage are 3kV, and the gaseous tension of inert gas is 4000Pa; Distance between ion gun 510 and the glass substrate 310 is 20cm, with the relative angle 530 of glass substrate 310 be 42.2 °, tiltedly drift angle degree 540 is 5 °.
The method for making of liquid crystal aligning layer of the present invention comprises the steps:
(4a) deposition storehouse 300 is set, the cathode side in deposition storehouse 300 is provided with target 360, and the anode-side in deposition storehouse 300 is provided with pedestal 390, and pedestal 390 is provided with glass substrate 310;
(4b) will deposit storehouse 300 by the vacuum hole 380 on the deposition storehouse 300 and be evacuated to vacuum state, its vacuum tightness is 10
-7Torr;
(4c) in deposition storehouse 300, inject argon gas by the air hole 370 on the deposition storehouse 300;
(4d) will be loaded with pedestal 390 ground connection of glass substrate 310, apply the negative direct current high voltage of 3kV in target 360 sides, and the gaseous tension at inert gas is under the condition of 4000Pa, it is carbon atom 320 that target 360 sputters target atom, it is deposited on the glass substrate 310 and forms alignment films, for avoiding the static on the glass substrate 310 to pile up, after deposition plating is finished, can further go Electrostatic Treatment to glass substrate 310;
Be the height of 20cm from distance glass substrate 310 (4e) with ion gun 510, with 310 one-tenth relative angles of glass substrate 530 is 42.2 ° direction, along departing from glass substrate 310 surfaces is that oblique drift angle degree 540 is 5 ° a direction, the alignment films on glass substrate 310 surfaces is carried out ion 520 bombardments, on alignment films, form orientation slots, thereby form liquid crystal aligning layer.
The above is preferred embodiment of the present invention only, is not to be used to limit protection scope of the present invention.
Claims (13)
1. the method for making of a liquid crystal aligning layer is characterized in that, described method for making may further comprise the steps:
1) the deposition storehouse is set, the side in the deposition storehouse is provided with glass substrate, and the opposite side in the deposition storehouse is provided with gas distributor;
(2) described deposition storehouse is evacuated to vacuum state;
(3) glass substrate is to temperature required;
(4) in described deposition storehouse, inject hydrocarbon gas and inert gas;
(5) described glass substrate and gas distributor are applied HF voltage, described hydrocarbon gas and inert gas react under electric field action and certain gas pressure condition, form alignment films on the surface of described glass substrate; Described gaseous tension is 50 * 10
2～500 * 10
2Pa;
(6) adopt the ion gun that has certain relative angle and oblique drift angle degree with described glass substrate, the alignment films of described glass baseplate surface is carried out the ion bombardment, on alignment films, form orientation slots, thereby form liquid crystal aligning layer; Described relative angle is that ion bombards the deviation angle on the relative glass substrate horizontal direction of orientation slots that forms, and described oblique drift angle degree is the pre-dumping angle of the liquid crystal molecule of expection requirement.
2. the method for making of liquid crystal aligning layer according to claim 1 is characterized in that, in the described step (1), described glass substrate is located at the anode-side in deposition storehouse, and described gas distributor is located at the cathode side in deposition storehouse.
3. the method for making of liquid crystal aligning layer according to claim 1 is characterized in that, in the described step (2), the vacuum tightness of described vacuum state is 10
-6～10
-7Torr.
4. the method for making of liquid crystal aligning layer according to claim 1 is characterized in that, in the described step (3), the temperature of described glass substrate is 300～450 ℃.
5. the method for making of liquid crystal aligning layer according to claim 1 is characterized in that, in the described step (4), described hydrocarbon gas is H
2And CH
4, and H
2With CH
4Throughput ratio be H
2: CH
4=50～250.
6. the method for making of liquid crystal aligning layer according to claim 5 is characterized in that, in the described step (4), and described H
2Flow be 50～500sccm, described CH
4Flow be 0.2～10sccm.
7. the method for making of liquid crystal aligning layer according to claim 1 is characterized in that, in the described step (5), the power of described HF voltage is 5～20MHz.
8. the method for making of liquid crystal aligning layer according to claim 7 is characterized in that, in the described step (5), the power of described HF voltage is 10～15MHz.
9. the method for making of liquid crystal aligning layer according to claim 1 is characterized in that, in the described step (5), described gaseous tension is 100 * 10
2～450 * 10
2Pa.
10. the method for making of liquid crystal aligning layer according to claim 1 is characterized in that, in the described step (6), described ion gun carries out the ion bombardment from the height of distance glass substrate 10～25cm to the alignment films of described glass baseplate surface.
11. the method for making of liquid crystal aligning layer according to claim 1 is characterized in that, in the described step (6), described relative angle depends on the anglec of rotation of liquid crystal molecule, and described oblique drift angle degree depends on the pre-dumping angle of liquid crystal molecule.
12. the method for making according to claim 1 or 11 described liquid crystal aligning layers is characterized in that, in the described step (6), described relative angle is 40～45 °, and described oblique drift angle degree is 3～7 °.
13. the method for making of liquid crystal aligning layer according to claim 12 is characterized in that, in the described step (6), described oblique drift angle degree is 4～5 °.
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