CN1220282C - GaN基多量子阱结构及采用该结构的发光二极管 - Google Patents
GaN基多量子阱结构及采用该结构的发光二极管 Download PDFInfo
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- CN1220282C CN1220282C CNB021494827A CN02149482A CN1220282C CN 1220282 C CN1220282 C CN 1220282C CN B021494827 A CNB021494827 A CN B021494827A CN 02149482 A CN02149482 A CN 02149482A CN 1220282 C CN1220282 C CN 1220282C
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Application Number | Priority Date | Filing Date | Title |
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CNB021494827A CN1220282C (zh) | 2002-09-30 | 2002-11-21 | GaN基多量子阱结构及采用该结构的发光二极管 |
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CN02131080 | 2002-09-30 | ||
CN02131080.7 | 2002-09-30 | ||
CNB021494827A CN1220282C (zh) | 2002-09-30 | 2002-11-21 | GaN基多量子阱结构及采用该结构的发光二极管 |
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CN1487604A CN1487604A (zh) | 2004-04-07 |
CN1220282C true CN1220282C (zh) | 2005-09-21 |
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CNB021494827A Expired - Fee Related CN1220282C (zh) | 2002-09-30 | 2002-11-21 | GaN基多量子阱结构及采用该结构的发光二极管 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101540358B (zh) * | 2008-03-19 | 2012-05-30 | 中国科学院半导体研究所 | 宽光谱大功率的半导体超辐射发光二极管的制作方法 |
CN102439740B (zh) * | 2009-03-06 | 2015-01-14 | 李贞勋 | 发光器件 |
CN102185058B (zh) * | 2011-04-02 | 2013-09-25 | 映瑞光电科技(上海)有限公司 | 一种氮化物led结构及其制备方法 |
CN102157647A (zh) * | 2011-05-03 | 2011-08-17 | 映瑞光电科技(上海)有限公司 | 一种氮化物led结构及其制备方法 |
CN102280547A (zh) * | 2011-08-31 | 2011-12-14 | 厦门大学 | 一种有源区为p型的氮化镓系半导体发光管 |
CN104576856A (zh) * | 2015-01-30 | 2015-04-29 | 天津三安光电有限公司 | 带有掺杂的多层量子阱多元化合物半导体高效率发光组件 |
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Owner name: SHANGHAI LANBAO PHOTOELECTRIC MATERIALS CO., LTD. Free format text: FORMER OWNER: INST. OF PHYSICS, CAS Effective date: 20041001 |
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Effective date of registration: 20041001 Address after: 201601 A-5 block, Songjiang science and Technology Park, Shanghai Applicant after: Shanghai Lanbao Photoelectric Materials Co., Ltd. Address before: 100080 No. 8, South Third Street, Haidian District, Beijing, Zhongguancun Applicant before: Research Institute of Physics, Chinese Academy of Sciences |
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Granted publication date: 20050921 Termination date: 20121121 |