CN1215376C - High-temp heat-stream photoetching method - Google Patents
High-temp heat-stream photoetching method Download PDFInfo
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- CN1215376C CN1215376C CN 01101385 CN01101385A CN1215376C CN 1215376 C CN1215376 C CN 1215376C CN 01101385 CN01101385 CN 01101385 CN 01101385 A CN01101385 A CN 01101385A CN 1215376 C CN1215376 C CN 1215376C
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Abstract
The present invention relates to a high-temperature heat flow photoetching making method which comprises the steps: a high temperature heat flow photoresist is firstly provided, and a crosslinking agent is secondly added to the high temperature heat flow photoresist so as to form a high temperature heat flow crosslinking photoresist; subsequently, a base is provided, and an insulating layer is formed on the base; then, a high temperature heat flow crosslinking photoresist layer is formed on the insulating layer; and finally, an exposure making process, a development making process and a heat flow making process are respectively carried out.
Description
Technical field
The present invention relates to a kind of lithographic fabrication processes, and particularly relevant for a kind of high-temperature heat flux lithographic fabrication processes.
Background technology
Semi-conductive manufacturing process is generally divided into four modules (Module), comprise diffusion (Diffusion), etching (Etching), film (Thin Film) and take a picture (Photo), photograph module wherein promptly is to be responsible for lithographic fabrication processes, main work promptly be with the design transfer on the photomask (Mask) to wafer, to provide the etching module good etched pattern, the good doping of film module (Implant) pattern perhaps is provided, therefore, getting well with bad of lithographic fabrication processes directly controlled the superiority and inferiority of semiconductor fabrication process.
Along with the integration of integrated circuit is more and more higher, wide (pitch) is more and more littler for the line-spacing of bit line, word line even doped region and capacitor, and the resolution that therefore must improve exposure machine to be shifting meticulousr pattern, yet, improve the resolution of exposure machine, will lose the depth of focus.Otherwise, for obtaining good design transfer effect, improve the depth of focus, then make resolution reduce.Except above-mentioned utilization improves the exposure machine resolution with the method that shifts the fine pattern on the photomask, utilize the hot-fluid phenomenon of photoresist now in addition, to dwindle the live width of the exposing patterns on photoresist.
This is with the hot-fluid phenomenon of photoresist, dwindle the method for the exposing patterns live width of photoresist, be included in the manufacturing process of exposing, with with on the photomask after element pattern is transferred on the photoresist, carry out a baking manufacturing process and a development manufacturing process earlier, carry out a hot-fluid manufacturing process afterwards again, with the temperature that improves heating plate glass transition temperature (glass transferingtemperature to photoresist, Tg) more than, flow so that photoresist produces under high temperature, and then dwindle formed pattern line-width on photoresist.
Yet, because the photoresist hot-fluid has higher temperature sensitivity, so very little temperature variation, will cause the variation of the great critical size of pattern, so its manufacturing process nargin very narrow and small (being about 1 degree Celsius) to 2 degree, yet, the temperature error values of general heating plate is about 0.4 degree Celsius between 0.5 degree, therefore producing uniform live width as if the photoresist hot-fluid manufacturing process that will reach each wafer then must be under limited manufacturing process nargin, accurately control the temperature of each heating plate, therefore improved the degree of difficulty and the cost of manufacturing process and reduced yield.
Summary of the invention
Therefore fundamental purpose of the present invention is to provide a kind of high-temperature heat flux lithographic fabrication processes exactly, to improve manufacturing process nargin, reduces manufacturing cost.
For achieving the above object, the invention provides a kind of high-temp heat-stream photoetching method, it comprises: a high-temperature heat flux photoresist at first is provided, in the high-temperature heat flux photoresist, add a cross-linking reagent afterwards, to form a high-temperature heat flux crosslinked, wherein this cross-linking reagent comprises the polymkeric substance with hydroxybenzoic acid structure.Then, provide a substrate, and be formed with an insulation course on it.Continue it, on insulation course, form a high-temperature heat flux crosslinked layer.Continue it, carry out exposure manufacturing process, a development manufacturing process and a hot-fluid manufacturing process in regular turn.
Owing to include polymkeric substance in the high-temperature heat flux crosslinked with crosslinking functionality, therefore when temperature rising photoresist begins to produce the hot-fluid effect, polymkeric substance with crosslinking functionality is also because high temperature produces crosslinked action, therefore improve the glass transition temperature of photoresist, and then strengthened the manufacturing process nargin of hot-fluid manufacturing process.
In addition, because in the hot-fluid manufacturing process, the crosslinked action of cross-linked polymeric deposits yields, therefore not only improved the glass transition temperature of photoresist, also related making has preferable anti-etching ability via the photoresist after the high temperature manufacturing process, therefore can improve the etching selectivity of insulation course and photoresist layer under the subsequent etch during layer insulating.
The present invention also provides a kind of method that improves the manufacturing process nargin of high-temperature heat flux lithographic fabrication processes, and it comprises: a substrate is provided, is formed with an insulation course in this substrate; On this insulation course, form a photoresist layer, wherein contain a polymkeric substance of a plurality of crosslinking functionalities of tool in this photoresist layer, wherein this polymkeric substance comprises the polymkeric substance with hydroxybenzoic acid structure; Carry out a soft baking fabrication technique; Carry out an exposure manufacturing process; Carry out a hard baking fabrication technique; Carry out a development manufacturing process; And carry out a high temperature manufacturing process, so that this photoresist produces hot-fluid and make this polymkeric substance produce crosslinked action.
Description of drawings
For above-mentioned and other purposes of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. elaborates.In the accompanying drawing:
Figure 1A to Fig. 1 C is the flow process sectional view of a kind of hot-fluid lithographic fabrication processes according to one preferred embodiment of the present invention; And
Fig. 2 illustrate is for the hot-fluid photoresist and have the exposing patterns critical size of hot-fluid photoresist of cross-linked polymer and the graph of a relation of temperature of heating plate.
Wherein, the relation of each figure grade and member title is as follows:
100: substrate
102: insulation course
104: photoresist
104a: unexposed area
104b, 104c: exposure region
106: photomask
106a: optical mask pattern
108: the exposure manufacturing process
110,110a: opening
Embodiment
Figure 1A to Fig. 1 C is the flow process sectional view of a kind of hot-fluid lithographic fabrication processes according to one preferred embodiment of the present invention.
Please refer to Figure 1A, one substrate 100 at first is provided, be formed with a plurality of semiconductor elements (not illustrating) in this substrate 100, form an insulation course 102 in substrate 100, this insulation course 102 can be via formed silicon oxide layer of chemical vapour deposition technique or silicon nitride layer.
Then, on insulation course 102, form a photoresist 104, this photoresist 104 can be a polymkeric substance that contains a plurality of crosslinking functionalities (cross-linking functional group), and crosslinking functionality for example is a carboxyl, and the method that forms this photoresist is included in the high-temperature heat flux photoresist and adds a polymkeric substance with hydroxybenzoic acid structure to form the high-temperature heat flux crosslinked, and contained cross-linking reagent is about between 2% to 5% in this high-temperature heat flux crosslinked.
Continuous it, with a photomask 106 with optical mask pattern 106a, carry out an exposure manufacturing process 108, so that optical mask pattern 106a is transferred to photoresist 104, and in photoresist 104, form unexposed area 104a and exposure region 104b.Wherein, before the manufacturing process of exposing, also comprise and carry out a soft baking fabrication technique.
Please refer to Figure 1B, afterwards, carry out a hard baking fabrication technique.Then carry out a development manufacturing process,, in photoresist 104, form opening 110, and expose insulation course 102 to remove unexposed area 104a.
Please refer to Fig. 1 C, then, carry out high temperature manufacturing process hot-fluid manufacturing process just, so that enlarging, exposure region 104b becomes exposure region 104c, opening 110 then is reduced into opening 110a, and wherein this high temperature manufacturing process is for example carried out with heating plate and the temperature of its operation is about 150 degree Celsius to 160 degree.Owing to include polymkeric substance in the photoresist 104 with crosslinking functionality, therefore when temperature rising photoresist begins to produce the hot-fluid effect, polymkeric substance with crosslinking functionality is also because high temperature produces crosslinked action, therefore improve the glass transition temperature of photoresist, and then strengthened the manufacturing process nargin of hot-fluid manufacturing process.
Please refer to Fig. 2, illustrate is for the hot-fluid photoresist and have the exposing patterns critical size of hot-fluid photoresist of cross-linked polymer and the graph of a relation of temperature of heating plate.Wherein, clearly can learn by Fig. 2, no matter pattern is for dredging pattern or the close pattern (ratio of the space between pattern openings and the opening just, duty ratio, when duty ratio is more little then is close pattern, and duty ratio is big more then for dredging pattern), simple hot-fluid photoresist (TF) has great susceptibility for variation of temperature, when temperature raises Celsius 5 when spending, the critical size variable quantity of pattern is about 16nm.Review the hot-fluid photoresist (CLTF) that is mixed with cross-linked polymer proposed by the invention, it is subjected to temperature variation and the mobile variation that produces is inviolent, therefore can provide the hot-fluid manufacturing process bigger manufacturing process nargin.
In addition, because in the hot-fluid manufacturing process, the crosslinked action of cross-linked polymeric deposits yields, therefore not only improved the glass transition temperature of photoresist, also related making has preferable anti-etching ability via the photoresist after the high temperature manufacturing process, therefore can improve the etching selectivity of insulation course and photoresist layer under the subsequent etch during layer insulating.
Though the present invention discloses as above in conjunction with a preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can make various changes and retouching without departing from the spirit and scope of the present invention, so protection scope of the present invention should be defined by accompanying Claim.
Claims (7)
1. high-temp heat-stream photoetching method, it comprises:
One high-temperature heat flux photoresist is provided;
Add a cross-linking reagent in this high-temperature heat flux photoresist, to form a high-temperature heat flux crosslinked, wherein this cross-linking reagent comprises the polymkeric substance with hydroxybenzoic acid structure;
One substrate is provided, is formed with an insulation course in this substrate;
On this insulation course, form a high-temperature heat flux crosslinked layer;
Carry out an exposure manufacturing process;
Carry out a development manufacturing process; And
Carry out a hot-fluid manufacturing process.
2. high-temp heat-stream photoetching method as claimed in claim 1, wherein the temperature of this hot-fluid manufacturing process is that 150 degree Celsius are between 160 degree.
3. high-temp heat-stream photoetching method as claimed in claim 1, wherein this contained cross-linking reagent is between 2% to 5% in this high-temperature heat flux crosslinked.
4. method that improves the manufacturing process nargin of high-temperature heat flux lithographic fabrication processes, it comprises:
One substrate is provided, is formed with an insulation course in this substrate;
On this insulation course, form a photoresist layer, wherein contain a polymkeric substance of a plurality of crosslinking functionalities of tool in this photoresist layer, wherein this polymkeric substance comprises the polymkeric substance with hydroxybenzoic acid structure;
Carry out a soft baking fabrication technique;
Carry out an exposure manufacturing process;
Carry out a hard baking fabrication technique;
Carry out a development manufacturing process; And
Carry out a high temperature manufacturing process, so that this photoresist produces hot-fluid and make this polymkeric substance produce crosslinked action.
5. the method for the manufacturing process nargin of raising high-temperature heat flux lithographic fabrication processes as claimed in claim 4, wherein this crosslinking functionality comprises carboxyl.
6. the method for the manufacturing process nargin of raising high-temperature heat flux lithographic fabrication processes as claimed in claim 4, wherein the temperature of this high temperature manufacturing process is that 150 degree Celsius are between 160 degree.
7. the method for the manufacturing process nargin of raising high-temperature heat flux lithographic fabrication processes as claimed in claim 4, wherein this contained polymkeric substance is between 2% to 5% in this photoresist layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01101385 CN1215376C (en) | 2001-01-05 | 2001-01-05 | High-temp heat-stream photoetching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01101385 CN1215376C (en) | 2001-01-05 | 2001-01-05 | High-temp heat-stream photoetching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1363859A CN1363859A (en) | 2002-08-14 |
| CN1215376C true CN1215376C (en) | 2005-08-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 01101385 Expired - Lifetime CN1215376C (en) | 2001-01-05 | 2001-01-05 | High-temp heat-stream photoetching method |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8389402B2 (en) * | 2011-05-26 | 2013-03-05 | Nanya Technology Corporation | Method for via formation in a semiconductor device |
| US9941125B2 (en) | 2015-08-31 | 2018-04-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for integrated circuit patterning |
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2001
- 2001-01-05 CN CN 01101385 patent/CN1215376C/en not_active Expired - Lifetime
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| CN1363859A (en) | 2002-08-14 |
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Granted publication date: 20050817 |