CN1215361C - Liquid crsytal device and manufacture thereof - Google Patents
Liquid crsytal device and manufacture thereof Download PDFInfo
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- CN1215361C CN1215361C CN 02127183 CN02127183A CN1215361C CN 1215361 C CN1215361 C CN 1215361C CN 02127183 CN02127183 CN 02127183 CN 02127183 A CN02127183 A CN 02127183A CN 1215361 C CN1215361 C CN 1215361C
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Abstract
The present invention discloses a liquid crystal display and a manufacturing method thereof. The present invention prohibits from generating strong flicker when the aperture ratio is not descended and a display screen only displays pixels with identical polarity. In the liquid crystal display, a first data wire and a second data wire respectively apply pixel voltage with different polarity to a first pixel electrode and a second pixel electrode through a first thin film transistor and a second thin film transistor, the first data wire is covered by the second data wire, and an insulation film is clamped between the first data wire and the second data wire.
Description
Technical field
The present invention relates to a kind of LCD (LCD) and manufacture method thereof, and relate in particular to a kind of by unit pixel and two kinds of LCD that pixel capacitors is formed, wherein each unit pixel has two driving element and two pixel capacitors by identical scanning line driving, one of them pixel capacitors is applied in a pixel voltage of presenting from two data lines through one of them driving element, the opposite polarity voltage of presenting with last data line that another pixel capacitors is applied in through another driving element that from two data lines another present also relates to the manufacture method of above-mentioned LCD.
The application requires to enjoy the right of priority of the Japanese patent application JP2001-085545 that submits to May 23 calendar year 2001.This application is drawn at this and is reference.
Background technology
LCD is widely used as the display of various information equipments.The essential structure of LCD makes liquid crystal be placed between TFT (thin film transistor (TFT)) substrate (driving element substrate) and the opposite substrate with the form of sealing, wherein the TFT of Xing Chenging serves as on-off element (driving element), being used to carry out ON/OFF switches, select each pixel unit, thereby on display screen, provide demonstration, in this LCD structure, a plurality of pixel units are pressed matrix form and are distributed.LCD roughly is divided into TN (twisted-nematic phase) type LCD and IPS (coplane switching) type LCD according to the difference of its display mode.
In TN type LCD, apply pixel voltage to being formed on the suprabasil pixel capacitors of TFT, and apply common electric voltage to being formed on the suprabasil public electrode in opposite, poor by pixel voltage and common electric voltage, on perpendicular to the direction on the plane of TFT substrate and opposite substrate, produce a longitudinal electric field, thereby drive liquid crystal.
On the other hand, in IPS type LCD, pixel capacitors and public electrode are formed in one of them TFT substrate of two substrates, the mode that forms is for insulated from each other by an interlayer dielectric, and by the voltage difference between pixel capacitors and the public electrode, with the two the direction of planar horizontal of pixel capacitors and public electrode on produce a transverse electric field, thereby drive liquid crystal.
When driving LCD by said method, especially during IPS type LCD, an advantage is arranged: because the longitudinal axis of liquid crystal molecule is distributed in along TFT substrate and the two surperficial horizontal direction of opposite substrate, so even visual angle change also can make the brightness variation less when observing LCD, and can provide a very wide visual angle.Therefore, a kind of trend of using IPS type LCD of having a preference for is arranged in recent years.
Figure 35 is the planimetric map of the IPS type LCD of routine.Figure 36 is that Figure 35 is along the existing sectional view of L-L.Only show the structure of a pixel unit 100 in Figure 35 and in 36.Shown in Figure 35 and 36, liquid crystal 103 is placed between TFT substrate 101 and the opposite substrate 102 in the mode of sealing.TFT substrate 101 comprises first transparent substrates of being made by glass etc. 106; Be formed on first polaroid 107 at first transparent substrates, 106 back sides; Be formed on the sweep trace 108 (grid bus) on first transparent substrates, 106 part surfaces; Be formed on the lip-deep public electrode 109 of first transparent substrates, 106 other parts; The interlayer dielectric 110 that serves as gate insulating film, forms in the mode that covers sweep trace 108 and public electrode 109; Be formed on the sweep trace 108, have a semiconductor layer 113 that is clipped in the interlayer dielectric 110 between itself and the sweep trace 108; Be connected respectively to the drain electrode 116 and the source electrode 117 of semiconductor layer 113; Be formed on the pixel capacitors 121 and the data line 122 that become one with drain electrode 116 and source electrode 117 on the interlayer dielectric 110; The passivating film 125 that forms in the mode that covers pixel capacitors 121 and data line 122; And one form with the form that covers pixel capacitors 121 and data line 122 and passivating film 125 is clipped in first alignment films 127 between itself and pixel capacitors 121 and the data line 122.Herein, sweep trace 108, semiconductor layer 113, drain electrode 116 and source electrode 117 are formed TFT129.
On the other hand, opposite substrate 102 comprises second transparent substrates 131 of being made by glass etc.; Be formed on the back side of second transparent substrates 131, between itself and second transparent substrates 131, clip second polaroid 133 of the conductor layer 132 of electrostatic prevention; Be formed on second transparent substrates, 131 lip-deep black-matrix layer 134; The dyed layer that serves as optical filter 135 that forms in the mode that covers black matrix" 134; The polarizing coating 136 that forms with the form that covers black-matrix layer 134 and dyed layer 135; With second alignment films 137 that is formed on the polarizing coating 136.The orientation of arrow line 139 expression liquid crystal 103.
In order to drive the LCD of above-mentioned routine, the pixel capacitors 121 of forming pixel unit 100 is periodically applied each cycle the voltage of opposed polarity, and this helps to prolong the life-span of liquid crystal 103.That is, each cycle as shown in figure 37 has the voltage Ve of opposed polarity to be fed to pixel capacitors 121 by TFT129 from data line 122.In Figure 37, when presenting the scanning voltage (not shown), common electric voltage Vc imposes on public electrode 109, and liquid crystal 103 regularly drives by pressure reduction Vd1 and the Vd2 between pixel voltage Ve and the common electric voltage Vc, and liquid crystal 103 keeps and the corresponding electric charge of each voltage that is used for above-mentioned driving.
In order to have the voltage Ve of opposed polarity to drive liquid crystal 103, mainly adopt three kinds of methods described below by periodically presenting in each cycle for pixel capacitors 121.First method is called " the driving method that a level is reverse ", wherein, switch in the display view data of forming an image, then for each horizontal line of pixel unit 100, the polarity of pixel unit 100 is turned to negative sense and turns to forward from negative sense from forward, shown in Figure 38 A.Second method is called " a vertical reverse drive method ", wherein will switch view data, then for each vertical row of unit pixel 100, the polarity of pixel unit 100 is turned to negative sense and turns to forward from negative sense from forward, shown in Figure 38 B.The third method is called " some reverse drive method ", wherein will switch view data, and then the polarity to each pixel unit 100 of naming a person for a particular job turns to negative sense and turns to forward from negative sense from forward, and its mode makes pixel unit 100 be shown as the grid shown in Figure 38 C.
Figure 39 is the driving circuit sketch that adopts among the conventional LCD, and Figure 40 is end A among Figure 39 and the enlarged drawing of end B.As shown in figure 39, scan line drive circuit 151 is connected to matrix form and distributes and the sweep trace 108 of composition pixel unit 100, scanning-line signal is fed to each pixel unit 100 by sweep trace 108, and data line drive circuit 152 is connected to data line 122, and data line signal is fed to pixel unit 100 by data line 122.And public electrode line drive circuit 153 is connected to public electrode wire 120, and common electric voltage Vc is fed to pixel unit 100 by public electrode wire 120.
From Figure 40, know and see, in the A of end, be used for applying by ITO film (tin indium oxide) 122a to each data line end 122A that data line 122 is supplied with electromotive forces.And, in the B of end, apply the sweep trace end 108A that is used for supplying with electromotive force to sweep trace 108 with ITO film 108a, apply the public electrode thread end 120A that is used for supplying with electromotive force to public electrode wire 120 with ITO film 120a.
But the shortcoming of conventional LCD is, when needs only show on display screen by the pixel unit 100 with identical polar, serious flicker will occur, and this causes unclear display screen.For example, when the pixel that has only the positive polarity shown in Figure 41 A or when having only the pixel of the negative polarity shown in Figure 41 B to be shown as grid, serious flicker appears.This is because conventional LCD structure, by show a plurality of each be supplied to the pixel unit 100 of the pixel voltage Ve of opposed polarity, the appearance of flicker reduces significantly.More particularly, this is to be dependent on the positive and negative and different of the polarity that applies voltage because be connected the data voltage retention performance of the on state characteristic of the TFT129 between data line 122 and the pixel capacitors 121 and liquid crystal 103.That is in Figure 37, if pressure reduction Vd1 and Vd2 are equal to each other then are no problem, but because common electric voltage Vc changes, so that pressure reduction Vd1 becomes is different with pressure reduction Vd2, therefore, when pixel unit 100 shows grids, serious flicker appears inevitably.
A kind of LCD of routine is disclosed among the Japanese patent application JP2000-235371, wherein even when showing each pixel unit 100 with identical polar to forbidding that serious flicker occurring attempts.Figure 42 A is the circuit structure diagram that adopts among the above-mentioned conventional LCD of expression.Figure 42 B is that the disclosed conventional LCD of arrangenent diagram shown in Figure 42 A and 42b of conventional LCD shown in Figure 42 A comprises sweep trace 201c, main data line 202c, inferior sweep trace 202d, the common wire 209, be connected to the main TFT 203c of sweep trace 201c and main data line 202c point of crossing, be connected to the inferior TFT203d of sweep trace 201c and secondary data line 202d point of crossing, opposite electrode 211, main pixel capacitors 204c, be placed on liquid crystal 210c between opposite electrode 211 and the main pixel capacitors 204c with form hermetically, be placed on liquid crystal 210d between another opposite electrode 211 and the inferior pixel capacitors 204d with form hermetically, be formed on the memory capacitance 208c between common wire 209 and the main pixel capacitors 204c, and be formed on the memory capacitance 208d between common wire 209 and time pixel capacitors 204d.
In having the conventional LCD of said structure, shown in Figure 38 A, when switching to the view data that is present in a composition pixel image on the horizontal line, by each pixel unit 100 is arrived forward or negative sense to the polar switching of the pixel voltage that is fed to central electrode 204c, otherwise still, and the polar switching of the pixel voltage that is fed to sub-electrode 204d to negative sense or forward, otherwise in the time of still, for each pixel unit 100 pixel with positive polarity of same brightness and the pixel with negative polarity always can be set adjacent to each other, and therefore, even when only demonstration has the pixel of identical polar, also can forbid the generation of strong flicker.
But, in above-mentioned conventional LCD, though even when only showing pixel, also can forbid the generation of strong flicker with identical polar, but there is a problem to be, because be formed on main data line and the secondary data line applying the pixel voltage with positive polarity for respectively in the pixel unit 100 main pixel capacitors and time pixel capacitors and have the pixel voltage of negative polarity on same plane, the aperture that pixel unit 100 therefore occurs is than descending.Promptly, in the LCD of the disclosed routine of Japanese patent application JP2000-235371, shown in Figure 42 A and 42b, because form two class data lines at grade: the main data line 202c that is used for pixel voltage being fed to main pixel capacitors 204c by main TFT203c, be used for pixel voltage being fed to the secondary data line 202d of time pixel capacitors 204d by inferior TFT 203d, so the area that data line occupies in pixel unit 100 is double, this causes the area of printing opacity to reduce, and has therefore reduced the aperture ratio.
In the situation of IPS type LCD, shown in Figure 35 and 36, because metal public electrode 109 and the pixel capacitors 121 that be in the light settle at grade, so the aperture is very littler than at first.Therefore, if adopt the structure shown in Figure 42 A and the B in IPS type LCD, then the ratio no good cake that will become in aperture makes to be difficult to realize that bright LCD shows.
Summary of the invention
Consider above-mentioned situation, the object of the present invention is to provide a kind of LCD and manufacture method thereof, also avoid the appearance of strong flicker when wherein this LCD can even only show the pixel with identical polar on display screen, and can not cause the decline of aperture ratio.
According to a first aspect of the invention, the LCD that provides comprises:
A plurality of pixel units, each pixel unit has sealing and is placed on liquid crystal between driving element substrate and the opposite substrate, wherein in the driving element substrate, be formed with driving element, driving element is by being formed by first and second driving elements of same scanning line driving, and have first and second pixel capacitors, present pixel voltage from one of first and second data lines to one of first and second pixel capacitors by one of first and second driving elements, present and the aforementioned opposite polarity pixel voltage of presenting from one of first and second data lines of pixel voltage by from first and second data lines another of in first and second driving elements another another in first and second pixel capacitors;
Wherein first and second data lines are arranged in such a way, and promptly be arranged on first data line, and first data line are covered by second data line, clip dielectric film between suprabasil first and second data lines of driving element.
In aforementioned circumstances, to be dielectric film be made of the overlapped layers of organic insulating film or inorganic insulating membrane or inorganic insulating membrane and organic insulating film preference pattern.
In addition, also having a kind of preference pattern is that first and second pixel capacitors and public electrode are formed in the driving element substrate in the mode that insulate by interlayer dielectric each other.
In addition, also having a kind of preference pattern is that first and second pixel capacitors and first data line are formed on the same dielectric film.
In addition, also having a kind of preference pattern is that first and second pixel capacitors and second data line are oriented the film covering.
In addition, also having a kind of preference pattern is that first and second data lines of the two pixel voltage that applies identical polar overlap each other.
In addition, also having a kind of preference pattern is that first and second pixel capacitors in the different towards each other pixel unit of first and second data lines apply pixel voltage.
In addition, also having a kind of preference pattern is to form dyed layer in the driving element substrate.
In addition, also having a kind of preference pattern is that public electrode contacts with liquid crystal by alignment films.
In addition, also having a kind of preference pattern is that second data line is arranged in such a way, and promptly second data line is arranged on first data line, and first data line is covered by second data line, clips interlayer dielectric between first and second data lines.
In addition, also having a kind of preference pattern is that first and second pixel capacitors and public electrode are formed on the same interlayer dielectric that covers second data line.
In addition, also having a kind of preference pattern is that public electrode is formed in the substrate of opposite.
In addition, be that pixel unit drives by a horizontal reverse drive method, a vertical reverse drive method or some reverse drive method by a kind of preference pattern again.
According to a second aspect of the invention, the method of a kind of LCD of manufacturing is provided, wherein LCD comprises pixel unit, each pixel has by first and second driving elements of identical scanning line driving, and have first and second pixel capacitors, each pixel capacitors applies the pixel voltage with opposed polarity by first and second driving elements from first and second data lines respectively, and method comprises:
The first step, the mode that is formed into the sweep trace of first interlayer dielectric covering afterwards on the transparent substrates with sweep trace forms first interlayer dielectric, and forms a semiconductor layer on first interlayer dielectric;
Second step, on semiconductor layer, form a drain electrode and a source electrode, thereby form first and second driving elements, and at first interlayer dielectric and be connected on first data line of drain electrode of one of first or second driving element and form first and second pixel capacitors;
The 3rd step: after the mode of second interlayer dielectric covering driving element forms second interlayer dielectric, in second interlayer dielectric, form a contact hole, and mode overlapping by second data line with first data line, that clip second interlayer dielectric therebetween forms second data line that is connected to the drain electrode of another driving element through contact hole.
In aforementioned circumstances, a kind of preference pattern is in the 3rd step, as second interlayer dielectric, can be formed by the overlapped layers of organic insulating film or inorganic insulating membrane or inorganic insulating membrane and organic insulating film.
For said structure, form first and second data lines from first and second TFT to first and second pixel capacitors that present the pixel voltage of opposed polarity through by this way, promptly first data line is overlapping by second data line, clip dielectric film therebetween, and therefore the area that is occupied by data line in the pixel unit reduces, and does not show the area difference that data line occupies in the situation of utilizing two data lines with in the situation of utilizing a data line.And, because adopt a kind of formation to comprise the known method of film of conducting film and dielectric film and the combination of known patterning thin film method, so can not make this kind LCD at an easy rate with raising the cost.Therefore, even when on display screen, only showing when having the pixel of identical polar, also can not cause the aperture avoid the generation of strong flicker under than situation about descending.
Description of drawings
By the description below with reference to accompanying drawing, above-mentioned and other purpose, advantage and characteristics of the present invention will be more clear, wherein:
Fig. 1 is the structural plan figure according to the LCD of first embodiment of the invention;
Fig. 2 is the sectional view along A-A line among Fig. 1;
Fig. 3 is the sectional view along B-B line among Fig. 1 '
Fig. 4 is the LCD structural plan figure that removes second data line from LCD structure shown in Figure 1;
Fig. 5 is the planimetric map according to the second data line pattern of the LCD of this first embodiment;
Fig. 6 is according to the data line of first embodiment of the invention and connection between the pixel capacitors and distribution relation sketch;
Fig. 7 is the waveform of the pixel voltage presented from data line according to first embodiment of the invention;
Fig. 8 is the structural plan figure according to the LCD of second embodiment of the invention;
Fig. 9 is the sectional view along C-C line among Fig. 8;
Figure 10 is the LCD structural plan figure that removes second data line from LCD structure shown in Figure 8;
Figure 11 is the planimetric map that is used in the second data line pattern in the second embodiment of the invention;
Figure 12 is data line and connection between the pixel capacitors and the distribution relation sketch that is used in the second embodiment of the invention;
Figure 13 is the structural plan figure according to the LCD of third embodiment of the invention;
Figure 14 is the sectional view along D-D line among Figure 13;
Figure 15 is the sectional view along E-E line among Figure 13;
Figure 16 is the method step figure according to the manufacturing LCD of third embodiment of the invention;
Figure 17 is the method step figure according to the manufacturing LCD of third embodiment of the invention;
Figure 18 is the method step figure according to the manufacturing LCD of third embodiment of the invention;
Figure 19 is the method step figure according to the manufacturing LCD of third embodiment of the invention;
Figure 20 is the method step figure according to the manufacturing LCD of third embodiment of the invention;
Figure 21 is used in the driving circuit sketch among the LCD of third embodiment of the invention;
Figure 22 is the enlarged drawing of expression Figure 21 medial end portions A and Figure 21 medial end portions B;
Figure 23 is the other method block diagram according to the manufacturing LCD of third embodiment of the invention;
Figure 24 is the other method block diagram according to the manufacturing LCD of third embodiment of the invention;
Figure 25 is the other method block diagram according to the manufacturing LCD of third embodiment of the invention;
Figure 26 is the LCD structural plan figure according to fourth embodiment of the invention;
Figure 27 is the sectional view along F-F line among Figure 26;
Figure 28 is the sectional view along G-G line among Figure 26;
Figure 29 is the structural plan figure according to the LCD of fifth embodiment of the invention;
Figure 30 is the sectional view along H-H line among Figure 29;
Figure 31 is the sectional view along I-I line among Figure 26;
Figure 32 is the structural plan figure according to the LCD of sixth embodiment of the invention;
Figure 33 is the sectional view along J-J line among Figure 32;
Figure 34 is the sectional view along K-K line among Figure 32;
Figure 35 is the plane structure chart of the IPS type LCD of routine;
Figure 36 is the sectional view along L-L line among Figure 35;
Figure 37 is the signal waveforms that is used for driving Figure 35 and 36 conventional LCD;
Figure 38 A, 38B and 38C are the method synoptic diagram that is used to drive conventional LCD;
Figure 39 is the driving circuit figure of conventional LCD;
Figure 40 is the enlarged drawing of expression Figure 39 medial end portions A and Figure 39 medial end portions B;
Figure 41 A and Figure 41 b are the sketches of interpretation routine LCD defective;
Figure 42 A and 42B are the structure diagrams of the conventional LCD of expression.
Embodiment
Utilize different embodiment to do description further below with reference to the accompanying drawings to carrying out optimal mode of the present invention.
First embodiment
Fig. 1 is the structural plan figure according to the LCD of first embodiment of the invention.Fig. 2 is the sectional view along A-A line among Fig. 1.Fig. 3 is the sectional view along B-B line among Fig. 1.Fig. 4 is the LCD structural plan figure that removes second data line from LCD structure shown in Figure 1.Fig. 5 is the planimetric map according to second data line, 24 patterns of the LCD of this first embodiment.Fig. 6 is according to the data line of first embodiment of the invention and connection between the pixel capacitors and distribution relation sketch, and data line comprises first data line 22 and second data line 24, and pixel capacitors comprises first pixel capacitors 21 and second pixel capacitors 23.Fig. 7 is the pixel voltage Ve1 that presents from data line 22,24 according to first embodiment of the invention, the waveform of Ve2.In first embodiment, IPS type LCD in the example that provides is provided the present invention, and only shows the structure of a pixel unit 5 in the drawings.
In the LCD of first embodiment, shown in Fig. 1～5, liquid crystal 3 is placed between TFT substrate 1 and the opposite substrate 2 hermetically.TFT substrate 1 comprises first transparent substrates of being made by glass etc. 6, be formed on first polaroid 7 at first transparent substrates, 6 back sides, by aluminium (AL), chromium (Cr), the sweep trace 8 that serves as grid bus on formation first transparent substrates 6 part surfaces that molybdenum (Mo) etc. is made, by AL, Cr, Mo etc. make is formed on the lip-deep public electrode 9 of first transparent substrates, 6 other parts, first interlayer dielectric of making by silicon dioxide (SiOx) film 10 that serves as gate insulating film, silicon nitride film (SiNx), the lamination of making by SiOx film and SiNx film etc., first semiconductor layer of making by amorphous silicon (a-Si) 13 and second semiconductor layer of also making 14 by amorphous silicon (a-Si), wherein first semiconductor layer 13 has and is formed on first pair of ohm layer (not shown) that its lip-deep high concentration n+ type amorphous silicon (n+ type a-Si) is made, second semiconductor layer 14 has a pair of its lip-deep second couple of ohm layer 12A that is made by high concentration n+ type amorphous silicon a-Si and 12B that be formed on, the two all is formed on first interlayer dielectric 10 in the mode that is positioned on the sweep trace 8, first interlayer dielectric 10 be clipped in first and second semiconductor layers 13 and 14 and sweep trace 8 between, TFT substrate 1 also comprise be connected with a pair of first ohm layer (not shown) on first semiconductor layer 13 by Al, Cr, first drain electrode 16 that Mo etc. make, be connected with the first ohm layer (not shown) on first semiconductor layer 13 by Al, Cr, the first source electrode 17 that Mo etc. make, be connected with the second ohm layer 12A on second semiconductor layer 14 by Al, Cr, second drain electrode 18 that Mo etc. make, be connected with a pair of second ohm layer 12B on second semiconductor layer 14 by Al, Cr, the second source electrode 19 that Mo etc. make, with the mode that forms one with first drain electrode 16 and the first source electrode 17 be formed on first interlayer dielectric 10 by Al, Mo, first pixel capacitors 21 that Ti makes and first data line 22, with the mode that forms one with second drain electrode 18 and the second source electrode 19 be formed on first interlayer dielectric 10 by Al, Mo, second pixel capacitors 23 that Ti makes, second data line 24 that is formed by second data line, 24 overlapping modes with first data line 22, wherein passivating film 25 is clipped between first data line 22 and second data line 24, TFT substrate 1 also comprises the film by SiOx, second interlayer dielectric 26 that the SiNx film is made, the overlapped layers of making by SiOx film and SiNx film, have on the passivating film 25 on first and second semiconductor layers 13 and 14 the synthetic film of the organic membrane that forms etc. and first alignment films 27 that forms in the mode that covers first and second pixel capacitors 21 and 23 and second data line 24.
On the other hand, opposite substrate 2 comprises: second transparent substrates of being made by glass etc. 31; Be in second polaroid 33 of second transparent substrates, 31 back, be used to wherein prevent that the conductive layer 32 of static is clipped between second polaroid 33 and second transparent substrates 31; Be formed on second transparent substrates, 31 lip-deep black-matrix layer 34; The dyed layer 35 that forms in the mode that covers black matrix" 34 as optical filter; The planarization film 36 that forms in the mode that covers black matrix" 34 and dyed layer 35; Be formed on second alignment films 37 on the planarization film 36.The orientation of arrow line 39 expression liquid crystal 3.
In having the LCD of said structure, sweep trace 8, first semiconductor layer 13, first drain electrode 16 and the first source electrode 17 are formed a TFT 29.Similarly, sweep trace 8, second semiconductor layer 14, second drain line 8 and the second source electrode 19 are formed the 2nd TFT 30.Because a TFT29 and the 2nd TFT 30 are formed on the sweep trace 8 jointly, first interlayer dielectric 10 is clipped between a TFT 29 and second, TFT 30 and the sweep trace 8, so a TFT 29 is driven by identical sweep trace 8 with the 2nd TFT30.The pattern that first data line 22 and second data line 24 form is similar each other.First data line 22 is connected to first drain electrode 16 that is present near its TFT 29.On the other hand, second data line 24 of formation has pattern as shown in Figure 5, and the contact hole 28 in being formed on the passivating film 25 and second interlayer dielectric 26 is connected to second drain electrode 18 that is present in the 2nd TFT 30 that surveys outside the TFT 29.Thereby the pixel voltage of presenting from first data line 22 is applied to first pixel capacitors 21 through a TFT 29.On the other hand, the pixel voltage of presenting from second data line 24 is applied to second pixel capacitors 23 through the 2nd TFT 30.Fig. 6 is first and second data lines 22 and annexation 24 and first and second pixel capacitors 21 and 23 between and the sketch of distribution of expression according to first embodiment of the invention.
Next, by describe the method that drives LCD among first embodiment with reference to the waveform of signal voltage shown in Figure 7.The first pixel voltage Ve1 that Fig. 7 represents to present from first data line 22, the second pixel voltage Ve2 that presents from second data line 24 and the waveform of common electric voltage Vc.The first pixel voltage Ve1 with respect to the common electric voltage Vc that is used as reference voltage level to become positive voltage V1 at t1 constantly, to become positive voltage V2 constantly and change in the mode that t3 becomes V3 constantly at t2.The second pixel voltage Ve2 has the opposite polarity with the first pixel voltage Ve1.That is, the second pixel voltage Ve2 with respect to common electric voltage Vc to become negative voltage-V1 at t1 constantly, to become negative voltage-V2 constantly and change in the mode that t3 becomes negative-V3 constantly at t2.The first pixel voltage Ve1 is applied to first pixel capacitors 21 from first data line 22 through a TFT 29, and simultaneously, the second pixel voltage Ve2 is applied to second pixel capacitors 23 from second data line 24 through the 2nd TFT 30.As a result, always the polarity with the pixel voltage that is applied to second pixel capacitors 23 is opposite to be applied to the polarity of pixel voltage of first pixel capacitors 21, and liquid crystal 3 keeps corresponding to the electric charge that applies voltage.
Thereby, otherwise by to each pixel unit 5 the polar switching that will be applied to the pixel voltage on first and second pixel capacitors 21 and 23 be forward or negative sense or, because can guarantee to make the pixel of the positive polarity that roughly the same brightness is provided and the pixel of negative polarity to be provided with adjacent to each other for each pixel unit 5, even, also can avoid the generation of strong flicker so on a display screen, only show pixel with identical polar.Any method by above-mentioned three driving methods can obtain these effects.And, in the LCD of first embodiment, first and second data lines 22 and 24 are formed by second data line, 24 modes overlapping, that clip passivating film 25 between the two with first data line 22, therefore and can avoid the increase of the area that in pixel unit 5, occupies by two data lines 22,24, do not show in the situation of utilizing two data lines 22,24 and utilize between the situation of a data line 22 or 24 by data line 22 or 24 occupied areas variantly, this makes can improve the aperture ratio.Particularly be used for the IPS type LCD of present embodiment because first and second pixel capacitors 21 and 23 and public electrode 9 by making aperture smaller shading metal such as Al at first, Cr, Mo, Ti etc. make, so can obtain more remarkable effect in the present embodiment.
Because first and second pixel capacitors 21 and 23 and second data line 24 form in the face of liquid crystal 3 ground, first alignment films 27 is clipped between first and second pixel capacitors 21 and 23 and second data line 24 and the liquid crystal 3, and because the thickness of first alignment films 27 is little of about 50nm, so must selection will be not dissolved in the stable metal of liquid crystal 3.As above-mentioned Al, Mo, Ti or their alloy etc. can satisfy above-mentioned needs.And, the waveform that is fed to the pixel voltage of first and second data lines 22 and 24 is proportional to first data line 22 and is distorted by the increase of the area of second data line, 24 coverings, preferably reduces any one line thickness in first data line 22 or second data line 24.In addition, wish to use a kind of conductor resistance that can make second data line 24 to be lower than the metal of the conductor resistance of first data line 22.It is bigger also to wish to press from both sides passivating film 25 thickness that are formed between first data line 22 and second data line 24, and dielectric film or stacked film that crust is made by the organic material of less specific inductive capacity are elected to be the metal that is used for passivating film 25.As shown in Table 1, 2 and 3, passivating film 25 can only utilize organic membrane to constitute by stacked film or (3) that (1) only uses inoranic membrane, (2) to use inoranic membrane and organic membrane to make.
[table 1]
| Material | Thickness | Specific inductive capacity | |
| (1) by only using inoranic membrane | The | 1 μ m to 3 μ m | 6.4 |
| The SiNx/SiOx film | 1μm/0.5μm | 6.4/4.0 | |
| | 1 μ m to 2 μ m | 4.5 | |
| The inorganic polysilazanes film of SiNx/ | 0.15 μ m/1 μ m to 2 μ m | 6.4/4.5 |
| Sedimentation | Job operation |
| Plasma CVD | Make the dry etching method of making mask with photoresist |
| Plasma CVD/sputter | Make the dry etching method of making mask with photoresist |
| Spin coating and aging | Make the dry etching method of making mask with photoresist |
| Plasma CVD/spin coating and aging | Make the dry etching method of making mask with photoresist |
[table 2]
| Material | Thickness | Specific inductive capacity | |
| By the lamination that constitutes by inoranic membrane and organic membrane | SiNx/ photosensitive acrylic resin film | 0.15 μ m/l μ m to 2 μ m | 6.4/3.3 |
| SiNx/ photosensitive polyimide resin film | 0.15 μ m/l μ m to 2 μ m | 6.4/- |
| Sedimentation | Job operation |
| Plasma CVD/spin coating | By to photosensitive acrylic resin film exposure with develop and aging then/the SiNx dry etching is formed pattern |
| Plasma CVD/spin coating | By to photosensitive polyimide resin film exposure with develop and aging then/the SiNx dry etching is formed pattern |
[table three]
| Material | Thickness | Specific inductive capacity | |
| (3) by only using organic membrane | BCB (benzocyclobutane is bright) | 1 μ m to 2 μ m | 4.5 |
| | 1 μ m to 2 μ m | 3.8 | |
| | 1 μ m to 2 μ m |
| Sedimentation | Job operation |
| Spin coating and aging | Make the dry etching method of making mask with photoresist |
| Spin coating and aging | Make the dry etching method of making mask with photoresist |
| Spin coating and aging | Make the dry etching method of making mask with photoresist |
And, in the IPS of embodiment type LCD, when by first and second pixel capacitors 21 and 23 and public electrode 9 when producing a transverse electric field, wishing does not have passivating film 25 to be present in the surface of first and second pixel capacitors 21 and 23, if perhaps even as shown in Figure 2 have a passivating film 25, the thickness of passivating film 25 is also done very for a short time, makes transverse electric field be easy to be applied to liquid crystal 3.
Thereby, LCD according to embodiment, each forms by this way by first and second TFT29 and 30 first and second data lines 22 and 24 that apply the pixel voltage with opposed polarity to first and second pixel capacitors 21 and 23, promptly first data line 22 is covered by second data line 24, passivating film 25 is clipped between first data line 22 and second data line 24, and therefore can avoid in pixel unit 5 by the increase of first and second data lines 22 and 24 areas that occupy, at two data lines 22 of use, 24 situation and only use the difference that does not show the data line area occupied between the situation of a data line.Therefore, even when on display screen, only showing not cause that also the aperture than the generation of forbidding strong flicker with descending when having the pixel unit 5 of identical polar.
Second embodiment
Fig. 8 is the structural plan figure according to the LCD of second embodiment of the invention.Fig. 9 is the sectional view along C-C line among Fig. 8; Figure 10 is the LCD structural plan figure that removes second data line 44 from LCD structure shown in Figure 8.Figure 11 is the planimetric map that is used in second data line, 44 patterns in the second embodiment of the invention.Figure 12 is being connected and the distribution relation sketch between data line 22,44 and the pixel capacitors 21,23 that is used in the second embodiment of the invention.
The difference of the structure of LCD is to keep the annexation between 21,23 and two data lines 22,24 of two pixel capacitors among the structure of LCD among second embodiment and first embodiment, but changes the distribution relation of two data lines 22,24.
That is, shown in Fig. 8～11, in the LCD of second embodiment, replace second data line 24 that is used for first embodiment, adopt second data line 44, this second data line has the pattern that is different from second data line 24 among first embodiment.The LCD of present embodiment is configured to that first data line 22 is connected to first pixel capacitors 21 by a TFT29 in a pixel unit 5, and new second data line 44 that is present in the adjacent image point unit 5 is connected to second pixel capacitors 23 by the 2nd TFT30.Figure 12 be first and second data lines 22,44 with pixel capacitors 21,23 between be connected and the distribution relation sketch.
In the present embodiment, as seen from Figure 12, because mode 44 overlapping by second data line with first data line 22, that clip passivating film 25 therebetween constitutes first data line 22 and second data line 44, first data line 22, first pixel capacitors 21 in a pixel unit applies second pixel capacitors 23 that first pixel voltage and second data line 44 exist and applies polarity second pixel voltage opposite with first pixel voltage in neighboring pixels unit 5, so the polarity of the pixel voltage that is applied by the two the first overlapping data line 22 and second data line 44 can be identical.As a result, can reduce influence to the electromotive force that applies mutually by two data lines 22,44.In addition, the structure of the LCD of second embodiment is basically the same as those in the first embodiment.Therefore, in Fig. 8～Figure 10, to adopting identical label, and therefore save description of them with assembly that Fig. 1～Fig. 4 has an identical function.
Thereby, also can realize the essentially identical effect that is obtained with first embodiment at second embodiment.In addition, in a second embodiment, can become littler to the influence of the electromotive force that applies mutually by two data lines 22,24.
The 3rd embodiment
Figure 13 is the structural plan figure according to the LCD of third embodiment of the invention.Figure 14 is the sectional view along D-D line among Figure 13.Figure 15 is the sectional view along E-E line among Figure 13.Figure 16～Figure 20 is the method step figure according to the manufacturing LCD of third embodiment of the invention.Figure 21 is used in the structure diagram of the driving circuit that adopts among the LCD of third embodiment of the invention.Figure 22 is the enlarged drawing of expression Figure 21 medial end portions A and Figure 21 medial end portions B.Figure 23～Figure 25 is the other method block diagram according to the manufacturing LCD of third embodiment of the invention.The maximum difference of the structure of the LCD of the 3rd embodiment and first embodiment is, shown in Figure 13～15, public electrode 9 is forming with the overlapping mode of first and second data lines 22,24, and public electrode 9 forms same one deck with 43 by identical method with first and second pixel capacitors 41.
That is, in the LCD of the 3rd embodiment, shown in Figure 13～15, second passivating film 40 forms in the mode that covers first pixel capacitors 21, second pixel capacitors 23 and second data line 24.On second passivating film 40, form second interlayer dielectric 26 and the 3rd interlayer dielectric 42.On the 3rd interlayer dielectric 42, form first pixel capacitors 41 and second pixel capacitors of making by ITO () 43, and the public electrode of also making by ITO 9.First pixel capacitors 41 is connected to the first source electrode 17 through a contact hole 38 that is formed in the passivating film 25 and second interlayer dielectric 26.And second pixel capacitors 43 is connected to the second source electrode 19 through a contact hole 38 ' that is formed in passivating film 25, second interlayer dielectric 26 and the 3rd interlayer dielectric 42.
In the LCD of present embodiment, from Figure 14 and 15, be clear that, when first pixel capacitors 21 and 41, second pixel capacitors 23 and 43 and public electrode 9 when producing a transverse electric field, because first and second pixel capacitors 41 and 43 and public electrode 9 be formed on liquid crystal 3 near, and first alignment films 27 is clipped between liquid crystal 3 and first pixel capacitors 21 and second pixel capacitors 41 and the public electrode 9, so transverse electric field can be applied to liquid crystal 3 at an easy rate, and can reduce required driving voltage.And because can block the electric field that leaks from data line with the public electrode 9 that is formed on the superiors, so can reduce the area of black matrix" 34, this has further increased the aperture ratio.
Next, be described according to the order of process manufacture method with reference to Figure 16～20 LCD among the embodiment.In Figure 16～20, the part of being represented by label M-M, N-N and O-O corresponds respectively among Figure 22 along M-M, the sectional view of N-N and O-O.
At first, shown in Figure 16 (a), on the total surface of first transparent substrates of making by glass etc. 6, form the Cr film by sputtering method after, utilize wet etching on the Cr film, to carry out composition, thereby form sweep trace 8 and public electrode 9 with required form.
Next, shown in Figure 16 (b), form first interlayer dielectric 10 by the CVD method on the whole surface of sweep trace 8, first transparent substrates 6 and public electrode 9, this film serves as the gate insulating film that the stacked film be made up of SiOx film and SiNx film is made.Then, shown in Figure 16 (c), on the whole surface of first interlayer dielectric 10, form a-Si film 12 and n+ type a-Si film 15 successively by plasma CVD method.
Then, shown in Figure 16 (d), utilize the dry etching method on a-Si film 12 and n+ type a-Si film 15, to carry out composition, form second semiconductor layer 14 with required form.Next, shown in Figure 16 (e), on the whole surface of n+ type a-Si film 15 and first interlayer dielectric 10, second drain electrode 18 and source electrode 19, form after the Cr layer by sputtering method, by utilizing the dry etching method to carry out composition on the Cr layer, formation has first and second pixel capacitors 21 and 23 of required form.And first data line 22 on right side is the data line that the neighboring pixels unit is operated in Figure 16 (e).Then, shown in Figure 16 (f), be elected to be etching second semiconductor layer 14, form channel slot 20 by utilizing the dry etching method.By said process, form the 2nd TFT30.Though not shown, on another position of first transparent substrates 6, form a TFT 29.
Next, shown in Figure 17 (g), on the whole surface of above-mentioned exposure element, form a SiNx film 45 that serves as passivating film by the CVD method.Then, shown in Figure 17 (h), utilize spin coating method on the whole surface of SiNx film 45, to form the photosensitive organic dielectric film 46 that serves as film 26 between the second layer.Next, shown in Figure 17 (i), on photosensitive organic dielectric film 46, form contact hole 28A and 38A by exposure and developing process.Then, shown in Figure 18 (j), in SiNx film 45, form contact hole 28B and 38B by utilizing the dry etching method.By said process, contact hole 28A and 28B are connected with each other, and form new contact hole 28 thus.
Next, shown in Figure 18 (k), after on the whole surface of contact hole, forming the Mo film, utilize wet etching method on the Mo film, to carry out composition, form second data line 24 that is connected to the 2nd TFT 30 drain electrodes 18 with required form by sputtering method.Next, shown in Figure 19 (l), by utilizing spin coating method on above-mentioned exposure element, to form to serve as after the photosensitive organic dielectric film 47 of the 3rd interlayer dielectric 42, shown in Figure 19 (m), on photosensitive organic dielectric film 47, form contact hole 38C by exposure and developing process.By said process, contact hole 38A, 38B and 38C are connected to each other, and form new contact hole 38.And photosensitive organic dielectric film 46 serves as second interlayer dielectric 26, and photosensitive organic dielectric film 47 serves as the 3rd interlayer dielectric 42.
Next, shown in Figure 20 (n), on the whole surface of exposure element, after the formation ITO film, on the ITO film, carry out composition, form first pixel capacitors 41 and second pixel capacitors 43 and public electrode 9 with required form by sputtering method.Thereby, by said process, form the primary clustering of present embodiment LCD.
According to the method for making above-mentioned LCD, the method for the film by comprising conducting film and dielectric film in conjunction with known formation and known film method of moulding can be made LCD at an easy rate not causing under the situation that cost increases.
Shown in Figure 21 and 22, scan line drive circuit 51 is connected to the sweep trace 8 with one of composition pixel unit of matrix form distribution, and scanning-line signal inputs to pixel unit through sweep trace 8.Data line drive circuit 52 is connected to first and second data lines 22 and 24, and the data line signal with opposed polarity is fed to first and second data lines 22,24.Public electrode line drive circuit 53 is connected to public electrode wire 4, and common electric voltage is fed to pixel unit through public electrode wire 4.
Obviously find out from Figure 22, in the A of end, for the first and second data line end 22A and the data line end 22A and the 24A and the 24A that are connected to for another adjacent image point (on the right side of Figure 22) of a pixel unit.In a pixel unit and another neighboring pixels unit, each data line end 22A and 24A are corresponding to first data line 22 and second data line 24.The first data line end 22A has the drain line end 22a of coated ITO film and has the first data line end 22b of contact hole, and the second data line end 24A has drain line end 24a that is applied by the ITO film and the second data line end 24b with contact hole.
And, find out obviously that from Figure 22 end B is made up of the two couples of sweep trace end 8A of sweep trace 8 and the public electrode thread end 4A of public electrode wire 4, two pairs are connected with each other.The sweep trace end 8a that sweep trace end 8A disposes the sweep trace end 8a that is applied by the ITO film and has the contact hole part.The public electrode conductor part 4b that public electrode thread end 4A disposes the public electrode thread end 4a that is applied by the ITO film and has the contact hole part.
Next, the manufacture method by LCD among couple embodiment of reference Figure 23～25 is described, and wherein the overlapped layers that second interlayer dielectric 26 is made up of inoranic membrane and organic membrane in this method constitutes.In Figure 23～25, the part of being represented by label M-M, N-N and O-O corresponds respectively among Figure 22 along M-M, the sectional view of N-N and O-O.
At first, shown in Figure 23 (a), after on the total surface of first transparent substrates of making by glass etc. 6, forming the Cr film by sputtering method, utilize wet etching on the Cr film, to carry out composition, thereby form sweep trace end 8A and public electrode end 4A with required form.
Next, shown in Figure 23 (b), form first interlayer dielectric 10 by the CVD method on the whole surface of exposure layer, this film 10 serves as the gate insulating film that the stacked film be made up of SiOx film and SiNx film is made.Then, shown in Figure 23 (c), on the whole surface of exposure assembly, form a-Si film 12 and n+ type a-Si film 15 successively by plasma CVD method.
Next, shown in Figure 23 (d), utilization method at dried quarter is removed after a-Si film 12 and the n+ type a-Si film 15, carries out composition on the Cr layer, forms first data line 22 with required form.Next, shown in Figure 23 (e), on the whole surface of exposure assembly, form the SiNx film 45 that serves as passivating film by the CVD method.
Then, as shown in the figure,, on the whole surface of exposure layer, form the photosensitive organic dielectric film 46 that serves as second interlayer dielectric 26 by utilizing spin coating method.Next, shown in Figure 24 (g),, form contact hole 55A, 56A and 57A by photosensitive organic dielectric film 46 being exposed and developing.Then, shown in Figure 24 (h), do the method at quarter by utilizing, in SiNx film 45, form contact hole 55B, 56B and 57B,
Next, shown in Figure 25 (i), on the whole surface of exposure layer, form after the Mo film, utilize wet etching to carry out composition, form second data line 24 of the drain electrode 18 that is connected to the 2nd TFT 30 at the Mo film by sputtering method.Then, shown in Figure 25 (j), form on the whole surface of exposure layer by spin coating method and to serve as after the photosensitive organic dielectric film 47 of the 3rd interlayer dielectric 42, shown in Figure 25 (k), photosensitive organic dielectric film 47 is exposed and develops, form contact hole 55C, 56C and 57C.By said process, contact hole 55A to 55C, 56A to 55C and 57A to 57C are connected to each other, thereby form contact hole 55,56 and 57.
Next, shown in Figure 25 (l), on the whole surface of exposure layer, form after the ITO film by sputtering method, utilize wet etching on the Mo film, to carry out composition, form sweep trace end 8a, public electrode thread end 4A, the first data line end 22a and the second data line end 24a, all these ends are all applied by the ITO film.By said process, form end A and the end B of LCD in the present embodiment.
Thereby, in the 3rd embodiment, can be attained at the essentially identical effect of first embodiment.
In addition, according to the 3rd embodiment because first and second pixel capacitors 21,23 and public electrode 9 be formed on liquid crystal 3 near, therefore so transverse electric field can be applied on the liquid crystal 3 at an easy rate, and can reduce driving voltage.And, because can so can reduce the area of black-matrix layer 34, can further improve the aperture ratio like this with the electric leakage field of the public electrode 9 shadow data lines 22,24 that are formed on the superiors.In addition, make LCD at an easy rate with can not causing the cost increase.
The 4th embodiment
Figure 26 is the LCD structural plan figure according to fourth embodiment of the invention.Figure 27 is the sectional view along F-F line among Figure 26.Figure 28 is the sectional view along G-G line among Figure 26.The LCD structure of the 4th embodiment and the difference of first embodiment are that passivating film forms in the mode that covers two pixel capacitors.That is, in the LCD of the 4th embodiment, as shown in figure 27, the not only surface of first data line 22, and the surface of first and second pixel capacitors 21 and 23 all is passivated film 25 and covers.
According to the 4th embodiment, because being had the passivating film 25 of big thickness, first and second pixel capacitors 21 and 23 cover, so they are subjected to the influence of liquid crystal 3 very little.Therefore, the metal material that is used for the first and second pixel collectors 21 and 23 is not limited to the stable metal of liquid crystal 3, as Al, and Mo, Ti etc. are easy to be subjected to metal that liquid crystal 3 influences such as Cr etc. also can use.As a result, can be used as the range of choice expansion of the metal of pixel capacitors 21,23.
Thereby, in the 4th embodiment, can realize essentially identical effect with first embodiment.In addition, as mentioned above, can from the metal of wide region more, select metal as pixel capacitors 21,23.
The 5th embodiment
Figure 29 is the structural plan figure according to the LCD of fifth embodiment of the invention.Figure 30 is the sectional view along H-H line among Figure 29.Figure 31 is the sectional view along I-I line among Figure 26.The LCD structure of the 5th embodiment and the difference of first embodiment are to form dyed layer in the TFT substrate.That is, in the LCD of the 5th embodiment, blue-colored layer 35B roughly is formed on the center of passivating film 25, first and second pixel capacitors 21 and 23 and first data line 22 that passivating film 25 covers in the TFT substrate 1.Side at blue-colored layer 35B forms green coloring layer 35G, forms red colored layer 35R at the opposite side of blue-colored layer 35B.Boundary member at dyed layer forms black-matrix layer 34.Planarization film 36 forms in the mode that covers black-matrix layer 34, green coloring layer 35G, blue-colored layer 35B and red colored layer 35R.Formed second data line 24 with first data line 22 by second data line, 24 overlapping forms on planarization film 36, wherein planarization film 36, black-matrix layer 34, dyed layer 35B, 35G or 35R and passivating film 25 are clipped between first data line 22 and second data line 24.
According to present embodiment, in TFT substrate 1, form first data line 22, passivating film 25, dyed layer 35G, 35G or 35R, black-matrix layer 34, planarization film 36 and second data line 24, and therefore, different with the situation that forms dyed layer and black-matrix layer in the substrate 2 over there, when being placed on liquid crystal 3 between TFT substrate 1 and the opposite substrate 2 with the form that seals, do not need to consider the position deviation between TFT substrate 1 and the opposite substrate 2, and therefore, do not need to be provided with the border of covering.Can further improve the aperture ratio thus.
Thereby, in the 5th embodiment, can realize essentially identical effect with first embodiment.In addition, can also make the aperture than further improving.
The 6th embodiment
Figure 32 is the structural plan figure according to the LCD of sixth embodiment of the invention.Figure 33 is the sectional view along J-J line among Figure 32.Figure 34 is the sectional view along K-K line among Figure 32.The LCD structure of the 6th embodiment and the difference of first embodiment are the present invention is applied to TN type LCD.Promptly, in the LCD of the 6th embodiment, shown in Figure 32～34, first data line 22 that is formed on first interlayer dielectric 10 of TFT substrate 1 is connected to first pixel capacitors 21 through a TFT 29, and second data line 24 is formed by second data line, 24 overlapping modes with first data line 22, wherein passivating film 25 is clipped between first data line 22 and second data line 24, and second data line 24 is connected to second pixel capacitors 23.And first alignment films 27 forms in the mode that covers second data line 24.
On the other hand, form the public electrode of making by ITO 9 on the planarization film 36 of substrate 2 over there, and form second alignment films 37 in the mode that covers public electrode 9.
In addition to the above, the structure of the LCD among the 6th embodiment is basically the same as those in the first embodiment.Therefore, in Figure 32～34, to Fig. 1～4 in the counterpart of identical function adopt identical label, and therefore save description of them.
LCD according to the 6th embodiment, because the present invention is applied to the aperture than the TN type LCD that is better than IPS type LCD, and first data line 22 is covered by second data line 24, and passivating film 25 is clipped between first and second data lines 22 and 24 in the TFT substrate 1, so can improve the aperture ratio more.
Thereby, in the 6th embodiment, can be implemented in the essentially identical effect of first embodiment.In addition, as mentioned above,, improve so can make the aperture ratio obtain obstructing great virtue because the present invention is applied among the TN type LCD of the 6th embodiment.
Can find out obviously that the present invention is not limited to the foregoing description, under the prerequisite that does not break away from the scope of the invention and essence, can change and retrofit.For example, in the above-described embodiments, TFT is as the pixel unit of driving element to select to show, but driving element is not limited to TFT, can adopt two ends type element, as MIM (metal-insulating body-metal) type element, the diode-type element is regulated resistance (varister) type element.And in the above-described embodiments, the transparent substrates of being made by glass etc. is as the driving element substrate, but opaque substrate, also can use as polysilicon etc.In the case, LCD work is for reflective, and pixel capacitors work is reflecting electrode, and also serves as reflector plate.The material and their thickness that are used for dielectric film are an example, and any material and thickness can adopt, as long as they can be realized purpose of the present invention and satisfy condition.
Claims (13)
1. LCD comprises:
A plurality of pixel units, each pixel unit has sealing and is placed on liquid crystal between driving element substrate and the opposite substrate, wherein be formed with a plurality of drive areas element in the driving element substrate, described a plurality of drive areas element is by being formed by a plurality of first and second driving elements of same scanning line driving, and have first and second pixel capacitors, present pixel voltage from one of first and second data lines to one of first and second pixel capacitors by one of described first and second driving elements, present pixel voltage with aforementioned feed pixel voltage opposite polarity by from described first and second data lines another of in first and second driving elements another another in first and second pixel capacitors;
Wherein first and second data lines are arranged in such a way, and promptly second data line is arranged on first data line, and first data line covered by second data line, clip dielectric film between suprabasil first and second data lines of driving element.
2. LCD as claimed in claim 1 is characterized in that dielectric film is made of the overlapped layers of organic insulating film or inorganic insulating membrane or inorganic insulating membrane and organic insulating film.
3. LCD as claimed in claim 1 is characterized in that first and second pixel capacitors and public electrode are formed in the driving element substrate in the mode that insulate by interlayer dielectric each other.
4. LCD as claimed in claim 1 is characterized in that first pixel capacitors and second pixel capacitors and first data line are formed on the same dielectric film.
5. LCD as claimed in claim 1 is characterized in that first pixel capacitors and second pixel capacitors and second data line are oriented film and cover.
6. LCD as claimed in claim 1 is characterized in that first and second pixel capacitors in the different towards each other pixel unit of first and second data lines apply pixel voltage.
7. LCD as claimed in claim 1 is characterized in that forming dyed layer in the driving element substrate.
8. LCD as claimed in claim 3 is characterized in that public electrode contacts with liquid crystal by alignment films.
9. LCD as claimed in claim 1 is characterized in that first and second pixel capacitors and public electrode are formed on the same interlayer dielectric that covers second data line.
10. LCD as claimed in claim 9 is characterized in that public electrode is formed in the substrate of opposite.
11. LCD as claimed in claim 1 is characterized in that pixel unit drives by a horizontal reverse drive method, a vertical reverse drive method or some reverse drive method.
12. method of making LCD, wherein LCD comprises a plurality of pixel units, each pixel has by first and second driving elements of identical scanning line driving, and have first and second pixel capacitors, apply pixel voltage with opposed polarity from first and second data lines to each pixel capacitors by each first and second driving element respectively, method comprises:
The first step, the mode that is formed into the sweep trace of first interlayer dielectric covering afterwards on the transparent substrates with sweep trace forms first interlayer dielectric, and forms a semiconductor layer on first interlayer dielectric;
Second step, on semiconductor layer, form a drain electrode and a source electrode, thereby form first and second driving elements, and at first interlayer dielectric and be connected on first data line of drain electrode of one of first or second driving element and form first and second pixel capacitors;
The 3rd step: after the mode that covers driving element with second interlayer dielectric forms second interlayer dielectric, in second interlayer dielectric, form a contact hole, and mode overlapping by second data line with first data line, that clip second interlayer dielectric therebetween forms second data line that is connected to the drain electrode of another driving element through contact hole.
13. the method for manufacturing LCD as claimed in claim 12 is characterized in that as second interlayer dielectric, can being formed by the overlapped layers of organic insulating film or inorganic insulating membrane or inorganic insulating membrane and organic insulating film in the 3rd step.
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| CN 02127183 CN1215361C (en) | 2002-07-30 | 2002-07-30 | Liquid crsytal device and manufacture thereof |
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| CN 02127183 CN1215361C (en) | 2002-07-30 | 2002-07-30 | Liquid crsytal device and manufacture thereof |
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| TWI641897B (en) | 2006-05-16 | 2018-11-21 | 日商半導體能源研究所股份有限公司 | Liquid crystal display device |
| KR100688972B1 (en) * | 2006-06-01 | 2007-03-08 | 삼성전자주식회사 | Display device and manufacturing method thereof |
| KR101264693B1 (en) | 2006-06-30 | 2013-05-16 | 엘지디스플레이 주식회사 | IPS mode LCD and driving method thereof |
| JP5266573B2 (en) * | 2007-03-29 | 2013-08-21 | Ｎｌｔテクノロジー株式会社 | Liquid crystal display |
| CN101916010A (en) * | 2010-07-19 | 2010-12-15 | 河北工业大学 | Fast response IPS-VA liquid crystal display with high transmissivity |
| CN102629028A (en) * | 2011-08-26 | 2012-08-08 | 京东方科技集团股份有限公司 | In-plane switching liquid crystal display and manufacturing method thereof |
| CN102799035B (en) * | 2012-05-04 | 2016-04-13 | 京东方科技集团股份有限公司 | A kind of array base palte, liquid crystal panel and display device |
| US8928829B2 (en) * | 2013-05-31 | 2015-01-06 | Innolux Corporation | Display device |
| CN103676355A (en) * | 2013-12-09 | 2014-03-26 | 京东方科技集团股份有限公司 | Array substrate, driving method thereof, liquid crystal display panel and liquid crystal display device |
| CN104730783A (en) | 2015-04-10 | 2015-06-24 | 合肥京东方光电科技有限公司 | Array substrate, drive method thereof and display device |
| CN110189624A (en) * | 2018-02-23 | 2019-08-30 | 群创光电股份有限公司 | Show equipment |
| CN109031816B (en) * | 2018-09-21 | 2021-08-27 | 合肥鑫晟光电科技有限公司 | Array substrate, control method and display device |
| TWI685828B (en) * | 2019-01-03 | 2020-02-21 | 友達光電股份有限公司 | Display apparatus |
| CN114326232A (en) * | 2021-12-30 | 2022-04-12 | 广州华星光电半导体显示技术有限公司 | Array substrate, manufacturing method thereof, display panel and display device |
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