CN120826501A - 坩埚、使用其的β型三氧化二镓单晶衬底的制造方法以及β型三氧化二镓单晶衬底 - Google Patents

坩埚、使用其的β型三氧化二镓单晶衬底的制造方法以及β型三氧化二镓单晶衬底

Info

Publication number
CN120826501A
CN120826501A CN202380095237.XA CN202380095237A CN120826501A CN 120826501 A CN120826501 A CN 120826501A CN 202380095237 A CN202380095237 A CN 202380095237A CN 120826501 A CN120826501 A CN 120826501A
Authority
CN
China
Prior art keywords
single crystal
crucible
type
film
crystal substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380095237.XA
Other languages
English (en)
Chinese (zh)
Inventor
羽木良明
石川幸雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of CN120826501A publication Critical patent/CN120826501A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202380095237.XA 2023-06-07 2023-06-07 坩埚、使用其的β型三氧化二镓单晶衬底的制造方法以及β型三氧化二镓单晶衬底 Pending CN120826501A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/021100 WO2024252544A1 (ja) 2023-06-07 2023-06-07 坩堝、それを用いたベータ型三酸化二ガリウム単結晶基板の製造方法、およびベータ型三酸化二ガリウム単結晶基板

Publications (1)

Publication Number Publication Date
CN120826501A true CN120826501A (zh) 2025-10-21

Family

ID=93795545

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380095237.XA Pending CN120826501A (zh) 2023-06-07 2023-06-07 坩埚、使用其的β型三氧化二镓单晶衬底的制造方法以及β型三氧化二镓单晶衬底

Country Status (4)

Country Link
JP (1) JPWO2024252544A1 (cg-RX-API-DMAC7.html)
CN (1) CN120826501A (cg-RX-API-DMAC7.html)
TW (1) TW202507090A (cg-RX-API-DMAC7.html)
WO (1) WO2024252544A1 (cg-RX-API-DMAC7.html)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH042687A (ja) * 1990-04-18 1992-01-07 Fujikura Ltd 酸化物単結晶育成用るつぼ
JP3639147B2 (ja) * 1999-06-02 2005-04-20 日本電信電話株式会社 単結晶育成用るつぼ
JP2016117606A (ja) * 2014-12-19 2016-06-30 株式会社タムラ製作所 Ｇａ２Ｏ３系単結晶の育成方法、及び坩堝
JP7155968B2 (ja) * 2018-12-04 2022-10-19 Tdk株式会社 単結晶育成用ルツボ及び単結晶製造方法
US11674239B2 (en) * 2020-02-27 2023-06-13 Fujikoshi Machinery Corp. Gallium oxide crystal manufacturing device
CN114318503A (zh) * 2021-12-30 2022-04-12 陕西旭光晶体科技有限公司 氧化嫁晶体用的铂铱合金坩埚以及制备方法

Also Published As

Publication number Publication date
TW202507090A (zh) 2025-02-16
JPWO2024252544A1 (cg-RX-API-DMAC7.html) 2024-12-12
WO2024252544A1 (ja) 2024-12-12

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