CN1206724C - Method for mfg. mask type ROM in high density planar unit mode - Google Patents
Method for mfg. mask type ROM in high density planar unit mode Download PDFInfo
- Publication number
- CN1206724C CN1206724C CN02101553.8A CN02101553A CN1206724C CN 1206724 C CN1206724 C CN 1206724C CN 02101553 A CN02101553 A CN 02101553A CN 1206724 C CN1206724 C CN 1206724C
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- CN
- China
- Prior art keywords
- high density
- mask
- unit mode
- layer
- planar unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 46
- 150000002500 ions Chemical class 0.000 claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 claims abstract description 21
- 239000002019 doping agent Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 13
- 238000002513 implantation Methods 0.000 claims abstract description 6
- 230000003647 oxidation Effects 0.000 claims description 14
- 238000007254 oxidation reaction Methods 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000004576 sand Substances 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 14
- 239000010703 silicon Substances 0.000 abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 13
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract description 2
- 238000002955 isolation Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 239000000428 dust Substances 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 phosphonium ion Chemical class 0.000 description 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN02101553.8A CN1206724C (en) | 2002-01-09 | 2002-01-09 | Method for mfg. mask type ROM in high density planar unit mode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN02101553.8A CN1206724C (en) | 2002-01-09 | 2002-01-09 | Method for mfg. mask type ROM in high density planar unit mode |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1431705A CN1431705A (en) | 2003-07-23 |
CN1206724C true CN1206724C (en) | 2005-06-15 |
Family
ID=4739562
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN02101553.8A Expired - Fee Related CN1206724C (en) | 2002-01-09 | 2002-01-09 | Method for mfg. mask type ROM in high density planar unit mode |
Country Status (1)
Country | Link |
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CN (1) | CN1206724C (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102033971B (en) * | 2009-09-29 | 2012-12-26 | 中芯国际集成电路制造(上海)有限公司 | Design method of circuit patterns and rapid thermal annealing method of semiconductor device |
CN102683290A (en) * | 2011-03-08 | 2012-09-19 | 无锡华润上华半导体有限公司 | ROM (read only memory) device and manufacturing method thereof |
-
2002
- 2002-01-09 CN CN02101553.8A patent/CN1206724C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1431705A (en) | 2003-07-23 |
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Legal Events
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111121 Address after: 201203 No. 18 Zhangjiang Road, Shanghai Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 No. 18 Zhangjiang Road, Shanghai Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050615 Termination date: 20190109 |
|
CF01 | Termination of patent right due to non-payment of annual fee |