CN1201141C - Manufacturing method of electronic microscope fixed point test piece - Google Patents
Manufacturing method of electronic microscope fixed point test piece Download PDFInfo
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- CN1201141C CN1201141C CNB021298262A CN02129826A CN1201141C CN 1201141 C CN1201141 C CN 1201141C CN B021298262 A CNB021298262 A CN B021298262A CN 02129826 A CN02129826 A CN 02129826A CN 1201141 C CN1201141 C CN 1201141C
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- test piece
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- wafer fragment
- fixed point
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Abstract
The present invention discloses a method for preparing electron microscope fixed point test pieces, which comprises: firstly, a test piece grinder which comprises a test piece fixing seat is provided; a wafer segment to be tested is provided and has a primary grinding end, a secondary grinding end and a fixed point to be tested, wherein the fixed point is positioned between the primary grinding end and the secondary grinding end; the wafer segment to be tested is pasted on the test piece fixing seat; the primary grinding end is ground by the test piece grinder to form a primary grinding cross section, wherein the distance between the primary grinding cross section and the fixed point to be tested is used as a primary preset distance; the wafer segment to be tested is disassembled from the test piece fixing seat; a slide glass fixedly connected with the primary grinding cross section face to face is provided; the slide glass and the wafer segment to be tested are fixed to a shim to form a stacking piece; the stacking piece is pasted on the test piece fixing seat; the secondary end is ground by the test piece grinder to form a secondary grinding cross section, wherein the distance between the secondary grinding cross section and the fixed point to be tested is used as a secondary preset distance.
Description
Technical field
The present invention is about the fault analysis in the manufacture of semiconductor (failure analysis) field, especially the method for making that refers to a kind of electronic microscope fixed point test piece, can avoid the use of irretrievable jig for grinding, and can save the specimen preparation cost, reduce the time of making test piece.
Background technology
Along with the progress of IC processing procedure, Electron Microscopy is also being played the part of important role in the fault analysis field, wherein again with transmission electron microscope (Transmission Electron Microscopy, TEM) analysis tool of using always the most.According to the signal that electronics and material effect are produced, the data of transmission electron microscope analysis detecting mainly can be divided into three kinds: 1. the direct projection electronics (transmitted electron) or elastic scattering electrons (the elastic scattering electron) imaging of acquisition penetrating material; 2. make the electron diffraction pattern (Diffraction Pattern, DP), to do the research of micro organization and crystal structure; 3. collocation X-energy spectrum analyser (EDS) or electron energy scatter and disappear, and (Electron Energy Loss Spectroscope EELS) does the chemical analysis analysis to analyser.Improvement along with instrument, analysis mode electron microscope (analytical electron microscope) can be integrated by electron microscope (high resolution electron microscope) with high-resolution at present, except the penetration type electron imaging, still can make diffraction pattern (the NanoBeam Diffraction of atomic zonule (～10 dust), NBD), with polymerization electron beam diffraction pattern (Convergent BeamDiffraction, CBD), have diversified ability, almost can satisfy the analyze demands of each aspect.
The instrument system of transmission electron microscope mainly can be divided into four partly: 1. electron gun-have tungsten filament, LaB6, three kinds of an emission-type (similar to sweep electron microscope); 2. electromagnetic lens system-comprise condenser (condenser lens), object lens (objective lens), intermediate mirror (intermediate lens) and projection lens (projective lens); 3. test piece chamber-test piece pedestal (sample holder) can divide two classes: (side entry) inserted in the side and (top entry) inserted in the top; 4. the fluorescent screen or the photographic negative of the coating of image detecting and register system-ZnS/CdS.
The view mode of transmission electron microscope generally is divided into two kinds of plane formula and cross section types.It promptly is that electron beam is made forward perpendicular to wafer surface and observed that so-called plane formula is observed, be commonly used to study element layout, material feature or do the measurement of size; Cross section type then is that the vertical stratification of wafer is made lateral observation, is used for measuring the thickness of layers of material, the mode and the observation interfacial structure (interface structure) of research material stacked architecture more.The method of test piece preparation is relevant with research purpose and view mode.For the observation of routine is used, usually the mode of wafer grinding has two kinds, the chemical solution etching method is adopted in the plane test piece, the xsect test piece adopts ion muller (ion miller) erosion thin, if but accurate fixed point observation use, the plane formula test piece also can utilize ion muller erosion thin, and (Focus Ion Beam, it is thin FIB) to do the erosion of regional area for the then available focused ion beam microscope of cross section type test piece.
Known transmission electron microscope analysis has its restriction, and shortcoming comprises: 1. the size of test piece must be below 3mm; 2. based on the limited penetration power of electron beam, common optimal observation thickness is between the 500-1000 dust; 3. the difficulty that is limited to the test piece preparation is quite high, and observable zone is usually in 100mm; 4. in some cases, the test piece preparation is difficulty very, success ratio reduces relatively, for example: the cross-sectional analysis of the research of crystal grain border seal structure (chip sealing), single structure cell fault (single bit failure) or the cross-sectional analysis of single contact hole (contact hole) etc.
In addition, when utilizing known test piece muller to make test piece, the Next-1 type of Sagitta company fixed point muller for example, often need by muller manufacturer special tool, every grinding one test piece of this tool will consume and can't reclaim use, therefore need die sinking voluntarily to order work in addition, generally can't help former muller manufacturer provides.Thus, cause the increase of specimen preparation cost.And, when using above-mentioned tool to prepare test piece,, and need to consume more analysis time because step is complicated.
Summary of the invention
In view of the above, fundamental purpose of the present invention need not use special tool, but quick Fabrication goes out test piece in that a kind of electron microscope test piece method for making of novelty is provided, and saves time and cost.
According to purpose of the present invention, preferred embodiment of the present invention discloses the method for making of a kind of electron microscope (TEM) fixed point test piece.One test piece muller at first is provided, includes a test piece stationary installation (holder); One wafer fragment to be measured (segment) is provided, and it has one first abrasive tip, one second abrasive tip and a fixed point to be measured between this first abrasive tip and this second abrasive tip; Should wafer fragment to be measured stick on this test piece stationary installation; Utilize this test piece muller to grind this first abrasive tip, produce one first and grind section, wherein this first distance of grinding section and this fixed point to be measured is one first preset distance; Should wafer fragment to be measured take off by this test piece stationary installation; Provide a slide glass to fixedly connected with this first grinding section face-to-face; This slide glass and this wafer fragment to be measured are fixed on the pad, form a pile lamination; This is piled up sheet sticks on this test piece stationary installation; And utilize this test piece muller to grind this second abrasive tip, and produce one second and grind section, wherein this second distance of grinding section and this fixed point to be measured is one second preset distance; One becket is fixed on this second grinding section; And this wafer fragment to be measured that will be fixed with this becket is piled up the sheet from this and is separated.
Major advantage of the present invention is and can saves specimen preparation cost and step simultaneously in the use of the special tool of avoiding prior art.
In order to allow above-mentioned and other purpose, feature and the advantage of the present invention can be clearer and more definite understandable, a preferred embodiment cited below particularly cooperates appended diagram, elaborates.
Description of drawings
Fig. 1 to Fig. 6 is the side-looking enlarged diagram of the present invention's one electronic microscope fixed point test piece method for making;
Fig. 7 is the special tool schematic appearance in the prior art.
Illustrated symbol description
Section is ground in 10 test pieces 11
12 grind section 15 slide glasses
16 pads, 20 copper rings
30 pedestals
Embodiment
See also Fig. 1 to Fig. 6, Fig. 1 to Fig. 6 prepares the method schematic side view of an electronic microscope fixed point test piece for the present invention.The electron microscope of indication can be scanning type electron microscope (TEM) or transmission electron microscope (SEM) herein, and fixed point test piece is specially adapted to the electron microscope observation mode of cross section type.Step major part described in the following preferred embodiment of the present invention is prepared in a SagittaNext-1 type board.Sagitta Next-1 type board includes a grinding pad and at least one test piece holder (holder), be used for sticking together fix one to be ground or grind in the test piece semi-manufacture.Because Sagitta Next-1 type board is industry specimen preparation board commonly used when carrying out the IC fault analysis, so its detail structure and principle of operation are not given unnecessary details in addition at this.Similar principle of operation about Sagitta Next-1 type board can be with reference to United States Patent (USP) the 5th, 741, and No. 171, exercise question is " PrecisionPolishing System ".
At first, as shown in Figure 1, be cut into the test piece 10 of each about about 1 centimeter size of length and width with one in advance by wafer cutting wafer fragment to be measured down, wherein, cross center representative is the fixed position to be measured that institute's desire is ground arrival in Fig. 1.Then, utilize hot melt adhesive that test piece 10 is sticked on the test piece holder (specimen holder) of SagittaNext-1 type muller.After test piece is fixing, utilize the grinding pad of Sagitta Next-1 type muller to carry out grinding first time immediately, an end of test piece is ground to distance center about 5 to 10 microns places that fix a point.That is making the distance of grinding section 11 and center fixed point among Fig. 2 is 5 to 10 microns.Then, utilize the mode of heating again, will take off the test piece 10 of originally being fixed on the holder after the hot melt adhesive fusion, the result is as shown in Fig. 2.The temperature of general heating is between 40 ℃ to 60 ℃.In known specimen preparation skill, these test piece semi-manufacture of finishing end grinding can be pasted to the tool of a particular design, then are milled to desired thickness together with tool again, and this special tool is as shown in Figure 7.As previously mentioned, this tool belongs to consumptive material, because work is ordered in die sinking in addition, therefore makes the cost of making test piece increase.
So the present invention gives up special tool, tool holder and the test piece method for making of former factory, another set of more simple and feasible test piece preparation method and develop.As shown in Figure 3, the present invention is after taking off test piece 10 on by holder with type of heating, do not need test piece 10 is pasted to special tool, the substitute is with a slide glass 15 and utilize hot melt adhesive, for example hot wax (hot wax), paste with grinding section 11 subtends of test piece 10, then the test piece 10 that will paste again and slide glass 15 utilize hot melt adhesive to paste to a pad 16 equally.In preferred embodiment of the present invention, slide glass 15 and pad 16 can be a silicon materials thin slice, for example use the wafer of throwing aside (dummy wafer).Yet slide glass 15 and pad 16 can also use other nonmetallic materials, and for example glass or other grinding rate are near the material of test piece 10.
After treating that hot melt adhesive solidifies, the slide glass 15 that then will stick on the pad 16 sticks on aforesaid test piece holder (employed test piece holder when grinding with the first time) with hot melt adhesive.After fixing, utilize the grinding pad of Sagitta Next-1 type muller to carry out second time immediately and grind, the other end of test piece 10 is ground to distance center fixes a point to form a grinding section 12 in about 5 to 10 microns places.At this moment, the thickness of test piece 10 (that is the distance between grinding section 11 and the grinding section 12) is about about 10 to 20 microns, and this thickness can optionally be done different adjustment.Then, with ground test piece 10 together with slide glass 15 and pad 16 simultaneously by taking off on the test piece holder, the result is as shown in Figure 4.
As shown in Figure 5, then utilize AB glue or Instant cement (fast curing glue) to stick on the grinding section 12 of test piece 10 copper ring 20.Be noted that the scope that AB glue or Instant cement are smeared can only be fixed in the test piece 10 20 of copper rings grinding section 12.After treating that AB glue or Instant cement solidify, the mode of utilizing heating or soaking acetone is separated the test piece 10 that is fixed with copper ring 20 from slide glass 15 and pad 16 immediately.Again copper ring 20 is fixed on the pedestal 30 in upright mode at last, promptly finishes and carry out the thin test piece 10 preparation actions before of a focused ion beam (FIB) erosion.Because the thin fabrication steps of follow-up focused ion beam erosion is identical with prior art, therefore repeats no more.
Electronic microscope fixed point test piece preparation method of the present invention can be organized into following six steps substantially:
Step 1: will originally be cut into each about 1 centimeter test piece size of length and width from the test sample that send that wafer cuts down, and stick in again on the holder of Sagitta Next-1 type muller;
Step 2: test piece is ground to apart from 5 to 10 microns places of fixed position with Sagitta Next-1 type muller, then heats test piece is taken off from holder;
Step 3: the grinding section and a dummy wafer of test piece are joined face-to-face with hot melt adhesive, again test piece is sticked on another wafer pad;
Step 4: will pile up on the holder that the test piece of handling well sticks in Sagitta Next-1 type muller, and test piece will be ground to apart from 5 to 10 microns places of fixed position again, heating then will be piled up test piece and be taken off from holder;
Step 5: with AB glue one copper ring is fixed in the test piece, and test piece is separated with dummy wafer and wafer pad with type of heating or alternate manner; And
Step 6: the copper ring that will be fixed in the test piece is holded up, and is fixed on the dummy wafer pedestal with hot melt adhesive, prepares to carry out the thin processing procedure of focused ion beam (FIB) erosion.
In brief, major technique of the present invention is characterised in that above-mentioned steps three to step 5 and prior art differs widely.The present invention utilizes a slide glass 15 and a pad 16 can replace the special tool of prior art, obtains fast and the method for making of saving the specimen preparation cost.
The above only is preferred embodiment of the present invention, and all equalizations of being done according to the present patent application claim change and modify, and all should belong to the covering scope of patent of the present invention.
Claims (12)
1. the method for making of a transmission electron microscope fixed point test piece includes:
One test piece muller is provided, includes a test piece stationary installation;
One wafer fragment to be measured is provided, and it has one first abrasive tip, one second abrasive tip and a fixed point to be measured between this first abrasive tip and this second abrasive tip;
Should wafer fragment to be measured stick on this test piece stationary installation;
Utilize this test piece muller to grind this first abrasive tip, produce one first and grind section, wherein this first distance of grinding section and this fixed point to be measured is one first preset distance;
Should wafer fragment to be measured take off by this test piece stationary installation;
Provide a slide glass to fixedly connected with this first grinding section face-to-face;
This slide glass and this wafer fragment to be measured are fixed on the pad, form a pile lamination;
This is piled up sheet sticks on this test piece stationary installation;
Utilize this test piece muller to grind this second abrasive tip, produce one second and grind section, wherein this second distance of grinding section and this fixed point to be measured is one second preset distance;
One becket is fixed on this second grinding section; And
This wafer fragment to be measured that is fixed with this becket piled up the sheet from this separate.
2. method for making as claimed in claim 1 is characterized in that: this wafer fragment to be measured is cut into each size of 1 centimeter of length and width.
3. method for making as claimed in claim 1 is characterized in that: the Next-1 type test piece muller that this test piece muller is a Sagitta company.
4. method for making as claimed in claim 1 is characterized in that: this first preset distance is 5 to 10 microns.
5. method for making as claimed in claim 1 is characterized in that: this second preset distance is 5 to 10 microns.
6. method for making as claimed in claim 1 is characterized in that: the method that will this wafer fragment to be measured sticks on this test piece stationary installation is utilized hot melt adhesive.
7. method for making as claimed in claim 1 is characterized in that: this slide glass utilizes hot melt adhesive with the method that this first grinding section is fixedlyed connected face-to-face.
8. method for making as claimed in claim 1 is characterized in that: this slide glass is a discarded wafer fragment.
9. method for making as claimed in claim 1 is characterized in that: this pad is a discarded wafer fragment.
10. method for making as claimed in claim 1 is characterized in that: this becket is a copper ring.
11. method for making as claimed in claim 1 is characterized in that: this becket is fixed in this second method of grinding on the section utilizes AB glue.
12. method for making as claimed in claim 1 is characterized in that: this wafer fragment to be measured that will be fixed with this becket is piled up method utilization heating of separating the sheet or the mode of soaking acetone from this.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021298262A CN1201141C (en) | 2002-08-15 | 2002-08-15 | Manufacturing method of electronic microscope fixed point test piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021298262A CN1201141C (en) | 2002-08-15 | 2002-08-15 | Manufacturing method of electronic microscope fixed point test piece |
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| Publication Number | Publication Date |
|---|---|
| CN1475786A CN1475786A (en) | 2004-02-18 |
| CN1201141C true CN1201141C (en) | 2005-05-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021298262A Expired - Lifetime CN1201141C (en) | 2002-08-15 | 2002-08-15 | Manufacturing method of electronic microscope fixed point test piece |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102466579B (en) * | 2010-11-03 | 2013-11-06 | 中芯国际集成电路制造(上海)有限公司 | Preparation method for TEM sample |
| CN102466577A (en) * | 2010-11-03 | 2012-05-23 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of physical detection sample |
| CN103698178A (en) * | 2013-12-12 | 2014-04-02 | 中国航空工业集团公司北京航空材料研究院 | Preparation method for thin-film sample for high-resolution transmission electron microscope |
| CN104819876B (en) * | 2015-04-07 | 2017-11-28 | 湖北大学 | A kind of film sample preparation method for transmission electron microscope original position added electric field and stress |
| CN105021970A (en) * | 2015-07-30 | 2015-11-04 | 厦门乾照光电股份有限公司 | LED failure analysis dissecting apparatus and dissecting method |
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2002
- 2002-08-15 CN CNB021298262A patent/CN1201141C/en not_active Expired - Lifetime
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| CN1475786A (en) | 2004-02-18 |
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