CN1199354C - Integrated VCO switch - Google Patents
Integrated VCO switch Download PDFInfo
- Publication number
- CN1199354C CN1199354C CNB008128405A CN00812840A CN1199354C CN 1199354 C CN1199354 C CN 1199354C CN B008128405 A CNB008128405 A CN B008128405A CN 00812840 A CN00812840 A CN 00812840A CN 1199354 C CN1199354 C CN 1199354C
- Authority
- CN
- China
- Prior art keywords
- voltage controlled
- controlled oscillator
- switching device
- device shifter
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
- H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
- H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J5/00—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner
- H03J5/24—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner with a number of separate pretuned tuning circuits or separate tuning elements selectively brought into circuit, e.g. for waveband selection or for television channel selection
- H03J5/242—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner with a number of separate pretuned tuning circuits or separate tuning elements selectively brought into circuit, e.g. for waveband selection or for television channel selection used exclusively for band selection
- H03J5/244—Discontinuous tuning; Selecting predetermined frequencies; Selecting frequency bands with or without continuous tuning in one or more of the bands, e.g. push-button tuning, turret tuner with a number of separate pretuned tuning circuits or separate tuning elements selectively brought into circuit, e.g. for waveband selection or for television channel selection used exclusively for band selection using electronic means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L2207/00—Indexing scheme relating to automatic control of frequency or phase and to synchronisation
- H03L2207/06—Phase locked loops with a controlled oscillator having at least two frequency control terminals
Abstract
The invention relates to a VCO (100, 130) integrated in a radio ASIC, wherein a switch (180, 60, 70, 80, 90) is arranged for switching the centre frequency of the VCO between arbitrary frequency bands to be able to perform band switching and/or frequency tuning. In a preferred embodiment, the switch switches the centre frequency of the VCO (100, 130) between the DCS-band and the PCS-band. Thus, instead of having one VCO for the DCS-band and another one for the PCS-band, the invention uses only one VCO for both bands saving a lot of valuable space on the ASIC.
Description
Technical field
The present invention relates to a kind of integrated VCO of preferred use in radio ASIC.
Background technology
In radio ASIC, need a stable frequency that in frequency, moves up and down information.Usually, unsettled VCO (voltage controlled oscillator) is locked in a highly stable reference frequency,, then can produces this stable frequency as 13MHz by using PLL (phase-locked loop) circuit.In Fig. 1, a kind of PLL-circuit is disclosed, it comprises that phase discriminator 150, filter and amplifier 160, VCO and division factor are 72 frequency divider.PLL makes input I, the II of phase discriminator keep identical signal frequency as possible.For instance, if the input I of phase discriminator has the reference frequency of 13MHz (being the 13MHz-clock in phone), another input II of phase discriminator 150 then has identical frequency as far as possible so.This means that VCO must move under the frequency of 72*13MHz=936MHz, this is because this frequency divider comes splitting signal by VCO with factor 72.Therefore, the output signal III of VCO is the signal of a highly stable 936MHz, and it can be used in the GSM-frequency band.
Because the size of portable terminal is constantly reducing, thereby have to increasing element is integrated on the same ASIC (application-specific integrated circuit (ASIC)).The last integrated VCO of ASIC will cover the major part in ASIC district, and because this regional cost major part that is the ASIC total cost, thereby it is reduced is very important.Will be appreciated that up to this point, the inductance coil in the resonant circuit of VCO always is outside the ASIC circuit and carries out that this is because can not make extraordinary inductance coil on this chip.Thereby the present invention will be referred to a new invention field, promptly how to be implemented in the whole VCO of the inductance coil that comprises resonator in the ASIC-circuit.A problem that can occur when being integrated into VCO on the ASIC is: the outer member that does not have can be used for finely tuning the VCO frequency.Therefore, the VCO tuning range must be even as big as covering all component expansion and variations in temperature.When increasing the tuning range of VCO, the phase noise of VCO will increase, the bad noiseproof feature of this expression VCO.Another problem is: if cover a big frequency band, then must use two independently VCO, will inevitably take the big quantity space on the radio ASIC like this.Purpose of the present invention will address these problems exactly.
Summary of the invention
Above-mentioned purpose can realize that one of them switch is arranged to and is switching the frequency of VCO arbitrarily between the frequency band, switches and/or frequency tuning thereby can carry out frequency band by the preferred integrated VCO that uses in radio ASIC.
Different with the VCO of the VCO that uses a DCS-frequency band in the prior art and another PCS-frequency band, the present invention only uses a VCO being used for two frequency bands, thereby has saved a large amount of useful spaces on ASIC.
Another benefit that can see from the present invention is: the band switch of VCO is by software control, and this means does not need artificial fine setting.This fine setting can be carried out by mobile phone itself.
Switch list of the present invention understands to have the importance of diode (diode that promptly has big transit time) at a slow speed.This can utilize collector-base junction to realize in bipolar processing procedure.
Disclose another preferred embodiment of this VCO switch, wherein this switch is connected when diode forward is setovered, and closes when diode reverse biased, thereby has played the effect of variable capacitance diode.
In a claimed preferred embodiment of the present invention, for VCO has disposed several switches, with the switching between the frequency band that can control arbitrary number.
In a claimed embodiment of the present invention, the switch of VCO can be by logical circuit by controlling such as the wireless communication link of Bluetooth (bluetooth).
In another embodiment of the present invention, switch and VCO integrate.
Description of drawings
Now, will describe the present invention in more detail with reference to the preferred embodiments of the present invention, the present invention only is that the form with example provides, and diagram in the accompanying drawings, wherein:
Figure 1 shows that the VCO-function among the PLL;
Fig. 2 discloses the schematic diagram of handoff functionality of the present invention;
Figure 3 shows that the embodiment of the VCO among the present invention; And
Figure 4 shows that a preferred embodiment of the switch among the present invention.
Embodiment
The embodiment that will describe relates to a kind of circuit with reference to the accompanying drawings, is used to switch the centre frequency of VCO, switches or frequency tuning so that can carry out frequency band in such as the integrated radio circuit of radio ASIC.Certainly, will be appreciated that, among any VCO in other circuit that handoff technique of the present invention can be applicable to have nothing to do with radio.Be stressed that also the present invention relates to the co-pending application that is entitled as " dual band VCO " and " stacking-type VCO resonator ", its applicant is: Telefonaktiebolaget LM Ericsson, invention is artificial: Magnus Nilsson.These applications " dual band VCO " and " stacking-type VCO resonator " are hereby incorporated by reference respectively.
Fig. 2 briefly discloses the handoff functionality of the resonator 100 of integrated VCO.Coil 10,20 is in parallel with capacitor 30, variable capacitance diode 40,50 and switch 60,70 and electric capacity 80,90.When switching device 60,70 was connected, capacitor 80,90 was connected with resonator, this means that this resonator has higher electric capacity, and then the lower frequency of generation.On the contrary, when switching device disconnected, electric capacity 80,90 and resonator disconnected, and this means that this resonator has lower electric capacity, and then produce higher frequency.Therefore, the switching device among the present invention is used to frequency is moved to another frequency band arbitrarily from any frequency band.
In a preferred embodiment, the travel frequency between DCS-frequency band (1800-1900MHz) and PCS-frequency band (1900-2000MHz) of the switching device among the VCO.This switching device also is used to finely tune the centre frequency of VCO.This means: if the VCO frequency has departed from centre frequency a little, switch 60,70 and electric capacity 80,90 will be finely tuned the VCO frequency so, make it return to centre frequency.
In prior art, a VCO is used for the DCS-frequency band, and another VCO is used for the PCS-frequency band.And in the present invention, only use a VCO to control DCS-frequency band and PCS-frequency band.The switch 60,70 of integrated VCO and electric capacity 80,90 carry out external software control by a logical circuit by data/address bus in radio ASIC.In this case, no matter be that radio ASIC or logical circuit all are arranged on the same PCB (printed circuit board (PCB)) of mobile phone.Will be appreciated that ASIC and logical circuit are configurable on any one e-machine such such as computer.ASIC also can be by electric equipment independently by controlling based on wired or wireless communication link.For example, an external equipment can use communication protocol Bluetooth to come the control switch device to carry out frequency band switching or the fine setting of the VCO among the ASIC.
As can be seen from the above, if the centre frequency of VCO can be switched, then the tuning range of identical VCO can reduce.This noiseproof feature and VCO that will improve VCO can cover a plurality of frequency bands.
As can be seen from Figure 2, ideal situation is, uses switch 60,70 that capacitor 80,90 is switched to resonator, and its impedance changes between the zero-sum infinity.Importantly, the on-off impedance ratio is bigger, thereby can not reduce the tuning range of VCO and can not reduce the Q-value of resonator.This Q-value is defined as the reactive power and the merchant who gets involved power of resonator.
Fig. 3 discloses a kind of according to integrated VCO 130 of the present invention.As can be seen from Figure 3, this VCO comprises differential levels 140 (active part) resonator 120.This resonator comprises inductance coil 110, coupling capacitor 210,240, resonator 170 and variable capacitance diode 220,230.Variable capacitance diode is defined as voltage controlled capacitor.
Fig. 4 disclose with Fig. 2 in switch 60,70 and an embodiment of electric capacity 80 and 90 corresponding switches of the present invention.In a preferred embodiment of the invention, diode 60,70 is used as switch element at a slow speed, and this can be as seen from Figure 4.Using at a slow speed, diode means that it has long transit time.This diode occurs in the bipolar processing procedure in collector-base junction usually.
Under conducting state, diode the 60, the 70th, forward bias, the electric capacity of diode be directly proportional by the electric current of diode and the transit time of diode.In order to obtain big electric capacity, the product of electric current and transit time must be big.In order to reduce the current consumption of switch 60,70 and electric capacity 80 and 90, it is very important that diode has big transit time.The series capacitance of diode must be low, so that can not reduce the Q-value of resonator.Big diode area can obtain low series capacitance.
Under off-state, diode the 60, the 70th, reverse bias, and diode has played the effect of variable capacitance diode.The electric capacity of variable capacitance diode is directly proportional with area and this area must be little, so that the electric capacity of variable capacitance diode is far smaller than coupling capacitance.
When selecting the diode size, to trade off to the requirement of two region areas.
Switch 180,60,70 among Fig. 4 and electric capacity 80,90 disclose an embodiment of the handoff functionality of the VCO130 among the radio ASIC, in the laboratory it have been carried out successfully experiment.Integrated switch 180 comprises control section 190 (differential levels) and switch sections 200 in radio ASIC.This band switch is by coupling capacitance 80,90 and diode 60,70 expressions, and they can carry out external control respectively by Bsel and Bsel_bar by a logical circuit.Therefore, the signal on these nodes (Bsel Bsel_bar) will determine the switching of the centre frequency of VCO shown in Figure 3.The logical circuit that disposes outside radio ASIC (base band ASIC, not shown) is by being added to the predetermined voltage of a special use control switch 180,60,70 and electric capacity 80,90 on these nodes.Usually, in ASIC or the switch that is integrated among the VCO carry out software control by described logical circuit by data/address bus.Node Out and Out_bar in the node Out of switch shown in Figure 4 and the Out_bar difference connection layout 3.According to control voltage, by external circuit, through the Node B sel and the Bsel_bar of switch, predetermined electric capacity 80,90 will be switched on or switched off by node Out and the Out_bar in parallel with the resonator 120 of the VCO130 that changes the VCO frequency band.
By labor Fig. 4 as can be seen, employed is a kind of bipolar band switch circuit.When band switch is connected, electric current will flow out from transistor Q2 and Q3, respectively through diode 60,70 and through transistor Q4.Now, band switch electric capacity is lowered by coupling capacitor 80,90 controls and VCO frequency.
When band switch disconnected, Q1 started, and it is used to make N1 near Vcc.Resistance R 1, R2 and R3 make N2 and N3 ground connection, this means diode the 60, the 70th, reverse bias.Now, the electric capacity of band switch is controlled by varactor capacitance (diode 60,70), thereby the VCO frequency is increased.High performance integrated band switch is implemented in VCO by this way, so just can carry out frequency band and switch and/or frequency tuning.
In a preferred embodiment, VCO is integrated on the radio ASIC that disposes in the portable terminal.Switch 180,60,70 and electric capacity 80,90 among the ASIC are undertaken automatically controlled by base band ASIC by the bus between two ASIC.
Above mentioned band switch 180,60,70 and electric capacity 80,90 are the most useful in integrated VCO.This switch determines that preferably size is with switch of frequency band between DCS and PCS.Certainly, also can have several different switches, to be used for tuning and switching frequency between other frequency band of non-PCS or DCS.
In a kind of integrated application, the component expansion is handled by IC-and is provided, and can not be reduced.Therefore, these switches have constituted the requirement that is used to make up integrated VCO.Switch 180,60,70 and electric capacity 80,90 very little and not variations of IC-processing this means that fringe cost is very little.
Those skilled in the art should be appreciated that under the situation that does not deviate from spirit of the present invention or essential characteristic the present invention can embody with other particular form.Present disclosed embodiment is exemplary from which angle, rather than restriction the present invention.Scope of the present invention should be illustrated by the specification of appended claim rather than front, and all is contained in wherein in the implication of its equivalents and all changes in the scope.
Claims (12)
1. be integrated in the voltage controlled oscillator (100 in the radio circuit, 130), wherein said voltage controlled oscillator has switching device shifter, this switching device shifter is arranged in the frequency of switching voltage controlled oscillator arbitrarily between the frequency band, thereby make voltage controlled oscillator (100,130) can carry out that frequency band switches and frequency tuning one of them, it is characterized in that:
Described radio circuit is the radio-specific integrated circuit, and this voltage controlled oscillator (100,130) and this switching device shifter are integrated in this radio-specific integrated circuit.
2. as the desired voltage controlled oscillator of claim 1, it is characterized in that described switching device shifter by a controller of the exterior arrangement of described radio-specific integrated circuit by bus (Bsel, Bsel_bar) carry out automatically controlled.
3. as the desired voltage controlled oscillator of claim 2, it is characterized in that described peripheral control unit is a logical circuit, it is by controlling described switching device shifter based on wired communication link or wireless communication link.
4. as the desired voltage controlled oscillator of claim 3, wherein said wireless communication link is a Bluetooth link.
5. as the desired voltage controlled oscillator of claim 1, it is characterized in that described switching device shifter is configured to by node (Out, Out_bar) be switched on or switched off voltage controlled oscillator (100,130) electric capacity (60 in the resonator, 70,80,90), switch and/or carry out the centre frequency that pressuring controlling oscillator frequency is tuned to voltage controlled oscillator to be used to carry out frequency band.
6. as the desired voltage controlled oscillator of claim 5, it is characterized in that described electric capacity is variable capacitance diode (60,70), wherein said variable capacitance diode is included in the diode with the collector-base junction in the bipolar transistor.
7. as the desired voltage controlled oscillator of claim 6, it is characterized in that when switching device shifter was connected, diode (60,70) was forward biased, and when switching device shifter disconnected, described diode was back-biased.
8. as the desired voltage controlled oscillator of claim 5, it is characterized in that when switching device shifter was connected, the electric capacity of switching device shifter was by coupling capacitance (80,90) arrange, and when switching device shifter disconnected, the electric capacity of switching device shifter was to be arranged by variable capacitance diode (60,70).
9. as the desired voltage controlled oscillator of claim 1, it is characterized in that described switching device shifter is configured to by node (Out, Out_bar) be switched on or switched off voltage controlled oscillator (100,130) electric capacity in the resonator (120), switch and/or carry out the centre frequency that pressuring controlling oscillator frequency is tuned to voltage controlled oscillator to be used to carry out frequency band, wherein said electric capacity comprises variable capacitance diode (220,230) and coupling capacitance (210,240).
10. as the desired voltage controlled oscillator of claim 1, it is characterized in that described switching device shifter is configured to switch respectively the centre frequency of voltage controlled oscillator (100,130) between DCS frequency band and PCS frequency band.
11., it is characterized in that described switching device shifter comprises several switches that are used for tuning and switching frequency between other frequency band except that PCS or DCS as the desired voltage controlled oscillator of claim 1.
12., it is characterized in that it is included in the portable terminal according to the voltage controlled oscillator of claim 1.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9903271A SE519489C2 (en) | 1999-09-13 | 1999-09-13 | VCO switch |
| SE99032716 | 1999-09-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1373931A CN1373931A (en) | 2002-10-09 |
| CN1199354C true CN1199354C (en) | 2005-04-27 |
Family
ID=20416976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB008128405A Expired - Fee Related CN1199354C (en) | 1999-09-13 | 2000-09-07 | Integrated VCO switch |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP1216507A1 (en) |
| JP (1) | JP2003509942A (en) |
| CN (1) | CN1199354C (en) |
| AU (1) | AU7465500A (en) |
| MY (1) | MY122738A (en) |
| SE (1) | SE519489C2 (en) |
| WO (1) | WO2001020785A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4390105B2 (en) * | 2004-05-19 | 2009-12-24 | ソニー・エリクソン・モバイルコミュニケーションズ株式会社 | Variable capacitance circuit with on / off switch of variable capacitance function, and voltage controlled oscillator using this variable capacitance circuit |
| US8253506B2 (en) * | 2010-10-05 | 2012-08-28 | Qualcomm, Incorporated | Wideband temperature compensated resonator and wideband VCO |
| US9673755B1 (en) * | 2016-02-09 | 2017-06-06 | Cognitive Systems Corp. | Controlling a switched capacitor bank in a voltage controlled oscillator for wireless sensor devices |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4259744A (en) * | 1979-08-27 | 1981-03-31 | The United States Of America As Represented By The Secretary Of The Navy | Signal generator |
| JPS5873244A (en) * | 1981-10-27 | 1983-05-02 | Nippon Kogaku Kk <Nikon> | Pll frequency synthesizer |
| US5142246A (en) * | 1991-06-19 | 1992-08-25 | Telefonaktiebolaget L M Ericsson | Multi-loop controlled VCO |
| US5426384A (en) * | 1993-12-27 | 1995-06-20 | Motorola, Inc. | Voltage controlled oscillator (VCO) with symmetrical output and logic gate for use in same |
| JPH07202638A (en) * | 1993-12-28 | 1995-08-04 | Matsushita Electric Ind Co Ltd | Voltage controlled oscillator |
| JP3291198B2 (en) * | 1996-05-08 | 2002-06-10 | 富士通株式会社 | Semiconductor integrated circuit |
| WO1998051014A1 (en) * | 1997-05-02 | 1998-11-12 | Analog Devices, Inc. | Dual band phase locked loop using independent charge pumps |
-
1999
- 1999-09-13 SE SE9903271A patent/SE519489C2/en not_active IP Right Cessation
-
2000
- 2000-08-23 MY MYPI20003872 patent/MY122738A/en unknown
- 2000-09-07 AU AU74655/00A patent/AU7465500A/en not_active Abandoned
- 2000-09-07 CN CNB008128405A patent/CN1199354C/en not_active Expired - Fee Related
- 2000-09-07 EP EP00963207A patent/EP1216507A1/en not_active Withdrawn
- 2000-09-07 WO PCT/SE2000/001728 patent/WO2001020785A1/en not_active Application Discontinuation
- 2000-09-07 JP JP2001524243A patent/JP2003509942A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| SE9903271L (en) | 2001-03-14 |
| EP1216507A1 (en) | 2002-06-26 |
| MY122738A (en) | 2006-05-31 |
| JP2003509942A (en) | 2003-03-11 |
| CN1373931A (en) | 2002-10-09 |
| WO2001020785A1 (en) | 2001-03-22 |
| SE9903271D0 (en) | 1999-09-13 |
| AU7465500A (en) | 2001-04-17 |
| SE519489C2 (en) | 2003-03-04 |
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Granted publication date: 20050427 Termination date: 20160907 |