CN1195424A - Semiconductor wafer processing adhesives and tapes - Google Patents

Abstract

A semiconductor wafer processing tape comprises a permanent backing and a layer of a non-pressure sensitive adhesive comprising a thermoplastic elastomer block copolymer on the permanent backing. Optionally, the adhesive may include an adhesion modifier such as a tackifying resin, a liquid rubber or a photocrosslinking agent. The tapes are useful for both wafer grinding and wafer dicing applications. A method of processing semiconductor wafers is disclosed.

Description

Semiconductor wafer processing adhesives and adhesive tape

The background of invention

FIELD OF THE INVENTION

The present invention relates generally to be used for the adhesive composition and the adhesive tape of semiconductor wafer processing, relate in particular to the polishing that is used for semiconductor wafer and the adhesive composition that contains thermoplastic elastomeric block copolymers and the adhesive tape of section.

The description of association area

Semiconductor integrated circuit (IC) chip is generally used for electronic component, and these elements can be used for accurate industrial machine, automobile, also can be used for daily household electrical appliance.The manufacturing of semiconducter IC chip is to be begun by the semiconductor wafer that manufacturing contains many semiconductor element.At last, wafer is sawn into or is cut into independently semiconductor element (being called matrix (die)), each element is exactly a slice semiconducter IC chip.

In general, prepare semiconductor wafer by thin circular wafer with highly purified silicon ingot section of monolithic or saw blade Cheng Houyue 500 to 1000 μ m.Can change the electrical property of wafer by mixing.Then, generally use photoetching process that electronic circuit is applied on the front of wafer.Also photoetching separator bar on wafer is used at last wafer slice being become independently semiconducter IC chip so that the saw blade mark to be provided.

Traditional wafer diameter is about 3 to 4 inches.Yet because single IC chip is increasing, therefore general wafer diameter increases to about 5 to 8 inches now, so that can form more matrix by single-wafer.The diameter of estimating wafer will finally reach about 12 to 16 inches, may also can be bigger.

In order to make accurate electronic circuit avoid because dust, moisture, gas carry the atmospheric staining that caustic acid etc. is caused, add the last layer passivation layer in the front of wafer, this layer passivation layer can be inorganic material (as silicon oxynitride) or organic material (as polyimides).

For electronic component can be made more easily, need the thickness (thereby attenuate the thickness of the semiconducter IC chip that forms of wafer) thus of thinned wafer.Usual way is: the front that keeps wafer is against vaccum bench (vacuumtable), and the back side of the wafer of polishing simultaneously to its thickness is about 200 to 500 μ m, and the water spray is to remove the chip under the mill.Yet wafer itself is frangible, and it is easy in bruting process cracked, and this problem is even more serious along with the increase of wafer diameter.In addition, the dust that produces in the wafer bruting process may stain electronic circuit.And the front that keeps wafer may abrade passivation layer and beneath circuit against vaccum bench.Therefore, need protection wafer (the especially front of wafer) avoid cracked, stain and abraded.

The early stage method that addresses this problem is to use one deck paraffin in the front of wafer, and this layer wax finally uses solvent wash to remove.The shortcoming of this method has record in people's such as Narimatsu U.S. Patent No. 4,853,286.In other method, having a kind of is that photoresist (photoresist) coating is spin-coated on the front of wafer, but this can not eliminate the cracked of wafer.

Recently, people use contact adhesive (PSA) adhesive tape to protect the front of wafer.Sometimes, use pressure sensitive adhesive tape separately, sometimes it is used in combination with photosensitive resin coating, can adhere to surface on it to obtain the PSA adhesive tape.Yet according to technical literature, adhesive tape can not thoroughly solve the problem of wafer protection.Mention in the above-mentioned U.S. Patent No. 4,853,286, still the cracked of wafer can be taken place, and adhesive surface coalescent dust, these dusts can stain wafer.If discussing the PSA adhesive tape, European Patent Publication No No.0 530 729 very strong initial adhesion power is arranged for wafer, perhaps the time between being removed increases and strengthens its bonding force on the wafer along with adhesive tape is administered to, and so then will remove the PSA adhesive tape and will have any problem.

About the various adhesive tapes that are used for back surface of semiconductor wafer polishing operation (this paper is called " wafer polishing " sometimes) of report, record and narrate to some extent.For example, disclosed a kind of wafer process film in the above-mentioned U.S. Patent No. 4,853,286, it is used for preventing that in the bruting process of wafer it is cracked.This film comprises the support membrane on common adhesive (as acrylic acid, ester, polyurethane or synthetic rubber binder) that counterdie, one deck can be buied and the optional non-adhesive one side that is laminated to the base film.Recorded and narrated a kind of wafer process film in people's such as Takemura the U.S. Patent No. 5,126,178, it comprises counterdie, and one deck contact adhesive (with the protection of removable stripping film) is arranged on the one side of counterdie, and one deck phosphoric acid is arranged overleaf is surfactant.Contact adhesive can be the adhesive of acryloyl base system (acryl-based), ethene base system or rubber system, yet, be preferably the contact adhesive of aqueous emulsion type.Recorded and narrated a kind of wafer process film in people's such as Takemura the U.S. Patent No. 5,183,699, it is used for preventing that it is cracked when wafer is polished.This wafer process comprises counterdie with film, and layer of adhesive (as the acrylic acid series of routine or the adhesive of rubber system) is arranged on counterdie.On adhesive phase, placed one deck synthetic resin film, the surface roughness of this synthetic resin film is no more than 2 μ m.

Recorded and narrated among the European Patent Publication No No.0 252 739 in the process at the back side of polishing semiconductor wafer, at the front of wafer applied adhesives sheet.The adhesive that this adhesive sheet comprises egative film and one deck is water swellable, can be water-soluble, this adhesive are preferably substantially by the copolymer of the monomer of monomer that contains unsaturated carboxylic acid and esters of acrylic acid to be formed.Disclosed a kind of pressure sensitive adhesive tape among the European Patent Publication No No.0 530 729, it is used for the back side polishing of semiconductor wafer.It is reported that this contact adhesive has less initial adhesion power, do not show that also bonding strength strengthens in time.It comprises the crosslinking agent of the emulsion binders of acrylic resin, non-ionic surfactant, epoxy type and/or aziridine type, and organic compound that can be water-soluble.

Japanese Laid-Open Patent Application No.62-58638 has disclosed a kind of element, and it is used to protect wafer that the circuit one side is arranged when the back side of polishing of semiconductor wafers.Protective element comprises the sheet of moisture-resistant gas, and its modulus of elasticity and dimensional stability are all very high.On this moisture-resistant gas sheet, apply contact adhesive (as the adhesive of acrylic acid, rubber, polyvingl ether or polyurethanes).

Yet, still needing a kind of adhesive tape, it has bigger effectiveness in semiconductor wafer polishing processing.Preferably, this adhesive tape has multiple required performance.For example, adhesive tape should be able to promptly provide and surface (as silicon, polyimides, silicon oxynitride and photosensitive resin coating) bonding enough initial adhesion power, to such an extent as to semiconductor wafer can experience post-processing step easily, and adhesive tape is easy to remove when needed.Better, single adhesive tape of planting can all provide acceptable initial adhesion power to each of these surfaces, thereby not need be that different adhesive tapes is stored on different surfaces.Yet, final bonding force should be too not high, so that wafer number cracked or that break is higher than the wafer number that is allowed under the conventional industrial standard and (generally is about per 1 owing to remove adhesive tape, in 000 1 or still less), perhaps residual adhesive residue, these residues may be unfavorable to later wafer process.

Initial and the final bond properties that also needs adhesive tape is in a few days of storing, and is more preferably more than several weeks to be kept.That is to say that bonding force should not strengthen (be also referred to as bonding force sometimes and increase (adhesionbuild)) in time, and this enhancing is subject to method or material, this problem occurs in some PSA.Similarly, bonding force should not have other significant variation in time, if the surfactant in the adhesive and other flowable component consequently form more weak boundary layer to the migration of adhesive adhesive layer, this variation may take place.Keep its adhesive initial and final bond properties that the adhesive tape with larger storage life can not only be provided at lay up period, and adhesive tape sticking is not being needed the processing of polishing behind semiconductor wafer at once.

Another characteristic that needs is can remove adhesive tape and do not stain wafer, contamination can make the optical density (OD) of semiconductor wafer change, semiconductor wafer placed to examine under a microscope to observe this variation, this is owing to there is the adhesive residue of microscope visible energy to stay on the passivation layer, or has removed due to the passivation layer of part.Adhesive is insensitive to water also to be helpful, can prevent that like this wafer is by shower water lane pine used during polishing.

After semiconductor wafer polishing, wafer is sawn into or is cut into independently before the semiconducter IC chip, and several intermediate fabrication steps is generally arranged.General following the carrying out of the section of wafer: the back side of the polishing of wafer is bonded on the PSA adhesive tape adhesive surface of (often being called the section adhesive tape), to be fixed on through bonding wafer on the vaccum bench and move, and saw with the rotary diamond of water spray and cut along the saw mark of prior photoetching on semiconductor wafer to limit it.Then, take off each semiconducter IC chip from section with adhesive tape.Usually upwards push away against the section of IC chip area backing with probe, use vacuum cup lifter (vacuum pick-up) to catch the top of IC chip simultaneously, it is taken off with adhesive tape from cutting into slices with adhesive tape, like this can be so that operate easier.Then, the IC chip that takes off is further processing immediately, perhaps they is preserved in order to further be assembled into final products in the future.

Existing technical publications has been recorded and narrated and has been used adhesive to cut into slices with all difficulties that adhesive tape ran into.For example, the scope that needs bonding force has been discussed among the European Patent Publication No Nos.0 520 515 and 0 157 508 is enough to make semiconductor wafer to be bonded on the adhesive tape, to such an extent as to but can not hinder the IC chip that takes off through section too greatly again.

For the adhesive tape that is used for the wafer slice operation, describe to some extent.For example, disclosed a kind of adhesive tape among the above-mentioned European Patent Publication No No.0 520 515, it is used for fixing semiconductor wafer, and these semiconductor wafers are cut into independently matrix to form independently semiconductor chip.This adhesive tape comprises three support membranes of pressing layer by layer, is the contact adhesive of radiation-hardenable on the one side of this support membrane.Preferably, this contact adhesive contains acryloid cement, cyanurate or isocyanurate compound, and polyester or polyatomic alcohol polyurethane acrylate (polyol urethane acrylate).Recorded and narrated a kind of section adhesive tape among the European Patent Publication No No.0 588 180, it comprises can see through the film of radiation and the contact adhesive of radiation-cross-linkable, and this contact adhesive contains the radiation initiators of combined polymerization.This contact adhesive can obtain by (methyl) acrylic acid, (methyl) acrylate, vinyl acetate or various vinyl alkyl ethers monomer are synthetic.

Record and narrate a kind of section film of semiconductor wafer among the Japanese Laid-Open Patent Application No.62-121781, wherein, on the butylene polymer film, used conventional contact adhesive.Japanese Laid-Open Patent Application No.5-230426 has disclosed the adhesive tape that is used for wafer slice, and it comprises the counterdie of being made by the rubber-like elasticity material, and adhesive phase (the especially adhesive of acrylic compounds) is arranged on counterdie.

Recorded and narrated a kind of thin adhesive sheet among the above-mentioned European Patent Application No. No.0 157 508, it is used for protecting semiconductor wafer at polishing step, perhaps is used for fixed wafer when semiconductor wafer being cut and be divided into the IC element chip.This adhesive sheet comprises the matrix and the contact adhesive of light-permeable, and this contact adhesive can solidify by light radiation, forms three-dimensional net structure.This adhesive comprises the contact adhesive of rubber system or acryloyl base system, photopolymerizable compound and the mixture of photo-induced polymerization initiator.

Yet, still needing a kind of adhesive tape, it has better effectiveness in the slice processing of semiconductor wafer.These adhesive tapes preferably can have several required performances.For example, these adhesive tapes should be able to provide enough and be bonded in initial adhesion power on the silicon wafer (and other needs surface of adhesive tape bonding, as Gold plated Layer or stainless steel machine part) so that the semiconducter IC chip of gained can not fluff in the slicing processes of wafer.Yet final bonding force should be too not high, thus break when adhesive tape takes off the semiconducter IC chip or cracked chip-count greater than the number that under conventional industrial standard, is allowed.The a few days that also needs initial and final bond properties storing, be more preferably more than several weeks and kept, because be bonded in from semiconductor wafer section with adhesive tape on the time, after section, the semiconducter IC chip of gained is taken off from adhesive tape, may experience a few days or several weeks between this.If bonding force significantly strengthened along with the time, this just needs and will take off and store from adhesive tape through the semiconducter IC chip of section, unless they use after section at once.

Should accomplish that also the semiconducter IC chip can be taken off neatly from adhesive tape, so that not stay adhesive residue, these residues can hinder later processing, as the welding and the encapsulation of IC chip.Adhesive on the adhesive tape is non-caked also to be favourable on saw blade, because if bond to some extent, will need the sectioning of regular interruption wafer, to remove the adhesive residue of accumulation from saw blade, prevents the contamination of semiconducter IC chip.In addition,, so just can use thicker adhesive phase, help like this preventing owing to carelessness makes saw blade switch to the backing of adhesive tape if adhesive can not be bonded on the saw blade.If the backing of adhesive tape is partly switched in the slicing processes of wafer, then adhesive tape can die down in the course of processing thereafter and break prematurely.

Adhesive also should be insensitive to water, can prevent that so too much wafer is owing to water spray used in the slice processing fluffs.

At last, if the sanding operation that both can be used for wafer can be arranged, it will be very favourable that sectioning single who can be used for wafer again plants adhesive tape, store different adhesive tapes because this can save to different process operations.

The general introduction of invention

The present invention relates generally to adhesive composition and adhesive tape, they are used for processing semiconductor wafer, comprise the polishing and the section of semiconductor wafer.Adhesive composition of the present invention preferably and wafer process have lower initial adhesion power with adhesive tape for important matrix (as photo-sensitive resin, polyimide passivation layer, silicon oxynitride passivation layer and silicon).Preferable embodiment has shown that minimum in time bonding force increases, so that semiconductor wafer and/or semiconducter IC chip can easily take off with adhesive tape from wafer process, and can not stay the adhesive residue of visible energy.

In one embodiment, the invention provides a kind of semiconductor wafer processing and use adhesive tape, it comprises permanent backing and the non-contact adhesive of the one deck on permanent backing.This adhesive comprises thermoplastic elastomeric block copolymers.Preferably, this adhesive storage modulus at room temperature is greater than 1 * 10 ⁶Pascal.Thermoplastic elastomeric block copolymers comprises the segment of thermoplastic and the segment of rubbery state elastomer (rubbery elastomer), the segment of thermoplastic is the styrene of about 5-30% content preferably, better be about 8-25%, be preferably 15-25%.The example of good thermoplastic elastomeric block copolymers comprises the copolymer with styrene block and ethylene/propene block especially, as styrene-ethylene/propylene-styrene block copolymer and styrene-ethylene/propylene-styrene-ethylene/propene block polymer.

Semiconductor wafer processing of the present invention preferably is about wide 20 to 500 grams of every linear inch (better being about 20 to 200 grams) with adhesive tape for a kind of peel adhesion in the following matrix, these matrix are: silicon, polyimides, silicon oxynitride and photosensitive resin coating, and, even adhesive tape is contacting with matrix, under environmental condition, stop to press (dwell) after 7 days, still can keep the bonding force of this scope.

For to interested matrix necessary bonding force is provided, need to comprise adhesion modifier in the adhesive, as tackifying resin (be less than 10% (weight), total weight in thermoplastic elastomeric block copolymers and tackifying resin, be 3-8% (weight) better), liquid rubber (generally is less than 20% (weight), in the total weight of thermoplastic elastomeric block copolymers and liquid rubber, better be about 5% to being less than 20% (weight)), perhaps photocrosslinking agent.When thermoplastic elastomeric block copolymers was the copolymer of hydrogenation, tackifying resin and liquid rubber adhesion modifier were particularly useful.When thermoplastic elastomeric block copolymers was unhydrided copolymer, the photocrosslinking agent was particularly useful.

Another embodiment of the invention provides a kind of semiconductor wafer processing adhesive tape, it comprises permanent backing and the non-contact adhesive of the one deck on permanent backing, described adhesive comprises the hydrogenation thermoplastic elastomeric block copolymers, and its storage modulus in the time of 20 ℃ is 2.7 * 10 ⁶To 4.0 * 10 ⁶Pascal.In the present embodiment, good especially is styrene-ethylene/propylene-styrene and styrene-ethylene/propylene-styrene-ethylene/propylene alkene block copolymer.

A good especially aspect of the present invention has provided a kind of wafer slice adhesive tape, and it has said structure.These adhesive tapes more advantageously have thin backing, are about 12 to 50 μ m (better being about 12 to 25 μ m, best 12 to the 15 μ m that are about), and described backing was about for 100 to 200% (better being about 120 to 165%) at elongation at break longitudinally.These wafer slice with the advantage of adhesive tape are, when using adhesive tape on semiconductor wafer, contacts with wafer, under environmental condition, stop pressing 15 days after, its peel adhesion is about every linear inch width 20 to 200 and restrains.

The invention still further relates to the method for processing semiconductor wafer.This method may further comprise the steps:

(a) obtain semiconductor wafer;

(b) semiconductor wafer is bonded to semiconductor wafer processing with on the adhesive face of adhesive tape, described adhesive tape comprises permanent backing and the non-contact adhesive of the one deck on permanent backing;

(c) become the IC semiconductor chip to come processing semiconductor wafer by the back side of polishing wafer or with wafer slice.

Described adhesive comprises aforesaid thermoplastic elastomeric block copolymers.

The detailed description of preferable embodiment

The present invention relates generally to adhesive composition and adhesive tape, they are used for wafer process, comprise wafer polishing and wafer slice process." wafer polishing " used herein is meant the back side of polishing semiconductor wafer with the process of its thickness of attenuate, this process in the semiconductor wafer manufacturing be for people known." wafer slice " used herein is meant and semiconductor wafer is sawn into or is cut into each matrix or semiconducter IC chip, and this changes in the process of IC chip at semiconductor wafer also is to be the known step of people.

Adhesive composition of the present invention preferably and wafer process can provide lower final bonding force, these matrix such as photo-sensitive resin, organic passivation layer (as polyimides), inorganic passivation layer (as silicon oxynitride) or silicon to the important matrix of semi-conductor industry with adhesive tape.Preferable embodiment has shown that minimum in time bonding force increases, so that semiconductor wafer and/or semiconducter IC chip can easily take off with adhesive tape from wafer process of the present invention, and the cracked or number that breaks can be greater than the number that industrial standard allowed, and can not stay the adhesive residue of the visible energy for interior eye.Better implement scheme of the present invention shows these character for some above-mentioned stromal surface, and best embodiment shows these character for all above-mentioned stromal surface.Better the adhesive composition and the adhesive tape of embodiment of the present invention can also be removed and not stain from semiconductor wafer and/or semiconducter IC chip.

On the one hand, wafer process of the present invention comprises permanent backing with adhesive tape, and the non-contact adhesive of the one deck on permanent backing (non-PSA), and wherein, non-PSA comprises thermoplastic elastomeric block copolymers.

" permanent backing " is meant matrix or the back sheet that will use the part of adhesive tape as wafer process, rather than removable or strippable component, as release liner interim, protectiveness.In order to make wafer process of the present invention with adhesive tape wider effectiveness be arranged, permanent backing need have several properties.For example, permanent backing should have enough flexibilities so that it can be around mandrel coiling tubular, so that handle, store and transportation.In addition, permanent backing should be able to cut with cutter, so that can make the broadband bar, these broadband bars can further be cut into the tape of narrower width subsequently to use more easily, and offering semiconducter IC chip manufacturing step, this step need be cut permanent backing.Preferably, but compound that the contained water of permanent backing extracts or ion component should not surpass the amount that is allowed under the wafer fab industries standard of routine.Be more preferably permanent backing and do not contain these materials, reducing its sensitiveness, and reduce semiconductor wafer by possibility that these materials stain to water.

Can be used for wafer process of the present invention can be monofilm or multilayer film with the permanent backing of adhesive tape.The thickness of backing can change in the scope of broad, as long as the adhesive tape of gained can use wafer polishing and wafer slice equipment easily to handle.Under this criterion, the thickness of permanent backing generally is about 5 to 500 μ m.Yet for the wafer slice adhesive tape, the thickness that is preferably permanent backing is about 12 to 50 μ m, is more preferably thickness and is about 12 to 25 μ m, and best is that thickness is about 12 to 15 μ m.In addition, the specific wafer process that is used to cut into slices is preferably with adhesive tape has enough tensilities, takes off semiconductor die easily to adapt to the probe that use upwards pushes away.Therefore, be used for wafer slice and be about 70 to 240 kPas (kPa) with the permanent preferably backing of adhesive tape at fracture tensile strength longitudinally, laterally, fracture tensile strength is about 100 to 300kPa.Equally, the permanent preferably backing that is used for wafer slice was about for 100 to 200% (better being about 120 to 165%) at elongation at break longitudinally, and laterally, elongation at break is about 30 to 90%.Hot strength is less than this scope, and perhaps percentage elongation takes off when contacting with probe greater than the permanent backing of this scope and semiconducter IC chip, and its ratio of elongation should be used for the permanent backing of the present invention of wafer slice processing and want big.Therefore, the backing in better scope can not cause the manufacturing speed that slows down, because the distance of probe operation has increased.And along with the rigidity increase (being high tensile, low elongation) of permanent backing, it is just easier to handle now more and more general larger-diameter semiconductor wafer.

Make wafer process of the present invention and comprise polyolefin (as polyethylene, polypropylene, polybutene and polymethylpentene), ethylene/vinyl base monomer copolymer (as ethene/(methyl) acrylic copolymer and ethylene), polybutadiene, polyvinyl chloride, polyurethane, polyamide, polyester (especially PETG) with the material of permanent backing used in the adhesive tape.

The used adhesive composition of the present invention is non-PSA material, and it comprises, better is made up of thermoplastic elastomeric block copolymers basically." non-PSA " is meant the adhesive with voltage-dependent characteristic.It is generally acknowledged that contact adhesive is meant the lighter pressure of adhesive those just show permanent adhesive and aggressive tack (aggressive tackiness) after having used to(for) the various matrix in the relative broad range.Acceptable quantitative description for contact adhesive provides by the Dahlquist normal line, and this normal line points out that (about 20 to 22 ℃) are measured with 10 radian per seconds under room temperature, and storage modulus (G ') is less than about 3 * 10 ⁵Pascal's material has the pressure-sensitive adhesion performance, and the material that G ' surpasses this value does not have the pressure-sensitive adhesion performance.Therefore, more particularly, non-PSA used herein is meant that storage modulus is higher than the material of Dahlquist normal line at least, is meant that better storage modulus is 1 * 10 ⁶The material that Pascal is above.

" thermoplastic elastomeric block copolymers " is meant the A of block and the copolymer of B block or segment, and this copolymer has thermoplasticity and high resiliency (being rubbery state) behavior.For simplicity, use the statement of " thermoplastic elastomer (TPE) " and " block copolymer " herein sometimes, what refer to is exactly thermoplastic elastomeric block copolymers.Therefore, thermoplastic elastomer (TPE) can be very easily makes a distinction with the natural and synthetic rubber and the thermoplastics (as acrylate and polyvinyl) of routine.Be used for adhesive composition of the present invention and wafer process and comprise the segmented copolymer of A-B-A three block structures and the blend of these materials with A-B diblock star, line style and line style with the thermoplastic elastomer (TPE) of adhesive tape.In these structures, A represents nonrubber attitude thermoplasticity segment (as the end block), and B represents rubbery state elastomeric segments (as middle segment).Yet other monomer of small part also can enter in the block copolymer.

Illustrative thermoplasticity A block comprises aromatic hydrocarbon (aromatic hydrocarbons), the especially monocycle of monocycle or many rings or the aromatic hydrocarbons (arenes) of many rings.The aromatic hydrocarbons of illustrative monocycle and many rings comprises and replacing or unsubstituted poly-(vinyl) aromatic hydrocarbons with monocycle and twin nuclei.Thermoplastic elastomer (TPE) comprises the thermoplasticity segment of replacement or unsubstituted mononuclear aromatics preferably, and it has enough chain segment molecular weights to guarantee being separated under the room temperature.Thermoplasticity A block can comprise the homopolymers or the copolymer of alkenyl aromatic hydrocarbon.

Alkenyl aromatic hydrocarbon in the thermoplasticity A block is the aromatic hydrocarbons of mono-alkenyl preferably.Term " aromatic hydrocarbons of mono-alkenyl " is believed to comprise the particularly aromatic hydrocarbons of benzene series row, as styrene and analog and homologue, comprise o-methyl styrene, p-methylstyrene, to t-butyl styrene, 1, the styrene of 3-dimethyl styrene, AMS and other cyclic alkylization (the especially styrene of ring-methylated), and the polycyclc aromatic compound of other mono-alkenyl, as vinyl naphthalene, vinyl anthracene etc.Mono alkenyl arene is the mono-vinyl mononuclear aromatics preferably, and as styrene and AMS, good especially is styrene.

Each thermoplasticity A block is preferably the number-average molecular weight that has at least about 6,000, and to promote the formation of good domain structure, better number-average molecular weight is about 8,000 to 30,000.Thermoplasticity A block generally accounts for the 5-30% (weight) of block copolymer, accounts for 8-25% (weight) preferably.When the B block was made up of saturated rubbery state elastomer chain segments, the A block that best thermoplastic elastomer (TPE) contains accounted for about 15-25% (weight) of block copolymer.

The expression of A-B-A comprises the block copolymer of branching and line style, also comprises the mutually different structure of end-blocks, but these end-blocks are all from styrene or styrene homologue (these structures are called as the A-B-C block copolymer sometimes).

The polymer blocks formed by the copolymer of the homopolymers of monomer or two or more aliphatic conjugated diene monomers of rubbery state elastomer B segment preferably.Conjugated diene preferably contains 4 to 8 carbon atoms.The example of suitable conjugate diene monomer comprises: 1,3-butadiene (butadiene), 2-methyl isophthalic acid, 3-butadiene (isoprene), 2,3-dimethyl-1,3-butadiene, 1,3-pentadiene (piperylene), 1,3-hexadiene etc.

In best cinnamic block copolymer, the rubbery state segment can come saturated by the undersaturated precursor of hydrogenation, and these precursors such as mid-block comprise the SBS of 1,4 and 1,2 mixture of isomers.In case, just can obtain styrene-ethylene/butylene-styrene block copolymer with latter's hydrogenation.Similarly, the SIS precursor also can be hydrogenated, and obtains styrene-ethylene/propylene-styrene block copolymer.Rubbery materials (as polyisoprene, polybutadiene and styrene butadiene rubbers) also can be used for forming the rubbery state elastomer chain segments.Good especially butadiene and isoprene in addition.Can also use the mixture of different conjugated dienes.The number-average molecular weight of the B block of line style diblock and triblock copolymer is preferably in 4,500 to 180,000 scope.

Can be used for star block copolymer of the present invention is U.S. Patent No. 3,281, and the type described in 383 meets following general formula: (A-B) _nX, wherein A is the thermoplastic block by styrene or the polymerization of styrene homologue, B is the elastomeric block of rubbery state that is obtained by above-mentioned conjugated diene, X is the molecule with 2-4 degree of functionality that organic or inorganic connects, as silicon tetrachloride, butter of tin or divinylbenzene, also have some other, be recorded in U.S. Patent No. 3, in 281,383.X can have higher degree of functionality, and in this case, " n " is the number relevant with the degree of functionality of A.The number-average molecular weight of star block copolymer is preferably in 125,000 to 400,000 scope.

Thermoplastic elastomer (TPE) can also comprise the mixture of star or linear triblock copolymers and simple diblock copolymer.Yet in the mixture of three blocks and diblock copolymer, the ratio of diblock copolymer should not surpass about 85% (weight), and the lower percentage of general use is as 30%.

In the present invention, can use the various thermoplastic elastomer (TPE)s of buying (use separately or be used in combination), they comprise the material of the SOLPRENE series of Phillips Petroleum Co., the material of the FINAPRENE series of Fina, the material of the TUFPRENE of Asahi and ASAPRENE series, FirestoneSynthetic Rubber ﹠amp; The material of the STEREON series of Latex Co., the material of the EUROPRENESOL T series of Enichem, the material of the VECTOR series of Dexco Polymers, and the material of the CARIFLEX TR series of Shell ChemicalCo..The material of the SEPTON series of Kuraray Co.Ltd. also is available, as SEPTON 2002,2005, and 2007,2023,2043 and 2063.The material of the KRATON series of Shell Chemical Co. also is available, as D-1101, and D-1102, D-1107P, D-1111, D-1112, D-1114PX, D-1116, D-1117P, D-1118X, D-1119, D-1122X, D-1124, D-1125PX, D-1184, D-1300X, D-1320X, 4141,4158,4433, RP-6408, RP-6409, RP-6614, RP-6906, RP-6912, G-1650, G-1651, G-1652, G-1654X, G-1657, G-1701X, G-1702X, G-1726X, G-1750X, G-1765X, FG-1901X, FG-1921X, FG-1924 and TKG-101.In general, be preferably the heat of hydrogenation thermoplastic elastic of KRATON series.

A good especially class material is a hydrogenated block copolymer, it comprises styrene segment and ethylene/propene segment, especially the coupling efficiency of those reports is 100%, the styrene that contains the 15-25% that has an appointment (about 18-23% is better), hot strength is about 3100psi, and fracture deformation is about 9% block copolymer.These materials show following storage modulus (under 10 radian per seconds): in the time of 0 ℃, and about 2.5 * 10 ⁶To 4.0 * 10 ⁶Pascal; In the time of 20 ℃, about 2.7 * 10 ⁶To 4.0 * 10 ⁶Pascal; In the time of 40 ℃, about 2.9 * 10 ⁶To 3.8 * 10 ⁶Pascal.The representative of this class material is KRATON RP-6906 and RP-6912, and the latter is especially special, and it is the line style segmented copolymer with four independent blocks (styrene-ethylene/propylene-styrene-ethylene/propene).Also can use the blend of these materials.The advantage of this class material is that they just have effective bonding force under the situation that does not add adhesion modifier.

The available intrinsic bonding force scope of some thermoplastic elastomer (TPE)s among the present invention, for the maximum utility in the wafer process, may too low (especially some heat of hydrogenation thermoplastic elastics), perhaps may too high (especially some unhydrided thermoplastic elastomer (TPE)s).In addition, for effectiveness best in the wafer process, some thermoplastic elastomer (TPE)s may not be wetting fully the stromal surface of desire bonding, can form second-rate coating like this, perhaps be difficult to apply, perhaps both have both at the same time.Therefore, adhesive composition of the present invention also can randomly comprise adhesion modifier: as tackifying resin or liquid rubber, but the intrinsic viscosity that is used for strengthening thermoplastic elastomer (TPE) is made a concerted effort, wettability or coating; Perhaps as the photocrosslinking agent, the intrinsic viscosity that is used for reducing thermoplastic elastomer (TPE) is made a concerted effort.

Can in thermoplastic elastomer (TPE), add tackifying resin, be used for strengthening the initial adhesion strength of thermoplastic elastomer (TPE) and reduce its modulus, to improve the quick humidification ability of adhesive composition its stromal surface of desiring to use.Tackifying resin can also provide other required performance to adhesive composition, as lower viscosity, the improved ability of coating and improved peel adhesion.

The tackifying resin that can be used for adhesive composition of the present invention comprises by C ₅To C ₉The resin that obtains of unsaturated hydrocarbon monomer polymerization, polyterpene, synthetic polyterpene etc.Tackifying resin can contain the ethene degree of unsaturation, yet saturated tackifying resin is particularly suitable for using with heat of hydrogenation thermoplastic elastic.Can mainly prepare the hydro carbons tackifying resin by polymerization by the monomer that alkene and alkadienes (for example comprising residual accessory substance monomer in the isoprene manufacture process) are formed.In general, the softening point that the ball and ring method of these hydro carbons tackifying resins records is about 80 ℃ to 145 ℃, and acid number is about 0 to 2, and saponification value is less than 1.Tackifying resin used in the adhesive composition of the present invention is generally low molecular weight material, and for example, weight average molecular weight is about 350 to 2,500.Be preferably tackifying resin and thermoplastic elastomer (TPE) is compatible, this just means that these components at room temperature do not have the visible sign that is separated.

The tackifying resin of buying that is used for adhesive composition of the present invention, and this resin is C ₅Olefine fraction system, its example comprises the Wingtack available from Goodyear Tire and Rubber Co. ^TM95 and Wingtack ^TM115 (Wingtack Plus) tackifying resin.Other hydrocarbon resins comprises the Co. available from HerculesChemical, the Regalrez of Inc. ^TM1078, Regalrez ^TM1094 and Regalrez ^TM1126; Available from the Arkon resin of Arakawa Forest Chemical Industries, as Arkon ^TMP115; And available from the Escorez of Exxon Chemical Co. ^TMResin.The example of the derivative that can be used for rosin of the present invention (rosin), especially hydrogenated derivatives comprises the Co. available from Hercules Chemical, the Foral of Inc. ^TM85 and Foral ^TM105.

Other appropriate resin comprises terpene polymer, the material of the polymer resin that obtains as polymerization and/or copolymerization by terpene hydrocarbon, described terpene hydrocarbon such as alicyclic ring, monocycle and the monoterpene of dicyclo and their mixture, comprise carene, isomerization firpene, terpinenes, turpentine oil and various other terpenes.The terpenoid resin that can buy comprises the Zonarez available from Arizona Chemical Corp. ^TMTerpenes B series and 7000 series.Zonarez ^TMThe general performance that terpene resin is reported comprises that the softening point that ball and ring method records is about 80 to 145 ℃, and saponification value is less than 1.

Tackifying resin uses with effective dose, promptly give the consumption of the suitable bonding force of interested matrix.The actual amount of tackifying resin depends on the scope of required bonding force, the matrix of desire bonding and the modulus of thermoplastic elastomer (TPE).Tackifying resin can not make bonding force that enough enhancings are arranged with quantity not sufficient.On the other hand, the consumption of tackifying resin should not make final bonding force high to unacceptable degree, and cracked wafer number reaches unacceptable high level when semiconductor wafer takes off wafer process with adhesive tape because this can cause.In general, use can obtain the tackifying resin of the required minimum of suitable bonding force in the non-PSA characteristic that keeps adhesive, this amount is generally less than 10% (weight), in the total weight of tackifying resin and thermoplastic elastomer (TPE), better use 3-8% (weight) approximately.

Perhaps can use liquid rubber to strengthen the initial adhesion strength of adhesive composition, reduce its modulus, and improve wettability the surface of desire bonding.This liquid rubber should be through selecting, and with compatible with thermoplastic elastomer (TPE), this also just means does not at room temperature have the visible sign that is separated.The molecular weight of liquid rubber should be through selecting, and preventing the possibility of liquid rubber to the adhesive layer migration of adhesive, this migration will cause more weak boundary layer and wafer process with the too early inefficacy of adhesive tape.Molecular weight is about 25,000 to 50,000th, and is available.Can use partially hydrogenated liquid rubber, yet best is the liquid rubber of more abundant hydrogenation, as hydrogenation of liquid isoprene rubber (as the Kuraray LIR290 of Kuraray Co.Ltd., molecular weight is about 25,000).

Liquid rubber should use with effective dose, and this amount is to select with the identical standard of above-mentioned tackifying resin.In the scope of these parameters, the general consumption of liquid rubber is less than 20% (weight), in the total weight of thermoplastic elastomer (TPE) and liquid rubber, better is 5% to less than 20% (weight).

On the other hand, if can not easily remove the wafer process adhesive tape to such an extent as to the final bonding force of thermoplastic elastomer (TPE) is too high, the so suitable final bonding force that adds photocrosslinking agent reduction thermoplastic elastomer (TPE)." photocrosslinking agent " used herein is meant a kind of like this reagent, and in a single day it be exposed to (irradiation that is about 250 to 400 nanometers as wavelength) under the ultraviolet irradiation, will cause the crosslinked of thermoplastic elastomer (TPE).

Be applicable to that photocrosslinking agent of the present invention comprises aldehydes, as benzaldehyde, acetaldehyde, and their substitutive derivative; Ketone, as acetophenone, benzophenone, and their substitutive derivative, as Sandoray 1000 ^TM(Sandoz Chemicals, Inc.); Quinones, as benzoquinones, anthraquinone, and their substitutive derivative; The thioxanthene ketone is as 2-isopropyl thioxanthone and 2-dodecyl thioxanthones; And the halogenated methyl s-triazine of certain chromophore replacement, as 2,4-two (trichloromethyl)-6-(3 ', 4 '-Dimethoxyphenyl) s-triazine, however these last materials are not best, because they might produce halogen contamination.

Use to solidify the crosslinking agent of effective dose, that is to say that it is crosslinked that this consumption is enough to make that adhesive carries out, with for interested matrix required final bond properties is provided.The quantity not sufficient of photocrosslinking agent can make that the curing (promptly crosslinked) of adhesive composition is insufficient, to such an extent as to bonding force is still too high, and excessive photocrosslinking agent meeting makes and solidifies unevenly in the adhesive composition body.In these parameter areas, the consumption of photocrosslinking agent generally is about the 0.05-2% (weight) of thermoplastic elastomer (TPE), better is about 0.2-1% (weight), the best 0.3-0.5% (weight) that is about.

Can also comprise a spot of various additive in the adhesive composition.These additives comprise pigment, dyestuff, plasticizer, filler, stabilizer, ultra-violet absorber, antioxidant, processing wet goods.The consumption of additive can change with required final performance.

In order to obtain stronger effectiveness in the processing of wafer, wafer process should not contain ionic impurity substantially with adhesive tape, and these ionic impurities can be moved on the IC semiconductor wafer and be stain them.

Adhesive composition of the present invention and wafer process can easily prepare with adhesive tape.In general, use three-stage roll mill or other low mixing arrangement of shearing at room temperature with thermoplastic elastomer (TPE) and any tackifying resin or liquid rubber solubilising in non-polar organic solvent, last a few hours (generally being about 2 to 4 hours), until cannot see undissolved thermoplastic elastomer (TPE).Described non-polar organic solvent such as toluene, it can mix with a spot of heptane and/or cyclohexane, perhaps mixes with the methyl ethyl ketone that waits weight portion and the blended liquid phase of isopropyl alcohol.If comprise the photocrosslinking agent, the photocrosslinking agent can add at this moment, mixes with three-stage roll mill, to guarantee its thorough dissolving again.The thermoplastic elastomer (TPE) of the solubilising of gained can be again be diluted to and has the solids content that can apply viscosity (4,000 to 5,000 centipoises according to appointment) (according to appointment 25%) with the non-polar organic solvent of mentioned kind.Retarder thinner is the mixed liquor of the toluene/methyl ethyl ketone/isopropyl alcohol of 50%/25%/25% (weight) preferably.

Then, solution is applied on the permanent backing with various coating processes, these coating processes comprise scraper coating, clearance type scraper coating (slotted knife coating) or contrary roller coat cloth.Then, (as 65 to 120 ℃) dry certain hour (in full minute to about 1 hour) obtains adhesive tape at a certain temperature.The thickness of dry adhesive phase can change to the relative broad range of hundreds of (according to appointment 200) micron at about 10 microns, yet for wafer polishing processing adhesive tape, the adhesive thickness of drying better is about 80 to 90 μ m; And for used adhesive tape in the wafer slice processing, the dry adhesive thickness of use is about 50 to 100 μ m.

If use the photocrosslinking agent, adhesive can be exposed to wavelength and be about under 250 to 400nm the ultraviolet irradiation.At this preferably in the wave-length coverage, the required radiant energy of cross-linked binder be about 100 to 1,500 millijoules/centimetre ², better be about 200 to 800 millijoules/centimetre ²Adhesive can carry out crosslinked before or after processed wafer (as polishing or section).

In case adhesive composition has been carried out dry to obtain the wafer process adhesive tape; the adhesive surface of adhesive tape can randomly be protected with interim removable release liner; the film of these release liners such as polyolefin (as polyethylene or polypropylene) or polyester (as PETG), or paper or the plastic film handled through preventing viscosity substance (releasematerial) (as siloxanes, wax, fluorocarbon etc.).

To more fully understand the present invention with reference to following examples, these embodiment do not have restriction.These embodiment evaluate by following specific test method.All given among test method and embodiment dimensions are the nominal dimension.

Test method

Peel adhesion test method A

Wafer process is evaluated for the peel adhesion of the various matrix that can run in the wafer bruting process by the following method with adhesive tape: use adhesive tape sample (the wide 25mm of this adhesive tape is about 130mm) with the rubber-coated roller roll-in of about 2kg it to be bonded on the matrix wafer process.Then, make wafer process stop pressing a period of time under 23 ℃ and 50% relative humidity (RH) with the sticking matrix thereon of adhesive tape, dwell meeting is in an embodiment specifically noted with " stopping pressure ".

Then, the reverse side of matrix (be matrix do not paste the one side of wafer process with adhesive tape) is bonded in Instrumentors securely, on the binding power test carrier of Inc.Slip-Peel Tester ModelSP-102C-3M90 bond testing machine.The free end of wafer process with the test tape of adhesive tape is connected on the power transducer of bond testing machine, the test tape is peeled off from matrix with 180 ° angle and the speed of 30cm/min.With the gram number (grams per linear inch width, gliw, i.e. the gram number of every approximately 25mm) of every linear inch width record peel adhesion, below value that embodiment reported mean value for measuring at least 2 times.

In order to make wafer process be accepted more widely on the semiconductor wafer process industry with adhesive tape, the value of peel adhesion should be about 20 to 500gliw, and best about 20 to 200gliw.Best is that adhesive composition shows that minimum bonding force in time increases, and that is to say that final bonding force is still in these scopes.

Also whether wafer process being considered to strippable this problem with adhesive tape evaluates qualitatively.If a kind of adhesive tape can take off from matrix and it be broken or cracked, and for naked eyes, if there is not visible adhesive residue on matrix, this adhesive tape is considered to strippable so.

The sticking matrix of measuring peel adhesion thereon has: the polyimides (it is used to have the semiconductor wafers of smooth surface) that (1) is level and smooth; (2) routine is used for the representational IC polyimide passivation layer (it has been used to such semiconductor wafers, and the electronic circuit of photoetching is arranged on this wafer, and the exposed surface that is used to bond like this is polyimides and electronic circuit material) of semiconducter IC chip manufacturing; (3) photo-sensitive resin of epoxidation system (being often used in being coated in the manufacturing of semiconductor wafer the representational matrix on the above-mentioned IC polyimide passivation layer); And (4) routine is used to make the representational IC silicon oxynitride passivation layer of semiconducter IC chip, and (it has been used to such semiconductor wafers, the electronic circuit that photoetching is arranged on this wafer, the exposed surface that is used to bond like this are silicon oxynitride and electronic circuit material).

Peel adhesion test method B

Wafer process is also evaluated for the peel adhesion of the various matrix that can run in the wafer slice process with adhesive tape.Use the test tape of adhesive tape with the razor cut crystal processing in fixed blade gap, it is about 115mm * 19mm, by testing for twice with the rubber-coated roller roll-in of about 2kg on the stainless steel matrix that tape is bonded in semiconductor wafers, float glass and 315 grades with smooth surface.(lintless cloth) dips in diacetone alcohol precleaning stromal surface with nonlinting cloth, then with stromal surface rinsing in heptane, air drying.Sample keeps a period of time (specifically seeing " stopping pressing " among the embodiment) under 21 ℃ and 55%RH.Peel adhesion is measured on the Inc.Slip-Peel Tester Model SP-102C-3M90 bond testing machine at Instrumentors.The free end of wafer process with the test tape of adhesive tape is connected on the power transducer of bond testing machine, the test tape is peeled off from matrix with 180 ° angle and the speed of 30cm/min.With the gram number (gliw) of every linear inch width record peel adhesion, below value that embodiment reported be the mean value of measuring for 5 times.Use for wafer slice, the value of peel adhesion is about 20 preferably to 200gliw, and better about 40 to 150gliw, best about 100gliw.Yet actual adhesion power depends on the size of matrix, and less matrix needs bigger peel adhesion usually.Best is that adhesive composition shows that minimum bonding force in time increases, and that is to say that final bonding force is still in these scopes.

The polishing of semiconductor wafer

Be applied to the effectiveness following measurement of the wafer process of wafer polishing with adhesive tape: the width of adhesive tape sample equates with the width of semiconductor wafers at least.This adhesive tape is used the rubber-coated roller roll-in of about 2kg 1 time in the cleaning of 1000 grades indoor under room temperature, it is bonded on the non-silicon face of wafer.Then, making has wafer process at room temperature to stop to press with adhesive tape silicon wafer bonded thereto, and the dwell is no more than 8 hours, is less than 1 hour usually.

Then, will face down, be placed on the vacuum chuck of Disco Model DFG-83H/6 wafer sander through the semiconductor wafer adhesive tape of adhesive tape bonding.In bruting process, a series of three emery wheels (all available from DicsoCorp.) are through semiconductor wafer.First emery wheel (model no.RS-01-2-40/60-NA-A) is removed the silicon of 120 μ m, and second emery wheel (model no.RS-01-2-20/30-NA-C) removed the silicon of 100 μ m, and the 3rd emery wheel (model no.RS-03-2-2/34-P) removed the silicon of 10 μ m.The polishing time is about 10 minutes altogether.After the 3rd grinder buffing, wash semiconductor wafer with water to remove the polishing chip, the air drying makes it stop pressing under environmental condition about 16 hours.

With the test tape of the wide wafer process that expose backing of two 25mm of the razor in fixed blade gap cutting with adhesive tape, about 0.5 inch of every edge indentation than wafer.Then, be that the Nitto BT315S available from Nitto Denko Company of the 50mm band (removal tape) that removes photoresist is applied in the central authorities of exposing backing of wafer process with adhesive tape down with a slice width, with the rubber-coated roller roll-in secondary of about 2kg.Then, remove wafer process between the tape that is bonded in two cuttings with the band that removes photoresist of adhesive tape mid portion with hand.Under the situation of not using the band that removes photoresist, remove the edge that expose backing of two wafer processing with adhesive tape with hand.Then, with the reverse side of semiconductor wafer (promptly not the one side of the adhesion test tape) Instrumentors that bonds securely, on the binding power test carrier of Inc.Slip-PeelTester Model SP-102C-3M90 bond testing machine.One end of test tape is connected on the power transducer of bond testing machine, and band is peeled off from wafer with 180 ° angle and the speed of 30cm/min with adhesive tape with wafer process with removing photoresist.With the gram number scale record peel adhesion of every linear inch width, the value that embodiment reported is the measured value of single.

If a kind of wafer process can be taken off from semiconductor wafer with adhesive tape and do not made wafer breakage or cracked, and for naked eyes, if do not stay visible adhesive residue on wafer, this adhesive tape is considered to strippable so, thereby can be used for the wafer polishing.

The section of semiconductor wafer

Wafer process with adhesive tape as the specific effectiveness following evaluation of wafer slice with adhesive tape: the square adhesive tape sample of sprawling 200mm, the chip tape ring that covers diameter and be 147mm is (available from Gustav Wirz AG.Berg, the #8572 of Switzerland), with outer locking ring (outer lock ring) locking adhesive tape.With diameter is 127mm, and the silicon wafer through polishing that thickness is about 0.43mm is placed on the film of sprawling carefully, to avoid between wafer and film air being arranged.Press lightly with finger at the back side along wafer, to remove any possible air pocket.In adhering to 30 minutes of silicon wafer, use Disco Abrasive System auto slice saw (Model No.DAD-2H/5 is furnished with Disco NDCZ-205-L saw blade, and the external diameter of this saw blade is 50.8mm, and thickness is 0.050mm) to cut into slices.Use the water washing of 30psi, wafer dicing saw cuts into the matrix that otch central authorities are of a size of 4.3mm * 4.3mm with the speed operation of 25.4mm/sec with silicon wafer.Be recorded in the number of the matrix of flush away adhesive tape in the wafer slice process.

The contamination of semiconductor wafer

Wafer process causes the following evaluation of tendency of the contamination of semiconductor wafer with adhesive tape: the test face (promptly removing the one side of wafer process with adhesive tape) of wafer is placed on Zeiss Axioplan Umiversal semiconductor microscopically, this microscope is furnished with Zeiss microscopic camera Model MM100, under condition for the multiplication factor that is changed to rare 128X of testing surface optical density (OD), the whole surface of optical observation.Contamination is all regarded in any variation of testing surface optical density (OD) as.Then, calculate the percentage of the surface area that is stain.In general, exist to stain to be considered to unfavorable, because this can limit the width of wafer process with the adhesive tape scope of application.

Hot strength during fracture and elongation

The hot strength when testing the fracture of several embodiment and the performance of percentage elongation.More specifically, use the razor in fixed blade gap to come the cutting test tape, make its size be about 150mm * 20mm, so prepare test piece.Before test, remove any release liner of sample.Test piece was placed 4 hours under 21 ℃, 55%RH in advance at least, measured on Instron cupping machine Model 1122 then, this testing machine has 50 pounds load transducer, the crosshead speed of 125mm/min and the gap of 50mm.At vertical and horizontal, hot strength and elongation during the measuring samples fracture.Calculate with pounds per square inch (p.p.s.i) under the situation of external force divided by the cross-sectional area of adhesive tape of hot strength when fracture, then the result is changed into kPa (kPa).Institute's results reported is the mean value of 5 measurements in following examples.

Embodiment 1 to 11

Prepare a series of wafer process adhesive tapes of the present invention.The wafer process of each embodiment is prepared as follows with adhesive composition used in the adhesive tape: 30 gram (g) thermoplastic elastomer (TPE)s and 70g toluene are mixed in 1 quart glass container, closing containers is placed on the three-stage roll mill this container until cannot see undissolved thermoplastic elastomer (TPE).Incorporation time altogether is less than 8 hours.Then, the cutter box (knifebox) that use has a bull nose blade with the adhesive composition solution coat on the thick PETG film of 50 μ m, the bull nose blade has coating clearance, is about 76 μ m with the thickness of guaranteeing dry adhesive coating.In case coating, with wafer process at room temperature dry about 10 minutes with adhesive tape, then, 82 ℃ dry 10 minutes down.

Following table 1 illustrates the trade name of the thermoplastic elastomer (TPE) that is used for each embodiment and to the description and the cinnamic percentage of thermoplastic elastomer (TPE) (styrene %) of thermoplastic elastomer (TPE) type.In table 1 (with and subsequent the table in), SIS refers to SIS, SBS refers to SBS, SB refers to styrene-butadiene block copolymer, SEBS refers to styrene-ethylene/butylene-styrene block copolymer, SEPS refers to styrene-ethylene/propylene-styrene block copolymer, and SEPSEP refers to styrene-ethylene/propylene-styrene-ethylene/propylene alkene block copolymer.The KRATON material is the material available from ShellChemical Company.

Table 1 also illustrates the result of peel adhesion test (method A), and wherein, matrix is level and smooth polyimides, and the dwell is 1 day.The observed result of wafer process with the adhesive tape rippability also is shown in the table.

Table 1

Embodiment	Thermoplastic elastomer (TPE)			Test
						Trade name	Type	Styrene %	Peel adhesion (gliw)	Whether peelable
	???1	Kraton?D-1107P	??SIS	????14	????1448						Be
???2						Kraton?D-1114PX	??SIS	????19	????852	Be
	???3	Kraton?D-1102	??SBS	????28	????*						Not
???4						Kraton?D-1118X	??SBS	????30	????*	Not
	???5	Kraton?D-1122X	??(SB)n	????37	????80						Be
???6						Kraton?G-1657	??SEBS	????13	????40	Be
	???7	Kraton?G-1726X	??SEBS	????30	????11						Be
???8						Kraton?G-1650	??SEBS	????29	????31	Be
	???9	Kraton?G-1701X	??SEP	????37	????0						Be
???10						?Kraton?RP-6906	??SEPS	????18	????20	Be
	???11	?Kraton?RP-6912	?SEPSEP	????23	????199						Be

* peel adhesion is too high so that can not remove adhesive tape.

Table 1 shows, saturated thermoplastic elastomer (TPE) generally can be used for the present invention preferably, though (embodiment 6 shows that bonding force in time increases, and embodiment 8 is in case drying just can not obtain level and smooth surface) is because undersaturated material often provides stronger bonding force.Yet, as mentioned above, can reduce the bonding force scope of unsaturated material effectively by sneaking into the photocrosslinking agent, this can be shown in following other the embodiment.Though do not specifically illustrate in table 1, the storage modulus of each embodiment is all more than the Dahlquist normal line.

Embodiment 12 to 19

Prepare a series of wafer process adhesive tapes of the present invention by the method described in the embodiment 1 to 11, different be to use the thermoplastic elastomer (TPE) shown in the following table 2.SEB (I) S refers to have the SEBS block copolymer of isoprene arm (arm).The SEPTON material is the material available from Kuraray Co.Ltd..The evaluation wafer process specifically provides in table 2 with the peel adhesion (service test method A) of adhesive tape on matrix, the rippability of dwell and observation adhesive tape.In these embodiments, polyimide substrate is above-mentioned IC polyimide passivation layer.In table 2, repeated embodiment 5,6,7,10 and 11.

Table 2

Embodiment	Thermoplastic elastomer (TPE)			Test
								Trade name	Type	Styrene %	Matrix	Stop pressing (my god)	Peel adhesion (gliw)	Whether peelable
	???12	Kraton?D-1125PX	??SIS	??30	The IC polyimides	???1	????795								Be
Photoresist								???1	????193	Be
					???13	?Septon?2002	??SEPS				??30	The IC polyimides	???1	????45	Be
The IC polyimides	???7	????91	Be
				Photoresist				???1	????3	Be
Photoresist	???7	????9	Be
				???14				?Septon?2005	??SEPS	??20		The IC polyimides	???1	????79	Be
The IC polyimides	???7	????62	Be
					Photoresist	???1	????11				Be
Photoresist	???7	????93	Be
					???15	?Septon?2007	??SEPS				??30	The IC polyimides	???1	????6	Be
The IC polyimides	???7	????3	Be
				Photoresist				???1	????3	Be
Photoresist	???7	????3	Be
				??16				?Septon?2023	??SEPS	??13		The IC polyimides	???1	????45	Be
The IC polyimides	???7	????162	Be
					Photoresist	???1	????17				Be
Photoresist	???7	????28	Be
					??17	?Septon?2043	??SEPS				??13	The IC polyimides	???1	????1362	Be
The IC polyimides	???7	????1986	Be
				Photoresist				???1	????851	Be
Photoresist	???7	????993	Be
				??18				?Septon?2063	??SEPS	??13		The IC polyimides	???1	????1192	Be
The IC polyimides	???7	????1759	Be
					Photoresist	???1	????150				Be
Photoresist	???7	????709	Be

Table 2 (continuing)

Embodiment	Thermoplastic elastomer (TPE)			Test
								Trade name	Type	Styrene %	Matrix	Stop pressing (my god)	Peel adhesion (gliw)	Whether peelable
	??19	Kraton?TKG101	?SEB(I)S	??18	The IC polyimides	??1	????766								Be
The IC polyimides								??7	????1220	Be
					??10	Kraton?RP-6906	?SEPS				??18	The IC polyimides	??1	????20	Be
The IC polyimides	??7	????62	Be
				Photoresist				??1	????31	Be
Photoresist	??7	????54	Be
				??5				Kraton?D-1122X	(SB)	??37		The IC polyimides	??1	????187	Be
The IC polyimides	??7	????454	Be
					Photoresist	??1	????20				Be
Photoresist	??7	????213	Be
					??6	Kraton?G-1657	?SEBS				??13	The IC polyimides	??1	????256	Be
The IC polyimides	??7	????1221	Be
				Photoresist				??1	????28	Be
Photoresist	??7	????102	Be
				??7				Kraton?G-1726X	?SEBS	??30		The IC polyimides	??1	????3	Be
The IC polyimides	??7	????6	Be
					Photoresist	??1	????3				Be
??11	Kraton?6912	?SEPSEP	??23									The IC polyimides	??1	????94	Be
				The IC polyimides	??7	????210	Be
								Photoresist	??1	????20	Be
				Photoresist	??7	????40	Be

Table 2 shows, the material that has a higher bonding force for level and smooth polyimides in table 1 also has higher bonding force for the matrix in the table 2, though for the bonding force of photo-sensitive resin often less than bonding force for the IC polyimide passivation layer.As grade, the SEPS block copolymer is normally best.Though do not specifically illustrate in table 2, the storage modulus of each embodiment is all more than the Dahlquist normal line.

Embodiment 20 to 25

Prepare a series of wafer process adhesive tapes of the present invention by the method described in the embodiment 1 to 11, the different blends that is to use two kinds of different thermoplastic elastomer (TPE)s shown in the following table 3, wherein the relative percentage of thermoplastic elastomer (TPE) provides with the percetage by weight form.Table 3 also shows the observed result of the rippability of the result of peel adhesion test of method A and adhesive tape, and its mesostroma is the IC polyimide passivation layer.

Table 3

Embodiment	Thermoplastic elastomer (TPE)		Test
						Content and trade name	Type	Stop pressing (my god)	Peel adhesion (gliw)	Whether peelable
	??20	90％/10％ Kraton?RP-6906/Septon?2043	????SEPS/SEPS	??1	????111						Be
??7						????170	Be
				??21	75％/25％ Kraton?RP-6906/Septon?2043			????SEPS/SEPS	??1	????128	Be
??7	????119	Be
			??22			50％/50％ Kraton?RP-6906/Septon?2043	????SEPS/SEPS		??1	????795	Be
??7	????283	Be
				??23	90％/10％ Kraton?RP-6906/Kraton?TKG?101			????SEPS/SEB(I)S	??1	????119	Be
??7	????99	Be
			??24			75％/25％ Kraton?RP-6906/Kraton?TKG?101	????SEPS/SEB(I)S		??1	????173	Be
??7	????108	Be
				??25	50％/50％ Kraton?RP-6906/Kraton?TKG?101			????SEPS/SEB(I)S	??1	????510	Be
??7	????233	Be

Table 3 shows, the relative consumption of block copolymer just can be controlled peel adhesion effectively in the type by changing block copolymer used in the blend and the blend.The blend of good especially is different SEPS block copolymer, or the blend of the SEBS block copolymer of SEPS block copolymer and modification (as SEB (I) S block copolymer).Though do not specifically illustrate in table 3, the storage modulus of each embodiment is all more than the Dahlquist normal line.

Embodiment 26 to 30

Prepare a series of wafer process adhesive tapes of the present invention by the method described in the embodiment 1 to 11, different is that adhesive composition is prepared as follows: the Kraton G-1650 thermoplastic elastomer (TPE) and the Regalrez1094 tackifying resin (available from Hercules, the hydrocarbon resins of Inc.) of difference amount are mixed with 115g toluene.Data more specifically about adhesive formula used among the embodiment 26 to 30 have been shown in the following table 4.Table 4 also shows the result of peel adhesion test (method A), and its mesostroma is the IC polyimide passivation layer, and the observed result of the rippability of adhesive tape.

Table 4

Embodiment	Adhesive composition			Test
							Thermoplastic elastomer (TPE) consumption (g)	Tackifying resin consumption (g)	Tackifying resin %	Stop pressing (my god)	Peel adhesion (gliw)	Whether peelable
	??26	????48.5	????1.5	?????3	????1	????6							Be
????7							????34	Be
					??27	????47.0			????3.0	?????6	????1	????82	Be
????7	????77	Be
			??28	????45.5			????4.5	?????9			????1	????235	Be
????7	????312	Be
					??29	????44.0			????6.0	?????12	????1	????184	Be
????7	????340	Be
			??30	????42.5			????7.5	?????15			????1	????193	Be
????7	????653	Be

Table 4 shows that tackifying resin can be used for strengthening the peel adhesion strength of adhesive composition.In general, its consumption is less than 10% (weight) (in the total weight of thermoplastic elastomer (TPE) and tackifying resin), better is about 3-8% (weight).Though do not specifically illustrate in table 4, the storage modulus of each embodiment is all more than the Dahlquist normal line.

Embodiment 31 and 32

Press a pair of wafer process adhesive tape of the present invention of embodiment 1 to 11 described preparation, different is the Kraton RP-6906 thermoplastic elastomer (TPE) that adhesive composition comprises different amounts, and the molecular weight that is used as the liquid rubber component is about 25,000 the liquid hydrogenation isoprene copolymer of Kuraray LIR-290.In addition, embodiment 31 and 32 adhesive composition prepare in 1 pint glass container.The wafer process of embodiment 32 also comprises the composition described in priming paint and following examples 37 with adhesive tape.Other data about the adhesive composition of these embodiment see the following form 5.Embodiment 10 repeats to list in table 5.Table 5 also shows the result of peel adhesion test (method A), and wherein, matrix is the photo-sensitive resin of polyimide passivation layer and epoxidation system, and the observed result of the rippability of adhesive tape.

Table 5

Embodiment	Adhesive composition			Test
								Thermoplastic elastic body burden (g)	Liquid rubber content (g)	Liquid rubber %	Substrate	Stop pressing (my god)	Peel adhesion (gliw)	Whether peelable
	??10	????30	????0	????0	Polyimides	??1	????43								Be
Polyimides								??7	????45	Be
					Photoresist	??1	????51				Be
Photoresist								??7	????74	Be
					??31	????47.5	????2.5				????5	Polyimides	??1	????37	Be
Polyimides	??7	????96	Be
				Photoresist				??1	????20	Be
Photoresist	??7	????28	Be
				??32				????45.0	????5.0	????1.0		Polyimides	??1	????56	Be
Polyimides	??7	????105	Be
					Photoresist	??1	????17				Be
Photoresist	??7	????23	Be

Table 5 shows that a spot of liquid rubber can be used for improving the peel adhesion strength of adhesive composition.The consumption of liquid rubber generally is less than 20% (weight) (in the total weight of thermoplastic elastomer (TPE) and liquid rubber), better is about 5% to being less than 20% (weight).Though do not specifically illustrate in table 5, the storage modulus of each embodiment is all more than the Dahlquist normal line.

Wafer process to embodiment 6,10,11,30 and 32 is carried out above-mentioned semiconductor wafer polishing test with adhesive tape, measures their peel adhesion (using the method described in the semiconductor wafer polishing test) then, the results are shown in following table 6.In case remove the wafer process adhesive tape, just check the surface of semiconductor wafer by above-mentioned semiconductor wafer staining test, the results are shown in following table 6, also have the observed result of the rippability of adhesive tape in the table 6.

Table 6

Embodiment	Adhesive composition			Test
							Thermoplastic elastomer (TPE)	Tackifying resin %	Liquid rubber %	Peel adhesion (gliw)	Stain %	Whether peelable
	???6	??Kraton?G-1657(SEBS)	????0	????0	????56	???0							Be
??10							??Kraton?RP-6906(SEPS)	????0	????0	????43	???0	Be
	??11	??Kraton?RP-6912(SEPSEP)	????0	????0	????57	???0							Be
??30							??Kraton?G-1650(SEBS)	????15	????0	????85	???10	Be
	??32	??Kraton?RP-6906(SEPS)	????0	????10	????370	???5							Be

Embodiment 33 to 36

Prepare a series of wafer process adhesive tape of the present invention.The wafer process of each embodiment makes with adhesive composition used in the adhesive tape is following: mix the thermoplastic elastomer (TPE) of 20g and the toluene of 46g in 1 pint glass container, close upper container then, place it in and make its mixing on the three-stage roll mill, until cannot see undissolved thermoplastic elastomer (TPE).At this moment, add the agent of benzophenone photocrosslinking, mixture mixed 1 hour on three-stage roll mill again, to guarantee the dissolving of benzophenone.Then, adhesive composition is coated on the film of the thick PETG of 50 μ m with the method described in the embodiment 1 to 11 and dry.After the drying, make through the film of adhesive coating, so that be 600 mJ/cm to the accumulated dose that sheet provided through the adhesive coating with the speed of 2.9 m/min process under 4 200 watts/inch of a rows' the medium pressure mercury lamp ²(Electronic Instrumentation Technologies is used in light output, and the photometer of the model UM 365H-S of Inc.Sterling VA is measured).More data about the composition of adhesive used among these embodiment sees the following form 7, and wherein the percentage of photocrosslinking agent is in the weight of thermoplastic elastomer (TPE).In the table 7, prepared the adhesive described in the embodiment 5 and 12 again and also tested again.Also show the result of the peel adhesion test (method A) on various matrix (IC polyimide passivation layer and epoxidation system photo-sensitive resin) in the table 7, and the observed result of the rippability of adhesive tape.

Table 7

Embodiment	Adhesive composition		Test
							Thermoplastic elastomer (TPE)	Photocrosslinking agent %	Substrate	Stop pressing (my god)	Peel adhesion (gliw)	Whether peelable
	??12	Kraton?D-1125PX	????0	The IC polyimides	????1	????993							Be
The IC polyimides							????7	????1476	Be
				??33	Kraton?D-1125PX	????0.5				The IC polyimides	????1	????9	Be
The IC polyimides	????7	????11	Be
							??34	Kraton?D-1125PX	????1.0	The IC polyimides	????1	????11	Be
The IC polyimides	????7	????270	Not
				??35	Kraton?D-1125PX	????2.0				The IC polyimides	????1	????675	Not
The IC polyimides	????7	????1178	Not
							??5	Kraton?D-1122X	????0	The IC polyimides	????20min *	????6	Be
The IC polyimides	????3	????454	Be
				Photoresist	????20min *	????3				Be
Photoresist	????3	????213	Be
				??36	Kraton?D-1122X	????0.5				The IC polyimides	????20min *	????1	Be
The IC polyimides	????3	????119	Be
							Photoresist	????20min *	????＜1	Be
Photoresist	????3	????60	Be

^*" min " expression minute.

Table 7 shows that the photocrosslinking agent can be used for reducing the peel adhesion of unhydrided thermoplastic elastomer (TPE) (especially SIS and SBS thermoplastic elastomer (TPE)).Yet, along with the increase of photocrosslinking agent consumption, can cause removing wafer process with adhesive tape after, on adhesive surface, stay adhesive residue.The consumption of photocrosslinking agent generally is about the 0.05-2% (weight) of thermoplastic elastomer (TPE), better is about 0.2-1% (weight), the best 0.3-0.5% (weight) that is about.Though do not specifically illustrate in table 7, the storage modulus of each thermoplastic elastomer (TPE) of embodiment is all more than the Dahlquist normal line.

Then, the other a series of three kinds of wafer process adhesive tapes of preparation the present invention.These adhesive tapes use the adhesive composition (a kind of SEPS thermoplastic elastomer (TPE)) of embodiment 18, add 0%, 0.5% and 1.0% benzophenone photocrosslinking agent (in the weight of thermoplastic elastomer (TPE)) therein.Then, adhesive composition is coated on the film of the thick PETG of 50 μ m with the photocrosslinking agent, dry thickness is about 85 μ m, carries out drying by the method described in the embodiment 1 to 11.After the drying, make through the film of adhesive coating with the speed of 24m/min under single 200 watts/inch medium pressure mercury lamp through 6 times, so that be 600mJ/cm to the accumulated dose that sheet provided through the adhesive coating ²(light output uses model UM365H-S photometer as above to measure.)

Then, the wafer process of evaluation second series is used the peel adhesion (service test method A) of adhesive tape, and the dwell on the IC polyimide substrate is 16 hours.(this IC polyimide substrate is a representational matrix used in the semiconductor wafer process industry, but used different among the polyimides of this IC polyimide substrate and electronic circuit pattern and other embodiment.)。The peel adhesion that does not contain the sample of benzophenone is 170gliw, and the peel adhesion that contains the sample of 0.5% benzophenone is 118gliw, and the peel adhesion that contains the sample of 1.0% benzophenone is 37gliw.These three samples are strippable.The storage modulus of used thermoplastic elastomer (TPE) is all more than the Dahlquist normal line among these embodiment.

The embodiment of second series shows that the photocrosslinking agent can be used for reducing the peel adhesion of adhesive composition effectively, and these adhesive compositions comprise heat of hydrogenation thermoplastic elastic, especially the thermoplastic elastomer (TPE) of styrene-ethylene/propylene-styrene system.

Embodiment 37

In 5 gallons bucket of sealing head (closed-head), add the Kraton RP-6906 thermoplastic elastomer (TPE) of 3.85kg and the toluene of 7.15kg.Then, the bucket of sealing is placed on the large-scale double-roll type grinder mixture is mixed, until cannot see undissolved thermoplastic elastomer (TPE) (about 16 hours).Then, use the retarder thinner of forming by toluene/methyl ethyl ketone/isopropyl alcohol of w/w/weight % of 50/25/25 the thermoplastic elastic liquid solution to be diluted to 25% solid concentration.Use positive-dispacement pump that thermoplastic elastic liquid solution seam pattern head is coated on the backing of the thick PETG of 50 μ m, forming dry thickness is 84 μ m.Backing applies the prime coat of 5 μ m thick (dry thickness) in advance, this priming paint is by the solution composition of solid polymer/solvent of 10%, wherein, solvent is made up of the mixture of toluene/methyl ethyl ketone of 65/35 w/w %, polymer is by neoprene, calcium resinate zinc (calcium zinc resonate) and the terpene resin of equal portions, and the blend of the acrylonitrile-butadiene rubber polymer of equal portions and phenolic resins composition, total umber of wherein back two kinds of materials equals about 60% of total polymer weight.

Priming paint and thermoplastic elastic liquid solution be following drying respectively: make through the film of wet coating respectively with the linear velocity of about 7.6 meters/minute and 3 meters/minute through four district's formula impinging air drying ovens (impinged air dryingoven), the temperature in first district and second district is arranged on about 65 ℃, the 3rd district is arranged on about 80 ℃, and the 4th district is arranged on about 93 ℃.In case leave baking oven, just will be laminated on the dry adhesive surface, then this works of roll-in through the PETG release liner of silicone coating.Then, in the chamber of the cleaning of 1000 grades, will shear slitter with Dusenberry and be cut into independently cylinder shape through the article of roll-in.

Then, use IC polyimide passivation layer and epoxidation system photo-sensitive resin to be matrix, with semiconductor wafer polishing test evaluation embodiment 37.Described in release adhesive force measurement such as the semiconductor wafer polishing test.The results are shown in following table 8, remove in addition in the table 8 wafer process with adhesive tape after the observed result of stromal surface situation.This table also shows three kinds of wafer process adhesive tapes of buying that are widely used in making semiconductor wafer.In general, the adhesive tape that can buy comprises ethylene backing (thick about 125-150 μ m), and acryloid cement layer (thickness is less than 25 μ m) is arranged on backing.

Table 8

Embodiment	Test matrix	Stop pressing (my god)	Peel adhesion (gliw)	Observed result
					??????37	The IC polyimides	??7	??????23	The contamination of trace is arranged accidentally
Photoresist	??1	??????85	Do not stain or other damage
				Oxynitriding		??1	??????34	Do not stain or other damage
Mitsui?Toatsu SB1?35S-B	The IC polyimides	??7	??????85						Moderate contamination
				Photoresist	??1	??????199	Photo-sensitive resin breaks, the serious contamination
	Silicon oxynitride	??1	??????108					Do not stain or other damage
				Mitsui?Toatsu SB205S-I	The IC polyimides	??7	??????170		Seldom stain
Photoresist	??1	??????284	The optics resist layer breaks, the serious contamination
					Nitto?Denko BT150E-AL	The IC polyimides	??7	??????1477	The serious contamination
Photoresist	??1	??????256	Photo-sensitive resin breaks, the serious contamination

Table 8 shows, compares with three kinds of widely used adhesive tapes of buying, and wafer process of the present invention has superior performance with adhesive tape.Wafer process of the present invention only shows the accidental contamination that trace is arranged with adhesive tape on the IC polyimides, and the adhesive tape that can buy shows more serious contamination.On photo-sensitive resin, the wafer process of embodiment 37 does not show any contamination or damage with adhesive tape; And the demonstration of the adhesive tape that can buy is broken and is stain.Though do not specifically illustrate in table 8, the storage modulus of embodiment 37 is more than the Dahlquist normal line.

Embodiment 38 to 43

Prepare a series of wafer process adhesive tape of the present invention.In each embodiment, adhesive composition is following to be made: the solution of the thermoplastic elastomer (TPE) that preparation is made up of the isopropyl alcohol of the toluene and 7% (weight) of the thermoplastic elastomer (TPE), 69% (weight) of 24% (weight).These components are mixed in 1 gallon metal can, mix 24 hours on three-stage roll mill then, until cannot see undissolved thermoplastic elastomer (TPE).Then, adhesive composition is coated on the backing of PETG, this backing has carried out primary coat by described in the embodiment 37.Use 9 inches wide cutter box to carry out the coating of adhesive, the bull nose blade is set, make dry adhesive thickness be about 50 μ m with the speed of 5 feet of per minutes with bull nose blade.Dry then film through the adhesive coating.The variation of thermoplastic elastomer (TPE) and backing thickness sees the following form 9.

Table 9

Embodiment	Thermoplastic elastomer (TPE)			Backing thickness (μ m)
					Trade name	Type	Styrene %
	??38	?Kraton?G-1657	????SEBS					????13	????23
??39				?Kraton?RP-6906	????SEPS	????18	????23
	??40	?Kraton?6912	????SEPSEP					????23	????23
??41				?Kraton?G-1657	????SEBS	????13	????14
	??42	?Kraton?RP-6906	????SEPS					????18	????14
??43				?Kraton?6912	????SEPSEP	????23	????14

Then, hot strength and the elongation characteristics of some embodiment are tested as mentioned above, the results are shown in following table 10.Also show the widely used wafer slice that can buy adhesive tape Nitto Denko V-12-S in the table 10, it comprises that thickness is about the vinyl polymerization backing of 110 μ m and the acrylic pressure-sensitive adhesive that thickness is about 10 μ m.

Table 10

Embodiment	Vertically		Laterally
					Hot strength (kPa)	Percentage elongation (%)	Hot strength (kPa)	Percentage elongation (%)
	??????????38	????209	????164	????264					????68
??????????39					????190	????142	????300	????79
	??????????41	????95	????119	????125					????31
??????????42					????100	????128	????175	????86
	?Nitto?Denko?V-12-S	????135	????262	????90					????363

Table 10 shows, compares with the adhesive tape that can buy, wafer process of the present invention is higher with the transverse tensile strength of adhesive tape, and (at both direction) is littler for percentage elongation.When taking off when contacting with probe with the semiconducter IC chip, the permanent backing with low hot strength or high elongation rate can extend more severely than the permanent backing with higher draw tensile strength or lower percentage elongation.Extend to such an extent that severe backing can cause the manufacturing speed that slows down, because the distance of probe operation has increased.And along with the rigidity increase (being high tensile, low elongation) of permanent backing, it is just easier to handle now more and more general larger-diameter semiconductor wafer.

Also service test method B tests the peel adhesion for various matrix of these embodiment, dwell and the results are shown in Table 12.

Embodiment 44 to 49

Prepare a series of adhesive tapes that apply through adhesive.In each embodiment, adhesive composition comprises the solution of the thermoplastic elastomer (TPE) of 28% solid, its following making: in 1 quart glass container, the isopropyl alcohol of the toluene and 8% (weight) of the thermoplastic elastomer (TPE), 64% (weight) of mixing 28% (weight), airtight container, mixture is gone up at roller platform (roller table) mixed 24 hours, until cannot see undissolved thermoplastic elastomer (TPE).Then, use scraper with bull nose pull bar (bullnose draw bar) that adhesive composition is coated on the backing of PETG that thickness is 50 μ m, the bull nose pull bar has the coating thickness gap that is about 100 μ m.Then, the film that applies through adhesive descended dry 30 minutes at 70 ℃, obtained dry adhesive thickness and was about 20-30 μ m.The variation of thermoplastic elastomer (TPE) sees the following form in 11.

Table 11

Embodiment	Thermoplastic elastomer (TPE)
				Trade name	Type	Styrene %
	????44	????Kraton?D-1113PX	????SIS				????16
????45				????Kraton?D-1125PX	????SIS	????30
	????46	????Kraton?D-1107P	????SIS				????14
????47				????Kraton?D-112P-12	????SIS	????14
	????48	????Kraton?D-1117P	????SIS				????17
????49				????Kraton?RP-6912	????SEPSEP	????23

Service test method B tests the peel adhesion of these embodiment for various matrix, dwell and the results are shown in following table 12.

Table 12

Embodiment	Matrix	Peel adhesion after stopping pressing (gliw)
							4 hours	1 day	3 days	15 days	30 days
		??????????38	Silicon wafer	????19.6	???37.1	????65.3						????67.9	???70.9
??????????39	Silicon wafer						????23.7	???33.9	????50.8	????41.1	???49.3
		??????????40	Silicon wafer	????112.7	???142.3	????190+						????158.6	???169.6
??????????41	Silicon wafer						????28.1	???36.3	????46.7	????50.3	???45.5
		??????????42	Silicon wafer	????38.8	???48.7	????42.2						????47.2	???35.4
	Silicon wafer						????63.9	???190+	????190+	????190+	???190+
		??????????44	Silicon wafer	????104.9	???190+	????190+						????190+	???190+
??????????45	Silicon wafer						????3.4	???23.1	????45.5	????190+	???190+
		??????????46	Silicon wafer	????98.9	???98.1	????190+						????190+	???190+
??????????47	Silicon wafer						????175.3	???114.7	????190+	????190+	???190+
		??????????48	Silicon wafer	????31.8	???190+	????190+						????190+	???190+
??????????49	Silicon wafer						????21.5	???48.0	????81.0	????166.1	???190+
		??Nitto?Denko?V-12-S	Silicon wafer	????70.6	???92.6	????90.4						????95.7	???100
							??????????38	Glass	????116.4	???80.1	????190+	????122.3	???150.6
??????????39	Glass	????76.7	???75.7	????143.2	????146.2	???150.1
							??????????40	Glass	????190+	???171.3	????190+	????190+	???190+
??????????41	Glass	????75.1	???31	????36.7	????74.4	???130.1
							??????????42	Glass	????31.2	???47.6	????54.9	????62.8	???69.9
??Nitto?Denko?V-12-S	Glass	????95.1	???96.8	????102.5	????111.2	???120.5
??????????40	Stainless steel	????91.7	???140.8	????129.9	????157.9	???143.5
							??????????41	Stainless steel	????19.5	???29.1	????54.2	????68.4	???50.9
??????????42	Stainless steel	????21.5	???33.2	????43.4	????48.3	???41.2
							??????????43	Stainless steel	????61.2	???78.0	????190+	????190+	???190+
??Nitto?Denko?V-12-S	Stainless steel	????76.1	???87.6	????88.4	????95.5	???102.5

Above data show that wafer process of the present invention can combine with thin permanent backing with adhesive tape.This is favourable, because it allows to use thicker adhesive phase, this makes the section of semiconductor wafer become easily, and can not switch to backing.In addition, backing is thin can to increase the adhesive tape amount that is wound into the roller shape around mandrel, can reduce the number of times of changing tape roll like this, thereby increase manufacturing efficient.

By using above-mentioned adhesion modifier, can increase or reduce the bonding force of these embodiment selectively.Preferably, wafer process uses adhesive tape in the time more than two weeks, the bonding force that is more preferably in the time showing minimum more than 1 month increases, to obtain long useful life, and needn't after section, take off the semiconducter IC chip at once, take off again in the time of they can being stored to actual needs.Though do not specifically illustrate in table 12, the storage modulus of each embodiment of the present invention is all more than the Dahlquist normal line.

Use above-mentioned semiconductor wafer slice test to evaluate some embodiment.The results are shown in following table 13, it is illustrated in the number of the matrix of flush away adhesive tape in the wafer slice process.

Table 13

Embodiment	The matrix loss
		???????????38	??????29
???????????39	??????297
		???????????41	??????26
???????????42	??????83
		??Nitto?Denko?V-12-S	??????38

Table 13 shows that the given result of preferred embodiment of the present invention (embodiment 38 and 41) is better than the resulting result of the widely used adhesive tape of buying.And wafer process of the present invention is easy to processing with adhesive tape than the adhesive tape that can buy, because adhesive tape of the present invention has thicker adhesive phase.Therefore, use adhesive tape of the present invention, the section of semiconductor wafer just can not switch on the backing.Under the situation of the backing that does not switch to the adhesive tape that to buy, can not carry out the section of semiconductor wafer.If switched to the backing of wafer in the wafer slice process, it will lose efficacy prematurely.And even if use thick adhesive phase, wafer process of the present invention can not stay adhesive residue with adhesive tape on the saw blade of section.

Under the situation that does not depart from the scope of the invention and spirit, to those skilled in the art, be conspicuous to various changes of the present invention and variation.Should be appreciated that the invention is not restricted to the listed embodiment of this paper, these embodiments are used for illustrative purposes only.

Claims (38)

1. adhesive tape is used in semiconductor wafer processing, and it comprises permanent backing and the non-contact adhesive of the one deck on permanent backing, and this adhesive comprises thermoplastic elastomeric block copolymers.

2. adhesive tape is used in semiconductor wafer processing as claimed in claim 1, it is characterized in that the storage modulus of described adhesive composition when room temperature is greater than 1 * 10 ⁶Pascal.

3. adhesive tape is used in semiconductor wafer processing as claimed in claim 1, it is characterized in that described thermoplastic elastomeric block copolymers contains the styrene of 15 to 25% (weight).

4. adhesive tape is used in semiconductor wafer processing as claimed in claim 1, it is characterized in that described thermoplastic elastomeric block copolymers is styrene-ethylene/propylene-styrene block copolymer.

5. adhesive tape is used in semiconductor wafer processing as claimed in claim 1, it is characterized in that described thermoplastic elastomeric block copolymers is styrene-ethylene/propylene-styrene-ethylene/propylene alkene block copolymer.

6. adhesive tape is used in semiconductor wafer processing as claimed in claim 1, it is characterized in that described adhesive also comprises tackifying resin.

7. adhesive tape is used in semiconductor wafer processing as claimed in claim 6, it is characterized in that the content of described tackifying resin is less than 10% (weight), in the total weight of thermoplastic elastomeric block copolymers and tackifying resin.

8. adhesive tape is used in semiconductor wafer processing as claimed in claim 7, it is characterized in that the content of described tackifying resin is about 3 to 8% (weight), in the total weight of thermoplastic elastomeric block copolymers and tackifying resin.

9. adhesive tape is used in semiconductor wafer processing as claimed in claim 1, it is characterized in that described adhesive also comprises liquid rubber.

10. adhesive tape is used in semiconductor wafer processing as claimed in claim 9, it is characterized in that the content of described liquid rubber is less than 20% (weight), in the total weight of thermoplastic elastomeric block copolymers and liquid rubber.

11. adhesive tape is used in semiconductor wafer processing as claimed in claim 10, it is characterized in that the content of described liquid rubber is about 5% to being less than 20% (weight), in the total weight of thermoplastic elastomeric block copolymers and liquid rubber.

12. adhesive tape is used in semiconductor wafer as claimed in claim 1 processing, it is characterized in that this adhesive tape also comprises to be used for the priming paint of adhesives on permanent backing.

13. adhesive tape is used in semiconductor wafer as claimed in claim 1 processing, it is characterized in that this adhesive tape also is included in the interim removable protective pads on the outlier of adhesive.

14. adhesive tape is used in semiconductor wafer processing as claimed in claim 13, it is characterized in that interim removable protective pads is not for containing the polyester film of antitack agent.

15. adhesive tape is used in semiconductor wafer as claimed in claim 1 processing, it is characterized in that this adhesive tape also is included in the semiconductor wafer on the outlier of adhesive.

16. semiconductor wafer processing adhesive tape as claimed in claim 1, it is characterized in that the peel adhesion that this adhesive tape shows for following matrix is about every linear inch width 20 to 500 grams, these matrix are selected from silicon, polyimides, silicon oxynitride passivation layer and photosensitive resin coating.

17. semiconductor wafer processing adhesive tape as claimed in claim 16, it is characterized in that the peel adhesion that this adhesive tape shows for following matrix is about every linear inch width 20 to 200 grams, these matrix are selected from silicon, integrated circuit polyimide passivation layer, silicon oxynitride passivation layer and photosensitive resin coating.

18. adhesive tape is used in semiconductor wafer processing as claimed in claim 16, it is characterized in that this adhesive tape contacts with described matrix, stops being depressed under environmental condition and lacks after 7 days, the peel adhesion of demonstration is about every linear inch width 20 to 500 grams.

19. adhesive tape is used in semiconductor wafer processing as claimed in claim 17, it is characterized in that this adhesive tape contacts with described matrix, stops being depressed under environmental condition and lacks after 7 days, the peel adhesion of demonstration is about every linear inch width 20 to 200 grams.

20. semiconductor wafer processing adhesive tape, comprise permanent backing and the non-contact adhesive of the one deck on permanent backing, wherein, described adhesive contains hydrogenation thermoplastic elastomeric block copolymers and adhesion modifier, and described adhesion modifier is selected from tackifying resin, liquid rubber and photocrosslinking agent.

21. adhesive tape is used in semiconductor wafer processing as claimed in claim 20, it is characterized in that described adhesion modifier is a tackifying resin, its content is about 3 to 8% (weight), in the total weight of hydrogenation thermoplastic elastomeric block copolymers and tackifying resin.

22. adhesive tape is used in semiconductor wafer processing as claimed in claim 20, it is characterized in that described adhesion modifier is a liquid rubber, its content is about 5% to being less than 20% (weight), in the total weight of hydrogenation thermoplastic elastomeric block copolymers and liquid rubber.

23. semiconductor wafer processing adhesive tape as claimed in claim 20, it is characterized in that the peel adhesion that this adhesive tape shows for following matrix is about every linear inch width 20 to 200 grams, these matrix are selected from silicon, integrated circuit polyimide passivation layer, silicon oxynitride passivation layer and photosensitive resin coating.

24. adhesive tape is used in semiconductor wafer processing as claimed in claim 23, it is characterized in that this adhesive tape contacts with described matrix, stops being depressed under environmental condition and lacks after 7 days, the peel adhesion of demonstration is about every linear inch width 20 to 200 grams.

25. adhesive tape is used in semiconductor wafer processing, comprises permanent backing and the non-contact adhesive of the one deck on permanent backing, wherein, described adhesive contains thermoplastic elastomeric block copolymers and photocrosslinking agent.

26. semiconductor wafer processing adhesive tape as claimed in claim 25, it is characterized in that the peel adhesion that this adhesive tape shows for following matrix is about every linear inch width 20 to 200 grams, these matrix are selected from silicon, integrated circuit polyimide passivation layer, silicon oxynitride passivation layer and photosensitive resin coating.

27. adhesive tape is used in semiconductor wafer processing as claimed in claim 26, it is characterized in that this adhesive tape contacts with described matrix, stops being depressed under environmental condition and lacks after 7 days, the peel adhesion of demonstration is about every linear inch width 20 to 200 grams.

28. adhesive tape is used in semiconductor wafer processing, comprises permanent backing and the non-contact adhesive of the one deck on permanent backing, wherein, described adhesive contains the hydrogenation thermoplastic elastomeric block copolymers, and the storage modulus of described copolymer in the time of 20 ℃ is 2.7 * 10 ⁶To 4.0 * 10 ⁶Pascal.

29. adhesive tape is used in semiconductor wafer processing as claimed in claim 28, it is characterized in that described hydrogenation thermoplastic elastomeric block copolymers is styrene-ethylene/propylene-styrene block copolymer.

30. adhesive tape is used in semiconductor wafer processing as claimed in claim 28, it is characterized in that described hydrogenation thermoplastic elastomeric block copolymers is styrene-ethylene/propylene-styrene-ethylene/propylene alkene block copolymer.

31. adhesive tape is used in semiconductor wafer processing, comprises permanent backing and the non-contact adhesive of the one deck on permanent backing, wherein, the storage modulus of described adhesive when room temperature is greater than 1 * 10 ⁶Pascal, it contains thermoplastic elastomeric block copolymers, in addition, this adhesive tape is when being applied in it on following matrix, and contacting with these matrix, stop being depressed under environmental condition and lack after 7 days, show all that for these matrix peel adhesion is about every linear inch width 20 to 500 grams, these matrix are selected from silicon, polyimides, silicon oxynitride passivation layer and photosensitive resin coating.

32. adhesive tape is used in semiconductor wafer processing as claimed in claim 31, it is characterized in that this adhesive tape also comprises adhesion modifier, described adhesion modifier is selected from tackifying resin, liquid rubber and photocrosslinking agent.

33. adhesive tape is used in semiconductor wafer processing as claimed in claim 31, it is characterized in that described thermoplastic elastomeric block copolymers comprises styrene block and ethylene/propene block.

34. adhesive tape is used in the semiconductor wafer section, comprises permanent backing and the non-contact adhesive of the one deck on permanent backing, wherein, the storage modulus of described adhesive when room temperature is greater than 1 * 10 ⁶Pascal, it contains thermoplastic elastomeric block copolymers, in addition, this adhesive tape, and is contacting with this matrix when using for the silicon face of semiconductor wafer, under environmental condition, stop being depressed into and lack after 7 days, show that all peel adhesion is about every linear inch width 20 to 200 grams.

35. semiconductor wafer section adhesive tape as claimed in claim 34, it is characterized in that when being applied in this adhesive tape on the described matrix, and contacting with described matrix, under environmental condition, to stop being depressed into and lack after 15 days, peel adhesion is about every linear inch width 20 to 200 grams.

36. adhesive tape is used in semiconductor wafer section as claimed in claim 26, it is characterized in that the thickness of described permanent backing is about 12 to 25 μ m.

37. adhesive tape is used in semiconductor wafer as claimed in claim 26 section, it is characterized in that described permanent backing is about 120 to 165% at elongation at break longitudinally.

38. the method for processing semiconductor wafer, this method may further comprise the steps:

(a) obtain semiconductor wafer;

(b) semiconductor wafer is bonded to semiconductor wafer processing with on the adhesive face of adhesive tape, described adhesive tape comprises permanent backing and the non-contact adhesive of the one deck on permanent backing, and described adhesive contains thermoplastic elastomeric block copolymers;

(c) become the IC semiconductor chip to come processing semiconductor wafer by the back side of polishing wafer or with wafer slice.