CN119498035A - 固态成像装置及其制造方法 - Google Patents

固态成像装置及其制造方法 Download PDF

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Publication number
CN119498035A
CN119498035A CN202380046173.4A CN202380046173A CN119498035A CN 119498035 A CN119498035 A CN 119498035A CN 202380046173 A CN202380046173 A CN 202380046173A CN 119498035 A CN119498035 A CN 119498035A
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CN
China
Prior art keywords
substrate
transistor
imaging device
solid
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380046173.4A
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English (en)
Chinese (zh)
Inventor
吉田慎一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN119498035A publication Critical patent/CN119498035A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN202380046173.4A 2022-07-26 2023-06-01 固态成像装置及其制造方法 Pending CN119498035A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-119072 2022-07-26
JP2022119072 2022-07-26
PCT/JP2023/020504 WO2024024269A1 (ja) 2022-07-26 2023-06-01 固体撮像装置およびその製造方法

Publications (1)

Publication Number Publication Date
CN119498035A true CN119498035A (zh) 2025-02-21

Family

ID=89706128

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380046173.4A Pending CN119498035A (zh) 2022-07-26 2023-06-01 固态成像装置及其制造方法

Country Status (6)

Country Link
EP (1) EP4564433A4 (https=)
JP (1) JPWO2024024269A1 (https=)
KR (1) KR20250040985A (https=)
CN (1) CN119498035A (https=)
TW (1) TW202406127A (https=)
WO (1) WO2024024269A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6898831B2 (ja) 2017-11-09 2021-07-07 株式会社三共 遊技機
WO2019130702A1 (ja) 2017-12-27 2019-07-04 ソニーセミコンダクタソリューションズ株式会社 撮像装置
WO2019150981A1 (ja) * 2018-02-01 2019-08-08 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP2020047826A (ja) * 2018-09-20 2020-03-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
TWI887068B (zh) * 2018-10-17 2025-06-11 日商索尼半導體解決方案公司 攝像元件及電子機器
JP2020068267A (ja) * 2018-10-23 2020-04-30 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置

Also Published As

Publication number Publication date
JPWO2024024269A1 (https=) 2024-02-01
WO2024024269A1 (ja) 2024-02-01
EP4564433A4 (en) 2025-11-19
EP4564433A1 (en) 2025-06-04
KR20250040985A (ko) 2025-03-25
TW202406127A (zh) 2024-02-01

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