CN1194807C - DC arc plasma equipment and process for preparing micron-class and nano-class powder material - Google Patents
DC arc plasma equipment and process for preparing micron-class and nano-class powder material Download PDFInfo
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- CN1194807C CN1194807C CN 02100122 CN02100122A CN1194807C CN 1194807 C CN1194807 C CN 1194807C CN 02100122 CN02100122 CN 02100122 CN 02100122 A CN02100122 A CN 02100122A CN 1194807 C CN1194807 C CN 1194807C
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Abstract
The present invention relates to a device and method for preparing spherical micron-grade powder and spherical nanometer-grade powder by direct-current arc plasma bodies. The device has the characteristics of long service life (cathode life can reach 50 to 100 hours, and anode life can reach 50 to 200 hours), small electrode wastage, high thermal efficiency, continuous running, controllable particle size and hundred ton-grade annual output of a single device, realizes the industrial-scale production of micron-grade powder and nanometer-grade powder and can produce spherical micron-grade materials and spherical nanometer-grade materials (comprising various powder materials, such as spherical micron-grade SiO2, U3Si2, Sb2O3, etc. and spherical nanometer-grade SiO2, U3Si2, Sb2O3, etc.).
Description
Invention field
The present invention relates to DC arc plasma preparation micron and nanometer grade powder material, the apparatus and method of especially spherical micron and nanometer grade powder material.
Background technology
Because nanometer particle has a lot of good characteristics, can rebuild traditional industry, as the high molecular matrix material, coating, rubber, pigment, pottery, field such as makeup and anti-biotic material can be improved the performance of product greatly, makes the product increment, because excellent product performance, after China entered WTO, quality product can be challenged to the world, so be significant.
To nano material, for example the production method of silicon-dioxide adopts chemical method both at home and abroad mostly, the chemical process long flow path, and technology is loaded down with trivial details, mostly need use soda acid, and environment is caused certain pollution.
The main application of 1-100 micron preparing spherical SiO 2 is to do electronic package material.At present, the annual in the world silicon-dioxide of producing is made about 170,000 tons of packaged material, the silica comprises 70% that makes with mechanical crushing method.Micron-size spherical silicon-dioxide annual turnover is ten thousand tons of 2-5, when the erose silicon-dioxide of mechanical disintegration is made electronic package material, because its packaging density is little, the coefficient of expansion can cause instability to electronic component performance greatly, preparing spherical SiO 2 is made packaged material, because of its good fluidity, packaging density are big, the coefficient of expansion is little and improved the reliability and stability of electronic component work.Domestic because of there not being the preparing spherical SiO 2 product, so mainly from external import, general spherical SiO per ton
2The price of product is 3500 dollars.
It is reported that some factories are annual just to need 1000 tons of spherical micron silica electronics to make packaged material, thereby has selling market preferably at home.
And DC arc plasma device work-ing life of producing superfine powder at present is short, and poor stability can't be realized industrially scalable, and control size and produce spherical micron and nanometer materials does not satisfy the needs in market well.
Therefore the device and method for spherical micron of the production of controllable granularity and nanometer grade powder material exists urgent demand.
Summary of the invention
The device that the purpose of this invention is to provide a kind of DC arc plasma preparation micron and nanometer grade powder.This apparatus features is to use the life-span long (cathode life can reach 50-100 hour, and can reach 50-200 hour anode life), and export license is little, the thermo-efficiency height, and continuously-running can be controlled unitary device SiO to granularity
2Produce hundred tonnes per year, U
3Si
2Produce about 20 tons per year, Sb
2O
3Produce the 500-1000 ton per year, realized the industrial scale production of micron and nanometer grade powder, can produce spherical micron and nanometer materials and (comprise spherical micron and nano level SiO
2, spherical U
3Si
2, nano level Sb
2O
3Etc. various powder body materials).
The present invention uses the physics method, with powder melted by heat and vaporization, prepares micron order and nanometer grade powder material through quenching, especially spherical micron order and nanometer grade powder material.The present invention adopts DC arc plasma to make thermal source (3000-7000K), and the raw material that makes 0.3 micron to 100 microns is (as SiO
2, Sb
2O
3) be ejected in the plasma flame, feed particles melted by heat and vaporization adopt the Supersonic Gas flow nozzle to enter the gravity collecting chamber after quenching, and one-level whirlwind secondary rotoclone collector and cloth bag control of dust obtain micron order and nanometer grade powder.
The accompanying drawing summary
Fig. 1 is the synoptic diagram of apparatus of the present invention, (1) plasma generator; (2) reactor; (3) nodularization gasification burner; (4) air cooling water-cooled expander; (5) awl that gathers materials; (6) negative electrode; (7) electrode protection gas inlet; (8) supplementary anode; (9) arc column; (10) main gas tank; (11) main gas inlet; (12) main anode; (13) powder conveying pipe; (14) plasma flame; (15) supersonic velocity cooling spray pipe; (16) wall expander.
Fig. 2 is the U that apparatus of the present invention are produced
3Si
2The Electronic Speculum figure of nano material.
Fig. 3 is the Sb that apparatus of the present invention are produced
2O
3Nano material Electronic Speculum figure.
Fig. 4 is a process flow sheet of the present invention.
Below in conjunction with accompanying drawing 1 the present invention is described. The inventive system comprises DC arc plasma Generator (1), reactor (2), nodularization gasification burner (3), annular spread is a plurality of on it The air cooling water-cooled quencher (4) of supersonic speed cooling spray pipe (15), the cone (5) that gathers materials, and at collection The cyclone separator that the material cone is following and cloth dust collector (not showing in the drawings).
Wherein the structure of dc arc plasma generator (1) comprising: negative electrode (6), electrode is protected Protect gas access (7), impressed current anode (8), arc column (9), main gas tank (10), main gas entrance (11) and main anode (12). Generator has three electrodes, and negative electrode preferably adopts the cerium tungsten bar, to send out Usefulness when radio, impressed current anode are starting, main anode is the Anode arc root moving region. Draw with high frequency Arc need be introduced argon gas during starting, reduces dash current, the unlikely electrode that burns. It is characterized in that, Introduce inert gas (for example nitrogen, argon gas) protection negative electrode during operation from the electrode protection gas access, For example use high-purity, the nitrogen protection negative electrode such as 99.99%, per hour protecting tolerance is 0.3-0.7M3, preferred 0.5M3 Main gas is the high-purity inert gas, and the nitrogen such as 99.9% or air are (no Preferably) tangentially screw in main gas tank with the stable arc normal combustion.
Between main anode and the impressed current anode, adopt the insulator of good insulating, preferred labyrinth structure poly-four The PVF insulator guarantees insulation good between the high-temperature condition bottom electrode.
Below in conjunction with accompanying drawing process flow sheet of the present invention is described.Plasma flame (14) enters reactor (2) afterwards, cause turbulent high-temperature gas with ledge structure, raw material is that the powder conveying pipe (13) by tangential distribution is introduced reactor (2) with rare gas element, feed particles is evenly filled the air in reactor in turbulent flow, the particle that enters is subjected to uniform heating, and in nodularization and gasification burner (3), finish nodularization and vaporization, after nodularization and the vaporization, enter an air cooling water-cooled expander (4) that speed of cooling is controlled, a plurality of supersonic velocity cooling spray pipes (15) that annular spread is arranged in the top, after the cooling gas that supersonic velocity cooling spray pipe (15) sprays into fully and equably cools off, in wall expander (16), continue cooling, enter the awl (5) that gathers materials then, collect through gravity, cyclonic separator and cloth dust collector are collected, and obtain finished product.After nanometer grade powder disperses with dispersion method, obtain not having the nano-powder of agglomeration.
After plasma flame enters reactor, cause turbulent high-temperature gas with ledge structure, particle is brought reactor into rare gas element, particle be by tangential distribution powder conveying pipe (in a preferred embodiment, its axis is apart from reactor vertical axis 20-25 millimeter, the powder feeding outlet is apart from plasma generator flame export end 15 millimeter), feed particles is evenly filled the air in reactor in turbulent flow, and the particle that enters will be subjected to uniform heating.
Nodularization and vaporization are finished in a nodularization and gasification burner (3), and nodularization and gasification burner (3) need enough height, 300-500 millimeter for example, and inner chamber is made thermal insulation layer with refractory materials, heat energy is fully used and finishes nodularization and vaporescence.
After nodularization and the vaporization, enter an air cooling water-cooled expander (4) that speed of cooling is controlled.It is characterized in that a plurality of supersonic flow jet pipes (15) that this expander top employing is circular layout, this jet pipe has a taper narrow gap, gas velocity is stepless controlled, equably, powerfully cools off the powder body material that is melted and vaporizes, to obtain the spherical and nanometer spherical powder of micron.For example, supersonic flow can be realized with under the upward pressure at 4 kilograms by having the narrow jet pipe connection source nitrogen of taper.By changing the flow velocity of adjustable in pressure control gas,, can control product granularity by regulating the flow velocity of cooling gas.The number of jet pipe decides according to the diameter of expander, and about 12-20 jet pipe that for example distributes on the expander diameter of 200mm is about preferred 16 jet pipes.By adopt this be circular layout have a narrow cooling spray pipe of taper, can realize powder body material fast, evenly, fully the cooling, solved the insufficient and uneven defective of prior art cooling, thereby can obtain the micron and the nano-powder material of spherical and controllable granularity, be one of principal character of the present invention.
Adopt gravity settling then, rotoclone collector and cloth dust collector can obtain spherical micron and nanometer materials finished product.
Another object of the present invention provides the method that DC arc plasma prepares micron and nanometer grade powder.
This method comprises: with the high-temperature plasma jet of dc arc plasma generator emission 3000-7000K; with powder fusing and vaporization; quenching then; obtain powder body material; be characterised in that a plurality of supersonic nozzles by the annular setting cool off; the particle diameter of the adjustable-speed control desired product by regulating cooling draught; and be characterised in that described dc arc plasma generator; it comprises negative electrode (6); electrode protection gas inlet (7); supplementary anode (8), arc column (9), main gas tank (10), main gas inlet (11) and main anode (12).Producer has three electrodes, and negative electrode preferably adopts the cerium tungsten bar, with emitting electrons, and usefulness when supplementary anode is starting, main anode is anode arc root moving region.Use high-frequency arc strike, need introduce argon gas during starting, reduce rush current, the unlikely electrode that burns; And be characterised in that, introduce rare gas element (for example nitrogen, argon gas) protection negative electrode during operation from the electrode protection gas inlet, for example use high purity, the nitrogen protection negative electrode as 99.99%, per hour protecting tolerance is 0.3-0.7M
3, preferred 0.5M
3Main gas is high purity, and the nitrogen as 99.9% tangentially screws in main gas tank with the stable arc trouble-free burning, and reduces the pollution to environment.
A production line of the present invention can year production SiO
2Hundred tonnes, U
3Si
2About 20 tons, Sb
2O
3Industrial micron of 500-1000 ton and nanometer grade powder.
The present invention is the physics method, and nodularization, nanometer process only are 0.5-2 second, and particle diameter is controlled, hard aggregation-free, and environmentally safe.The economic benefit that has very high practical value to become reconciled.
The present invention adopts the physics method, do not need any chemical, high temperature heat source with DC arc plasma 3000-7000k, make material fusing and vaporization, expander through controlled speed of cooling solidifies the fusing drop, and the grain growing speed and the time of may command vaporization back recrystallize, can obtain the powder of different nanometer particle sizes, the entire reaction course time just finished in 1 second, so production process is brief especially.
In addition, utilize the apparatus and method of DC arc plasma preparation micron of the present invention and nanometer grade powder material, can make plate titanium type and anatase titanium dioxide crystal formation be converted into rutile crystal type, it just can be realized in 1 second, adopted the kiln method then need just can finish crystal formation in 2 hours and transformed.These apparatus and method can also prepare the nanometer grade powder of a variety of metals and nonmetal oxide, as zinc oxide, ferric oxide, stannic oxide etc.
Characteristics of the present invention are:
1, technical process is easy, environmentally safe.
2, can obtain two kinds of products simultaneously, micron order and nanometer grade powder material are (as SiO
2Powder).
3, output height has been realized the industrially scalable of multiple micron and nano material.
4, powder product quality height, good fluidity, particle hard aggregation-free.
5, no waste material, product 99 percent is recyclable (as SiO
2Powder).
Below in conjunction with embodiment the present invention is described.
Embodiment 1
With U
3Si
2Be raw material, with direct current arc argon helium of the present invention (main gas) plasma flame fusing U
3Si
2Micro mist through the expander quenching, is collected through gravity settling, cyclonic separator and cloth dust collector, obtains spherical U
3Si
2Finished product, nodularization rate 85～95%, 3 kilograms/hour of feeding amounts.See Fig. 2, wherein a is the U that mechanical crushing method obtains
3Si
2Powder, b, c, d, e and f are the U of apparatus of the present invention preparation
3Si
2Powder.
Embodiment 2
With Sb
2O
3Be raw material, adopt fusing of direct current arc nitrogen (main gas) plasma flame and vaporization, through the expander quenching, cyclonic separator and cloth dust collector are collected, and obtain finished product, annual production 500-1000 ton.See a of Fig. 3, b, c and d show that device of the present invention has obtained 30-60 nanometer Sb
2O
3Powder body material.
Embodiment 3
With SiO
2Be raw material,,, collect, obtain finished product, preparation micron and nano-level sphere SiO through gravity collection, cyclonic separator and cloth dust collector through wall expander and supersonic nozzle quenching with fusing of nitrogen (main gas) plasma flame and vaporization
2
Claims (6)
1; a kind of controllable size; have the production micron of commercial production scale and the device of nanometer grade powder; it is characterized in that this device comprises dc arc plasma generator (1); reactor (2); nodularization gasification burner (3); air cooling water-cooled expander (4); awl (5) gathers materials; and at the cyclonic separator and the cloth dust collector that gather materials below the awl (5); the structure of described dc arc plasma generator comprises: negative electrode (6); supplementary anode (8); arc column (9) and main anode (12); adopt the isolator insulation that at high temperature has good insulation properties between main anode (12) and the supplementary anode (8); introduce the protection of inert gas negative electrode by electrode protection gas inlet (7) during operation; and rare gas element or air by main gas enter the mouth (11) tangentially screw in main gas tank (10) with the stable arc trouble-free burning; and environmentally safe; described air cooling water-cooled expander speed of cooling is controlled; the a plurality of supersonic flow jet pipes (15) that are circular layout are adopted on its top; can eject supersonic flow; gas velocity is stepless controlled; equably; cool off the powder that is melted and vaporizes, to obtain spherical micron and nanometer grade powder powerfully.
2, install according to claim 1, be characterised in that negative electrode adopts the cerium tungsten bar with emitting electrons.
3, install according to claim 1, the structure design that it is characterized in that reactor, make the plasma flame that enters behind the reactor form turbulent high-temperature gas with ledge structure, feed particles is brought reactor into rare gas element, powder conveying pipe by tangential distribution enters reactor, feed particles is evenly filled the air in reactor in turbulent flow, and the particle that enters will be subjected to uniform heating.
4, install according to claim 1, it is characterized in that, finish nodularization and vaporization in described nodularization gasification burner, the nodularization gasification burner needs enough height 300-500 millimeter, inner chamber needs special refractory materials make thermal insulation layer, heat energy is fully used and finishes nodularization and vaporescence.
5, install according to claim 1, wherein said supersonic flow obtains to introduce cooling gas under the upward pressure at 4 kilograms by having the narrow jet pipe of taper.
6; the production method of a kind of micron and nanometer grade powder; comprise and adopt dc arc plasma generator to make high temperature heat source; raw material with the 0.3-100 micron; send in the plasma flame in the reactor; raw material melted by heat and vaporization in several milliseconds; expander quenching through may command quenching speed; again through gravity settling; whirlwind control of dust and cloth bag control of dust; and nano material disperseed; produce micron or nanometer grade powder; the structure of wherein said dc arc plasma generator comprises: negative electrode (6); supplementary anode (8); arc column (9) and main anode (12); adopt the isolator insulation that at high temperature has good insulation properties between main anode (12) and the supplementary anode (8); introduce the protection of inert gas negative electrode by electrode protection gas inlet (7) during operation; and rare gas element by main gas enter the mouth (11) tangentially screw in main gas tank (10) with the stable arc trouble-free burning; and environmentally safe; wherein expander is an air cooling water-cooled expander; employing a plurality of Supersonic Gas flow nozzles that are circular layout; gas velocity is stepless controlled; equably; cool off the powder that is melted and vaporizes powerfully, obtain micron and nanometer grade powder.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02100122 CN1194807C (en) | 2002-01-08 | 2002-01-08 | DC arc plasma equipment and process for preparing micron-class and nano-class powder material |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02100122 CN1194807C (en) | 2002-01-08 | 2002-01-08 | DC arc plasma equipment and process for preparing micron-class and nano-class powder material |
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| CN1381304A CN1381304A (en) | 2002-11-27 |
| CN1194807C true CN1194807C (en) | 2005-03-30 |
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| CN 02100122 Expired - Fee Related CN1194807C (en) | 2002-01-08 | 2002-01-08 | DC arc plasma equipment and process for preparing micron-class and nano-class powder material |
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- 2002-01-08 CN CN 02100122 patent/CN1194807C/en not_active Expired - Fee Related
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