CN103253677A - Plasma beam evaporation-condensation method for preparing nano-grade SiO2 airogel, and electrostatic molding method - Google Patents
Plasma beam evaporation-condensation method for preparing nano-grade SiO2 airogel, and electrostatic molding method Download PDFInfo
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- CN103253677A CN103253677A CN2012100393228A CN201210039322A CN103253677A CN 103253677 A CN103253677 A CN 103253677A CN 2012100393228 A CN2012100393228 A CN 2012100393228A CN 201210039322 A CN201210039322 A CN 201210039322A CN 103253677 A CN103253677 A CN 103253677A
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- airogel
- beam evaporation
- plasma beam
- preparing nano
- molding method
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Abstract
The invention relates to a large-power laminar-flow plasma beam evaporation-condensation method for preparing nano-grade SiO2 airogel, and an electrostatic molding method. With the methods, nano-grade SiO2 airogel production efficiency is improved, the cost is low, and mass production can easily be carried out.
Description
Affiliated technical field
Patent of the present invention relates to the high-power laminar flow beam-plasma of a kind of utilization and steams-coagulate legal system and be equipped with nanometer SiO
2Aerogel and static forming method.Adopt high pressure static electricity electric field and laminar flow beam-plasma to steam-method of the coagulating production SiO that combines
2The novel method of gel can significantly reduce SiO
2The production cost of gel is enhanced productivity, save energy.
Technical background
Produce SiO at present both at home and abroad
2The method of gel mainly contains sol-gel method and PVD physical vaporous deposition, all adopts the physical gas-phase deposite method of PVD in general in the industrial production of comparative maturity.Sol-gel method is exactly to make presoma with the compound that contains high chemically reactive component, and the common whole sol-gel process required time of sol-gel method is grown (mainly referring to digestion time), often needs several days or a few week; Be exactly to have a large amount of nano particles in the colloidal sol in addition, in drying process, will overflow again many gases and organism, and produce contraction.The sol-gel thin films, the general shortcoming that has film layer structure to loosen, physical vapour deposition (PVD) refers to and utilizes certain physical process, and for example evaporation or sputtering phenomenon are realized the transfer of material, be that atom or molecule are transferred on substrate (silicon) surface by the source, and deposit become film.The SiO of physical vaporous deposition preparation
2Gel quality affects is better than sol-gel method, but efficient is low, and energy consumption is bigger, the running cost height.
Summary of the invention
In order to overcome existing sol-gel method SiO
2The deficiency of aerogel production method: efficient is low, the cost height, and of poor quality, the cycle is long, and the high deficiency of energy consumption the invention provides a kind of brand-new SiO
2Aerogel production method: utilize high-power laminar flow beam-plasma to steam-coagulate method production nanometer SiO
2Aerogel and electrostatic adhesion moulding.Utilize high-power laminar flow beam-plasma instant vaporization starting material, form SiO
2Steam, condensation subsequently becomes nano particle, adsorbs these nano particles by the high pressure static electricity electric field again, generates the high printing opacity SiO of porous
2The method of aerogel.
This production method efficient height, cost is low, and the cycle is short, and production process is totally-enclosed, environmental protection and energy saving.
Specific implementation method of the present invention is: utilize high-power laminar flow plasma beam generator to produce the stable long-arc plasma jet of extreme temperatures (above 10,000 degrees centigrade), send raw material powder or particle to the inner instant vaporization of plasma body, condensation by the high precision powder feeder, at last by being with substrate electrostatic adhesion and the moulding of high pressure.By the cotton-shaped nanometer SiO of high-voltage electric field by condensation
2Electric charge on the particle band, recycling electrostatic force absorption also is molded on the substrate of static electrification, has that collection effciency height, density and structure are easily regulated, technology is simple, energy-conservation, low cost and other advantages.
The benefit that the present invention brings is: improved nanometer SiO greatly
2The production efficiency of aerogel, energy scale operation has also significantly reduced the consumption of the energy when having reduced production cost.Physical change and totally-enclosed only takes place in the whole process, the process environmental protection.
Claims (3)
1. adopt the laminar flow beam-plasma to steam-coagulate the method that method and electrostatic adhesion combine and produced nanoporous aerogel.
2. described for the production of nanometer SiO according to claim 1
2Aerogel.
3. describedly can also be used for metal and nonmetal inorganic nano aerogels such as nitride, carbide, boride, oxide compound according to claim 1,2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100393228A CN103253677A (en) | 2012-02-21 | 2012-02-21 | Plasma beam evaporation-condensation method for preparing nano-grade SiO2 airogel, and electrostatic molding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100393228A CN103253677A (en) | 2012-02-21 | 2012-02-21 | Plasma beam evaporation-condensation method for preparing nano-grade SiO2 airogel, and electrostatic molding method |
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| Publication Number | Publication Date |
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| CN103253677A true CN103253677A (en) | 2013-08-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN2012100393228A Pending CN103253677A (en) | 2012-02-21 | 2012-02-21 | Plasma beam evaporation-condensation method for preparing nano-grade SiO2 airogel, and electrostatic molding method |
Country Status (1)
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| CN (1) | CN103253677A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106335903A (en) * | 2016-08-31 | 2017-01-18 | 成都真火科技有限公司 | Preparation method of high-light-transmittance nano-SiO2 aerogel |
| CN106495501A (en) * | 2016-09-29 | 2017-03-15 | 成都真火科技有限公司 | A kind of Nano-meter SiO_22The preparation method of aeroge |
| CN110065946A (en) * | 2018-01-24 | 2019-07-30 | 萨博能源物联网科技(苏州)有限公司 | A kind of nano material and preparation method thereof |
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| JPH05129420A (en) * | 1991-10-31 | 1993-05-25 | Hitachi Ltd | Electrostatic chucking equipment |
| CN1381304A (en) * | 2002-01-08 | 2002-11-27 | 纪崇甲 | DC arc plasma equipment and process for preparing micron-class and nano-class powder material |
| CN1712352A (en) * | 2004-06-25 | 2005-12-28 | 中国科学院过程工程研究所 | Preparation of high-purity nanometer silicon dioxide |
| CN1867397A (en) * | 2003-10-15 | 2006-11-22 | 陶氏康宁爱尔兰有限公司 | Manufacture of resins |
| CN101891202A (en) * | 2010-07-29 | 2010-11-24 | 大连理工大学 | Method for removing boron impurities contained in polysilicon by injecting electron beams |
| JP2012502181A (en) * | 2008-09-03 | 2012-01-26 | ダウ コーニング コーポレーション | Low pressure radio frequency pulsed plasma reactor for the production of nanoparticles |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05129420A (en) * | 1991-10-31 | 1993-05-25 | Hitachi Ltd | Electrostatic chucking equipment |
| CN1381304A (en) * | 2002-01-08 | 2002-11-27 | 纪崇甲 | DC arc plasma equipment and process for preparing micron-class and nano-class powder material |
| CN1867397A (en) * | 2003-10-15 | 2006-11-22 | 陶氏康宁爱尔兰有限公司 | Manufacture of resins |
| CN1712352A (en) * | 2004-06-25 | 2005-12-28 | 中国科学院过程工程研究所 | Preparation of high-purity nanometer silicon dioxide |
| JP2012502181A (en) * | 2008-09-03 | 2012-01-26 | ダウ コーニング コーポレーション | Low pressure radio frequency pulsed plasma reactor for the production of nanoparticles |
| CN101891202A (en) * | 2010-07-29 | 2010-11-24 | 大连理工大学 | Method for removing boron impurities contained in polysilicon by injecting electron beams |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106335903A (en) * | 2016-08-31 | 2017-01-18 | 成都真火科技有限公司 | Preparation method of high-light-transmittance nano-SiO2 aerogel |
| CN106495501A (en) * | 2016-09-29 | 2017-03-15 | 成都真火科技有限公司 | A kind of Nano-meter SiO_22The preparation method of aeroge |
| CN106495501B (en) * | 2016-09-29 | 2019-03-29 | 成都真火科技有限公司 | A kind of Nano-meter SiO_22The preparation method of aeroge |
| CN110065946A (en) * | 2018-01-24 | 2019-07-30 | 萨博能源物联网科技(苏州)有限公司 | A kind of nano material and preparation method thereof |
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Address after: 610000 Sichuan Province, Chengdu Tianfu Avenue North No. 28 Maoye center B tower room 2802 Applicant after: Chengdu Plasmajet Science and Technlogy Co., Ltd. Address before: 610000 No. 9 Xiaojiahe middle street, hi tech Zone, Sichuan, Chengdu Applicant before: Chengdu Plasmajet Science and Technlogy Co., Ltd. |
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Application publication date: 20130821 |