CN119452457A - 用于多晶硅挖掘的配制碱化学品 - Google Patents

用于多晶硅挖掘的配制碱化学品 Download PDF

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Publication number
CN119452457A
CN119452457A CN202380046390.3A CN202380046390A CN119452457A CN 119452457 A CN119452457 A CN 119452457A CN 202380046390 A CN202380046390 A CN 202380046390A CN 119452457 A CN119452457 A CN 119452457A
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CN
China
Prior art keywords
composition
net
weight
silicon
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380046390.3A
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English (en)
Chinese (zh)
Inventor
葛智逵
李翊嘉
吴爱萍
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Versum Materials US LLC
Original Assignee
Versum Materials US LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Materials US LLC filed Critical Versum Materials US LLC
Publication of CN119452457A publication Critical patent/CN119452457A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Detergent Compositions (AREA)
CN202380046390.3A 2022-05-23 2023-03-30 用于多晶硅挖掘的配制碱化学品 Pending CN119452457A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263365154P 2022-05-23 2022-05-23
US63/365,154 2022-05-23
PCT/US2023/065163 WO2023230394A1 (en) 2022-05-23 2023-03-30 Formulated alkaline chemistry for polysilicon exhume

Publications (1)

Publication Number Publication Date
CN119452457A true CN119452457A (zh) 2025-02-14

Family

ID=86007459

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380046390.3A Pending CN119452457A (zh) 2022-05-23 2023-03-30 用于多晶硅挖掘的配制碱化学品

Country Status (7)

Country Link
US (1) US20250304856A1 (cg-RX-API-DMAC7.html)
EP (1) EP4508676A1 (cg-RX-API-DMAC7.html)
JP (1) JP2025517471A (cg-RX-API-DMAC7.html)
KR (1) KR20250012632A (cg-RX-API-DMAC7.html)
CN (1) CN119452457A (cg-RX-API-DMAC7.html)
TW (1) TW202346541A (cg-RX-API-DMAC7.html)
WO (1) WO2023230394A1 (cg-RX-API-DMAC7.html)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6233779B2 (ja) * 2013-11-18 2017-11-22 富士フイルム株式会社 変性レジストの剥離方法、これに用いる変性レジストの剥離液および半導体基板製品の製造方法
US10400167B2 (en) 2015-11-25 2019-09-03 Versum Materials Us, Llc Etching compositions and methods for using same
US11180697B2 (en) 2018-11-19 2021-11-23 Versum Materials Us, Llc Etching solution having silicon oxide corrosion inhibitor and method of using the same
TWI864116B (zh) * 2019-09-30 2024-12-01 美商慧盛材料美國有限責任公司 用於製造半導體裝置期間之選擇性移除氮化矽之蝕刻組合物及方法
KR102951694B1 (ko) * 2019-10-29 2026-04-13 동우 화인켐 주식회사 식각액 조성물, 이를 이용한 패턴 형성 방법 및 어레이 기판의 제조 방법, 및 이에 따라 제조된 어레이 기판
KR102862934B1 (ko) * 2020-09-09 2025-09-22 동우 화인켐 주식회사 실리콘 식각액 조성물, 이를 이용한 패턴 형성 방법 및 어레이 기판의 제조 방법, 및 이에 따라 제조된 어레이 기판

Also Published As

Publication number Publication date
KR20250012632A (ko) 2025-01-24
WO2023230394A1 (en) 2023-11-30
JP2025517471A (ja) 2025-06-05
TW202346541A (zh) 2023-12-01
US20250304856A1 (en) 2025-10-02
EP4508676A1 (en) 2025-02-19

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