CN119171798A - Chip integrated structure of three-phase brushless motor - Google Patents

Chip integrated structure of three-phase brushless motor Download PDF

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Publication number
CN119171798A
CN119171798A CN202411660418.5A CN202411660418A CN119171798A CN 119171798 A CN119171798 A CN 119171798A CN 202411660418 A CN202411660418 A CN 202411660418A CN 119171798 A CN119171798 A CN 119171798A
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CN
China
Prior art keywords
chip
mos
base island
chips
integrated structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202411660418.5A
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Chinese (zh)
Inventor
黄致恺
黄中隽
崔泰伟
李斌
王磊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yuannengxin Technology Shenzhen Co ltd
Original Assignee
Yuannengxin Technology Shenzhen Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yuannengxin Technology Shenzhen Co ltd filed Critical Yuannengxin Technology Shenzhen Co ltd
Priority to CN202411660418.5A priority Critical patent/CN119171798A/en
Publication of CN119171798A publication Critical patent/CN119171798A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P25/00—Arrangements or methods for the control of AC motors characterised by the kind of AC motor or by structural details
    • H02P25/16—Arrangements or methods for the control of AC motors characterised by the kind of AC motor or by structural details characterised by the circuit arrangement or by the kind of wiring
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P27/00—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
    • H02P27/04—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
    • H02P27/06—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using DC to AC converters or inverters

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

The application provides a chip integrated structure of a three-phase brushless motor, which comprises a packaging frame, a motor driving chip and an MOS chip set, wherein the packaging frame is provided with a first base island and pins arranged around the first base island, the motor driving chip and the MOS chip set are integrally arranged on the first base island, and the MOS chip set comprises a plurality of P-MOS chips and a plurality of N-MOS chips. The area of the packaging frame is fully utilized, so that a plurality of chips can be placed in the base island, and the space utilization rate of the PCB is improved and the production cost is reduced by packaging the chips into one chip.

Description

Chip integrated structure of three-phase brushless motor
Technical Field
The application relates to the technical field of semiconductors, in particular to a chip integrated structure of a three-phase brushless motor.
Background
In the early days, integrated circuits were packaged primarily in Single Chip Packages (SCPs), i.e., single chips were packaged in a single circuit board. However, as the functional requirements of electronic devices continue to increase, the single chip package cannot meet the integrated requirements of multiple different functional modules. To solve this problem, multi-chip package (MCP) technology has been developed, which refers to integrating a plurality of chip assemblies having different functions into one circuit board, so that devices have higher integration and smaller package size.
In the prior art, the three-phase brushless motor can respectively weld the MCU chip, the motor driving chip and the MOS chip on the PCB circuit board through the multi-chip packaging technology, however, due to the limited space of the circuit board, the space utilization rate of the circuit board is poor, and the integration level is still not high.
Disclosure of Invention
In view of this, the present application provides a chip integrated structure of a three-phase brushless motor to improve the space utilization in a PCB circuit board.
The application provides a chip integrated structure of a three-phase brushless motor, which comprises a packaging frame, a motor driving chip and an MOS chip set, wherein the packaging frame is provided with a first base island and pins arranged around the first base island, the motor driving chip and the MOS chip set are integrally arranged on the first base island, and the MOS chip set comprises a plurality of P-MOS chips and a plurality of N-MOS chips.
In some embodiments, the chip integrated structure further includes an MCU chip, the motor driving chip and the MOS chip set are disposed on the first base island at intervals, and three or more chips are integrated in the chip integrated structure.
In some embodiments, the chip integrated structure further includes a second base island and an MCU chip, the second base island is disposed at intervals with the first base island, the MCU chip is integrally disposed on the second base island, and three or more chips are integrated in the chip integrated structure.
In some embodiments, the MCU chip, the motor driving chip and the MOS chip set are fixed on the first base island or the second base island by conductive silver paste.
In some embodiments, the MOS chipset includes 3P-MOS chips and 3N-MOS chips, and the P-MOS chips and the N-MOS chips are disposed on the first base island in a tiled or stacked manner.
In some embodiments, the interconnect lines of the MOS chip set are respectively uniformly tiled on each of the P-MOS chip and the N-MOS chip through a plurality of copper wires or aluminum strips.
In some embodiments, the chip integrated structure further includes a plastic package covering the motor drive chip, the MOS chip set, and the package frame, the leads are located between the base island and an edge of the plastic package, and a distance between the base island and the edge of the plastic package is at least less than or equal to 500 μm.
In some embodiments, a distance between the first island and an edge of the molded body is at least less than or equal to 80 μm and greater than or equal to 50 μm in a horizontal direction.
In some embodiments, a distance between the first island and an edge of the molded body is at least 300 μm or less and 100 μm or more in a vertical direction.
In some embodiments, the package frame further includes a ground line region disposed in the base island, and the ground line region is located between the pins and the chip.
The application provides a chip integrated structure of a three-phase brushless motor, which comprises a packaging frame, a motor driving chip and an MOS chip set, wherein the packaging frame is provided with a first base island and pins arranged around the first base island, the motor driving chip and the MOS chip set are integrally arranged on the first base island, and the MOS chip set comprises a plurality of P-MOS chips and a plurality of N-MOS chips. The area of the packaging frame is fully utilized, so that a plurality of chips can be placed in the base island, and the space utilization rate of the PCB is improved and the production cost is reduced by packaging the chips into one chip.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a chip integrated structure of a three-phase brushless motor according to the present application.
Fig. 2 is another schematic structural diagram of a chip integrated structure of a three-phase brushless motor provided by the application.
Detailed Description
The following description of the embodiments of the present application will be made in detail and with reference to the accompanying drawings, wherein it is apparent that the embodiments described are only some, but not all embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to fall within the scope of the application. The various embodiments described below and their technical features can be combined with each other without conflict.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise. In the description of the present application, the meaning of "several" means at least one, such as one, two, etc., unless specifically defined otherwise.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items. The terms "connected," "electrically connected," and "electrically connected" as used herein include any direct and indirect electrical or structural connection. Accordingly, if a first device couples/connects/electrically connects to a second device, that connection may be through a direct electrical/structural connection, or through an indirect electrical/structural connection via other devices or connections.
The application provides a chip integrated structure of a three-phase brushless motor, which comprises a packaging frame, a motor driving chip and an MOS chip set, wherein the packaging frame is provided with a first base island and pins arranged around the first base island, the motor driving chip and the MOS chip set are integrally arranged on the first base island, and the MOS chip set comprises a plurality of P-MOS chips and a plurality of N-MOS chips.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a chip integrated structure of a three-phase brushless motor according to the present application. The chip integrated structure of the three-phase brushless motor in the application can further comprise an MCU chip, wherein the MCU chip, the motor driving chip and the MOS chip group are arranged on the first base island at intervals. Through this kind of setting, can carry out the encapsulation of high integrated level with MCU chip, motor drive chip and MOS chipset, through encapsulating a plurality of chips into a chip, improved the space utilization of PCB circuit board, reduced the manufacturing cost of semiconductor device, through the chip integrated form in this embodiment, three or more integrated circuit chips will be integrated at least in three phase brushless motor.
In an embodiment, when the plurality of chips are disposed in the base island, a suitable lead frame may be selected according to the requirements of the pins, and the lead frame includes SOP, TSSOP, QFN, LQFP frames and the like. The SOP package has small volume and moderate pin number, and is suitable for medium-density integrated circuits. The pins are typically arranged on both sides of the package to facilitate connection to the circuit board. TSSOP is an improvement over SOP, with thinner package thickness and smaller pin pitch. The packaging form is suitable for occasions with more strict space requirements, such as portable equipment and the like. Because of the smaller pin pitch of TSSOP packages, their pin density is relatively high, providing a greater number of pins in a limited package size. QFN is a leadless flat package characterized by the absence of conventional leads, but rather by connection to a circuit board through bond pads at the bottom of the package. The packaging form has higher packaging density and better electrical performance, and is suitable for occasions with higher requirements on performance and reliability. The QFN package has more pins and is closely arranged, so that more functional pins can be provided. LQFP is a thin quad flat package with a low package height and a large pin pitch. This form of packaging is suitable for applications where there are limits to the package height and more pins are required. Pins of an LQFP package are typically arranged on four sides of the package to facilitate connection to a circuit board.
In an embodiment, the above-mentioned MOS chipset may include 3P-MOS chips and 3N-MOS chips, where the P-MOS chips and the N-MOS chips may be disposed on the first base island by tiling or stacking. Specifically, as shown in fig. 1, the MOS chip set is composed of 3P-MOS chips and 3N-MOS chips, which are two basic MOS field effect transistors. The tiling mode refers to that a plurality of MOS chips are placed on a base island side by side, and are connected through metal wires or other connecting means. The stacking mode refers to vertically stacking a plurality of MOS chips, and connecting the MOS chips by a special connection technology.
In an embodiment, since the first islands require integration of a plurality of chips, the area of the selected first islands may be enlarged by etching or stamping according to the actual size of the motor driving chip and the MOS chip set.
Furthermore, when the internal connection of the high-integration chip is aimed at, the internal connection can be evenly paved on the surfaces of each P-MOS chip and each N-MOS chip through a plurality of copper wires or copper alloy wires with relatively large diameters, and the high-integration chip is beneficial to reducing power consumption and improving signal transmission speed due to the fact that the copper wires or the copper alloy wires can provide better electric conductivity, and the resistance and the inductance can be reduced and the signal transmission quality can be improved by selecting the thicker copper wires or copper alloy wires. The copper wires or copper alloy wires are evenly paved on the surface of the MOS chip, so that the current can be uniformly distributed in the chip, and the problems of local overheating, current crowding and the like are avoided. In other embodiments, the interconnect may be made by aluminum strips that provide sufficient electrical conductivity while being relatively low cost.
In another embodiment, please continue to refer to fig. 2, wherein the chip integrated structure further includes a second base island and an MCU chip, the second base island is disposed at a distance from the first base island, and the MCU chip is integrally disposed on the second base island. The MCU chip, the motor driving chip and the MOS chip set are all fixed on the first base island or the second base island through conductive silver glue, and at least three or more integrated circuit chips are integrated in the three-phase brushless motor through the chip integration mode in the embodiment.
In an embodiment, the frame may further include a molding body covering the motor driving chip, the MOS chip set, and the package frame, and the leads are located between the base island and an edge of the molding body, and a distance between the base island and the edge of the molding body is at least 500 μm or less. Further, the pins may include a bonding area and a plurality of pins connected to the bonding area, and the plurality of pins are disposed at intervals.
In one embodiment, 3P in the motor driving chip in fig. 1 or fig. 2 refers to three power output terminals for driving three Positive phases (P represents Positive or Phase, meaning "Positive" or "Phase") of the motor. In a three-phase motor, the three phases are a U-phase, a V-phase, and a W-phase, respectively, which control the rotation of the motor by different combinations of currents. 3N refers to the Negative side or low side drive of the three power outputs corresponding to 3P (N represents Negative). In motor driving, each phase requires a positive terminal and a negative terminal to control the flow of current, thereby achieving motor driving. The 3P and 3N in the motor driving chip control the energizing phase sequence and the phase current of the motor through an internal power semiconductor switch (such as a MOSFET or an IGBT). When the chip receives a PWM signal from the controller, it controls the on and off of the power semiconductor switches according to the duty cycle and phase of the signal, thereby realizing accurate driving control of the motor.
In one embodiment, with continued reference to fig. 1, the distance between the first land and the edge of the molding compound is at least 80 μm or less and 50 μm or more in the horizontal direction. For example, in the horizontal direction, the distance between the first land and the edge of the molding body may be 50 μm, 56 μm, 67 μm, 70 μm, 75 μm, 80 μm, or the like. The distance between the first base island and the edge of the plastic package body is set in the range, so that the distance between the first base island and the left and right sides of the edge of the plastic package body is further shortened, the area of the first base island is further increased, more chips can be placed in the first base island, the space utilization rate of a circuit board is further improved, and meanwhile, enough plastic package distance is reserved, so that the tightness of subsequent plastic packages is guaranteed, and the production cost is reduced.
In one embodiment, the vertical direction is perpendicular to the horizontal direction, and a distance between the first base island and an edge of the plastic package body in the vertical direction is at least 300 μm or less and greater than or equal to 100 μm. Specifically, the distance between the first island and the edge of the molding body may be 100 μm, 120 μm, 230 μm, 340 μm, 390 μm, 420 μm, 440 μm, 300 μm, or the like in the vertical direction. The distance between the first base island and the edge of the plastic package body is set in the range, so that the distance between the first base island and the edge of the plastic package body is shortened, the area of the first base island is increased, a plurality of chips can be placed in the first base island, the space utilization rate of a circuit board is further improved, and meanwhile, the enough plastic package distance is reserved, so that the tightness of subsequent plastic packages is guaranteed, and the production cost is reduced.
In an embodiment, in the horizontal direction and the vertical direction, the distance between the first base island and the edge of the plastic package body is equal spacing distance, so that the space utilization rate of the circuit board can be further improved, and meanwhile, enough plastic package distance is reserved to ensure the tightness of subsequent plastic packages.
In an embodiment, the package frame may further include a ground wire region disposed in the first base island or the second base island, and the ground wire region is located between the leads and the chip. The ground wire area can be arranged around the MCU chip, the motor driving chip and the MOS chip set.
According to the embodiment of the application, the area of the base island is increased by reducing the distance between the base island and the edge of the plastic package body, the area of the package frame is fully utilized, so that a plurality of chips can be placed in the base island, and meanwhile, the area of the package frame is fully utilized, and the space utilization rate of the PCB is improved and the production cost is reduced by packaging the chips into one chip.
The foregoing description is only exemplary of the application and is not intended to limit the scope of the application, as long as the equivalent structure or equivalent flow changes made by the description of the application and the accompanying drawings, such as the combination of technical features between the embodiments, or the direct or indirect application in other related technical fields, are included in the scope of the present application.

Claims (10)

1. The utility model provides a chip integrated configuration of three-phase brushless motor, its characterized in that includes encapsulation frame, motor drive chip and MOS chipset, encapsulation frame have first base island and set up in pin around the first base island, motor drive chip and MOS chipset all integrate set up in on the first base island, the MOS chipset includes a plurality of P-MOS chips and a plurality of N-MOS chips.
2. The chip integrated structure of claim 1, further comprising an MCU chip disposed on the first island at a distance from the motor driving chip and the MOS chip set, wherein three or more chips are integrated in the chip integrated structure.
3. The chip integration structure of the three-phase brushless motor according to claim 1, further comprising a second base island and an MCU chip, wherein the second base island is disposed at an interval from the first base island, the MCU chip is integrally disposed on the second base island, and three or more chips are integrated in the chip integration structure.
4. A chip integrated structure of a three-phase brushless motor according to claim 2 or 3, wherein the MCU chip, the motor driving chip and the MOS chip set are fixed on the first base island or the second base island by conductive silver paste.
5. The chip integrated structure of the three-phase brushless motor according to claim 1, wherein the MOS chip set includes 3P-MOS chips and 3N-MOS chips, and the P-MOS chips and the N-MOS chips are disposed on the first island by tiling or stacking.
6. The chip integrated structure of the three-phase brushless motor according to claim 1, wherein the internal connection of the MOS chip set is realized by uniformly tiling a plurality of copper wires or aluminum strips on each of the P-MOS chip and the N-MOS chip, respectively.
7. The chip integrated structure of claim 1, further comprising a plastic package covering the motor drive chip, the MOS chipset, and the package frame, wherein the leads are located between the islands and edges of the plastic package, and wherein a distance between the islands and edges of the plastic package is at least 500 μm or less.
8. The chip integrated structure of claim 7, wherein a distance between the first island and an edge of the plastic package is at least 80 μm or less and 50 μm or more in a horizontal direction.
9. The chip integrated structure of claim 7, wherein a distance between the first island and an edge of the plastic package is at least 300 μm or less and 100 μm or more in a vertical direction.
10. The chip integrated structure of claim 1, wherein the package frame further comprises a ground wire region disposed in the base island, and the ground wire region is located between the leads and the chip.
CN202411660418.5A 2024-11-20 2024-11-20 Chip integrated structure of three-phase brushless motor Pending CN119171798A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202411660418.5A CN119171798A (en) 2024-11-20 2024-11-20 Chip integrated structure of three-phase brushless motor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202411660418.5A CN119171798A (en) 2024-11-20 2024-11-20 Chip integrated structure of three-phase brushless motor

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CN119171798A true CN119171798A (en) 2024-12-20

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108447844A (en) * 2018-05-11 2018-08-24 上海北京大学微电子研究院 A kind of Modular QFN packaging structure
CN208970509U (en) * 2018-10-29 2019-06-11 深圳市巴丁微电子有限公司 A kind of motor driven power module circuit based on three base island structures
CN213906999U (en) * 2021-01-19 2021-08-06 中山市木林森微电子有限公司 Power module and chip packaging structure thereof
CN213905350U (en) * 2021-01-06 2021-08-06 中山市木林森微电子有限公司 Power module and chip packaging structure thereof
CN215451413U (en) * 2021-08-23 2022-01-07 国硅集成电路技术(无锡)有限公司 Power semiconductor device integrated with driving chip
CN218123390U (en) * 2022-08-04 2022-12-23 上海晶丰明源半导体股份有限公司 Lead frame, packaging structure and electronic equipment
CN115700919A (en) * 2023-01-03 2023-02-07 华羿微电子股份有限公司 SIP (Session initiation protocol) packaging module and packaging method thereof
CN221727106U (en) * 2024-01-26 2024-09-17 元能芯科技(深圳)有限公司 A semiconductor device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108447844A (en) * 2018-05-11 2018-08-24 上海北京大学微电子研究院 A kind of Modular QFN packaging structure
CN208970509U (en) * 2018-10-29 2019-06-11 深圳市巴丁微电子有限公司 A kind of motor driven power module circuit based on three base island structures
CN213905350U (en) * 2021-01-06 2021-08-06 中山市木林森微电子有限公司 Power module and chip packaging structure thereof
CN213906999U (en) * 2021-01-19 2021-08-06 中山市木林森微电子有限公司 Power module and chip packaging structure thereof
CN215451413U (en) * 2021-08-23 2022-01-07 国硅集成电路技术(无锡)有限公司 Power semiconductor device integrated with driving chip
CN218123390U (en) * 2022-08-04 2022-12-23 上海晶丰明源半导体股份有限公司 Lead frame, packaging structure and electronic equipment
CN115700919A (en) * 2023-01-03 2023-02-07 华羿微电子股份有限公司 SIP (Session initiation protocol) packaging module and packaging method thereof
CN221727106U (en) * 2024-01-26 2024-09-17 元能芯科技(深圳)有限公司 A semiconductor device

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