CN1188988A - Dielectric composition and integrated circuit device - Google Patents
Dielectric composition and integrated circuit device Download PDFInfo
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- CN1188988A CN1188988A CN97120526A CN97120526A CN1188988A CN 1188988 A CN1188988 A CN 1188988A CN 97120526 A CN97120526 A CN 97120526A CN 97120526 A CN97120526 A CN 97120526A CN 1188988 A CN1188988 A CN 1188988A
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- Prior art keywords
- acid ester
- poly amic
- amic acid
- alkyl
- diacid chloride
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- 239000000203 mixture Substances 0.000 title claims description 32
- 150000002148 esters Chemical class 0.000 claims abstract description 43
- 229920005575 poly(amic acid) Polymers 0.000 claims abstract description 43
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 31
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 239000002253 acid Substances 0.000 claims description 14
- 150000005690 diesters Chemical class 0.000 claims description 14
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 13
- 150000004985 diamines Chemical class 0.000 claims description 13
- 125000003118 aryl group Chemical group 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 7
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 6
- UKJLNMAFNRKWGR-UHFFFAOYSA-N cyclohexatrienamine Chemical group NC1=CC=C=C[CH]1 UKJLNMAFNRKWGR-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 210000000481 breast Anatomy 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 5
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims 8
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 abstract description 3
- 125000005370 alkoxysilyl group Chemical group 0.000 abstract 1
- 150000002466 imines Chemical class 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 26
- 239000000126 substance Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 12
- -1 pottery Chemical compound 0.000 description 11
- 150000008064 anhydrides Chemical class 0.000 description 9
- 229920001721 polyimide Polymers 0.000 description 8
- 239000004215 Carbon black (E152) Substances 0.000 description 6
- 229930195733 hydrocarbon Natural products 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 5
- 239000003513 alkali Substances 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 150000002430 hydrocarbons Chemical class 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 125000001931 aliphatic group Chemical group 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000000376 reactant Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 125000004494 ethyl ester group Chemical group 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 3
- NSGXIBWMJZWTPY-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(F)(F)CC(F)(F)F NSGXIBWMJZWTPY-UHFFFAOYSA-N 0.000 description 2
- CNODSORTHKVDEM-UHFFFAOYSA-N 4-trimethoxysilylaniline Chemical compound CO[Si](OC)(OC)C1=CC=C(N)C=C1 CNODSORTHKVDEM-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 125000001118 alkylidene group Chemical group 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- FLKPEMZONWLCSK-UHFFFAOYSA-N diethyl phthalate Chemical compound CCOC(=O)C1=CC=CC=C1C(=O)OCC FLKPEMZONWLCSK-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 2
- 125000004957 naphthylene group Chemical group 0.000 description 2
- CTSLXHKWHWQRSH-UHFFFAOYSA-N oxalyl chloride Chemical compound ClC(=O)C(Cl)=O CTSLXHKWHWQRSH-UHFFFAOYSA-N 0.000 description 2
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 125000005369 trialkoxysilyl group Chemical group 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 1
- JRBJSXQPQWSCCF-UHFFFAOYSA-N 3,3'-Dimethoxybenzidine Chemical compound C1=C(N)C(OC)=CC(C=2C=C(OC)C(N)=CC=2)=C1 JRBJSXQPQWSCCF-UHFFFAOYSA-N 0.000 description 1
- GWHLJVMSZRKEAQ-UHFFFAOYSA-N 3-(2,3-dicarboxyphenyl)phthalic acid Chemical compound OC(=O)C1=CC=CC(C=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O GWHLJVMSZRKEAQ-UHFFFAOYSA-N 0.000 description 1
- ANEQGVKJIBRYFF-UHFFFAOYSA-N 3-ethyloxetane-2,4-dione Chemical class CCC1C(=O)OC1=O ANEQGVKJIBRYFF-UHFFFAOYSA-N 0.000 description 1
- AIVVXPSKEVWKMY-UHFFFAOYSA-N 4-(3,4-dicarboxyphenoxy)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1OC1=CC=C(C(O)=O)C(C(O)=O)=C1 AIVVXPSKEVWKMY-UHFFFAOYSA-N 0.000 description 1
- VILWHDNLOJCHNJ-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)sulfanylphthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1SC1=CC=C(C(O)=O)C(C(O)=O)=C1 VILWHDNLOJCHNJ-UHFFFAOYSA-N 0.000 description 1
- AVCOFPOLGHKJQB-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)sulfonylphthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1S(=O)(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 AVCOFPOLGHKJQB-UHFFFAOYSA-N 0.000 description 1
- KSMVBYPXNKCPAJ-UHFFFAOYSA-N 4-Methylcyclohexylamine Chemical compound CC1CCC(N)CC1 KSMVBYPXNKCPAJ-UHFFFAOYSA-N 0.000 description 1
- QZHXKQKKEBXYRG-UHFFFAOYSA-N 4-n-(4-aminophenyl)benzene-1,4-diamine Chemical compound C1=CC(N)=CC=C1NC1=CC=C(N)C=C1 QZHXKQKKEBXYRG-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000005466 alkylenyl group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- LBDSXVIYZYSRII-IGMARMGPSA-N alpha-particle Chemical compound [4He+2] LBDSXVIYZYSRII-IGMARMGPSA-N 0.000 description 1
- 125000004653 anthracenylene group Chemical group 0.000 description 1
- 125000005428 anthryl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C(*)=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005815 base catalysis Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 229940106691 bisphenol a Drugs 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 125000000392 cycloalkenyl group Chemical group 0.000 description 1
- 125000005356 cycloalkylalkenyl group Chemical group 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- FNIATMYXUPOJRW-UHFFFAOYSA-N cyclohexylidene Chemical group [C]1CCCCC1 FNIATMYXUPOJRW-UHFFFAOYSA-N 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 125000001188 haloalkyl group Chemical group 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000005826 halohydrocarbons Chemical group 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 125000000876 trifluoromethoxy group Chemical group FC(F)(F)O* 0.000 description 1
- PZJJKWKADRNWSW-UHFFFAOYSA-N trimethoxysilicon Chemical group CO[Si](OC)OC PZJJKWKADRNWSW-UHFFFAOYSA-N 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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Abstract
The invention relates to an improved dielectric combination and an integrated circuit device. The device comprises: (1) an underlay; (2) metallic circuit lines arranged on the underlay; (3) dielectric material near the circuit lines. The dielectric material comprises imine polyamic acid ester terminated with the alkyl of alkoxy silyl.
Description
The dielectric composition that the present invention relates to improve and comprise the integrated circuit of the dielectric substance that this has improved.
Polyimides is used for making the integrated circuit comprise chip (for example chips wire tail end), thin-film package body and printed circuit board (PCB) known in the art.Polyimides can be used for forming dielectric intermediate layer, passivation layer, α particle barrier layer and stress-buffer layer.Polyimides especially can be used as the interlayer dielectric material, make with multicore sheet module on the electric conductor insulation of chip wiring interconnection.This is known as the film wiring.Multicore sheet module is the intergrade that encapsulates between chip and circuit board.In general, multicore sheet module is known in the prior art.Multicore sheet module is made up of bus plane, signals layer and ground plane (planes), this module be chip carry power supply and between the chip on the module, distribute input/output signal or with signal allocation to circuit board/distribute from circuit board.
In microelectronics industry, wish for example to improve current densities in memory and the logic chip always, thereby improve their performance and reduce their cost at the multilevel integration device.In order to realize above-mentioned target, wish to reduce the minimum feature size of chip, circuit line width and reduce the dielectric constant of the dielectric substance that is inserted for example is so that crosstalking and capacitive couplings not have can make more crypto set of circuitry lines under the situation of increase.Polyimides has about 3.0 dielectric constant, and has for bearing and relevant process operation and needed machinery of thermal cycle and the hot property of semiconductor manufacturing.But, desirablely be that the dielectric substance of following integrated circuit (IC) apparatus demonstrates than the shown lower dielectric constant (for example,＜3.0) of dielectric constant that goes out of polyimides.
So, the purpose of this invention is to provide a kind of improved integrated circuit (IC) apparatus that comprises the dielectric substance that has improved.
Other purpose and advantage will see too clearly from following disclosure.
The present invention relates to improved dielectric substance, this material comprises best by the alkyl-blocked curing poly amic acid ester of trialkoxysilyl.The invention still further relates to integrated circuit (IC) apparatus.In one embodiment, this device comprises: (i) substrate; (ii) be positioned at the interconnection system metallic circuit line on the substrate and (iii) be positioned near the improved dielectric substance (on circuitry lines and/or between circuitry lines) of circuitry lines.
The invention still further relates to the method for integrated circuit package device and manufacturing integrated circuit (IC) apparatus of the present invention.
Narration neutralization below provides more detailed disclosure of the present invention from accompanying drawing.
Fig. 1 is the sectional view of the part of integrated circuit (IC) apparatus of the present invention.
Fig. 2-5 shows the method for making integrated circuit (IC) apparatus of the present invention.
Fig. 6-8 shows the other method of making integrated circuit (IC) apparatus of the present invention.
The example of IC apparatus of the present invention is shown among Fig. 1. This device generally comprises substrate 2, Metal electric route 4 and improved dielectric substance 6 of the present invention. This substrate 2 has therein formation Vertical metal bolt 8. This circuit line be used in the distributor the signal of telecommunication and provide power for this device The input and from this device output signal. Suitable IC apparatus generally comprise multilayer by vertical gold The circuit line that belongs to the bolt interconnection.
The suitable substrate of device of the present invention comprise silicon, silica, glass, silicon nitride, pottery, Aluminium, copper and GaAs. Other suitable substrate is known for the person skilled in the technical field . In the multilevel integration device, the bottom of the circuit line of insulation also can be used as substrate.
Suitable circuit line generally comprises the metal species conductive material, such as copper, aluminium, tungsten, gold, silver or it Alloy. The circuit line can be selected the plating lining, such as nickel, tantalum or chromium layer, or other layer as resistance Gear layer or adhesive layer (for example SiN, TiN).
Best example of the present invention is related to one or more IC chips signal and work electricity is provided The integrated circuit package device (multi-chip module) of stream, it comprises: (1) has leading of being connected with circuit board The substrate of electricity body (ii) is positioned at a plurality of electric insulations that replace on the substrate and the layer of conduction, wherein at least One conductive layer comprises improved polyimide film of the present invention and (iii) makes electric conductor, conductive layer and collection The a plurality of paths that become circuit chip mutually to be electrically connected.
Integrated circuit package device is the intergrade that encapsulates between IC chip and circuit board. Collection Become circuit chip to be installed on the integrated circuit package device, and packaging system is installed on the circuit board.
The substrate of packaging system generally is an inert substrate, as glass, silicon or pottery.This substrate selectively has the integrated circuit that is arranged on wherein.This substrate has electric conductor, as the I/O pin (I/O pin) that packaging system is electrically connected with circuit board.The layer of a plurality of electric insulations and conduction (layer with the conducting channel in the dielectric insulation material of being arranged on) is alternately to be superimposed upon on the substrate.These layers generally form on substrate by method successively, and wherein each layer is to form in independent procedure of processing.
This packaging system also comprises recipient, is used to accept integrated circuit (IC) chip.Suitable recipient comprises and is used to accept chip I/O pin or the plugboard of metal solder district (pad) (being used to be welded to chip).In general, packaging system also comprises a plurality of general vertically alignings so that make I/O pin, conductive layer and be arranged on a plurality of electric pathways that integrated circuit (IC) chip in the recipient produces electrical interconnection.The method of this functional structure body and manufacturing integrated circuit package device is known for skilled person in the art, as US patent 4,489,364,4,5 08,981,4,628, disclosed content in 411 and 4,811,082, these patent documentations are introduced into for reference.
Critical feature of the present invention is a kind of dielectric substance, it on circuitry lines, near and/or between circuitry lines.In the multilevel integration device, dielectric substance is usually flattened and as forming the substrate of one deck circuitry lines down.Dielectric substance comprises by (RO)
m(R ")
nThe imidization poly amic acid ester of SiR '-(end group) end-blocking, wherein m is 1,2 or 3; M+n=3; R and R ' are alkyl and R " is hydrogen or alkyl.End group is preferably single, two or three C
1-6Alkoxy C
1-6Alkyl or aryl (for example phenylene, benzal, naphthylene or anthrylene).Here employed alkyl is meant that carbon atom is connected in the remainder of molecule and those groups based on hydrocarbon (list or difunctional) that mainly have the characteristic of hydrocarbon.Alkyl comprise following these: (1) alkyl; That is aliphatic group (C for example,
1-C
10Alkyl or alkenyl and C
5-C
10Cycloalkyl or cycloalkenyl), aromatic group, the aromatic group that aliphatic group replaces, aliphatic group or similar group that aromatic group replaces.These groups are known for skilled person in the art; Example comprises methyl (being methylene) for difunctional's alkyl, ethyl, butyl, hexyl, octyl group, decyl, dodecyl, myristyl, octadecyl, cyclohexyl, phenyl, naphthyl, benzyl and anthryl (all isomers are also included within interior).(2) alkyl of Qu Daiing; That is, contain the substituent group of nonhydrocarbon, in the context of the present invention, this substituting group does not change the main hydrocarbon characteristic of this group.All that skilled person in the art knows suitable substituents (for example halogen, alkoxyl, carbalkoxy, nitro).(3) assorted group; That is, the group that in the present invention in full, mainly has the hydrocarbon characteristic, it contains the atom except the carbon atom that exists in chain of being made of carbon atom or ring.Suitable hetero-atom is conspicuous for those skilled in the art, and comprises, for example, and nitrogen, oxygen and sulphur.
In general, in based on the group of hydrocarbon, will have and be no more than about 3 substituting group or hetero-atom and preferably be no more than one for per 10 carbon atoms.
The poly amic acid ester that has end group is preferably from (i) diamines; (ii) the reaction of diester two carboxylic acid halides (for example chlorine) and aminoalkoxy silane obtains.
Suitable diamines has formula H
2NRNH
2, wherein R is
Wherein X be selected from alkylidene chain with 1-3 carbon atom or halohydrocarbon atom, carbonyl ,-O-,-S-,-SO
2-and-the N-alkyl.This alkylidene chain can further be replaced by haloalkyl (for example trifluoromethyl) and phenyl.Aromatic ring is selectively replaced by for example trifluoromethoxy or similar group.The suitable R of diamines comprises:
Wherein y is selected from trifluoromethyl, phenyl or substituted-phenyl.Suitable aromatic diamine is: right-phenylenediamine; 4,4 '-diamino-diphenyl amine; Benzidine; 4,4 '-diamino-diphenyl ether; 1, the 5-diaminonaphthalene; 3,3 '-dimethyl-4,4 '-diaminourea-biphenyl; 3,3 '-dimethoxy benzidine; 1, two (right-amino-benzene oxygen) benzene of 4-; 1, two (right-amino-benzene oxygen) benzene of 3-; 2, two [4-aminophenyl] HFC-236fa of 2-.
R in the diamines also can be aliphatic series or cyclic aliphatic base, as cycloalkylidene, and cyclohexylidene for example.Suitable aliphatic diamine comprises 1,4-DACH and two (4-aminocyclohexyl) methane.
Best diamines is that X is the diamines of＞C (phenyl) (trifluoromethyl) in above general formula.Preferably diamines be 9,9 '-two (4-aminophenyl) tablets held before the breast by officials (FDA); 4,4 '-oxydianiline and 1, two (4-the aminophenyl)-1-phenyl-2,2 of 1-, 2-HFC-143a (3FDA).
The diester diacid chloride aptly from corresponding dicarboxylic anhydride system with following general formula to:
Wherein Ar is selected from:
Suitable dicarboxylic anhydride comprises:
1,2,4, the 5-phthalic acid
The benzophenone dicarboxylic anhydride
2, two (3,4-dicarboxyl phenyl) the propane dicarboxylic anhydrides of 2-
3,3 ', 4,4 '-biphenyl tetracarboxylic dianhydride
Two (3,4-dicarboxyl phenyl) ether dicarboxylic anhydride
Two (3,4-dicarboxyl phenyl) thioether dicarboxylic anhydride
Bisphenol-A bis ether dicarboxylic anhydride
2, two (3,4-dicarboxyl phenyl) the HFC-236fa dicarboxylic anhydrides of 2-
2,3,6,7-naphthalene tetracarboxylic acid dianhydride
Two (3,4-dicarboxyl phenyl) sulfone dicarboxylic anhydride
1,2,5,6-naphthalene tetracarboxylic acid dianhydride
2,2 ', 3,3 '-biphenyl tetracarboxylic dianhydride
3,4,3 ', 4 ' benzophenone tetracarboxylic dianhydride; With
The terphenyl dicarboxylic anhydride
The diester diacid chloride is 1,2,4 preferably, 5-benzene diacid chloride two acid esters.
This diester diacid chloride is by allowing corresponding acid anhydrides sequentially form with suitable pure and mild oxalyl chloride reaction.Suitable alcohol is ethanol.Imidization speed can change because of the electronics substituting effect of the ester group ethyl ester substituting group of ethanol (for example from), and other the suitable alcohols that is used for the present invention is known in the art skilled person, as disclosed content in Hergenrother " HighPerformance Polymers " (1994) 139 pages, it is for reference that its disclosure is introduced into this paper.Suitable diester diacid chloride is 1,2,4,5-benzene tertacarbonic acid diester diacid chloride, biphenyltetracarboxyacid acid diester diacid chloride and bis oxide diethyl phthalate diacid chloride.Diamines that other is suitable and diester diacid chloride are known for skilled person in the art, as US patent 4,720,539 and the US patent application series number No.08/058 that transfers the possession of of common unsettled generality, in 303 (on Mays 10th, 1992), it is for reference that its disclosure is introduced into this paper.
Suitable aminoalkoxy silane has general formula (H
2NR ' Si (R ")
m(OR)
n, m+n=3 (n preferably 3) wherein, R is C preferably
1-6Alkyl and R ' are positioned at interval base amino and that silicon atom is middle, preferably C
1-6Alkylidene (for example methylene) or do not have hetero-atom aryl (not having heteroatomic hydrocarbon aryl) as phenylene, benzal or naphthylene.Because R is decomposed and removes from form in course of reaction, R can be any organic group of disturbance reponse acceptably, and these groups should be considered to be equal to described herein.If n is lower than 3, R " preferably hydrogen or rudimentary C
1-6Alkyl.Silane is the aminophenyl trimethoxy silane preferably.Other suitable silane reaction thing is known for skilled person in the art.
In order to form the poly amic acid ester reactant, (for example diamines and diester diacid chloride were in 1: 1 ratio in suitable stoichiometric amount with three kinds of precursor, the amount of the silane that calculates from the Carothers equation is enough to provide the polymer product of desired molecule amount) be dissolved in the suitable solvent (as NMP), obtain the poly amic acid ester of alkoxysilylalkyl end-blocking.The molecular weight (Mn) of the poly amic acid ester reactant of alkoxysilylalkyl end-blocking is about 5,000-20,000g/mol.The poly amic acid ester of suitable alkoxysilylalkyl end-blocking has following structure:
Wherein R is phenyl or C
1-6Alkyl and poly amic acid ester substituting group are ethyls.
If desired, poly amic acid ester can separate and purify.The polyamic acid ester solution has highly filledly (for example＞40-50wt%) but has low viscosity.Poly amic acid ester can be deposited on the substrate by the known technology of the standard form with film.
Form dielectric composition by solidifying poly amic acid ester.Poly amic acid ester has and is higher than 375 ℃ high imidization temperature.For hardening composition, with said composition directly or be heated to higher temperature in the mode that substep carries out and (for example be warming up to 200 ℃ through 2 hours, be increased to then 400 ℃ and kept 2 hours) make the complete imidization of poly amic acid ester, carry out cross-condensation with the silicyl active group.
The dielectric constant of dielectric composition of the present invention under 80 ℃ is lower than 3.2, comparatively ideal be lower than 3.0 and better be to be lower than 2.8.Dielectric composition (for example is lower than 1000 * 10 having low thermal coefficient of expansion under the high temperature under 450 ℃
-6[being 1000ppm], comparatively ideal is to be lower than 500 * 10
-6, better is to be lower than 100 * 10
-6), film ftractures in heat treatment process subsequently to avoid.Said composition has the machinery of enhancing and isotropism, optical property and the dielectric properties of polishing characteristic and enhancing.Composition also has the 100MPa of being lower than, and is preferably lower than the thermal stress of 50MPa.In addition, the mechanical performance that dielectric composition had is enough to the opposing cracking and can carries out planarization process (planarized) with chemistry and mechanical means, so that form additional circuit layer with photolithographicallpatterned in the multilevel integration device.Dielectric composition has the toughness of high puncture voltage, enhancing and high crack resistance, even also is like this for thick film under high ambient humidity.Dielectric composition is optically transparent and can adheres to substrate well.Minimum contraction (for example being lower than 10%) takes place in this dielectric composition in heating process.
The invention still further relates to the method for making integrated circuit (IC) apparatus.Referring to Fig. 2, the first step of a method example relates to one deck dielectric composition 10 of the present invention is set on substrate 2, and said composition comprises the poly amic acid ester that trialkoxysilyl is alkyl-blocked.Substrate 2 is shown has vertical metal bolt 8.Poly amic acid ester is dissolved in suitable solvent such as N, and N '-DMPU (DMPU) in NMP or the analog, and is coated on the substrate by known method such as spin coated or spraying or knife scraping method.This solution has uniquely highly filled (for example 40-50%), causes the complanation that strengthens.Second step of this method comprises heats paramount temperature with poly amic acid ester, makes poly amic acid ester generation chain extension and imidization.Said composition is preferably in the existence heating down of alkali such as amine or bronsted alkali.This base catalysis imidization makes it to have lower initial solidification temperature, for example is lower than 200 ℃.This alkali is that the organic amine this point is suitable.This amine preferably has higher boiling point and removes by heating after reaction finishes.Suitable alkali is N methyldiethanol amine.Other suitable alkali is known for skilled person in the art, as is disclosed in the US patent 5,206,117, and it is for reference that its disclosure is introduced into this paper.
Referring to Fig. 3, the 3rd step of this method comprises with photolithographicallpatterned 10 carries out pattern etching to the layer of dielectric composition, thereby forms groove 12 (groove) in composition layer.Show that in Fig. 3 groove 12 extends to substrate 2 and extends to metal bolt 8.The pattern etching of employing photolithographicallpatterned generally comprises (i) and apply positivity or negative photoresist on dielectric composition layer 10, as the photoresist of being sold by Shipley or HoechstCelanese (AZ photoresist); (ii) photoresist is exposed to radiation source such as electromagnetic radiation, (iii) on photoresist, makes image development, for example the figure in the photoresist is developed with suitable alkaline developer as UV or UV far away in pattern mode (passing through mask); (iv) use suitable transfer techniques such as reactive ion etching method (RIE), pass dielectric composition layer 10 with image transfer to substrate 2.Suitable photoetching process pattern etching technology is well-known for skilled person in the art, as is disclosed in people such as Thompson " introduction of microlithography technology " (1994), and its disclosure is introduced into for reference.
Referring to Fig. 4, in the 4th step of the method that forms integrated circuit of the present invention, depositing metal film 14 on the dielectric layer 10 that has pattern.The preferred metal material comprises copper, tungsten and aluminium.Can metal suitably be deposited on the patterned dielectric layer by CVD, electronics and non-electro-deposition, sputter or the similar approach that known technology such as chemical method vapour deposition (CVD), plasma strengthen.
Referring to Fig. 5, the final step of this method comprises removes unnecessary metal material (for example making metal film 14 complanations), thereby generally speaking film 14 keeps identical height with dielectric layer 10 through pattern etching.Finish complanation by using chemical/mechanical polishing or selectivity wet method or dry etching.Suitable chemical/mechanical polishing is known for skilled person in the art.
Referring to Fig. 6-8, wherein show other example of the method for manufacturing integrated circuit (IC) apparatus of the present invention.The first step of method is included in depositing metal film 16 on the substrate 18 in this example.Also can have vertical metal bolt 20 on the substrate 18.Referring to Fig. 7, in second step of this method, by mask metal film is carried out pattern etching with photolithographicallpatterned, form groove 22.Referring to Fig. 8, in the 3rd step of this method, poly amic acid ester layer 24 of the present invention is deposited on the metal film 16 of pattern etching.In the final step of this method, poly amic acid ester is heated and makes the poly amic acid ester imidization.In selectable mode dielectric layer is carried out planarization process, for following process in the multilevel integration is prepared.
The following examples are for method of the present invention is described in further detail.Detailed preparation method falls in the scope of method of above more general description, is usefulness for example.The purpose of embodiment should not thought the scope of the present invention that defines just for example.
Synthesizing of the polyamic acid ethyl ester of embodiment 1 trimethoxysilyl end-blocking
Between-1,2,4,5-benzene tertacarbonic acid diester diacid chloride (PMDA)
1, two (4-the aminophenyl)-1-phenyl-2,2 of 1-, 2-HFC-143a (3FDA)
In the three-neck flask that overhead, nitrogen ingress pipe and charging hopper are housed, add 9.48mmol (3.2456g) 3FDA, 1.04mmol (0.2218g) aminophenyl trimethoxy silane, 25mmol (2g) pyridine and 50mL distillation NMP.System keeps under the chlorine purge continuously.Reactant mixture is cooled to 0 ℃.With PMDA diester diacid chloride (10mmol, 3.4716g) be dissolved in～the 100mL carrene in and quantitatively be transferred in the charging hopper.Dichloromethane solution is added drop-wise in the reactant mixture.After reinforced the end, allow polymerization reaction at room temperature carry out a night.Go out poly-(amic acid ethyl ester) by the agglomeration separation in methyl alcohol, filter and drying in 60 ℃ vacuum drying oven.(Mn＝10,000)
To be dissolved among the NMP from poly-(amic acid ethyl ester) oligomer of embodiment 1.Formed transparent solution, solids content is 45wt%.This solution casts in the film that forms the 1-10 micron thickness on the glass plate by spin coated subsequently.By at N
2Under the atmosphere, respectively at 200 ℃, 300 ℃ and 400 ℃ of following heated polymerizable thing films were finished imidization in 1 hour.The polyimide film that solidifies is slowly cooled to room temperature.The polyimide film that solidifies is cracking not, and the phase farmland that demonstrates is 1000 dusts, is about 3.0 at 80 ℃ of following dielectric constants; The about 45mPa of thermal stress and be 75 * 10 at 450 ℃ of following thermal coefficient of expansions
-6
Though about specific case description the present invention, but detailed description of the present invention should not thought limited range of the present invention, obviously, various under the premise without departing from the spirit and scope of the present invention examples, changes and improvements all should keep, and it should be understood that these examples that are equal to comprise within the scope of the invention.
Claims (15)
1, a kind of integrated circuit (IC) apparatus comprises:
(a) substrate;
(b) be positioned on the substrate the metallic circuit line and
(c) be positioned near the dielectric composition of circuitry lines, said composition comprises by (RO)
m(R ")
nThe poly amic acid ester of SiR '-end-blocking, R and R ' they are respectively alkyl in the formula; R " is hydrogen or alkyl; M is 1,2 or 3 and n+m=3, and the thermal coefficient of expansion of this dielectric composition is lower than 1000 * 10
-6
2, the described device of claim 1 is characterized in that poly amic acid ester is by three C
1-10Alkoxysilyl C
1-10Alkyl or three C
1-10Alkoxysilyl aryl end-blocking.
3, the described device of claim 2, it is characterized in that poly amic acid ester comprise be selected from 9,9 '-two (4-aminophenyl) tablets held before the breast by officials (FDA), 4,4 '-oxydianiline and 1, two (4-the aminophenyl)-1-phenyl-2,2 of 1-, the diamines of 2-HFC-143a and be selected from 1,2,4,5-benzene tertacarbonic acid two C
1-6Arrcostab diacid chloride, bis oxide phthalic acid two C
1-6Arrcostab diacid chloride and biphenyltetracarboxyacid acid two C
1-6The diester diacid chloride of Arrcostab diacid chloride.
4, the described device of claim 2 is characterized in that dielectric composition has and is lower than 3.0 dielectric constant.
5, a kind of method of making integrated circuit comprises:
(a) one deck dielectric composition is set on substrate, said composition comprises by (RO)
m(R ")
nThe poly amic acid ester of SiR '-end-blocking, R and R ' they are respectively alkyl in the formula; R " is hydrogen or alkyl; M is 1,2 or 3 and n+m=3;
(b) heating combination makes poly amic acid ester generation imidization; The thermal coefficient of expansion of the poly amic acid ester of imidization is lower than 1000 * 10
-6
(c) dielectric layer is carried out pattern etching with photolithographicallpatterned;
(d) at depositing metal film on the dielectric layer of pattern etching; With
(e) film is carried out planarization process to form integrated circuit.
6, the described method of claim 5 is characterized in that poly amic acid ester is by three C
1-10Alkoxysilyl C
1-10Alkyl or three C
1-10Alkoxysilyl aryl end-blocking.
7, the described method of claim 6, it is characterized in that poly amic acid ester comprise be selected from 9,9 '-two (4-aminophenyl) tablets held before the breast by officials (FDA), 4,4 '-oxydianiline and 1, two (4-the aminophenyl)-1-phenyl-2,2 of 1-, the diamines of 2-HFC-143a and be selected from 1,2,4,5-benzene tertacarbonic acid two C
1-6Arrcostab diacid chloride, bis oxide phthalic acid two C
1-6Arrcostab diacid chloride and biphenyltetracarboxyacid acid two C
1-6The diester diacid chloride of Arrcostab diacid chloride.
8, a kind of method of making integrated circuit comprises:
(a) depositing metal film on substrate;
(b) metal film is carried out pattern etching with photolithographicallpatterned;
(c) at deposit one deck dielectric composition on the metal film of pattern etching, said composition comprises by (RO)
m(R ")
nThe poly amic acid ester of SiR '-end-blocking, R and R ' they are respectively alkyl in the formula; R " is hydrogen or alkyl; M is 1,2 or 3 and n+m=3;
(d) heating combination makes poly amic acid ester generation imidization; The thermal coefficient of expansion of the poly amic acid ester of imidization is lower than 1000 * 10
-6
9, the described method of claim 8 is characterized in that poly amic acid ester is by three C
1-10Alkoxysilyl C
1-10Alkyl or three C
1-10Alkoxysilyl aryl end-blocking.
10, the described method of claim 9, it is characterized in that poly amic acid ester comprise be selected from 9,9 '-two (4-aminophenyl) tablets held before the breast by officials (FDA), 4,4 '-oxydianiline and 1, two (4-the aminophenyl)-1-phenyl-2,2 of 1-, the diamines of 2-HFC-143a and be selected from 1,2,4,5-benzene tertacarbonic acid two C
1-6Arrcostab diacid chloride, bis oxide phthalic acid two C
1-6Arrcostab diacid chloride and biphenyltetracarboxyacid acid two C
1-6The diester diacid chloride of Arrcostab diacid chloride.
11, a kind of quilt (RO)
m(R ")
nThe poly amic acid ester of SiR '-end-blocking, wherein R and R ' are respectively C
1-6Alkyl or phenyl; R " be hydrogen, C
1-6Alkyl or phenyl; M is 1,2 or 3 and n+m=3.
12, the described poly amic acid ester of claim 11 is characterized in that poly amic acid ester is by three C
1-10Alkoxysilyl C
1-10Alkyl or three C
1-10Alkoxysilyl aryl end-blocking.
13, a kind of for integrated circuit (IC) chip provides the integrated circuit package device of signal and operating current, it comprises:
(i) has the substrate of the electric conductor that is connected with circuit board;
(ii) be positioned at a plurality of electric insulations that replace on the substrate and the layer of conduction, wherein one deck comprises by (RO) at least
m(R ")
nThe imidization poly amic acid ester of SiR '-end-blocking, wherein R and R ' they are respectively alkyl; R " is hydrogen or alkyl; M is 1,2 or 3 and n+m=3; The thermal coefficient of expansion of the poly amic acid ester of imidization is lower than 1000 * 10
-6With
A plurality of paths that electric conductor, conductive layer and integrated circuit (IC) chip are electrically connected mutually.
14, the described device of claim 13 is characterized in that poly amic acid ester is by three C
1-10Alkoxysilyl C
1-10Alkyl or three C
1-10Alkoxysilyl aryl end-blocking.
15, the described device of claim 14, it is characterized in that poly amic acid ester comprise be selected from 9,9 '-two (4-aminophenyl) tablets held before the breast by officials (FDA), 4,4 '-oxydianiline and 1, two (4-the aminophenyl)-1-phenyl-2,2 of 1-, the diamines of 2-HFC-143a and be selected from 1,2,4,5-benzene tertacarbonic acid two C
1-6Arrcostab diacid chloride, bis oxide phthalic acid two C
1-6Arrcostab diacid chloride and biphenyltetracarboxyacid acid two C
1-6The diester diacid chloride of Arrcostab diacid chloride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN97120526A CN1188988A (en) | 1996-10-28 | 1997-09-26 | Dielectric composition and integrated circuit device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US739,135 | 1996-10-28 | ||
| CN97120526A CN1188988A (en) | 1996-10-28 | 1997-09-26 | Dielectric composition and integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1188988A true CN1188988A (en) | 1998-07-29 |
Family
ID=5175974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN97120526A Pending CN1188988A (en) | 1996-10-28 | 1997-09-26 | Dielectric composition and integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1188988A (en) |
-
1997
- 1997-09-26 CN CN97120526A patent/CN1188988A/en active Pending
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