CN1186479A - Point-of-use ammonia purification for electronic component manufacture - Google Patents
Point-of-use ammonia purification for electronic component manufacture Download PDFInfo
- Publication number
- CN1186479A CN1186479A CN95197886A CN95197886A CN1186479A CN 1186479 A CN1186479 A CN 1186479A CN 95197886 A CN95197886 A CN 95197886A CN 95197886 A CN95197886 A CN 95197886A CN 1186479 A CN1186479 A CN 1186479A
- Authority
- CN
- China
- Prior art keywords
- ammonia
- vapor
- workstation
- liquid
- osculating element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01C—AMMONIA; CYANOGEN; COMPOUNDS THEREOF
- C01C1/00—Ammonia; Compounds thereof
- C01C1/02—Preparation, purification or separation of ammonia
- C01C1/024—Purification
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Vaporization, Distillation, Condensation, Sublimation, And Cold Traps (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
Abstract
Highly purified ammonia for use in processes for the production of high-precision electronic components is prepared on-site by drawing ammonia vapor from a liquid ammonia reservoir, passing the vapor via a filter to filter out particles of less than 0.005 micron in size, and scrubbing the filtered vapor in a high-pH aqueous liquid-vapor contact unit.
Description
Related application for reference
The application is application on January 7th, 1994, a division and the part continuation application thereof of application number 08/179001 common pending application.
The invention belongs to the manufacturing field of high-accuracy electronic component, concrete with as the preparation of the ammonia of this class component manufacturing reagent treatment and dispose relevant.
Background of invention
In each operation that electronic component is made, pollution is a key issue.It is most important to quality product to pollute control, and, be productive rate and the economic benefit that obtains expection, also institute is essential to guarantee the clean level of manufacturing environment to the utmost.Especially in the occasion of making highly dense circuit and ultraprecise bearing, record-header and LCD display unit, these require just more harsh.
Source of pollution comprise the shared device in the manufacturing, operating personnel and production equipment.In most cases, adopt " clean room " technology, as isolation, air filtration, special device and special clothing and outer cover thing can be avoided the operator and make contacting of stock yard, can make the level that is reduced to permission of polluting.Yet, for super hot investment casting, can allow the nargin of the horizontal upper limit minimum, so source of pollution control is very important.
If there is in the manufacturing processed ammonia to exist, then can cause special difficulty, this be because, liquefied ammonia contains solid and volatile impunty simultaneously, and is wherein many harmful to electronic component.Impurity level and content are in extensive range, specifically depend on source of pollution and treatment process.Before ammonia was used for electronic element production line, above-mentioned all impurity must be removed in advance.
For satisfying above-mentioned standard, produce shared device department and must spend high cost, so that provide the source of ammonia to obtain high quality ammonia from the limited rank that can allow.Have only the qualified source of goods to use, the new source of goods must be through qualification authentication before acceptance.So expend and lack the cost that handiness has significantly strengthened element.
In addition, for satisfying the regulations of the Ministry of Communications, the concentration of ammonium hydroxide when transportation should not surpass 30%, and this also brings other difficulty.
Obviously, need reliable method, in order to the ammonia of enough purity to be provided, in order to do making with the qualified product of high yield production superelevation precision element and satisfying the requirement of advanced electronics technology.
The invention summary
Have found that, provide the method for ultra-pure ammonia to be to superelevation precision electronic element production line: to adopt a cover fielded system, it is from ammonia liquor storage vessel extraction ammonia steam, make ammonia steam by the micro-filtration strainer again, in liquid-vapor osculating element (as scrubber tower or bubbling unit), wash filtered steam subsequently with height-pH purified water.The unique distinction of this discovery is, technical grade ammonia can be changed into the high-purity ammon that is fit to high-accuracy manufacturing, and saves conventional tower rectifying.Play the single hop refinery distillation by storage vessel extraction ammonia steam itself, promptly remove non-volatile matter or the height impurity that boils, as oxide compound, carbonate and the hydride of alkalies and alkaline earth, the halogenide of transition metal and hydride, and height boil hydrocarbon and halocarbon.Chang Kejian can react volatile impunty in the technical grade ammonia, such as some transition metal halide, the halogenide of III-th family metal and hydride, the halogenide and the hydride of some IV family element, and halogen, thought before that these impurity must be removed through rectifying, have now found that, it can be removed to the degree that is fit to high-accuracy production by gas washing.This discovery is unusual, this be because, on the laveur technology tradition only as the removal of macro-scale impurity, but not microscale impurity.Among the present invention, the liquid-vapor osculating element can reduce to the level of semiconductor wafer being made detrimental impurity＜every element 1ppb or amount to below the 30ppb.Even higher occasion, also can behind gas washing, go rectifying in purity requirement again.Yet, an advantage of the invention is that even comprise rectifying, the liquid-vapor osculating element also can significantly reduce the load and the design requirement of rectifying tower, and then impels product purity higher.Such as the impurity close such as reactive hydrides, fluorochemical and muriate with the ammonia boiling range except after, simplified the design of rectifying tower greatly.Generally speaking, described system and method is suitable for the supply of the on-the-spot ammonia of high-accuracy production line, but the purifying of the suitable especially semiconductor wafer purifying station ammonia of the present invention.
Many characteristics of the present invention, embodiment, purposes and advantage are not difficult to be found out by following introduction.
The accompanying drawing summary
Fig. 1 is the illustration of ultra-pure ammonia productive unit engineering application flow of the present invention.
Fig. 2 is the semiconductor production line module map, wherein can be used in combination ammonia purification system shown in Figure 1, thereby as one of the concrete enforcement of the present invention example.
Detailed Description Of The Invention and preferred embodiment
According to the present invention, ammonia steam elder generation is from the vapor portion extraction of ammonia liquor supply and storage vessel.Extraction ammonia steam plays the single hop refinery distillation, residues in liquid phase because of making some solid and the height impurity that boils.The supply storage vessel can be the filling tank of arbitrary routine or the storage vessel of other suitable splendid attire ammonia, and ammonia can be no aquosity, or is the aqueous solution.Storage vessel can be kept under atmospheric pressure, strengthens ammonia as desire and flows in intrasystem, also can be kept above atmospheric pressure.As preferably, storage vessel is subjected to thermal control, and temperature is preferably 15～35 ℃ between 10～50 ℃, more preferably 20～25 ℃.
Thereby by extraction ammonia steam from vapor phase except impurity comprise periodic table of elements I and II family metal, and described metal contacts the amination metal that generates with ammonia; Simultaneously, also comprise the oxide compound and the carbonate of described metal, and hydride (such as beryllium hydride and magnesium hydride); Have again, also comprise iii group element and oxide compound thereof, and described element hydride and halid ammonium adducts; In addition, also comprise transition metal hydride; In addition, also comprise heavy hydrocarbon and halocarbon (as pump oil).
Ammonia steam from the storage vessel extraction passes through filtering unit, to hold all solids of wrapping up under the arm except steam.Micro-filtration and ultra filtration unit and film can derive from commercially available and direct use.The rank and the type of strainer are selected for use on request.Preferred filters can be except 0.005 micron or bigger particle, and more preferably the person can be except the little particle to 0.003 micron of size.
Steam after the filtration contacts with height-pH purifying (preferred deionization) water.Height-pH purified water is preferably ammonia soln, and contacting of described solution and filter back steam can be finished in the various unit that are exclusively used in the liquid-vapor contact.For example, steam feeds the solution storage vessel with the bubbling form.Another example is, contacts in scrubber tower, and as preferably, solution circulates through scrubber tower, so that its enrichment is to saturated.Scrubber tower should adopt the conventional scrubber tower with the reflux type operation.Though service temperature is not important, the preferably operation between about 10～50 ℃ of described tower is between more preferably about 15～35 ℃.Equally, working pressure is also unimportant, but described tower is preferably at normal atmosphere～be higher than between normal atmosphere 30psi and move.Generally, described tower comprises conventional tower packing, so as to the efficient contact between liquid gas is provided, and as preferred, still contain a mist and removes section.
A preferred herein example is: about 3 feet of used pack height (0.9 meter), internal diameter about 7 inches (18cm), corresponding 0.84 cubic feet of fill volume (24 liters); Operation about 0.3 inch of water of pressure drop (0.075kPa), liquid flooding is less than 10%, 2.5 gallons of the about per minutes of corresponding nominal liquid return (0.16 liter of per second), or in liquid flooding 20% time, 5 gallons of the about per minutes of liquid return (0.32 liter of per second); Put under the filler gas inlet, and the liquid inlet is positioned on the filler but removes under the section at mist.The preferred tower packing of this example is that nominal size is less than the tower diameter.Pack density is higher in the mist removal section of described tower, but structure is similarly conventional structure.It should be noted that all narrations of this section and size only are illustration, each system parameter all is variable.
In a typical operation, at the beginning of the operation of driving, feed ammonia earlier and make de-ionate saturated, make for the initial scrubbing solution that uses.Scrubber tower is in service, regularly discharges a small amount of tower bottoms body, in order to avoid impurities accumulation.
For example, the impurity that needs to remove through scrubber tower comprises reactive volatile matter, as silane (SiH
4) and arsine (AsH
3), the halogenide of phosphorus, arsenic and antimony and hydride, the halogenide of common transition metal, and the halogenide and the hydride of III and IV family metal.
As a further alternative, height-pH purified water still can contain one or more additives, decompose or remove in order to do the impurity that makes individual species, this class impurity can not through the single hop rectifying in liquefied ammonia supply and the storage vessel except.A kind of possible additive is a hydrogen peroxide, and it can make organic dirt decompose.Other possible additive is the catalyzer that can decompose the particular types of certain dirt.
So far, each unit of having addressed already all can be intermittently, continuous or semicontinuous mode is moved, wherein after dual mode be preferred.The volumetric flow rate of ammonia purification system process stream is also non-key, and variation range is extensive.Yet, being suitable under most situations of the present invention, the flow rate of the ammonia by system is between between about 200cc/h～500000L/h.
Before the use, the ammonia of drawing from scrubber tower can be further purified through rectifying, and this depends on ammonia to be purified is to be used for which kind of concrete manufacturing processed.For example, if desire is used for chemical vapour desposition with ammonia, comprise in the system that then dewatering unit and rectification cell are useful.Rectifying tower also can be intermittently, continuous or semicontinuous mode is moved.During intermittent operation, working pressure generally can be 300 pounds of/square inch absolute pressures (2068kPa), and the batch process amount is 100 pounds (45.4kg).In this example, 8 inches of tower diameters (20cm), high 72 inches (183cm), 30% liquid flooding is operation down, velocity of steam 0.00221 feet per second (0.00067 meter per second), 1.5 inches of plate hights (3.8cm) such as monolithic theoretical stage, totally 48 theoretical stages.In this example, still kettle diameter about 18 inches (45.7cm), long 27 inches (68.6cm), reflux ratio 0.5,60 of recirculated cooling water temperature ins (15.6 ℃), 90 of temperature outs (32.2 ℃).It only is illustration equally, herein; Rectifying tower structure and operating parameters all are variable.
Relevant with purposes, the ammonia behind the purifying can be through rectifying, also can not rectifying; During use, ammonia can be purified gas, also can be the aqueous solution, and under one situation of back, purifying ammonia is dissolved in purifying (preferred deionization) water.Blending ratio and mode are followed routine.
Fig. 1 is the illustration of the flow process of description ammonia purification unit of the present invention.Ammonia liquor is stored in the storage vessel 11, and ammonia steam 12 by stopping valve 13, flows through strainer 14 subsequently again from the vapor portion extraction of storage vessel.Filter back ammonia steam 15 behind pressure-regulator 16 regulating flows, feed the scrubber tower 17 that includes filled section 18 and mist removal snubber 19.Saturated ammoniacal liquor 20 descending flowing, ammonia steam is up to flow, and liquid is by recycle pump 21 circulations, and liquid level is by liquid level sensor 22 controls.Waste liquid 23 is regularly discharged from the scrubber tower bottom liquid place of accumulating.De-ionate 24 is supplied scrubber tower 17 after pump 25 superchargings.Ammonia 26 behind gas washing imports one of following three kinds of approach, also promptly:
(1) rectifying tower 27 that the ammonia work is further purified.Gained distillates ammonia 28 and passes to user port then.
(2) dissolving unit 29, at that time, the ammonia and the de-ionate 30 miscible generation aqueous solution 31 pass to user port then.For the industry operation of multi-user's port, the aqueous solution can lodge in the storage tank, draws through independent pipeline again, delivers to each user port of same factory.
(3) directly transmit the line of pipes 32 of gaseous ammonia to user port.Above-listed the 2nd, 3 kind of approach do not use rectifying tower 27, and suitable generation contains the ammonia of not enough 100ppt (part per trillion part) metallic impurity.But, comprise that rectifying tower 27 is optimal way, is used for roasting kiln or chemical vapor deposition (CVD) as ammonia to some occasion.For example, if ammonia is used for CVD, then rectifying tower can be except condensate (as oxygen and nitrogen) not, and the latter has disadvantageous effect to CVD.In addition, the ammonia of drawing from scrubber tower 17 is saturated by water, so can establish dewatering unit in scrubber tower 17 and 27 on rectifying tower, this selects to make a decision according to the performance of rectifying tower and efficient.
Described arbitrary approach all can generate or be ammonia steam or be the logistics of the aqueous solution, and this logistics can be divided into the tributary more than two strands again, and different subscriber stations is delivered in each tributary, and is like this then purification unit can provide the ammonia of purifying the while to a large number of users station.
Fig. 2 illustrates and is used for a kind of conventional purification system that semi-conductor is made.Unit the 1st of this purification system is that etching reagent is removed station 41, and herein, aqueous hydrogen peroxide solution 42 mixes mutually with sulfuric acid 43 and is coated on semiconductor surface, to dispose etching agent.Continuing is scouring stage 44, and herein, de-ionate is in order to the flush away etching solution.The downstream that is right after scouring stage 44 is a purifying station 45,, uses ammonia and aqueous hydrogen peroxide solution herein.The presentation mode of this solution is one of following two kinds.A kind ofly be, the ammoniacal liquor 31 that draws from dissolving shown in Figure 1 unit 29 mixes mutually with aqueous hydrogen peroxide solution 46, and gained mixture 47 is delivered to purifying station 45.Another kind is that the pure ammonia 32 of gaseous state that draws from the identical numbering pipeline of Fig. 1 blasts aqueous hydrogen peroxide solution 48, generates similar mixture 49, delivers to purifying station 45 more equally.After ammonia/hydrogen peroxide mixture purified, semi-conductor was delivered to the 2nd scouring stage 50 then,, removes cleansing soln with de-ionate herein.The next stop is purifying station 54 again, and herein, the spirit of salt aqueous solution 55 and hydrogen peroxide 56 mix and be used for the further purification of semiconductor surface mutually.Be final purification station 57 subsequently, herein, de-ionate is in order to except HCl and H
2O
2, be final dry station 58 after again.Independent or batch wafer 61 is put on the wafer support 52, and is carried successively along each workstation by robot 63 or other device that can realize processed in sequence.But device is carried fully automated, partial automation or is not had automatization fully.Merit attention, flow to the on-site preparation method of purifying HCl at acid purification station 54 and method of supplying can with Fig. 1 ammonia purification system in roughly the same.
System shown in Figure 2 only is one of purification system example in the semi-conductor manufacturing.Generally speaking, it is different how many purification system that is used for high-accuracy manufacturing and that shown in Figure 2 have, and also, or saves one or more unit shown in the figure, or replenish or unit that alternate figures is not shown.Yet the notion of the high-purity ammoniacal liquor on-site preparation of the present invention all is suitable for all these type systematics.
Such as the such workstation of purifying station 45 (Fig. 2), adopting ammonia and hydrogen peroxide has been that whole industry member is known as the semi-conductor purification medium.Though proportioning is adjustable, right nominal system generally consists of: de-ionate, and 29% ammonium hydroxide (weight is base), and 30% hydrogen peroxide (weight is base), corresponding mixed volume ratio is 6: 1: 1.This scavenging agent is in order to except organic residue, and, with the ultrasonic agitation coupling of the nearly 1MHz of frequency, in order to except little particle to submicron-scale.
The ammonia purification system is close to the ammonia user port on the production line and puts, and only leaves short distance between purification unit and production line.For the factory of a plurality of purifying ammonia user ports is arranged, another alternative is that the ammonia that comes from purification unit is before arriving at user port, earlier through a process tank.Each user port is supplied with by the independent export pipeline of drawing from process tank.Under these two kinds of situations, ammonia all can be directly used in semiconductor chip, and, except that small-sized online storage tank, need not packing or transportation, also need not to store, so avoided contacting of ammonia and potential pollution source, and the occasion outside making shared device is carried out the chemical manufacturing and during with preceding preparation, pollute but usually unavoidable.Spacing between purification system ammonia outlet and production line user port is generally less than about 1 foot (30cm).If purification system is the full factory central system of pump to two above subscriber stations, then this distance can be bigger.The super clean line of pipes that delivery system is made by nonpollution material is finished.In majority was used, stainless steel or polymkeric substance (high density polyethylene or fluorinated polymer) may be for adopting.
Because of being close between ammonia clean unit and production line, so the unit water can carry out purifying according to the semi-conductor manufacturer's standard.This class standard is generally semi-conductor industry circle and adopts, and, for the art technology expert and industrial practice is arranged and the empirical people of standard, also known.According to this class standard, the purification process of water comprises ion-exchange and reverse osmosis.Ion exchange process generally comprises following major part or all unit: chemical treatment, as killing biology with chlorination; Husky filter is in order to remove particle; Activated carbon filtration is in order to remove dechlorination and organic residue; Diatomite filtration; Anionresin is in order to remove strong ionic acid; The mixed bed that contains the yin, yang ion exchange resin simultaneously is in order to remove other ion; Sterilization comprises chlorination and UV-irradiation; And the filtration of warp≤0.45 micron filter.One or several unit of the alternative ion exchange process of reverse osmosis process, it comprises water under pressure by selectively permeable membrane, the latter can intercept and capture the material of most dissolved or suspension.Purity rubric is generally by described process gained water: the resistance under 25 ℃ is at least about 15M Ω-cm (be generally 18M Ω-cm, 25 ℃ under), the not enough about 25PPb of electrolyte content, the about 150g/cm of suspension content deficiency
3And not enough about 0.2 micron of particle size, the not enough about 10g/cm of content of microorganisms
3, the not enough about 100ppb of organic carbon content.
In the inventive method and system, carry out precision monitor and metering by known equipment and instrument, production concentration and corresponding flow rate obtain strict control.For this reason, the suitable mode of selecting is that vapour pressure is measured.Other method is self-evident to the art technology expert.
Above institute is described and is intended to illustration.For the art technology expert, obviously, at all kinds of corrections that aforementioned many system parameters are done, flexible and change does not exceed the spirit and scope of the invention.
Claims (22)
- The preparation system of 1 ultra-pure ammonia, this system comprises:(a) leave the ammonia liquor storage vessel of the vapour space on the liquid level;(b) contain the device of ammonia gas vapor from described vapour space extraction;(c) from the filtering membrane of institute's extraction steam except＞0.005 micron particle; And(d) liquid-vapor osculating element is used so that contacted and therefore made the purifying ammonia with the de-ionate solution of ammonia by steam after the filter of described filtering membrane.
- The system of 2 claims 1, wherein, described liquid-vapor osculating element is a scrubber tower.
- The system of 3 claims 2, this system and then comprise rectifying tower, the steam of discharging from described scrubber tower in order to rectifying.
- 4 are suitable for the system that high-accuracy electronic component is made, and this system comprises:(a) comprise the production line of many workstations, wherein, described workstation is put successively, in order to handling the workpiece of forming described electronic component, and selects one of this class workstation to use ammonia in described workpiece;(b) carry the device of described workpiece continuously along described production line to described workstation;(c) with the above workstation of described production line in abutting connection with and with the subelement of ultrapure attitude supply ammonia, this subelement comprises:(i) leave the ammonia liquor storage vessel of the vapour space on the liquid level;The device that (ii) contains ammonia gas vapor from described vapour space extraction;(iii) from the filtering membrane of institute's extraction steam except＞0.005 micron particle; And(iv) the liquid-vapor osculating element is used so that contacted and therefore made the purifying ammonia with the de-ionate solution of ammonia by steam after the filter of described filtering membrane;And the device of (d) product of step (c) directly being used workpiece at described workstation; And described workstation, described e Foerderanlage and described subelement environment of living in all keep pollution-free state according to the semi-conductor manufacturer's standard.
- The system of 5 claims 4, wherein, described liquid-vapor osculating element is a scrubber tower.
- The system of 6 claims 5, wherein, described subsystem and then comprise rectifying tower, the steam of discharging from described scrubber tower in order to rectifying.
- The system of 7 claims 5, wherein, described subsystem and then comprise with so that described purifying ammonia and purifying water mix the device of generation ammonia soln.
- The system of 8 claims 5 wherein, is being positioned at apart from the product of step (c) is drawn at the about 30cm of the device place that described workstation is used described workpiece through the ammonia of described subsystem purifying.
- The system of 9 claims 5, wherein, the size of described subsystem can generate described purifying ammonia with about 200cc/h～2L/h speed completely.
- The system of 10 claims 5, wherein, the subitem of described subsystem (ii), (ii) reaches (iv) and carries out in continuous or semicontinuous mode.
- 11 are suitable for workstation supply high-purity ammon compositions and methods on the high-accuracy electronic component manufacturing line, and this method comprises:(a) liquefied ammonia top vapour space extraction ammonia in the ammonia storage vessel;(b) make described ammonia by filtering membrane and from wherein except＞0.005 micron particle;(c) make filter back ammonia by the liquid-vapor osculating element, thereby described ammonia is contacted with the de-ionate solution of ammonia; And(d) recovery is delivered to described workstation from the described ammonia of described liquid-vapor osculating element discharge and with described ammonia.
- The method of 12 claims 11, wherein, described liquid-vapor osculating element is a scrubber tower.
- The method of 13 claims 11, this method and then comprise make before the described ammonia that described liquid-vapor osculating element is discharged is being delivered to described workstation and are dissolved in the purified water earlier.
- The method of 14 claims 11, this method and then comprise make the described ammonia of discharging from described liquid-vapor osculating element by rectifying tower, so that be delivered to the described workstation purifying that takes a step forward at described ammonia.
- The method of 15 claims 11, this method and then comprise that (c ') makes the described ammonia of discharging from described liquid-vapor osculating element be further purified by rectifying tower, and make before the described ammonia of rectifying tower discharge is being delivered to described workstation and be dissolved in the purified water earlier.
- The method of 16 claims 11, wherein, step (c) is carried out between 10～50 ℃ in temperature.
- The method of 17 claims 11, wherein, step (c) is carried out between 15～35 ℃ in temperature.
- The method of 18 claims 15, wherein, step (c) and (c ') carry out between 15～35 ℃ in temperature.
- The method of 19 claims 11, wherein, step (c) temperature between between 15～35 ℃ and pressure near normal atmosphere～be approximately higher than between normal atmosphere 30psi and carry out.
- The method of 20 claims 15, wherein, step (c) and (c ') temperature between between 15～35 ℃ and pressure near normal atmosphere～be approximately higher than between normal atmosphere 30psi and carry out.
- The method of 21 claims 11, wherein, described liquid-vapor osculating element is positioned at apart from the about 30cm of described workstation place.
- The method of 22 claims 15, wherein,, described rectifying tower is positioned at apart from the about 30cm of described workstation place.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN95197886A CN1080703C (en) | 1995-06-05 | 1995-06-05 | Point-of-use ammonia purification for electronic component manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN95197886A CN1080703C (en) | 1995-06-05 | 1995-06-05 | Point-of-use ammonia purification for electronic component manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1186479A true CN1186479A (en) | 1998-07-01 |
| CN1080703C CN1080703C (en) | 2002-03-13 |
Family
ID=5083417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN95197886A Expired - Fee Related CN1080703C (en) | 1995-06-05 | 1995-06-05 | Point-of-use ammonia purification for electronic component manufacture |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1080703C (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3383173A (en) * | 1965-12-30 | 1968-05-14 | Chevron Res | Ammonia purification |
| DD268230A1 (en) * | 1987-12-28 | 1989-05-24 | Dresden Komplette Chemieanlag | PROCESS FOR CLEANING AMMONIA STEAM |
| US5242468A (en) * | 1991-03-19 | 1993-09-07 | Startec Ventures, Inc. | Manufacture of high precision electronic components with ultra-high purity liquids |
-
1995
- 1995-06-05 CN CN95197886A patent/CN1080703C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1080703C (en) | 2002-03-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5755934A (en) | Point-of-use ammonia purification for electronic component manufacture | |
| CN1086319C (en) | On-site ammonia purification for semiconductor manufacture | |
| US5722442A (en) | On-site generation of ultra-high-purity buffered-HF for semiconductor processing | |
| US6063356A (en) | On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing | |
| EP0497247A1 (en) | Method of cleaning semiconductor wafers using mixer and its arrangement | |
| US6001223A (en) | On-site ammonia purification for semiconductor manufacture | |
| US6350425B2 (en) | On-site generation of ultra-high-purity buffered-HF and ammonium fluoride | |
| US5846386A (en) | On-site ammonia purification for semiconductor manufacture | |
| CN1089616C (en) | On-site generation of ultra-high-purity buffered HF for semiconductor processing | |
| EP0830316A1 (en) | Point-of-use ammonia purification for electronic component manufacture | |
| WO1996039266A1 (en) | On-site generation of ultra-high-purity buffered-hf for semiconductor processing | |
| CN1080703C (en) | Point-of-use ammonia purification for electronic component manufacture | |
| CN102134708A (en) | Filter for filtering fluid in a substrate treatment chamber | |
| US6372022B1 (en) | Ionic purifier | |
| WO1996041687A1 (en) | On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing | |
| CN216785740U (en) | Production device of G5-grade ultra-pure ammonia water for semiconductor industry | |
| US6214173B1 (en) | On-site manufacture of ultra-high-purity nitric acid | |
| CN1204408A (en) | System and method for on-site mixing of ultra-high-purity chemicals for semiconductor processing | |
| CN221027723U (en) | Apparatus for producing of electronic grade aqueous ammonia is directly produced to ammonia | |
| KR19990022224A (en) | On-site mixing systems and methods for ultra-pure chemicals for semiconductor processes | |
| CN117509668A (en) | Production device and production method for directly producing electronic grade ammonia water by ammonia gas | |
| CN117085367A (en) | Ion impurity removal method and device for high-purity fluorinated solution | |
| KR19990022280A (en) | Method for producing ultra-high purity hydrofluoric acid for semiconductor processing in situ | |
| DE69611911T2 (en) | ON-SITE AMMONIAK CLEANING FOR SEMICONDUCTOR PRODUCTION | |
| EP0833705A1 (en) | On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1017878 Country of ref document: HK |