CN118647249A - Thermoelectric power generation chip, working method thereof and three-dimensional integrated circuit - Google Patents
Thermoelectric power generation chip, working method thereof and three-dimensional integrated circuit Download PDFInfo
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- 238000010248 power generation Methods 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000002070 nanowire Substances 0.000 claims description 44
- 230000017525 heat dissipation Effects 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 22
- 239000004020 conductor Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- 239000012212 insulator Substances 0.000 claims description 12
- 239000002073 nanorod Substances 0.000 claims description 12
- MFIWAIVSOUGHLI-UHFFFAOYSA-N selenium;tin Chemical compound [Sn]=[Se] MFIWAIVSOUGHLI-UHFFFAOYSA-N 0.000 claims description 12
- 239000002019 doping agent Substances 0.000 claims description 11
- 239000003989 dielectric material Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 17
- 239000010408 film Substances 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 230000005678 Seebeck effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The invention provides a thermoelectric power generation chip, a working method thereof and a three-dimensional integrated circuit, wherein the thermoelectric power generation chip comprises a first grain layer and a second grain layer, an electrically insulating medium layer is formed between the first grain layer and the second grain layer, a magnetic Seebeck thermoelectric structure body is arranged in the first grain layer, and a non-magnetic Seebeck thermoelectric structure body is arranged in the second grain layer; a chip element layer is arranged on one side of the first grain layer, which is far away from the medium layer, and a temperature control valve, a temperature control circuit and a charging module are arranged on the chip element layer; when the temperature control valve is in a first switch state, the temperature control valve enables the charging module to be connected to the magnetic Seebeck thermoelectric structure body; when the temperature control valve is in the second switch state, the temperature control valve connects the charging module to the non-magnetic seebeck thermoelectric structure. The invention also provides a three-dimensional integrated circuit with the thermoelectric generation chip. The thermoelectric power generation chip has high thermoelectric conversion efficiency.
Description
Technical Field
The invention relates to the technical field of three-dimensional stacked chips, in particular to a thermoelectric generation chip, a working method of the thermoelectric generation chip and a three-dimensional integrated circuit with the thermoelectric generation chip.
Background
With the development of integrated circuit technology, three-dimensional integrated circuits are widely used in mass memories and high-speed signal processors because of their advantages of high density, high speed, multiple functions, low power consumption, and the like. Three-dimensional integrated circuits, also known as stereoscopic integrated circuits, are formed by stacking multiple layers of semiconductor dies or chips, wherein the stacked layers are isolated by insulating layers, and the stacked layers can be communicated with one another in a perforation manner.
With the development of three-dimensional integrated circuit technology, the number of chips, dies, or other devices that need to be stacked in the vertical direction of the substrate is also increasing, so as to achieve higher integration and better performance. Although the increase of the number of stacked layers can significantly improve the performance of the three-dimensional integrated circuit, with the increase of the number of stacked layers, the heat generated by the internal devices of the three-dimensional integrated circuit is also increased, and the problem of heat dissipation has become an important research topic of the three-dimensional integrated circuit. The thermoelectric generation chip for generating electricity by utilizing the temperature difference is arranged in the three-dimensional integrated circuit, so that heat generated during the operation of the functional chip of the three-dimensional integrated circuit can be fully utilized, the thermoelectric conversion technology is utilized to directly convert the heat energy into electric energy, on one hand, the problem of heat accumulation inside the three-dimensional integrated circuit can be reduced, and on the other hand, the electric energy generated by the thermoelectric generation chip can also supply power to the functional chip in the three-dimensional integrated circuit, so that the dependence of the three-dimensional integrated circuit on an external power supply is reduced.
Currently, thermoelectric conversion technology is mostly implemented using spin magnetic seebeck technology, and U.S. patent publication No. US11411046B2 discloses an integrated thermoelectric power generation device with a spin seebeck insulator and spin orbit coupling material. However, the existing thermoelectric power generation chip for realizing power generation by using the thermoelectric conversion technology is often realized by using the magnetic seebeck thermoelectric technology, and the thermoelectric conversion efficiency under different temperature gradients is not considered, so that the thermoelectric conversion efficiency of the existing thermoelectric power generation chip is low, and therefore, the heat in the three-dimensional integrated circuit cannot be quickly converted into electric energy by the thermoelectric power generation chip, the heat dissipation efficiency in the three-dimensional integrated circuit is low, and the work of the three-dimensional integrated circuit is also influenced.
Disclosure of Invention
A first object of the present invention is to provide a thermoelectric power generation chip having high thermoelectric conversion efficiency.
The second object of the present invention is to provide a working method of the thermoelectric power generation chip.
A third object of the present invention is to provide a three-dimensional integrated circuit integrated with the thermoelectric generation chip described above.
To achieve the first object of the present invention, the thermoelectric generation chip provided by the present invention is integrated in a three-dimensional integrated circuit, the thermoelectric generation chip comprising: the semiconductor device comprises a first grain layer and a second grain layer, wherein an electrically insulating medium layer is formed between the first grain layer and the second grain layer, a magnetic Seebeck thermoelectric structure body is arranged in the first grain layer, and a non-magnetic Seebeck thermoelectric structure body is arranged in the second grain layer; a chip element layer is arranged on one side of the first grain layer, which is far away from the medium layer, a temperature control valve, a temperature control circuit and a charging module are arranged on the chip element layer, the temperature control valve is electrically connected with the temperature control circuit, the temperature control circuit is electrically connected with the charging module, and the temperature control valve can be selectively in a first switch state or a second switch state; when the temperature control valve is in a first switch state, the temperature control valve enables the charging module to be connected to the magnetic Seebeck thermoelectric structure body; when the temperature control valve is in the second switch state, the temperature control valve connects the charging module to the non-magnetic seebeck thermoelectric structure.
According to the scheme, the magnetic seebeck thermoelectric structure and the non-magnetic seebeck thermoelectric structure are arranged in the thermoelectric power generation chip, and the temperature control valve can selectively realize the communication between the charging module and the magnetic seebeck thermoelectric structure or the non-magnetic seebeck thermoelectric structure. Therefore, the magnetic Seebeck thermoelectric structure or the non-magnetic Seebeck thermoelectric structure can be selectively utilized to generate power and charge according to the condition of temperature gradient, so that the thermoelectric conversion efficiency of the thermoelectric power generation chip is improved, heat in the three-dimensional integrated circuit can be quickly converted into electric energy, heat accumulation in the three-dimensional integrated circuit is avoided, and the heat dissipation efficiency is improved.
One preferable scheme is that one side of the thermoelectric generation chip is provided with a heat dissipation structure; the temperature control valve can be selectively in a third switch state, and when the temperature control valve is in the third switch state, the temperature control valve enables the thermoelectric generation chip to be connected to the heat dissipation structure.
Therefore, once the temperature in the three-dimensional integrated circuit is too high, particularly the temperature of the thermoelectric generation chip is too high, the thermoelectric generation chip can be directly connected to the heat dissipation structure to dissipate heat, and the phenomenon that the work of the three-dimensional integrated circuit is influenced due to the fact that the temperature in the three-dimensional integrated circuit is too high is avoided.
The magnetic Seebeck thermoelectric structure body is characterized by comprising a conductive material layer, a Seebeck insulator is wrapped outside the conductive material layer, a non-magnetic metal layer is wrapped outside the Seebeck insulator, and a dielectric material layer is wrapped outside the non-magnetic metal layer.
Spin-seebeck insulators also provide electrical isolation of active or passive device interconnects, which can promote the stability of three-dimensional integrated circuit operation, since spin-seebeck insulators are also good electrical insulators, which have the advantage of few conduction electrons.
The non-magnetic Seebeck thermoelectric structure body is characterized by comprising two metal film layers, wherein a first type of nanowire and a second type of nanowire which are arranged at intervals are arranged between the two metal film layers, and the adjacent first type of nanowire and second type of nanowire are connected through a connecting terminal.
Still further, one of the first type of nanowire and the second type of nanowire is made of a thermoelectric material doped with an N-type dopant, and the other of the first type of nanowire and the second type of nanowire is made of a thermoelectric material doped with a P-type dopant.
It can be seen that by providing the nonmagnetic seebeck thermoelectric structure described above, thermoelectric conversion can be achieved by utilizing PN fixation, the structure is not complicated, and the nonmagnetic seebeck thermoelectric structure can be realized at low cost.
Still further, the first type of nanowires is at a portion above 10 nanometers from the bottom, more than 80% based on the concentration of tin selenide nanorods; and/or the second type of nanowire is above 80% based on the concentration of tin selenide nanorods in a portion above 10 nanometers from the bottom.
Thus, by setting the concentration of the tin selenide nanorod, the thermoelectric conversion performance of the nonmagnetic seebeck thermoelectric structure can be ensured.
Further, an on-chip through hole extending along the stacking direction from the first crystal grain layer to the second crystal grain layer is further arranged in the thermoelectric generation chip, and conductive materials are filled in the on-chip through hole.
It can be seen that by providing the on-chip via hole such that the on-chip via hole has conductivity, current can flow through the on-chip via hole and the magnetic seebeck effect occurs, and the seebeck effect and the spin seebeck effect are simultaneously subjected to thermoelectric conversion.
In order to achieve the second object, the working method of the thermoelectric power generation chip provided by the invention is applied to the thermoelectric power generation chip, and the method comprises the following steps: acquiring the actual temperature gradient of the thermoelectric power generation chip, wherein if the actual temperature gradient is smaller than a preset temperature gradient threshold value, the temperature control valve is in a first switch state, and the temperature control valve enables the charging module to be connected to the magnetic Seebeck thermoelectric structure body; if the actual temperature gradient is greater than or equal to the preset temperature gradient threshold, the temperature control valve is in a second switch state, and the temperature control valve enables the charging module to be connected to the nonmagnetic Seebeck thermoelectric structure body.
According to the scheme, the thermoelectric power generation chip can determine the on-off state of the temperature control valve according to the actual temperature gradient of the thermoelectric power generation chip and the actual temperature gradient, so that the magnetic Seebeck thermoelectric structure or the nonmagnetic Seebeck thermoelectric structure can be selected to be used for power generation. Therefore, the nonmagnetic Seebeck thermoelectric structure body is used for generating power when the temperature gradient is large, and the magnetic Seebeck thermoelectric structure body is used for generating power when the temperature gradient is small, so that the thermoelectric conversion efficiency of the thermoelectric power generation chip is improved, and the heat dissipation efficiency of the three-dimensional integrated circuit is also improved.
One preferable scheme is that one side of the thermoelectric generation chip is provided with a heat dissipation structure; the method further comprises the steps of: and acquiring the actual temperature of the thermoelectric power generation chip, and if the actual temperature is higher than a preset temperature threshold value, enabling the temperature control valve to be in a third switching state, wherein the temperature control valve enables the thermoelectric power generation chip to be connected to the heat dissipation structure.
Therefore, if the actual temperature of the thermoelectric power generation chip is too high, the heat in the thermoelectric power generation chip can be quickly conducted to the heat dissipation structure through the connection of the temperature control valve to the heat dissipation structure, and the phenomenon that the operation of the thermoelectric power generation chip is influenced due to the fact that the temperature of the thermoelectric power generation chip is too high is avoided.
To achieve the third object, the present invention provides a three-dimensional integrated circuit comprising: a substrate, a stacking structure is formed above the substrate, and the stacking structure comprises more than two layers of functional chips; at least one thermoelectric generation chip is arranged in the stacking structure, heat generated by the operation of the functional chip is conducted to the thermoelectric generation chip through the through holes extending along the stacking direction, the thermoelectric generation chip forms current by utilizing the temperature difference between the hot end point and the cold end point, and the thermoelectric generation chip outputs current to the functional chip and/or outputs current to the outside of the three-dimensional integrated circuit.
Drawings
FIG. 1 is a schematic diagram of a three-dimensional integrated circuit embodiment of the present invention.
Fig. 2 is a schematic block diagram of an embodiment of a thermoelectric generation chip.
Fig. 3 is a schematic structural diagram of an embodiment of a thermoelectric generation chip of the present invention.
Fig. 4 is a schematic structural diagram of a magnetic seebeck thermoelectric structure in an embodiment of the thermoelectric chip of the present invention.
Fig. 5 is a schematic structural diagram of a non-magnetic seebeck thermoelectric structure in an embodiment of the thermoelectric generation chip of the present invention.
The invention is further described below with reference to the drawings and examples.
Detailed Description
The three-dimensional integrated circuit is an integrated circuit with a stacking structure, wherein a plurality of layers of stacking layers are arranged in the stacking structure, and each layer of stacking layers can be provided with a functional chip. And still be provided with the thermoelectric generation chip in the stacked structure, the produced heat of function chip can be through the conduction of through-hole to the thermoelectric generation chip, and the thermoelectric generation chip utilizes the temperature difference between hot end point and the cold junction point to produce the electric current and supply power to the function chip to realize the quick conduction of heat.
The thermoelectric power generation chip is provided with the magnetic Seebeck thermoelectric structure body and the non-magnetic Seebeck thermoelectric structure body, and is used for generating power according to the current actual temperature gradient condition, so that the thermoelectric conversion efficiency is improved, the thermoelectric power generation chip can be used for rapidly converting heat energy into electric energy, heat accumulation in a three-dimensional integrated circuit is avoided, and the heat dissipation efficiency of the three-dimensional integrated circuit is improved.
Three-dimensional integrated circuit embodiment:
Referring to fig. 1, the three-dimensional integrated circuit of the present embodiment has a substrate 111, the substrate 111 is located at the lower end of the three-dimensional integrated circuit, and a heat dissipation structure 110 is formed at the upper end of the three-dimensional integrated circuit, where in the present embodiment, the heat dissipation structure 110 may be a heat conductive metal, such as a copper plate. A stacked structure is disposed between the substrate 111 and the heat dissipation structure 110, and the stacked structure has a plurality of stacked layers, and an insulating medium needs to be disposed between two adjacent stacked layers. Each stacked layer may be provided with a functional chip. Four functional chips 121, 122, 123, 124 are sequentially arranged from the direction close to the heat dissipation structure 110 to the direction close to the substrate 111, and the functional chips 121, 122, 123, 124 are sequentially distributed in four stacked layers from top to bottom. In this embodiment, the areas of the four functional chips 121, 122, 123, 124 disposed from top to bottom are gradually reduced, so that the present embodiment is an inverted pyramid type distribution mode.
An interposer 112 is further disposed in the stacked structure, and the interposer 112 is located between the substrate 111 and the heat dissipation structure 110, and the interposer 112 may be made of a silicon-based material or a glass-based material. The interposer 112 is located inside the stacked structure, wherein a part of the stacked layer is located between the interposer 112 and the substrate 111, and another part of the stacked layer is located between the interposer 112 and the heat dissipation structure 110.
In the present embodiment, thermoelectric generation chips are also provided in the stacked structure, and the thermoelectric generation chips are provided in one or more stacked layers, for example, thermoelectric generation chips 151, 154 are provided in the stacked layer provided with the functional chip 122, thermoelectric generation chips 152, 155 are provided in the stacked layer provided with the functional chip 123, and thermoelectric generation chips 153, 156 are provided in the stacked layer provided with the functional chip 124. It should be noted that, the arrangement of the thermoelectric generation chips in each stacked layer may be reasonably arranged according to the line condition of each stacked layer, and fig. 1 only schematically shows each functional chip and the thermoelectric generation chip. In addition, in order to ensure the electrical insulation between the functional chip and the thermoelectric power generation chip, an electrical insulation medium should be filled between the functional chip and the thermoelectric power generation chip on the same stacked layer, so as to avoid the influence of the current on the functional chip on the work of the thermoelectric power generation chip caused by the direct flow of the current on the functional chip through the thermoelectric power generation chip.
A peripheral through hole structure is disposed outside the functional chip, the peripheral through hole structure on each layer of stacked layers is located between the functional chip and the thermoelectric generation chip, for example, a peripheral through hole structure 161 is formed between the functional chip 123 and the thermoelectric generation chip 152, a peripheral through hole structure 163 is formed between the functional chip 123 and the thermoelectric generation chip 155, a peripheral through hole structure 162 is formed between the functional chip 124 and the thermoelectric generation chip 153, and a peripheral through hole structure 164 is formed between the functional chip 124 and the thermoelectric generation chip 156. And, each peripheral through hole structure is filled with an electric insulating medium, and the electric insulating medium is arranged to prevent the current generated by the functional chips in the same stacked layer from being directly conducted to the thermoelectric generation chip to influence the work of the thermoelectric generation chip.
One or more through holes 140 are provided in the stacked structure, and these through holes 140 may penetrate through a certain layer or layers of the stacked layer, and each through hole 140 extends in the stacking direction, for example, the through hole 140 may penetrate through a functional chip or a peripheral through hole structure. In this embodiment, the plurality of through holes 140 includes a heat conducting through hole and an electric conducting through hole according to the function of the through holes 140, wherein the heat conducting through hole is used for conducting heat, and the electric conducting through hole is used for conducting current, so as to provide a medium for the flow of the current. Specifically, the conductive via is filled with a graphene composite material or a conductive metal material, such as copper, and the conductive via is filled with a conductive metal material, such as copper. Accordingly, the heat conductive via and the electric conductive via are not strictly distinguished, and the plurality of vias 140 as shown in fig. 1 may be used as both the heat conductive via and the electric conductive via.
In addition, each of the through holes 140 is provided at both upper and lower ends thereof with a heat conductive member 130, the heat conductive member 130 is a bump formed of a heat conductive material, such as a metal ball, and heat in the through holes 140 can be conducted to the outside of the through holes 140 through the heat conductive member 130. For example, the heat conducting member 130 is disposed between the through hole 140 and the heat dissipating structure 110, and the heat conducting member 130 is also disposed between the through hole 140 and the substrate 111.
Referring to fig. 2, a thermal end point 171 and a cold end point 172 are provided in a thermoelectric power generation chip, a power generation structure 173 is formed between the thermal end point 171 and the cold end point 172, the power generation structure 173 is a seebeck thermoelectric structure generating current using the seebeck effect, and includes a magnetic seebeck thermoelectric structure and a non-magnetic seebeck thermoelectric structure, and the power generation structure 173 generates current using a temperature difference between the thermal end point 171 and the cold end point 172. The thermal terminals 171 are connected to the hot spots 174 of the stacked structure, wherein the hot spots 174 are locations with higher temperature in the three-dimensional integrated circuit, for example, locations near the power supply or the functional chip with larger heating value of the three-dimensional integrated circuit, and may be the ends of the heat conducting through holes. The cold end 172 of the thermoelectric generation chip is connected to the cold end 175 of the stacked structure, for example, where the temperature within the three-dimensional integrated circuit is low, and may be a location remote from the three-dimensional integrated circuit power supply.
Thermoelectric generation chip embodiment:
The structure of the thermoelectric generation chip shown in fig. 1 will be described in detail with reference to fig. 3. The thermoelectric power generation chip has a first die layer 211 and a second die layer 212, and an electrically insulating dielectric layer 213 is formed between the first die layer 211 and the second die layer 212. As can be seen from fig. 3, in the case where the first die layer 211, the dielectric layer 213, and the second die layer 212 are located between the substrate 111 and the heat dissipation structure 110 and are arranged along the lamination direction, specifically, the first die layer 211 is located on the side close to the heat dissipation structure 110, the second die layer 212 is located on the side close to the substrate 111, and the dielectric layer 213 is sandwiched between the first die layer 211 and the second die layer 212. The first die layer 211 is disposed on a side away from the dielectric layer 213, and therefore, the chip element layer 201 is closer to the heat dissipation structure 110.
A magnetic seebeck thermoelectric structure 231 is provided in the first crystal grain layer 211, and a nonmagnetic seebeck thermoelectric structure 232 is provided in the second crystal grain layer 212. Referring to fig. 4, the magnetic seebeck thermoelectric structure 231 includes a spin-seebeck thermoelectric material structure having a spin-seebeck insulator and a spin-orbit coupling (SOC) material, which generates a spin voltage using a spin-seebeck effect (SSE). Specifically, the magnetic seebeck thermoelectric structure 231 is arranged in a strip shape, and the conductive material layer 311 is disposed in the magnetic seebeck thermoelectric structure 231 when viewed in cross section, and the conductive material layer 311 is located in the innermost layer of the magnetic seebeck thermoelectric structure 231. The conductive material layer 311 has an electrical conductivity property and a thermal conductivity property, wherein the electrical conductivity property of the conductive material layer 311 can cause the conductive material layer 311 to form a current joule heat, and a thermal gradient is mainly that a place where a potential is high is diffused to a place where the potential is low, and if the middle of the conductive material layer 311 is also connected to a place where a high-density wiring is formed, the thermal gradient also exists in a case where the middle is diffused to both sides. The thermal gradient of the heat conduction property is mainly vertically distributed along the conductive material layer 311, and thus the conductive material layer 311 is actually made of a metal material having high heat conduction and high electric conduction properties. The magnetic field direction of the conductive material layer 311 is shown by the arrow direction in fig. 4, and of course, the magnetic field direction may be determined according to the connection method of the spin magnetic seebeck thermoelectric structure 231, and the magnetic field direction may be upward or downward.
The conductive material layer 311 is wrapped with a seebeck insulator 312, and preferably the seebeck insulator 312 is a spin seebeck insulator. A non-magnetic metal layer 313 is wrapped around the seebeck insulator 312, and a dielectric material layer 314 is wrapped around the non-magnetic metal layer 313. In this embodiment, the nonmagnetic metal layer 313 further has two connection terminals 315 and 316, the magnetic seebeck thermoelectric structure 231 is connected to an external circuit through the two connection terminals 315 and 316, respectively, and thus a loop is formed, and a current formed by the magnetic seebeck thermoelectric structure 231 can be outputted through the two connection terminals 315 and 316.
Referring to fig. 5, the non-magnetic seebeck thermoelectric structure 232 has two resin material layers 331, 332, wherein the resin material layer 331 is located at the uppermost end of the entire non-magnetic seebeck thermoelectric structure 232, and the resin material layer 332 is located at the lowermost end of the entire non-magnetic seebeck thermoelectric structure 232. The nonmagnetic seebeck thermoelectric structure 232 is further provided with two metal film layers 333, 334, wherein the metal film layer 333 is closely attached to the lower side of the resin material layer 331, and the metal film layer 334 is closely attached to the upper side of the resin material layer 332.
Between the metal thin film layer 333 and the metal thin film layer 334, a first type nanowire 341 and a second type nanowire 342 are disposed, wherein the number of the first type nanowire 341 and the second type nanowire 342 is multiple, and the number of the first type nanowire 341 and the second type nanowire 342 are arranged at intervals, and adjacent first type nanowires 341 and second type nanowires 342 are connected through a connection terminal 335. As can be seen from fig. 5, the connection terminals 335 are arranged below the metal film layer 333 and above the metal film layer 334. The extending direction of the first type nano-wires 341 and the second type nano-wires 342 is from the direction close to the metal film layer 333 to the direction close to the metal film layer 334, that is, the extending direction of the first type nano-wires 341 and the second type nano-wires 342 is perpendicular to the extending direction of the metal film layer 333.
The first type of nanowire 341 is made using a thermoelectric material doped with an N-type dopant, and the second type of nanowire 342 is made using a thermoelectric material doped with a P-type dopant. The thermoelectric material doped with N-type dopant can be a material made by doping tin selenide nano rods, and the core dopant is phosphorus, arsenic or antimony. The thermoelectric material doped with the P-type dopant has no special requirement on the doped material, and is doped based on tin selenide nano rods. And, the portion of the first type nanowire 341 more than 10 nanometers from the bottom based on the concentration of the tin selenide nanorods exceeds 80%, that is, the portion of the first type nanowire 341 more than 10 nanometers from the connection terminals 335 at both ends needs to be more than 80% based on the concentration of the tin selenide nanorods. Accordingly, the portion of the second type of nanowire 342 that is more than 10 nanometers from the bottom is more than 80% based on the concentration of the tin selenide nanorods, that is, the portion of the second type of nanowire 342 that is more than 10 nanometers from the connection terminals 335 at both ends is more than 80% based on the concentration of the tin selenide nanorods. In this way, it is possible to ensure that the concentration of the N-type dopant in the first-type nanowire 341 is high and that the concentration of the P-type dopant in the second-type nanowire 342 is high, thereby ensuring the thermoelectric conversion efficiency of the nonmagnetic seebeck thermoelectric structure 232.
Referring back to fig. 3, a temperature control valve, a temperature control circuit 222, and a charging module 223 are provided on the chip element layer 201. Further, a plurality of on-chip through holes 241, 242, 245 are provided in the thermoelectric power generation chip, and each of the on-chip through holes 241, 242, 245 penetrates one or more layers of the first die layer 211, the dielectric layer 213, and the second die layer 212. Each of the in-chip through holes 241, 242, 245 is filled with an electrically conductive material, for example, copper, and copper also has a heat conductive property, so that the in-chip through holes 241, 242, 245 also have a heat conductive property. Each of the on-chip through holes 241, 242, 245 extends along the stacking direction of the thermoelectric generation chips, that is, along the direction from the heat dissipation structure 110 to the base material 111.
As can be seen from fig. 3, the upper end of the in-chip through hole 241 is connected to the temperature control valve through a metal wire and to the heat dissipation structure 110 through the temperature control valve, and a heat conduction member 251 is connected between the temperature control valve and the heat dissipation structure 110. The lower end of the on-chip via 241 is connected to the substrate 111 through a metal wire, and a heat conductive member 253 is also connected between the metal wire and the substrate 111. Both ends of the in-chip through-hole 242 are connected to the nonmagnetic seebeck thermoelectric structure 232 and the charging module 223, respectively, and an upper end of the in-chip through-hole 245 is connected to the heat dissipation structure 110 through the heat conductive member 252, and a lower end of the in-chip through-hole 245 is connected to the base material 111 through the heat conductive member 255.
The temperature control valve is a component switch with a thermally conductive metal valve having a temperature sensing device, such as a temperature sensing device or circuit, inside the temperature control valve. The temperature control valve may include the temperature-sensitive switches 224, 225 of fig. 3, as well as a temperature-sensitive switch connected between the nonmagnetic seebeck thermoelectric structure 232 and the on-chip via 242. It should be noted that, each temperature-sensing switch in fig. 3 is only schematically shown for convenience of description. And each temperature sensing switch can be respectively closed or opened. The temperature control valve is connected to a temperature control circuit 222, and the temperature control circuit 222 is also connected to a charging module 223 through a metal wire, preferably, the charging module 223 has a DC-DC converter circuit module and a discharging module.
The temperature control valve has various switch states, and in the embodiment, the temperature control valve can selectively work in three different states according to the actual temperature and the actual temperature gradient condition of the thermoelectric power generation chip. For example, when the temperature control valve is in the first switch state, the temperature control valve can cause the temperature control circuit 222 to be connected to the magnetic seebeck thermoelectric structure 231, such as the temperature sensing switch 225 being in the closed state, but the temperature sensing switch 224 being in the open state, at which time the temperature control circuit 222 is connected to the conductive piece 262 located above the magnetic seebeck thermoelectric structure 231 through the temperature sensing switch 225, and thereby achieve electrical connection with the magnetic seebeck thermoelectric structure 231, at which time the magnetic seebeck thermoelectric structure 231 charges the charging module 223. The other end of the magnetic seebeck thermoelectric structure 231 is connected to the base material 111 through a wire and a heat conductive member 254. When the temperature control valve is in the second switch state, the temperature control valve can enable the temperature control circuit 222 to be connected to the nonmagnetic seebeck thermoelectric structure 232, specifically, the temperature sensing switch connecting the nonmagnetic seebeck thermoelectric structure 232 with the on-chip through hole 242 is closed, so that the nonmagnetic seebeck thermoelectric structure 232 can be connected to the charging module 223 and the temperature control circuit 222 through the on-chip through hole 242. When the temperature control valve is in the third switch state, the temperature control valve can enable the temperature control circuit 222 to be connected to the heat dissipation structure 110, for example, only the temperature sensing switch 224 is closed, and at this time, the thermoelectric generation chip is connected to the heat dissipation structure 110 through a metal wire.
In addition, temperature control switch 224 is also connected to external hot terminal 171 by metal wire, while on-chip via 245 is connected to cold terminal 172, and conductive element 262 is also connected to external input power 261 by metal wire.
Working method embodiment of thermoelectric generation chip:
the temperature difference power generation chip can control the on-off state of the temperature control valve according to the actual temperature and the actual temperature gradient condition of the temperature difference power generation chip. For example, it is first necessary to obtain the actual temperature of the thermoelectric generation chip and determine whether the actual temperature of the thermoelectric generation chip is higher than a preset temperature threshold. If the actual temperature of the thermoelectric power generation chip is higher than the preset temperature threshold, the temperature control valve is in a third switch state, namely the temperature sensing switch 224 shown in fig. 3 is in a closed state, and the temperature sensing switch 225 is in an open state, so that the thermoelectric power generation chip can conduct heat to the heat dissipation structure 110 through the metal wire, the heat of the thermoelectric power generation chip can be rapidly dissipated, and the phenomenon that the work of the three-dimensional integrated circuit is influenced due to the fact that the temperature in the thermoelectric power generation chip is too high is avoided.
If the actual temperature of the thermoelectric generation chip does not exceed the preset temperature threshold, the actual temperature gradient of the thermoelectric generation chip needs to be further obtained, if the actual temperature gradient is smaller than the preset temperature gradient threshold, the temperature control valve is set in the first switch state, that is, the temperature sensing switch 225 is set in the closed state, but the temperature sensing switch 224 is set in the open state, and at this time, the charging module 223 can be connected to the magnetic seebeck thermoelectric structure 231. At this time, the current generated by the temperature difference in the magnetic seebeck thermoelectric structure 231 flows to the charging module 223 through the temperature control switch 222, and charging by the magnetic seebeck thermoelectric structure 231 is realized.
If the actual temperature gradient of the thermoelectric generation chip is greater than or equal to the preset temperature gradient threshold, the temperature control valve is in the second switch state, that is, the temperature sensing switches 224 and 225 are in the open state, so that the temperature sensing switch connected between the nonmagnetic seebeck thermoelectric structure 232 and the on-chip through hole 242 is in the closed state, and thus the nonmagnetic seebeck thermoelectric structure 232 can charge the charging module 223.
It can be seen that the present invention simultaneously provides the magnetic seebeck thermoelectric structure 231 and the non-magnetic seebeck thermoelectric structure 232 within the thermoelectric power generation chip, and determines to use the magnetic seebeck thermoelectric structure 231 or the non-magnetic seebeck thermoelectric structure 232 for power generation by acquiring the actual temperature gradient condition. Because the magnetic seebeck thermoelectric structure 231 has higher thermoelectric conversion efficiency when the temperature gradient is lower, and the non-magnetic seebeck thermoelectric structure 232 has higher thermoelectric conversion efficiency when the temperature gradient is higher, the invention can select a proper power generation mode according to the actual temperature gradient condition, so that the charging module can be charged in time, and the charging efficiency is high.
And in addition, once the actual temperature of the thermoelectric power generation chip is too high, the thermoelectric power generation chip can be directly connected to the heat dissipation structure through the metal wire, and heat is quickly conducted to the heat dissipation structure through the heat dissipation structure, so that the temperature of the thermoelectric power generation chip is quickly reduced, and the situation that heat dissipation is poor due to the fact that the charging module is damaged or the temperature generated by the operation of the charging module is increased is avoided.
Finally, the invention also properly controls the concentration of the tin selenide-based nanorod in the first type nanowire and the second type nanowire, thereby ensuring that the first type nanowire and the second type nanowire positioned in the middle area have enough doping concentration, further ensuring the thermoelectric conversion performance of the nonmagnetic Seebeck thermoelectric structure, and further ensuring the power generation efficiency of generating power by utilizing the nonmagnetic Seebeck thermoelectric structure.
Finally, it should be emphasized that the foregoing is merely a preferred embodiment of the present invention, and is not intended to limit the invention, but rather that various changes and modifications can be made by those skilled in the art without departing from the spirit and principles of the invention, and any modifications, equivalent substitutions, improvements, etc. are intended to be included within the scope of the present invention.
Claims (10)
1. The thermoelectric generation chip, integrated in three-dimensional integrated circuit, its characterized in that, this thermoelectric generation chip includes:
A first grain layer and a second grain layer, wherein an electrically insulating dielectric layer is formed between the first grain layer and the second grain layer, a magnetic Seebeck thermoelectric structure is arranged in the first grain layer, and a non-magnetic Seebeck thermoelectric structure is arranged in the second grain layer;
A chip element layer is arranged on one side, far away from the medium layer, of the first grain layer, a temperature control valve, a temperature control circuit and a charging module are arranged on the chip element layer, the temperature control valve is electrically connected with the temperature control circuit, the temperature control circuit is electrically connected with the charging module, and the temperature control valve can be selectively in a first switch state or a second switch state;
When the temperature control valve is in the first switch state, the temperature control valve connects the charging module to the magnetic seebeck thermoelectric structure; the temperature control valve connects the charging module to the non-magnetic seebeck thermoelectric structure when the temperature control valve is in the second switch state.
2. The thermoelectric generation chip according to claim 1, wherein:
one side of the thermoelectric generation chip is provided with a heat dissipation structure;
The temperature control valve can be in a third switch state selectively, and when the temperature control valve is in the third switch state, the temperature control valve enables the thermoelectric generation chip to be connected to the heat dissipation structure.
3. The thermoelectric generation chip according to claim 1 or 2, characterized in that:
The magnetic Seebeck thermoelectric structure body is provided with a conductive material layer, a Seebeck insulator is wrapped outside the conductive material layer, a non-magnetic metal layer is wrapped outside the Seebeck insulator, and a dielectric material layer is wrapped outside the non-magnetic metal layer.
4. The thermoelectric generation chip according to claim 1 or 2, characterized in that:
the nonmagnetic Seebeck thermoelectric structure body is provided with two metal film layers, a first type nanowire and a second type nanowire which are arranged at intervals are arranged between the two metal film layers, and the adjacent first type nanowire and second type nanowire are connected through a connecting terminal.
5. The thermoelectric generation chip according to claim 4, wherein:
One of the first type of nanowire and the second type of nanowire is made using a thermoelectric material doped with an N-type dopant, and the other of the first type of nanowire and the second type of nanowire is made using a thermoelectric material doped with a P-type dopant.
6. The thermoelectric generation chip according to claim 5, wherein:
The first type of nanowires are above 80% based on tin selenide nanorod concentration in a portion above 10 nanometers from the bottom; and/or
The second type of nanowires are above 80% based on tin selenide nanorod concentration in a portion above 10 nanometers from the bottom.
7. The thermoelectric generation chip according to claim 1 or 2, characterized in that:
And an on-chip through hole extending along the stacking direction from the first grain layer to the second grain layer is also arranged in the thermoelectric generation chip, and conductive materials are filled in the on-chip through hole.
8. The working method of the thermoelectric generation chip is applied to the thermoelectric generation chip as claimed in claim 1, and is characterized in that:
Acquiring the actual temperature gradient of the thermoelectric generation chip, and if the actual temperature gradient is smaller than a preset temperature gradient threshold value, enabling the temperature control valve to be in the first switch state, wherein the temperature control valve enables the charging module to be connected to the magnetic Seebeck thermoelectric structure body; and if the actual temperature gradient is greater than or equal to a preset temperature gradient threshold, the temperature control valve is in the second switch state, and the temperature control valve enables the charging module to be connected to the nonmagnetic Seebeck thermoelectric structure body.
9. The method for operating a thermoelectric power generation chip according to claim 8, wherein:
one side of the thermoelectric generation chip is provided with a heat dissipation structure;
The method further comprises the steps of: and acquiring the actual temperature of the thermoelectric power generation chip, and if the actual temperature is higher than a preset temperature threshold value, enabling the temperature control valve to be in a third switch state, wherein the temperature control valve enables the thermoelectric power generation chip to be connected to the heat dissipation structure.
10. A three-dimensional integrated circuit, comprising:
a substrate, wherein a stacking structure is formed above the substrate, and the stacking structure comprises more than two layers of functional chips;
The method is characterized in that:
At least one thermoelectric power generation chip according to any one of claims 1 to 7 is arranged in the stacked structure, heat generated by the operation of the functional chip is conducted to the thermoelectric power generation chip through the through holes extending along the stacking direction, the thermoelectric power generation chip forms current by utilizing the temperature difference between the hot end point and the cold end point, and the thermoelectric power generation chip outputs current to the functional chip and/or outputs current to the outside of the three-dimensional integrated circuit.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20140209142A1 (en) * | 2011-09-05 | 2014-07-31 | Jun Hayakawa | Thermoelectric conversion element and thermoelectric conversion module using same |
| CN107331765A (en) * | 2017-07-06 | 2017-11-07 | 西安交通大学 | A kind of thermoelectric conversion element structure based on spin Seebeck effect |
| US20200083284A1 (en) * | 2018-09-11 | 2020-03-12 | Intel Corporation | Semiconductor device heat extraction by spin thermoelectrics |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140209142A1 (en) * | 2011-09-05 | 2014-07-31 | Jun Hayakawa | Thermoelectric conversion element and thermoelectric conversion module using same |
| CN107331765A (en) * | 2017-07-06 | 2017-11-07 | 西安交通大学 | A kind of thermoelectric conversion element structure based on spin Seebeck effect |
| US20200083284A1 (en) * | 2018-09-11 | 2020-03-12 | Intel Corporation | Semiconductor device heat extraction by spin thermoelectrics |
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