CN118472142A - Reverse-polarity red light LED chip and manufacturing method thereof - Google Patents
Reverse-polarity red light LED chip and manufacturing method thereof Download PDFInfo
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Abstract
The application relates to the technical field of LEDs, in particular to a reverse-polarity red light LED chip and a manufacturing method thereof. The reverse polarity red light LED chip comprises a P electrode, a Si substrate, a first bonding layer, a second bonding layer, a blocking layer, a silver mirror layer, a dielectric film layer, a GaP window layer, a P type semiconductor layer, a light emitting layer, an N type semiconductor layer and an N electrode which are sequentially arranged from bottom to top; the N-type semiconductor layer comprises a GaAs ohmic contact ring arranged on the upper surface of the roughened layer; the N electrode comprises an electrode mirror layer, an electrode inner layer and an electrode outer layer; the electrode mirror layer is embedded into the GaAs ohmic contact ring. The reversed polarity LED chip provided by the application has the advantages of high brightness, possibly stable performance and low production cost.
Description
Technical Field
The invention relates to the technical field of LEDs, in particular to a reverse-polarity red light LED chip and a manufacturing method thereof.
Background
The material and the manufacturing process of the reverse polarity red light LED chip are different from those of the traditional red light LED chip, and the reverse polarity red light LED chip has higher luminous efficiency than the traditional polarity chip and is widely applied to the fields of illumination and outdoor display screens.
With the continuous expansion of application range scenes, market competition is vigorous, and new requirements are put forward on the brightness and reliability of the reversed-polarity LEDs in order to meet the increasing consumption demands; in addition, in the chip production process, noble metal occupies half of the wall of the river mountain, so that the design of the LED chip with high brightness, reliable and stable performance and capability of reducing the production cost is a problem to be solved urgently.
Disclosure of Invention
The invention aims to provide a reverse-polarity red light LED chip and a manufacturing method thereof, which have the advantages of high brightness, possibly stable performance and low production cost.
In order to solve the problems, the technical scheme provided by the invention is as follows:
The first aspect of the invention provides a reverse polarity red light LED chip, which comprises a P electrode, a Si substrate, a first bonding layer, a second bonding layer, a barrier layer, a silver mirror layer, a dielectric film layer, a GaP window layer, a P type semiconductor layer, a light emitting layer, an N type semiconductor layer and an N electrode which are sequentially arranged from bottom to top; the N-type semiconductor layer comprises an N-type limiting layer, a current expansion layer, a roughened layer and a GaAs ohmic contact ring, wherein the N-type limiting layer, the current expansion layer and the roughened layer are sequentially arranged from bottom to top;
The N electrode comprises an electrode mirror layer, an electrode inner layer and an electrode outer layer;
The electrode mirror layer is matched with the GaAs ohmic contact ring in shape, the electrode mirror layer is completely embedded into the GaAs ohmic contact ring, and the lower surface of the electrode mirror layer is in contact with the upper surface of the roughened layer;
the electrode inner layer covers the outer surface of the GaAs ohmic contact ring embedded with the electrode mirror layer, and adopts a multi-layer structure, wherein the preparation material of one core layer is AlCu;
the electrode outer layer covers the outer surface of the electrode inner layer.
Further, the preparation materials of the electrode inner layer comprise Au, auGe, ti, alCu and Al which are evaporated in sequence, wherein the thicknesses of the materials are respectively 200 angstroms, 1000 angstroms, 100 angstroms, 3.5 microns and 0.5 microns;
Wherein the mass percentage of Cu in the AlCu material is 2-5%.
Further, the preparation materials of the outer layer of the electrode comprise Ti and Au which are sequentially evaporated, and the thicknesses of the Ti and the Au are respectively 100 angstroms and 3000 angstroms;
the preparation materials of the electrode mirror layer comprise Ag and TiW which are evaporated in sequence, and the thicknesses of the Ag and TiW are 3000 angstroms and 200 angstroms respectively.
Further, the GaAs ohmic contact ring is in the shape of a square ring, a circular ring or an elliptical ring;
the annular width of the GaAs ohmic contact ring is 5-7 microns;
the upper surface of the electrode mirror layer is flush with the upper surface of the GaAs ohmic contact ring.
Further, the dielectric film layer is provided with a plurality of through holes, and ohmic contact blocks are arranged in the through holes;
The silver mirror surface layer is provided with a plurality of protruding blocks, the protruding blocks are matched with the through holes in shape and are embedded into the through holes, the tops of the protruding blocks are provided with grooves, the ohmic contact blocks are matched with the grooves in shape, and the ohmic contact blocks are embedded into the grooves;
the upper surface of the ohmic contact block is contacted with the lower surface of the GaP window layer.
Further, the size of the through hole is 10-12 microns; the size of the ohmic contact block is 1/4-1/2 of the size of the through hole;
the thickness of the ohmic contact block is 0.3 micrometer;
The thickness of the dielectric film layer is 5000 angstroms.
Further, the thickness of the silver mirror layer is 3000 angstroms;
the preparation materials of the barrier layer comprise Ti, pt, au, ti and Ni which are evaporated in sequence, wherein the thicknesses of the materials are respectively 200 angstroms, 2000 angstroms, 100 angstroms and 1000 angstroms.
Further, the preparation materials of the first bonding layer comprise Ti, pt and Au which are sequentially evaporated, wherein the thicknesses of the Ti, the Pt and the Au are respectively 200 angstroms, 200 angstroms and 2000 angstroms;
The second bonding layer is prepared from In, and the thickness of the second bonding layer is 3 microns.
Further, the side wall of the chip is provided with a cutting channel etched from the upper surface of the chip to the GaP window layer, and the surface of the cutting channel is covered and provided with a passivation layer;
the passivation layer is made of silicon nitride or silicon oxide.
Another aspect of the present invention provides a method for manufacturing the reverse polarity red LED chip, including:
s1, providing a GaAs substrate as a reverse polarity infrared epitaxial structure growth substrate;
S2, growing an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer and a GaP window layer on the GaAs substrate in sequence;
s3, depositing silicon dioxide on the surface of the GaP window layer by PECVD to prepare a dielectric film layer;
S4, utilizing a negative photoresist mask to manufacture a patterned conductive hole pattern, wherein the conductive hole is 4-6 microns in size, corroding a dielectric film material in the conductive hole through a fluorine-containing solution, flushing water for high rotation, utilizing an electron beam evaporation cold plating mode to evaporate an ohmic contact block in the conductive hole, and completing the manufacture of the ohmic contact block through a negative photoresist stripping process;
s5, adopting positive photoresist sleeve to etch and manufacture a patterned through hole pattern, wherein the through hole pattern is aligned with the conductive hole pattern, the size of the through hole is 10-12 microns, and a fluorine-containing solution is adopted to etch away a dielectric film material in the through hole in a wet etching mode;
s6, sputtering a silver mirror surface layer on the surface in a sputtering mode, and continuously plating a barrier layer;
s7, evaporating a second bonding layer on the surface by an electron beam evaporation mode;
s8, evaporating the first bonding layer on the prepared Si substrate in an electron beam evaporation mode;
s9, sticking the second bonding layer and the first bonding layer of the epitaxial wafer together to finish bonding of the second bonding layer and the first bonding layer;
S10, placing the bonded wafer source into a mixed solution of ammonia water and hydrogen peroxide, and removing the GaAs substrate through chemical corrosion to expose the N-type semiconductor layer;
S11, manufacturing a patterned GaAs ohmic contact ring pattern through a negative photoresist mask, corroding the GaAs ohmic contact layer through a mixed solution of phosphoric acid, hydrogen peroxide and water, and flushing water for high rotation; preparing an electrode mirror surface layer by utilizing a sputtering mode, and finishing the manufacture of the electrode mirror surface layer by a negative photoresist stripping process;
s12, manufacturing a patterned electrode inner layer pattern through a negative photoresist mask, wherein the size of the electrode inner layer pattern is larger than that of the GaAs ohmic contact ring pattern, evaporating the electrode inner layer by utilizing an electron beam evaporation mode, and finishing the electrode inner layer manufacturing through a negative photoresist stripping process;
S13, manufacturing a patterned electrode outer layer pattern through a negative photoresist mask, wherein the size of the electrode outer layer pattern is larger than that of the electrode inner layer pattern, evaporating the electrode outer layer by utilizing an electron beam evaporation mode, and finishing the manufacturing of the electrode outer layer through a negative photoresist stripping process;
s14, adopting positive photoresist sleeve to etch to manufacture a cutting channel pattern, and carrying out cutting channel etching in a dry etching mode;
S15, adopting positive photoresist sleeve to etch to manufacture a roughened layer protection pattern, and carrying out surface roughening in a wet etching mode;
s16, depositing a passivation layer by PECVD, manufacturing a passivation layer pattern by positive photoresist sleeve etching, and completing the manufacturing of the passivation layer by wet etching;
s17, thinning the Si substrate, manufacturing the P electrode, and manufacturing the LED chip by laser cutting.
Compared with the prior art, the invention has the beneficial effects that:
1. According to the reverse polarity red light LED chip provided by the application, the novel electrode structure is matched with the GaAs ohmic contact ring structure, on one hand, the GaAs ohmic contact ring can guide current to diffuse from the lower part of the N electrode to the periphery, and current is reduced from being converged into the light-emitting layer from the lower part of the N electrode to emit light; the electrode mirror surface layer embedded in the GaAs ohmic contact ring is flat in surface, so that light emitted by the light-emitting layer and emitted to the N electrode can be effectively reflected back, electrode absorption is avoided, and the light emergent probability is increased. On the other hand, the AlCu alloy material added in the electrode inner layer and the GaAs ohmic contact ring arranged around the electrode mirror surface layer can provide a protection effect for the electrode mirror surface layer, can effectively resist the impact force in the welding line process, ensures that the electrode mirror surface layer has a stable structure, and avoids the damage of the electrode mirror surface layer caused by the impact force in the welding line process or external impact force.
2. The N electrode adopts the structure that electrode skin, electrode inlayer and electrode mirror surface layer carry out the cladding layer by layer, preset the electrode inlayer earlier, the electrode inlayer adopts Au, auGe, ti, alCu and the Al of coating by vaporization in proper order, and mainly regard as the AlCu material, low cost, the thickness of electrode inlayer can set up very thick, can effectively resist the impact force of bonding wire process, keep the original shape of electrode, the periphery sets up the electrode skin, the electrode skin is mainly with thinner Au, guarantee the solderability (the gold layer can be effectively fused with the solder ball on the one hand), on the other hand can effectively protect electrode inlayer stable in material.
3. According to the application, the ohmic contact block with smaller size is arranged in the larger through hole, and is embedded into the groove at the top of the convex block, so that the silver mirror surface material can be covered on the periphery and the lower surface of the ohmic contact block at the same time, the contact area between the ohmic contact block and the silver mirror surface layer is obviously increased, and the effective electric connection between the silver mirror surface layer and the ohmic contact block is ensured; meanwhile, the structural design does not need to enlarge the size of an ohmic contact block, so that large-area epitaxial material roughness is not caused, a relatively flat substrate can be provided for preparing the silver mirror surface layer, and the prepared silver mirror surface layer is guaranteed to have a good optical reflection effect.
4. When the patterned GaAs ohmic contact layer graph is manufactured, the electrode mirror layer is manufactured through negative photoresist stripping, the manufacturing method is simple and easy to operate, and the manufactured electrode mirror layer is stable in structure; the inner layer electrode is mainly made of low-cost metal, and the inner layer electrode and the outer layer electrode are respectively made, so that the outer layer electrode can fully cover the inner layer electrode, the influence of external temperature, water vapor and chemical substances on the inner layer electrode is reduced, and the manufacturing cost is reduced under the condition of ensuring stable performance.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application. In the drawings:
FIG. 1 is a schematic diagram of a reverse polarity red LED chip according to some embodiments of the present application;
FIG. 2 is an enlarged view of part of the portion A of FIG. 1;
FIG. 3 is a schematic diagram of an epitaxial structure of a reverse polarity red LED according to some embodiments of the present application;
FIG. 4 is a schematic diagram of a structure of a reverse polarity red LED epitaxial structure according to some embodiments of the present application with dielectric layers and conductive vias formed thereon;
FIG. 5 is a schematic diagram of a reverse polarity red LED epitaxial structure of some embodiments of the present application with through holes formed therein;
FIG. 6 is a schematic diagram of another view angle structure of the reverse polarity red LED epitaxial structure of some embodiments of the present application with through holes formed therein;
FIG. 7 is a schematic diagram of a reverse polarity red LED epitaxial structure according to some embodiments of the present application to form a second bonding layer;
FIG. 8 is a schematic diagram of a reverse polarity red LED epitaxial structure of some embodiments of the present application forming a GaAs ohmic contact ring and an electrode mirror layer;
FIG. 9 is a schematic diagram of another view angle structure of the reverse polarity red LED epitaxial structure of some embodiments of the present application forming a GaAs ohmic contact ring and an electrode mirror layer;
FIG. 10 is a schematic diagram of an N electrode formed by an epitaxial structure of a red LED with reverse polarity according to some embodiments of the present application;
Description of the drawings: 1. a GaAs substrate; 2. an N-type semiconductor layer; 3. a light emitting layer; 4. a P-type semiconductor layer; 5. a GaP window layer; 6. a dielectric film layer; 7. an ohmic contact block; 8. a silver mirror layer; 9. a barrier layer; 10. a first bonding layer; 11. a Si substrate; 12. a second bonding layer; 13. an N electrode; 14. an electrode mirror layer; 15. an electrode inner layer; 16. an electrode outer layer; 17. a passivation layer; 18. a P electrode; 19. an N-type limiting layer; 20. a current spreading layer; 21. coarsening the layer; 22. a GaAs ohmic contact layer; 23. GaAs ohmic contact ring; 24. a through hole; 25. a bump; 27. and a conductive hole.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. The following description of at least one exemplary embodiment is merely exemplary in nature and is in no way intended to limit the application, its application, or uses. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The relative arrangement of the components and steps, numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present application unless it is specifically stated otherwise. Meanwhile, it should be understood that the sizes of the respective parts shown in the drawings are not drawn in actual scale for convenience of description. Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail, but should be considered part of the specification where appropriate. In all examples shown and discussed herein, any specific values should be construed as merely illustrative, and not a limitation. Thus, other examples of the exemplary embodiments may have different values. It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further discussion thereof is necessary in subsequent figures.
In the description of the present application, it should be understood that the terms "first," "second," and the like are used for defining the components, and are merely for convenience in distinguishing the corresponding components, and the terms are not meant to have any special meaning unless otherwise indicated, so that the scope of the present application is not to be construed as being limited.
In the description of the present application, it should be understood that the azimuth or positional relationships indicated by the azimuth terms such as "front, rear, upper, lower, left, right", "lateral, vertical, horizontal", and "top, bottom", etc., are generally based on the azimuth or positional relationships shown in the drawings, merely to facilitate description of the present application and simplify the description, and these azimuth terms do not indicate and imply that the apparatus or elements referred to must have a specific azimuth or be constructed and operated in a specific azimuth, and thus should not be construed as limiting the scope of protection of the present application; the orientation word "inner and outer" refers to inner and outer relative to the contour of the respective component itself.
The application is described in further detail below in connection with specific examples:
Example 1
Fig. 1 is a schematic diagram of a reverse polarity red LED chip according to some embodiments of the present application; FIG. 2 is an enlarged view of part of the portion A of FIG. 1; specifically, referring to fig. 1 and 2, the present application provides a reverse polarity red LED chip, which includes a P electrode 18, a Si substrate 11, a first bonding layer 10, a second bonding layer 12, a barrier layer 9, a silver mirror layer 8, a dielectric film layer 6, a GaP window layer 5, a P-type semiconductor layer 4, a light emitting layer 3, an N-type semiconductor layer 2, and an N electrode 13, which are sequentially disposed from bottom to top; the N-type semiconductor layer 2 comprises an N-type limiting layer 19, a current expansion layer 20, a roughened layer 21 and a GaAs ohmic contact ring 23, wherein the N-type limiting layer 19, the current expansion layer 20 and the roughened layer 21 are sequentially arranged from bottom to top; the N electrode 13 comprises an electrode mirror layer 14, an electrode inner layer 15 and an electrode outer layer 16; the electrode mirror layer 14 is matched with the GaAs ohmic contact ring 23 in shape, the electrode mirror layer 14 is completely embedded into the GaAs ohmic contact ring 23, and the lower surface of the electrode mirror layer 14 is in contact with the upper surface of the roughened layer 21; the electrode inner layer 15 covers the outer surface of the GaAs ohmic contact ring 23 embedded with the electrode mirror layer 14; the electrode inner layer 15 adopts a multi-layer structure, wherein a core layer is made of AlCu, and the electrode outer layer 16 is covered on the outer surface of the electrode inner layer 15.
According to the application, a novel electrode structure is matched with the structural design of the GaAs ohmic contact ring 23, on one hand, the GaAs ohmic contact ring 23 can guide current to diffuse from the direction right below the N electrode 13 to the periphery, current is reduced to be converged into the light-emitting layer 3 from the direction right below the N electrode 13 to emit light, the electrode mirror layer 14 is prepared in an embedded mode in the GaAs ohmic contact ring 23, and a flat electrode mirror layer 14 can be obtained, so that light emitted by the light-emitting layer 3 and emitted to the N electrode 13 can be effectively reflected back, electrode absorption is avoided, and the light emergence probability is increased. On the other hand, the AlCu alloy material (Cu is higher than the traditional electrode material) added in the electrode inner layer 15, and the GaAs ohmic contact ring 23 arranged around the electrode mirror layer 14 can provide a protection effect for the electrode mirror layer 14, so that the impact force in the wire bonding process can be effectively resisted, the structure of the electrode mirror layer 14 is stable, and the damage to the electrode mirror layer 14 caused by the impact force in the wire bonding process or external impact force is avoided.
The shape and arrangement position of the N electrode 13 according to the present application may be set according to the existing reverse polarity red LED, and the shape may be, for example, a circle, an ellipse, a positive direction, a rectangle, etc., preferably a circle, and accordingly, the electrode mirror layer 14, the electrode inner layer 15, and the electrode outer layer 16 are all circular, and the sizes of the electrode mirror layer 14, the electrode inner layer 15, and the electrode outer layer 16 become larger in order.
According to some preferred embodiments, the electrode inner layer 15 is prepared from materials including Au, auGe, ti, alCu and Al, which are sequentially evaporated, and have thicknesses of 200 a, 1000 a, 100 a, 3.5 microns and 0.5 microns, respectively; the mass percentage of Cu in the AlCu material is 2-5%, the preparation material of the electrode outer layer 16 comprises Ti and Au which are evaporated in sequence, and the thickness of the Ti and the Au is 100 angstroms and 3000 angstroms respectively; the electrode mirror layer 14 is prepared from Ag and TiW which are sequentially evaporated, and the thicknesses of the Ag and TiW are 3000 angstroms and 200 angstroms respectively. According to the N electrode 13 disclosed by the application, the electrode outer layer 16, the electrode inner layer 15 and the electrode mirror layer 14 are adopted for layer-by-layer cladding, the electrode inner layer 15 is preset through adjusting the electrode structure, the electrode inner layer 15 is sequentially evaporated Au, auGe, ti, alCu and Al and mainly made of AlCu materials, the cost is low, the thickness of the electrode inner layer 15 can be very thick, the impact force in the welding line process can be effectively resisted, the original shape of the electrode is kept, the electrode outer layer 16 is arranged at the periphery, the electrode outer layer 16 is mainly made of thinner Au, the weldability (the gold layer can be effectively fused with a welding ball) is ensured, and the stable material of the electrode inner layer 15 can be effectively protected.
The shape of the GaAs ohmic contact ring 23 in the present application is adapted to the shape of the N electrode 13, and according to some preferred embodiments, the GaAs ohmic contact ring 23 is a square ring, a circular ring, or an elliptical ring; the width of the GaAs ohmic contact ring 23 is 5-7 microns, and the upper surface of the electrode mirror layer 14 is flush with the upper surface of the GaAs ohmic contact ring 23.
According to some preferred embodiments, the dielectric film layer 6 is provided with a plurality of through holes 24, and ohmic contact blocks 7 are arranged in the through holes 24; the silver mirror surface layer 8 is provided with a plurality of protruding blocks 25, the protruding blocks 25 are matched with the through holes 24 in shape and are embedded into the through holes 24, grooves are formed in the tops of the protruding blocks 25, the ohmic contact blocks 7 are matched with the grooves in shape, and the ohmic contact blocks 7 are embedded into the grooves; the upper surface of the ohmic contact block 7 is in contact with the lower surface of the GaP window layer 5.
The ohmic contact blocks 7 are regularly arranged in the area, except for the area right below the N electrode 13, of the dielectric film layer 6, so that current can be prevented from being gathered right below the N electrode 13, and the current is uniformly distributed around, and the brightness of the chip is more uniform.
The size of the through holes 24 is 10-12 microns; the size of the ohmic contact block 7 is 1/4-1/2 of the size of the through hole 24, and the center of the ohmic contact block 7 coincides with the center of the through hole 24; the thickness of the ohmic contact block 7 is 0.3 micrometers; the thickness of the dielectric film layer 6 is 5000 angstroms.
The ohmic contact material may cause roughness on the surface of the epitaxial material, so that the size of the through hole 24 and the ohmic contact block 7 on the dielectric film layer 6 is usually smaller, which may cause a problem of suspension or poor contact between the ohmic contact material deposited in the through hole 24 and the silver mirror layer 8. According to the application, the ohmic contact block 7 with a smaller size is arranged in the larger through hole 24, and the ohmic contact block 7 is embedded into the groove at the top of the convex block 25, so that the silver mirror surface material can be covered on the periphery and the lower surface of the ohmic contact block 7 at the same time, the contact area between the ohmic contact block 7 and the silver mirror surface layer 8 is obviously increased, and the effective electric connection between the silver mirror surface layer 8 and the ohmic contact block 7 is ensured; meanwhile, the structural design does not need to enlarge the size of the ohmic contact block 7, cannot cause roughness of large-area epitaxial materials, and can provide a relatively flat substrate for preparing the silver mirror layer 8, so that the prepared silver mirror layer 8 is ensured to have a good optical reflection effect.
According to some preferred embodiments, the silver mirror layer 8 has a thickness of 3000 angstroms;
the barrier layer 9 can ensure the stability of the silver mirror layer 8, and according to some preferred embodiments, the barrier layer 9 is made of materials including Ti, pt, au, ti and Ni, which are sequentially evaporated, and have thicknesses of 200a, 2000 a, 100a and 1000 a, respectively.
According to some preferred embodiments, the preparation materials of the first bonding layer 10 include sequentially evaporating Ti, pt and Au, which have thicknesses of 200 angstroms, 200 angstroms and 2000 angstroms, respectively; the second bonding layer 12 is made of In, and the thickness of the second bonding layer 12 is 3 micrometers.
According to some preferred embodiments, the chip side walls have dicing streets etched from the chip upper surface to the GaP window layer 5, the surface of the dicing streets being covered with a passivation layer 17; the passivation layer 17 is made of silicon nitride or silicon oxide.
From the above, the reverse polarity red LED chip provided by the embodiment of the application has the following advantages:
1. according to the reverse-polarity red light LED chip provided by the application, the novel electrode structure is matched with the GaAs ohmic contact ring structure, on one hand, the GaAs ohmic contact ring can guide current to diffuse from the direction right below the N electrode to the periphery, current is reduced from the direction right below the N electrode to be LED into the luminescent layer 3 to emit light, the electrode mirror layer embedded in the GaAs ohmic contact ring can be prepared to obtain a flat electrode mirror layer, so that light emitted by the luminescent layer and emitted to the N electrode can be effectively reflected back, electrode absorption is avoided, and the light emergent probability is increased. On the other hand, the AlCu alloy material with higher hardness and the GaAs ohmic contact ring arranged around the electrode mirror surface layer are added in the electrode inner layer, so that a protective effect can be provided for the electrode mirror surface layer, impact force in the welding wire process can be effectively resisted, the electrode mirror surface layer is stable in structure, and damage to the electrode mirror surface layer caused by impact force in the welding wire process or external impact force is avoided.
2. The N electrode adopts a structure that an electrode outer layer, an electrode inner layer and an electrode mirror surface layer are coated layer by layer, the electrode inner layer is preset through adjusting the electrode structure, the electrode inner layer adopts Au, auGe, ti, alCu and Al which are sequentially evaporated, and mainly takes AlCu materials as main materials, the cost is low, the thickness of the electrode inner layer can be very thick, the impact force in the welding line process can be effectively resisted, the original shape of the electrode is kept, the electrode outer layer is arranged at the periphery, the electrode outer layer is mainly thinner Au, the weldability (the gold layer can be effectively fused with a welding ball) is ensured on the one hand, and the stable material of the electrode inner layer can be effectively protected on the other hand.
3. According to the application, the ohmic contact block with smaller size is arranged in the larger through hole, and is embedded into the groove at the top of the convex block, so that the silver mirror surface material can be covered on the periphery and the lower surface of the ohmic contact block at the same time, the contact area between the ohmic contact block and the silver mirror surface layer is obviously increased, and the effective electric connection between the silver mirror surface layer and the ohmic contact block is ensured; meanwhile, the structural design does not need to enlarge the size of an ohmic contact block, so that the large-area epitaxial material is not rough, a relatively flat substrate can be provided for preparing the silver mirror surface layer, and the prepared silver mirror surface layer is guaranteed to have a good optical reflection effect.
Example 2
Referring to fig. 1 to 10, the present embodiment provides a method for manufacturing a reverse polarity red LED chip, which includes:
Step one, please refer to fig. 3, fig. 3 is a schematic diagram showing an epitaxial structure of the reversed polarity red LED chip; providing a GaAs substrate 1 as a growth substrate of a reverse polarity infrared epitaxial structure, setting a program in an MOCVD machine, and sequentially growing an N-type semiconductor layer 2, a light-emitting layer 3, a P-type semiconductor layer 4 and a GaP window layer 5 on the GaAs substrate 1; the N-type semiconductor layer 2 comprises a GaAs ohmic contact layer 22, a roughened layer 21, a current expansion layer 20 and an N-type limiting layer 19;
as a preferred embodiment, the GaP window layer 5 has a thickness of 0.5-1.5 microns;
Step two, please refer to fig. 4, fig. 4 is a schematic diagram illustrating a structure of forming a dielectric film layer and a conductive hole on the reverse polarity red LED epitaxial structure according to some embodiments of the present application; cleaning an epitaxial wafer by using an acid-base solution, and depositing silicon dioxide on the surface of the GaP window layer 5 by using PECVD to prepare a dielectric film layer 6; the negative photoresist mask is utilized to manufacture a patterned conductive hole 27 pattern, the size of the conductive hole 27 is 4-6 microns, a medium film material in the conductive hole 27 is corroded through a fluorine-containing solution, flushing water is performed for high rotation, an electronic beam evaporation cold plating mode is further utilized to evaporate an ohmic contact block 7 in the conductive hole 27, and the ohmic contact block 7 is manufactured through a negative photoresist stripping process;
As a preferred embodiment, the thickness of the dielectric film layer 6 is 5000 angstroms, the material of the ohmic contact block 7 is Au, auZn (or AuBe) and Au which are sequentially evaporated, and the thickness of the ohmic contact block 7 is 0.3 micron;
Step three, please refer to fig. 5 and fig. 6, wherein fig. 5 is a schematic diagram of a structure in which the reverse polarity red LED epitaxial structure is formed as a through hole according to some embodiments of the present application, and fig. 6 is a schematic diagram of another view angle structure in which the reverse polarity red LED epitaxial structure is formed as a through hole according to some embodiments of the present application; patterning the pattern of the through holes 24 by positive photoresist alignment, wherein the pattern of the through holes 24 is aligned with the pattern of the conductive holes 27, the size of the through holes 24 is 10-12 micrometers, and a fluorine-containing solution is adopted to etch away the dielectric film material in the through holes 24 by wet etching;
fig. 7 is a schematic structural diagram showing formation of a second bonding layer by the reverse polarity red LED epitaxial structure according to some embodiments of the present application; cleaning the surface by using an organic solution, sputtering a silver mirror layer 8 on the surface by a sputtering mode, and further plating a barrier layer 9; cleaning the surface by using an organic solution, and evaporating a second bonding layer 12 on the surface by an electron beam evaporation mode;
As a preferred embodiment, the preparation materials of the barrier layer 9 include Ti, pt, au, ti and Ni, which are sequentially evaporated, and have thicknesses of 200 a, 2000 a, 100 a and 1000 a, respectively.
As a preferred embodiment, the second bonding layer 12 is made of In, and the thickness of the second bonding layer 12 is 3 micrometers.
Referring to fig. 8 and 9 in combination, fig. 8 is a schematic structural diagram of a GaAs ohmic contact ring and an electrode mirror layer formed by the reverse polarity red LED epitaxial structure according to some embodiments of the present application; FIG. 9 is a schematic diagram of another view angle structure of the reverse polarity red LED epitaxial structure of some embodiments of the present application forming a GaAs ohmic contact ring and an electrode mirror layer;
Step five, evaporating the first bonding layer 10 on the prepared Si substrate 11 in an electron beam evaporation manner;
as a preferred embodiment, the preparation materials of the first bonding layer 10 include sequentially evaporating Ti, pt and Au, which have thicknesses of 200 angstroms, 200 angstroms and 2000 angstroms, respectively;
step six, sticking the second bonding layer 12 of the epitaxial wafer and the first bonding layer 10 together, putting the epitaxial wafer and the first bonding layer into a special bonding jig, putting the bonding jig into a bonding machine table, and finishing bonding of the second bonding layer and the first bonding layer in a low-temperature low-pressure mode;
as a preferred example, the bonding of the two is accomplished at a low temperature of 200 ℃ and a low pressure of 2000 kgf;
Step seven, putting the bonded wafer source into a mixed solution of ammonia water and hydrogen peroxide, and removing the GaAs substrate 1 through chemical corrosion to expose the N-type semiconductor layer 2;
Step eight, manufacturing a patterned GaAs ohmic contact ring 23 pattern through a negative photoresist mask, corroding the GaAs ohmic contact layer 22 through a mixed solution of phosphoric acid, hydrogen peroxide and water, and performing flushing high spin; further utilizing a sputtering mode to sputter and evaporate the electrode mirror layer 14, and completing the manufacture of the electrode mirror layer 14 through a negative photoresist stripping process;
as a preferred embodiment, the electrode mirror layer 14 is made of Ag and TiW sequentially evaporated to a thickness of 3000 a and 200 a, respectively.
Referring to fig. 10 in combination with step nine to step ten, fig. 10 is a schematic diagram illustrating a structure of forming an N electrode by using the reverse polarity red LED epitaxial structure according to some embodiments of the present application;
step nine, manufacturing a pattern of the inner electrode layer 15 through a negative photoresist mask, wherein the pattern size of the inner electrode layer 15 is larger than that of the GaAs ohmic contact ring 23, evaporating the inner electrode layer 15 by utilizing an electron beam evaporation mode, finishing the manufacturing of the inner electrode layer 15 through a negative photoresist stripping process, and fusing at a high temperature of 280-320 ℃;
As a preferred embodiment, the preparation materials of the electrode inner layer 15 include Au, auGe, ti, alCu and Al which are sequentially evaporated, and the thicknesses thereof are 200 angstroms, 1000 angstroms, 100 angstroms, 3.5 micrometers and 0.5 micrometers, respectively; the mass percentage of Cu in the AlCu material is 2-5%.
Step ten, manufacturing a patterned electrode outer layer 16 pattern through a negative photoresist mask, wherein the pattern size of the electrode outer layer 16 is larger than that of the electrode inner layer 15 pattern size, evaporating the electrode outer layer 16 by utilizing an electron beam evaporation mode, and completing the manufacturing of the electrode outer layer 16 through a negative photoresist stripping process;
As a preferred embodiment, the electrode outer layer 16 is made of Ti and Au sequentially evaporated to a thickness of 100 a and 3000 a, respectively;
Referring to fig. 1 and fig. 2 in combination, fig. 1 is a schematic diagram of a reverse polarity red LED chip according to some embodiments of the present application; FIG. 2 is an enlarged view of part of the portion A of FIG. 1;
step eleven, adopting positive photoresist sleeve to etch to manufacture a cutting channel pattern, and carrying out cutting channel etching in a dry etching mode until 5000 angstroms of GaP window layer 5 remains;
Step twelve, adopting positive photoresist sleeve to etch to manufacture a roughening layer 21 protection pattern, and carrying out surface roughening in a wet etching mode;
Thirteenth, carrying out organic cleaning on the wafer, depositing a passivation layer 17 by PECVD, manufacturing a passivation layer 17 pattern by positive photoresist sleeve etching, and completing the manufacturing of the passivation layer 17 by a wet etching mode;
Fourteen steps are that the Si substrate 11 is thinned, the P electrode 18 is manufactured, and the LED chip is manufactured through laser cutting.
From the above, the method for manufacturing the reverse polarity red LED chip provided by the embodiment of the application has the following advantages:
1. According to the preparation method provided by the application, after the first conductive hole pattern is etched, the ohmic contact block is manufactured through evaporation stripping; the second time of alignment dielectric film through hole pattern is sleeved with the first time, so that the through hole is etched more greatly; the first time smaller conducting holes form smaller-pattern ohmic contact blocks, so that ohmic contact metal and a GaP window layer have smaller contact area (the ohmic contact can lead to rough surface and is unfavorable for manufacturing of a flat Ag mirror surface), the second time is to etch the through holes more greatly, the Ag mirror surface is effectively connected with the ohmic contact metal, the problems that suspended non-contact or step fracture occurs due to too small size of the through holes are avoided, and the optical effect is ensured while the electrical property is also ensured.
2. When the patterned GaAs ohmic contact layer graph is manufactured, the electrode mirror layer is manufactured through negative photoresist stripping, the manufacturing method is simple and easy to operate, and the manufactured electrode mirror layer is stable in structure; the inner layer electrode is mainly made of low-cost metal, and the inner layer electrode and the outer layer electrode are respectively made, so that the outer layer electrode can fully cover the inner layer electrode, the influence of external temperature, water vapor and chemical substances on the inner layer electrode is reduced, and the manufacturing cost is reduced under the condition of ensuring stable performance.
The manufacturing method of the reverse polarity red LED chip provided by the embodiment of the present application obtains the reverse polarity red LED chip in the above embodiment 1, so that the method also has the advantages of the reverse polarity red LED chip in the above embodiment 1, and will not be described herein.
What is not described in this embodiment can be referred to in the relevant description of the rest of the application.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application and not for limiting the same; while the application has been described in detail with reference to the preferred embodiments, those skilled in the art will appreciate that: modifications and equivalents of some of the features of the specific embodiments of the present application may be made, and they are all included in the scope of the present application as claimed.
Claims (10)
1. The reverse polarity red light LED chip is characterized by comprising a P electrode, a Si substrate, a first bonding layer, a second bonding layer, a blocking layer, a silver mirror layer, a dielectric film layer, a GaP window layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N electrode which are sequentially arranged from bottom to top; the N-type semiconductor layer comprises an N-type limiting layer, a current expansion layer, a roughened layer and a GaAs ohmic contact ring, wherein the N-type limiting layer, the current expansion layer and the roughened layer are sequentially arranged from bottom to top;
The N electrode comprises an electrode mirror layer, an electrode inner layer and an electrode outer layer;
The electrode mirror layer is matched with the GaAs ohmic contact ring in shape, the electrode mirror layer is completely embedded into the GaAs ohmic contact ring, and the lower surface of the electrode mirror layer is in contact with the upper surface of the roughened layer;
the electrode inner layer covers the outer surface of the GaAs ohmic contact ring embedded with the electrode mirror layer, and adopts a multi-layer structure, wherein the preparation material of one core layer is AlCu;
the electrode outer layer covers the outer surface of the electrode inner layer.
2. The reverse polarity red LED chip of claim 1 wherein said electrode inner layer comprises sequentially evaporated Au, auGe, ti, alCu and Al having thicknesses of 200 angstroms, 1000 angstroms, 100 angstroms, 3.5 microns and 0.5 microns, respectively;
Wherein the mass percentage of Cu in the AlCu material is 2-5%.
3. The reverse polarity red light LED chip according to claim 1, wherein the preparation material of the outer electrode layer comprises Ti and Au which are sequentially evaporated, and the thicknesses of the Ti and the Au are respectively 100 angstroms and 3000 angstroms;
the preparation materials of the electrode mirror layer comprise Ag and TiW which are evaporated in sequence, and the thicknesses of the Ag and TiW are 3000 angstroms and 200 angstroms respectively.
4. The reverse polarity red LED die of claim 1 wherein said GaAs ohmic contact ring is in the shape of a square ring, a circular ring, or an oval ring;
the annular width of the GaAs ohmic contact ring is 5-7 microns;
the upper surface of the electrode mirror layer is flush with the upper surface of the GaAs ohmic contact ring.
5. The reverse polarity red light LED chip according to claim 1, wherein the dielectric film layer is provided with a plurality of through holes, and ohmic contact blocks are arranged in the through holes;
The silver mirror surface layer is provided with a plurality of protruding blocks, the protruding blocks are matched with the through holes in shape and are embedded into the through holes, the tops of the protruding blocks are provided with grooves, the ohmic contact blocks are matched with the grooves in shape, and the ohmic contact blocks are embedded into the grooves;
the upper surface of the ohmic contact block is contacted with the lower surface of the GaP window layer.
6. The reverse polarity red LED chip of claim 5 wherein said through holes have a size of 10 microns to 12 microns; the size of the ohmic contact block is 1/4-1/2 of the size of the through hole;
the thickness of the ohmic contact block is 0.3 micrometer;
The thickness of the dielectric film layer is 5000 angstroms.
7. The reverse polarity red LED chip of claim 5, wherein said silver mirror layer has a thickness of 3000 angstroms;
the preparation materials of the barrier layer comprise Ti, pt, au, ti and Ni which are evaporated in sequence, wherein the thicknesses of the materials are respectively 200 angstroms, 2000 angstroms, 100 angstroms and 1000 angstroms.
8. The reverse polarity red LED chip of claim 1 wherein said first bonding layer comprises a preparation material comprising sequentially vapor deposited Ti, pt and Au, having a thickness of 200 angstroms, 200 angstroms and 2000 angstroms, respectively;
The second bonding layer is prepared from In, and the thickness of the second bonding layer is 3 microns.
9. The reverse polarity red LED chip of claim 1, wherein said chip sidewall has dicing streets etched from the chip upper surface to the GaP window layer, the dicing streets surface covered with passivation layer;
the passivation layer is made of silicon nitride or silicon oxide.
10. A method of manufacturing a reverse polarity red LED chip according to any one of claims 1 to 9, comprising:
s1, providing a GaAs substrate as a reverse polarity infrared epitaxial structure growth substrate;
S2, growing an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer and a GaP window layer on the GaAs substrate in sequence;
s3, depositing silicon dioxide on the surface of the GaP window layer by PECVD to prepare a dielectric film layer;
S4, utilizing a negative photoresist mask to manufacture a patterned conductive hole pattern, wherein the conductive hole is 4-6 microns in size, corroding a dielectric film material in the conductive hole through a fluorine-containing solution, flushing water for high rotation, utilizing an electron beam evaporation cold plating mode to evaporate an ohmic contact block in the conductive hole, and completing the manufacture of the ohmic contact block through a negative photoresist stripping process;
s5, adopting positive photoresist sleeve to etch and manufacture a patterned through hole pattern, wherein the through hole pattern is aligned with the conductive hole pattern, the size of the through hole is 10-12 microns, and a fluorine-containing solution is adopted to etch away a dielectric film material in the through hole in a wet etching mode;
s6, sputtering a silver mirror surface layer on the surface in a sputtering mode, and continuously plating a barrier layer;
s7, evaporating a second bonding layer on the surface by an electron beam evaporation mode;
s8, evaporating the first bonding layer on the prepared Si substrate in an electron beam evaporation mode;
s9, sticking the second bonding layer and the first bonding layer of the epitaxial wafer together to finish bonding of the second bonding layer and the first bonding layer;
S10, placing the bonded wafer source into a mixed solution of ammonia water and hydrogen peroxide, and removing the GaAs substrate through chemical corrosion to expose the N-type semiconductor layer;
S11, manufacturing a patterned GaAs ohmic contact ring pattern through a negative photoresist mask, corroding the GaAs ohmic contact layer through a mixed solution of phosphoric acid, hydrogen peroxide and water, and flushing water for high rotation; preparing an electrode mirror surface layer by utilizing a sputtering mode, and finishing the manufacture of the electrode mirror surface layer by a negative photoresist stripping process;
s12, manufacturing a patterned electrode inner layer pattern through a negative photoresist mask, wherein the size of the electrode inner layer pattern is larger than that of the GaAs ohmic contact ring pattern, evaporating the electrode inner layer by utilizing an electron beam evaporation mode, and finishing the electrode inner layer manufacturing through a negative photoresist stripping process;
S13, manufacturing a patterned electrode outer layer pattern through a negative photoresist mask, wherein the size of the electrode outer layer pattern is larger than that of the electrode inner layer pattern, evaporating the electrode outer layer by utilizing an electron beam evaporation mode, and finishing the manufacturing of the electrode outer layer through a negative photoresist stripping process;
s14, adopting positive photoresist sleeve to etch to manufacture a cutting channel pattern, and carrying out cutting channel etching in a dry etching mode;
S15, adopting positive photoresist sleeve to etch to manufacture a roughened layer protection pattern, and carrying out surface roughening in a wet etching mode;
s16, depositing a passivation layer by PECVD, manufacturing a passivation layer pattern by positive photoresist sleeve etching, and completing the manufacturing of the passivation layer by wet etching;
s17, thinning the Si substrate, manufacturing the P electrode, and manufacturing the LED chip by laser cutting.
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