CN118435119A - 感光化射线性或感放射线性树脂组合物、感光化射线性或感放射线性膜、图案形成方法、电子器件的制造方法及化合物 - Google Patents
感光化射线性或感放射线性树脂组合物、感光化射线性或感放射线性膜、图案形成方法、电子器件的制造方法及化合物 Download PDFInfo
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- C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
- C07C309/07—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton
- C07C309/12—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
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- C07C309/41—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing singly-bound oxygen atoms bound to the carbon skeleton
- C07C309/42—Sulfonic acids having sulfo groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton containing singly-bound oxygen atoms bound to the carbon skeleton having the sulfo groups bound to carbon atoms of non-condensed six-membered aromatic rings
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- C07C311/01—Sulfonamides having sulfur atoms of sulfonamide groups bound to acyclic carbon atoms
- C07C311/02—Sulfonamides having sulfur atoms of sulfonamide groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
- C07C311/09—Sulfonamides having sulfur atoms of sulfonamide groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton the carbon skeleton being further substituted by at least two halogen atoms
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- C07C311/48—Amides of sulfonic acids, i.e. compounds having singly-bound oxygen atoms of sulfo groups replaced by nitrogen atoms, not being part of nitro or nitroso groups having nitrogen atoms of sulfonamide groups further bound to another hetero atom
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- C07C323/09—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and halogen atoms, or nitro or nitroso groups bound to the same carbon skeleton having sulfur atoms of thio groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton
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- C07C43/257—Ethers having an ether-oxygen atom bound to carbon atoms both belonging to six-membered aromatic rings
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- C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
- C07D333/52—Benzo[b]thiophenes; Hydrogenated benzo[b]thiophenes
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- C07C2601/12—Systems containing only non-condensed rings with a six-membered ring
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- C07C63/70—Monocarboxylic acids
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- C07C65/00—Compounds having carboxyl groups bound to carbon atoms of six—membered aromatic rings and containing any of the groups OH, O—metal, —CHO, keto, ether, groups, groups, or groups
- C07C65/01—Compounds having carboxyl groups bound to carbon atoms of six—membered aromatic rings and containing any of the groups OH, O—metal, —CHO, keto, ether, groups, groups, or groups containing hydroxy or O-metal groups
- C07C65/03—Compounds having carboxyl groups bound to carbon atoms of six—membered aromatic rings and containing any of the groups OH, O—metal, —CHO, keto, ether, groups, groups, or groups containing hydroxy or O-metal groups monocyclic and having all hydroxy or O-metal groups bound to the ring
- C07C65/05—Compounds having carboxyl groups bound to carbon atoms of six—membered aromatic rings and containing any of the groups OH, O—metal, —CHO, keto, ether, groups, groups, or groups containing hydroxy or O-metal groups monocyclic and having all hydroxy or O-metal groups bound to the ring o-Hydroxy carboxylic acids
- C07C65/10—Salicylic acid
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021210013 | 2021-12-23 | ||
| JP2021-210013 | 2021-12-23 | ||
| PCT/JP2022/045518 WO2023120250A1 (ja) | 2021-12-23 | 2022-12-09 | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、電子デバイスの製造方法、及び化合物 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118435119A true CN118435119A (zh) | 2024-08-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280083885.9A Pending CN118435119A (zh) | 2021-12-23 | 2022-12-09 | 感光化射线性或感放射线性树脂组合物、感光化射线性或感放射线性膜、图案形成方法、电子器件的制造方法及化合物 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20240337931A1 (https=) |
| EP (1) | EP4455787A4 (https=) |
| JP (1) | JPWO2023120250A1 (https=) |
| KR (1) | KR102937062B1 (https=) |
| CN (1) | CN118435119A (https=) |
| IL (1) | IL313684A (https=) |
| TW (1) | TW202331415A (https=) |
| WO (1) | WO2023120250A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN121378176A (zh) * | 2025-07-31 | 2026-01-23 | 信越化学工业株式会社 | 鎓盐、光酸产生剂、化学增幅抗蚀剂组成物及图案形成方法 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2024128017A1 (https=) * | 2022-12-15 | 2024-06-20 | ||
| US20250076758A1 (en) * | 2023-08-31 | 2025-03-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photo acid generator |
| WO2025211316A1 (ja) * | 2024-04-05 | 2025-10-09 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法、化合物、酸拡散制御剤、及び酸発生剤 |
| TW202547894A (zh) * | 2024-05-31 | 2025-12-16 | 日商Jsr股份有限公司 | 感放射線性組成物及抗蝕劑圖案形成方法 |
| WO2026004682A1 (ja) * | 2024-06-24 | 2026-01-02 | サンアプロ株式会社 | スルホン酸塩、オキシムスルホネート、イミドスルホネート、アミドスルホネート、前記化合物を含む酸発生剤、前記酸発生剤を含むフォトレジスト |
| WO2026070715A1 (ja) * | 2024-09-27 | 2026-04-02 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
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Family Cites Families (19)
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| US7122294B2 (en) * | 2003-05-22 | 2006-10-17 | 3M Innovative Properties Company | Photoacid generators with perfluorinated multifunctional anions |
| JP2013061648A (ja) | 2011-09-09 | 2013-04-04 | Rohm & Haas Electronic Materials Llc | フォトレジスト上塗り組成物および電子デバイスを形成する方法 |
| KR102075960B1 (ko) | 2012-03-14 | 2020-02-11 | 제이에스알 가부시끼가이샤 | 포토레지스트 조성물, 레지스트 패턴 형성 방법, 산 확산 제어제 및 화합물 |
| JP5850873B2 (ja) | 2012-07-27 | 2016-02-03 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法 |
| JP5836299B2 (ja) | 2012-08-20 | 2015-12-24 | 富士フイルム株式会社 | パターン形成方法、感電子線性又は感極紫外線性樹脂組成物、及びレジスト膜、並びに、これらを用いた電子デバイスの製造方法 |
| JP6002705B2 (ja) | 2013-03-01 | 2016-10-05 | 富士フイルム株式会社 | パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、及び、電子デバイスの製造方法 |
| JP5676021B2 (ja) | 2014-01-06 | 2015-02-25 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物及びそれを用いたパターン形成方法 |
| JP6429105B2 (ja) * | 2014-08-13 | 2018-11-28 | 宇部興産株式会社 | ジアリールヨードニウム塩 |
| US9644056B2 (en) | 2015-02-18 | 2017-05-09 | Sumitomo Chemical Company, Limited | Compound, resin and photoresist composition |
| JP6518475B2 (ja) | 2015-03-20 | 2019-05-22 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法、酸発生剤及び化合物 |
| KR102395705B1 (ko) | 2017-04-21 | 2022-05-09 | 후지필름 가부시키가이샤 | Euv광용 감광성 조성물, 패턴 형성 방법, 전자 디바이스의 제조 방법 |
| JP7117900B2 (ja) * | 2018-06-05 | 2022-08-15 | 株式会社日本触媒 | 化学増幅型レジスト用光ルイス酸発生剤、および化学増幅型レジスト組成物 |
| KR102537251B1 (ko) | 2018-06-28 | 2023-05-26 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 패턴 형성 방법, 전자 디바이스의 제조 방법, 수지 |
| JP7076570B2 (ja) | 2018-09-25 | 2022-05-27 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| JP7241514B2 (ja) * | 2018-11-21 | 2023-03-17 | 住友化学株式会社 | 着色組成物、着色硬化性樹脂組成物、カラーフィルタ及び表示装置 |
| WO2020158337A1 (ja) | 2019-01-28 | 2020-08-06 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| JP7579066B2 (ja) | 2019-04-25 | 2024-11-07 | 住友化学株式会社 | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
| WO2021106535A1 (ja) * | 2019-11-29 | 2021-06-03 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、パターン形成方法、及び、電子デバイスの製造方法 |
| KR20240024053A (ko) * | 2021-06-22 | 2024-02-23 | 제이에스알 가부시끼가이샤 | 감방사선성 수지 조성물, 레지스트 패턴 형성 방법 및 화합물 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN121378176A (zh) * | 2025-07-31 | 2026-01-23 | 信越化学工业株式会社 | 鎓盐、光酸产生剂、化学增幅抗蚀剂组成物及图案形成方法 |
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| EP4455787A1 (en) | 2024-10-30 |
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