CN118380500B - Ferroelectric reinforced gallium arsenide-based heterojunction photoelectric detector and preparation method thereof - Google Patents
Ferroelectric reinforced gallium arsenide-based heterojunction photoelectric detector and preparation method thereof Download PDFInfo
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Abstract
The invention relates to the field of semiconductor devices, in particular to a ferroelectric reinforced gallium arsenide-based heterojunction photoelectric detector and a preparation method thereof, wherein the ferroelectric reinforced gallium arsenide-based heterojunction photoelectric detector comprises a substrate layer, a lower electrode layer, a semiconductor layer, a ferroelectric functional layer and an upper electrode layer, wherein the lower electrode layer is arranged on one side of the substrate layer; conversely, the photocurrent of the photodetector is in an off state. The photoelectric detector can realize on/off state switching of the device by controlling the polarization state of the ferroelectric functional layer, and can adjust the photoelectric performance of the device under different polarization states, thereby realizing flexible control and optimization of the photoelectric detector.
Description
Technical Field
The invention relates to the field of semiconductor devices, in particular to a ferroelectric reinforced gallium arsenide-based heterojunction photoelectric detector and a preparation method thereof.
Background
Ferroelectric materials such as conventional ferroelectric copolymers [ P (VDF-TrFE) ], new HfO 2 -based ferroelectric materials and van der waals ferroelectric materials (VDW FEs), which are capable of generating ferroelectric polarization under the action of an electric field and maintaining polarization characteristics after the electric field has disappeared. Bipolar ferroelectricity has led to its widespread use in numerous fields, such as memristors based on HfO 2 -based ferroelectric materials, ferroelectric memories, ferroelectric transistors, ferroelectric photodetectors, and the like.
On the other hand, while silicon materials are still the most important semiconductor materials in the electronic information industry today, with the development of moore's law, the silicon-based device process is approaching the physical limit of silicon atoms, the enhanced short channel effect and gate leakage cause the on-off ratio of devices to decrease and the heat consumption of switches to increase seriously hamper the continued development of silicon-based devices, while GaAs as a group III-IV semiconductor has electron mobility approaching 8500cm 2/VS at room temperature, and a suitable forbidden band width (1.42 eV) causes it to have good temperature stability up to 720K, which is considered as a very promising second generation semiconductor material. The 2D material/GaAs-based heterojunction device is one of the main directions of current research, the 2D material is mainly selected from transition metal chalcogenide TMDs represented by MoS 2, and a single-layer MoS 2/GaAs heterojunction photodiode is taken as an example, and the heterojunction energy band is bent, so that under illumination, photo-generated electrons flow from MoS 2 to GaAs, and photo-generated holes generated by GaAs flow to MoS 2, so as to realize a self-driven photodiode without bias voltage. The structure of the heterojunction photodiode can integrate the light absorption spectrum of MoS 2 and GaAs, widens the detection range, and has shorter response time generally at the mu s level.
However, gaAs based diodes are significantly weaker in functionality than transistor type photodetectors with switching characteristics for gate voltage control, thus limiting their use scenarios, and on the other hand, the interface of GaAs and MoS 2 is still to be further optimized to reduce off-state current and increase detection rate.
Disclosure of Invention
In view of the above, the invention provides a ferroelectric reinforced gallium arsenide-based heterojunction photoelectric detector and a preparation method thereof, so as to solve the problems of weak functionality and high off-state current of a gallium arsenide-based photodiode in the prior art, thereby influencing the detection rate.
The technical scheme of the invention is realized as follows:
The invention provides a ferroelectric reinforced gallium arsenide-based heterojunction photoelectric detector, which comprises a substrate layer, a lower electrode layer, a semiconductor layer, a ferroelectric functional layer and an upper electrode layer,
The lower electrode layer is positioned on one side of the substrate layer,
The semiconductor layer and the upper electrode layer are sequentially arranged on one side of the substrate layer far away from the lower electrode layer from bottom to top,
The ferroelectric functional layer is positioned on one side of the upper electrode layer far away from the semiconductor layer or between the substrate layer and the semiconductor layer, the polarization direction of the ferroelectric functional layer is controlled by applying external voltage, and when the ferroelectric electric field generated by the polarization of the ferroelectric functional layer is consistent with the direction of the built-in electric field, the photoelectric detector is in an on state; when the ferroelectric electric field generated by the polarization of the ferroelectric functional layer is opposite to the direction of the built-in electric field, the photodetector is in an off state.
On the basis of the above technical solution, preferably, the material of the ferroelectric functional layer includes P (VDF-TrFE) or VDW ferroelectric material.
On the basis of the above technical solution, preferably, the VDW ferroelectric material includes any one of CuInP 2S6、In2Se3, snS, and SnSe.
On the basis of the above technical solution, preferably, the material of the substrate layer is gallium arsenide, the material of the semiconductor layer is MoS 2, the material of the upper electrode layer is any one of Au, pt, ti and Ag, and the material of the lower electrode layer is any one of Cr, au, ti and Pt.
On the basis of the technical scheme, preferably, the thickness of the lower electrode layer is 90-110 nm, the thickness of the ferroelectric functional layer is 2-5 nm, the thickness of the semiconductor layer is 6-30 nm, and the thickness of the upper electrode layer is 90-110 nm.
On the basis of the above technical solution, preferably, when the ferroelectric functional layer is located on a side of the upper electrode layer away from the semiconductor layer, the photodetector further includes a top electrode layer, the top electrode layer is located on a side of the ferroelectric functional layer away from the upper electrode layer, and the material of the top electrode layer includes Al or ITO.
On the basis of the above technical solution, preferably, when the ferroelectric functional layer is located between the substrate layer and the semiconductor layer, the photodetector further includes an antioxidation layer, the antioxidation layer is located on a side of the upper electrode layer away from the semiconductor layer, and the material of the antioxidation layer includes Al 2O3 or PMMA.
The invention provides a preparation method of a ferroelectric reinforced gallium arsenide-based heterojunction photoelectric detector, which comprises the following steps:
S1, preprocessing a substrate layer, and preparing a lower electrode layer on one side of the substrate layer, wherein the preparation method of the lower electrode layer comprises any one of an electron beam evaporation method, a thermal evaporation method and a magnetron sputtering method;
S2, preparing a semiconductor layer on one side of the substrate layer far away from the lower electrode layer, wherein the preparation method of the semiconductor layer is a mechanical stripping method or a wet transfer method;
S3, carrying out electron beam lithography on the surface of one side of the semiconductor layer far away from the substrate layer, reserving a photosensitive area in the center of the upper electrode pattern, and preparing an upper electrode layer in the upper electrode pattern area, wherein the upper electrode layer preparation method comprises any one of an electron beam evaporation method, a thermal evaporation method and a magnetron sputtering method;
s4, preparing a ferroelectric functional layer on the surface of one side, far away from the semiconductor layer, of the upper electrode layer, photoetching a top electrode pattern on the surface of the ferroelectric functional layer through electron beams, and depositing a top electrode to obtain the photoelectric detector.
On the basis of the above technical solution, preferably, the preparation method of the ferroelectric functional layer in step S4 includes the following steps:
And diluting the ferroelectric functional layer material in diethyl carbonate, spin-coating the ferroelectric functional layer material on the surface of the upper electrode layer, and annealing for 3.5-4.5 hours at the temperature of 100-140 ℃ to form the ferroelectric functional layer, wherein the ferroelectric functional layer material accounts for 2-3% wt of the diethyl carbonate.
The invention provides a preparation method of a ferroelectric reinforced gallium arsenide-based heterojunction photoelectric detector, which comprises the following steps:
S1, preprocessing a substrate layer, and preparing a lower electrode layer on one side of the substrate layer, wherein the preparation method of the lower electrode layer comprises any one of an electron beam evaporation method, a thermal evaporation method and a magnetron sputtering method;
S2, preparing a ferroelectric functional layer on one side of the substrate layer far away from the lower electrode layer, wherein the ferroelectric functional layer is prepared by a mechanical stripping method or a wet transfer method;
S3, preparing a semiconductor layer on one side of the ferroelectric functional layer far away from the substrate layer, wherein the preparation method of the semiconductor layer is a mechanical stripping method or a wet transfer method;
S4, carrying out electron beam lithography on the surface of one side of the semiconductor layer far away from the ferroelectric functional layer, reserving a photosensitive area in the center of the upper electrode pattern, and preparing an upper electrode layer in the upper electrode pattern area, wherein the upper electrode layer preparation method comprises any one of an electron beam evaporation method, a thermal evaporation method and a magnetron sputtering method;
s5, preparing an antioxidation layer on the surface of one side of the upper electrode layer, which is far away from the semiconductor layer, so as to obtain the photoelectric detector.
Compared with the prior art, the ferroelectric enhanced gallium arsenide-based heterojunction photoelectric detector and the preparation method thereof have the following beneficial effects:
(1) Compared with the existing GaAs/MoS 2 heterojunction photodiode, the novel structure provided by the invention can combine the polarization characteristic of the ferroelectric material into heterojunction carrier regulation and control to realize current inhibition and amplification, namely realize the switching characteristic, namely realize on-state/off-state switching of the device by controlling the polarization state of the ferroelectric functional layer, regulate the photoelectric performance of the device under different polarization states, and realize flexible control and optimization of the photoelectric detector;
(2) The ferroelectric functional layer is positioned on one side of the upper electrode layer far away from the semiconductor layer, and can be used as a covering layer to cover the surface of the device, so that the adhesion of impurity molecules such as H 2O、O2 in air is effectively isolated, the surface defect density of the device is reduced, the generation of off-state current is reduced, and the detection rate is improved; meanwhile, the top electrode is covered on one side of the ferroelectric functional layer far away from the upper electrode layer, can play a role in isolating molecules such as air, moisture, oxygen and the like together with the ferroelectric functional layer, is beneficial to improving the stability of the device, preventing the influence of external environmental factors on the performance of the device and prolonging the service life of the device;
(3) By arranging the ferroelectric functional layer between the substrate layer and the semiconductor layer, the ferroelectric polarization field is regulated by the upper electrode and the lower electrode, and a top electrode is not required to be added; the ferroelectric functional layer can also be used as a thin interface layer to directly contact the semiconductor layer, so that the interface quality between the gallium arsenide-based substrate and the semiconductor layer is improved, the influence of interface defects and surface states is reduced, and the performance and stability of the device are improved; in the absence of light, charge transfer between the substrate and the semiconductor can be suppressed due to the presence of the ferroelectric functional layer, thereby reducing dark current and improving the detection rate.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of the preparation of a GaAs-based heterojunction photodetector of embodiment 1 of the present invention;
FIG. 2 is a flow chart of the preparation of a GaAs-based heterojunction photodetector of embodiment 2 of the present invention;
FIG. 3 is a band diagram of a GaAs-based heterojunction photodiode of comparative example 1 of the present invention under illumination;
FIG. 4 is a band diagram of the GaAs-based heterojunction photodetector of embodiment 1 of the present invention when illuminated;
FIG. 5 is a band diagram of the GaAs-based heterojunction photodetector of embodiment 2 of the present invention when illuminated;
FIG. 6 is an I-V plot of gallium arsenide-based heterojunction photodetectors of examples 2, 3 and comparative example 1 of the present invention;
FIG. 7 is a diagram showing the working states of the GaAs-based heterojunction photoelectric detector of embodiment 2 of the present invention under different illumination powers;
Fig. 8 is a diagram showing the working states of gaas heterojunction photodetectors according to embodiments 4 and 5 of the present invention under different illumination powers.
Detailed Description
The following description of the embodiments of the present invention will clearly and fully describe the technical aspects of the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, are intended to fall within the scope of the present invention.
The invention provides a ferroelectric reinforced gallium arsenide-based heterojunction photoelectric detector, which comprises a substrate layer, a lower electrode layer, a semiconductor layer, a ferroelectric functional layer and an upper electrode layer,
The lower electrode layer is positioned on one side of the substrate layer,
The semiconductor layer and the upper electrode layer are sequentially arranged on one side of the substrate layer far away from the lower electrode layer from bottom to top,
The ferroelectric functional layer is positioned on one side of the upper electrode layer far away from the semiconductor layer or between the substrate layer and the semiconductor layer, the polarization direction of the ferroelectric functional layer is controlled by applying external voltage, and when the ferroelectric electric field generated by the polarization of the ferroelectric functional layer is consistent with the direction of the built-in electric field, the photocurrent of the photoelectric detector is in an on state; when the ferroelectric electric field generated by the polarization of the ferroelectric functional layer is opposite to the direction of the built-in electric field, the photocurrent of the photodetector is in an off state.
Further, the material of the substrate layer is gallium arsenide, and the material of the semiconductor layer is MoS 2. The substrate serves as a base of the entire device, providing support and stability; the lower electrode layer and the upper electrode layer are used for providing electron injection and current extraction; the semiconductor layer is positioned on one side of the substrate layer away from the lower electrode layer and is used for photoelectric conversion and electron transmission. The ferroelectric material is introduced into the structure to play two roles, namely, the ferroelectric functional layer can be used as a covering layer to cover the surface of the device, so that the adhesion of impurity molecules such as H 2O、O2 in the air is effectively isolated, the surface defect density of the device is reduced, the generation of off-state current is reduced, and the detection rate is improved; meanwhile, the ferroelectric functional layer can also be used as a thin interface layer to directly contact the semiconductor layer, so that the interface quality between the gallium arsenide-based substrate and the semiconductor layer is improved, the influence of interface defects and surface states is reduced, and the performance and stability of the device are improved. Secondly, the ferroelectric functional layer has two different polarization states, when the polarization direction is changed, the direction and the intensity of a ferroelectric electric field generated by the ferroelectric functional layer can be changed, so that the electric field distribution inside the device is affected, the change of the internal electric field can regulate and control the carrier transportation process in the device, and further influence the diffusion and drift behaviors of the carrier, and the on-state/off-state switching of the device can be realized by controlling the polarization state of the ferroelectric functional layer, namely, the photoelectric performance of the device is regulated under different polarization states, so that the flexible control and optimization of the photoelectric detector are realized.
Still further preferably, the ferroelectric functional layer is located between the substrate layer and the semiconductor layer. The ferroelectric function layer is arranged between the substrate layer and the semiconductor layer, and a polarized electric field generated by ferroelectric polarization is similar to a built-in electric field of the heterojunction in space, so that compared with the ferroelectric function layer arranged on the upper electrode layer, the ferroelectric polarized field switching effect is more remarkable; meanwhile, the GaAs substrate has active chemical properties, interface problems are easy to generate, and the ferroelectric functional layer directly contacted with GaAs can play a role in passivating the interface, so that the device performance is improved.
On the basis of the above technical solution, preferably, the material of the ferroelectric functional layer includes P (VDF-TrFE) or VDW ferroelectric material.
On the basis of the above technical solution, preferably, the VDW ferroelectric material includes any one of CuInP 2S6、In2Se3, snS, and SnSe.
Still further, when the ferroelectric functional layer is located on the side of the upper electrode layer away from the semiconductor layer, the material of the ferroelectric functional layer may be P (VDF-TrFE) or VDW ferroelectric material, preferably P (VDF-TrFE); when the ferroelectric functional layer is located between the substrate layer and the semiconductor layer, the material of the ferroelectric functional layer may be P (VDF-TrFE) or a VDW ferroelectric material, preferably a VDW ferroelectric material.
P (VDF-TrFE) is a copolymer obtained by the functional copolymerization of two monomers of ethylene fluoride (VDF) and ethylene trifluoride (TrFE), and has ferroelectric property, namely, under the action of an external electric field, dipole moment in molecules can be rearranged to form ferroelectric domains, and the inversion of polarization direction can be realized. When the ferroelectric functional layer is positioned on one side of the upper electrode layer far away from the semiconductor layer, P (VDF-TrFE) is selected as the ferroelectric functional layer, so that the ferroelectric functional layer has excellent ferroelectric property and higher ferroelectric domain polarization, and can realize larger polarization inversion under the action of an electric field, thereby realizing the switching function of the device; meanwhile, P (VDF-TrFE) is used as a polymer material, has good gas isolation performance, can effectively prevent gases such as H 2O、O2 in air from penetrating into the device, and reduces adsorption and adhesion of gas molecules on the surface of the device, so that off-state current is reduced.
VDW ferroelectric materials, i.e., van der Waals ferroelectric materials, are a class of materials with ferroelectric properties that are characterized by van der Waals interactions in the crystal structure such that weak interactions exist between the layers of the material. When the ferroelectric functional layer is positioned between the semiconductor layers, the substrate layer is preferably a VDW ferroelectric material, on one hand, the VDW ferroelectric material has the characteristic of ultra-thin thickness, so that the energy band structure of the GaAs/MoS 2 heterojunction can not be influenced when the ferroelectric functional layer is used as the ferroelectric functional layer in the device, the self-driving characteristic of the built-in electric field of the heterojunction is reserved, and the performance of the device is improved; meanwhile, the ultrathin thickness is also beneficial to the integrated design of the device, so that the whole size of the device is smaller, and the power consumption is lower. On the other hand, compared with traditional ferroelectric materials such as PVDF, the Van der Waals interface formed between the VDW ferroelectric material and the substrate material is cleaner and more lossless, the existence of interface trap states is effectively reduced, and the clean interface is beneficial to improving the performance stability and reliability of the device. In addition, the VDW ferroelectric material provides a platform with good expansibility, is similar to two-dimensional materials such as graphene, moS 2、WSe2、MoTe2 and the like, can be assembled in a stacking mode of VDW keys, is convenient to realize expansion and customization of functions just like building blocks, and has higher flexibility and innovation in device design and function expansion.
On the basis of the above technical solution, preferably, the material of the substrate layer is gallium arsenide, the material of the semiconductor layer is MoS 2, the material of the upper electrode layer is any one of Au, pt, ti and Ag, and the material of the lower electrode layer is any one of Cr, au, ti and Pt.
On the basis of the technical scheme, preferably, the thickness of the lower electrode layer is 90-110 nm, the thickness of the ferroelectric functional layer is 2-5 nm, the thickness of the semiconductor layer is 6-30 nm, and the thickness of the upper electrode layer is 90-110 nm.
In the GaAs/MoS 2 heterojunction, the thickness of the ferroelectric functional layer has an important effect on device performance. When the ferroelectric functional layer is too thick, the energy band structure at the GaAs/MoS 2 interface is greatly influenced by the ferroelectric layer, and the built-in electric field generated by the GaAs/MoS 2 heterojunction disappears, so that the device loses the self-driving characteristic, and thus the functions of zero bias photoelectric detection and the like cannot be realized. However, when the ferroelectric functional layer is too thin and approaches to a single-layer atomic structure, the ferroelectric functional layer cannot be effectively polarized, that is, cannot generate enough polarization strength under the action of an electric field, which results in that the ferroelectric functional layer cannot realize an effective switching function, because the polarization of the ferroelectric material is controlled by an applied electric field, and the too thin ferroelectric functional layer cannot provide enough polarization strength to realize the switching function of the device.
On the basis of the above technical solution, preferably, when the ferroelectric functional layer is located on a side of the upper electrode layer away from the semiconductor layer, the photodetector further includes a top electrode layer, the top electrode layer is located on a side of the ferroelectric functional layer away from the upper electrode layer, and the material of the top electrode layer includes Al or ITO.
The switching function of the device can be realized by adjusting the voltage of the top electrode, thereby controlling the working state of the device. Specifically, by applying a positive voltage exceeding the coercive voltage of the ferroelectric layer between the top electrode and the upper electrode, the polarization electric field of the ferroelectric functional layer can be made downward (directed from the ferroelectric layer to the semiconductor layer), and by doing so, the polarity of the ferroelectric functional layer can be controlled to make the device take on an off state as opposed to the built-in electric field, whereas a negative voltage exceeding the coercive voltage of the ferroelectric layer is applied to take on a turned-on state. Meanwhile, the top electrode covers one side of the ferroelectric functional layer far away from the upper electrode layer, can jointly play a role in isolating molecules such as air, moisture, oxygen and the like with the ferroelectric functional layer, is beneficial to improving the stability of the device, preventing external environmental factors from affecting the performance of the device, and prolonging the service life of the device.
On the basis of the above technical solution, preferably, when the ferroelectric functional layer is located between the substrate layer and the semiconductor layer, the photodetector further includes an antioxidation layer, the antioxidation layer is located on a side of the upper electrode layer away from the semiconductor layer, and the material of the antioxidation layer includes Al 2O3 or PMMA. When the antioxidation layer is Al 2O3, the thickness of the antioxidation layer is 8-12 nm; when the antioxidation layer is PMMA, the thickness of the antioxidation layer is 900-1100 nm.
A thin ferroelectric functional layer is directly embedded between GaAs and MoS 2, and the ferroelectric polarization field is regulated by upper and lower electrodes without adding a top electrode. The polarization field generated by the ferroelectric functional layer is between GaAs and MoS 2 and is in the same area as the built-in electric field (from GaAs to MoS 2), so that the current can be controlled more obviously in a switching way. When a polarization field with the same direction as the built-in electric field is applied, the device is in an on state; when a polarization field in the opposite direction to the built-in electric field is applied, the device is in an off state, and the working state of the device can be controlled more effectively. Meanwhile, when no illumination exists, the charge transfer between GaAs and MoS 2 can be restrained due to the existence of the ferroelectric functional layer, so that dark current is reduced, the detection rate is improved, the performance of the device is improved due to the introduction of the ferroelectric functional layer, and the device can also show better performance in a dark state.
On the other hand, the invention provides a preparation method of a ferroelectric reinforced gallium arsenide-based heterojunction photoelectric detector, which comprises the following steps:
S1, preprocessing a substrate layer, and preparing a lower electrode layer on one side of the substrate layer, wherein the preparation method of the lower electrode layer comprises any one of an electron beam evaporation method, a thermal evaporation method and a magnetron sputtering method;
Specifically, the pretreatment of the substrate layer includes: sequentially oscillating and cleaning the substrate in acetone, ethanol and isopropanol solution to remove greasy dirt and particles on the surface; then soaking the substrate in a hydrochloric acid solution, and removing a natural oxide layer on the surface, wherein the concentration of the hydrochloric acid solution is 4% -6%; then, the substrate is soaked in (NH 4)2 S solution with the concentration of 6% -10%, oxide on the surface of the substrate is removed, the oxide is prevented from being oxidized again, and the effect of S passivation is achieved.
S2, preparing a semiconductor layer on one side of the substrate layer far away from the lower electrode layer, wherein the preparation method of the semiconductor layer is a mechanical stripping method or a wet transfer method;
Specifically, the mechanical peeling method includes: (1) Thinning the semiconductor body material to a single layer or a few layers by using an adhesive tape; (2) Covering the PDMS adhesive on the adhesive tape, and transferring the target single-layer or few-layer semiconductor layers to the PDMS adhesive; (3) And (4) attaching the upper surface of the substrate to the PDMS adhesive, preserving heat at 80-90 ℃ for 8-12 min, heating to weaken the viscosity of the PDMS, separating the substrate from the PDMS adhesive, and transferring the semiconductor layer onto the substrate.
The wet transfer method comprises the following steps: the method comprises the steps of (1) spin-coating PMMA onto SiO 2/semiconductor and drying the SiO 2/semiconductor at a hot plate of 140-160 ℃ for 5-10min, (2) placing a sample to be transferred of the SiO 2/semiconductor/PMMA structure into SiO 2 etching liquid (potassium hydroxide solution, hydrofluoric acid solution or buffer hydrofluoric acid solution), after the SiO 2 is etched, obtaining a semiconductor/PMMA structure floating on a liquid surface, (3) taking out the semiconductor/PMMA structure by using Si sheets and placing the semiconductor/PMMA structure into deionized water for soaking to remove residual etching liquid, transferring the Si sheets into deionized water without pollution after the removal is completed, (4) taking out the semiconductor/PMMA structure by using a substrate to form the substrate/semiconductor/PMMA structure, (5) placing the sample into a hot plate for heating to remove moisture at a temperature of 100 ℃ for 30min, and (6) cooling the sample into normal temperature, placing into acetone for soaking to remove the PMMA, thus obtaining the substrate/semiconductor structure.
S3, carrying out electron beam lithography on the surface of one side of the semiconductor layer far away from the substrate layer, reserving a photosensitive area in the center of the upper electrode pattern, and preparing an upper electrode layer in the upper electrode pattern area, wherein the upper electrode layer preparation method comprises any one of an electron beam evaporation method, a thermal evaporation method and a magnetron sputtering method;
Specifically, photoresist is spin-coated on the upper surface of the semiconductor layer, an upper electrode pattern is formed by electron beam lithography, a photosensitive area of a diode photoelectric detector is reserved in the center of the upper electrode pattern, the prepared electrode is ensured to be only contacted with the semiconductor layer but not contacted with a substrate (the contact with the substrate can cause the diode to be short-circuited), the upper electrode is optionally Au, pt, ti, ag and other metals, and the electrode can also be prepared into a metal electrode by adopting electron beam evaporation, thermal evaporation or magnetron sputtering.
S4, preparing a ferroelectric functional layer on the surface of one side, far away from the semiconductor layer, of the upper electrode layer, photoetching a top electrode pattern on the surface of the ferroelectric functional layer through electron beams, and depositing a top electrode to obtain the photoelectric detector.
On the basis of the above technical solution, preferably, the preparation method of the ferroelectric functional layer in step S4 includes the following steps:
And diluting the ferroelectric functional layer material in diethyl carbonate, spin-coating the ferroelectric functional layer material on the surface of the upper electrode layer, and annealing for 3.5-4.5 hours at the temperature of 100-140 ℃ to form the ferroelectric functional layer, wherein the ferroelectric functional layer material accounts for 2-3% wt of the diethyl carbonate.
The invention provides a preparation method of a ferroelectric reinforced gallium arsenide-based heterojunction photoelectric detector, which comprises the following steps:
S1, preprocessing a substrate layer, and preparing a lower electrode layer on one side of the substrate layer, wherein the preparation method of the lower electrode layer comprises any one of an electron beam evaporation method, a thermal evaporation method and a magnetron sputtering method;
S2, preparing a ferroelectric functional layer on one side of the substrate layer far away from the lower electrode layer, wherein the ferroelectric functional layer is prepared by a mechanical stripping method or a wet transfer method;
S3, preparing a semiconductor layer on one side of the ferroelectric functional layer far away from the substrate layer, wherein the preparation method of the semiconductor layer is a mechanical stripping method or a wet transfer method;
S4, carrying out electron beam lithography on the surface of one side of the semiconductor layer far away from the ferroelectric functional layer, reserving a photosensitive area in the center of the upper electrode pattern, and preparing an upper electrode layer in the upper electrode pattern area, wherein the upper electrode layer preparation method comprises any one of an electron beam evaporation method, a thermal evaporation method and a magnetron sputtering method;
s5, preparing an antioxidation layer on the surface of one side of the upper electrode layer, which is far away from the semiconductor layer, so as to obtain the photoelectric detector.
The technical scheme of the invention is further described by the following examples.
Example 1
The embodiment provides a ferroelectric reinforced gallium arsenide-based heterojunction photoelectric detector and a preparation method thereof, wherein the specific structure of the photoelectric detector from bottom to top is a lower electrode, a GaAs substrate (n-type heavy doping), a MoS 2, an upper electrode, a ferroelectric functional layer and a top electrode, namely Au/GaAs/MoS 2/Au/P (VDF-TrFE)/ITO, wherein the Au/GaAs/MoS 2/Au structure of the first half part is a main body part of a diode, and the part of Au/P (VDF-TrFE)/ITO realizes polarization and polarity switching of ferroelectric material P (VDF-TrFE). The specific preparation process is as follows (as shown in figure 1):
S1, cleaning GaAs, namely (1) firstly flushing with ionized water, then sequentially placing the GaAs substrate in acetone, ethanol and isopropanol, and respectively cleaning 5 min by ultrasonic oscillation to remove greasy dirt and particles on the surface. (2) washing with deionized water for 5 times, and washing off residual solution. (3) And immersing the GaAs substrate in 5% hydrochloric acid solution for 5 min%, and removing the natural oxide layer on the surface. (4) washing with deionized water for 5 times, and washing off residual solution. (5) Soaking GaAs substrate 40 min with 8% (NH 4)2 S solution at room temperature to remove the oxide on the GaAs surface and avoid reoxidation, so as to achieve S passivation effect, (6) washing with deionized water for 5 times, and drying with nitrogen for later use.
S2, preparing a lower electrode, wherein the electrode material is Au, the preparation method is that the electrode is prepared by a thermal evaporation process, the vacuum degree is 4 multiplied by 10 - 4 Pa, the current is 30-50A, the deposition rate is 0.01-0.03nm/S, and the thickness is 100nm.
S3, moS 2 is transferred to the upper surface of the cleaned GaAs substrate, the thickness of MoS 2 is 15nm, the transfer method can adopt a mechanical stripping method or wet transfer method, A: the mechanical stripping method comprises the following steps: (1) Thinning MoS 2 body material to a single layer or a few layers by using an adhesive tape; (2) Covering the PDMS adhesive on the adhesive tape, and transferring the target single-layer or less-layer MoS 2 to the PDMS adhesive; (3) And (4) attaching the upper surface of the GaAs substrate to the PDMS adhesive, preserving heat at 85 ℃ for 10min, heating to weaken the viscosity of the PDMS, separating the GaAs substrate from the PDMS adhesive, and transferring MoS2 to the GaAs substrate. B: the wet transfer is as follows: the two-dimensional material generally used for preparing by Chemical Vapor Deposition (CVD) and other methods is generally SiO 2 as a substrate, the structure is SiO 2/MoS2 in the example, the wet transfer step is (1) spin-coating PMMA onto SiO 2/MoS2 and hot plate drying at 150 ℃ for 5-10min, (2) Placing a sample to be transferred of the SiO 2/MoS2/PMMA structure into SiO 2 etching solution (potassium hydroxide solution), after SiO 2 is etched, obtaining a MoS 2/PMMA structure floating on the liquid surface, (3) The MoS 2/PMMA structure is fished out by a Si sheet and is placed in deionized water to soak and remove residual etching liquid, after the removal, the Si sheet is transferred to the pollution-free deionized water, the MoS 2/PMMA structure is fished out by a GaAs substrate to form a GaAs/MoS 2/PMMA structure, (5) And (3) heating the sample in a hot plate to remove water at the temperature of 100 ℃ for 30min, cooling the sample to normal temperature, soaking in acetone, and removing PMMA to obtain the GaAs/MoS 2 structure.
S4, spin-coating photoresist on MoS 2, carrying out electron beam lithography to obtain an upper electrode pattern, leaving a photosensitive area of a diode photoelectric detector in the center of the upper electrode pattern, ensuring that the prepared electrode only contacts MoS 2 but cannot contact a GaAs substrate (the contact of the GaAs substrate can cause the diode to be short-circuited), selecting Au for the upper electrode, preparing a metal electrode by adopting a thermal evaporation process, wherein the vacuum degree is 4 multiplied by 10 -4 pa, the current is 30-50A, the deposition rate is 0.01-0.03nm/S, and the thickness is 100nm.
Preparing and obtaining an Au/GaAs/MoS2/Au photodiode with a general structure through S1-S4, and subsequently preparing a ferroelectric functional layer;
S5, powder of P (VDF-TrFE) solution (P (VDF-TrFE) (70:30 mol%) is diluted in diethyl carbonate according to a mass ratio of 2.5%wt), spin-coated on the surface of Au/GaAs/MoS 2/Au structure, and annealed at 100-140 ℃ for 4 hours to form a ferroelectric functional layer with a thickness of 3nm.
S6, photoetching a top electrode pattern by using an electron beam, depositing a top electrode, wherein the top electrode layer is made of a conductive material with good light transmittance, and in the embodiment, ITO is used, and the thickness is 10nm. Wherein the electron beam lithography step comprises: spin-coating MMA on the sample, rotating at 3000 r/s, for 30s, and baking at 150 ℃ for 1min; spin-coating PMMA,3000 r/s, 30s, and baking at 150deg.C for 5min; aligning the sample and the exposure pattern (photosensitive window pattern) positions in a scanning electron microscope; setting a current of 0.1-0.2A, and exposing for about 1min; developing with IPA mixed solution with MIBK=3:1 for 15s-60s; preparing an electrode; acetone soaking, stripping the residual photoresist and carrying away the unwanted electrodes.
Example 2
The embodiment provides a ferroelectric enhanced gallium arsenide-based heterojunction photoelectric detector and a preparation method thereof, wherein a P (VDF-TrFE) ferroelectric layer is replaced by a VDW ferroelectric material with ultra-thin thickness, and the VDW ferroelectric material is arranged between GaAs and MoS 2, namely, a lower electrode, a GaAs substrate, a ferroelectric functional layer, moS 2 and an upper electrode are formed, namely, au/GaAs/VDW ferro/MoS 2/Au. The specific preparation flow is as follows (as shown in figure 2):
S1, preprocessing a GaAs substrate, wherein the preprocessing process is the same as that of the step S1 of the embodiment 1;
s2, preparing a lower electrode on one side of the GaAs substrate, wherein the thickness of the lower electrode layer is 100nm, and the preparation method is the same as that in step S2 of the embodiment 1;
S3, transferring a VDW ferroelectric functional layer, wherein the VDW ferroelectric film is between MoS 2 and GaAs, the thickness is 3nm, and the specific material is CuInP 2S6. The ferroelectric functional layer of a desired thickness can be obtained by a mechanical lift-off process on the bulk material, the mechanical lift-off process specifically comprising: the tweezers initially peel the thin layer CuInP 2Se6 from the bulk material; placing the thin layer on the adhesive tape, and further thinning the thin layer to the required thickness through adhesive tape attaching and pulling; attaching the adhesive tape with CuInP 2Se6 to the PDMS adhesive to transfer the material to the PDMS adhesive; and (3) attaching PDMS glue to the GaAs surface, and preserving the temperature at 80 ℃ for 10-20min to release heat of the PDMS CuInP 2Se6, so that the sample is transferred to the GaAs surface.
S4, preparing MoS 2,MoS2 with the thickness of 15nm on the upper surface of the ferroelectric functional layer by adopting a wet transfer method, wherein the preparation method is the same as that in step S3 of the embodiment 1;
s5, preparing an upper electrode layer on the upper surface of MoS 2, wherein the thickness of the upper electrode layer is 100nm, and the preparation method is the same as that in step S4 of the embodiment 1.
Example 3
The embodiment provides a ferroelectric reinforced gallium arsenide-based heterojunction photoelectric detector and a preparation method thereof, the specific structure of the photoelectric detector is Au/GaAs/VDW ferro/MoS 2/Au/Al2O3, and the preparation method is the same as that of embodiment 2, and the difference is that: an antioxidation layer Al 2O3 is added on the upper surface of the upper electrode layer, the antioxidation layer is prepared by adopting an atomic layer deposition method, wherein an aluminum source is as follows: trimethylaluminum, water source: deionized water, 0.1 nm/cycle, 100 cycles deposited 10nm Al 2O3.
Example 4
The embodiment provides a ferroelectric reinforced gallium arsenide-based heterojunction photoelectric detector and a preparation method thereof, and the specific structure and the preparation method of the photoelectric detector are the same as those of embodiment 3, and the difference is that: the ferroelectric functional layer has a thickness of 1nm.
Example 5
The embodiment provides a ferroelectric reinforced gallium arsenide-based heterojunction photoelectric detector and a preparation method thereof, and the specific structure and the preparation method of the photoelectric detector are the same as those of embodiment 3, and the difference is that: the ferroelectric functional layer has a thickness of 10nm.
Comparative example 1
The comparative example provides a gallium arsenide-based heterojunction photodiode and a preparation method thereof, wherein the specific structure of the photodiode is Au/GaAs/MoS 2/Au, and the specific preparation method is the same as steps S1-S4 in the embodiment 1.
The device obtained in the embodiment and the comparative example is applied with proper bias pulse to polarize the ferroelectric functional layer to make the device in different working states (namely, an initial state without polarization, an on state with upward polarization and an off state with downward polarization), then the device is irradiated by a light source to change the light intensity and wavelength of the light source, the energy band diagram under the illumination is combined, and the dark current of the photoelectric detector and the current-voltage characteristic curves under different working states are recorded by a test instrument. The detection results are shown in FIGS. 3-8.
Fig. 3 shows the energy band diagram of the GaAs-based heterojunction photodiode prepared in comparative example 1 under light, in which the left side is MoS 2 energy band (MoS 2 single-layer energy band 1.8 eV), the right side is GaAs energy band, before GaAs is contacted with MoS 2, the fermi level (E F-GA) in GaAs is higher than the fermi level (E F-MS) of MoS 2, so that after contact, majority carrier electrons in GaAs flow to MoS 2 and cause the GaAs energy band to bend upward, and after reaching an equilibrium state, a potential barrier (W GA-WMS) with a height of the difference between GaAs and MoS 2 work functions is formed on the GaAs side, and a built-in electric field is formed, the direction of which is directed from GaAs to MoS 2; when illumination is carried out, moS 2 and GaAs absorb photons and generate photo-generated electrons and photo-generated holes, under the action of a built-in electric field, the photo-generated electrons flow from MoS 2 to GaAs, and the photo-generated holes flow from GaAs to MoS 2, so that photo-generated current is formed.
Fig. 4 shows an energy band diagram of the gallium arsenide-based heterojunction photoelectric detector prepared in example 1 when light is applied, negative pressure pulse larger than coercive voltage of P (VDF-TrFE) is applied between the top electrode ITO and the Au upper electrode, so that the ferroelectric layer is polarized upwards (GaAs to MoS 2), after the voltage is removed, the direction of a ferroelectric polarization electric field generated by residual polarization is consistent with the direction of a built-in electric field, so that photo-generated carrier drift current is increased together, and the photocurrent of the device is increased compared with GaAs/MoS 2 heterojunction, and the device is in an on state; by applying positive voltage pulse with coercive voltage larger than P (VDF-TrFE) between the top electrode ITO and the Au upper electrode, after the voltage is removed, the ferroelectric polarization electric field generated by residual polarization has opposite direction to the built-in electric field, the ferroelectric polarization field can reduce photo-generated carrier drift current, and the photocurrent of the device is reduced compared with GaAs/MoS 2 heterojunction and is in an off state.
Fig. 5 shows the energy band diagram of the gallium arsenide-based heterojunction photodetector fabricated in example 2 when illuminated, as can be seen, a thin ferroelectric layer is directly embedded between GaAs and MoS 2, the ferroelectric polarization field (E FE) is modulated by the upper and lower electrodes, without adding a top electrode, and the ferroelectric layer that produces E FE is between GaAs and MoS 2, The current switching effect is more obvious when the current is in the same area as the built-in electric field (GaAs points to MoS 2). The same E FE is on in the same direction as E in and off in the opposite direction, specifically, cuInP 2Se6 is polarized upward (from GaAs to MoS 2) by applying a negative pressure pulse to the upper electrode Au, After the voltage is removed, the remnant polarization of the ferroelectric layer produces a ferroelectric polarization electric field EF E in the same direction as the built-in electric field (E in), which together increases the photo-generated carrier drift current, increases the device photocurrent compared to GaAs/MoS 2 heterojunction, An on state is presented; Conversely, positive voltage pulse is applied to the upper electrode Au to polarize CuInP 2Se6 downwards (directed to GaAs by MoS 2), after the voltage is removed, the remnant polarization of the ferroelectric layer generates a ferroelectric polarized electric field EFE opposite to the built-in electric field E in, At this time, EFE can reduce photo-generated carrier drift current, and the photocurrent of the device is reduced compared with GaAs/MoS 2 heterojunction, and the device is in an off state. in the absence of light, charge transfer between GaAs and MoS 2 is suppressed due to the presence of the ferroelectric layer, which also reduces dark current and improves detection rate.
Fig. 6 is an I-V characteristic curve of the comparative example, example 2 and example 3 in the dark state, the example 2 has a lower dark state current than the comparative example 3, and the example 3 has a lower current than the example 2, mainly because the VDW ferroelectric material layer in the example 2 plays a role of lowering dark current compared to the GaAs/MoS 2 structure of the comparative example, further, the oxidation-resistant layer of Al 2O3 is added in the example 3, so that the MoS 2 channel material is protected, oxygen and moisture are isolated, and lower dark current is obtained.
FIG. 7 shows three operating states of example 2 under different illumination powers when the ferroelectric layer is in a non-polar state, photocurrent is provided by the separation of photo-generated carriers by the built-in electric field, and when the ferroelectric layer is polarized upwards, the ferroelectric field and the built-in electric field have the same direction, the device is turned on, and the current increases; whereas the device assumes an off state and the current decreases.
Fig. 8 shows three operating states of example 4 and example 5 under different illumination powers when the bias voltage is 0, and the switching state of example 4 is not obvious compared with example 2, mainly because the thickness of the ferroelectric layer in example 4 is too low to provide enough ferroelectric polarization electric field, so that the ferroelectric layer fails; while the overall current is smaller in example 5, mainly because the too thick ferroelectric layer between GaAs and MoS 2 causes the self-driven built-in electric field to vanish and not obtain an effective photo-generated current at 0 bias.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, alternatives, and improvements that fall within the spirit and scope of the invention.
Claims (8)
1. A ferroelectric-enhanced gallium arsenide-based heterojunction photodetector, characterized by: comprises a substrate layer, a lower electrode layer, a semiconductor layer, a ferroelectric functional layer and an upper electrode layer,
The lower electrode layer is positioned on one side of the substrate layer,
The semiconductor layer and the upper electrode layer are sequentially arranged on one side of the substrate layer far away from the lower electrode layer from bottom to top,
The ferroelectric functional layer is positioned on one side of the upper electrode layer far away from the semiconductor layer or between the substrate layer and the semiconductor layer, the polarization direction of the ferroelectric functional layer is controlled by applying external voltage, and when the ferroelectric electric field generated by the polarization of the ferroelectric functional layer is consistent with the direction of the built-in electric field, the photoelectric detector is in an on state; when the ferroelectric electric field generated by the polarization of the ferroelectric functional layer is opposite to the direction of the built-in electric field, the photoelectric detector is in an off state;
The material of the substrate layer is gallium arsenide;
the ferroelectric functional layer material comprises P (VDF-TrFE) or VDW ferroelectric material;
The thickness of the lower electrode layer is 90-110 nm, the thickness of the ferroelectric functional layer is 2-5 nm, the thickness of the semiconductor layer is 6-30 nm, and the thickness of the upper electrode layer is 90-110 nm.
2. A ferroelectric enhanced gallium arsenide-based heterojunction photodetector according to claim 1, wherein: the VDW ferroelectric material comprises any one of CuInP 2S6、In2Se3, snS and SnSe.
3. A ferroelectric enhanced gallium arsenide-based heterojunction photodetector according to claim 1, wherein: the semiconductor layer is made of MoS 2, the upper electrode layer is made of any one of Au, pt, ti and Ag, and the lower electrode layer is made of any one of Cr, au, ti and Pt.
4. A ferroelectric enhanced gallium arsenide-based heterojunction photodetector as claimed in any one of claims 1 to 3, wherein: when the ferroelectric functional layer is positioned on one side of the upper electrode layer far away from the semiconductor layer, the photoelectric detector further comprises a top electrode layer, the top electrode layer is positioned on one side of the ferroelectric functional layer far away from the upper electrode layer, and the material of the top electrode layer comprises Al or ITO.
5. A ferroelectric enhanced gallium arsenide-based heterojunction photodetector as claimed in any one of claims 1 to 3, wherein: when the ferroelectric functional layer is positioned between the substrate layer and the semiconductor layer, the photoelectric detector further comprises an oxidation resistant layer, the oxidation resistant layer is positioned on one side of the upper electrode layer away from the semiconductor layer, and the material of the oxidation resistant layer comprises Al 2O3 or PMMA.
6. The method for fabricating a ferroelectric enhanced gallium arsenide-based heterojunction photodetector as defined in claim 4, wherein: the method comprises the following steps:
S1, preprocessing a substrate layer, and preparing a lower electrode layer on one side of the substrate layer, wherein the preparation method of the lower electrode layer comprises any one of an electron beam evaporation method, a thermal evaporation method and a magnetron sputtering method;
S2, preparing a semiconductor layer on one side of the substrate layer far away from the lower electrode layer, wherein the preparation method of the semiconductor layer is a mechanical stripping method or a wet transfer method;
S3, carrying out electron beam lithography on the surface of one side of the semiconductor layer far away from the substrate layer, reserving a photosensitive area in the center of the upper electrode pattern, and preparing an upper electrode layer in the upper electrode pattern area, wherein the upper electrode layer preparation method comprises any one of an electron beam evaporation method, a thermal evaporation method and a magnetron sputtering method;
s4, preparing a ferroelectric functional layer on the surface of one side, far away from the semiconductor layer, of the upper electrode layer, photoetching a top electrode pattern on the surface of the ferroelectric functional layer through electron beams, and depositing a top electrode to obtain the photoelectric detector.
7. The method for fabricating a ferroelectric enhanced gallium arsenide-based heterojunction photodetector as defined in claim 6, wherein:
The preparation method of the ferroelectric functional layer in the step S4 comprises the following steps:
And diluting the ferroelectric functional layer material in diethyl carbonate, spin-coating the ferroelectric functional layer material on the surface of the upper electrode layer, and annealing for 3.5-4.5 hours at the temperature of 100-140 ℃ to form the ferroelectric functional layer, wherein the ferroelectric functional layer material accounts for 2-3% wt of the diethyl carbonate.
8. The method for fabricating a ferroelectric enhanced gallium arsenide-based heterojunction photodetector as defined in claim 5, wherein: the method comprises the following steps:
S1, preprocessing a substrate layer, and preparing a lower electrode layer on one side of the substrate layer, wherein the preparation method of the lower electrode layer comprises any one of an electron beam evaporation method, a thermal evaporation method and a magnetron sputtering method;
S2, preparing a ferroelectric functional layer on one side of the substrate layer far away from the lower electrode layer, wherein the ferroelectric functional layer is prepared by a mechanical stripping method or a wet transfer method;
S3, preparing a semiconductor layer on one side of the ferroelectric functional layer far away from the substrate layer, wherein the preparation method of the semiconductor layer is a mechanical stripping method or a wet transfer method;
S4, carrying out electron beam lithography on the surface of one side of the semiconductor layer far away from the ferroelectric functional layer, reserving a photosensitive area in the center of the upper electrode pattern, and preparing an upper electrode layer in the upper electrode pattern area, wherein the upper electrode layer preparation method comprises any one of an electron beam evaporation method, a thermal evaporation method and a magnetron sputtering method;
s5, preparing an antioxidation layer on the surface of one side of the upper electrode layer, which is far away from the semiconductor layer, so as to obtain the photoelectric detector.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105470320A (en) * | 2015-12-07 | 2016-04-06 | 浙江大学 | Molybdenum disulfide/semiconductor heterojunction photoelectric detector and manufacturing method therefor |
| CN109950403A (en) * | 2019-03-29 | 2019-06-28 | 中国科学院上海技术物理研究所 | A kind of the two-dimensional material PN junction photodetector and preparation method of the regulation of ferroelectricity field |
| WO2023181593A1 (en) * | 2022-03-25 | 2023-09-28 | 三菱電機株式会社 | Electromagnetic wave detector, electromagnetic wave detector array, and image sensor |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105762281A (en) * | 2016-04-15 | 2016-07-13 | 中国科学院上海技术物理研究所 | Ferroelectric local field enhanced two-dimensional semiconductor photoelectric detector and preparation method |
| US11309446B2 (en) * | 2018-06-08 | 2022-04-19 | EWHA University—Industry Collaboration Foundation | Resistive switching element and photovoltaic device including the same |
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| JP2022173791A (en) * | 2021-05-10 | 2022-11-22 | 三菱電機株式会社 | Electromagnetic wave detector and electromagnetic wave detector assembly |
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| CN116314430A (en) * | 2023-04-14 | 2023-06-23 | 西安电子科技大学杭州研究院 | Ferroelectric capacitor type photoelectric detection device based on heterojunction, and preparation and application thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105470320A (en) * | 2015-12-07 | 2016-04-06 | 浙江大学 | Molybdenum disulfide/semiconductor heterojunction photoelectric detector and manufacturing method therefor |
| CN109950403A (en) * | 2019-03-29 | 2019-06-28 | 中国科学院上海技术物理研究所 | A kind of the two-dimensional material PN junction photodetector and preparation method of the regulation of ferroelectricity field |
| WO2023181593A1 (en) * | 2022-03-25 | 2023-09-28 | 三菱電機株式会社 | Electromagnetic wave detector, electromagnetic wave detector array, and image sensor |
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