CN113964219A - Photoelectric transistor based on topological insulator/molybdenum ditelluride heterojunction and preparation method and application thereof - Google Patents
Photoelectric transistor based on topological insulator/molybdenum ditelluride heterojunction and preparation method and application thereof Download PDFInfo
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Abstract
The invention belongs to the technical field of multifunctional phototransistors, and discloses a phototransistor based on a topological insulator/molybdenum ditelluride heterojunction and a preparation method and application thereof. The heterojunction-based phototransistor is on SiO2Transferring the prepared topological insulator nanosheet on a Si substrate, and then adding 2H-MoTe2Transferring the nanosheets to a topological insulator nanosheet, the topological insulator nanosheet and 2H-MoTe2The overlapped parts of the nano sheets form vertical Van der Waals heterojunctions in 2H-MoTe respectively2And evaporating metal bonding layers/Au electrodes on the nanosheets and the topological insulator nanosheets, and annealing in protective gas at 150-300 ℃. The heterogeneous solid carrier tunneling transport mechanism is unique and is in a wide spectrum band range of 405-1550 nmHas good photoelectric response performance. Can be used in the field of logic loop devices or visible-near infrared light response photoelectric devices.
Description
Technical Field
The invention belongs to the technical field of two-dimensional material Van der Waals heterojunction, and particularly relates to a topological insulator/molybdenum ditelluride (2H-MoTe) -based semiconductor device2) A heterojunction phototransistor, a method for manufacturing the same and applications thereof.
Background
Bi2Se3The novel three-dimensional Topological Insulator (TI) has a rhombic hexagonal crystal structure, is stable in environment, is non-toxic and has energy band inversion caused by a strong spin-orbit coupling effect. It reveals unique physical properties of locked spin momentum and narrow direct band gap insulator states with time reversal of destruction of symmetric metal surface states. Meanwhile, the layered Bi derived from the suppressed Dirac Fermi back scattering mechanism, n-type conductivity2Se3Can realize high-efficiency charge transport performance (with 10)3～104cm2High electron mobility,/V · s). Bi stacked by van der Waals (vdWs) force, similar to other layered materials2Se3The nanoplatelets exhibit thickness-dependent tunable surface bandgap behavior (bandgap ranging from 0.2-0.35eV) and high visible-infrared absorption coefficient depending on bulk and surface states. Furthermore, we generally use molecular beam epitaxy, chemical/physical vapor deposition, magnetron sputtering, mechanical lift-off, and hydrothermal methods to synthesize Bi2Se3Or Bi2Te3Nanosheets. Wherein, due to the fact that the material has more than other two-dimensional materials such as MoS2(0.65 nm) shorter interlayer spacing, hence Bi2Se3Or Bi2Te3The interaction force between the layers of vdWs is stronger. At present, large-size ultrathin Bi is difficult to strip from bulk crystals2Te3Or Bi2Se3Nanosheets (< 50 nm).
In recent years, TI nanosheets have been widely used in visible-infrared Photodetectors (PDs), transparent electrodes, quantum devices, field effect transistors, and the like. However, for Bi2Se3Or Bi2Te3PDs have ultra-large dark currents and ultra-short carriers due to dirac topological surface states and narrow band gaps in bulk materials, respectivelyThese drawbacks of recombination lifetimes make it difficult to measure significant photocurrent signals and are reported to a lesser extent. Due to the fact that no surface dangling bond exists and lattice mismatch advantages do not need to be considered, the vdWs heterostructure formed by two or three materials and based on TI provides unprecedented functional attributes for the novel micro-nano device, such as photoinduced negative differential resistance behaviors, high-temperature quantum abnormal Hall effects, spin orbit magnetic switches and the like. In addition, two-dimensional transition metal chalcogenides (TMDs) such as WSe2And WS2Coulomb impurities, phonon scattering, defect-induced trapping points and the like exist in the broadband spectrum, which are main factors influencing the transport indexes such as the carrier mobility of the device, and the large band gap range (0.9-2.2eV) of the coulomb impurities, the phonon scattering, the defect-induced trapping points and the like also limits the light absorption in the broadband spectrum. To solve the above problems, we can combine TI with TMDs to take advantage of both and obtain unexpected properties.
Generally, manual stacking and in-situ growth are the two main methods to achieve TI/TMDs heterojunctions. For example, Liu et al prepared a single layer WSe by a two-step chemical vapor deposition process2/few layers of Bi2Te3The band gap span of the heterojunction is 0.15-1.63 eV. The research result shows that the laser has 20 AW under 633nm laser irradiation-1Self-driven and high responsiveness. Furthermore, Wang et al prepared a few layers of WSe by physical vapor deposition and dry transfer processes2/Bi2Se3A heterostructure. The result shows that the maximum response rate of the tunneling photoelectric detector reaches 3 A.W-1Particularly having a response speed of 4ms at 1456nm laser irradiation. However, few bipolar layered materials such as black phosphorus and MoTe are currently available2Report for TI vdWs heterostructure. In 2D TMDs, the semiconductor phase 2H-MoTe2The material is a material with indirect band gap (0.8-0.9 eV) under multiple layers (more than 10nm), and can absorb ultraviolet-visible-near infrared light. It also has gate controlled transport behavior such as switching of thickness dependent n-type, bipolar and p-type doping. In 2017, Wang et al theoretically confirmed Bi2Se3/MoTe2The heterojunction has wide energy window with Rashba band order, small spin precession length and long spin coherenceLength, etc. From the literature, multilayer 2H-MoTe2Has an electron affinity of 3.8eV and a band gap size of 0.9 eV. Therefore, in theory Bi2Se3/MoTe2The interface produces a large band bending. Furthermore, in such a structure, a certain number of photo-generated electron-hole pairs are generated by a large built-in electric field or bias. Therefore, the research of the structure is expected to promote the development of TI/TMDS vdWs heterojunction system.
Disclosure of Invention
To overcome the disadvantages and shortcomings of the prior art, the present invention provides a topological insulator/2H-MoTe based insulator2A heterojunction phototransistor.
It is another object of the present invention to provide the above topological insulator/2H-MoTe based semiconductor device2A method for fabricating a heterojunction phototransistor.
It is a further object of the present invention to provide the above topological insulator/2H-MoTe based device2Use of a heterojunction phototransistor.
The purpose of the invention is realized by the following technical scheme:
based on topological insulator/MoTe2A heterojunction-based phototransistor in SiO2Transferring the prepared topological insulator nanosheet on a Si substrate, and then adding 2H-MoTe2Transferring the nanosheets to a topological insulator nanosheet, the topological insulator nanosheet and 2H-MoTe2The overlapped parts of the nano sheets form vertical Van der Waals heterojunctions in 2H-MoTe respectively2And evaporating metal bonding layers/Au electrodes on the nanosheets and the topological insulator nanosheets, and annealing in protective gas at 150-300 ℃.
Preferably, the topological insulator nanosheet is Bi2Se3Or Bi2Te3Nanosheets; the thickness of the topological insulator nanosheet is 5-300 nm; the 2H-MoTe2The thickness of the nano sheet is 10-70 nm.
Preferably, the 2H-MoTe2The nano-sheet is prepared by cleaning SiO2the/Si substrate is obtained by a mechanical stripping method;the topological insulator nanosheet is formed by evaporating Ti/Au to SiO2a/Si substrate; adhering a topological insulator tape to the above-described Ti/Au SiO2And/pressing and stripping on the Si substrate.
Preferably, the metal bonding layer is Cr or Ti, the thickness of the metal bonding layer is 3-10 nm, and the thickness of the Au is 20-100 nm.
The topological insulator/MoTe-based2The preparation method of the heterojunction phototransistor comprises the following specific steps:
s1, in the cleaned SiO2Obtaining 2H-MoTe on a/Si substrate by a mechanical stripping method2Soaking the nano sheet in acetone to remove adhesive tape residue on the surface of the sample; selecting MoTe in grass green, yellow green or dark green color by an optical metallographic microscope2Nanosheets;
s2, selecting a tan or dark brown topological insulator nanosheet through an optical metallographic microscope, and transferring the selected 2H-MoTe by using a dry method2The nano sheet is transferred to a topological insulator nano sheet, annealed at 100-150 ℃ under the inert gas condition and then cooled to prepare a topological insulator/2H-MoTe2A vertical heterojunction;
s3, connecting the topological insulator/MoTe2The vertical heterojunction is subjected to photoetching and developing of electrode patterns by a maskless ultraviolet lithography system and is respectively in a 2H-MoTe state2And a metal bonding layer/Au electrode is evaporated on the topological insulator;
s4, annealing treatment is carried out in protective gas at 150-300 ℃ to obtain the topological insulator/MoTe2A base phototransistor.
Preferably, the preparation method for preparing the topological insulator nanosheets in step S2 is a mechanical lift-off method, a gold-assisted lift-off-transfer method, a physical vapor deposition method.
More preferably, the gold-assisted lift-off-transfer method is to mechanically lift off SiO plated with ultrathin Cr/Au or Ti/Au layers by using a tape with a topological insulator single crystal wafer2on/Si, by dry transfer and gold etching solution to form new SiO2And obtaining a clean and undamaged sample on the Si substrate, wherein the thickness of the sample is 5-100 nm.
Preferably, the protective gas in step S2 is nitrogen or argon; the annealing time is 0.3-2 h.
The topology-based insulator/semiconductor MoTe2The heterojunction phototransistor is applied to the field of logic circuit components or visible-near infrared light photoresponsive photoelectric devices.
Compared with the prior art, the invention has the following beneficial effects:
1. topological insulator/MoTe-based method2The heterojunction phototransistor has the characteristics of low bias regulation, excellent photoelectric performance and the like; MoTe adopting topological insulator nanosheet with surface metal state and semiconductor phase2The combination realizes unique bias voltage regulation and control transmission characteristics, has good photoelectric response performance in a wide spectrum waveband range of 405-1550 nm, is a novel van der Waals heterojunction photoelectric transistor structure, and solves the problem of a topological insulator Bi in the field2Se3Or Bi2Te3The method has the key scientific problems that the ultrathin sheet is difficult to strip through machinery, the dark current of the device is large, the combination research of the broken energy band is less, the recombination life of the current carrier of the detector is short, and the like.
2. Bi of the present invention2Se3Or Bi2Te3The unique surface metallic state, high carrier mobility and infrared absorption characteristic can reduce MoTe2Electrode contact barriers, drive bias magnitude and improved optoelectronic performance;
3. topological insulator/MoTe of the invention2The heterogeneous photoelectric transistor junction belongs to III-type broken energy band arrangement and maintains bipolar MoTe2Inherent high electron mobility and gate voltage controllability can also realize two charge transmission mechanisms of direct tunneling and Fowler-Nordheim tunneling;
4. the invention is based on a topological insulator/MoTe2The heterojunction phototransistor has wide spectrum (405nm-1.55 μm, fast response (1-50 ms), and high sensitivity (to Bi)2Se3/MoTe2The optical responsivity of the heterojunction at 405nm can reach more than 1.71A/W, the External Quantum Efficiency (EQE) can reach more than 523%, and the maximum specific detectivity (D)*) Is close to 1012Jones), realizes larger optical gain and lower noise, and can be widely applied to important fields of logic switches, optical communication, medical imaging and the like.
Drawings
FIG. 1 shows different thicknesses Bi before transfer in a gold-assisted stripping-transfer method2Se3Nanoplatelet atomic force microscopy images.
FIG. 2 shows Bi of the present invention2Se3Schematic side view of a/2H-MoTe heterojunction phototransistor.
FIG. 3 shows the preparation of the topological insulator Bi according to example 1 by a gold-assisted lift-off-transfer method2Se3Optical microscopy process map of (a).
FIG. 4 shows Bi prepared in example 12Se3/2H-MoTe2Schematic diagram of three-dimensional structure of heterojunction phototransistor and optical microscope photo of its device.
FIG. 5 shows Bi obtained in example 12Se3/2H-MoTe2And (3) testing the electrical performance of the heterojunction phototransistor.
FIG. 6 shows Bi obtained in example 12Se3/2H-MoTe2Photoelectric characteristics of the heterojunction phototransistor under 405nm laser.
FIG. 7 is a graph at VdsBi obtained in example 1 at 0V and +0.5V2Se3/2H-MoTe2The heterojunction phototransistor has a photoresponse curve at different wavelengths.
FIG. 8 is a graph at VdsWhen 0V, Bi obtained in example 12Se3/2H-MoTe2Heterojunction phototransistor in the dark state and 405nm laser irradiation (45.93 mW/cm)2) 150 periods of time resolved photoswitch curves measured under alternating.
FIG. 9 shows Bi prepared in example 22Se3/2H-MoTe2Optical microscope photographs and electrical performance tests of heterojunction phototransistors.
FIG. 10 shows Bi prepared in example 22Se3/2H-MoTe2Atomic force microscopy of heterojunction phototransistors.
FIG. 11 is a schematic view of an embodimentBi obtained in example 32Te3/2H-MoTe2Optical microscopy pictures and electrical performance tests of heterojunction phototransistors.
FIG. 12 shows Bi in example 32Te3/2H-MoTe2Atomic force microscopy of heterojunctions.
Detailed Description
The following examples are presented to further illustrate the present invention and should not be construed as limiting the invention. Unless otherwise specified, the technical means used in the examples are conventional means well known to those skilled in the art. Reagents, methods and apparatus used in the present invention are conventional in the art unless otherwise indicated.
Example 1
1. Mixing SiO2Performing ultrasonic treatment on the Si substrate for 10min by using acetone, isopropanol and deionized water respectively, and drying by using a nitrogen gun;
2. with SiO2using/Si as substrate, and preparing semiconductor 2H-MoTe by tape stripping method2Nano-sheet, 2H-MoTe with the thickness of 10-70 nm is selected by an optical microscope2Nanosheets;
3. evaporating 2nm Ti/2nmAu to SiO by adopting an electron beam evaporation plating instrument2a/Si substrate, Bi is stripped and transferred by gold auxiliary2Se3Blue tape rapidly adhered to the above Ti/Au SiO2Pressing on a Si substrate for 1-2 min, and slowly stripping to obtain Bi with bright color2Se3(ii) a Then, the gold etching solution (KI: I) is added into the mixture by a polyvinyl alcohol (PVA)/polymethyl methacrylate (PMMA) transfer method2:H2Mass ratio of O4: 1:40) to Bi2Se3Transferring and cleaning to obtain a topological insulator Bi with the thickness of 5-300 nm2Se3Nanosheets, Bi having a thickness of about 12nm selected by optical microscopy2Se3Nanosheets.
3. Bi selected in the step 3 is transferred by a three-dimensional micro-area transfer platform and a PVA method2Se3Nanosheet and 2H-MoTe selected in step 22The two nano sheets are aligned, and the overlapped parts of the two nano sheets construct a heterojunction to prepare Bi2Se3/2H-MoTe2And (3) annealing the van der waals heterojunction for 0.3-2 h at 100-150 ℃ under the condition of nitrogen or argon, enhancing the contact between the van der waals heterojunction and the nitrogen or argon, and removing impurities such as small molecules on the interface.
4. Bi by using maskless ultraviolet photoetching system and evaporation process2Se3/2H-MoTe2Preparing a 10nm Cr/50nmAu electrode on the Van der Waals heterojunction; then annealing for 0.3-1 h at 150-300 ℃ under the condition of nitrogen or argon to improve the Bi content of the electrode2Se3/2H-MoTe2Contact quality between van der waals heterojunctions and reduction of contact barrier to produce Bi2Se3/2H-MoTe2A heterojunction phototransistor.
FIG. 1 shows Bi of different thicknesses prepared in example 12Se3Atomic force microscopy of nanoplatelets. Wherein, (a) is a two-dimensional atomic force microscope image of the test region, (b) is a three-dimensional atomic force microscope image of the test region, and (c) is a height image of three positions in the image a. As can be seen from FIG. 1, the first step of gold-assisted lift-off in the gold-assisted lift-off-transfer method can provide ultra-thin Bi having a thickness of 5 to 25nm2Se3Nanosheets. FIG. 2 shows Bi2Se3/2H-MoTe2A schematic side view of a heterojunction phototransistor. Wherein, the light gray on D (anode), S (cathode) and the nano-sheet are all electrodes. As can be seen from FIG. 2, the heterojunction-based phototransistor is in SiO2Transferring the prepared topological insulator nanosheet on a Si substrate, and then adding 2H-MoTe2Transferring the nanosheets to a topological insulator nanosheet, the topological insulator nanosheet and 2H-MoTe2The overlapped parts of the nano sheets form vertical Van der Waals heterojunctions in 2H-MoTe respectively2And metal bonding layers/Au electrodes are evaporated on the nanosheets and the topological insulator nanosheets. FIG. 3 shows the preparation of the topological insulator Bi by a gold-assisted lift-off transfer method2Se3Optical microscopy process map of (a). First (a) is Bi on ultra-thin Ti/Au2Se3(ii) a Then (b) adding Bi2Se3Bi transferred to PVA2Se3Nanosheets; finally (c) is in SiO2And transferring the prepared topological insulator nanosheet on the Si substrate. As can be seen from fig. 3, byThe gold-assisted stripping-transferring method can completely transfer Bi with different sizes and thicknesses2Se3Nanosheets. FIG. 4 shows Bi prepared in example 12Se3/MoTe2Three-dimensional structure schematic diagram of heterojunction phototransistor and its optical microscope photograph. Wherein (a) is Bi2Se3/2H-MoTe2A three-dimensional structural schematic of a heterojunction phototransistor; (b) is Bi2Se3/2H-MoTe2Optical micrographs of heterojunction phototransistors. As can be seen from FIG. 4, Bi is present between the electrodes E1 and E22Se3Between the electrodes E3 and E4 is MoTe2Central Bi of the channel layer2Se3And 2H-MoTe2The coincident region is a heterojunction channel layer. The gate of the transistor is regulated by back Si, and the prepared electrode pattern can be used for independently testing Bi through an E1-E2 electrode2Se32H-MoTe alone tested by E3-E4 electrodes2The heterojunction (Bi) can be tested by other combined electrodes such as E2-E3 and the like2Se3And 2H-MoTe2The area of coincidence of the two) of the two.
FIG. 5 shows Bi obtained in example 12Se3/2H-MoTe2And (3) testing the electrical performance of the heterojunction phototransistor. Wherein (a) is 2H-MoTe2The transfer curve of the device is an output curve with the grid voltage of-60V in an inset; (b) is Bi2Se3The transfer curve of the device is an output curve with the grid voltage of-60V in an inset; (c) is Bi2Se3/2H-MoTe2Heterojunction phototransistor Ids-VdsCurves, inset is a semi-logarithmic form of the curve; (d) is a VdsBi at 0.3V2Se3/2H-MoTe2Transfer curve of heterojunction phototransistor. As can be seen from FIG. 5, the multilayer MoTe prepared in Panel (a)2Realizing bipolar transmission behavior, Cr metal bonding layer and multilayer MoTe2There is an asymmetric Schottky contact (sub-linear) between them, and Bi prepared in the graph (b)2Se3The device exhibits n-type transmission characteristics; as can be seen from the heterojunction phototransistor results in the graphs (c) and (d), the reverse current increased to 0.57 μ a,the forward current is firstly inhibited and then increased to about 0.15 muA, so that the rectifying behavior is changed, and the heterojunction phototransistor has two different transmission mechanisms including direct tunneling and FN tunneling; meanwhile, the p-type dominant bipolar behavior is realized under the small bias voltage of 0.3V, and the hole switching ratio (the switching ratio is the ratio of the on-state current to the off-state current of the device) reaches 1.1 multiplied by 102The good gate voltage regulation capability of the heterojunction phototransistor under small bias voltage is demonstrated.
FIG. 6 shows Bi obtained in example 12Se3/2H-MoTe2Photoelectric characteristics of the heterojunction phototransistor under 405nm laser. Wherein (a) is I of different optical power densitiesds-VdsA curve; (b) is a VdsTime-dependent optical response curves at different optical power densities when the voltage is 0V; (c) is at VdsThe optical responsivity and photocurrent curves with the optical power density at 0V and + 0.5V. (d) Is at VdsEQE and specific detectivity curves at 0V and +0.5V versus optical power density. As can be seen from FIG. 6, Bi is present in2Se3/2H-MoTe2The heterojunction phototransistor has excellent self-driven photoelectric performance at the laser wavelength of 405nm, wherein the maximum light responsivity, the maximum external quantum efficiency and the specific detectivity respectively reach 92 mA.W-1、28％、7.21×1011Jones, found a specific detectivity at 10 at zero bias9～1011Benefiting from Bi between the Jones ranges2Se3/2H-MoTe2The heterojunction phototransistor has the advantage of low dark current under type III bandgap alignment. Based on Bi2Se3/MoTe2The heterojunction phototransistor has wide spectrum (405nm-1.55 μm, fast response (1-50 ms), and high sensitivity (to Bi)2Se3/2H-MoTe2The maximum optical responsivity of the heterojunction at 405nm can reach 1.71A/W, the maximum External Quantum Efficiency (EQE) reaches 523%, and the maximum specific detectivity (D)*) Is close to 1012Jones), greater optical gain and lower noise are achieved.
FIG. 7 is a graph at VdsBi obtained in example 1 at 0V and +0.5V2Se3/2H-MoTe2Heterojunction phototransistorLight responsivity curves at different wavelengths. As can be seen from FIG. 7, Bi is present in2Se3/2H-MoTe2The heterojunction phototransistor has good light responsivity under the laser wavelength of 405-1550 nm, which shows that the narrow band gap MoTe2(-0.9 eV) and Bi2Se3The (0.3 eV) incorporation can achieve good broad spectrum light detection.
FIG. 8 is a graph at VdsWhen 0V, Bi obtained in example 12Se3/2H-MoTe2Heterojunction phototransistor in the dark state and 405nm laser irradiation (45.93 mW/cm)2) 150 periods of time resolved photoswitch curves measured under alternating. As can be seen in fig. 8, the current decay is 2.7%, which is less than the stability threshold of 5%, indicating that the heterojunction phototransistor has good stability and repeatability at 405nm light.
Example 2
The difference from example 1 is that: selected Bi2Se3Thickness of about 24.8nm, MoTe2The thickness was 26.9 nm. FIG. 9 shows Bi obtained in example 22Te3/2H-MoTe2Optical microscopy pictures and electrical performance tests of heterojunction phototransistors. Wherein (a) is a heterojunction having a measured overlap area of 234 μm2，2H-MoTe2Above, Bi2Se3Below; (b) is Bi2Te3/2H-MoTe2Current-voltage curves for heterojunction phototransistors, MoTe being known2Connected with anode (Drain), Bi2Se3The junction to the cathode (Source) shows that the heterojunction phototransistor exhibits a significant reverse rectification behavior with a rectification ratio (-3/3V) of 30. FIG. 10 shows Bi in example 22Te3/2H-MoTe2In the atomic force microscope picture of the heterojunction phototransistor, Bi is known2Se3Has a thickness of about 24.8nm, 2H-MoTe2Is about 26.9nm, indicating that Bi is produced2Se3The thickness is much thinner than that of the conventional mechanical stripping method, and the advantages of the process are highlighted.
Example 3
The difference from example 1 is that: selected Bi2Se32H-MoTe with the thickness of about 5.87nm2The thickness is about 15.7 nm. FIG. 11 shows Bi obtained in example 32Te3/2H-MoTe2Optical microscopy pictures and electrical performance tests of heterojunction phototransistors. Wherein (a) is a value measured as a coincidence area of the heterojunction of 20 μm2，2H-MoTe2Above, Bi2Se3Below; (b) shown as Bi2Te3/2H-MoTe2Current-voltage curves for heterojunction phototransistors, MoTe being known2Connected with cathode (Source), Bi2Se3Connected to the anode (Drain) shows that the heterojunction phototransistor exhibits a significant reverse rectification behavior with a rectification ratio (-3/3V) of 57. FIG. 12 shows Bi in example 32Te3/2H-MoTe2In the atomic force microscope picture of the heterojunction phototransistor, Bi is known2Se3Has a thickness of about 10.2nm, 2H-MoTe2Is about 21.5nm, indicating that Bi is produced2Se3The thickness can be close to 5nm, which is much thinner than that of the product prepared by the conventional mechanical stripping method, thus highlighting the advantages of the process.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations and simplifications are intended to be included in the scope of the present invention.
Claims (10)
1. A topological insulator/molybdenum ditelluride heterojunction based phototransistor, wherein said heterojunction based phototransistor is in SiO2Transferring the prepared topological insulator nanosheet on a Si substrate, and then adding 2H-MoTe2Transferring the nanosheets to a topological insulator nanosheet, the topological insulator nanosheet and 2H-MoTe2The overlapped parts of the nano sheets form vertical Van der Waals heterojunctions in 2H-MoTe respectively2And evaporating metal bonding layers/Au electrodes on the nanosheets and the topological insulator nanosheets, and annealing in protective gas at 150-300 ℃.
2. The topological insulator/molybdenum ditelluride heterojunction based phototransistor of claim 1, wherein said topological insulator nanosheet is Bi2Se3Or Bi2Te3Nanosheets; the thickness of the topological insulator nanosheet is 5-300 nm; the 2H-MoTe2The thickness of the nano sheet is 10-70 nm.
3. The topological insulator/molybdenum ditelluride heterojunction based phototransistor as claimed in claim 2, wherein said 2H-MoTe2The nano-sheet is prepared by cleaning SiO2the/Si substrate is obtained by a mechanical stripping method.
4. The topological insulator/molybdenum ditelluride heterojunction based phototransistor of claim 2, wherein said topological insulator nanoplatelets are Ti/Au evaporated to SiO2a/Si substrate to which a topological insulator tape is adhered2And/pressing and stripping on the Si substrate.
5. The topological insulator/molybdenum ditelluride heterojunction based phototransistor as claimed in claim 1, wherein said metal adhesion layer is Cr or Ti with a thickness of 3-10 nm and said Au with a thickness of 20-100 nm.
6. The method for preparing a topological insulator/molybdenum ditelluride heterojunction based phototransistor according to any of claims 1 to 5, comprising the following specific steps:
s1, in the cleaned SiO2Obtaining 2H-MoTe on a/Si substrate by a mechanical stripping method2Soaking the nano sheet in acetone to remove adhesive tape residue on the surface of the sample; selecting MoTe in grass green, yellow green or dark green color by an optical metallographic microscope2Nanosheets;
s2, selecting a tan or dark brown topological insulator nanosheet through an optical metallographic microscope, and transferring the selected 2H-MoTe by using a dry method2The nano sheet is transferred to a topological insulator nano sheet, annealed at 100-150 ℃ under the inert gas condition and then cooled to prepare a topological insulator/2H-MoTe2A vertical heterojunction;
s3, connecting the topological insulator/MoTe2The vertical heterojunction is subjected to photoetching and developing of electrode patterns by a maskless ultraviolet lithography system and is respectively in a 2H-MoTe state2And a metal bonding layer/Au electrode is evaporated on the topological insulator;
s4, annealing treatment is carried out in protective gas at 150-300 ℃ to obtain the topological insulator/MoTe2A base phototransistor.
7. The method of claim 6, wherein the method of fabricating the topological insulator nanosheets in step S2 is mechanical lift-off, gold-assisted lift-off-transfer, or physical vapor deposition.
8. The method of claim 7, wherein the gold-assisted lift-off-transfer process is a mechanical lift-off process using a single wafer of topological insulator on an ultra-thin Cr/Au or Ti/Au coated SiO layer2on/Si, by dry transfer and gold etching solution to form new SiO2And obtaining a clean and undamaged sample on the Si substrate, wherein the thickness of the sample is 5-100 nm.
9. The method of claim 6, wherein the protective gas in step S2 is nitrogen or argon; the annealing time is 0.3-2 h.
10. Use of a phototransistor based on a topological insulator/molybdenum ditelluride heterojunction as defined in any one of claims 1 to 5 in the field of logic circuit components or visible-near infrared photoresponsive photovoltaic devices.
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