CN118299429A - Field effect transistor based on molybdenum ditelluride two-dimensional material - Google Patents
Field effect transistor based on molybdenum ditelluride two-dimensional material Download PDFInfo
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- HITXEXPSQXNMAN-UHFFFAOYSA-N bis(tellanylidene)molybdenum Chemical compound [Te]=[Mo]=[Te] HITXEXPSQXNMAN-UHFFFAOYSA-N 0.000 title claims abstract description 153
- 230000005669 field effect Effects 0.000 title claims abstract description 45
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000002135 nanosheet Substances 0.000 claims abstract description 23
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 17
- 238000006467 substitution reaction Methods 0.000 claims abstract description 17
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical group [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 13
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- 239000010410 layer Substances 0.000 claims description 42
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 4
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- 229910004541 SiN Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000969 carrier Substances 0.000 claims description 3
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- 229910052737 gold Inorganic materials 0.000 claims description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 8
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 125000004429 atom Chemical group 0.000 description 12
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- QIHHYQWNYKOHEV-UHFFFAOYSA-N 4-tert-butyl-3-nitrobenzoic acid Chemical compound CC(C)(C)C1=CC=C(C(O)=O)C=C1[N+]([O-])=O QIHHYQWNYKOHEV-UHFFFAOYSA-N 0.000 description 2
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Abstract
A field effect transistor based on molybdenum ditelluride two-dimensional material comprises a molybdenum ditelluride channel, wherein the molybdenum ditelluride channel is of a molybdenum ditelluride single-layer nano-sheet structure, a single cell of the molybdenum ditelluride single-layer nano-sheet structure is composed of four rows of molybdenum ditelluride molecules, each row of molybdenum ditelluride molecules is composed of two molybdenum ditelluride molecules, one tellurium atom in the second row of molybdenum ditelluride molecules is subjected to substitution doping, and the substituted tellurium atom is in bond connection with one molybdenum atom in the second row of molybdenum ditelluride molecules and one molybdenum atom in the third row of molybdenum ditelluride molecules; the left half part of the molybdenum ditelluride channel is a single-layer nano sheet structure of molybdenum ditelluride doped by substitution, and the right half part of the molybdenum ditelluride channel is a single-layer nano sheet structure of molybdenum ditelluride doped by non-substitution, so that the substitution doped part and the non-substitution doped part of the single-layer nano sheet structure of molybdenum ditelluride form the molybdenum ditelluride channel with rectification characteristic, thereby realizing the field effect transistor based on the molybdenum ditelluride two-dimensional material.
Description
Technical Field
The invention relates to a field effect transistor, in particular to a field effect transistor based on molybdenum ditelluride two-dimensional material.
Background
A rectifying field effect transistor is a type of field effect transistor, and its working principle is to control the flow of current by using the movement of electrons and holes in a semiconductor material, and has a rectifying effect, so that conversion between alternating current and direct current can be achieved. The rectifying field effect transistor may be made of silicon material or semiconductor material such as molybdenum telluride (MoTe 2), silicon carbide (SiC) and germanium selenide (GeSe).
Unlike traditional three-dimensional materials, two-dimensional materials have only two dimensions, and thus have many special properties and application potential; the two-dimensional material has the advantages of high forbidden bandwidth, high resistivity, high thermal conductivity, excellent photoelectric property and the like different from the common material, and is widely applied to the technical fields of high temperature, high frequency, photoelectricity, radiation resistance and the like. Therefore, it is desirable to apply two-dimensional materials to field effect transistor technology to improve the specific performance of the field effect transistor.
Disclosure of Invention
Aiming at the requirements in the prior art, the invention provides a field effect transistor based on a molybdenum ditelluride two-dimensional material, and aims to ensure that the molybdenum ditelluride two-dimensional material has rectification characteristics and realize the rectification function of the field effect transistor.
A field effect transistor based on molybdenum ditelluride two-dimensional material comprises a molybdenum ditelluride channel, wherein the molybdenum ditelluride channel is of a molybdenum ditelluride single-layer nano-sheet structure, a single cell of the molybdenum ditelluride single-layer nano-sheet structure is composed of four rows of molybdenum ditelluride molecules, each row of molybdenum ditelluride molecules is composed of two molybdenum ditelluride molecules, the two molybdenum ditelluride molecules in each row are arranged along Z direction, the two molybdenum ditelluride molecules in each row are arranged along Y direction, the two molybdenum atoms in the molybdenum ditelluride molecules are arranged along X direction, one tellurium atom in the second row of molybdenum ditelluride molecules is doped in a substituted manner, and the substituted tellurium atom is bonded with one molybdenum atom in the second row of molybdenum ditelluride molecules and one molybdenum atom in the third row of molybdenum ditelluride molecules; the left half part of the molybdenum ditelluride channel is of a substitution-doped molybdenum ditelluride single-layer nano sheet structure, the right half part of the molybdenum ditelluride channel is of an un-substitution-doped molybdenum ditelluride single-layer nano sheet structure, the left side and the right side of the upper surface of the molybdenum ditelluride channel are respectively connected with a source electrode and a drain electrode, the middle part of the upper surface of the molybdenum ditelluride channel is provided with a first isolation layer, and the upper surface of the first isolation layer is provided with a first grid electrode; the left-right direction of the molybdenum ditelluride channel is Z direction, and the up-down direction of the molybdenum ditelluride channel is X direction.
The method further comprises the following steps: the left side and the right side of the lower surface of the molybdenum ditelluride channel are respectively connected with a source electrode and a drain electrode, the middle part of the lower surface of the molybdenum ditelluride channel is provided with a second isolation layer, and the lower surface of the second isolation layer channel is provided with a second grid electrode, so that the double-grid field effect transistor is formed, the voltage of the first grid electrode is used for controlling the conductive property of the molybdenum ditelluride channel, and the second grid electrode is used for regulating the electric field distribution in the molybdenum ditelluride channel so as to influence the concentration of carriers in the molybdenum ditelluride channel.
The method further comprises the following steps: and carrying out substitution doping on tellurium atoms to obtain one of N, P, as, sb, bi elements.
The method further comprises the following steps: the first isolation layer and the second isolation layer are made of any one of SiO 2、SiC、SiN、HfO2、TiO2、Al2O3 and AlN.
The method further comprises the following steps: the metal adopted by the grid electrode, the source electrode and the drain electrode is one or two of Au, cu, ti, cr, ag.
The method further comprises the following steps: the gate electrode was in contact with the molybdenum ditelluride channel after being prepared by vertical hot wall chemical vapor deposition CVD, and the vacuum phase difference distance was set to 0.34065nm.
The method further comprises the following steps: and (3) growing a silylene substrate layer on the lower surface of the molybdenum ditelluride channel in a vacuum environment.
The method further comprises the following steps: growing a 10nm molybdenum ditelluride P-type heavily doped region and a molybdenum ditelluride N-type heavily doped region on the molybdenum ditelluride epitaxial layer by using a vertical hot wall Chemical Vapor Deposition (CVD) method, and forming a molybdenum ditelluride channel; and growing a 10nm silylene P-type heavily doped region and a silylene N-type heavily doped region on the silylene epitaxial layer by using a vertical hot wall Chemical Vapor Deposition (CVD) method, and forming a silylene substrate layer.
The method further comprises the following steps: the silylene substrate layer is prepared from two-dimensional honeycomb silylene, and the silylene has a warpage single-layer six-membered ring structure.
The invention has the beneficial effects that: the substitution doping is carried out on a half part of the single-layer nano sheet structure of molybdenum ditelluride, and tellurium atoms at specific positions in a single cell are doped during the substitution doping, so that a substitution doping part and an non-substitution doping part of the single-layer nano sheet structure of molybdenum ditelluride form a molybdenum ditelluride channel with rectification characteristic, and a field effect transistor based on a two-dimensional molybdenum ditelluride material is realized; the molybdenum ditelluride two-dimensional material is very thin, so that the volume of the field effect transistor is reduced; the molybdenum ditelluride single-layer nano sheet structure can reduce impurity scattering after substitution doping, improve carrier mobility, and reduce resistance and power consumption of the field effect transistor.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a schematic diagram of the structure of a unit cell;
FIG. 3 is a structural relationship diagram of a molybdenum ditelluride channel and a silylene substrate layer;
FIG. 4 is a graph of the volt-ampere curve of an un-substituted doped molybdenum ditelluride monolayer nano-platelet structure;
FIG. 5 is a graph of the substituted molybdenum ditelluride monolayer nano-platelet structure and its voltammogram;
FIG. 6 is a schematic representation of the selection of different doping sites within a molybdenum ditelluride cell;
FIG. 7 is a graph of current voltage data based on different doping sites within a molybdenum ditelluride cell;
Fig. 8 is a graph of the output of a field effect transistor regulated by a gate voltage in accordance with the present invention.
In fig. 4 to 6, the orange atoms are tellurium atoms, the green atoms are molybdenum atoms, and the blue atoms are nitrogen atoms.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings. Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention. The terms left, middle, right, upper, lower, etc. in the embodiments of the present invention are merely relative concepts or references to the normal use state of the product, and should not be construed as limiting.
A field effect transistor based on molybdenum ditelluride two-dimensional material, as shown in figure 1, comprises a molybdenum ditelluride channel 4, wherein the molybdenum ditelluride channel 4 is a single-layer nano-sheet structure of molybdenum ditelluride, the single-layer nano-sheet structure of molybdenum ditelluride is prepared by adopting a chemical vapor deposition or liquid phase stripping method and serves as an electron transmission channel of a core, a unit cell of the single-layer nano-sheet structure of molybdenum ditelluride consists of four rows of molybdenum ditelluride molecules, each row of molybdenum ditelluride molecules consists of two molybdenum ditelluride molecules, two molybdenum ditelluride molecules in each row are arranged along Z direction, two molybdenum atoms in each row of molybdenum ditelluride molecules are arranged along Y direction, two molybdenum atoms in each row of molybdenum ditelluride molecules are arranged along X direction, carrying out substitution doping on one tellurium atom in the second row of molybdenum ditelluride molecules, wherein the substituted tellurium atom is in bond connection with two molybdenum atoms in the second row of molybdenum ditelluride molecules and one molybdenum atom in the third row of molybdenum ditelluride molecules; The left half part of the molybdenum ditelluride channel is of a substitution doped molybdenum ditelluride single-layer nano sheet structure, the right half part of the molybdenum ditelluride channel is of an un-substitution doped molybdenum ditelluride single-layer nano sheet structure, a metal half contact-Schottky junction is formed by the left half part and the right half part of the molybdenum ditelluride channel, the left side and the right side of the upper surface of the molybdenum ditelluride channel are respectively connected with a source electrode 1 and a drain electrode 5, a first isolation layer 31 is arranged in the middle of the upper surface of the molybdenum ditelluride channel 4, and a first grid electrode 21 is arranged on the upper surface of the first isolation layer 31; the left-right direction of the molybdenum ditelluride channel 4 is Z direction, and the up-down direction of the molybdenum ditelluride channel 4 is X direction; The left and right sides of the lower surface of the molybdenum ditelluride channel 4 are respectively connected with a source electrode 1 and a drain electrode 5, the middle part of the lower surface of the molybdenum ditelluride channel 4 is provided with a second isolation layer 32, the lower surface of the second isolation layer 32 is provided with a second grid electrode 22, thus forming a double-grid field effect transistor, the double-grid structure has certain advantages and characteristics in some aspects compared with a single-grid structure, the double-grid structure can control current by adjusting the voltage between the two grid electrodes, thereby realizing finer current control, having higher flexibility and accuracy, causing current distortion and performance reduction due to short channel effect in a micro-size device, effectively inhibiting the short channel effect under the normal condition, The voltage of the first gate 21 is used for controlling the conductive property of the molybdenum ditelluride channel, the second gate 22 is used for adjusting the electric field distribution in the molybdenum ditelluride channel to influence the concentration of carriers in the molybdenum ditelluride channel, for example, 0.5V of a single gate structure can be split into 0.4V of a top gate and 0.1V of a bottom gate in a double gate structure, so as to realize more accurate electric field control; The leakage current can be effectively reduced, the working efficiency and performance of the device are improved, the leakage current is the current passing through an insulating layer or other isolation materials when the device is closed, the leakage current can have negative effects on the power consumption and performance of the device usually caused by the thermal excitation or quantum tunneling effect of electrons or holes, therefore, the leakage current needs to be reduced as much as possible in the application of low power consumption and high performance, the double-gate structure can more effectively control the formation and closing of the channel, thereby reducing the occurrence of the leakage current, the channel can be completely closed by accurately adjusting the electric potential of the two gates, the leakage current can be reduced when the conduction is not needed, the device can work in a wider working voltage range, The applicability is wider; When a positive voltage is applied between the first grid electrode and the second grid electrode, a molybdenum ditelluride material structure below the isolation layer forms a channel, and controls current flow, and the molybdenum ditelluride channel is connected with the source electrode and the drain electrode, so that electrons can flow from the source electrode or the drain electrode to the drain electrode or the source electrode; when the molybdenum ditelluride channel is formed, the source electrode is applied with a positive voltage, and the drain electrode is grounded, so that a voltage difference is established between the source electrode and the drain electrode, and electrons can move along the molybdenum ditelluride channel; the voltage of the grid electrode plays a role in adjusting the width of an electron channel in the molybdenum telluride channel, when the voltage applied by the grid electrode changes, the width of the electron channel also changes correspondingly, and the size of the electron flow can be controlled by adjusting the width of the electron channel, so that the current control and adjustment of the field effect transistor are realized.
Therefore, the selection of the molybdenum ditelluride channel is critical, the rectification current of the field effect transistor is large, the control current is small, the rectification ratio can reach 10 2 at 0.2V, the rectification ratio reaches the maximum value at 0.3V, and the HP application standard can be met. In another embodiment, as shown in fig. 3, growing a silylene substrate layer on the lower surface of the molybdenum ditelluride channel in a vacuum environment, wherein the molybdenum ditelluride channel is made of different materials from the silylene substrate layer, and schottky contact is formed between the molybdenum ditelluride channel and the silylene substrate layer; vacuum is a critical step to ensure a clean surface at high temperature and to provide a desirable environment for material growth; growing a 10nm molybdenum ditelluride P-type heavily doped region and a molybdenum ditelluride N-type heavily doped region on the molybdenum ditelluride epitaxial layer by using a vertical hot wall Chemical Vapor Deposition (CVD) method, and forming a molybdenum ditelluride channel; growing a 10nm silicon alkene P type heavy doping region and a silicon alkene N type heavy doping region on the silicon alkene epitaxial layer by using a vertical hot wall chemical vapor deposition method CVD, and forming a silicon alkene substrate layer, wherein the molybdenum telluride P type heavy doping region corresponds to the silicon alkene P type heavy doping region, and the molybdenum telluride N type heavy doping region corresponds to the silicon alkene N type heavy doping region; the silicon alkene substrate layer is prepared from two-dimensional honeycomb type silicon alkene, the silicon alkene has a warpage single-layer six-membered ring structure, the silicon alkene has higher electron mobility than a traditional silicon material, the transmission speed of electrons in the silicon alkene is higher, the silicon alkene has excellent heat conduction performance, the heat dissipation effect of a field effect transistor can be improved, the heat accumulation is reduced, and the stability and the reliability of the field effect transistor are improved by matching with a molybdenum telluride channel.
The tellurium atoms are substituted and doped into one of N, P, as, sb, bi elements, and different doping atoms can enable the material to have different volt-ampere characteristic effects, wherein the doped material has rectification characteristics by taking N atoms as an example; the first isolation layer and the second isolation layer are used for preventing short circuits of the grid electrode and the molybdenum telluride channel and can be oxide or nitride, and in the embodiment, the first isolation layer and the second isolation layer are made of any one of SiO 2、SiC、SiN、HfO2、TiO2、Al2O3 and AlN, and the thicknesses of the first isolation layer and the second isolation layer are 10nm-70nm; the gate electrode, the source electrode and the drain electrode adopt one or two of Au, cu, ti, cr, ag metals, the film formation can be uniform and compact by using the metals, the gate electrode is contacted with a molybdenum ditelluride channel after being prepared by vertical hot wall chemical vapor deposition CVD, the vacuum phase difference distance is set to 0.34065nm, and each atom of nano-scale molybdenum ditelluride can reach the optimal stress uniform state by the existence of the vacuum distance.
As shown in fig. 4 and 5, we can see that the voltammogram of the original two-dimensional single-layer MoTe 2 is symmetrical, the rise and fall fluctuation is large, and the obvious available characteristic is not generated; the mere use of molybdenum ditelluride material as a channel is completely unacceptable for FET devices. However, after substitutional doping of different atoms, such as doping of the N atoms, the volt-ampere characteristics of the resulting schottky junction-molybdenum ditelluride N-doped nanoplate device are significantly altered. In the graph, the current value is small and has no obvious change when the voltage is between-0.4V and 0V; when the bias voltage is 0V-0.4V, the current is obviously increased, the increase is smooth, and the data display is reliable; the positive and negative asymmetric current shows that the N-doped MoTe 2 nano-sheet has excellent rectifying property, the rectifying ratio value can reach 10 4 or more, when the rectifying ratio has extremely high value, the field effect transistor can efficiently convert alternating voltage into direct voltage, almost no energy is lost in the electron transportation process, the formed field effect transistor has obvious advantages and outstanding utilizable value, and the material doped by the substitution can reduce impurity scattering, improve the carrier mobility and reduce the resistance and the power consumption of the device.
As shown in fig. 6, the choice of doping sites for molybdenum telluride is different and a selection of more representative sites is labeled A, B, C, D, E, respectively. Wherein ABDE of the four doping positions are Te atoms, and C is Mo atoms. In fact, doping is performed for each position of the unit cell, and only a few positions are selected to give a specific explanation. In this context, the doping position selected in the mentioned field effect transistor is D, and next, it will be explained why D is selected as the doping position in another figure, as shown in fig. 7, current-voltage data based on different doping positions are given in the figure, it can be seen that I-Vcurve selected as C for the substitutional doping position has almost high symmetry in the interval of-0.5V to 0.5V in current value, the symmetry of current means that rectifying effect is almost not present, so the configuration obviously should not be selected, and the substitutional doping result of Mo atoms at other positions indicates that the rectifying effect of selecting Mo atoms is completely unsatisfactory; next looking at the voltage-current values at these four locations A, B, D, E, which are configured as three-stage devices with calculated maximum rectification ratios 1852, 2782, 19802, 7183, respectively, it can be seen that the rectification is best when the doping location is selected as D, and that the reason for this is that the substitutional atoms are located in the relative center or interior of the unit cell, which will generally interact more with its surrounding atoms and change its electronic structure, so that a pronounced rectification behavior occurs with the application of a bias voltage.
At present, as the short channel effect and the moore's law are approaching to the physical limit, the transistor with the gate length reduced to below 10 nanometers can hardly reach the aim of the international semiconductor technology roadmap (ITRS); by the technical scheme, the field effect transistor has the advantages of small volume, quick response and the like, and the molybdenum ditelluride is a two-dimensional material, so that a molybdenum ditelluride channel can be designed to be very thin, the volume of the whole field effect transistor becomes smaller, and the field effect transistor is suitable for being integrated in a microchip. The field effect transistor based on the molybdenum ditelluride two-dimensional material has the transverse length of 4.22nm and the longitudinal length of 3.4nm, and has obviously exquisite size compared with the prior field effect transistor; the molybdenum ditelluride has high electron mobility and high electron transmission speed, so that the fast response of the field effect transistor can be realized, and the molybdenum ditelluride is suitable for high-frequency application; in addition, as shown in fig. 8, when a positive bias is applied, the source-drain current decreases as the gate voltage increases, but the rectification ratio is significantly improved by an order of magnitude. And saturates at smaller source drain voltages; when a negative gate voltage is applied, the source drain current increases. But its rectifying effect is reduced and maintained at the order of 10 4. From the results, the corresponding maximum rectification ratio values are respectively 1.36×10 5、9.07×104、5.43×104、4.82×104、5.64×104 when the grid voltages are 0.2V, 0.1V, 0V, -0.1V and-0.2V; it can be found that the regulation and control of the gate voltage are obvious for the regulation and control effect of the invention, the rectification ratio of the field effect transistor can reach more than 10 2 at 0.2V, the response speed is high, and the requirements of ITRS on HP and low power consumption (LP) can be met.
The foregoing has shown and described the basic principles, principal features and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that the above embodiments and descriptions are merely illustrative of the principles of the present invention, and various changes and modifications may be made without departing from the spirit and scope of the invention, which is defined in the appended claims. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (9)
1. A field effect transistor based on molybdenum ditelluride two-dimensional material, characterized in that: the molybdenum telluride-doped single-layer nano-sheet structure comprises molybdenum ditelluride channels, wherein each molybdenum ditelluride channel is of a molybdenum ditelluride single-layer nano-sheet structure, a single cell of the molybdenum ditelluride single-layer nano-sheet structure is composed of four rows of molybdenum ditelluride molecules, each row of molybdenum ditelluride molecules is composed of two molybdenum ditelluride molecules, the two molybdenum ditelluride molecules in each row are arranged along the Z direction, the two molybdenum atoms in each row of molybdenum ditelluride molecules are arranged along the Y direction, one tellurium atom in the second row of molybdenum ditelluride molecules is subjected to substitution doping, and the substituted tellurium atom is connected with the two molybdenum atoms in the second row of molybdenum ditelluride molecules and one molybdenum atom in the third row of molybdenum ditelluride molecules in a bonding manner; the left half part of the molybdenum ditelluride channel is of a substitution-doped molybdenum ditelluride single-layer nano sheet structure, the right half part of the molybdenum ditelluride channel is of an un-substitution-doped molybdenum ditelluride single-layer nano sheet structure, the left side and the right side of the upper surface of the molybdenum ditelluride channel are respectively connected with a source electrode and a drain electrode, the middle part of the upper surface of the molybdenum ditelluride channel is provided with a first isolation layer, and the upper surface of the first isolation layer is provided with a grid electrode; the left-right direction of the molybdenum ditelluride channel is Z direction, and the up-down direction of the molybdenum ditelluride channel is X direction.
2. A field effect transistor based on a molybdenum di-telluride two-dimensional material according to claim 1, characterized in that: the left side and the right side of the lower surface of the molybdenum ditelluride channel are respectively connected with a source electrode and a drain electrode, the middle part of the lower surface of the molybdenum ditelluride channel is provided with a second isolation layer, and the lower surface of the second isolation layer channel is provided with a second grid electrode, so that the double-grid field effect transistor is formed, the voltage of the first grid electrode is used for controlling the conductive property of the molybdenum ditelluride channel, and the second grid electrode is used for regulating the electric field distribution in the molybdenum ditelluride channel so as to influence the concentration of carriers in the molybdenum ditelluride channel.
3. A field effect transistor based on a molybdenum di-telluride two-dimensional material according to claim 1, characterized in that: and carrying out substitution doping on tellurium atoms to obtain one of N, P, as, sb, bi elements.
4. A field effect transistor based on a molybdenum di-telluride two-dimensional material according to claim 1, characterized in that: the first isolation layer and the second isolation layer are made of any one of SiO 2、SiC、SiN、HfO2、TiO2、Al2O3 and AlN.
5. A field effect transistor based on a molybdenum di-telluride two-dimensional material according to claim 1, characterized in that: the metal adopted by the grid electrode, the source electrode and the drain electrode is one or two of Au, cu, ti, cr, ag.
6. A field effect transistor based on a molybdenum di-telluride two-dimensional material according to claim 1, characterized in that: the gate electrode was in contact with the molybdenum ditelluride channel after being prepared by vertical hot wall chemical vapor deposition CVD, and the vacuum phase difference distance was set to 0.34065nm.
7. A field effect transistor based on a molybdenum di-telluride two-dimensional material according to claim 1, characterized in that: and (3) growing a silylene substrate layer on the lower surface of the molybdenum ditelluride channel in a vacuum environment.
8. A field effect transistor based on a molybdenum di-telluride two-dimensional material as defined in claim 7, wherein: growing a 10nm molybdenum ditelluride P-type heavily doped region and a molybdenum ditelluride N-type heavily doped region on the molybdenum ditelluride epitaxial layer by using a vertical hot wall Chemical Vapor Deposition (CVD) method, and forming a molybdenum ditelluride channel; and growing a 10nm silylene P-type heavily doped region and a silylene N-type heavily doped region on the silylene epitaxial layer by using a vertical hot wall Chemical Vapor Deposition (CVD) method, and forming a silylene substrate layer.
9. A field effect transistor based on a molybdenum di-telluride two-dimensional material as defined in claim 7, wherein: the silylene substrate layer is prepared from two-dimensional honeycomb silylene, and the silylene has a warpage single-layer six-membered ring structure.
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| Publication Number | Publication Date |
|---|---|
| CN118299429A true CN118299429A (en) | 2024-07-05 |
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