CN118263765A - Laser and optical module - Google Patents
Laser and optical module Download PDFInfo
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- CN118263765A CN118263765A CN202211737468.XA CN202211737468A CN118263765A CN 118263765 A CN118263765 A CN 118263765A CN 202211737468 A CN202211737468 A CN 202211737468A CN 118263765 A CN118263765 A CN 118263765A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0268—Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router"
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
- H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Optical Integrated Circuits (AREA)
Abstract
In the laser and the optical module provided by the application, the optical module comprises the laser; the laser comprises a substrate, wherein the surface of the substrate is sequentially provided with a grating region, a silicon waveguide region and a III-V waveguide region from bottom to top; the grating region comprises a first partition and a second partition; the silicon waveguide region comprises a first silicon tapered waveguide region, a second silicon tapered waveguide region and a third silicon tapered waveguide region; the III-V waveguide region comprises a III-V linear waveguide region, a first III-V graded waveguide region and a second III-V graded waveguide region; the laser provided by the application has an asymmetric waveguide coupling structure, and further the grating coupling coefficient of the grating region has a zoned difference, particularly the grating coupling coefficient of the first zone is larger than that of the second zone, so that the reflection at one side of the first zone is improved, the single-ended, high-power and single-wavelength output of the laser is realized, the optical power of the laser is further improved, and the power consumption is reduced.
Description
Technical Field
The present application relates to the field of optical communications technologies, and in particular, to a laser and an optical module.
Background
The realization of photoelectric conversion function by a silicon optical chip has become a mainstream scheme adopted at present for high-speed optical modules; since the silicon material used for the silicon optical chip is not an ideal light emitting material for the laser chip, and the light emitting unit cannot be integrated in the process of manufacturing the silicon optical chip, the silicon optical chip needs to be provided with light by an external light source, and an external laser is generally selected as the light source.
In recent years, hybrid integration technology is generally adopted to assemble a plurality of semiconductor chips to form hybrid integrated lasers, and most of common hybrid integrated lasers bond III-V lasers on silicon waveguides, and laser light in the III-V laser waveguides is introduced into the silicon waveguides by coupling to obtain the III-V/Si hybrid integrated lasers.
In a conventional III-V/Si hybrid integrated laser, a phase shift silicon grating structure is adopted to realize single wavelength output of the laser, and a III-V tapered waveguide and a silicon tapered waveguide with the same symmetry at both ends are utilized to realize optical coupling between an upper optical waveguide and a lower optical waveguide so as to realize laser coupling into a silicon waveguide below and provide a specific wavelength light source for devices such as a silicon modulator on a silicon optical integrated chip. The structure adopts the same conical waveguide structure at two sides of the phase-shift silicon grating to realize optical coupling and eliminate the influence of optical field reflection in the coupling process on the performance of the laser, so that the laser beam of the laser in the design form can realize the light output with the same power at two sides, however, in practical application, only one side of the laser beam can be used, thereby increasing the power consumption and reducing the light output power of the laser.
Disclosure of Invention
The application provides a laser and an optical module, which can realize that optical fields have different grating coupling coefficients at two end surfaces by adopting a uniform silicon grating and asymmetric waveguide coupling structure, thereby realizing single-ended optical output of the laser.
The present application provides a laser comprising:
A substrate;
The grating area is arranged on the surface of the substrate and comprises a first partition and a second partition positioned on one side of the first partition;
a silicon waveguide region disposed on the surface of the substrate, comprising:
the first silicon conical waveguide region is connected with one side of the first partition;
the second silicon conical waveguide area is connected with one side of the second partition;
the third silicon conical waveguide area is connected with one side of the second silicon conical waveguide area;
And a III-V waveguide region covering the grating region and the surface of the second silicon tapered waveguide region, comprising:
III-V linear waveguide area, cover and locate the said second regional surface in order to form the coupling coefficient of grating of second subregion;
The first III-V gradual change waveguide area is covered on the surface of the first subarea to form a first subarea grating coupling coefficient, is connected with one end of the III-V linear waveguide area, gradually reduces along the direction from the second subarea to the first subarea, and is used for increasing the first subarea grating coupling coefficient to realize that the first subarea grating coupling coefficient is larger than the second subarea grating coupling coefficient;
And the second III-V gradual change waveguide area is covered on the surface of the second silicon conical waveguide area, is connected with the other end of the III-V linear waveguide area, and is arranged in a manner that the width gradual decrease direction is opposite to the width gradual decrease direction of the second silicon conical waveguide area, and is used for enabling light to be coupled into the second silicon conical waveguide area and output.
The optical module provided by the application comprises the laser.
In the laser and the optical module provided by the application, the optical module comprises the laser; the laser comprises a substrate, wherein the surface of the substrate is sequentially provided with a grating region, a silicon waveguide region and a III-V waveguide region from bottom to top; the grating region comprises a first partition and a second partition for selecting light of a specific wavelength; the silicon waveguide area comprises a first silicon conical waveguide area, a second silicon conical waveguide area and a third silicon conical waveguide area, and specifically, one side of the first partition is provided with the first silicon conical waveguide area, and one side of the second partition is provided with the second silicon conical waveguide area and the third silicon conical waveguide area respectively; the III-V waveguide region comprises a III-V linear waveguide region, a first III-V graded waveguide region and a second III-V graded waveguide region, and specifically, the III-V linear waveguide region is arranged on the surface of the second partition; the first III-V graded waveguide region is arranged on the surface of the first partition region and is connected with one end of the III-V linear waveguide region; the second III-V graded waveguide region is arranged on the surface of the second silicon conical waveguide region; the width of the first III-V graded waveguide region is gradually reduced, the effective refractive index of the first III-V graded waveguide region is gradually reduced, more light fields are coupled to a first subarea of the grating region from the first III-V graded waveguide region, and then the grating coupling coefficient of the first subarea is increased, so that the reflection performance of the first subarea is enhanced, more light is coupled along the direction from the first subarea to the second subarea, and then the light is transmitted out along a third silicon conical waveguide region; meanwhile, the width gradually decreasing direction of the second III-V gradual changing waveguide region is opposite to the width gradually decreasing direction of the second silicon conical waveguide region, so that light is completely coupled to the second silicon conical waveguide region, the output light power of the side is increased, and then the light is transmitted along the third silicon conical waveguide region; in combination with the above, the laser provided by the application presents an asymmetric waveguide coupling structure, and further the grating coupling coefficient of the grating region presents a zoned difference, specifically, the grating coupling coefficient of the first zone is larger than that of the second zone, and further the reflection at one side of the first zone is improved, so that single-ended, high-power and single-wavelength output of the laser is realized, and further the optical power of the laser is improved, and the power consumption is reduced.
Drawings
In order to more clearly illustrate the technical solutions of the present disclosure, the drawings that need to be used in some embodiments of the present disclosure will be briefly described below, and it is apparent that the drawings in the following description are only drawings of some embodiments of the present disclosure, and other drawings may be obtained according to these drawings to those of ordinary skill in the art. Furthermore, the drawings in the following description may be regarded as schematic diagrams, not limiting the actual size of the products, the actual flow of the methods, the actual timing of the signals, etc. according to the embodiments of the present disclosure.
Fig. 1 is a connection diagram of an optical communication system according to some embodiments;
fig. 2 is a block diagram of an optical network terminal according to some embodiments;
FIG. 3 is a block diagram of an optical module according to some embodiments;
fig. 4 is an exploded view of a light module according to some embodiments;
FIG. 5 is a block diagram of a laser according to some embodiments;
FIG. 6 is a block diagram of a laser according to some embodiments;
FIG. 7 is a block diagram of a laser according to some embodiments;
FIG. 8 is a cross-sectional view of the interior of a laser according to some embodiments;
FIG. 9 is a schematic diagram of a laser growth process according to some embodiments;
fig. 10 is a schematic diagram of laser internal structure growth according to some embodiments.
Detailed Description
In an optical communication system, an optical signal is used to carry information to be transmitted, and the optical signal carrying the information is transmitted to an information processing device such as a computer through an information transmission device such as an optical fiber or an optical waveguide, so as to complete the transmission of the information. Since light has a passive transmission characteristic when transmitted through an optical fiber or an optical waveguide, low-cost, low-loss information transmission can be realized. Further, since a signal transmitted by an information transmission device such as an optical fiber or an optical waveguide is an optical signal and a signal that can be recognized and processed by an information processing device such as a computer is an electrical signal, it is necessary to perform mutual conversion between the electrical signal and the optical signal in order to establish an information connection between the information transmission device such as an optical fiber or an optical waveguide and the information processing device such as a computer.
The optical module realizes the function of interconversion between the optical signal and the electric signal in the technical field of optical communication. The optical module comprises an optical port and an electric port, the optical module realizes optical communication with information transmission equipment such as optical fibers or optical waveguides through the optical port, realizes electric connection with an optical network terminal (for example, optical cat) through the electric port, and the electric connection is mainly used for power supply, I2C signal transmission, data information transmission, grounding and the like; the optical network terminal transmits the electric signal to information processing equipment such as a computer through a network cable or wireless fidelity (Wi-Fi).
Fig. 1 is a connection diagram of an optical communication system. As shown in fig. 1, the optical communication system includes a remote server 1000, a local information processing device 2000, an optical network terminal 100, an optical module 200, an optical fiber 101, and a network cable 103.
One end of the optical fiber 101 is connected to the remote server 1000, and the other end is connected to the optical network terminal 100 through the optical module 200. The optical fiber itself can support long-range signal transmission, such as several kilometers (6 kilometers to 8 kilometers), on the basis of which, if a repeater is used, it is theoretically possible to achieve unlimited distance transmission. Thus, in a typical optical communication system, the distance between the remote server 1000 and the optical network terminal 100 may typically reach several kilometers, tens of kilometers, or hundreds of kilometers.
One end of the network cable 103 is connected to the local information processing device 2000, and the other end is connected to the optical network terminal 100. The local information processing apparatus 2000 may be any one or several of the following: routers, switches, computers, cell phones, tablet computers, televisions, etc.
The physical distance between the remote server 1000 and the optical network terminal 100 is greater than the physical distance between the local information processing apparatus 2000 and the optical network terminal 100. The connection between the local information processing apparatus 2000 and the remote server 1000 is completed by an optical fiber 101 and a network cable 103; and the connection between the optical fiber 101 and the network cable 103 is made by the optical module 200 and the optical network terminal 100.
The optical module 200 includes an optical port configured to access the optical fiber 101 such that the optical module 200 establishes a bi-directional optical signal connection with the optical fiber 101; the electrical port is configured to be accessed into the optical network terminal 100 such that the optical module 200 establishes a bi-directional electrical signal connection with the optical network terminal 100. The optical module 200 performs mutual conversion between optical signals and electrical signals, so that an information connection is established between the optical fiber 101 and the optical network terminal 100. Illustratively, the optical signal from the optical fiber 101 is converted into an electrical signal by the optical module 200 and then input to the optical network terminal 100, and the electrical signal from the optical network terminal 100 is converted into an optical signal by the optical module 200 and input to the optical fiber 101. Since the optical module 200 is a tool for implementing the mutual conversion between the optical signal and the electrical signal, it has no function of processing data, and the information is not changed during the above-mentioned photoelectric conversion process.
The optical network terminal 100 includes a substantially rectangular parallelepiped housing (housing), and an optical module interface 102 and a network cable interface 104 provided on the housing. The optical module interface 102 is configured to access the optical module 200, so that the optical network terminal 100 and the optical module 200 establish a bidirectional electrical signal connection; the network cable interface 104 is configured to access the network cable 103 such that the optical network terminal 100 establishes a bi-directional electrical signal connection with the network cable 103. A connection is established between the optical module 200 and the network cable 103 through the optical network terminal 100. Illustratively, the optical network terminal 100 transmits an electrical signal from the optical module 200 to the network cable 103, and transmits an electrical signal from the network cable 103 to the optical module 200, so that the optical network terminal 100, as a host computer of the optical module 200, can monitor the operation of the optical module 200. The upper computer of the Optical module 200 may include an Optical line terminal (Optical LINE TERMINAL, OLT) or the like in addition to the Optical network terminal 100.
The remote server 1000 establishes a bidirectional signal transmission channel with the local information processing device 2000 through the optical fiber 101, the optical module 200, the optical network terminal 100 and the network cable 103.
Fig. 2 is a block diagram of an optical network terminal, and fig. 2 shows only the configuration of the optical network terminal 100 related to the optical module 200 in order to clearly show the connection relationship between the optical module 200 and the optical network terminal 100. As shown in fig. 2, the optical network terminal 100 further includes a circuit board 300 disposed in the housing, a cage 106 disposed on a surface of the circuit board 300, a heat sink 107 disposed on the cage 106, and an electrical connector disposed inside the cage 106. The electrical connector is configured to access an electrical port of the optical module 200; the heat sink 107 has a convex portion such as a fin that increases the heat dissipation area.
The optical module 200 is inserted into the cage 106 of the optical network terminal 100, the optical module 200 is fixed by the cage 106, and heat generated by the optical module 200 is transferred to the cage 106 and then diffused through the heat sink 107. After the optical module 200 is inserted into the cage 106, the electrical port of the optical module 200 is connected with an electrical connector inside the cage 106, so that the optical module 200 and the optical network terminal 100 propose a bi-directional electrical signal connection. In addition, the optical port of the optical module 200 is connected to the optical fiber 101, so that the optical module 200 establishes a bi-directional optical signal connection with the optical fiber 101.
FIG. 3 is a block diagram of an optical module according to some embodiments; fig. 4 is an exploded view of a light module according to some embodiments; the optical module in the optical communication terminal in the foregoing embodiment is described below with reference to fig. 3 and 4. As shown in fig. 3 and 4, the optical module 200 provided in the embodiment of the application includes an upper housing 201, a lower housing 202, an unlocking member 203, an opening 204, an opening 205, a circuit board 300, a silicon optical chip 400, a light source 500, a first optical fiber ribbon 600, a second optical fiber ribbon 700 and an optical fiber interface 800, wherein the silicon optical chip 400 and the light source 500 are disposed on the same side surface of the circuit board 300.
The housing includes an upper housing 201 and a lower housing 202, the upper housing 201 being covered on the lower housing 202 to form the above-mentioned housing having two openings; the outer contour of the housing generally presents a square shape.
In some embodiments of the present disclosure, the lower housing 202 includes a bottom plate 2021 and two lower side plates 2022 disposed at both sides of the bottom plate 2021 and perpendicular to the bottom plate 2021; the upper housing 201 includes a cover 2011, and the cover 2011 is covered on two lower side plates 2022 of the lower housing 202 to form the housing.
In some embodiments, the lower housing 202 includes a bottom plate 2021 and two lower side plates 2022 disposed on both sides of the bottom plate 2021 and perpendicular to the bottom plate 2021; the upper housing 201 includes a cover 2011 and two upper side plates disposed on two sides of the cover 2011 and perpendicular to the cover 2011, and the two upper side plates are combined with two lower side plates 2022 to cover the upper housing 201 on the lower housing 202.
The direction in which the two openings 204 and 205 are connected may be the same as the longitudinal direction of the optical module 200 or may be different from the longitudinal direction of the optical module 200. For example, opening 204 is located at the end of light module 200 (right end of fig. 3) and opening 205 is also located at the end of light module 200 (left end of fig. 3). Or opening 204 is located at the end of light module 200 and opening 205 is located at the side of light module 200. The opening 204 is an electrical port, and the golden finger of the circuit board 300 extends out of the opening 204 and is inserted into a host computer (e.g., the optical network terminal 100); the opening 205 is an optical port configured to access the external optical fiber 101 such that the external optical fiber 101 connects to an optical transceiver component inside the optical module 200.
The assembly mode of combining the upper shell 201 and the lower shell 202 is adopted, so that devices such as the circuit board 300 and the optical transceiver component are conveniently installed in the shell, and packaging protection is formed on the devices by the upper shell 201 and the lower shell 202. In addition, when devices such as the circuit board 300 and the optical transceiver assembly are assembled, the positioning component, the heat dissipation component and the electromagnetic shielding component of the devices are convenient to deploy, and the automatic production implementation is facilitated.
In some embodiments, the upper housing 201 and the lower housing 202 are generally made of metal materials, which is beneficial to electromagnetic shielding and heat dissipation.
In some embodiments, the optical module 200 further includes an unlocking member 203 located outside the housing thereof, and the unlocking member 203 is configured to achieve a fixed connection between the optical module 200 and the host computer, or to release the fixed connection between the optical module 200 and the host computer.
Illustratively, the unlocking member 203 is located on the outer walls of the two lower side plates 2022 of the lower housing 202, with a snap-in member that mates with an upper computer cage (e.g., cage 106 of the optical network terminal 100). When the optical module 200 is inserted into the cage of the upper computer, the optical module 200 is fixed in the cage of the upper computer by the clamping component of the unlocking component; when the unlocking component is pulled, the clamping component of the unlocking component moves along with the unlocking component, so that the connection relation between the clamping component and the upper computer is changed, the clamping relation between the optical module 200 and the upper computer is relieved, and the optical module 200 can be pulled out of the cage of the upper computer.
The circuit board 300 includes circuit traces, electronic components and chips, which are connected together by the circuit traces according to a circuit design to realize functions such as power supply, electrical signal transmission, and grounding. The electronic components include, for example, capacitors, resistors, transistors, metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). The chips include, for example, a micro control unit (Microcontroller Unit, MCU), a laser driving chip, a limiting amplifier (LIMITING AMPLIFIER), a clock data recovery (Clock and Data Recovery, CDR) chip, a power management chip, a Digital Signal Processing (DSP) chip.
The circuit board 300 is generally a hard circuit board, and the hard circuit board can also realize a bearing function due to the relatively hard material, for example, the hard circuit board can stably bear the electronic components and chips; when the optical transceiver component is positioned on the circuit board, the hard circuit board can also provide stable bearing; the hard circuit board can also be inserted into an electrical connector in the upper computer cage.
The circuit board 300 further includes a gold finger formed on an end surface thereof, the gold finger being composed of a plurality of pins independent of each other. The circuit board 300 is inserted into the cage 106 and is conductively connected to the electrical connectors within the cage 106 by the gold fingers. The golden finger can be arranged on the surface of one side of the circuit board 300 (such as the upper surface shown in fig. 4) or on the surfaces of the upper side and the lower side of the circuit board 300, so as to adapt to the occasion with large pin number requirements. The golden finger is configured to establish electrical connection with the upper computer to achieve power supply, grounding, I2C signal transmission, data signal transmission and the like.
Of course, flexible circuit boards may also be used in some optical modules. The flexible circuit board is generally used in cooperation with the rigid circuit board to supplement the rigid circuit board. For example, a flexible circuit board may be used to connect the hard circuit board and the optical transceiver.
The silicon optical chip 400 itself has no light source, and the light source 500 serves as an external light source of the silicon optical chip 400. The light source 500 may be a laser box, a laser is packaged in the laser box, the laser emits light to generate a laser beam, the light source 500 is used for providing emitted laser to the silicon optical chip 400, the laser becomes a preferred light source for optical module and even optical fiber transmission with better single wavelength characteristic and better wavelength tuning characteristic, and other types of light such as LED light and the like are not generally adopted in common optical communication systems, even if the light source is adopted in special optical communication systems, the characteristics of the light source and the chip components of the light source have great differences with the laser, so that the optical module adopting the laser has great technical differences with the optical module adopting other light sources, and a person skilled in the art generally cannot consider that the two types of optical modules can mutually give technical instruction.
The light source 500 emits light through the side surface, and the emitted light enters the silicon photo chip 400. Silicon is used as a main substrate, silicon is not ideal luminescent material, and the light source cannot be integrated in the silicon optical chip 400, and the external light source 500 is required to provide the light source. The light provided by the light source 500 to the silicon optical chip is emission light with single wavelength and stable power, no data is carried, and the emission light is modulated by the silicon optical chip 400 to realize loading of the data into the emission light.
The light source 500 provides the laser light to the silicon optical chip 400 through a laser, the variety of the laser is more, in recent years, a plurality of semiconductor chips are assembled by adopting a hybrid integration technology to form a hybrid integrated laser, and a common hybrid integrated laser is obtained by bonding a group III-V laser on a silicon waveguide, and introducing laser light in the group III-V laser waveguide into the silicon waveguide by coupling.
In a conventional III-V/Si hybrid integrated laser, a phase shift silicon grating structure is adopted to realize single wavelength output of the laser, and a III-V tapered waveguide and a silicon tapered waveguide with the same symmetry at both ends are utilized to realize optical coupling between an upper optical waveguide and a lower optical waveguide so as to realize laser coupling into a silicon waveguide below and provide a specific wavelength light source for devices such as a silicon modulator on a silicon optical integrated chip. The structure adopts the same conical waveguide structure at two sides of the phase-shift silicon grating to realize optical coupling and eliminate the influence of optical field reflection in the coupling process on the performance of the laser, so that the laser beam of the laser in the design form can realize the light output with the same power at two sides, however, in practical application, only one side of the laser beam can be used, thereby increasing the power consumption and reducing the light output power of the laser.
Therefore, the laser 900 provided by the application is a hybrid integrated laser based on a uniform silicon grating and an asymmetric waveguide coupling structure, specifically, the hybrid integrated laser presents an asymmetric waveguide coupling structure, and further, grating coupling coefficients of grating regions present zoned differences, specifically, grating coupling coefficients of a first zone are larger than those of a second zone, and further, reflection at one side of the first zone is improved, so that single-ended, high-power and single-wavelength output of the laser is realized, and further, the optical power of the laser is improved, and power consumption is reduced.
FIG. 5 is a block diagram of a laser according to some embodiments; as shown in fig. 5, laser 900 includes a substrate, a grating region 910, a silicon waveguide region 920, and a III-V waveguide region 930; specifically, a grating region 910 is provided on the substrate, a silicon waveguide region 920 is provided at the end of the grating region 910, and a III-V waveguide region 930 is provided on the top layer; the III-V waveguide region 930 is disposed on the top surfaces of the grating region 910 and the silicon waveguide region 920, and the laser includes the III-V waveguide region 930, the grating region 910, the silicon waveguide region 920, and the substrate in that order from top to bottom. The III-V waveguide region 930 acts as a gain waveguide for generating a light beam having a plurality of wavelengths, and the grating region 910 has frequency selective characteristics that allow light of a particular wavelength to be selected from the light beam generated by the III-V waveguide region 930. The III-V waveguide region 930 is integrated on the grating region 910 and the silicon waveguide region 920, and laser generated by stimulated emission is perpendicularly incident on the grating region 910 and the silicon waveguide region 920 below, and after the selection of the grating region 910, the light enters the silicon waveguide for coupling transmission.
In the embodiment of the application, an SOI wafer (Silicon on Insulator, silicon on insulating layer) is selected as a substrate, SOI is a substrate material with a silicon-insulating layer-silicon layered structure, an oxide is filled between a top silicon wafer and a bottom silicon wafer to serve as an insulating layer, and isolation between a device on the surface of the top silicon wafer and the bottom silicon wafer is realized by using the insulating layer; as shown in fig. 10, the SOI wafer includes, in order from bottom to top, a silicon substrate layer 900a, a silicon oxide layer 900b, and a top silicon layer 900c, where a grating region 910 is formed by etching on the surface of the top silicon layer 900c of the SOI wafer, and then etching of a silicon waveguide is performed at both ends of the grating region 910, to form a silicon waveguide region 920.
As shown in fig. 5, the grating region 910 includes a first partition 911 and a second partition 912, and in an embodiment of the present application, the grating of the grating region 910 employs a uniform silicon grating, and the grating region 910 is used to select light of a specific wavelength.
The silicon waveguide region 920 includes a first silicon tapered waveguide region 921, a second silicon tapered waveguide region 922, and a third silicon tapered waveguide region 923. The taper tip of the first silicon taper waveguide region 921 is oriented in the same direction as the first partition 911 from the second partition 912, assuming that the orientation is referred to as being directed to the right, i.e., the taper tip of the first silicon taper waveguide region 921 is oriented to the right; the second silicon tapered waveguide region 922 and the third silicon tapered waveguide region 923 are connected, and in one embodiment of the application, the second silicon tapered waveguide region 922 and the third silicon tapered waveguide region 923 have opposite tapered tips, the second silicon tapered waveguide region 922 has a tapered tip facing to the right, and the third silicon tapered waveguide region 923 has a tapered tip facing to the left.
Grating region 910 and silicon waveguide region 920 are in the same layer, which is defined as the first layer for ease of description; specifically, one side of the first partition 911 is connected to the first silicon tapered waveguide region 921, one side of the second partition 912 is connected to the second silicon tapered waveguide region 922, and then the third silicon tapered waveguide region 923 is connected to the second silicon tapered waveguide region 922, that is, the second silicon tapered waveguide region 922 is disposed between the second partition 912 and the third silicon tapered waveguide region 923.
A III-V waveguide region 930 is bonded to the surface of the first layer; the III-V waveguide region 930 includes a III-V linear waveguide region 931, a first III-V graded waveguide region and a second III-V graded waveguide region, the first III-V graded waveguide region and the second III-V graded waveguide region being disposed on two sides of the III-V linear waveguide region 931, the first III-V graded waveguide region and the second III-V graded waveguide region having respective waveguide widths graded, the first III-V graded waveguide region having a direction in which the width is gradually reduced being disposed opposite to the direction in which the width of the second III-V graded waveguide region is gradually reduced; specifically, the III-V linear waveguide region 931 is disposed on the top surface of the second partition 912 to form a second partition grating coupling coefficient, and the first III-V graded waveguide region is disposed on the top surface of the first partition 911 to form a first partition grating coupling coefficient; because the first III-V graded waveguide region is arranged on the surface of the first partition 911, and the width of the first III-V graded waveguide region is gradually narrowed, more light fields are coupled to the surface of the first partition 911 from the first III-V graded waveguide region, so that the grating coupling coefficient of the first partition is larger than that of the second partition, more light are emitted along the direction from the first partition to the second partition, and unidirectional output is realized; the second III-V graded waveguide region stack is provided on the top surface of the second silicon tapered waveguide region 922. The longer length of the III-V linear waveguide region 931 can result in a larger optical gain for the light, so that the gain of the laser cavity can offset the cavity loss, thereby having a net gain, and thus the laser is continuously amplified in the cavity to generate laser.
In combination with the above, the second sections 912, III-V linear waveguide sections 931 are stacked to form the section A in FIG. 5; the first partition 911 is stacked with the first III-V graded waveguide region to form a B1 region in fig. 5; the first silicon tapered waveguide region 921 alone forms the C1 region in fig. 5; the second silicon tapered waveguide region 922 is stacked with the second III-V graded waveguide region, forming region B2 in fig. 5; the third silicon tapered waveguide region 923 alone forms region C2 of fig. 5.
In the embodiment of the present application, the cross sections of the first silicon tapered waveguide region 921, the second silicon tapered waveguide region 922 and the third silicon tapered waveguide region 923 are tapered, and the cross section widths of the first III-V graded waveguide region and the second III-V graded waveguide region are also graded; when the taper or waveguide width is graded, the equivalent refractive index is graded, so the optical field is also graded conversion, and the coupling loss can be reduced.
The area A is taken as the center, and the waveguide coupling structure of the area B1 is different from that of the area B2, so that the laser provided by the embodiment of the application presents an asymmetric waveguide coupling structure.
The first III-V graded waveguide region has a graded waveguide width, specifically, the waveguide width gradually decreases along the direction from the second partition 912 to the first partition 911, and when the waveguide width of the first III-V graded waveguide region gradually decreases along the direction because the effective refractive index changes with the waveguide width as an increasing function, the effective refractive index of the first III-V graded waveguide region gradually decreases along the direction, so that more light field is coupled from the first III-V graded waveguide region to the first partition 911 of the grating region, and further the grating coupling coefficient of the first partition 911 is increased, and the grating coupling coefficient is proportional to the reflectivity under the condition that the bandwidth and the center wavelength are unchanged, so that the reflection performance of the first partition 911 is further enhanced as the grating coupling coefficient of the first partition 911 is increased, and further more light is coupled along the direction from the first partition 911 to the second partition 912, and further the third silicon tapered waveguide region 923 is transmitted.
In combination with the above, the grating coupling coefficient of the grating region 910 shows a zoned difference, specifically, the grating coupling coefficient of the first zone 911 is greater than that of the second zone 912, so as to improve the reflection at one side of the first zone 911, thereby realizing single-ended and single-wavelength output of the laser; the end of the CI area has a light output end, and the C2 area has a light output end, and since the grating coupling coefficient of the first division 911 is greater than that of the second division 912, the reflection at the side of the first division 911 is further improved, so that more light is output from the light output end of the C2 area, and little light is output from the light output end of the C1 area, that is, the output light power at the C2 side is greater than that at the C1 side.
The width decreasing direction of the second III-V graded waveguide region is opposite to the width decreasing direction of the second silicon tapered waveguide region 922, that is, the taper points of the two are opposite to each other, that is, the width decreasing direction of the second III-V graded waveguide region is opposite to the width decreasing direction of the second silicon tapered waveguide region 922, and the two regions adopt adiabatic coupling structures with gradually changed widths so as to fully couple light to the second silicon tapered waveguide region, increase the output optical power of the side, and then transmit along the third silicon tapered waveguide region. Specifically, the waveguide width of the second III-V graded waveguide region is graded, specifically, in the direction from the second partition 912 to the first partition 911, the waveguide width thereof is gradually increasing, that is, in the direction toward the third silicon tapered waveguide region 923, the waveguide width thereof is gradually decreasing, and in the direction toward the third silicon tapered waveguide region 923, the effective refractive index of the second III-V graded waveguide region is gradually decreasing, so that more light field is coupled from the second III-V graded waveguide region to the second silicon tapered waveguide region 922, and at the same time, in the direction toward the third silicon tapered waveguide region 923, the second silicon tapered waveguide region 922 is gradually increasing, and in the direction toward the third silicon tapered waveguide region 923, the effective refractive index of the second silicon tapered waveguide region 922 is gradually increasing, so that more light field is coupled from the second III-V graded waveguide region to the second silicon tapered waveguide region 922; therefore, when the width decreasing direction of the second III-V graded waveguide region is opposite to the width decreasing direction of the second silicon tapered waveguide region 922, the effective refractive index of the second III-V graded waveguide region gradually decreases along the direction toward the third silicon tapered waveguide region 923, and the effective refractive index of the second silicon tapered waveguide region 922 gradually increases, and the effect obtained by the superposition of the two is that: light is almost completely coupled from the second III-V graded waveguide region into the second silicon tapered waveguide region 922 region, increasing the output optical power on the side of the C2 region, and then transmitted out along the third silicon tapered waveguide region 923.
In combination with the above, the width decreasing direction of the second III-V graded waveguide region and the width decreasing direction of the second silicon tapered waveguide region 922 are opposite, so that light is completely coupled to the second silicon tapered waveguide region, the output light power of the side is increased, and then the light is transmitted along the third silicon tapered waveguide region, thereby realizing single-side high-power output of the laser, further improving the light power of the laser, and reducing the power consumption.
The first silicon tapered waveguide area 921 alone forms the C1 area in fig. 5, the waveguide width of the first silicon tapered waveguide area 921 gradually decreases along the direction from the second partition 912 to the first partition 911, as the waveguide width becomes smaller, the equivalent refractive index of the optical field becomes smaller and smaller, the refractive index of the optical field approaches to that of the external SiO 2, and the reflection at the end is smaller, so that the light output from the C1 end is prevented from returning to the inside of the laser along the original path, and the output performance of the laser is prevented from being affected.
The third silicon tapered waveguide region 923 alone forms the region C2 in fig. 5, and the first silicon tapered waveguide region 921 gradually decreases in waveguide width in the direction from the first partition 911 to the second partition 912, and decreases to a single-mode waveguide, so as to be connected with a modulator and other devices on the silicon optical chip, and provide a single-mode high-power light source for the silicon optical integrated chip.
The widths of the cross sections of the first III-V graded waveguide area and the second III-V graded waveguide area are also graded, and when the widths of the waveguides are graded, the equivalent refractive indexes of the waveguides are graded, so that the optical field is also graded conversion, and the coupling loss can be reduced; based on this, in one embodiment of the present application, as shown in fig. 5, the first III-V graded waveguide region is a first III-V tapered waveguide 932 and the second III-V graded waveguide region is a second III-V tapered waveguide 933. The taper tip orientation of the first III-V tapered waveguide 932 coincides with the taper tip orientation of the first silicon tapered waveguide region 921, and the taper tip orientation of the second III-V tapered waveguide 933 is disposed opposite the taper tip orientation of the second silicon tapered waveguide region 922.
The first III-V graded waveguide region and the second III-V graded waveguide region can also adopt a piecewise graded structure according to the coupling design of the optical field; the efficiency of the tapered waveguide is determined by the gradient slope of the tapered waveguide, the gradient slope of any tapered waveguide has a fixed value, but the distribution characteristics of the optical field are often not uniformly changed, so that the gradient slopes of the tapered waveguides at different positions are different, and the multi-section gradient structure can set different gradient slopes according to different optical field characteristics, so that the optimal value is realized, and the coupling efficiency is further improved; in one embodiment of the present application, fig. 6 is a block diagram of a laser according to some embodiments, and as shown in fig. 6, the first III-V graded waveguide region includes a first III-V trapezoidal waveguide 932a and a first III-V tapered waveguide 932b in sequence; the second III-V graded waveguide region includes, in order, a second III-V trapezoidal waveguide 933a and a second III-V tapered waveguide 933b. Of course, the graded waveguide region adopts other forms of segmented structures, and is also within the scope of the present application.
In combination with the above, the laser provided by the application presents an asymmetric waveguide coupling structure, and further the grating coupling coefficient of the grating region presents a zoned difference, specifically, the grating coupling coefficient of the first zone is larger than that of the second zone, and further the reflection at one side of the first zone is improved, so that the single-ended, high-power and single-wavelength output of the laser is realized, and further the optical power of the laser is improved, and the power consumption is reduced.
The present application provides specific asymmetric coupling structures to efficiently couple light in the III-V active region into the silicon waveguide.
The embodiment of the application realizes the single-ended high-power and single-mode output characteristics of the laser by adopting the uniform silicon grating and the asymmetric waveguide coupling structure.
FIG. 9 is a schematic diagram of a laser growth process according to some embodiments; as shown in fig. 9, a grating region 910 is obtained by etching and growing on the surface of the top silicon layer 900c of the SOI wafer, a first silicon tapered waveguide region 921 and a second silicon tapered waveguide region 922 are epitaxially grown on both sides of the grating region 910, and then a third silicon tapered waveguide region 923 is epitaxially grown on one side of the second silicon tapered waveguide region 922, so that the grating region 910 and the silicon waveguide region 920 are obtained on the surface of the top silicon layer 900 c.
III-V waveguides are then bonded to the upper surfaces of grating region 910 and silicon waveguide region 920, specifically III-V linear waveguide region 931 is etched to the upper surface of second region 912 of grating region 910, then first III-V tapered waveguide 932 is etched to the upper surface of first region 911, and second III-V tapered waveguide 933 is etched to the upper surface of second silicon tapered waveguide region 922, thus obtaining III-V waveguide region 930 on the upper surfaces of grating region 910 and silicon waveguide region 920.
In one embodiment of the present application, the bonding process is used for the bonding process of heterogeneous material hybrid integration, bonding can be achieved through a polymer material benzocyclobutene (BCB), and BCB has low dielectric constant, excellent thermal, chemical and mechanical stability, and when used for polymer bonding between wafers, the main advantages include: good self-planarization ability; the curing temperature is low; BCB can be photoetched, etched, etc.; spin-coating liquid BCB solution on a silicon substrate, specifically on the surfaces of a grating area 910 and a silicon waveguide area 920, then inversely attaching a III-V waveguide wafer on the silicon wafer coated with the BCB, heating and pressurizing in a vacuum environment, and because the BCB has thermosetting property, polymerizing the heated BCB molecules, changing the heated BCB into a solid polymer, and tightly bonding the two heterogeneous materials together. The resulting laser according to fig. 9 is structured in a top view, i.e. fig. 7, fig. 7 being a block diagram of a laser according to some embodiments.
FIG. 10 is a schematic diagram of the growth of the internal structure of a laser according to some embodiments, as shown in FIG. 10, on the top silicon layer surface of an SOI wafer, etching and growing to obtain a grating region 910 and a silicon waveguide region 920, and then bonding a III-V waveguide region 930 on the upper surfaces of the grating region 910 and the silicon waveguide region 920; the III-V material generally adopts an InP-based multi-quantum well or multi-quantum dot structure, and is used as a gain medium of a laser, and is functionally divided into four layers: the first layer is an ohmic contact layer which is generally a P-type InGaAs material with high doping concentration and is used for realizing good ohmic contact with electrode metal; the second layer is an upper limiting layer which is mainly made of P-type doped InP material and has a certain thickness for limiting the optical field of the active layer; the third layer is an active layer, which is generally based on InGaAsP or InAlGaAs multilayer quantum well materials for providing optical gain; the fourth layer is an N-type contact layer, which is typically based on an N-type doped InP material, and is used to limit the optical field of the active layer while being in contact with the N-type contact electrode, providing electrical injection. FIG. 8 is a cross-sectional view of the interior of a laser according to some embodiments; fig. 10 is a schematic growth diagram of an internal structure of a laser according to some embodiments, and in combination with fig. 8 and 10, a III-V waveguide region 930 includes an N-type contact layer 903, an active layer 904, an upper confinement layer 905, and an ohmic contact layer 906 in order from bottom to top; then plating a P-type contact electrode 901 on the surface of the ohmic contact layer 906, and respectively plating N-type contact electrodes 902 on two sides of the surface of the N-type contact layer 903; the width of the N-type contact layer 903 is greater than the width of the remaining layers, and the N-type contact layer 903 is used to support the active layer 904, the upper limiting layer 905, and the ohmic contact layer 906, and is also used to support the N-type contact electrode 902, where in some embodiments of the present application, the N-type contact electrode 902 is disposed on the surface of the N-type contact layer 903 and on both sides of the active layer 904; the height of the upper confinement layer 905 is greater in height than the rest of the layers.
In summary, in the laser and the optical module provided by the application, the optical module comprises the laser; the laser provided by the application has an asymmetric waveguide coupling structure, and further the grating coupling coefficient of the grating region has a zoned difference, particularly the grating coupling coefficient of the first zone is larger than that of the second zone, so that the reflection at one side of the first zone is improved, the single-ended, high-power and single-wavelength output of the laser is realized, the optical power of the laser is further improved, and the power consumption is reduced.
The application adopts the uniform silicon grating and the asymmetric waveguide coupling structure to realize different grating coupling coefficients of the optical field at two end surfaces, and improves the reflection at one side of the optical field, thereby realizing single-ended high-power single-wavelength output of the laser, improving the optical power of the chip and reducing the power consumption.
It should be noted that in this specification, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a light path structure, associated device, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed. Without further limitation, the statement "comprises one … …" defines an element that does not preclude the presence of additional identical elements in the optical path structure, related devices or equipment comprising the element.
The embodiments of the present application described above do not limit the scope of the present application.
Claims (10)
1. A laser, comprising:
A substrate;
The grating area is arranged on the surface of the substrate and comprises a first partition and a second partition positioned on one side of the first partition;
a silicon waveguide region disposed on the surface of the substrate, comprising:
the first silicon conical waveguide region is connected with one side of the first partition;
the second silicon conical waveguide area is connected with one side of the second partition;
the third silicon conical waveguide area is connected with one side of the second silicon conical waveguide area;
And a III-V waveguide region covering the grating region and the surface of the second silicon tapered waveguide region, comprising:
III-V linear waveguide area, cover and locate the said second regional surface in order to form the coupling coefficient of grating of second subregion;
The first III-V gradual change waveguide area is covered on the surface of the first subarea to form a first subarea grating coupling coefficient, is connected with one end of the III-V linear waveguide area, gradually reduces in width along the direction from the second subarea to the first subarea and is used for increasing the first subarea grating coupling coefficient;
And the second III-V gradual change waveguide area is covered on the surface of the second silicon conical waveguide area, is connected with the other end of the III-V linear waveguide area, and is arranged in a manner that the width gradual decrease direction is opposite to the width gradual decrease direction of the second silicon conical waveguide area, and is used for enabling light to be coupled into the second silicon conical waveguide area and output.
2. The laser of claim 1, wherein the first silicon tapered waveguide region has a first light output end and the third silicon tapered waveguide region has a second light output end;
the output optical power of the second optical output end is larger than that of the first optical output end.
3. The laser of claim 1, wherein the first silicon tapered waveguide region has a width that tapers in a direction from the second region to the first region and has an area that is smaller than an area of the second silicon tapered waveguide region or the third silicon tapered waveguide region;
The width of the second silicon conical waveguide region gradually decreases along the direction from the second partition to the first partition;
The third tapered silicon waveguide region has a width that increases in a direction from the second region to the first region.
4. The laser of claim 1, wherein the first III-V graded waveguide region comprises a first III-V tapered waveguide;
the second III-V tapered waveguide region includes a second III-V tapered waveguide.
5. The laser of claim 1, wherein the first III-V graded waveguide region comprises, in order, a first III-V trapezoidal waveguide and a first III-V tapered waveguide;
The second III-V graded waveguide region sequentially comprises a second III-V trapezoidal waveguide and a second III-V tapered waveguide.
6. The laser of claim 1, wherein the first partitioned grating coupling coefficient is greater than the second partitioned grating coupling coefficient.
7. The laser of claim 1, wherein the III-V waveguide region comprises, in order from top to bottom:
An ohmic contact layer, the top surface of which is provided with a P-type contact electrode;
An upper confinement layer having a height greater than a height of the ohmic contact layer;
An active layer;
The width of the N-type contact layer is larger than that of the ohmic contact layer, the upper limiting layer or the active layer, and N-type contact electrodes are respectively arranged on the surfaces of the N-type contact layer and the upper limiting layer or the active layer and respectively positioned on the two sides of the active layer.
8. The laser of claim 1, wherein the first and second sections are each provided with a uniform silicon grating.
9. The laser of claim 1, wherein the substrate is a top silicon layer of an SOI wafer;
the SOI wafer comprises the following components in sequence from bottom to top:
A silicon substrate layer;
A silicon oxide layer;
and the surface of the top silicon layer is etched to form the first subarea, the second subarea, the first silicon conical waveguide area, the second silicon conical waveguide area and the third silicon conical waveguide area.
10. An optical module comprising the laser of any one of claims 1 to 9.
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| CN202211737468.XA CN118263765A (en) | 2022-12-27 | 2022-12-27 | Laser and optical module |
| PCT/CN2023/081583 WO2024138884A1 (en) | 2022-12-27 | 2023-03-15 | Laser device and optical module |
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| WO2010091688A1 (en) * | 2009-02-11 | 2010-08-19 | Danmarks Tekniske Universitet | Hybrid vertical-cavity laser |
| US8625942B2 (en) * | 2011-03-30 | 2014-01-07 | Intel Corporation | Efficient silicon-on-insulator grating coupler |
| JP6275841B2 (en) * | 2013-12-27 | 2018-02-07 | インテル・コーポレーション | Asymmetric optical waveguide grating resonator and DBR laser |
| CN106154442B (en) * | 2016-09-20 | 2019-01-08 | 青岛海信宽带多媒体技术有限公司 | Optical module and its manufacturing method |
| US10162199B2 (en) * | 2016-11-21 | 2018-12-25 | Oracle International Corporation | Wavelength-tunable III-V/Si hybrid optical transmitter |
| CN106848813B (en) * | 2017-03-27 | 2019-10-29 | 武汉电信器件有限公司 | One kind is based on the insensitive laser structure of SOI hybrid integrated heat and production method |
| CN106898947B (en) * | 2017-04-05 | 2020-05-22 | 青岛海信宽带多媒体技术有限公司 | Laser and manufacturing method thereof |
| CN108110605B (en) * | 2017-06-23 | 2020-06-30 | 青岛海信宽带多媒体技术有限公司 | Silicon-based laser |
| JP7206393B2 (en) * | 2019-01-04 | 2023-01-17 | 華為技術有限公司 | Semiconductor lasers, optical transmission components, optical line terminals and optical network units |
| CN112152081B (en) * | 2020-11-26 | 2021-02-19 | 武汉敏芯半导体股份有限公司 | Hybrid integrated resonant cavity laser and preparation method thereof |
| CN113644542B (en) * | 2021-07-15 | 2023-03-24 | 上海交通大学 | Frequency stabilizing and frequency regulating laser based on erbium-doped lithium niobate film and preparation method thereof |
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