CN118263091A - Method for repairing lattice defects on surface of wafer epitaxial wafer - Google Patents
Method for repairing lattice defects on surface of wafer epitaxial wafer Download PDFInfo
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- CN118263091A CN118263091A CN202211675344.3A CN202211675344A CN118263091A CN 118263091 A CN118263091 A CN 118263091A CN 202211675344 A CN202211675344 A CN 202211675344A CN 118263091 A CN118263091 A CN 118263091A
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- 238000000034 method Methods 0.000 title claims abstract description 49
- 230000007547 defect Effects 0.000 title claims abstract description 29
- 239000000460 chlorine Substances 0.000 claims abstract description 38
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 33
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000011737 fluorine Substances 0.000 claims abstract description 16
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 16
- 230000001590 oxidative effect Effects 0.000 claims abstract description 9
- 238000009832 plasma treatment Methods 0.000 claims description 38
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 24
- 229910015844 BCl3 Inorganic materials 0.000 claims description 3
- 229910003910 SiCl4 Inorganic materials 0.000 claims description 3
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 3
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 2
- 230000004907 flux Effects 0.000 claims description 2
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 58
- 238000005530 etching Methods 0.000 abstract description 45
- 210000002381 plasma Anatomy 0.000 abstract description 22
- 230000008569 process Effects 0.000 abstract description 21
- 239000010410 layer Substances 0.000 abstract description 18
- 239000002344 surface layer Substances 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 118
- 238000009616 inductively coupled plasma Methods 0.000 description 28
- 229910002601 GaN Inorganic materials 0.000 description 13
- 239000001307 helium Substances 0.000 description 9
- 229910052734 helium Inorganic materials 0.000 description 9
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 9
- 239000000112 cooling gas Substances 0.000 description 7
- 239000000498 cooling water Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000008439 repair process Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007648 laser printing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Abstract
The invention relates to the field of semiconductor chip production, in particular to a method for repairing lattice defects on the surface of a wafer epitaxial wafer. The invention provides a method for repairing lattice defects on the surface of a wafer epitaxial wafer. The method provided by the invention uses the plasmas of oxidizing gases such as N 2 O or O 2 to treat the surface of the wafer epitaxial wafer to form a uniform oxide layer; treating the surface of the oxide layer by using a chlorine-based gas such as BCl 3 plasma to uniformly remove the oxide surface layer; the mixed gas of the chlorine-based gas and the fluorine-based gas or the chlorine-based gas plasma is adopted to etch the surface of the material, so that the etching defect and damage caused by lattice defects or oxidized spots generated in the epitaxial growth process of the surface layer of the wafer epitaxial wafer can be effectively optimized, and the wafer epitaxial wafer with high uniformity and consistency can be obtained; compared with the prior art, the wafer epitaxial wafer surface crystal lattice defect layer removing effect is better.
Description
Technical Field
The invention relates to the field of semiconductor chip production, in particular to a method for repairing lattice defects on the surface of a wafer epitaxial wafer.
Background
The gallium nitride-based semiconductor material has the advantages of wide gap, high luminous efficiency, high temperature resistance, stable chemical property and the like, and is widely applied to the fields of solid-state lighting, full-color display, laser printing and the like.
Gallium nitride films are usually grown on heterogeneous substrates, and larger lattice mismatch and thermal mismatch exist between the substrates and the epitaxial films, so that piezoelectric polarization effect can be caused on one hand, and the luminous efficiency of a quantum well is reduced; on the other hand, the film is always acted by stress in the deposition process, so that the epitaxial wafer is bent, warped and even cracked. When the u-gallium nitride grows, the epitaxial wafer is subjected to stress due to larger lattice mismatch between the substrate and the epitaxial film, so that 'concave' deformation is generated; and because of the influence of thermal mismatch, the absolute value of curvature is continuously reduced and even becomes 'convex' deformation when the multiple quantum wells with lower growth temperature are grown.
The plasma etching is a process of forming volatile matters or directly bombarding the surface of a sample by utilizing the action of atoms, molecules and material surfaces in a plasma state, and can realize anisotropic etching, namely the longitudinal etching rate is far greater than the transverse etching rate, so that the fidelity of the transferred fine patterns is ensured. Inductively Coupled Plasma (ICP) etching technology in plasma etching is increasingly applied to semiconductor device manufacturing due to the advantages of high control accuracy, good large-area etching uniformity, less pollution and the like. However, in the prior art, if the chlorine-based gas is directly used to etch the gallium nitride wafer epitaxial wafer, the lattice defect layer on the surface of the gallium nitride epitaxial wafer is not effectively removed, and the gallium nitride epitaxial wafer with high uniformity and consistency cannot be obtained.
Disclosure of Invention
In view of the above, the technical problem to be solved by the present invention is to provide a method for repairing lattice defects on the surface of a wafer epitaxial wafer, which can effectively repair lattice defects generated on the surface of an epitaxial wafer in the process of growing the wafer by polycrystalline epitaxy, so as to obtain an epitaxial wafer with high uniformity and consistency.
The invention provides a method for repairing lattice defects on the surface of a wafer epitaxial wafer, which comprises the following steps:
S1) carrying out plasma treatment on a wafer epitaxial wafer by adopting oxidizing gas to form an oxide layer on the surface of the wafer epitaxial wafer;
s2) carrying out plasma treatment on the wafer epitaxial wafer subjected to the plasma treatment in the step S1) by adopting chlorine-based gas, so that an oxide layer on the surface of the wafer epitaxial wafer is removed;
And S3) carrying out plasma treatment on the wafer epitaxial wafer subjected to the plasma treatment in the step S2) by adopting mixed gas of chlorine-based gas and fluorine-based gas or chlorine-based gas, so that lattice defects on the surface of the wafer epitaxial wafer are repaired.
The method for repairing the lattice defects on the surface of the wafer epitaxial wafer can be used for repairing different wafer epitaxial wafers, and can also effectively repair the lattice defects on the surface of the epitaxial wafer generated in the process of epitaxially growing the epitaxial wafer by the wafer, so that the epitaxial wafer with high uniformity and consistency is obtained. In certain embodiments of the present invention, the wafer includes, but is not limited to, at least one of gallium nitride, gallium oxide, gallium arsenide, aluminum gallium arsenide, and the like.
In the step S1) of the present invention, first, a wafer epitaxial wafer is subjected to a plasma treatment using an oxidizing gas to form an oxide layer on the surface of the wafer epitaxial wafer. Specifically, in the step S1), the present invention ionizes the oxidizing gas into plasma by performing plasma treatment, and the plasma oxidizes the surface layer of the wafer epitaxial wafer to form a uniformly oxidized surface layer on the surface of the wafer epitaxial wafer.
In some embodiments of the present invention, in step S1), plasma treatment is performed by using an inductively coupled plasma etcher to ionize the oxidizing gas into plasma, where the plasma oxidizes the surface layer of the wafer epitaxial wafer, so that a uniformly oxidized surface layer is formed on the surface of the wafer epitaxial wafer; the wafer epitaxial wafer can be directly placed on the lower electrode of the etching chamber of the inductively coupled plasma etching machine, or can be placed on the lower electrode of the etching chamber of the inductively coupled plasma etching machine after being stuck on a silicon wafer or a tray through a heat conducting medium to carry out slide glass; the heat conducting medium is at least one selected from silicone oil or paraffin. In one embodiment, the oxidizing gas in step S1) is selected from at least one of N 2 O or O 2.
In certain embodiments of the present invention, the conditions of the plasma treatment in step S1) are: the pressure is 5 mT-80 mT; the upper radio frequency Power is 50-500 Source Power; the lower radio frequency Power is 0Bias Power. In one embodiment, the plasma treatment in step S1) is performed by using an inductively coupled plasma etcher, and the pressure of the reaction chamber of the inductively coupled plasma etcher is 5mT to 80mT; the upper radio frequency Power of the inductively coupled plasma etching machine is 50-500 Source Power, and the lower radio frequency Power of the inductively coupled plasma etching machine is 0Bias Power; the temperature of the lower electrode of the inductively coupled plasma etching machine is-20-60 ℃; the cooling water temperature of the inductively coupled plasma etching machine is 15-25 ℃, preferably 20 ℃. In one embodiment, the back helium pressure of the wafer in step S1) is 5Torr to 10Torr; the back helium pressure of the wafer refers to the pressure of the back cooling gas helium of the wafer.
In the step S2), after the oxide layer is formed on the surface of the wafer epitaxial wafer, the wafer epitaxial wafer after the plasma treatment in the step S1) is subjected to the plasma treatment by using the chlorine-based gas, so that the oxide layer on the surface of the wafer epitaxial wafer is removed. Specifically, in the step S2), the present invention ionizes the chlorine-based gas into plasma by performing plasma treatment, and the plasma removes the oxide layer on the wafer epitaxial wafer surface after the plasma treatment in the step S1).
In certain embodiments of the present invention, the inductively coupled plasma etcher is used to perform plasma processing in step S2) to ionize the chlorine-based gas into a plasma that uniformly removes the oxide layer on the wafer epitaxial wafer surface after the plasma processing in step S1). In one embodiment, the chlorine-based gas in step S2) is selected from at least one of Cl 2、BCl3、SiCl4. In one embodiment, the chlorine-based gas in step S2) is BCl 3, and the inductively coupled plasma etching machine is used to perform plasma treatment to ionize BCl 3 into plasma, where the plasma uniformly removes the oxide layer on the surface of the wafer epitaxial wafer after the plasma treatment in step S1).
In some embodiments of the present invention, the conditions of the plasma treatment in the step S2) are: the pressure is 5 mT-80 mT; the upper radio frequency Power is 50-500 Source Power; the lower radio frequency Power is 0Bias Power to 200Bias Power. In one embodiment, the plasma treatment in step S2) is performed by using an inductively coupled plasma etcher, and the pressure of the reaction chamber of the inductively coupled plasma etcher is 5mT to 80mT; the upper radio frequency Power of the inductively coupled plasma etching machine is 50-500 Source Power, and the lower radio frequency Power of the inductively coupled plasma etching machine is 0-200 Bias Power; the temperature of the lower electrode of the inductively coupled plasma etching machine is-20-60 ℃; the cooling water temperature of the inductively coupled plasma etching machine is 15-25 ℃, preferably 20 ℃. In one embodiment, the wafer in step S2) has a back helium pressure of 5Torr to 10Torr; the back helium pressure of the wafer refers to the pressure of the back cooling gas helium of the wafer.
In the step S3), after the oxide layer on the surface of the wafer epitaxial wafer is removed, the wafer epitaxial wafer subjected to plasma treatment in the step S2) is subjected to plasma treatment by adopting mixed gas of chlorine-based gas and fluorine-based gas or chlorine-based gas, so that the lattice defect on the surface of the wafer epitaxial wafer is repaired. Specifically, in the step S3), the present invention ionizes the mixed gas of the chlorine-based gas and the fluorine-based gas or the chlorine-based gas into plasma by performing the plasma treatment, and the plasma restores the lattice defect on the wafer epitaxial wafer surface after the plasma treatment in the step S2).
In some embodiments of the present invention, in step S3), the inductively coupled plasma etcher is used to perform plasma treatment to ionize the mixed gas of chlorine-based gas and fluorine-based gas or chlorine-based gas into plasma, and the plasma restores the lattice defect on the surface of the wafer epitaxial wafer after the plasma treatment in step S2). In some embodiments, in step S3), the chlorine-based gas is selected from at least one of Cl 2、BCl3、SiCl4; the fluorine-based gas is at least one selected from CHF 3、CF4、SF6. In some embodiments, the gas flux of the mixed gas of chlorine-based gas and fluorine-based gas or the chlorine-based gas in step S3) is less than 150sccm. In one embodiment, in the step S3), the mixed gas of the chlorine-based gas and the fluorine-based gas is used to perform the plasma treatment on the wafer epitaxial wafer after the plasma treatment in the step S2), and the fluorine-based gas accounts for 10% -30% of the gas flow rate of the mixed gas.
In some embodiments of the present invention, the conditions of the plasma treatment in the step S3) are as follows: the pressure is 5 mT-80 mT; the upper radio frequency Power is 50-500 Source Power; the lower radio frequency Power is 0Bias Power to 200Bias Power. In one embodiment, the plasma treatment in step S3) is performed by using an inductively coupled plasma etcher, and the pressure of the reaction chamber of the inductively coupled plasma etcher is 5mT to 80mT; the upper radio frequency Power of the inductively coupled plasma etching machine is 50-500 Source Power, and the lower radio frequency Power of the inductively coupled plasma etching machine is 0-200 Bias Power; the temperature of the lower electrode of the inductively coupled plasma etching machine is-20-60 ℃; the cooling water temperature of the inductively coupled plasma etching machine is 15-25 ℃, preferably 20 ℃. In one embodiment, the back helium pressure of the wafer in step S3) is 5Torr to 10Torr; the back helium pressure of the wafer refers to the pressure of the back cooling gas helium of the wafer.
In certain embodiments of the present invention, the present invention employs an inductively coupled plasma etching system to perform the processes of steps S1), S2) and S3), and the reactive gases used in the processes of steps S1), S2) and S3) include, but are not limited to, combinations of the above gases.
The invention can also repeatedly execute the step S2) and the step S3) according to the actual situation of lattice mismatch of the surface to be etched of the wafer epitaxial wafer. In some embodiments of the present invention, the wafer epitaxial wafer is a gallium nitride wafer epitaxial wafer, the gallium nitride wafer epitaxial wafer is subjected to lattice defect repair according to the method of the present invention, and the step S2) and the step S3) are repeatedly performed according to the actual situation of lattice mismatch of the surface to be etched of the gallium nitride wafer epitaxial wafer, so as to obtain a gallium nitride epitaxial wafer with high uniformity and consistency.
The invention provides a method for repairing lattice defects on the surface of a wafer epitaxial wafer. The method provided by the invention uses the plasmas of oxidizing gases such as N 2 O or O 2 to treat the surface of the wafer epitaxial wafer to form a uniform oxide layer; treating the surface of the oxide layer by using a chlorine-based gas such as BCl 3 plasma to uniformly remove the oxide surface layer; the mixed gas of the chlorine-based gas and the fluorine-based gas or the chlorine-based gas plasma is adopted to etch the surface of the material, so that the etching defect and damage caused by lattice defects or oxidized spots generated in the epitaxial growth process of the surface layer of the wafer epitaxial wafer can be effectively optimized, and the wafer epitaxial wafer with high uniformity and consistency can be obtained; taking the repair of the gallium nitride wafer epitaxial wafer as an example, the process principle of the invention is shown in fig. 1, fig. 1 is a schematic diagram of the method for etching the lattice defects on the surface of the gallium nitride wafer epitaxial wafer, and compared with the prior art, the method for removing the lattice defect layer on the surface of the wafer epitaxial wafer has better effect.
Drawings
FIG. 1 is a schematic diagram of a method of etching lattice defects on the surface of an epitaxial wafer of a gallium nitride wafer according to the present invention;
FIG. 2 is a diagram of an electron microscope of an epitaxial wafer of gallium nitride wafer;
FIG. 3 is a diagram of two electron mirrors of an epitaxial wafer of GaN wafer;
FIG. 4 is a 50 μm-scale view of the sample electron microscope after etching in example 1;
FIG. 5 is a5 μm scale plot of the sample after etching in example 1;
FIG. 6 is a3 μm scale plot of the sample after etching in example 1;
FIG. 7 is a front view of the sample electron microscope after etching in comparative example 1;
FIG. 8 is a side view of the sample electron microscope after etching in comparative example 1.
Detailed Description
The invention discloses a method for repairing lattice defects on the surface of a wafer epitaxial wafer. Those skilled in the art can, with the benefit of this disclosure, suitably modify the process parameters to achieve this. It is expressly noted that all such similar substitutions and modifications will be apparent to those skilled in the art, and are deemed to be included in the present invention. While the methods and applications of this invention have been described in terms of preferred embodiments, it will be apparent to those skilled in the relevant art that the invention can be practiced and practiced with modification and alteration and combination of the methods and applications herein without departing from the spirit and scope of the invention.
The etching processes of the examples and comparative examples of the present application used an inductively coupled plasma etcher (ICP). The sample used was a gallium nitride epitaxial wafer, the size was 2cm×2cm, the morphology was as shown in fig. 2-3, fig. 2 is a diagram of one electron microscope of the gallium nitride wafer epitaxial wafer, and fig. 3 is a diagram of two electron microscopes of the gallium nitride wafer epitaxial wafer.
The invention is further illustrated by the following examples:
Example 1
The sample is transferred into the etcher chamber. Setting process parameters, wherein ICP-Source is 300Source Power,ICP-Bias is 0Bias power, the volume flow of O 2 is 30sccm, the cavity pressure is 3mT, the process cooling water control temperature is 20 ℃, the pressure of cooling gas He on the back of the wafer is 5Torr, and the process time is set to 5min; and (5) starting oxidation treatment on the surface of the gallium nitride epitaxial wafer.
And then introducing BCl 3 with the volume flow of 30sccm, performing removal of the gallium nitride surface oxide layer based on the process parameters of ICP-Source 200Source Power,ICP-Bias 30Bias Power, cavity pressure 3mT, process cooling water control temperature 20 ℃, pressure of wafer back cooling gas He 5Torr, process time 5min and the like.
And finally, etching the gallium nitride surface by adopting mixed gas of chlorine-based gas BCl 3 and fluorine-based gas SF 6 to thoroughly remove the lattice defect layer on the gallium nitride epitaxial surface. The specific implementation process parameters are as follows: the volume flow rate of ICP-Source is 400Source Power,ICP-Bias 180Bias Power,BCl 3, the volume flow rate of SF 6 is 35sccm, the cavity pressure is 3mT, the temperature of process cooling water is 20 ℃, the pressure of cooling gas He on the back of the wafer is 5Torr, and the process time is set to 10min.
Taking out the sample after etching, photographing the etching morphology by using SEM, and the results are shown in figures 4-6, wherein figure 4 is a 50 μm scale map of the sample after etching in example 1, figure 5 is a 5 μm scale map of the sample after etching in example 1, and figure 6 is a 3 μm scale map of the sample after etching in example 1;
Comparative example 1
The sample is transferred into the etcher chamber. Setting proper etching parameters, wherein the ICP-Source is 400Source Power,ICP-Bias is 150Bias Power,BCl 3, the volume flow rate of Cl 2 is 10sccm and 60sccm respectively, the cavity pressure is 6mT, the control temperature of the process cooling water is 20 ℃, the pressure of the cooling gas He on the back of the wafer is 5Torr, and the process time is set to be 60min; and introducing the mixed BCl 3 and Cl 2, and igniting by radio frequency to start etching. Taking out the sample after etching, photographing the etching morphology by using SEM, and obtaining the result shown in figures 7-8, wherein figure 7 is a front view of the sample electron microscope after etching in comparative example 1, and figure 8 is a side view of the sample electron microscope after etching in comparative example 1; as can be seen from fig. 7 to 8, the gallium nitride surface still has a large number of "concave" and "convex" phenomena.
The foregoing is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art, who is within the scope of the present invention, should make equivalent substitutions or modifications according to the technical scheme of the present invention and the inventive concept thereof, and should be covered by the scope of the present invention.
Claims (10)
1. The method for repairing the lattice defects on the surface of the wafer epitaxial wafer is characterized by comprising the following steps of:
S1) carrying out plasma treatment on a wafer epitaxial wafer by adopting oxidizing gas to form an oxide layer on the surface of the wafer epitaxial wafer;
s2) carrying out plasma treatment on the wafer epitaxial wafer subjected to the plasma treatment in the step S1) by adopting chlorine-based gas, so that an oxide layer on the surface of the wafer epitaxial wafer is removed;
And S3) carrying out plasma treatment on the wafer epitaxial wafer subjected to the plasma treatment in the step S2) by adopting mixed gas of chlorine-based gas and fluorine-based gas or chlorine-based gas, so that lattice defects on the surface of the wafer epitaxial wafer are repaired.
2. The method of claim 1, wherein the wafer is selected from at least one of a gallium nitride wafer, a gallium oxide wafer, a gallium arsenide wafer, an aluminum gallium arsenide wafer.
3. The method according to claim 1 or 2, wherein the oxidizing gas in step S1) is selected from at least one of N 2 O or O 2.
4. The method according to claim 1 or 2, wherein in step S2) and step S3), the chlorine-based gas is selected from at least one of Cl 2、BCl3、SiCl4.
5. The method according to claim 1 or 2, wherein the fluorine-based gas in step S3) is selected from at least one of CHF 3、CF4、SF6.
6. The method according to claim 1 or 2, wherein the gas flux of the mixed gas of the chlorine-based gas and the fluorine-based gas or the chlorine-based gas in step S3) is less than 150sccm.
7. The method according to claim 1 or 2, wherein in step S3), the wafer epitaxial wafer after the plasma treatment in step S2) is subjected to the plasma treatment by using a mixed gas of a chlorine-based gas and a fluorine-based gas, and the fluorine-based gas accounts for 10% -30% of the mixed gas in terms of gas flow rate.
8. The method according to claim 1 or 2, wherein the conditions of the plasma treatment in step S1) are:
The pressure is 5 mT-80 mT;
the upper radio frequency Power is 50-500 Source Power;
the lower radio frequency Power is 0Bias Power.
9. The method according to claim 8, wherein the conditions of the plasma treatment in step S2) are:
The pressure is 5 mT-80 mT;
the upper radio frequency Power is 50-500 Source Power;
the lower radio frequency Power is 0Bias Power to 200Bias Power.
10. The method according to claim 9, wherein the conditions of the plasma treatment in step S3) are:
The pressure is 5 mT-80 mT;
the upper radio frequency Power is 50-500 Source Power;
the lower radio frequency Power is 0Bias Power to 200Bias Power.
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