CN118259078B - TaN resistor resistance test circuit, construction method and test method thereof - Google Patents
TaN resistor resistance test circuit, construction method and test method thereof Download PDFInfo
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- CN118259078B CN118259078B CN202410686095.0A CN202410686095A CN118259078B CN 118259078 B CN118259078 B CN 118259078B CN 202410686095 A CN202410686095 A CN 202410686095A CN 118259078 B CN118259078 B CN 118259078B
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- 238000012360 testing method Methods 0.000 title claims abstract description 70
- 238000010276 construction Methods 0.000 title abstract description 5
- 238000010998 test method Methods 0.000 title abstract description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 239
- 239000010931 gold Substances 0.000 claims abstract description 174
- 229910052737 gold Inorganic materials 0.000 claims abstract description 174
- 238000000034 method Methods 0.000 claims description 20
- 238000010304 firing Methods 0.000 claims description 12
- 229910052573 porcelain Inorganic materials 0.000 claims description 10
- 230000001276 controlling effect Effects 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 8
- 238000005259 measurement Methods 0.000 claims description 8
- 230000009471 action Effects 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 6
- 230000001105 regulatory effect Effects 0.000 claims description 6
- 239000000523 sample Substances 0.000 claims description 5
- 239000008188 pellet Substances 0.000 claims description 3
- SWZLHQKRIGCCEU-UHFFFAOYSA-N (1-dodecylpyridin-2-ylidene)methyl-oxoazanium;iodide Chemical compound [I-].CCCCCCCCCCCC[N+]1=CC=CC=C1\C=N\O SWZLHQKRIGCCEU-UHFFFAOYSA-N 0.000 claims 41
- 101150097440 PADI6 gene Proteins 0.000 description 14
- 102100035732 Protein-arginine deiminase type-6 Human genes 0.000 description 14
- 238000003466 welding Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
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Abstract
The invention discloses a resistance test circuit of a TaN resistor, a construction method and a test method thereof, wherein the resistance test circuit comprises a first gold PAD connected with a first end of the TaN resistor on a circuit board, a second gold PAD connected with a second end of the TaN resistor, a third gold PAD and a fourth gold PAD on the circuit board, a first bonding PAD, a second bonding PAD, a third bonding PAD and a fourth bonding PAD, the first bonding PAD is welded above the first gold PAD, the third bonding PAD is welded above the third gold PAD, the third bonding PAD is connected with the first bonding PAD through a gold wire, the second bonding PAD is welded above the second gold PAD, the fourth bonding PAD is welded above the fourth gold PAD, the fourth bonding PAD is connected with the second bonding PAD through a gold wire, and a universal meter test pen is respectively connected with the third bonding PAD and the fourth bonding PAD. And guiding the gold PADs connected with the two ends of the TaN resistor to adjacent large-size gold PADs for electric shock, connecting the large-size gold PADs with a universal meter to form a loop, and measuring the resistance of the TaN resistor.
Description
Technical Field
The invention relates to the technical field of resistance measurement, in particular to a resistance test circuit of a TaN resistor, a construction method and a test method thereof.
Background
The TaN resistor has the advantages of low resistance temperature coefficient, high mechanical strength, high temperature resistance, good chemical stability, insolubility in hydrochloric acid, nitric acid and hydrofluoric acid, and the like, has a large adjustable range of resistance values (from a conductor to an insulator), and is widely used in a microwave integrated circuit, and the composition of the TaN resistor is formed by sequentially connecting a substrate, a resistor film, a transition metal layer and a conductive gold layer electrode from bottom to top; the two transition metal layers and the two conductive gold layer electrodes are respectively arranged on two sides of the resistor film; the two conductive gold layer electrodes are respectively attached to the upper surfaces of the two transition metal layers; the resistive film is attached to the upper surface of the substrate. When TaN is welded on a circuit board, gold PAD is formed, but the size of the gold PAD is smaller, generally smaller than 0.2mm by 0.2mm, and the size of the TaN resistor is only 50-100 mu m because of the smaller size of the TaN resistor.
In the prior art, a universal meter resistance detection method is generally adopted for resistance measurement of the resistor, however, the resistance measurement is limited by the size of the nib of a universal meter test meter pen, because the bonding pads at two ends of the TaN resistor are smaller, and the distance between the two bonding pads is smaller, when the bonding pads at two ends of the resistor to be tested are smaller than 0.2mm by 0.2mm, when the universal meter is used for testing, the nib of the two test meter pens can be contacted with each other to form a loop, so that the resistance of the TaN resistor cannot be detected by using the universal test meter pen.
Disclosure of Invention
The invention aims to provide a resistance test circuit of a TaN resistor, a construction method and a test method thereof, wherein a gold wire bonding method is adopted to lead out two ends of the TaN resistor to adjacent large-size gold PADs for electric shock, and a universal meter is contacted with the adjacent gold PADs for electric shock to form loop measurement, so that the problem that the conventional universal meter cannot measure the resistance of the TaN resistor with the size of the extremely small gold PADs is solved.
In order to achieve the above purpose, the present application adopts the following technical scheme:
In a first aspect, the application provides a resistance test circuit of a TaN resistor, which comprises a first gold PAD connected with a first end of the TaN resistor on a circuit board, a second gold PAD connected with a second end of the TaN resistor, and a third gold PAD and a fourth gold PAD on the circuit board, wherein the first gold PAD and the second gold PAD have the same structure size, the inscribed circle diameters of the third gold PAD and the fourth gold PAD are both larger than the inscribed circle diameter of the first gold PAD, the resistance test circuit also comprises a first PAD, a second PAD, a third PAD and a fourth PAD, the first PAD is welded above the first gold PAD through a gold wire bonding machine, the third PAD is welded above the third gold PAD through a gold wire bonding machine, the third PAD is connected with the first PAD through a gold wire, the second PAD is welded above the second gold PAD through a gold wire bonding machine, the fourth PAD is welded above the fourth gold PAD through a gold wire bonding machine, and the fourth PAD is connected with a fourth multimeter through a gold wire bonding machine.
In some preferred embodiments, the maximum length of each of the first PAD and the second PAD is less than the inscribed circle diameter of the first gold PAD.
In some preferred embodiments, the maximum length of each of the first PAD and the second PAD is equal to or greater than the maximum length of the minimum PAD, and the maximum length of the minimum PAD is the size of the minimum PAD among PADs that can be bonded with the first gold PAD and the second gold PAD when gold wire bonding.
In some preferred embodiments, the first gold PAD and the second gold PAD are each less than 0.2mm in maximum length, and the gold wire has a maximum length of 40±5 μm.
In some preferred embodiments, the maximum length of each of the third and fourth pads is greater than the tip diameter of the test stylus of the multimeter.
In a second aspect, the present application provides a method for constructing a resistance test circuit of a TaN resistor, specifically comprising the following steps:
S1, placing a circuit board containing a to-be-detected TaN resistor on a base of a gold wire bonding machine, and setting first bonding power of the gold wire bonding machine;
s2, controlling the point discharge of a firing rod of the gold wire bonding machine, fusing gold wires into pellets, and forming a first bonding PAD above a first gold PAD of the to-be-tested TaN resistor in the process of pressing down a porcelain nozzle of the gold wire bonding machine;
S3, moving the base, stretching the gold wire to be above a third gold PAD on the circuit board, wherein the maximum length of the third gold PAD is larger than that of the first gold PAD, adjusting the bonding power of the gold wire bonding machine to be the third bonding power, controlling the point discharge of a firing rod of the gold wire bonding machine, fusing the gold wire into a ball, and forming the third bonding PAD under the action of the pressing of a porcelain nozzle of the gold wire bonding machine;
s4, moving a second gold PAD of the to-be-tested TaN resistor to the lower part of the porcelain nozzle, adjusting the bonding power of the gold wire bonding machine to be the second bonding power, and forming a second bonding PAD above the second gold PAD of the to-be-tested TaN resistor;
S5, moving the base, stretching the gold wire to be above a fourth gold PAD on the circuit board, wherein the maximum length of the fourth gold PAD is larger than that of the first gold PAD, adjusting the bonding power of the gold wire bonding machine to be fourth bonding power, controlling the point discharge of a firing rod of the gold wire bonding machine, fusing the gold wire into a ball, and forming the fourth bonding PAD under the action of the pressing of a ceramic nozzle of the gold wire bonding machine;
and S6, respectively connecting test probes of the universal meter with the third bonding pad and the fourth bonding pad.
In some preferred embodiments, the first bonding power is a power level corresponding to a case where the maximum length of the first PAD is smaller than the maximum length of the first gold PAD, and the second bonding power is a power level corresponding to a case where the maximum length of the second PAD is smaller than the maximum length of the second gold PAD.
In some preferred embodiments, the first bonding power and the second bonding power are equal, and are both minimum bonding powers, and the minimum bonding power is a power level corresponding to a minimum PAD of PADs to which the first gold PAD and the second gold PAD can be bonded; the method for determining the minimum bonding power comprises the following steps:
s11, setting bonding power of a gold wire bonding machine, starting from bonding power corresponding to the maximum bonding power, forming a bonding PAD on the surface of the experimental TaN resistor by using the gold wire bonding machine, and observing whether the gold wire can be combined with the gold PAD of the experimental TaN resistor;
s12, if the bonding power can be adjusted, the bonding power is reduced by one minimum adjusting unit in sequence; the minimum adjusting unit is the minimum power which can be adjusted by the gold wire bonding machine once;
S13, after bonding power is regulated each time, forming a bonding PAD on the surface of the experimental TaN resistor by using a gold wire bonding machine according to the regulated bonding power, and observing whether the gold wire can be combined with the gold PAD of the experimental TaN resistor; when it is observed that the gold wire cannot be bonded to the gold PAD of the experimental TaN resistor, the bonding power at that time is recorded, and the minimum bonding power is obtained.
In some preferred embodiments, the third bonding power is a power level corresponding to a maximum length of the third bonding pad being greater than a tip diameter of a test stylus of the multimeter, and the fourth bonding power is a power level corresponding to a maximum length of the fourth bonding pad being greater than a tip diameter of the test stylus of the multimeter.
In a third aspect, the present application provides a resistance testing method of a TaN resistor, which is applied to a resistance testing circuit of a TaN resistor in the first aspect, and the specific process includes:
step 1, placing a selection switch of a universal meter in an ohmic gear, and selecting a testing range of the universal meter according to the calibration size of a to-be-tested TaN resistor;
step 2, shorting two test meter pens of the universal meter, and adjusting an ohm zero adjustment knob to enable a pointer or a display to point to a zero position;
step 3, respectively contacting two test probes of the universal meter with a third bonding PAD and a fourth bonding PAD which are connected with gold PADs at two ends of the TaN resistor to be tested to form a measurement loop;
And 4, reading a display of the universal meter to obtain the resistance of the TaN resistor to be measured.
The invention has the beneficial effects that:
According to the resistance test circuit of the TaN resistor, gold PADs connected with two ends of the TaN resistor are led to adjacent gold PADs with large sizes to be subjected to electric shock, then a universal meter is used for being connected with the gold PADs with large sizes to form a loop, the resistance of the TaN resistor is measured, because the pen point of a test meter pen of the universal meter is large, the size of the gold PADs at two ends of the TaN resistor is small, and the size of the TaN resistor is small, if the test meter pen is adopted to directly contact with the gold PADs at two ends of the TaN resistor, the pen points of the two test meter pens are contacted to form the loop, and therefore the resistance of the TaN resistor cannot be accurately measured.
In order to bond gold PADs of different sizes of TaN resistors, and during bonding, the inscribed circle diameter of the gold PAD must be larger than the maximum length of the PAD, therefore, a minimum PAD size can be found, welding electric shock can be realized for gold PADs of various sizes, and in order to enable a multimeter pen to accurately measure, the maximum length of an adjacent large-size gold PAD needs to be larger than the pen point diameter of the multimeter pen.
The test circuit constructed by the application can measure the resistance value of the TaN resistor with the minimum gold PAD size by adopting the universal meter, is suitable for measuring the TaN resistors with different sizes, and effectively solves the problems that the resistor is small and cannot be measured by adopting the universal meter.
Drawings
FIG. 1 is a schematic diagram of a connection of a resistance test circuit according to an embodiment of the present invention;
FIG. 2 is an enlarged schematic diagram of a first bonding pad welded on TaN resistor according to an embodiment of the present invention;
fig. 3 is a schematic connection diagram of a first bonding pad and a third bonding pad according to an embodiment of the present invention.
Reference numerals
1-First bonding PAD, 2-second bonding PAD, 3-third bonding PAD, 4-fourth bonding PAD, 5-TaN resistor, 6-first gold PAD, 7-second gold PAD, 8-third gold PAD, 9-fourth gold PAD, 10-multimeter and 11-gold wire.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. The following description of at least one exemplary embodiment is merely exemplary in nature and is in no way intended to limit the invention, its application, or uses. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The relative arrangement of the components and steps, numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless it is specifically stated otherwise.
Meanwhile, it should be understood that the sizes of the respective parts shown in the drawings are not drawn in actual scale for convenience of description.
In addition, descriptions of well-known structures, functions and configurations may be omitted for clarity and conciseness. Those of ordinary skill in the art will recognize that various changes and modifications of the examples described herein can be made without departing from the spirit and scope of the present disclosure.
Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail, but should be considered part of the specification where appropriate.
In all examples shown and discussed herein, any specific values should be construed as merely illustrative, and not a limitation. Thus, other examples of the exemplary embodiments may have different values.
Example 1
As shown in fig. 1-2, the application provides a resistance test circuit of a TaN resistor, which comprises a first gold PAD6 connected with a first end of the TaN resistor 5 on a circuit board, a second gold PAD7 connected with a second end of the TaN resistor 5, and a third gold PAD8 and a fourth gold PAD9 on the circuit board, wherein the structures of the first gold PAD6 and the second gold PAD7 are the same in size, the inscribed circle diameters of the third gold PAD8 and the fourth gold PAD9 are larger than the inscribed circle diameter of the first gold PAD6, the resistance test circuit further comprises a first bonding PAD 1, a second bonding PAD 2, a third bonding PAD 3 and a fourth bonding PAD 4, the first bonding PAD 1 is welded above the first gold PAD6 through a gold 11 bonding machine, the third bonding PAD 3 is connected with the first bonding PAD9 through a gold 11 bonding machine, the second bonding PAD 2 is connected with the second bonding PAD7 through a gold 11 bonding machine, and the fourth bonding PAD 4 is connected with the fourth bonding PAD 4 through a gold 11 bonding machine and the fourth bonding PAD 4 through a universal meter, and the test circuit board is connected with the fourth bonding PAD 4 through a gold 11 bonding machine. When the positions of the second and fourth PADs 4 are selected, the other gold PAD on the circuit board is selected, and the diameter of the fourth PAD 4 is larger than the maximum length of the second PAD 2, and the diameter of the third PAD 3 is larger than the maximum length of the first PAD 1. In the following examples, the bonding PADs soldered by the gold wire bonder are generally circular, and thus the following maximum length can be understood as the diameter of the bonding PAD, and the inscribed circle diameter can be considered as the maximum width of the PAD.
It can be understood that the third gold PAD and the fourth gold PAD consider selecting other large PADs on the circuit board, for example, the chip pins have a larger general PAD structure, and the adjacent chip pins PAD can be selected as the third gold PAD and the fourth gold PAD, so as to play a role of leading out bridging, and the operation of other devices of the circuit board is not affected.
Specifically, in order to make the bonding PAD position soldered on the gold PAD of the resistor not affect other components on the circuit board, the maximum length of the first bonding PAD 1 is smaller than the inscribed circle diameter (width in the figure) of the first gold PAD6, and the maximum length of the second bonding PAD 2 is smaller than the inscribed circle diameter of the second gold PAD 7. And in order to meet the measurement of the TaN resistor 5 with a lower size, the size of the minimum bonding PAD is determined, the maximum lengths of the first bonding PAD 1 and the second bonding PAD 2 are all required to be greater than or equal to the maximum length of the minimum bonding PAD, and the maximum length of the minimum bonding PAD is the size of the minimum bonding PAD in bonding PADs capable of being bonded with the first gold PAD6 and the second gold PAD7 when the gold wire 11 is bonded, and preferably, the maximum length of the minimum bonding PAD is 100 mu m.
As shown in FIG. 3, the TaN resistor 5 is generally small in size, and the gold PAD of the TaN resistor 5 is smaller than 0.2mm, as shown in FIG. 110.21 μm, when the test meter 10 is directly used for testing a circuit board, two pen points of the test meter pen are easy to contact, so that the resistance of the TaN resistor 5 cannot be measured by the universal meter 10. Therefore, the application finds a gold PAD which is larger than the inscribed circle diameter of the PAD of the TaN resistor 5 and larger than the meter pen diameter of the universal meter 10 on the circuit board, forms a first bonding PAD 1 on the first gold PAD6 of the resistor through a gold wire 11 bonding machine to form a third bonding PAD 3 on the large PAD, takes the third bonding PAD 3 as an intermediate bonding PAD, and converts the resistance measured by the universal meter 10 through the first gold PAD6 and the second gold PAD7 into the resistance measured by the third bonding PAD 3 and the fourth bonding PAD 4. In order to ensure that other devices are not affected during soldering, the maximum length of the first bonding PAD 1 needs to be smaller than the inscribed circle diameter of the first gold PAD6, and in order to obtain a minimum bonding PAD adapting to multiple PAD sizes, therefore, the application provides that the maximum length of the minimum bonding PAD is 100 μm, and is the minimum soldering size when the gold wire 11 can be combined with the gold PAD. And the maximum length of the third PAD is required to be larger than the diameter of the test meter pen, and the PADs smaller than 0.2mm for the universal meter cannot be contacted, so that the maximum lengths of the third PAD and the fourth PAD are larger than 0.2mm, and the widths of the third gold PAD and the fourth gold PAD are larger than those of the third PAD and the fourth PAD.
Specifically, in order to fully utilize the existing resources, the gold PADs at both ends of the TaN resistor 5 are led to other large-sized PADs adjacent to the TaN resistor 5, and the bonding positions of the gold wires 11 of the third PAD 3 and the fourth PAD 4 are above other gold PADs adjacent to the first gold PAD6 and the third gold PAD8, respectively, on the circuit board. And the maximum length of the third PAD 3 and the fourth PAD 4 must be larger than the nib diameter of the test meter pen of the multimeter 10 and the third PAD 3 is smaller than the third gold PAD8, and the maximum length of the fourth PAD 4 is smaller than the inscribed circle diameter of the fourth gold PAD 9.
According to the test circuit, the test flow is as follows:
Step 1, placing a selection switch of the universal meter 10 in an ohmic gear, and selecting a testing range of the universal meter 10 according to the calibration size of the to-be-tested TaN resistor 5;
Step 2, shorting two test meter pens of the universal meter 10, and adjusting an ohm zero adjustment knob to enable a pointer or a display to point to a zero position;
Step 3, respectively contacting two test probes of the universal meter 10 with a third bonding PAD 3 and a fourth bonding PAD 4 which are connected with gold PADs at two ends of the TaN resistor 5 to be tested to form a measurement loop;
And 4, reading a display of the universal meter 10 to obtain the resistance value of the TaN resistor 5 to be measured.
Example 2
In order to obtain the first pad 1, the second pad 2, the third pad 3 and the fourth pad 4 of the resistance test circuit, the present embodiment proposes a method for bonding a gold wire 11 to form the pads, and the bonding of the gold wire 11 in this embodiment uses a WT-0 ultrasonic gold wire 11 bonding machine as an example, where the WT-0 ultrasonic gold wire 11 bonding machine includes a wire feeding system, a microscope system, a firing assembly, a fixture assembly, a control panel, a base and an operating lever, the firing assembly includes a firing rod and a ceramic nozzle, and the ceramic nozzle is disposed above the base. In use, the high precision microscope system detects and locates the gold PAD position of the TaN resistor 5 on the circuit board. Once positioned accurately, the TaN resistor 5 is secured to the base, and the wire 11 is then automatically removed from the coil of wire in the wire feed system and drawn to the appropriate length by the tension control system. Then, the gold wire is fed into the ceramic tip to be ready for the next bonding operation. The tip of the porcelain nozzle extends out of the gold wire 11, and in the pressing process of the porcelain nozzle, the tip of the striking rod discharges, the extending gold wire 11 is instantly fused into a small ball, and the small ball is welded on the gold PAD under the action of pressure. The TaN resistor 5 is observed from a microscope to find the position of another bonding pad, the bonding pad is aligned with the porcelain nozzle, the operation is repeated to form a second bonding pad 2, the bonding pads are connected by a gold wire 11, and the formed effect is shown in figure 2.
Specifically, the equipment parameters to be set when the WT-0 ultrasonic gold wire 11 bonding machine is used include welding time, welding power and the like, wherein the welding time only affects the welding firmness, and the variable of the welding point diameter (maximum length) of the welding point is only related to the welding power. The power regulation of the WT-0 ultrasonic gold wire 11 bonding machine takes 0.5W as the minimum regulation unit, the power range is 0-10W, and the diameter of the adopted gold wire 11 is 40+/-5 mu m. Specifically, the process of constructing the test circuit by using the WT-0 ultrasonic gold wire 11 bonding mechanism specifically comprises the following steps:
S1, placing a circuit board containing a to-be-tested TaN resistor 5 on a base of a gold wire 11 bonding machine, and setting first bonding power of the gold wire 11 bonding machine; preferably, the first bonding power is 5.5W,
Through experimental tests, the larger the power of the wire 11 bonding machine is, the larger the diameter of the bonding pad is, the maximum length of the bonding pad can be controlled by adjusting the power, and the corresponding relation between the welding power and the maximum length of the bonding pad obtained in the embodiment is shown in table 1:
TABLE 1
| Welding power/W | 7 | 6.5 | 6 | 5.5 | ＜5.5 |
| Maximum length of bonding pad/μm | 155 | 133 | 124 | 100 | Cannot be combined with the gold layer |
Therefore, as long as the width of the gold PAD at both ends of the TaN resistor 5 is known, the minimum PAD size can be directly adopted to adapt to all PAD sizes as long as the width of the gold PAD is larger than the maximum length of the first PAD, in this embodiment, when the minimum diameter measured at 5.5W is about 100 μm and smaller than 5.5W, the electric shock cannot be welded, the minimum PAD diameter is 100 μm, and the optimal welding power at this time is 5.5W.
Therefore, the first bonding power is the power corresponding to the maximum length of the first PAD 1 being smaller than the maximum length of the first gold PAD6, and the second bonding power is the power corresponding to the maximum length of the second PAD 2 being smaller than the maximum length of the second gold PAD7, and preferably, the first bonding power and the second bonding power are equal, and are both set to be the minimum bonding power, i.e., 5.5W.
The method for determining the minimum bonding power comprises the following steps:
S11, setting bonding power of a gold wire 11 bonding machine, starting from power corresponding to a maximum bonding PAD (7W in the embodiment), forming a bonding PAD on the surface of the experimental TaN resistor 5 by using the gold wire 11 bonding machine, and observing whether the gold wire 11 can be combined with gold PAD of the experimental TaN resistor 5;
s12, if the bonding power can be adjusted, the bonding power is reduced by one minimum adjusting unit in sequence; the minimum adjusting unit is the minimum power (0.5W in the embodiment) which can be adjusted by the gold wire 11 bonding machine once;
S13, after bonding power is regulated each time, forming a bonding PAD on the surface of the experimental TaN resistor 5 by using a gold wire 11 bonding machine according to the regulated bonding power, and observing whether the gold wire 11 can be combined with the gold PAD of the experimental TaN resistor 5; when it was observed that the gold wire 11 could not be bonded to the gold PAD of the experimental TaN resistor 5, the bonding power at that time was recorded, and the minimum bonding power was obtained. It should be noted that, the determination of the minimum bonding power is to find a gold PAD with the smallest size that can be bonded by using the device, and the method of the present invention can be used when the diameter of the inscribed circle of the gold PAD is larger than the diameter of the smallest bonding PAD.
S2, controlling the point discharge of a firing rod of the gold wire 11 bonding machine, fusing gold wires 11 into pellets, and forming a first bonding PAD 1 above a first gold PAD6 of the to-be-tested TaN resistor 5 in the process of pressing down a porcelain nozzle of the gold wire 11 bonding machine;
S3, moving a base, stretching the gold wire 11 to the position above a third gold PAD8 on the circuit board, wherein the diameter of an inscribed circle of the third gold PAD8 is larger than that of the first gold PAD6, adjusting the bonding power of a gold wire 11 bonding machine to be third bonding power, controlling the point discharge of a firing rod of the gold wire 11 bonding machine, fusing the gold wire 11 into a small ball, and forming a third bonding PAD 3 under the action of pressing down a ceramic nozzle of the gold wire 11 bonding machine; preferably, the third bonding power is 5.5W.
S4, moving a second gold PAD7 of the to-be-tested TaN resistor 5 to the lower part of the porcelain nozzle, adjusting the bonding power of the gold wire 11 bonding machine to be the second bonding power, and forming a second bonding PAD 2 above the second gold PAD7 of the to-be-tested TaN resistor 5;
s5, moving a base, stretching the gold wire 11 above a fourth gold PAD9 on the circuit board, wherein the diameter of an inscribed circle of the fourth gold PAD9 is larger than that of the inscribed circle of the first gold PAD6, adjusting the bonding power of a gold wire 11 bonding machine to be fourth bonding power, controlling the point discharge of a firing rod of the gold wire 11 bonding machine, fusing the gold wire 11 into a small ball, and forming a fourth bonding PAD 4 under the action of the pressing down of a ceramic nozzle of the gold wire 11 bonding machine;
and S6, respectively connecting test pens of the universal meter 10 with the third bonding pad 3 and the fourth bonding pad 4.
Specifically, the third bonding power is the power corresponding to the maximum length of the third bonding pad 3 being greater than the diameter of the nib of the test meter pen of the multimeter 10, and the fourth bonding power is the power corresponding to the maximum length of the fourth bonding pad 4 being greater than the diameter of the nib of the test meter pen of the multimeter 10. It should be noted that, since the maximum length of the third PAD 3 and the fourth PAD 4 needs to be larger than the diameter of the sharpened tip of the multimeter 10, if the size of the PAD produced by the gold wire 11 bonding machine is too small, other welding methods may be used for repair welding, so that the maximum length of the third PAD 3 and the fourth PAD 4 needs to be larger than the diameter of the sharpened tip of the multimeter 10, and finally the third PAD 3 and the fourth PAD 4 are formed on other gold PADs on the circuit board.
The foregoing description of the preferred embodiment of the invention is not intended to limit the invention in any way, but rather to cover all modifications, equivalents, improvements and alternatives falling within the spirit and principles of the invention.
Claims (10)
1. A resistance test circuit of a TAN resistor comprises a first gold PAD (6) connected with a first end of a TaN resistor (5) on a circuit board, a second gold PAD (7) connected with a second end of the TaN resistor (5) and a third gold PAD (8) and a fourth gold PAD (9) on the circuit board, wherein the structures of the first gold PAD (6) and the second gold PAD (7) are the same, the resistance test circuit is characterized in that other chip pins PAD on the circuit board are used as the third gold PAD and the fourth gold PAD, the inscribed circle diameters of the third gold PAD (8) and the fourth gold PAD (9) are larger than the inscribed circle diameter of the first gold PAD (6), the resistance test circuit also comprises a first bonding PAD (1), a second bonding PAD (2), a third bonding PAD (3) and a fourth bonding PAD (4), the first bonding PAD (1) is connected with the first gold PAD (6) through a gold bonding machine at a first bonding power, the second bonding PAD (3) is connected with the fourth bonding PAD (11) through the gold PAD (3) through the gold bonding machine at a second bonding PAD (3) and the fourth bonding PAD (4) through the gold bonding machine at a fourth bonding PAD (3) at a fourth bonding power, the two test probes of the universal meter (10) are respectively connected with the third bonding PAD (3) and the fourth bonding PAD (4), the first bonding power and the second bonding power are equal and are minimum bonding power, and the minimum bonding power is the power corresponding to the minimum bonding PAD in the bonding PADs combined by the first gold PAD (6) and the second gold PAD (7).
2. A TAN resistor resistance test circuit according to claim 1, characterized in that the maximum lengths of the first PAD (1) and the second PAD (2) are each smaller than the inscribed circle diameter of the first gold PAD (6).
3. The resistance test circuit of a TAN resistor according to claim 2, wherein the maximum lengths of the first PAD (1) and the second PAD (2) are equal to or greater than the maximum length of the minimum PAD, and the maximum length of the minimum PAD is the size of the minimum PAD among PADs capable of being bonded with the first gold PAD (6) when the gold wire (11) is bonded.
4. The resistance test circuit of the TAN resistor according to claim 1, wherein the inscribed circle diameters of the first gold PAD (6) and the second gold PAD (7) are smaller than 0.2mm, and the diameter of the gold wire (11) is 40±5 μm.
5. The resistance test circuit of the TAN resistor according to claim 1, wherein the maximum length of the third bonding pad (3) and the fourth bonding pad (4) is larger than the nib diameter of the test stylus of the multimeter (10).
6. A method for constructing a resistance test circuit of a TAN resistor is characterized in that, the resistance test circuit using the TAN resistor of claim 1, specifically comprising the steps of:
s1, placing a circuit board containing a to-be-detected TaN resistor (5) on a base of a gold wire bonding machine, and setting first bonding power of the gold wire bonding machine;
S2, controlling the point discharge of a firing rod of a gold wire bonding machine, fusing gold wires (11) into pellets, and forming a first bonding PAD (1) above a first gold PAD (6) of a to-be-tested TaN resistor (5) in the process of pressing down a porcelain nozzle of the gold wire bonding machine;
S3, moving a base, stretching the gold wire (11) above a third gold PAD (8) on the circuit board, wherein the maximum length of the third gold PAD (8) is larger than that of the first gold PAD (6), adjusting the bonding power of a gold wire bonding machine to be third bonding power, controlling the point discharge of a firing rod of the gold wire bonding machine, fusing the gold wire (11) into a small ball, and forming a third bonding PAD (3) under the action of pressing down a ceramic nozzle of the gold wire bonding machine;
S4, moving a second gold PAD (7) of the to-be-detected TaN resistor (5) to the lower part of the porcelain nozzle, adjusting the bonding power of the gold wire bonding machine to be the second bonding power, and forming a second bonding PAD (2) above the second gold PAD (7) of the to-be-detected TaN resistor (5);
S5, moving a base, stretching the gold wire (11) above a fourth gold PAD (9) on the circuit board, wherein the maximum length of the fourth gold PAD (9) is larger than that of the first gold PAD (6), adjusting the bonding power of a gold wire bonding machine to be fourth bonding power, controlling the point discharge of a firing rod of the gold wire bonding machine, fusing the gold wire (11) into a small ball, and forming a fourth bonding PAD (4) under the action of pressing down a ceramic nozzle of the gold wire bonding machine;
s6, connecting test pens of the universal meter (10) with the third bonding pad (3) and the fourth bonding pad (4) respectively.
7. The method for constructing a resistance test circuit of a TAN resistor according to claim 6, wherein the first bonding power is a power level corresponding to a case where a maximum length of the first bonding PAD (1) is smaller than a maximum length of the first gold PAD (6), and the second bonding power is a power level corresponding to a case where a maximum length of the second bonding PAD (2) is smaller than a maximum length of the second gold PAD (7).
8. The method for constructing a resistance test circuit of a TAN resistor according to claim 7, wherein the first bonding power and the second bonding power are equal and are both minimum bonding powers, and the minimum bonding power is a power level corresponding to a minimum PAD of PADs to which the first gold PAD (6) and the second gold PAD (7) can be bonded; the method for determining the minimum bonding power comprises the following steps:
S11, setting bonding power of a gold wire bonding machine, forming a bonding PAD on the surface of the experimental TaN resistor (5) by using the gold wire bonding machine from the bonding power corresponding to the maximum bonding PAD, and observing whether the gold wire (11) can be combined with gold PAD of the experimental TaN resistor (5);
s12, if the bonding power can be adjusted, the bonding power is reduced by one minimum adjusting unit in sequence; the minimum adjusting unit is the minimum power which can be adjusted by the gold wire bonding machine once;
S13, after bonding power is regulated each time, forming a bonding PAD on the surface of the experimental TaN resistor (5) by using a gold wire bonding machine according to the regulated bonding power, and observing whether the gold wire (11) can be combined with the gold PAD of the experimental TaN resistor (5); when it was observed that gold wire (11) could not be bonded to gold PAD of experimental TaN resistor (5), the bonding power at this time was recorded, yielding the minimum bonding power.
9. The method for constructing a resistance test circuit of a TAN resistor according to claim 6, wherein the third bonding power is a power corresponding to a maximum length of the third bonding pad (3) larger than a tip diameter of a test pen of the multimeter (10), and the fourth bonding power is a power corresponding to a maximum length of the fourth bonding pad (4) larger than a tip diameter of a test pen of the multimeter (10).
10. The resistance testing method of the TAN resistor is characterized by being applied to the resistance testing circuit of the TAN resistor as claimed in claim 1, and specifically comprises the following steps:
Step 1, placing a selection switch of a universal meter (10) in an ohmic gear, and selecting a testing range of the universal meter (10) according to the calibration size of a to-be-tested TaN resistor (5);
Step 2, shorting two test meter pens of the universal meter (10), adjusting an ohm zero adjustment knob to enable a pointer or a display to point to a zero position;
Step 3, respectively contacting two test probes of a universal meter (10) with a third bonding PAD (3) and a fourth bonding PAD (4) which are connected with gold PADs at two ends of a to-be-tested TaN resistor (5) to form a measurement loop;
And 4, reading a display of the universal meter (10) to obtain the resistance value of the TaN resistor (5) to be measured.
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