CN118197929A - Substrate bonding system and substrate bonding method - Google Patents

Substrate bonding system and substrate bonding method Download PDF

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Publication number
CN118197929A
CN118197929A CN202311275447.5A CN202311275447A CN118197929A CN 118197929 A CN118197929 A CN 118197929A CN 202311275447 A CN202311275447 A CN 202311275447A CN 118197929 A CN118197929 A CN 118197929A
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China
Prior art keywords
substrate
pressure
bonding
space
plasma
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CN202311275447.5A
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Chinese (zh)
Inventor
李济熙
金是勋
金经晩
洪荣杓
郑然赫
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Semes Co Ltd
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Semes Co Ltd
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Abstract

Disclosed is a technique for controlling the clamping and unclamping processes of a substrate and for effectively performing substrate bonding by a dehydration reaction while sufficiently maintaining hydrophilization of the substrate surface when performing a plasma process for hydrophilizing the substrate surface. The substrate bonding system comprises a substrate processing device, a substrate supporting unit and a plasma generating unit, wherein the substrate processing device comprises a main processing device and a pressure regulating unit, the main processing device hydrophilizes the surface of a substrate through a plasma process, the main processing device comprises a process chamber, the substrate supporting unit and the plasma generating unit, the substrate supporting unit is configured in a plasma processing space and is provided with a separation space between an upper surface and the lower surface of the substrate, and the plasma generating unit induces the plasma pressure regulating unit in the plasma processing space to regulate pressure between the plasma processing space and the separation space; and a substrate bonding device for bonding substrates having hydrophilized surfaces by dehydration reaction.

Description

Substrate bonding system and substrate bonding method
Technical Field
The present invention relates to a substrate bonding system and a substrate bonding method, and more particularly, to a substrate bonding method that can efficiently perform substrate bonding through a dehydration reaction in a state where hydrophilization of a substrate surface is sufficiently maintained by removing a clamping and unclamping process of a substrate when performing a plasma process for hydrophilizing the substrate surface.
Background
For high density integration of semiconductor elements, three-dimensional stacking technology is being applied. Compared with the two-dimensional integration technology, the three-dimensional stacking technology can improve the performance of the chip by greatly improving the integration level of a unit area or shortening the length of wiring. Meanwhile, the novel characteristics can be exerted by the combination of the prior elements.
Three-dimensional stacking techniques are generally C2C (Chip to Chip), C2W (Chip to Wafer), W2W (Wafer to Wafer).
The W2W stacking is a manner of manufacturing chips through a dicing (Dicing) process after stacking the wafers. As the number of bonding processes is significantly reduced compared to the C2C mode or the C2W mode, there is an advantage in that mass production is facilitated.
Conventionally, a three-dimensional stacked semiconductor is manufactured by using a C2C stacking method in a semiconductor manufacturing process due to various technical limitations, etc., but in view of mass productivity and speed, there is a trend to use a W2W stacking method.
In particular, the W2W stacking approach may be more efficient to choose when improving the performance of a chip according to a three-dimensional stack than considering only improving the performance by a simple stack of memory semiconductors or the like.
As an example, bonding between substrates may be performed by hydrophilizing the substrate surfaces by plasma treatment and bonding between substrates by dehydration reaction. The hybrid bonding method has an advantage in that covalent bonds between interfaces are induced by increasing the surface energy of the bonding surface, so that bonding between substrates can be performed even with a very small force.
Hybrid bonding mode after hydrophilizing the substrate surface by plasma treatment, substrate bonding by dehydration reaction can be stably formed only if the bonding process between substrates is performed for a certain period of time.
However, since a time is required for the process of clamping and unclamping the substrate, a certain portion of the hydroxyl groups (-OH) on the surface of the hydrophilized substrate may disappear, and thus there is a problem in that a dehydration reaction between substrates can not be sufficiently obtained to be stably bonded.
Further, although the entire surface bonding between the substrates is possible only with the substrates held in a flat and spread state, there is a problem that a portion where the bonding between the substrates cannot be properly formed when the substrates are distorted.
Disclosure of Invention
The present invention has been made to solve the problems of the prior art as described above, and provides a scheme in which a bonding process between substrates is performed in a short time after hydrophilization of a substrate surface by plasma treatment, so that substrate bonding can be stably performed through a sufficient dehydration reaction.
In particular, the problem is solved that a certain portion of hydroxyl groups (-OH) on the surface of the hydrophilized substrate may disappear due to the time required for the process of clamping and unclamping the substrate, whereby a dehydration reaction between the stably bonded substrates cannot be sufficiently obtained.
Further, the problem is that the entire surface bonding between the substrates is only possible while the substrates are kept flat and unfolded, but when the substrates are distorted, there is a problem that a portion where the bonding between the substrates cannot be properly formed occurs.
The objects of the present invention are not limited to the foregoing description, and other objects and advantages of the present invention not mentioned will be understood from the following description.
An embodiment of the substrate bonding system according to the present invention may include: a substrate processing apparatus including a main processing apparatus hydrophilizing a substrate surface by a plasma process, and including a process chamber providing a plasma processing space, a substrate supporting unit disposed in the plasma processing space and housing a substrate, and provided with a partition space between an upper surface and a lower surface of the substrate, and a pressure regulating unit inducing plasma in the plasma processing space, the pressure regulating unit regulating pressure between the plasma processing space and the partition space; and a substrate bonding device for bonding substrates having hydrophilized surfaces by dehydration reaction.
Here, the substrate supporting unit may place the supporting substrate without inducing an electrostatic force and without an adsorption force.
As an example, the pressure adjusting means may include: a first pressure regulating line connected to the process chamber to provide a vacuum pressure of the plasma processing space; a second pressure adjusting line connected to the substrate supporting unit to provide a vacuum pressure of the partitioned space; a vacuum pump that supplies vacuum pressure to the first pressure adjustment line and the second pressure adjustment line; a first pressure regulating valve disposed on the first pressure regulating line and regulating a vacuum pressure formed by the first pressure regulating line; and a second pressure regulating valve disposed on the second pressure regulating line to regulate a vacuum pressure formed by the second pressure regulating line, the main processing apparatus further including: and a control means for controlling opening and closing of the first pressure regulating valve and the second pressure regulating valve to form the same pressure between the plasma processing space and the partitioned space.
Further, the substrate processing apparatus may further include: a transition device disposed at a front end of the main processing device, and including: a transition chamber that maintains a process environment of the main processing device; and a substrate transfer robot disposed in the transition chamber and transferring a substrate to the main processing apparatus; and a door member selectively opening and closing between the main processing device and the transition chamber.
Preferably, the pressure adjusting unit may adjust the pressure between the inner space of the transition device and the plasma processing space of the main processing device.
As an example, the pressure adjusting means may include: a first pressure regulating line connected to a process chamber of the main processing apparatus to provide a vacuum pressure of the plasma processing space; a third pressure regulating line connected to the transition chamber to provide a vacuum pressure of the inner space; a vacuum pump that supplies vacuum pressure to the first pressure adjustment line and the third pressure adjustment line; a first pressure regulating valve disposed on the first pressure regulating line and regulating a vacuum pressure formed by the first pressure regulating line; and a second pressure regulating valve disposed in the third pressure regulating line and regulating a vacuum pressure formed by the third pressure regulating line, wherein the main processing apparatus further includes: and a control means for controlling the opening and closing of the first pressure regulating valve and the third pressure regulating valve to form the same pressure between the inner space of the transition chamber and the plasma processing space of the main processing chamber.
As an example, the substrate supporting unit may include: a dielectric plate; a base plate supporting the dielectric plate; a plurality of support pins protruding above the dielectric plate to support the mounted substrate in a floating manner; and a focus ring disposed around the dielectric plate to support the substrate and adjust the plasma density, wherein the focus ring is configured to mount the substrate on the plurality of support pins without inducing electrostatic force or suction force.
Further, the substrate bonding system may further include: a cleaning device for cleaning the surface of the substrate; and a transfer module configured between the substrate processing apparatus, the substrate bonding apparatus, and the cleaning apparatus to transfer the substrate.
Still further, the substrate bonding system may further include: and an inspection device for inspecting the bonding state between the substrates.
As an example, the substrate bonding system may further include: and an alignment device arranged at the front end of the substrate bonding device and aligned with the substrate.
In addition, an embodiment of the substrate bonding method according to the present invention may include: a substrate mounting step of mounting a substrate on a substrate supporting unit of a process chamber provided in a main process chamber without chucking by electrostatic force; a pressure adjusting step of adjusting a pressure of a separation space between the substrate supporting unit and the substrate by a pressure adjusting unit corresponding to a pressure of a plasma processing space of the process chamber; a substrate processing step of hydrophilizing a surface of the substrate by performing a plasma process by the main processing apparatus; and a substrate bonding step of bonding the two substrates by a dehydration reaction by the substrate bonding device.
Preferably, the substrate bonding method may further include, after performing the substrate processing step: and a cleaning step of cleaning the surface of the substrate by a cleaning device.
As an example, in the pressure adjustment step, the control means may control the first pressure adjustment valve disposed in the first pressure adjustment line to adjust the pressure to the plasma processing space, and control the second pressure adjustment valve disposed in the second pressure adjustment line to adjust the pressure to the space so that the pressure to the plasma processing space and the space becomes the same.
As an example, in the substrate processing step, the control means may sense the pressure to the plasma processing space by a first pressure gauge and the pressure to the space by a second pressure gauge, so that the pressure of the plasma processing space and the pressure of the space are kept the same by the pressure adjusting unit.
Further, the substrate bonding method may further include: a reduced pressure environment creation step of transferring a substrate to a transition chamber of a transition device and adjusting the pressure of an inner space of the transition chamber by the pressure adjustment unit corresponding to the pressure of a plasma processing space of the process chamber; and a substrate loading step of transferring the substrate from the transition chamber to the process chamber.
Still further, the substrate bonding method may further include: a reduced pressure environment creation step of adjusting the pressure of the inner space of the transition chamber by the pressure adjustment unit corresponding to the pressure of the plasma processing space of the process chamber; and a substrate carrying-out step of carrying out the substrate from the process chamber to the transition chamber.
As an example, the substrate bonding step may further include a substrate alignment step of aligning the first substrate and the second substrate, the surfaces of which are hydrophilized by the alignment device.
As an example, the substrate bonding step may further include a first substrate and a second substrate bonding step of bonding the hydrophilized surfaces of the first substrate and the second substrate to each other by a substrate bonding device.
Further, the substrate bonding method may further include: and an inspection step of inspecting the bonding state of the bonding substrate by an inspection device.
An embodiment of the substrate bonding system according to the present invention may include: a substrate processing apparatus including a main processing apparatus hydrophilizing a substrate surface by a plasma process, the main processing apparatus including a process chamber providing a plasma processing space, a substrate supporting unit disposed in the plasma processing space and receiving a supporting substrate without inducing an electrostatic force and without an adsorption force, and provided with a space between an upper surface and a lower surface of the substrate, a door member inducing a plasma in the plasma processing space, and a pressure regulating unit disposed at a front end of the main processing apparatus and including a transition chamber maintaining a process environment of the main processing apparatus and a substrate transfer robot disposed in an inner space of the transition chamber and transferring the substrate to the main processing apparatus, the door member selectively opening and closing between the main processing apparatus and the transition chamber, the pressure regulating unit regulating a pressure between the space between the substrate supporting unit and the substrate and the plasma processing space of the process chamber, and between the process chamber and the inner space of the transition chamber; a cleaning device for cleaning the surface of the substrate; a substrate bonding device for bonding substrates having hydrophilized surfaces by dehydration reaction; an inspection device for inspecting a bonding state between the substrates; and a transfer module that transfers the substrate among the substrate processing apparatus, the cleaning apparatus, the substrate bonding apparatus, and the inspection apparatus.
According to the present invention as described above, after hydrophilization of the substrate surface by plasma treatment, substrate bonding can be stably performed by a sufficient dehydration reaction by performing a bonding process between substrates in a short time.
In particular, the clamping process induced by electrostatic force and the unclamping process eliminated by electrostatic force are omitted in the present invention, so that the hydrophilization process of the substrate surface and the bonding process between the substrates can be performed in a short time while the bonding between the substrates is stably performed by a sufficient dehydration reaction.
Further, in the present invention, the pressure of the partition space between the execution substrate and the substrate supporting unit may be formed to be the same as the pressure of the inner space of the main process chamber in which the plasma process is executed by the pressure adjusting member, thereby preventing the substrate mounted on the substrate supporting unit from being deformed due to the pressure difference.
In the present invention, the pressure between the main processing chamber and the transition chamber can be made the same by the pressure adjusting means, so that deformation of the substrate due to the pressure can be prevented when the main processing chamber is opened for transfer of the substrate.
The effects of the present invention are not limited to the above-mentioned effects, and those having ordinary skill in the art to which the present invention pertains can clearly understand yet other effects not mentioned from the following description.
Drawings
Fig. 1 illustrates a concept to which a substrate bonding process for the present invention is applied.
Fig. 2 shows an example of an electrostatic chuck for attracting and supporting a substrate by electrostatic force in a substrate processing apparatus that performs a plasma process.
Fig. 3 illustrates an embodiment of a substrate bonding system according to the present invention.
Fig. 4 illustrates an embodiment of a substrate processing apparatus for a substrate bonding system according to the present invention.
Fig. 5 shows another embodiment of a substrate processing apparatus for a substrate bonding system according to the present invention.
Fig. 6 is a flow chart illustrating an embodiment of a method for bonding substrates according to the present invention.
Fig. 7 is a flowchart showing an embodiment of a plasma process for hydrophilization of a substrate surface in the substrate bonding method according to the present invention.
(Description of the reference numerals)
10: Substrate bonding system
30: Box table
50: Transfer module
100: Substrate processing apparatus
100: Substrate processing apparatus
110: Main processing device
111: Main processing chamber
115: Plasma processing space
120: Substrate supporting unit
125: Separate the space
150: Pressure regulating unit
160: Transition device
170. 220: Door component
180: Control member
210: Substrate bonding device
230: Cleaning device
250: Alignment device
270: Inspection apparatus
Detailed Description
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited or restricted by the embodiments.
In order to illustrate the invention and the operational advantages of the invention and the objects achieved by the practice of the invention, a preferred embodiment of the invention will be illustrated and described with reference to the embodiment.
First, the terminology used in the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application, as singular forms may include plural forms unless clearly indicated to the contrary in the context. Furthermore, in the present application, the terms "comprises" or "comprising," etc., are used to specify the presence of stated features, integers, steps, operations, elements, components, or groups thereof, but are to be understood to not preclude the presence or addition of one or more other features or integers, steps, operations, elements, components, or groups thereof.
In describing the present invention, a detailed description thereof is omitted when it is determined that a detailed description of related known structures or functions may obscure the gist of the present invention.
The present invention proposes a substrate bonding technique for hydrophilizing a substrate surface and bonding substrates to each other by dehydration reaction.
Fig. 1 illustrates a concept for a substrate bonding process to which the present invention is applied.
When the surface of the silicon substrate is subjected to plasma treatment, the surface energy of the bonding surface of the substrate can be increased to induce covalent bonds between interfaces. When the hydrophobicity (Hydropjobic) of the surface of the silicon substrate is converted to hydrophilicity (Hydrophilie) by plasma treatment, the generation of hydroxyl groups (-OH) can be induced on the surface of the substrate.
After the plasma treatment, a rinsing process for the substrate surface may be performed to activate the generation of hydroxyl (-OH) groups and clean impurities.
The surfaces of the two substrates subjected to such a process may be bonded to each other, and the surfaces between the two substrates may be bonded by dehydration reaction according to covalent bonds of oxygen (O).
The bonding by such covalent bond has weaker bonding force, and thus eutectic (Eutectic)/TLP/Diffusion (Diffusion)/Fusion bonding (Fusion bonding) can be induced by a high-temperature heating process, and has stronger bonding force than a metal bond by thermal expansion of a metal wiring.
In the substrate bonding process, after hydrophilizing the substrate surface according to the plasma treatment, the substrate bonding can be performed stably by the dehydration reaction only if the bonding process between the substrates is performed for a certain time.
Further, only when the substrates are kept in a flat and spread state, the surfaces between the substrates can be bonded integrally, and when the substrates are distorted, there is a problem that the bonded portions between the substrates cannot be formed properly.
As an example, fig. 2 shows an example of an electrostatic chuck ESC for attracting and supporting a substrate by electrostatic force in a substrate processing apparatus for performing a plasma process.
In a substrate processing apparatus that performs a plasma process, a substrate is generally suctioned and supported by an electrostatic chuck ESC.
The electrostatic chuck ESC may include a base plate 3, a dielectric plate 2, an electrode layer 4, a DC power supply section 5, and the like.
The dielectric plate 2 is fixedly supported by the base plate 3, and the electrode layer 4 is provided on the dielectric plate 2. Here, the dielectric plate 2 may be made of a substance in which a neutral atom or molecule has polarity and cations and anions are displaced from each other according to application of a DC power.
When DC power is applied to the electrode layer 4 by the DC power supply section 5, polarization of the dielectric plate 2 may occur, and opposite polarity may occur on the surface of the substrate W. In this way, as the polarity of the dielectric plate 2 and the surface of the substrate W have opposite polarities to each other, the substrate W can be fixed by the generated attractive force.
When such an electrostatic chuck ESC is applied, the substrate may be clamped by a clamping (Chucking) process that induces electrostatic forces and induces attractive forces between polarities. In addition, when separating a substrate in an electrostatic chuck ESC, conversely, the substrate may be separated by removing an attraction force to the substrate through a dechucking (De-Chucking) process that removes a polarity generated by an electrostatic force.
It takes a considerable time to perform the clamping process using the electrostatic force and the unclamping process eliminating the electrostatic force, whereby a portion of hydroxyl groups (-OH) of the substrate surface subjected to the hydrophilization treatment may disappear. As the hydroxyl groups on the substrate surface disappear, there is a problem that dehydration reaction between substrates cannot be sufficiently obtained to be stably bonded.
In order to solve such a problem, in the present invention, a clamping process induced by electrostatic force and a unclamping process eliminated by electrostatic force are not applied, but the substrate is simply seated on the substrate supporting unit, so that a hydrophilization process of the substrate surface and a bonding process between the substrates can be performed in a short time to stably bond between the substrates through a sufficient dehydration reaction.
Further, in the plasma process, a temperature adjusting gas such as helium (He) is injected into the back surface of the substrate in order to adjust the temperature of the substrate, and for this purpose, support pins or bumps (holes) 6 for floating the substrate W may be provided on the electrostatic chuck ESC. In addition, a Dam (Dam) 7 or the like for preventing gas leakage may be provided on the outer periphery. A Focus ring (Focus ring) for plasma density adjustment may be disposed at the outer periphery.
With such a configuration of the electrostatic chuck ESC, a space S is provided between the lower surface of the substrate W and the upper surface of the electrostatic chuck ESC, and gas can be injected into the space S.
However, the pressure of the partitioned space between the electrostatic chuck ESC and the substrate W may be different from the pressure of the inner space of the chamber in which the plasma process is performed, resulting in a problem in that the substrate W mounted on the electrostatic chuck ESC is distorted due to the formation of the pressure difference.
In addition, there is a pressure difference between the inside and the outside of the chamber in which the plasma process is performed, and when the inside of the chamber is opened for transferring the substrate, a problem of warpage of the substrate W may occur due to the pressure difference between the inside and the outside.
In order to solve such a problem, in the present invention, the pressure of the space separating the substrate and the substrate supporting unit is formed to be the same as the pressure of the inner space of the main process chamber performing the plasma process by the pressure adjusting member, so that the deformation of the substrate due to the pressure difference can be prevented.
In addition, in the present invention, the same pressure may be formed between the main process chamber and the transition chamber by the pressure adjusting member, thereby preventing deformation of the substrate due to a pressure difference when the main process chamber is opened for transferring the substrate.
The invention is carefully examined by way of example.
Fig. 3 illustrates an embodiment of a substrate bonding system according to the present invention.
The substrate bonding system 10 may include a substrate processing apparatus 100, a substrate bonding apparatus 210, a cleaning apparatus 230, an alignment apparatus 250, an inspection apparatus 270, and the like. In addition, the substrate bonding system 10 may include a cassette stage 30, a transfer module 50, and the like.
The cassette stage 30 may provide a space for storing substrates. A carrier C (FOUP) capable of accommodating a plurality of substrates may be supported on the support plate 31 of the cassette stage 30. The substrate accommodated in the carrier C can be transferred to the transfer module 50 by the transfer robot 33.
The transfer module 50 may include a transfer region that can be connected to the substrate processing apparatus 100, the substrate bonding apparatus 210, the cleaning apparatus 230, the alignment apparatus 250, the inspection apparatus 270, and the like. The transfer robot 55 may be disposed in the transfer area, and the transfer robot 55 may move the substrate to a corresponding apparatus while moving the substrate.
The substrate processing apparatus 100 may hydrophilize a substrate surface by plasma processing on the substrate surface.
As an example, the substrate processing apparatus 100 may include only the main processing apparatus 110 that performs the plasma process, but it is preferable that the substrate processing apparatus 100 may be connected to the main processing apparatus 110 and further include a transition apparatus 160 that transfers the substrate while maintaining the process environment of the main processing apparatus 110. In addition, the substrate processing apparatus 100 may include a door member 170 or the like that selectively opens and closes between the main processing apparatus 110 and the transition apparatus 160 and provides a substrate transfer path.
The substrate processing apparatus 100 will be described in more detail with reference to the following examples.
The cleaning device 230 may clean the surface of the substrate subjected to the plasma treatment by the substrate processing apparatus 100. The cleaning device 230 may apply DI water on the surface of the substrate using a spin coater. DI water not only cleans the substrate surface but also allows hydroxyl (-OH) groups to bond well to the substrate surface, thereby more easily supporting Hybrid Bonding.
The alignment device 250 may sense a flat portion (or cut) of the substrate to align the substrate position. In particular, the alignment device 250 may prepare substrates to be bonded to each other and align them to be provided to the substrate bonding device 210 before performing a bonding process between the substrates in the substrate bonding device 210.
A gate member 220 may be provided between the alignment device 250 and the substrate bonding device 210 to selectively provide a substrate transfer path between the alignment device 250 and the substrate bonding device 210.
The substrate bonding apparatus 210 may include a lower chuck structure and an upper chuck structure. The upper chuck structure may fix the first substrate, and the lower chuck structure may fix the second substrate.
As an example, either or both of the upper chuck structure and the lower chuck structure can be lifted and lowered, so that the first substrate and the second substrate can be bonded while pressing the first substrate and the second substrate. As an example, a pusher is disposed on the upper chuck structure and the lower chuck structure, and a bonding process can be performed between the first substrate and the second substrate from the center portion to the periphery of the substrates by lifting and lowering the pusher.
As another example, the upper chuck structure and the lower chuck structure may be provided with a pressurizing member that expands by air or gas injection, and the bonding process may be performed between the first substrate and the second substrate from the center portion of the substrate to the outer periphery by the expansion operation of the pressurizing member.
The inspection device 270 may inspect the bonding state of the bonded substrates. As an example, the inspection device 270 may include a vision unit and analyze a photographed image through the vision unit to inspect the bonding state of the bonded substrate.
Further, the substrate bonding system 10 may further include an annealing device (not shown) for heat treating the bonded substrates. In addition, the substrate bonding system 10 may further include a polishing device (not shown) for polishing the surface of any one or more of the bonded substrates.
A substrate processing apparatus for a substrate bonding system according to the present invention will be described more closely by way of examples.
Fig. 4 shows an embodiment of a substrate processing apparatus for a substrate bonding system according to the present invention.
The substrate processing apparatus may include a main processing apparatus 110 that performs a plasma process on a surface of a substrate.
In an exemplary embodiment, the main processing device 110 may apply an inductively coupled plasma (ICP, induced coupled plasma) approach.
Here, the main processing device 110 is not limited to the inductively coupled plasma system. For example, various methods such as a capacitive coupling plasma method and a microwave plasma method can be applied, and thus the structure can be changed as appropriate.
The main processing apparatus 110 may include a process chamber 111, a substrate supporting unit 120, plasma generating units 130a, 130b, a process gas supply unit 141, a temperature-adjusting gas supply unit 145, a pressure adjusting unit 150, a control member 180, and the like.
The process chamber 111 may provide a closed plasma processing space 115 for performing a plasma process on a surface of the substrate W. The process chamber 111 may be a cylindrical vacuum chamber. The process chamber 111 may comprise a metal such as aluminum, stainless steel, or the like. The process chamber 111 may include a cover 113 covering an upper portion. The cover 113 may close an upper portion of the process chamber 111.
The substrate supporting unit 120 may be disposed at an inner lower side region of the process chamber 111. The substrate may be placed and supported at the substrate supporting unit 120.
In the present invention, the substrate supporting unit 120 may place the substrate without inducing electrostatic force and without adsorbing force. That is, the substrate supporting unit 120 may not apply the substrate chucking method according to the electrostatic force of the electrostatic chuck ESC. The substrate supporting unit 120 may not have a clamping structure for holding the fixed substrate.
As an example, the substrate supporting unit 120 may use an electrostatic chuck ESC, or may not perform a clamping process for inducing an electrostatic force by applying a DC power. Of course, the substrate supporting unit 120 does not need to induce a clamping process by inducing electrostatic force, and thus may be configured differently from the conventional electrostatic chuck ESC.
The substrate supporting unit 120 may be configured to fixedly support the dielectric plate 123 on the base plate 121.
A plurality of support pins 127 for floating the substrate W may be provided on the upper surface of the dielectric plate 123. A Dam (Dam) or a focus ring 129 for preventing gas leakage may be disposed at the periphery of the dielectric plate 123.
When the substrate support unit 120 mounts a substrate, a separation space 125 may be formed between an upper surface of the dielectric plate 123 and a lower surface of the substrate W by the support pins 127 and the focus ring 129.
The substrate support unit 120 may be provided with a gas supply channel capable of supplying a gas to the upper surface of the dielectric plate 123. The temperature-adjusting gas supply unit 145 may supply gas for adjusting the temperature of the substrate to the partitioned space 125 through a gas supply flow path. Here, various inert gases such as helium (He) can be used as the temperature adjusting gas.
The plasma generating units 130a, 130b may include an upper plasma generating part 130a, a lower plasma generating part 130b, and the like.
The upper plasma generating part 130a may include an upper electrode 131a, a source RF power source 133a, a source RF matcher 135a, and the like.
The upper electrode 131a may be disposed above the outside of the process chamber 111 in a manner opposite to the lower electrode 131 b. As an example, the upper electrode 131a may be disposed on the cover 113. Unlike this, the upper electrode 131a may also be formed above the process chamber 111.
The upper electrode 131a may include a high frequency RF antenna. The antenna may have a planar coil shape. The cover 113 may include a dielectric window (DIELECTRIC WINDOW) in the shape of a disk. The dielectric window may comprise a dielectric substance. For example, the dielectric window may comprise aluminum oxide (Al 2O3). The dielectric window may have a function of transmitting power of the antenna to the inside of the process chamber 111.
For example, the upper electrode 131a may include a coil in a spiral shape or a concentric circle shape. The coil may generate an inductively coupled plasma (inductively coupled plasma) in the plasma processing space 115 of the process chamber 111. The number, arrangement, etc. of the coils may be changed as needed.
The upper plasma generating part 130a may apply plasma source power to the upper electrode 131 a. For example, the upper plasma generating section 130a may include a source RF power source 133a, a source RF matching unit 135a, and the like as plasma source elements. The source RF power source 133a may generate a high frequency RF signal. The source RF matcher 135a may match the impedance of the RF signal generated in the source RF power source 133a and control plasma to be generated using the antenna coil of the upper electrode 131 a.
The lower plasma generating part 130b may include a lower electrode 131b, a bias RF power source 133b, a bias RF matcher 135b, and the like.
The lower electrode 131b may be disposed inside the dielectric plate 123.
The lower plasma generating part 130b may apply bias source power to the lower electrode 131 b. For example, the lower plasma generating section 130b may include a bias RF power supply 133b and a bias RF matcher 135b as bias elements. The lower electrode 131b may attract plasma atoms or ions generated within the process chamber 111. The bias RF power source 133b may generate a high frequency RF signal. The bias RF matcher 135b may match the impedance of the bias RF by adjusting the bias voltage and bias current applied to the lower electrode 131 b. The bias RF power source 133b and the source RF power source 133a may be synchronous or asynchronous with each other through the synchronizer of the control member 180.
The control member 180 may control the plasma generating units 130a, 130b to selectively activate the plasma in the plasma processing space 115.
The control means 180 may include a microcomputer and various interfaces, and control the operation of the main processing device 110 according to programs and recipe information stored in an external memory or an internal memory.
In particular, the control member 180 may control generation of hydroxyl (-OH) groups on the surface of the substrate W by activating plasma in the plasma processing space and supplying process gas.
The Process Gas supply unit 141 may supply a Process Gas (Process Gas) to the plasma processing space. The process gas supply unit 141 may supply a carrier gas (CARRIER GAS) or the like in addition to the process gas. As the process gas, a gas such as N 2、O2 may be selected according to the characteristics of the target substrate to be plasma-treated. The carrier gas may be inert gas such as Ar as a gas that does not react with the process gas and does not react with the upper surface of the substrate W.
A showerhead 117 may be disposed above the plasma processing space 115 of the process chamber 111.
Gas injection holes may be provided in the showerhead 117. The gas supplied through the process gas supply unit 141 may be diffused toward the plasma processing space 115 through the showerhead 117.
The pressure adjusting unit 150 may adjust the pressures of the two spaces such that the pressure of the separation space 125 formed between the upper surface of the substrate supporting unit 120 and the lower surface of the substrate W is the same as the pressure of the plasma processing space 115 of the process chamber 111.
The pressure regulating unit 150 may include a vacuum pump 151, a first pressure regulating line 152, a first pressure regulating valve 153, a second pressure regulating line 154, a second pressure regulating valve 155, and the like.
The vacuum pump 151 may discharge or suck air for vacuum pressure formation.
The first pressure adjustment line 152 may be coupled to the process chamber 111 to provide a vacuum pressure in the plasma processing space 115.
The first pressure regulating valve 153 may be disposed at the first pressure regulating line 152 to regulate the vacuum pressure of the plasma processing space 115 passing through the first pressure regulating line 152.
The second pressure adjusting line 154 may be connected to the substrate supporting unit 120 to provide vacuum pressure in the spaced-apart space 125 formed between the upper surface of the substrate supporting unit 120 and the lower surface of the substrate W.
As an example, the second pressure adjusting line 154 may penetrate the dielectric plate 123 of the substrate supporting unit 120 and be connected to an upper surface of the dielectric plate 123.
The second pressure regulating valve 155 may be disposed at the second pressure regulating line 154 to regulate the vacuum pressure of the partitioned space 125 passing through the second pressure regulating line 154.
The control member 180 may control the air discharge and suction of the vacuum pump 151, and control the first pressure regulating valve 153 and the second pressure regulating valve 155 so as to regulate the pressures of the two spaces such that the pressure of the separation space 125 formed between the upper surface of the substrate supporting unit 120 and the lower surface of the substrate W is the same as the pressure of the plasma processing space 115 of the process chamber 111.
As an example, a first pressure gauge for measuring the pressure of the plasma processing space 115 may be provided in the process chamber 111, and a second pressure gauge for measuring the pressure of the partitioned space 125 may be provided in the substrate supporting unit 120.
The control means 180 may control the vacuum pump 151, the first pressure regulating valve 153, and the second pressure regulating valve 155 based on pressure measurement values measured by the first pressure gauge and the second pressure gauge, respectively, so that the pressure of the separation space 125 formed between the upper surface of the substrate supporting unit 120 and the lower surface of the substrate W is maintained to be the same as the pressure of the plasma processing space 115 of the process chamber 111.
As described above, the substrate processing apparatus according to the present invention is capable of stably joining substrates by a sufficient dehydration reaction by simply placing the substrates on the substrate supporting unit without applying the clamping of the suction supporting substrate and the unclamping of the suction supporting substrate, and performing the hydrophilization process of the substrate surface and the bonding process between the substrates in a short time.
In addition, the substrate processing apparatus according to the present invention may be provided with a pressure adjusting unit to maintain the pressure of the partitioned space between the substrate supporting unit and the substrate to be the same as the pressure of the plasma processing space of the process chamber, thereby preventing deformation of the substrate due to the pressure difference.
Fig. 5 shows another embodiment of a substrate processing apparatus for a substrate bonding system according to the present invention.
In describing the present embodiment, a description thereof or a brief description thereof will be omitted for the portions repeated or similar to those described by the embodiment of fig. 4 described above.
The substrate processing apparatus 100 may include a main processing apparatus 110 and a transition apparatus 160.
The main processing device 110 may be constructed similarly to the configuration described by the embodiment of fig. 4 described above.
The transition device 160 may be configured to interface with the main processing device 110. The transfer module 50 may be disposed between the transition device 160 and the main processing device 110.
The transition device 160 may supply the substrate W to the main processing device 110 or draw the substrate W from the main processing device 110 while maintaining the process environment atmosphere of the main processing device 110.
The transition device 160 may include a transition chamber 161, a substrate transfer robot 165, and the like.
The transition chamber 161 may provide a closed interior 163 for substrate transfer.
The substrate transfer robot 165 may be disposed in the inner space 163 of the transition chamber 161 and transfer the substrate between the transition chamber 161 and the process chamber 111.
As an example, the substrate transfer robot 165 may include an articulated robot capable of holding a substrate while operating in multiple stages. The substrate may be transferred to the plasma processing space 115 of the process chamber 111 and loaded on the substrate supporting unit 120 by a robot operating at multiple stages. In addition, the substrate mounted on the substrate supporting unit 120 may be unloaded and drawn out to the inner space 163 of the transition chamber 161 by the robot.
A door member 170 may be provided between the transition device 160 and the main processing device 110.
The door member 170 penetrating each other for the entrance and exit of the substrate W may be provided at the side wall of the process chamber 111 and the side surface of the transition chamber 161. The substrate W may be transferred between the process chamber 111 and the transition chamber 161 by opening the door member 170.
The door member 170 may include a door, a door driver, and the like. The door may be opened and closed according to the operation of the door driver while forming a part of the outer walls of the process chamber 111 and the transition chamber 161. Access to the process space of the process chamber 110 may be selectively provided according to the opening and closing of the door. The door actuator may include a perforated cylinder, a motor, etc. to raise and lower the door and control the opening and closing.
The control member 180 may control the transition device 160 and the gate member 170 to load and unload the substrate W in the main process device 110.
The pressure regulating unit 150 may further include a third pressure regulating line 156, a third pressure regulating valve 157, and the like, in addition to the structure described by the foregoing fig. 4.
The third pressure adjustment line 156 may be connected to the transition chamber 161 to provide vacuum pressure to the interior 163 of the transition chamber 161.
The third pressure regulating valve 157 may be disposed at the third pressure regulating line 156 to regulate the vacuum pressure to the inner space 163 of the transition chamber 161 passing through the third pressure regulating line 156.
The control member 180 may control the air discharge and suction of the vacuum pump 151, and control the third pressure regulating valve 157 to regulate the pressure to the inner space 163 of the transition chamber 161.
As an example, the transition chamber 161 may be provided with a third pressure gauge for measuring the pressure of the internal space 163.
The control means 180 may confirm the pressure to the inner space 163 of the transition chamber 161 by the third pressure gauge and make the pressure to the inner space 163 of the transition chamber 161 the same as the pressure to the plasma processing space 115 of the process chamber 111.
As described above, the substrate processing apparatus according to the present invention may be provided with the pressure adjusting unit to make the pressure of the plasma processing space of the process chamber and the pressure of the inner space of the transition chamber identical, thereby preventing deformation of the substrate due to a pressure difference when opening between the process chamber and the transition chamber.
In addition, in the present invention, by disclosing a substrate bonding method from the substrate bonding system described above, the following is made with reference to examples for the substrate bonding method according to the present invention.
The substrate bonding method according to the present invention is implemented in the substrate bonding system described above, together with reference to the embodiments of the substrate bonding system according to the present invention described above.
Fig. 6 is a flowchart illustrating an embodiment for a substrate bonding method according to the present invention.
The substrate may be carried into the main processing apparatus 110 of the substrate processing apparatus 100, and placed on the substrate supporting unit 120 (S110).
At this time, the substrate supporting unit 120 may simply place and support the substrate over the plurality of supporting pins 127 without performing a clamping process of sucking the substrate.
In a state where the substrate is mounted on the substrate supporting unit 120, the pressure of the space 125 between the substrate supporting unit 120 and the substrate W is adjusted (S130) so as to be equal to the pressure of the plasma processing space 115 of the process chamber 111.
For example, the control member 180 may control the pressure adjusting unit 150 to suck air into the partitioned space 125 between the substrate supporting unit 120 and the substrate W or to discharge air into the partitioned space 125 to adjust the pressure of the partitioned space 125.
The pressure of the separation space 125 between the substrate support unit 120 and the substrate W and the pressure of the plasma processing space 115 of the process chamber 111 may be maintained to be the same as each other by adjusting the pressure of the separation space 125 between the substrate support unit 120 and the substrate W.
The control member 180 can grasp the pressure change of the plasma processing space 115 by a first pressure gauge disposed in the process chamber 111, and can grasp the pressure change of the partitioned space 125 between the substrate support unit 120 and the substrate W by a second pressure gauge disposed in the substrate support unit 120.
If a pressure change is sensed, the control member 180 may adjust the pressure through the pressure adjusting unit 150 so that the pressures of the two spaces 115, 125 remain the same.
In the case where the pressure of the separation space 125 between the substrate supporting unit 120 and the substrate W and the pressure of the plasma processing space 115 of the process chamber 111 are maintained to be the same as each other, a plasma process for the surface of the substrate W may be performed (S150).
The control member 180 may control the plasma generating units 130a, 130b to activate plasma in the plasma processing space 115 and control the process gas supply unit 141 to selectively supply the process gas and the carrier gas to the plasma processing space 115.
The hydrophobic property of the surface of the substrate W can be changed to hydrophilicity by the plasma treatment on the surface of the substrate W (S170) and hydroxyl groups (-OH) can be induced to be generated on the surface of the substrate W.
When the plasma process for the substrate surface is completed, the substrate is carried out from the main processing apparatus 110, but in this case, as described above, the clamping process by electrostatic force is not performed when the substrate supporting unit 120 is placed on the substrate, and therefore, the unclamping process is not required when the substrate is separated from the substrate supporting unit 120. Therefore, the substrate is immediately carried out without delay after the plasma process for the substrate surface is completed.
Then, the substrate W is transferred to the cleaning apparatus 230, and the cleaning process for the substrate surface is performed (S210).
The cleaning device 230 may apply DI water to the surface of the substrate using a spin coater. By this cleaning treatment, it is possible to remove foreign matter on the surface of the substrate while more activating hydroxyl groups (-OH) on the surface of the substrate.
Due to hydrophilization of the substrate surface, the substrate can be transferred to the alignment device 250 in a state where hydroxyl groups (-OH) are sufficiently provided.
The alignment device 250 may hydrophilize the surface to provide a first substrate and a second substrate provided with hydroxyl groups (-OH).
The alignment device 250 may align the first substrate and the second substrate and transfer to the substrate bonding device 210 (S230).
The substrate bonding apparatus 210 may face the surface of the first substrate and the surface of the second substrate on which the hydroxyl group (-OH) is formed to each other, and bond the first substrate and the second substrate through a dehydration reaction according to a covalent bond of oxygen (O) (S250).
As an example, the substrate bonding apparatus 210 may be provided with a surface on which the hydroxyl group (-OH) of the first substrate is formed by the upper chuck structure, and a surface on which the hydroxyl group (-OH) of the second substrate is formed by the lower chuck structure.
The first substrate and the second substrate may be joined by raising or lowering the upper chuck structure and the lower chuck structure in correspondence with each other.
Preferably, the push rod may be formed to be gradually engaged from the central portions to the peripheral portions of the first and second substrates while being gradually operated from the central portions to the peripheral portions of the first and second substrates.
The bonded substrate can be carried out from the substrate bonding apparatus 210 and transferred to the inspection apparatus 270.
The inspection device 270 may perform inspection of the bonding state of the bonded substrates (S270).
Thus, in the present invention, when the plasma process is performed on the surface of the substrate, the clamping process and the unclamping process of the substrate are not performed at the substrate supporting unit, so that the substrate whose surface is hydrophilized can be immediately bonded by the plasma treatment without delay.
Further, substrate deformation such as warpage of the substrate according to a pressure difference may be prevented by the present invention, but in connection therewith, fig. 7 is a flowchart showing an embodiment of a plasma process for hydrophilization of the substrate surface in the substrate bonding method according to the present invention.
The present embodiment may be a specific process for a process of placing a substrate at a substrate supporting unit (S110) and performing a plasma process (S150) to hydrophilize a substrate surface (S170) in the embodiment of fig. 6.
The substrate to be subjected to the plasma process may be transferred to the transition chamber 161 of the substrate processing apparatus 100 (S121).
As the substrate is transferred to the transition chamber 161 of the transition device 160 by the transfer module 50, the transfer area of the transfer module 50 and the inner space 163 of the transition chamber 161 are opened to each other, so that the inner space 163 of the transition chamber 161 may be changed to be different with respect to the process chamber 111 of the main processing device 110.
In a state where the substrate is stored in the inner space 163 of the transition chamber 161, the inner space 163 of the transition chamber 161 is closed from the transfer region of the transfer module 50, and a reduced pressure environment is created in the inner space 163 of the transition chamber 161 (S123).
The pressure of the inner space 163 of the transition chamber 161 is adjusted to be the same pressure corresponding to the inner environment of the process chamber 111 of the main processing device 110 (S125) so that the inner space 163 of the transition chamber 161 is similar to the plasma processing space 115 environment of the process chamber 111.
In a state where the inner space 163 of the transition chamber 161 should create an environment similar to the plasma processing space 115 of the process chamber 111, the door of the door member 170 may be opened and the substrate may be transferred to the process chamber 111 by the substrate transfer robot 165 of the transition device 160 (S131).
The substrate may be seated on the substrate supporting unit 120 of the main processing apparatus 110 by the substrate transfer robot 165 of the transition apparatus 160 (S133), and the door of the door member 170 is closed to block the opening between the transition chamber 161 and the process chamber 111.
In a state where the substrate support unit 120 mounts the substrate W, the pressure of the separation space 125 formed between the substrate support unit 120 and the substrate W and the pressure of the plasma processing space 115 of the process chamber 111 may be adjusted to be identical to each other by the pressure adjusting unit 150 (S135) (S137).
Meanwhile, the pressure of the separation space 125 formed between the substrate support unit 120 and the substrate W and the pressure of the plasma processing space 115 of the process chamber 111 may be continuously measured while the pressures are adjusted so as to be maintained at the same pressure as each other.
Further, a plasma process for the surface of the substrate W may be performed by the main processing apparatus 110 (S150). The surface of the substrate W is rendered hydrophilic by plasma treatment on the surface of the substrate W.
Before the substrate processed by the plasma is carried out, the pressure of the internal space 163 of the transition chamber 161 may be different from the internal environment of the process chamber 111, and thus the pressure of the internal space 163 of the transition chamber 161 may be adjusted to create a reduced pressure environment (S161).
In a state where the pressure of the inner space 163 of the transition chamber 161 is the same as the pressure of the plasma processing space 115 of the process chamber 111, the door of the door member 170 may be opened and the substrate may be transferred to the transition chamber 161 (S163).
Thus, in the present invention, in transferring the substrate, the surface of which is hydrophilized, into the transition chamber by the plasma treatment, since warpage of the substrate may occur according to a pressure difference different from each other according to the environment of the process chamber and the environment of the transition chamber, the substrate may be transferred in a state in which the environments of the process chamber and the transition chamber are formed to be identical to each other by the pressure adjusting unit, thereby preventing deformation of the substrate.
The above description is merely illustrative of the technical idea of the present invention, and various modifications and variations can be made without departing from the essential characteristics of the present invention as long as it is a person having ordinary knowledge in the technical field to which the present invention belongs. Therefore, the embodiments described in the present invention are not intended to limit the technical concept of the present invention, but rather to illustrate the technical concept of the present invention, and the technical concept of the present invention is not limited to these embodiments. The scope of the present invention should be construed in accordance with the appended claims, and all technical ideas within the scope of equivalents thereof should be construed as being included in the scope of the claims of the present invention.

Claims (20)

1. A substrate bonding system, comprising:
A substrate processing apparatus including a main processing apparatus hydrophilizing a substrate surface by a plasma process, and including a process chamber providing a plasma processing space, a substrate supporting unit disposed in the plasma processing space and housing a substrate, and provided with a partition space between an upper surface and a lower surface of the substrate, and a pressure regulating unit inducing plasma in the plasma processing space, the pressure regulating unit regulating pressure between the plasma processing space and the partition space; and
And a substrate bonding device for bonding substrates having hydrophilized surfaces by dehydration reaction.
2. The substrate bonding system according to claim 1, wherein,
The substrate supporting unit receives the supporting substrate without inducing electrostatic force and without adsorbing force.
3. The substrate bonding system according to claim 1, wherein,
The pressure regulating unit includes:
a first pressure regulating line connected to the process chamber to provide a vacuum pressure of the plasma processing space;
A second pressure adjusting line connected to the substrate supporting unit to provide a vacuum pressure of the partitioned space;
a vacuum pump that supplies vacuum pressure to the first pressure adjustment line and the second pressure adjustment line;
A first pressure regulating valve disposed on the first pressure regulating line and regulating a vacuum pressure formed by the first pressure regulating line; and
A second pressure regulating valve disposed on the second pressure regulating line for regulating a vacuum pressure formed by the second pressure regulating line,
The main processing device further includes: and a control means for controlling opening and closing of the first pressure regulating valve and the second pressure regulating valve to form the same pressure between the plasma processing space and the partitioned space.
4. The substrate bonding system according to claim 1, wherein,
The substrate processing apparatus further includes:
a transition device disposed at a front end of the main processing device, and including: a transition chamber that maintains a process environment of the main processing device; and a substrate transfer robot disposed in the transition chamber and transferring a substrate to the main processing apparatus; and
A door member selectively opens and closes between the main processing device and the transition chamber.
5. The substrate bonding system according to claim 4, wherein,
The pressure adjusting unit adjusts pressure between an inner space of the transition device and a plasma processing space of the main processing device.
6. The substrate bonding system according to claim 5, wherein,
The pressure regulating unit includes:
A first pressure regulating line connected to a process chamber of the main processing apparatus to provide a vacuum pressure of the plasma processing space;
A third pressure regulating line connected to the transition chamber to provide a vacuum pressure of the inner space;
A vacuum pump that supplies vacuum pressure to the first pressure adjustment line and the third pressure adjustment line;
A first pressure regulating valve disposed on the first pressure regulating line and regulating a vacuum pressure formed by the first pressure regulating line; and
A second pressure regulating valve disposed on the third pressure regulating line for regulating a vacuum pressure formed by the third pressure regulating line,
The main processing device further includes: and a control means for controlling the opening and closing of the first pressure regulating valve and the third pressure regulating valve to form the same pressure between the inner space of the transition chamber and the plasma processing space of the main processing chamber.
7. The substrate bonding system according to claim 1, wherein,
The substrate supporting unit includes:
A dielectric plate;
A base plate supporting the dielectric plate;
A plurality of support pins protruding above the dielectric plate to support the mounted substrate in a floating manner; and
A focus ring disposed around the dielectric plate to support the substrate and adjust the plasma density,
The support substrate is placed on the plurality of support pins without inducing an electrostatic force and without an adsorption force.
8. The substrate bonding system according to claim 1, wherein,
The substrate bonding system further includes: a cleaning device for cleaning the surface of the substrate; and
And a transfer module configured between the substrate processing device, the substrate bonding device and the cleaning device for transferring the substrate.
9. The substrate bonding system according to claim 8, wherein,
The substrate bonding system further includes:
and an inspection device for inspecting the bonding state between the substrates.
10. The substrate bonding system according to claim 8, wherein,
The substrate bonding system further includes:
And an alignment device arranged at the front end of the substrate bonding device and aligned with the substrate.
11. A substrate bonding method, comprising:
a substrate mounting step of mounting a substrate on a substrate supporting unit of a process chamber provided in a main process chamber without chucking by electrostatic force;
a pressure adjusting step of adjusting a pressure of a separation space between the substrate supporting unit and the substrate by a pressure adjusting unit corresponding to a pressure of a plasma processing space of the process chamber;
a substrate processing step of hydrophilizing a surface of the substrate by performing a plasma process by the main processing apparatus; and
And a substrate bonding step of bonding the two substrates by a dehydration reaction by a substrate bonding device.
12. The method for bonding substrates according to claim 11, wherein,
The substrate bonding method further includes, after performing the substrate processing step: and a cleaning step of cleaning the surface of the substrate by a cleaning device.
13. The method for bonding substrates according to claim 11, wherein,
In the pressure adjusting step, the control means controls the first pressure adjusting valve disposed in the first pressure adjusting line to adjust the pressure to the plasma processing space, and controls the second pressure adjusting valve disposed in the second pressure adjusting line to adjust the pressure to the space so that the pressures to the plasma processing space and the space are the same.
14. The method for bonding substrates according to claim 11, wherein,
In the substrate processing step, the control means senses the pressure to the plasma processing space by a first pressure gauge and the pressure to the partitioned space by a second pressure gauge, so that the pressure of the plasma processing space and the pressure of the partitioned space are kept the same by the pressure adjusting unit.
15. The method for bonding substrates according to claim 11, wherein,
The substrate bonding method further includes: a reduced pressure environment creation step of transferring a substrate to a transition chamber of a transition device and adjusting the pressure of an inner space of the transition chamber by the pressure adjustment unit corresponding to the pressure of a plasma processing space of the process chamber; and
And a substrate carrying-in step of transferring the substrate from the transition chamber to the process chamber.
16. The method for bonding substrates according to claim 11, wherein,
The substrate bonding method further includes: a reduced pressure environment creation step of adjusting the pressure of the inner space of the transition chamber by the pressure adjustment unit corresponding to the pressure of the plasma processing space of the process chamber; and
And a substrate carrying-out step of carrying out the substrate from the process chamber to the transition chamber.
17. The method for bonding substrates according to claim 11, wherein,
The substrate bonding step further includes a substrate alignment step of aligning the first substrate and the second substrate, the surfaces of which are hydrophilized, by an alignment device.
18. The method for bonding substrates according to claim 17, wherein,
The substrate bonding step further includes a first substrate and a second substrate bonding step of opposing and bonding the hydrophilized surfaces of the first substrate and the second substrate by a substrate bonding device.
19. The method for bonding substrates according to claim 11, wherein,
The substrate bonding method further includes:
And an inspection step of inspecting the bonding state of the bonding substrate by an inspection device.
20. A substrate bonding system, comprising:
A substrate processing apparatus including a main processing apparatus hydrophilizing a substrate surface by a plasma process, the main processing apparatus including a process chamber providing a plasma processing space, a substrate supporting unit disposed in the plasma processing space and receiving a supporting substrate without inducing an electrostatic force and without an adsorption force, and provided with a space between an upper surface and a lower surface of the substrate, a door member inducing a plasma in the plasma processing space, and a pressure regulating unit disposed at a front end of the main processing apparatus and including a transition chamber maintaining a process environment of the main processing apparatus and a substrate transfer robot disposed in an inner space of the transition chamber and transferring the substrate to the main processing apparatus, the door member selectively opening and closing between the main processing apparatus and the transition chamber, the pressure regulating unit regulating a pressure between the space between the substrate supporting unit and the substrate and the plasma processing space of the process chamber, and between the process chamber and the inner space of the transition chamber;
A cleaning device for cleaning the surface of the substrate;
a substrate bonding device for bonding substrates having hydrophilized surfaces by dehydration reaction;
an inspection device for inspecting a bonding state between the substrates; and
And a transfer module configured to transfer the substrate between the substrate processing apparatus, the cleaning apparatus, the substrate bonding apparatus, and the inspection apparatus.
CN202311275447.5A 2022-12-13 2023-09-28 Substrate bonding system and substrate bonding method Pending CN118197929A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2022-0174052 2022-12-13
KR1020220174052A KR20240092222A (en) 2022-12-13 2022-12-13 Substrate bonding system and substrate bonding method

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CN118197929A true CN118197929A (en) 2024-06-14

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