TW202403921A - Substrate processing apparatus, substrate bonding system including the same and substrate processing method using the same - Google Patents

Abstract

A substrate processing apparatus, a substrate bonding system including the same and a substrate processing method using the same are provided. The technique is disclosed as follows: ions and free radicals are supplied to the surface of the substrate to create an environment for forming hydroxyl groups (-OH). Ions are filtered out by an ion blocking device, and simultaneously only free radicals are supplied, so that the hydroxyl groups (-OH) can be uniformly formed on the entire surface of the substrate to ensure the uniformity.

Description

Substrate processing device, substrate bonding system including the same, and substrate processing method

As a substrate processing device, a substrate bonding system and a substrate processing method including the same, the present invention relates in more detail to the following technology: supplying ions and free radicals to a substrate surface to create an environment in which hydroxyl groups (-OH) are formed, and filtering through an ion blocker By supplying only radicals along with ions, hydroxyl groups (-OH) are uniformly formed on the entire substrate surface to ensure uniformity.

For high-density integration of semiconductor elements, three-dimensional stacking technology is applied. Compared with two-dimensional integration technology, three-dimensional stacking technology can dramatically increase the integration level per unit area or shorten the length of wiring, which can improve the performance of the chip. Moreover, new characteristics can also be exerted through the combination of different components.

Three-dimensional lamination technology generally includes C2C (Chip to Chip), C2W (Chip to Wafer), and W2W (Wafer to Wafer) methods.

The W2W stacking method is a method of manufacturing wafers through a dicing process after stacking wafers. Compared with the C2C method or the C2W method, the number of bonding processes is greatly reduced, which has the advantage of being conducive to mass production.

In the past, due to various technical limitations and other reasons, the C2C stacking method was used to manufacture three-dimensional stacked semiconductors in the semiconductor manufacturing process. However, considering mass productivity and input-output rate, the trend has gradually changed to the W2W stacking method.

In particular, when looking to improve chip performance by three-dimensional stacking, W2W stacking is a more effective choice than simply considering semiconductor memory and the like simply through stacking.

When applying hybrid bonding by plasma substrate treatment, during the plasma treatment process on the substrate surface, hydroxyl groups (-OH) are repeatedly generated on the substrate surface due to the influence of ions (Ion). and destruction.

Eventually, a phenomenon occurs in which hydroxyl groups (-OH) are not uniformly formed on the entire surface of the substrate after plasma treatment, or the amount of hydroxyl groups (-OH) generated on the substrate surface becomes small.

There is a problem that as the distribution of hydroxyl groups (-OH) over the entire surface of the substrate is not uniform in this way, when the substrates are bonded, covalent bonds are not formed uniformly over the entire surface. In addition, there is a problem that since the amount of hydroxyl groups (-OH) generated on the substrate surface is not sufficient to form sufficient covalent bonds, the overall bonding force of substrate bonding becomes weak.

The present invention is proposed to solve the problems of the conventional technology as described above, and its purpose is to propose a method of creating an environment on a substrate surface, filtering ions, and supplying only radicals, thereby uniformly forming hydroxyl groups (-OH) on the entire substrate surface. And can ensure uniformity.

In particular, its purpose is to solve the following problem: in the conventional technology, during the plasma treatment process on the substrate surface, the generation and destruction of hydroxyl groups (-OH) repeatedly occur on the substrate due to the influence of ions (Ion). As a result, hydroxyl groups (-OH) are not uniformly distributed on the surface of the substrate after plasma treatment.

In addition, it aims to solve the problem that covalent bonds cannot be formed uniformly throughout the entire surface when the substrates are bonded due to the uneven distribution of hydroxyl groups (-OH) on the substrate surface.

Furthermore, the problem is solved: since the amount of hydroxyl groups (-OH) generated on the substrate surface is not sufficient to form sufficient covalent bonds, the overall bonding force of substrate bonding becomes weak.

The objects of the present invention are not limited to the foregoing, and other objects and advantages of the present invention not mentioned can be understood from the following description.

It may be that an embodiment of the substrate processing method according to the present invention for solving the above problems includes: an environment creation step, activating the plasma space and supplying process gas to create an environment in which hydroxyl groups (-OH) are generated on the substrate surface; selectivity The free radical supply step activates the upper plasma space and supplies the process gas, filters the ions (Ion) through the ion blocker and diffuses the free radicals (Radical); and the hydroxyl uniformity adjustment step is uniformly generated in the entire area of the substrate surface Hydroxyl (-OH) to adjust hydroxyl uniformity.

Preferably, the environment creation step may activate the lower plasma space but not the upper plasma space.

As an example, the environment creation step may include: a lower plasma space activation step, activating the lower plasma space through the lower plasma activation part and supplying process gas through the gas supply member; a free radical and ion generation step, in the lower plasma space generating free radicals and ions; and a substrate surface roughness adjustment step in which hydroxyl groups (-OH) are generated in a part of the substrate surface and the substrate surface roughness is adjusted through ions at the same time.

Furthermore, in the lower plasma space activating step, the upper plasma space may not be activated by the upper plasma activating part.

Here, the substrate surface roughness adjusting step may create an environment for the formation of hydroxyl groups (-OH) on the substrate surface by adjusting the substrate surface roughness through ions.

Furthermore, the environment creation step may further include: a diffusion support step, which supplies a carrier gas to support the diffusion of generated free radicals and ions to the substrate surface.

As an example, the step of selectively providing free radicals may include: an upper plasma space activation step, in which the upper plasma space is activated by an upper plasma activating part while supplying process gas through a gas supply member; a free radical and ion generation step, in which Free radicals and ions are generated in the upper plasma space; and a free radical diffusion step filters ions through an ion blocker and diffuses free radicals.

Preferably, the free radical diffusion step may include: a free radical and ion inflow step, so that the free radicals and ions in the upper plasma space flow into the diffusion space of the ion blocker; and an ion filtering step, through the ion blocker Filters ions and allows free radicals to diffuse toward the substrate surface.

Here, in the ion filtering step, the ion blocker may filter the ions using the movement direction characteristics brought by the polarity of the ions.

Furthermore, the step of selectively providing radicals may further include a step of activating the lower plasma space through the lower plasma activating part together with the activation of the upper plasma space.

Furthermore, the step of providing selective free radicals may further include: a diffusion support step, in which the support radicals generated by supplying the carrier gas diffuse toward the surface of the substrate.

As an example, in the hydroxyl uniformity adjustment step, hydroxyl groups (-OH) may be generated in the remaining area except for a part of the substrate surface where hydroxyl groups (-OH) were generated in the environment creation step, and the entire area of the substrate surface may be generated. Hydroxyl groups (-OH) are generated uniformly.

In addition, an embodiment of the substrate processing apparatus according to the present invention may include: a process chamber that provides a processing space for performing plasma processing for generating hydroxyl groups (-OH) on the surface of the substrate; a plasma activation member that is selective Activating the upper plasma space and the lower plasma space in the processing space; a substrate support member configured in the processing space to support the substrate; a gas supply member supplying more than one gas including a process gas to the processing space; an ion blocker, Disposed above the processing space of the process chamber to divide the upper plasma space, filter ions and diffuse free radicals; and a control component that controls the creation of the upper plasma space and the lower plasma space by selectively activating the plasma activation component An environment where hydroxyl groups (-OH) are generated on the substrate surface, and the uniformity of hydroxyl groups (-OH) generated on the substrate surface is controlled.

As an example, the ion blocker may include: an upper plate disposed with gas inflow holes for gas flowing into the upper plasma space; a diffusion space formed below the upper plate; and a lower plate disposed with gas in the diffusion space flowing toward the upper plate. The gas discharge holes are diffused in the processing space, and the gas inflow holes of the upper plate and the gas discharge holes of the lower plate are arranged as virtual elongated holes and are staggered from each other.

Here, the ion blocker may use the lower plate to filter the ions in the diffusion space based on movement direction characteristics brought about by the polarity of the ions.

Furthermore, the gas supply member may supply the carrier gas to the processing space.

Furthermore, it may be that the plasma activation component includes: an upper plasma activation part to activate the upper plasma space; and a lower plasma activation part to activate the lower plasma space.

As an example, the control member activates the lower plasma space and supplies the process gas to generate hydroxyl groups (-OH) in a part of the substrate surface, and adjusts the roughness of the substrate surface through ions, and then activates the upper plasma space and passes the ions through the substrate surface. The blocker filters ions while allowing free radicals to diffuse toward the substrate surface to control the generation of hydroxyl groups (-OH) over the entire area of the substrate surface.

In addition, an embodiment of the substrate bonding system according to the present invention may include: the above-mentioned substrate treatment device, which generates hydroxyl groups (-OH) on the substrate surface through plasma treatment; and a cleaning device, which cleans the substrate surface after plasma treatment. Cleaning processing; a substrate bonding device that bonds substrates with hydroxyl groups (-OH) formed on the surface; and an alignment device that transfers the substrate to the substrate processing device, the cleaning device, and the substrate bonding device.

Furthermore, a preferred embodiment of the substrate processing method according to the present invention may include: a lower plasma space activation step, in which the upper plasma space is not activated by the upper plasma activation part and the lower plasma space is activated by the lower plasma activation part. At the same time, the process gas is supplied through the gas supply component; the lower space free radical and ion generation step generates free radicals and ions in the lower plasma space; the substrate surface roughness adjustment step generates hydroxyl (-OH) in a part of the substrate surface At the same time, the roughness of the substrate surface is adjusted by ions to create an environment for generating hydroxyl groups (-OH); the upper plasma space activation step is to activate the upper plasma space through the upper plasma activation part and at the same time supply the process gas through the gas supply member; The space free radical and ion generation step generates free radicals and ions in the upper plasma space; the diffusion step allows the generated free radicals and ions to diffuse into the diffusion space of the ion blocker; the ion filtration step filters through the ion blocker ions and causing free radicals to diffuse toward the substrate surface; and a hydroxyl uniformity adjustment step to generate hydroxyl (-OH) in the remaining area of the substrate surface and uniformly generate hydroxyl (-OH) in the entire area of the substrate surface to adjust the uniformity.

According to this aspect of the invention, a sufficient amount of hydroxyl groups (-OH) can be formed uniformly on the entire substrate surface.

In particular, it solves the following problem: During the plasma treatment process on the substrate surface, the generation and destruction of hydroxyl groups (-OH) repeatedly occur on the substrate due to the influence of ions (Ion), thus ultimately completing the plasma treatment. The hydroxyl groups (-OH) in the surface of the substrate cannot be uniformly distributed and a sufficient amount of hydroxyl groups (-OH) cannot be generated to enable covalent bonds to be formed uniformly overall when the substrates are joined.

Furthermore, the roughness of the substrate surface is adjusted through a pre-treatment process to create an environment for stable generation of hydroxyl groups (-OH), and then the ions are filtered through an ion blocker and only radicals (Radical) are diffused toward the substrate surface, thereby adjusting Hydroxyl uniformity such that hydroxyl groups (-OH) are evenly distributed in empty areas where hydroxyl groups (-OH) are not formed on the substrate surface.

The effects of the present invention are not limited to the above-mentioned effects, and those with ordinary knowledge in the technical field to which the present invention belongs can clearly understand other effects not mentioned from the following description.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited or restricted by the embodiments.

In order to explain the present invention, operational advantages of the present invention, and objects achieved by implementation of the present invention, preferred embodiments of the present invention are illustrated below and described with reference thereto.

First of all, the terms used in this application are only used to describe specific embodiments and are not used to limit the present invention. As long as different meanings are not clearly indicated in the context, singular expressions may include plural expressions. In addition, in this application, terms such as "comprising" or "having" are used to refer to the existence of features, numbers, steps, actions, constituent elements, parts or their combinations described in the specification, and should be understood as not excluding in advance a or the existence or additional possibility of other features or numbers, steps, actions, components, parts or combinations thereof.

In the description of the present invention, when it is judged that a detailed description of a relevant known configuration or function may obscure the gist of the present invention, the detailed description will be omitted.

The present invention proposes the following substrate processing technology: in a substrate bonding process by hybrid bonding, when hydroxyl groups (-OH) are formed on the substrate surface by plasma treatment, they are uniformly formed on the entire substrate surface. Hydroxyl (-OH) to ensure hydroxyl uniformity (Uniformity).

Figure 1 shows the concept of hybrid bonding to which the present invention is applied.

When plasma is treated, the surface energy of the joint surface of the silicon substrate can be increased to induce covalent bonds between the interfaces. If the hydrophobic (Hydropjobic) characteristics of the silicon substrate surface are converted into hydrophilic (Hydrophilie) properties through plasma treatment, the generation of hydroxyl groups (-OH) can be induced on the substrate surface.

After plasma treatment, a rinsing process can be performed on the substrate surface to activate hydroxyl groups (-OH) to generate and clean impurities.

By making the surfaces of the two substrates that have undergone such a process face each other and bonding them, the two substrate surfaces can be bonded through a dehydration reaction caused by the covalent bond of oxygen (O). The bonding by such a covalent bond has a weak bonding force, so it is formed by inducing eutectic/TLP/diffusion/fusion bonding through a high-temperature heating process using thermal expansion of metal wiring. Metallic bonds have stronger bonding power.

When hydroxyl groups (-OH) are generated on the substrate surface by such plasma treatment, uniform distribution of hydroxyl groups (-OH) on the entire substrate surface and sufficient generation of hydroxyl groups (-OH) are ensured through covalent bonds. Adhesion becomes a very important factor.

Therefore, the present invention proposes a method that can uniformly distribute and generate hydroxyl groups (-OH) over the entire substrate surface and simultaneously generate sufficient hydroxyl groups (-OH) on the substrate surface.

Hereinafter, the present invention will be explained in more detail through examples according to the present invention.

Figure 2 illustrates an embodiment of a substrate bonding system according to the present invention.

The substrate bonding system 1 may include a substrate processing device 10 , a cleaning device 50 , an alignment device 60 and a substrate bonding device 70 disposed in the clean room 20 . In addition, the substrate bonding system 1 may further include a wafer cassette stage 30 provided on one side of the clean room 20 .

In an exemplary embodiment, the clean room 20 may be formed into a rectangular parallelepiped-shaped room having an internal space, and may form a space that cuts off fine dust and impurities while maintaining a cleanliness within a preset range.

The wafer cassette stage 30 can provide a space for storing wafers. A carrier (FOUP) C capable of accommodating a plurality of wafers may be supported on the support plate 32 of the wafer cassette stage 30 . The wafer stored in the carrier C can be transferred to the inside of the clean room 20 by the transfer robot 22 .

The alignment device 60 can sense the positioning edge (or positioning groove) of the wafer W to align the wafer W. The wafers aligned by the alignment device 60 can be transferred to the substrate processing device 10 , the cleaning device 50 , and the substrate bonding device 70 by the transfer robot 22 .

The cleaning device 50 can clean the surface of the wafer substrate that has been plasma processed by the substrate processing device 10 . The cleaning device 50 may use a spin coater to coat deionized (Deionized; DI) water on the surface of the wafer substrate. DI water not only cleans the surface of the wafer substrate but also makes the hydroxyl group (-OH) well bonded to the surface of the wafer substrate, making it easier to form hybrid bonding (Hybrid Bonding).

The substrate engaging device 70 may include a lower chuck structure and an upper chuck structure. It may be that the upper chuck structure fixes the first wafer, and the lower chuck structure fixes the second wafer.

Either one or both of the upper chuck structure and the lower chuck structure can be raised and lowered, so that the first wafer and the second wafer can be bonded while being pressurized. As an example, push rods may be disposed in the upper chuck structure and the lower chuck structure, and the push rods may be raised and lowered to form between the first wafer and the second wafer from the center to the periphery of the wafer substrate. Engagement. Alternatively, the upper chuck structure and the lower chuck structure may be provided with a pressurizing member that expands when air or gas is injected, and the expansion operation of the pressurizing member may be performed from the center to the periphery of the wafer substrate. A bond is formed between one wafer and a second wafer.

Furthermore, the substrate bonding system 1 may further include an annealing device (not shown) for performing heat treatment on the bonded wafer substrates. In addition, the substrate bonding system 1 may further include a polishing device (not shown) for polishing the surface of any one of the bonded wafer substrates.

The substrate processing apparatus 10 is observed with reference to an embodiment of the substrate processing apparatus according to the present invention shown in FIG. 3 .

The substrate processing apparatus 10 may include a process chamber 100, a substrate support 110, an ion blocker 200, a gas supply member 300, a plasma activation member, and the like.

The substrate support 110 may support the wafer W within the process chamber 100 . The substrate support 110 may include a substrate stage on which the wafer is placed.

In an exemplary embodiment, the substrate processing apparatus 10 may irradiate plasma to the surface of a substrate such as a semiconductor wafer W disposed in an inductively coupled plasma (ICP) process chamber 100 to form hydroxyl groups on the surface of the substrate. (-OH) device. Here, the plasma generated by the substrate processing apparatus 10 is not limited to inductively coupled plasma, and may be capacitively coupled plasma or microwave plasma, for example.

Process chamber 100 may provide an enclosed processing space 120 for performing plasma processing processes on wafer W. Process chamber 100 may be a cylindrical vacuum chamber. The process chamber 100 may include metals such as aluminum, stainless steel, and the like. The process chamber 100 may include a cover 102 covering an upper portion of the process chamber 100 . The cover 102 can seal the upper part of the process chamber 100 .

A gate (not shown) for the entry and exit of the wafer W may be provided on the side wall of the process chamber 100 . The wafer W can be loaded and unloaded on the substrate stage of the substrate support unit 110 through the gate.

The exhaust port 104 may be provided at the lower part of the process chamber 100, and the exhaust port 104 is connected to the exhaust part 106 through an exhaust pipe. The exhaust part 106 may include a vacuum pump such as a turbomolecular pump to adjust the processing space inside the process chamber 100 to a pressure with a desired degree of vacuum. In addition, process by-products and residual process gases generated in the process chamber 100 can be discharged through the exhaust port 104 .

The plasma activation member may include an upper plasma activation part 130 that activates the upper plasma space 150 and a lower plasma activation part 140 that activates the lower plasma space 160 .

The upper plasma activation part 130 may include an upper electrode 131, a source RF power supply 133, a source RF matcher 135, and the like.

The upper electrode 131 may be disposed above and outside the process chamber 100 in a manner opposite to the lower electrode. As an example, the upper electrode 131 may be disposed on the cover 102 . Differently from this, the upper electrode 131 may also be formed on the upper part of the process chamber 100 .

The upper electrode 131 may include a radio frequency (RF) antenna. The aforementioned antenna may have a planar coil shape. The cover 102 may include a disk-shaped dielectric window. The aforementioned dielectric window may include a dielectric substance. For example, the aforementioned dielectric window may include aluminum oxide (Al ₂ O ₃ ). The dielectric window may have a function of transmitting power from the antenna to the inside of the process chamber 100 .

For example, the upper electrode 131 may include a spiral-shaped or concentric-circle-shaped coil. The aforementioned coil can generate inductively coupled plasma in the plasma space of the process chamber 100 . Here, the number, arrangement, etc. of the aforementioned coils can be appropriately changed as necessary.

The upper plasma activation part 130 may apply plasma source power to the upper electrode 131 . For example, the upper plasma activation part 130 may include a source RF power supply 133 and a source RF matcher 135 as plasma source elements. Source RF power supply 133 can generate radio frequency (RF) signals. The source RF matcher 135 can control the plasma to be generated using the antenna coil of the upper electrode 131 by matching the impedance of the RF signal generated from the source RF power supply 133 .

The lower plasma activation part 140 may include a lower electrode 141, a bias RF power supply 143, a bias RF matcher 145, and the like.

The lower electrode 141 may be disposed inside the substrate support part 110 .

The lower plasma activation part 140 may apply bias source power to the lower electrode 141 . For example, the lower plasma activation part 140 may include a bias RF power supply 143 and a bias RF matcher 145 as bias elements. The lower electrode 141 can pull plasma atoms or ions generated in the process chamber 100 . Bias RF power supply 143 can generate radio frequency (RF) signals. The bias RF matcher 145 can adjust the bias voltage and bias current of the downward electrode 141 to match the impedance of the bias RF. The bias RF power supply 143 and the source RF power supply 133 may be synchronized or desynchronized with each other via a tuner of a control component (not shown).

The aforementioned control component can control the aforementioned plasma activation component to selectively activate the upper plasma space 150 and the lower plasma space 160 .

The aforementioned control component can be connected to the upper plasma activation part 130 and the lower plasma activation part 140 to control their operations. The aforementioned control components may include microcomputers and various interfaces, and control the operation of the plasma processing device 10 according to programs and method information stored in external memory or internal memory.

In particular, the aforementioned control component can activate the lower plasma space and supply the process gas to generate hydroxyl (-OH) in a part of the substrate surface, and at the same time adjust the roughness of the substrate surface through ions, activate the upper plasma space and block the ions through ions. While filtering ions, the free radicals are diffused toward the substrate surface to control the generation of hydroxyl groups (-OH) over the entire area of the substrate surface.

The operation of such a control component will be observed through specific embodiments later.

The ion blocker 200 may be disposed in the upper space inside the process chamber 100 to divide the upper plasma space 150 . As an example, the upper plasma space 150 may be formed above the ion blocker 200 and the lower plasma space 160 may be formed above the substrate.

FIGS. 4 and 5 illustrate an embodiment of the ion blocker of the substrate processing apparatus according to the present invention. The ion blocker 200 will be described with reference to the aforementioned FIGS. 4 and 5 .

The ion blocker 200 may include an upper plate 210 and a lower plate 250 and include a diffusion space 230 disposed between the upper plate 210 and the lower plate 250 .

A plurality of gas inflow holes 211 may be provided in the upper plate 210 as through holes for allowing the gas in the upper plasma space to flow into the diffusion space 230 , and in the lower plate 250 as through holes for allowing the gas in the diffusion space 230 to flow into the lower plasma space. A plurality of gas discharge holes 251 are arranged as diffused through holes.

The plurality of gas inflow holes 211 arranged in the upper plate 210 and the plurality of gas discharge holes 251 arranged in the lower plate 250 may be configured so that virtual extension lines are staggered from each other. That is, the virtual elongated hole of the gas inlet hole 211 of the upper plate 210 meets and is blocked by the upper surface of the lower plate 250 . In addition, the virtual elongated hole of the gas discharge hole 251 of the lower plate 250 is in contact with the lower surface of the upper plate 210 . The surfaces meet and are blocked.

Such a structure of the ion blocker 200 can filter ions while allowing free radicals to diffuse to the substrate surface. The operation of the ion blocker 200 will be described in more detail below through embodiments.

The number, arrangement, etc. of the gas inflow holes 211 of the upper plate 210 and the gas discharge holes 251 of the lower plate 250 can be changed in various ways according to needs.

The substrate processing apparatus 10 may include a gas supply member 300 for supplying plasma gas to the inside of the process chamber 100 .

The gas supply component 300 can supply process gas (Process Gas), and can also supply carrier gas (Carrier Gas) in addition to the process gas. As the process gas, gases such as N ₂ and O ₂ can be selected according to the characteristics of the target substrate for plasma treatment. The carrier gas may include an inert gas such as Ar as a gas that does not react with the process gas and does not react with the substrate.

The gas supply component 300 may include a flow rate controller (FRC) to adjust the supply amounts of process gas and carrier gas. As an example, the flow controller (FRC) may include a mass flow controller (Mass Flow Controller; MFC).

In addition, the present invention proposes a substrate processing method for ensuring uniformity (uniformity) by uniformly generating hydroxyl groups (-OH) over the entire area of the substrate surface by the substrate processing apparatus according to the present invention as observed above.

FIG. 6 shows a flow chart of an embodiment of a substrate processing method according to the present invention.

The plasma space can be activated and process gas supplied to create an environment that generates hydroxyl groups (-OH) on the substrate surface. Preferably, while the upper plasma space remains in an inactive state, only the lower plasma space is activated to supply process gas (S100).

Through the supply of process gas, free radicals (Radical) and ions (Ion) can be generated in the lower plasma space. The free radicals generate hydroxyl groups (-OH) in a part of the substrate surface and the roughness of the substrate surface is adjusted by the ions, thereby An environment for hydroxyl formation can be created (S200).

Then, the upper plasma space can be activated while supplying the process gas (S300) and filtering the ions through the ion blocker while providing only free radicals to the substrate surface (S400).

Through the ion blocker, only free radicals reach the substrate surface but ions do not reach the substrate surface, so that hydroxyl groups (-OH) can be generated in the remaining areas on the substrate surface where hydroxyl groups are not formed.

In this way, by uniformly forming hydroxyl groups (-OH) over the entire area of the substrate surface, the uniformity of the overall hydroxyl groups (-OH) on the substrate surface can be adjusted while ensuring a sufficient amount of hydroxyl groups (-OH) (S500).

The substrate processing method according to the present invention is viewed in more detail through more specific examples.

First, regarding the process of creating an environment for the formation of hydroxyl groups on the substrate surface, FIG. 7 shows a flow chart of an embodiment of the environment creation process for the formation of hydroxyl groups according to the substrate processing method of the present invention. FIG. 8 and FIG. 9 show An example of the environment creation process for hydroxyl formation in the substrate treatment method is given.

The control component may control the lower plasma activation part 140 to supply power, and supply process gas (Process Gas) PG through the gas supply component 300 (S110). The lower plasma space 160 may be activated by the lower plasma activation part 140 (S120). Then, radicals and ions may be generated in the lower plasma space 160 by the supplied process gas PG.

Referring to FIG. 8 , the control component may control the upper plasma activation part 130 to cut off the power supply and keep the upper plasma space 150 in an inactive state, while the lower plasma activation part 140 supplies power to activate the lower plasma space 160 .

The process gas PG supplied through the gas supply member 300 diffuses toward the substrate surface and reaches the lower plasma space 160 , where radicals R and ions I can be generated in the lower plasma space 160 ( S130 ).

Furthermore, the control unit may additionally supply the carrier gas together with the process gas through the gas supply unit 300, thereby supplying the process gas PG toward the substrate surface more smoothly. Moreover, the diffusion rate of the process gas can also be controlled through the carrier gas.

The generated radicals R and ions I may be used to perform surface treatment on the substrate W (S210). For example, hydroxyl groups (-OH) can be generated on the surface of the substrate W by the generated free radicals R as shown in Figure 9. Since the ions I also reach the surface of the substrate W, part of the hydroxyl groups (-OH) generated by the ions I can be destroyed. Therefore, the hydroxyl group (-OH) can be retained only in the local partial area A1 of the surface of the substrate W.

In addition, the ions I reach the partial area A2 of the surface of the substrate W, so that the roughness of the surface of the substrate W can be adjusted. Here, the partial area A2 in which the roughness of the surface of the substrate W is adjusted can provide an environment in which hydroxyl groups (-OH) can be formed more stably later.

In this way, the process gas PG is supplied while activating the lower plasma space 160, thereby forming hydroxyl groups (-OH) in a part of the surface of the substrate W and adjusting the roughness of the surface of the substrate W (S220), thereby creating a smoother and more stable process. The environment formed by the hydroxyl group (-OH).

Next, regarding the process of uniformly forming hydroxyl groups on the entire area of the substrate surface, FIG. 10 shows a flow chart of an embodiment of the process of uniformly forming hydroxyl groups on the entire substrate surface according to the substrate processing method of the present invention. FIG. 11 to FIG. 15 shows an example of a process for uniformly forming hydroxyl groups on the entire substrate surface according to the substrate processing method of the present invention.

The control component may control the plasma activation part 130 to supply power, and supply process gas (Process Gas) through the gas supply component 300 (S310). The upper plasma space 150 may be activated by the upper plasma activation part 130 (S320). Then, free radicals and ions may be generated in the upper plasma space 150 by the supplied process gas.

Referring to FIG. 11 , the control member may supply power and activate the upper plasma space 150 by controlling the upper plasma activation part 130 . In addition, the control component may control the gas supply component 300 to supply the process gas and generate radicals R and ions I in the upper plasma space (S330).

The radicals R and ions I generated in the upper plasma space 150 may flow into the ion blocker 200 and filter the ions I through the ion blocker 200 (S410) and allow only the radicals R to diffuse toward the substrate W surface (S420).

Referring to FIGS. 12 and 13 , the radicals R and ions I generated in the upper plasma space 150 may flow into the diffusion space 230 through the gas inflow hole 211 disposed in the upper plate 210 of the ion blocker 200 . At this time, the ions I move straight forward due to the movement direction characteristics caused by the polarity. Therefore, among the ions I in the upper plasma space 150, the movement direction of the ions I different from that of the gas inflow hole 211 can be filtered through the upper plate 210 at once.

Among the ions I in the upper plasma space 150 , the ions I whose movement direction is the same as that of the gas inflow hole 211 of the ion blocker 200 can flow into the diffusion space 230 together with the radicals R.

The radicals R present in the diffusion space 230 of the ion blocker 200 may diffuse toward the surface of the substrate W through the gas discharge holes 251 disposed in the lower plate 250 . At this time, the ions I flowing into the diffusion space 230 of the ion blocker 200 move in the same direction as the gas inflow hole 211 of the upper plate 210 and are staggered from the gas discharge hole 251 arranged in the lower plate 250 . Therefore, the ions I flowing into the diffusion space 230 can be secondary filtered through the gas discharge holes 251 arranged in the lower plate 250 .

Furthermore, the control unit additionally supplies the carrier gas together with the process gas through the gas supply unit 300, thereby supplying the radicals R toward the substrate surface more smoothly, and at the same time adjusting the moving speed of the ions I to be faster, thereby preventing various The moving direction of ion I changes due to factors.

Furthermore, the control member may also activate the lower plasma space 160 through the lower plasma activation part 140 .

The radicals R diffuse toward the surface of the substrate W, so that the radicals R can reach the substrate W to form hydroxyl groups (S510).

Referring to FIGS. 14 and 15 , the ions I can be filtered through the ion blocker 200 and only the radicals R can be diffused toward the surface of the substrate W to generate hydroxyl groups (-OH) on the surface of the substrate W. A part of the region A1 is in a hydroxyl (-OH) state, and the remaining part of the region A2 can generate a hydroxyl group (-OH). Moreover, hydroxyl groups (-OH) can be stably and efficiently generated in the remaining partial area A2 by creating an environment controlled by adjusting the roughness of the surface of the substrate W.

Through such a process, a sufficient amount of hydroxyl groups (-OH) is formed while being uniformly distributed over the entire area of the surface of the substrate W, so that the hydroxyl group uniformity can be adjusted (S520).

Through the present invention observed above, a sufficient amount of hydroxyl groups (-OH) can be formed uniformly on the entire substrate surface.

In particular, it solves the following problem: During the plasma treatment process on the substrate surface, the generation and destruction of hydroxyl groups (-OH) repeatedly occur on the substrate due to the influence of ions (Ion), thus ultimately completing the plasma treatment. The hydroxyl groups (-OH) in the surface of the substrate cannot be uniformly distributed and a sufficient amount of hydroxyl groups (-OH) cannot be generated to enable covalent bonds to be formed uniformly overall when the substrates are joined.

Furthermore, the roughness of the substrate surface is adjusted through a pre-treatment process to create an environment for stable generation of hydroxyl groups (-OH), and then the ions are filtered through an ion blocker to allow only radicals (Radical) to diffuse toward the substrate surface, thereby adjusting Hydroxyl uniformity such that hydroxyl groups (-OH) are evenly distributed in empty areas where hydroxyl groups (-OH) are not formed on the substrate surface.

The above description merely illustrates the technical concept of the present invention. Those with ordinary knowledge in the technical field to which the present invention belongs can make various modifications and changes without departing from the essential characteristics of the present invention. Therefore, the embodiments described in the present invention are used to illustrate the technical concept of the present invention and are not intended to limit it. The technical concept of the present invention is not limited by such embodiments. The protection scope of the present invention should be interpreted based on the appended patent application scope, and all technical ideas within the equivalent scope thereof should be interpreted as being included in the right scope of the present invention.

1:Substrate bonding system 10:Substrate processing device 20: Clean room 22:Robot 30:Wafer cassette stage 32:Support plate 50:Cleaning device 60: Alignment device 70:Substrate bonding device 100: Process chamber 102: Cover 104:Exhaust port 106:Exhaust part 110:Substrate support part 120: processing space 130: Upper plasma activation part 131: Upper electrode 133: Source RF power supply 135: Source RF matcher 140:Lower plasma activation part 141: Lower electrode 143: Bias RF power supply 145: Bias RF matcher 150: Upper plasma space 160: Lower plasma space 200:Ion blocker 210:On the board 211:Gas inflow hole 230: Diffusion space 250: Lower board 251:Gas discharge hole 300:Gas supply component A1: Some areas A2: Some areas C:Vehicle I:ion PG: process gas R: free radical S100, S110, S120, S130: steps S200, S210, S220: steps S300, S310, S320, S330: steps S400, S410, S420: steps S500, S510, S520: steps W:wafer

Figure 1 shows the concept of hybrid bonding to which the present invention is applied.

Figure 2 illustrates an embodiment of a substrate bonding system according to the present invention.

FIG. 3 shows an embodiment of a substrate processing apparatus according to the present invention.

4 and 5 illustrate an embodiment of the ion blocker of the substrate processing apparatus according to the present invention.

FIG. 6 shows a flow chart of an embodiment of a substrate processing method according to the present invention.

FIG. 7 shows a flow chart of an embodiment of an environment creation process for hydroxyl formation according to the substrate processing method of the present invention.

8 and 9 illustrate an example of an environment creation process for hydroxyl group formation in the substrate processing method.

FIG. 10 shows a flow chart of an embodiment of a process for uniformly forming hydroxyl groups on the entire surface of a substrate according to the substrate processing method of the present invention.

11 to 15 illustrate an example of a process for uniformly forming hydroxyl groups on the entire surface of a substrate according to the substrate processing method of the present invention.

S110: Steps

S120: Steps

S130: Steps

S210: Steps

S220: Steps

Claims (20)

A substrate processing method including: The environment creation step activates the plasma space and supplies process gas to create an environment where hydroxyl groups are generated on the substrate surface; A selective radical supply step that activates the upper plasma space and supplies the process gas, filters ions through an ion blocker and diffuses free radicals; and In the hydroxyl group uniformity adjusting step, hydroxyl groups are uniformly generated over the entire surface of the substrate to adjust the hydroxyl group uniformity. The substrate processing method as described in claim 1, wherein, The environment creation step activates the lower plasma space but not the upper plasma space. The substrate processing method as described in claim 1, wherein, The environment creation steps include: In the lower plasma space activation step, the lower plasma space is activated through the lower plasma activation part and the process gas is supplied through the gas supply member; a free radical and ion generation step to generate the free radical and the ion in the lower plasma space; and In the substrate surface roughness adjustment step, the hydroxyl groups are generated in a part of the substrate surface and the roughness of the substrate surface is adjusted by the ions. The substrate processing method as described in claim 3, wherein, The lower plasma space activation step does not activate the upper plasma space through the upper plasma activation part. The substrate processing method as described in claim 3, wherein, The substrate surface roughness adjusting step uses the ions to adjust the roughness of the substrate surface to create an environment for the formation of the hydroxyl groups on the substrate surface. The substrate processing method as described in claim 3, wherein, The environment creation steps also include: In a diffusion support step, a carrier gas is supplied to support the diffusion of the generated free radicals and ions to the substrate surface. The substrate processing method as described in claim 1, wherein, The selective free radical providing step includes: The upper plasma space activation step includes activating the upper plasma space through the upper plasma activation part and supplying the process gas through the gas supply member; a free radical and ion generation step to generate the free radical and the ion in the upper plasma space; and In the free radical diffusion step, the ions are filtered through the ion blocker and the free radicals are diffused. The substrate processing method according to claim 7, wherein, The free radical diffusion step includes: The free radical and ion influx step causes the free radical and the ion in the upper plasma space to flow into the diffusion space of the ion blocker; and In the ion filtering step, the ions are filtered through the ion blocker and the free radicals are diffused toward the substrate surface. The substrate processing method according to claim 8, wherein, In the ion filtering step, the ion blocker filters the ions by utilizing the movement direction characteristics brought by the polarity of the ions. The substrate processing method according to claim 7, wherein, The selective free radical providing step also includes: A step of activating the lower plasma space through the lower plasma activation part together with the activation of the upper plasma space. The substrate processing method according to claim 7, wherein, The selective free radical providing step also includes: In a diffusion support step, a carrier gas is supplied to support the generated free radicals to diffuse toward the substrate surface. The substrate processing method as described in claim 1, wherein, In the hydroxyl group uniformity adjusting step, the hydroxyl group is generated in the remaining area except for a part of the substrate surface where the hydroxyl group is generated in the environment creation step, and the hydroxyl group is uniformly generated in the entire area of the substrate surface. A substrate processing device including: A process chamber that provides a processing space for plasma treatment to generate hydroxyl groups on the surface of the substrate; a plasma activation component that selectively activates the upper plasma space and the lower plasma space in the processing space; a substrate support member arranged in the processing space to support the substrate; a gas supply component that supplies more than one gas including process gas to the processing space; An ion blocker is disposed above the processing space of the process chamber to divide the upper plasma space, and filters ions and diffuses free radicals; and The control component controls the selective activation of the upper plasma space and the lower plasma space through the plasma activation component to create an environment in which hydroxyl groups are generated on the substrate surface, and controls the uniformity of the hydroxyl groups generated on the substrate surface. The substrate processing apparatus according to claim 13, wherein, This ion blocker includes: The upper plate is arranged with a gas inflow hole for the gas flowing into the upper plasma space; a diffusion space formed below the upper plate; and The lower plate is arranged with gas discharge holes for diffusing the gas in the diffusion space to the processing space, The gas inflow hole of the upper plate and the gas discharge hole of the lower plate are configured as virtual elongated holes and are staggered from each other. The substrate processing apparatus according to claim 14, wherein, The ion blocker uses the lower plate to filter the ions in the diffusion space through the movement direction characteristics brought by the polarity of the ions. The substrate processing apparatus according to claim 13, wherein, The gas supply member supplies carrier gas to the processing space. The substrate processing apparatus according to claim 13, wherein, The plasma activation component includes: The upper plasma activation part activates the upper plasma space; and The lower plasma activation part activates the lower plasma space. The substrate processing apparatus according to claim 13, wherein, The control component activates the lower plasma space and supplies the process gas to generate the hydroxyl groups in a part of the substrate surface and adjust the roughness of the substrate surface through the ions, then activates the upper plasma space and passes the ion resistance through the ion resistance. While filtering the ions, the breaker diffuses the free radicals toward the substrate surface to control the generation of the hydroxyl groups in the entire area of the substrate surface. A substrate bonding system including: The substrate processing device according to claim 13, wherein the hydroxyl group is generated on the surface of the substrate through plasma treatment; A cleaning device is used to clean the surface of the substrate after plasma treatment; a substrate bonding device for bonding the substrate with the hydroxyl group formed on the surface; and The alignment device transfers the substrate to the substrate processing device, the cleaning device and the substrate bonding device. A substrate processing method including: In the lower plasma space activation step, while the upper plasma space is not activated through the upper plasma activation part and the lower plasma space is activated through the lower plasma activation part, the process gas is supplied through the gas supply member; A step of generating free radicals and ions in the lower space to generate free radicals and ions in the lower plasma space; The substrate surface roughness adjustment step is to generate hydroxyl groups in a part of the substrate surface and at the same time adjust the roughness of the substrate surface through the ions to create an environment for generating the hydroxyl groups; An upper plasma space activation step includes activating the upper plasma space through the upper plasma activation part and supplying the process gas through the gas supply member; A step of generating free radicals and ions in the upper space to generate the free radicals and the ions in the upper plasma space; a diffusion step to cause the generated free radicals and ions to diffuse into the diffusion space of the ion blocker; an ion filtering step, filtering the ions through the ion blocker and diffusing the free radicals toward the substrate surface; and In the step of adjusting the uniformity of hydroxyl groups, the hydroxyl groups are generated in the remaining area of the substrate surface and the hydroxyl groups are uniformly generated in the entire area of the substrate surface to adjust the uniformity.