CN118190238B - Gas pressure sensor chip based on semiconductor film and preparation method thereof - Google Patents

Gas pressure sensor chip based on semiconductor film and preparation method thereof Download PDF

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CN118190238B
CN118190238B CN202410620893.3A CN202410620893A CN118190238B CN 118190238 B CN118190238 B CN 118190238B CN 202410620893 A CN202410620893 A CN 202410620893A CN 118190238 B CN118190238 B CN 118190238B
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electrode
silicon wafer
film layer
substrate silicon
thin film
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CN118190238A (en
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李铁夫
刘其春
王宇清
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Beijing Institute Of Quantum Information Science
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Beijing Institute Of Quantum Information Science
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L21/00—Vacuum gauges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • B81C3/001—Bonding of two components
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

The application provides a gas pressure sensor chip based on a semiconductor film and a preparation method thereof, and relates to the technical field of semiconductor device preparation. A semiconductor thin film based gas pressure sensor chip comprising: a substrate silicon wafer; the semiconductor thin film layer is deposited on the upper surface and the lower surface of the substrate silicon wafer, wherein the semiconductor thin film layer deposited on the upper surface of the substrate silicon wafer comprises a suspended window; a metal film layer deposited on the upper surface of the suspended window; a lower substrate silicon wafer; the first electrode and the second electrode are respectively deposited at two opposite ends of the upper surface of the lower substrate silicon wafer; the connecting module is deposited on the edge of the upper surface of the lower substrate silicon wafer, and is not connected with the first electrode and the second electrode, and the substrate silicon wafer is connected with the lower substrate silicon wafer through the connecting module after being inverted. The gas pressure sensor chip prepared according to the embodiment of the application has the advantages of simple structure, few processing steps and easy integration processing with other semiconductor devices.

Description

Gas pressure sensor chip based on semiconductor film and preparation method thereof
Technical Field
The application relates to the technical field of semiconductor device preparation, in particular to a gas pressure sensor chip based on a semiconductor film and a preparation method thereof.
Background
In recent years, vacuum gauges based on MEMS technology have been rapidly developed. However, the current film MEMS vacuum gauges are of a two-chamber structure, and the pressure-sensitive film needs to be deformed by the pressure difference between the cavity to be measured and the reference vacuum cavity, so as to obtain the pressure to be measured. Moreover, current thin film MEMS vacuum gauges require that the film have the ability to withstand large pressure differentials on both sides, which are complex to manufacture and assemble.
Disclosure of Invention
According to an aspect of the present application, there is provided a semiconductor thin film-based gas pressure sensor chip including: a substrate silicon wafer; the semiconductor thin film layer is deposited on the upper surface and the lower surface of the substrate silicon wafer, wherein the semiconductor thin film layer deposited on the upper surface of the substrate silicon wafer comprises a suspended window, and the part of the substrate silicon wafer corresponding to the suspended window and the part of the semiconductor thin film layer deposited on the lower surface of the substrate silicon wafer are etched and removed; a metal film layer deposited on the upper surface of the suspended window; a lower substrate silicon wafer; the first electrode and the second electrode are respectively deposited at two opposite ends of the upper surface of the lower substrate silicon wafer; and the connecting module is deposited on the edge of the upper surface of the lower substrate silicon wafer, is not connected with the first electrode and the second electrode, and is connected with the lower substrate silicon wafer through the connecting module after the substrate silicon wafer is inverted.
According to some embodiments, the material of the semiconductor thin film layer is silicon nitride or silicon carbide.
According to some embodiments, the suspended window has an area smaller than the cross-sectional area of the semiconductor thin film layer deposited on the lower surface of the substrate silicon wafer and the etched-out portion of the substrate silicon wafer.
According to some embodiments, the material of the metal film layer comprises one or more of aluminum, niobium, titanium metals having an area smaller than the area of the suspended window.
According to some embodiments, the material of the first and second electrodes comprises one or more of aluminum, niobium, titanium metal, and the total area of the intermediate portions of the first and second electrodes is less than the area of the metal thin film layer.
According to some embodiments, the material of the connection module is epoxy glue or indium metal.
According to some embodiments, after the substrate silicon wafer is flipped, the metal film layer is opposite to the first electrode and the second electrode, and a distance between the metal film layer and the first electrode and the second electrode is within a preset interval.
According to an aspect of the present application, there is provided a method for manufacturing a semiconductor thin film-based gas pressure sensor chip, including: depositing a semiconductor film layer on the upper surface and the lower surface of a substrate silicon wafer; etching the semiconductor film layer deposited on the lower surface of the substrate silicon wafer according to the preset window area to generate an etching window of the semiconductor film layer; etching the substrate silicon wafer through the etching window of the semiconductor film layer to obtain a suspended window of the semiconductor film layer deposited on the upper surface of the substrate silicon wafer; depositing a metal film layer on the upper surface of the suspended window; respectively depositing a first electrode, a second electrode and a connecting module on the upper surface of a lower substrate silicon wafer; and the substrate silicon wafer deposited with the semiconductor film layer and the metal film layer is inverted and connected with the substrate silicon wafer and the lower substrate silicon wafer deposited with the first electrode, the second electrode and the connecting module through the connecting module.
According to some embodiments, a semiconductor thin film layer is deposited on the upper surface and the lower surface of the substrate silicon wafer by a low pressure chemical vapor deposition process, the semiconductor thin film layer having in-plane stress higher than a preset threshold.
According to some embodiments, connecting a substrate silicon wafer and a lower substrate silicon wafer deposited with a first electrode, a second electrode, and a connection module by a connection module comprises: the thickness of the connecting module is adjusted to control the distance between the substrate silicon wafer and the lower substrate silicon wafer, so that the distance between the metal film layer and the first electrode and the second electrode is within a preset interval.
According to an aspect of the present application, there is provided a vacuum gauge including the gas pressure sensor chip described above.
According to the embodiment of the application, the gas pressure sensor chip for the vacuum gauge can be prepared through the micro-nano processing technology, the semiconductor film has higher in-plane stress, and the vacuum gauge applying the chip has a simple structure and does not need to refer to a vacuum cavity, thereby being beneficial to miniaturization and integration of the vacuum gauge.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application as claimed.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the description below are only some embodiments of the present application.
Fig. 1 shows a schematic structure of a semiconductor thin film-based gas pressure sensor chip according to an exemplary embodiment of the present application.
Fig. 2 is a schematic diagram showing a process of preparing a substrate silicon wafer on which a semiconductor thin film and a metal thin film are deposited according to an exemplary embodiment of the present application.
Fig. 3 shows a front side view of a substrate silicon wafer on which a semiconductor thin film and a metal thin film are deposited according to an exemplary embodiment of the present application.
Fig. 4 is a schematic view showing a process of preparing a lower substrate silicon wafer for depositing metal electrodes and a connection module according to an exemplary embodiment of the present application.
Fig. 5 shows a front view of a lower substrate silicon wafer with deposited metal electrodes and connection modules according to an example embodiment of the application.
Fig. 6 shows a schematic diagram of a manufacturing process of a gas pressure sensor chip according to an exemplary embodiment of the application.
Reference numerals: 1. a substrate silicon wafer; 2. a semiconductor thin film layer; 3. a metal thin film layer; 4. a lower substrate silicon wafer; 5. a first electrode; 6. a second electrode; 7. and connecting the modules.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. However, the exemplary embodiments can be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar parts, and thus a repetitive description thereof will be omitted.
The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the application. One skilled in the relevant art will recognize, however, that the application can be practiced without one or more of the specific details, or with other methods, components, materials, devices, operations, etc. In these instances, well-known structures, methods, devices, implementations, materials, or operations are not shown or described in detail.
The flow diagrams depicted in the figures are exemplary only, and do not necessarily include all of the elements and operations/steps, nor must they be performed in the order described. For example, some operations/steps may be decomposed, and some operations/steps may be combined or partially combined, so that the order of actual execution may be changed according to actual situations.
The terms first, second and the like in the description and in the claims and in the above-described figures are used for distinguishing between different objects and not necessarily for describing a sequential or chronological order. Furthermore, the terms "comprise" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those listed steps or elements but may include other steps or elements not listed or inherent to such process, method, article, or apparatus.
The application provides a semiconductor film-based gas pressure sensor chip and a preparation method thereof, which can prepare the gas pressure sensor chip and a corresponding vacuum gauge through the semiconductor film with in-plane stress, and realize the vacuum measurement through a single vacuum chamber.
A gas pressure sensor chip based on a semiconductor thin film and a method of manufacturing the same according to an embodiment of the present application will be described in detail below with reference to the accompanying drawings.
Fig. 1 shows a schematic structure of a semiconductor thin film-based gas pressure sensor chip according to an exemplary embodiment of the present application.
As shown in fig. 1, the gas pressure sensor chip includes a substrate silicon wafer 1, a semiconductor thin film layer 2, a metal thin film layer 3, a lower substrate silicon wafer 4, a first electrode 5, a second electrode 6, and a connection module 7.
The semiconductor film layer 2 is deposited on the upper surface and the lower surface of the substrate silicon wafer 1. Wherein, the semiconductor film layer 2 deposited on the upper surface of the substrate silicon wafer 1 comprises a suspended window.
According to some embodiments, the portion of the semiconductor thin film layer 2 corresponding to the suspended window of the substrate silicon wafer 1 and the portion of the semiconductor thin film layer 2 corresponding to the lower surface of the substrate silicon wafer 1 have been etched away.
The metal film layer 3 is deposited on the upper surface of the suspended window of the semiconductor film layer 2.
The first electrode 5 and the second electrode 6 are deposited at two ends of the upper surface of the lower substrate silicon wafer 4, and the first electrode 5 and the second electrode 6 are opposite.
The connection module 7 is deposited on the edge of the upper surface of the lower substrate silicon wafer 4, and the connection module 7 is not connected to both the first electrode 5 and the second electrode 6.
The substrate silicon wafer 1 deposited with the semiconductor film layer 2 and the metal film layer 3 is connected with the lower substrate silicon wafer 4 deposited with the first electrode 5, the second electrode 6 and the connecting module 7 through the connecting module 7 after being inverted.
In the gas pressure sensor chip shown in fig. 1, in-plane stress in the semiconductor thin film layer 2 itself can make the semiconductor thin film layer 2 in a tight state, and the metal thin film layer 3, the first electrode 5 and the second electrode 6 form space capacitances C 35 and C 36, respectively, and a space capacitance C 56 is formed between the first electrode 5 and the second electrode 6. The ac response characteristic between the first electrode 5 and the second electrode 6 is mainly determined by the space capacitance C 35, the space capacitance C 36, the space capacitance C 56, and the vibration amplitude a of the metal thin film layer 3 driven by the vibration of the semiconductor thin film layer 2 itself.
According to some embodiments, a vacuum gauge may be prepared from the gas pressure sensor chip shown in fig. 1 for obtaining a vacuum level of a vacuum environment to be measured.
For example, a vacuum gauge prepared according to the gas pressure sensor chip shown in fig. 1 is placed in a vacuum environment to be measured, and an alternating current driving signal having a frequency f and an amplitude U 1 is applied to the first electrode 5, where f is the eigen-vibration mode frequency of the semiconductor thin film layer 2. The alternating current driving signal will drive the semiconductor thin film layer 2 and the metal thin film layer 3 to vibrate.
The ac signal with frequency f at the second electrode 6 is measured and the resulting signal amplitude is U 2.
In the case where the semiconductor thin film layer 2 is in different vacuum environments, the vibration amplitude of the semiconductor thin film layer 2 and the metal thin film layer 3 varies due to the gas damping of the different vacuum environments. Wherein, the higher the vacuum degree of the environment, the smaller the gas damping, and the larger the vibration amplitude A of the semiconductor thin film layer 2 and the metal thin film layer 3.
The variation of the vibration amplitude a of the metal thin film layer 3 will affect the signal transmission characteristics from the first electrode 5 to the second electrode 6. Therefore, the vacuum degree of the vacuum environment to be measured can be obtained by calculating the ratio U 2/U1 of the signal amplitude U 2 measured by the second electrode 6 to the driving signal amplitude U 1 applied to the first electrode 5.
Fig. 2 is a schematic diagram showing a process of preparing a substrate silicon wafer on which a semiconductor thin film and a metal thin film are deposited according to an exemplary embodiment of the present application.
As shown in fig. 2, the preparation method of the substrate silicon wafer for depositing the semiconductor film and the metal film comprises the following steps:
Step S100, selecting a substrate silicon wafer 1.
According to some embodiments, the thickness of the substrate silicon wafer 1 may be selected to be 500 μm.
In step S110, the semiconductor thin film layer 2 is deposited on the upper and lower surfaces of the substrate silicon wafer 1.
According to some embodiments, the material of the semiconductor thin film layer 2 is silicon nitride or silicon carbide, and may be deposited on the upper surface and the lower surface of the substrate silicon wafer 1 by a Low Pressure Chemical Vapor Deposition (LPCVD) process.
According to some embodiments, the deposited thickness of the semiconductor thin film layer 2 may be 1 μm, which has an in-plane stress above a preset threshold. The preset threshold value can be adjusted according to actual requirements, for example, 500MPa.
Step S120, etching the semiconductor thin film layer 2 deposited on the lower surface of the substrate silicon wafer 1 to generate an etching window of the semiconductor thin film layer 2.
According to some embodiments, a dry etching process (e.g., reactive ion etching) may be used to etch the semiconductor thin film layer 2 deposited on the lower surface of the substrate silicon wafer 1 according to a predetermined window area, so as to remove the corresponding portion of the semiconductor thin film layer 2 and form an etching window of the semiconductor thin film layer 2.
In step S130, the substrate silicon wafer 1 is etched through the etching window of the semiconductor thin film layer 2 to obtain a suspended window of the semiconductor thin film layer 2 deposited on the upper surface of the substrate silicon wafer 1.
According to some embodiments, the exposed substrate silicon wafer 1 may be etched through the etching window of the semiconductor thin film layer 2 using a wet etching process (e.g., KOH solution) or a dry etching process (e.g., reactive ion etching) to remove a portion of the substrate silicon wafer 1 and form a suspended window of the semiconductor thin film layer 2 deposited on the upper surface of the substrate silicon wafer 1.
According to some embodiments, the area of the suspended window of the semiconductor thin film layer 2 is smaller than the area of the cross section of the semiconductor thin film layer 2 deposited on the lower surface of the substrate silicon wafer 1 and the portion of the substrate silicon wafer 1 that has been etched away (i.e., the etching window of the semiconductor thin film layer 2).
According to some embodiments, the area of the suspended window of the semiconductor thin film layer 2 may be 2mm x 2mm.
In step S140, the metal thin film layer 3 is deposited on the upper surface of the suspended window of the semiconductor thin film layer 2.
According to some embodiments, the material of the metal thin film layer 3 includes one or more of aluminum, niobium, and titanium, and may be deposited on the upper surface of the suspended window of the semiconductor thin film layer 2 through an evaporation process or a sputtering process.
According to some embodiments, the deposition thickness of the metal thin film layer 3 may be 50nm, and its area is smaller than the area of the suspended window of the semiconductor thin film layer 2.
After the preparation of the substrate silicon wafer 1 with the deposited semiconductor thin film layer 2 and the metal thin film layer 3 according to the embodiment of the application is completed, a front view thereof is shown in fig. 3.
Fig. 4 is a schematic view showing a process of preparing a lower substrate silicon wafer for depositing metal electrodes and a connection module according to an exemplary embodiment of the present application.
As shown in fig. 4, the preparation method of the lower substrate silicon wafer for depositing the metal electrode and the connection module comprises the following steps:
Step S200, selecting the lower substrate silicon wafer 4.
According to some embodiments, the thickness of the lower base silicon wafer 4 may be selected to be 500 μm.
In step S210, the first electrode 5 and the second electrode 6 are respectively deposited on the upper surface of the lower substrate silicon wafer 4.
According to some embodiments, the materials of the first electrode 5 and the second electrode 6 include one or more of aluminum, niobium, and titanium metals, which may be deposited on both ends of the upper surface of the lower substrate silicon wafer 4 through an evaporation process or a sputtering process, and the first electrode 5 and the second electrode 6 are opposite.
According to some embodiments, the deposition thickness of the first electrode 5 and the second electrode 6 may be 200nm.
According to some embodiments, the electrode middle portions of the first electrode 5 and the second electrode 6 have a larger area, so that the first electrode 5 and the second electrode 6 can form a metal plate capacitor with the metal thin film layer 3, respectively. And, the total area of the electrode intermediate portion areas of the first electrode 5 and the second electrode 6 is smaller than the area of the metal thin film layer 3.
In step S220, the connection module 7 is deposited on the upper surface of the lower substrate silicon wafer 4.
According to some embodiments, the material of the connection module 7 may be epoxy glue or indium metal. In the case where the material of the connection module 7 is epoxy resin glue, the connection module 7 may be directly deposited on the edge of the upper surface of the lower substrate silicon wafer 4. In the case where the material of the connection module 7 is metallic indium, the connection module 7 may be deposited on the edge of the upper surface of the lower substrate silicon wafer 4 through an evaporation process or a sputtering process.
According to some embodiments, a plurality of connection modules 7 may be deposited on the upper surface of the lower substrate silicon wafer 4, wherein the deposition thickness of each connection module 7 may be 1 μm, and each connection module 7 is disconnected from the first electrode 5, the second electrode 6.
After the preparation of the lower substrate silicon wafer 4 deposited with the first electrode 5, the second electrode 6 and the connection module 7 according to the embodiment of the present application is completed, a front view thereof is shown in fig. 5.
Fig. 6 shows a schematic diagram of a manufacturing process of a gas pressure sensor chip according to an exemplary embodiment of the application.
As shown in fig. 6, the method for manufacturing the gas pressure sensor chip includes the steps of:
Step S300 of obtaining the substrate silicon wafer 1 deposited with the semiconductor thin film layer 2 and the metal thin film layer 3 prepared in the above-described method of steps S100 to S140, and obtaining the lower substrate silicon wafer 4 deposited with the first electrode 5, the second electrode 6 and the connection module 7 prepared in the above-described method of steps S200 to S220.
In step S310, the substrate silicon wafer 1 is flipped and the substrate silicon wafer 1 and the lower substrate silicon wafer 4 are connected through the connection module 7 to obtain a gas pressure sensor chip.
According to some embodiments, in the case that the material of the connection module 7 is epoxy resin glue, the flipped substrate silicon wafer 1 deposited with the semiconductor thin film layer 2 and the metal thin film layer 3 and the lower substrate silicon wafer 4 deposited with the first electrode 5, the second electrode 6 and the connection module 7 can be adhered and fixed through the connection module 7, and the distance between the substrate silicon wafer 1 and the lower substrate silicon wafer 4 can be controlled by adjusting the thickness of the connection module 7.
According to some embodiments, in the case where the material of the connection module 7 is metallic indium, the substrate silicon wafer 1 on which the semiconductor thin film layer 2 and the metallic thin film layer 3 are deposited may be flip-chip bonded onto the lower substrate silicon wafer 4 on which the first electrode 5, the second electrode 6 and the connection module 7 are deposited by a flip-chip bonding process, and the thickness of the connection module 7 after bonding may be adjusted by controlling the pressure of the flip-chip bonding, thereby controlling the distance between the substrate silicon wafer 1 and the lower substrate silicon wafer 4.
According to some embodiments, the distance between the substrate silicon wafer 1 and the lower substrate silicon wafer 4 can be controlled by adjusting the thickness of the connection module 7 so that the distance between the metal film layer 3 and the first electrode 5 and the second electrode 6 is within a preset interval.
According to some embodiments, the preset interval of the distance between the metal film layer 3 and the first electrode 5 and the second electrode 6 can be set to be (200 nm,500 nm) generally, so as to avoid the failure of the device caused by electrostatic adsorption and achieve more accurate measurement result, and half of the area of the metal film layer 3 is aligned with the first electrode 5 and the other half is aligned with the second electrode 6.
According to some embodiments of the application, the technical scheme of the application can prepare a gas pressure sensor chip through the semiconductor film with prestress, and a vacuum gauge applying the chip has a simple structure and can realize vacuum measurement in a single vacuum chamber.
The foregoing detailed description of the embodiments of the application has been presented only to assist in understanding the method and its core ideas of the application. Meanwhile, based on the idea of the present application, those skilled in the art can make changes or modifications on the specific embodiments and application scope of the present application, which belong to the protection scope of the present application. In view of the foregoing, this description should not be construed as limiting the application.

Claims (11)

1. A semiconductor thin film based gas pressure sensor chip, comprising:
A substrate silicon wafer;
The semiconductor thin film layer is deposited on the upper surface and the lower surface of the substrate silicon wafer, wherein the semiconductor thin film layer deposited on the upper surface of the substrate silicon wafer comprises a suspension window, and the part of the substrate silicon wafer corresponding to the suspension window and the part of the semiconductor thin film layer deposited on the lower surface of the substrate silicon wafer are etched and removed;
a metal film layer deposited on the upper surface of the suspended window;
a lower substrate silicon wafer;
The first electrode and the second electrode are respectively deposited at two opposite ends of the upper surface of the lower substrate silicon wafer; and
The connecting module is deposited on the edge of the upper surface of the lower substrate silicon wafer, the connecting module is not connected with the first electrode and the second electrode, and the substrate silicon wafer is connected with the lower substrate silicon wafer through the connecting module after being inverted;
Applying an alternating current driving signal with frequency f and amplitude U1 to the first electrode, wherein f is the frequency of an intrinsic vibration mode of the semiconductor thin film layer, and the alternating current driving signal drives the semiconductor thin film layer and the metal thin film layer to vibrate; measuring an alternating current signal with the frequency f on the second electrode, wherein the amplitude of the obtained signal is U2; under the condition that the semiconductor film layers are in environments with different vacuum degrees, the change of the vibration amplitude of the metal film layers influences the signal transmission characteristics from the first electrode to the second electrode, and the vacuum degree of the vacuum environment to be measured can be obtained by calculating the ratio U2/U1 of the signal amplitude U2 measured by the second electrode to the driving signal amplitude U1 applied to the first electrode.
2. The gas pressure sensor chip of claim 1, wherein the material of the semiconductor thin film layer is silicon nitride or silicon carbide.
3. The gas pressure sensor chip of claim 1, wherein the suspended window has an area smaller than a cross-sectional area of a semiconductor thin film layer deposited on the lower surface of the substrate silicon wafer and a portion of the substrate silicon wafer that has been etched away.
4. The gas pressure sensor chip of claim 1, wherein the material of the metal film layer comprises one or more of aluminum, niobium, and titanium, and has an area smaller than the area of the suspended window.
5. The gas pressure sensor chip of claim 1, wherein the material of the first and second electrodes comprises one or more of aluminum, niobium, titanium metal, and the total area of the intermediate portions of the first and second electrodes is smaller than the area of the metal thin film layer.
6. The gas pressure sensor chip of claim 1, wherein the material of the connection module is epoxy glue or indium metal.
7. The gas pressure sensor chip of claim 1, wherein after the substrate is flipped, the metal thin film layer is opposite to the first electrode and the second electrode, and a distance between the metal thin film layer and the first electrode and the second electrode is within a preset interval.
8. A method for manufacturing a semiconductor thin film-based gas pressure sensor chip, comprising:
depositing a semiconductor film layer on the upper surface and the lower surface of a substrate silicon wafer;
Etching the semiconductor film layer deposited on the lower surface of the substrate silicon wafer according to the preset window area to generate an etching window of the semiconductor film layer;
Etching the substrate silicon wafer through the etching window of the semiconductor film layer to obtain a suspended window of the semiconductor film layer deposited on the upper surface of the substrate silicon wafer;
Depositing a metal film layer on the upper surface of the suspended window;
respectively depositing a first electrode, a second electrode and a connecting module on the upper surface of a lower substrate silicon wafer;
a substrate silicon wafer deposited with the semiconductor film layer and the metal film layer is inverted, and the substrate silicon wafer and a lower substrate silicon wafer deposited with the first electrode, the second electrode and the connecting module are connected through the connecting module;
Applying an alternating current driving signal with the frequency f and the amplitude U1 to the first electrode, wherein f is the frequency of an intrinsic vibration mode of the semiconductor thin film layer, and the alternating current driving signal drives the semiconductor thin film layer and the metal thin film layer to vibrate; measuring an alternating current signal with the frequency f on the second electrode, wherein the amplitude of the obtained signal is U2; under the condition that the semiconductor film layers are in environments with different vacuum degrees, the change of the vibration amplitude of the metal film layers influences the signal transmission characteristics from the first electrode to the second electrode, and the vacuum degree of the vacuum environment to be measured can be obtained by calculating the ratio U2/U1 of the signal amplitude U2 measured by the second electrode to the driving signal amplitude U1 applied to the first electrode.
9. The method of claim 8, wherein the semiconductor thin film layer is deposited on the upper and lower surfaces of the substrate silicon wafer by a low pressure chemical vapor deposition process, the semiconductor thin film layer having in-plane stress higher than a predetermined threshold.
10. The method of manufacturing according to claim 8, wherein connecting the substrate silicon wafer and the lower substrate silicon wafer on which the first electrode, the second electrode, and the connection module are deposited by the connection module comprises:
And adjusting the thickness of the connecting module to control the distance between the substrate silicon wafer and the lower substrate silicon wafer, so that the distance between the metal film layer and the first electrode and the second electrode is within a preset interval.
11. A vacuum gauge comprising a gas pressure sensor chip as claimed in any one of claims 1 to 7.
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