CN118189552A - Photoresist developing method - Google Patents

Photoresist developing method Download PDF

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Publication number
CN118189552A
CN118189552A CN202410338072.0A CN202410338072A CN118189552A CN 118189552 A CN118189552 A CN 118189552A CN 202410338072 A CN202410338072 A CN 202410338072A CN 118189552 A CN118189552 A CN 118189552A
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China
Prior art keywords
photoresist
wafer
developing
liquid
time
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Pending
Application number
CN202410338072.0A
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Chinese (zh)
Inventor
刘希仕
王绪根
朱联合
姚振海
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Hua Hong Semiconductor Wuxi Co Ltd
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Hua Hong Semiconductor Wuxi Co Ltd
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Application filed by Hua Hong Semiconductor Wuxi Co Ltd filed Critical Hua Hong Semiconductor Wuxi Co Ltd
Priority to CN202410338072.0A priority Critical patent/CN118189552A/en
Publication of CN118189552A publication Critical patent/CN118189552A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B5/00—Drying solid materials or objects by processes not involving the application of heat
    • F26B5/08—Drying solid materials or objects by processes not involving the application of heat by centrifugal treatment

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  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

The application relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a photoresist developing method. The photoresist developing method comprises the following steps: in a static state, a first dose of first developing solution is dripped on the photoresist after the wafer is exposed, and the first developing solution expands on the photoresist under the action of surface tension to form a first convex liquid level; after the first convex liquid surface stays on the photoresist for a first developing time, enabling the wafer to rotate at a first rotating speed for a first liquid throwing time, enabling the wafer to be increased to a second rotating speed on the basis of the first rotating speed, rotating at the second rotating speed for the second liquid throwing time, and spin-drying the first developing liquid on the wafer; wherein the first liquid throwing time is longer than the second liquid throwing time; in a static state, dripping a second developing solution with a second dose on the wafer after spin-drying the first developing solution, and expanding the second developing solution on the photoresist under the action of surface tension to form a second convex liquid level; and after the second convex liquid surface stays on the photoresist for a second developing time, the wafer is rinsed by deionized water, and the rotating speed is increased at the same time, so that the wafer is spin-dried.

Description

Photoresist developing method
Technical Field
The application relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a photoresist developing method.
Background
The integrated circuit manufacturing process mainly comprises photoetching, etching, deposition, film, chemical mechanical polishing and other processes. The photoetching process is to transfer the pre-designed mask pattern onto the wafer and includes gluing, exposing, developing and other technological steps.
In the development process, the positive photoresist film structure is formed by dissolving an exposed area, and the negative photoresist is developed to remove an unexposed area, and common development modes are as follows: immersed (immersement), sprayed (spray) and stirred (puddle). The type of photoresist, the thickness of the photoresist, and the exposure wavelength affect the development process and the development time in the development process, for example, the time range for immersion or agitation development is 20-60s, and not more than 120s. The adhesive layer with the film thickness exceeding 10um needs 2-10min, the adhesive thickness reaching 100um, and the development time exceeding 60min.
The line photoresist is reactive to ultraviolet light of I-line (with the wavelength of 365 nm), is generally used for pattern manufacture with medium line width size, and has high viscosity, so that the formed photoresist layer is thick, and the development mode of the related technology for the I-line photoresist is two puddle development, namely the first puddle developing solution is spin-dried through high-speed rotation when the first puddle development is finished, and then the second puddle development is carried out.
However, the step of spin-drying the developing solution at a high speed after the first puddle development is required to be higher, if a common high-speed spin-drying mode is adopted, the instant speed difference is too large, so that the developing solution can splash to the surface of an adjacent wafer to form defects.
Disclosure of Invention
The application provides a photoresist developing method which can solve the problem that developing solution splashes to the surface of an adjacent wafer in the related art.
In order to solve the technical problems described in the background art, the present application provides a photoresist developing method, which includes the following steps:
In a static state, a first developing solution with a first dose is dripped on the photoresist after wafer exposure, and the first developing solution expands on the photoresist under the action of surface tension to form a first convex liquid level;
after the first convex liquid surface stays on the photoresist for a first developing time, enabling the wafer to rotate at a first rotating speed for a first liquid throwing time, enabling the wafer to be increased to a second rotating speed on the basis of the first rotating speed, rotating at the second rotating speed for a second liquid throwing time, and spin-drying the first developing liquid on the wafer; wherein the first liquid throwing time is longer than the second liquid throwing time;
in a static state, dripping a second developing solution with a second dose on the wafer after spin-drying the first developing solution, and expanding the second developing solution on the photoresist under the action of surface tension to form a second convex liquid level;
And after the second convex liquid surface stays on the photoresist for a second developing time, washing the wafer with deionized water and simultaneously spin-drying at an increased rotating speed.
Optionally, after the first convex liquid surface stays on the photoresist for a first developing time, the wafer is rotated at a first rotation speed for a first liquid throwing time, then the wafer is increased to a second rotation speed on the basis of the first rotation speed, the second liquid throwing time is rotated at the second rotation speed, and the first developing liquid on the wafer is dried; wherein the step of the first liquid throwing time being longer than the second liquid throwing time comprises the following steps:
and after the first convex liquid surface stays on the photoresist for a first developing time, rotating the wafer at a first rotating speed of 100rpm to 150rpm for a first liquid throwing time of 5s to 10s, then increasing the wafer to a second rotating speed of 400rpm to 500rpm on the basis of the first rotating speed of 100rpm to 150rpm, rotating the wafer at the second rotating speed of 400rpm to 500rpm for a second liquid throwing time of 1s to 5s, and spin-drying the first developing liquid on the wafer.
Optionally, the step of forming a first convex liquid surface by expanding the first developing solution on the photoresist after exposing the wafer under the action of surface tension by dropping the first developing solution in the first dose on the photoresist in the static state includes:
And in a static state, first developing liquid with a first dosage of 120ml to 180ml is dripped on the photoresist after wafer exposure, and the first developing liquid expands on the photoresist under the action of surface tension to form a first convex liquid level.
Optionally, after the first convex liquid surface stays on the photoresist for a first developing time, the wafer is rotated at a first rotation speed for a first liquid throwing time, then the wafer is increased to a second rotation speed on the basis of the first rotation speed, the second liquid throwing time is rotated at the second rotation speed, and the first developing liquid on the wafer is dried; in the step that the first liquid throwing time is longer than the second liquid throwing time, the first developing time is 5s to 10s.
Optionally, in the static state, the step of dripping the second developing solution with the second dose on the wafer after spin-drying the first developing solution, and expanding the second developing solution on the photoresist under the action of the surface tension to form a second convex liquid surface includes:
in a static state, second developing liquid with a second dosage of 120ml to 180ml is dripped on the wafer after the first developing liquid is spin-dried, and the second developing liquid expands on the photoresist under the action of surface tension to form a second convex liquid level.
Optionally, the step of rinsing the wafer with deionized water while spin-drying is performed after the second convex liquid surface remains on the photoresist for a second time of development, includes:
And after the second convex liquid surface stays on the photoresist for a second development time of 5-10 s, the wafer is rinsed by deionized water, and the rotating speed is increased at the same time for spin-drying.
Optionally, the step of rinsing the wafer with deionized water while increasing spin-drying speed after the second convex liquid surface stays on the photoresist for a second developing time includes:
and after the second convex liquid surface stays on the photoresist for a second developing time, washing the wafer with deionized water and simultaneously increasing the rotating speed to 1500rpm/s to 2000rpm/s for spin-drying.
The technical scheme of the application at least comprises the following advantages: when the process of spin-drying the first developing solution on the wafer is carried out, the low-speed spin-drying is carried out for a long time, and then the medium-speed spin-drying is carried out for a short time, so that a rotating speed gradient is formed, most of the first developing solution is thrown out of the wafer in the low-speed spin-drying process, and the problem of splashing of the first developing solution is avoided.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present application, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 shows a flowchart of a photoresist developing method according to an embodiment of the application.
Detailed Description
The following description of the embodiments of the present application will be made more apparent and fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the application are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
In the description of the present application, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, or can be communicated inside the two components, or can be connected wirelessly or in a wired way. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present application described below may be combined with each other as long as they do not collide with each other.
Fig. 1 shows a flowchart of a photoresist developing method according to an embodiment of the present application, and as can be seen from fig. 1, the photoresist developing method includes the following steps:
step S1: in a static state, a first dose of first developing liquid is dripped on the photoresist after wafer exposure, and the first developing liquid expands on the photoresist under the action of surface tension to form a first convex liquid level.
Wherein, the first developer of the first dose can be dripped on the photoresist after the wafer exposure in a scanning dripping mode, and the first developer of the first dose is 120ml to 180 ml. The first developing time of 5 to 10 seconds is remained after the first developing solution with the first dosage of 120 to 180ml is dripped in 4 to 6 seconds, so that the first developing solution fully reacts with the photoresist after exposure.
Step S2: after the first convex liquid surface stays on the photoresist for a first developing time, enabling the wafer to rotate at a first rotating speed for a first liquid throwing time, enabling the wafer to be increased to a second rotating speed on the basis of the first rotating speed, rotating at the second rotating speed for a second liquid throwing time, and spin-drying the first developing liquid on the wafer; wherein the first liquid throwing time is longer than the second liquid throwing time.
Illustratively, after the first convex liquid surface is allowed to stay on the photoresist for a first developing time, the wafer is rotated at a first rotation speed of 100rpm to 150rpm for a first liquid-throwing time of 5s to 10s, and then the wafer is raised to a second rotation speed of 400rpm to 500rpm on the basis of the first rotation speed of 100rpm to 150rpm for a second liquid-throwing time of 1s to 5s at the second rotation speed of 400rpm to 500rpm, so that the first developing liquid on the wafer is dried.
When the process of spin-drying the first developing solution on the wafer is carried out, the low-speed spin-drying is carried out for a long time, and then the medium-speed spin-drying is carried out for a short time, so that a rotating speed gradient is formed, most of the first developing solution is thrown out of the wafer in the low-speed spin-drying process, and the problem of splashing of the first developing solution is avoided.
Step S3: and in a static state, dripping a second dose of second developing solution on the wafer after spin-drying the first developing solution, and expanding the second developing solution on the photoresist under the action of surface tension to form a second convex liquid level.
After the first developer is dried, a second developer with a second dose of 120ml to 180ml is dripped on the wafer after the first developer is dried, and the second developer is dripped within 4s to 6s and stays for a second development time of 5s to 10s, so that the second developer fully reacts with the photoresist after exposure.
Illustratively, in a resting state, a second dose of 120ml to 180ml of a second developer is deposited on the wafer after spin-drying the first developer, the second developer expanding under surface tension to form a second convex liquid surface on the photoresist.
Step S4: and after the second convex liquid surface stays on the photoresist for a second developing time, washing the wafer with deionized water and simultaneously spin-drying at an increased rotating speed.
Illustratively, the spin-drying is performed by rinsing the wafer with deionized water while increasing the rotational speed to 1500rpm/s to 2000rpm/s after the second convex liquid surface remains on the photoresist for a second development time.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the application.

Claims (7)

1. A photoresist developing method, characterized in that the photoresist developing method comprises the steps of:
In a static state, a first developing solution with a first dose is dripped on the photoresist after wafer exposure, and the first developing solution expands on the photoresist under the action of surface tension to form a first convex liquid level;
after the first convex liquid surface stays on the photoresist for a first developing time, enabling the wafer to rotate at a first rotating speed for a first liquid throwing time, enabling the wafer to be increased to a second rotating speed on the basis of the first rotating speed, rotating at the second rotating speed for a second liquid throwing time, and spin-drying the first developing liquid on the wafer; wherein the first liquid throwing time is longer than the second liquid throwing time;
in a static state, dripping a second developing solution with a second dose on the wafer after spin-drying the first developing solution, and expanding the second developing solution on the photoresist under the action of surface tension to form a second convex liquid level;
And after the second convex liquid surface stays on the photoresist for a second developing time, washing the wafer with deionized water and simultaneously spin-drying at an increased rotating speed.
2. The photoresist developing method according to claim 1, wherein after the first convex liquid surface is caused to stay on the photoresist for a first developing time, the wafer is caused to rotate for a first liquid throwing time at a first rotation speed, and then the wafer is caused to rise to a second rotation speed on the basis of the first rotation speed, and the first developing liquid on the wafer is dried by rotating for a second liquid throwing time at the second rotation speed; wherein the step of the first liquid throwing time being longer than the second liquid throwing time comprises the following steps:
and after the first convex liquid surface stays on the photoresist for a first developing time, rotating the wafer at a first rotating speed of 100rpm to 150rpm for a first liquid throwing time of 5s to 10s, then increasing the wafer to a second rotating speed of 400rpm to 500rpm on the basis of the first rotating speed of 100rpm to 150rpm, rotating the wafer at the second rotating speed of 400rpm to 500rpm for a second liquid throwing time of 1s to 5s, and spin-drying the first developing liquid on the wafer.
3. The photoresist developing method according to claim 1, wherein the step of applying a first dose of a first developer droplet to the exposed photoresist of the wafer in a stationary state, the first developer droplet expanding under the action of a surface tension to form a first convex liquid surface on the photoresist comprises:
And in a static state, first developing liquid with a first dosage of 120ml to 180ml is dripped on the photoresist after wafer exposure, and the first developing liquid expands on the photoresist under the action of surface tension to form a first convex liquid level.
4. The photoresist developing method according to claim 1, wherein after the first convex liquid surface is caused to stay on the photoresist for a first developing time, the wafer is caused to rotate for a first liquid throwing time at a first rotation speed, and then the wafer is caused to rise to a second rotation speed on the basis of the first rotation speed, and the first developing liquid on the wafer is dried by rotating for a second liquid throwing time at the second rotation speed; in the step that the first liquid throwing time is longer than the second liquid throwing time, the first developing time is 5s to 10s.
5. The photoresist developing method according to claim 1, wherein the step of spreading the second developing solution under the action of the surface tension on the photoresist to form a second convex liquid surface by applying the second developing solution in a second dose to the wafer after spin-drying the first developing solution in the stationary state comprises:
in a static state, second developing liquid with a second dosage of 120ml to 180ml is dripped on the wafer after the first developing liquid is spin-dried, and the second developing liquid expands on the photoresist under the action of surface tension to form a second convex liquid level.
6. The photoresist developing method according to claim 1, wherein the step of rinsing the wafer with deionized water while increasing spin-drying after the second convex liquid surface is allowed to stand on the photoresist for a second developing time comprises:
And after the second convex liquid surface stays on the photoresist for a second development time of 5-10 s, the wafer is rinsed by deionized water, and the rotating speed is increased at the same time for spin-drying.
7. The photoresist developing method according to claim 1, wherein the step of rinsing the wafer with deionized water while increasing spin-drying after the second convex liquid surface is allowed to stand on the photoresist for a second developing time comprises:
and after the second convex liquid surface stays on the photoresist for a second developing time, washing the wafer with deionized water and simultaneously increasing the rotating speed to 1500rpm/s to 2000rpm/s for spin-drying.
CN202410338072.0A 2024-03-22 2024-03-22 Photoresist developing method Pending CN118189552A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202410338072.0A CN118189552A (en) 2024-03-22 2024-03-22 Photoresist developing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202410338072.0A CN118189552A (en) 2024-03-22 2024-03-22 Photoresist developing method

Publications (1)

Publication Number Publication Date
CN118189552A true CN118189552A (en) 2024-06-14

Family

ID=91408345

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Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
CN (1) CN118189552A (en)

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