CN118120050A - 半导体装置 - Google Patents

半导体装置 Download PDF

Info

Publication number
CN118120050A
CN118120050A CN202280070495.8A CN202280070495A CN118120050A CN 118120050 A CN118120050 A CN 118120050A CN 202280070495 A CN202280070495 A CN 202280070495A CN 118120050 A CN118120050 A CN 118120050A
Authority
CN
China
Prior art keywords
light receiving
receiving element
sheet
thickness direction
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280070495.8A
Other languages
English (en)
Chinese (zh)
Inventor
松原弘招
大角嘉藏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of CN118120050A publication Critical patent/CN118120050A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/205—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors
    • H10F55/207—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors wherein the electric light source comprises semiconductor devices having potential barriers, e.g. light emitting diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
CN202280070495.8A 2021-10-20 2022-10-13 半导体装置 Pending CN118120050A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-171573 2021-10-20
JP2021171573 2021-10-20
PCT/JP2022/038142 WO2023068149A1 (ja) 2021-10-20 2022-10-13 半導体装置

Publications (1)

Publication Number Publication Date
CN118120050A true CN118120050A (zh) 2024-05-31

Family

ID=86059075

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280070495.8A Pending CN118120050A (zh) 2021-10-20 2022-10-13 半导体装置

Country Status (5)

Country Link
US (1) US20240274743A1 (https=)
JP (1) JPWO2023068149A1 (https=)
CN (1) CN118120050A (https=)
DE (1) DE112022004501T5 (https=)
WO (1) WO2023068149A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01128478A (ja) * 1987-11-12 1989-05-22 Mitsubishi Electric Corp 半導体ホトカプラ装置
JPH02122677A (ja) * 1988-11-01 1990-05-10 Matsushita Electron Corp 光結合半導体装置
JP2009021333A (ja) * 2007-07-11 2009-01-29 Nec Electronics Corp 光結合装置の製造方法及び光結合装置
JP2010153816A (ja) 2008-11-21 2010-07-08 Renesas Electronics Corp フォトカプラおよびその組立方法

Also Published As

Publication number Publication date
JPWO2023068149A1 (https=) 2023-04-27
DE112022004501T5 (de) 2024-08-01
WO2023068149A1 (ja) 2023-04-27
US20240274743A1 (en) 2024-08-15

Similar Documents

Publication Publication Date Title
US12166162B2 (en) Semiconductor light emitting device and method for manufacturing the same
JP6892261B2 (ja) Ｌｅｄパッケージ
CN1992362B (zh) 光半导体器件
CN101675537B (zh) 半导体发光装置
US10050179B2 (en) LED module
JP7240148B2 (ja) 光結合装置
CN101743647B (zh) 半导体发光装置
US10211189B2 (en) LED module
US10978364B2 (en) Semiconductor module
JP6736256B2 (ja) Ｌｅｄパッケージ
JP7029223B2 (ja) 半導体発光装置
KR20110035844A (ko) 반도체 발광장치
CN118120050A (zh) 半导体装置
KR20140008911A (ko) 광 모듈 및 그 제조 방법
US10847689B2 (en) Semiconductor light emitting device and method of manufacturing the same
US10168038B1 (en) Solid state lighting (SSL) apparatus having electrically conductive sheets coupled to solid state lighting on an SSL element carrier
JP2009021303A (ja) 発光装置
US8344500B2 (en) Integrated circuit package module and method of the same
JP2014146846A (ja) チップ型発光素子
JP2019134061A (ja) Ｌｅｄ数字表示器
KR102506588B1 (ko) 발광 다이오드 패키지
JP2018523918A (ja) エレクトロニクスデバイス
WO2022209663A1 (ja) 半導体装置
WO2023090059A1 (ja) 半導体装置
TWI286831B (en) A chip package structure

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination