CN118116985A - Thin film lithium niobate-based integrated indium phosphide photoelectric detector and preparation method thereof - Google Patents
Thin film lithium niobate-based integrated indium phosphide photoelectric detector and preparation method thereof Download PDFInfo
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 144
- 239000010409 thin film Substances 0.000 title claims abstract description 82
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 239000002184 metal Substances 0.000 claims abstract description 53
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 48
- 229920005591 polysilicon Polymers 0.000 claims abstract description 47
- 230000008878 coupling Effects 0.000 claims abstract description 42
- 238000010168 coupling process Methods 0.000 claims abstract description 42
- 238000005859 coupling reaction Methods 0.000 claims abstract description 42
- 230000003287 optical effect Effects 0.000 claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000010408 film Substances 0.000 claims description 47
- 238000011161 development Methods 0.000 claims description 33
- 238000005516 engineering process Methods 0.000 claims description 33
- 238000001259 photo etching Methods 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 238000005566 electron beam evaporation Methods 0.000 claims description 14
- 238000010521 absorption reaction Methods 0.000 claims description 13
- 238000001039 wet etching Methods 0.000 claims description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 230000001939 inductive effect Effects 0.000 claims description 5
- 238000009616 inductively coupled plasma Methods 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 12
- 230000031700 light absorption Effects 0.000 abstract description 2
- 230000010354 integration Effects 0.000 description 11
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 210000002381 plasma Anatomy 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- G—PHYSICS
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- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
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- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
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Abstract
The invention discloses a thin film lithium niobate-based integrated indium phosphide photoelectric detector and a preparation method thereof, the integrated indium phosphide photoelectric detector comprises a silicon-based thin film lithium niobate substrate, the silicon-based thin film lithium niobate substrate comprises a silicon substrate, an oxygen-buried layer and a thin film lithium niobate layer which are sequentially stacked from bottom to top, a thin film lithium niobate ridge optical waveguide and a polysilicon auxiliary enhancement thin film lithium niobate vertical coupling grating are arranged on the thin film lithium niobate layer, a BCB bonding layer is arranged on the upper surface of the rest part of the thin film lithium niobate layer, the upper surface of the thin film lithium niobate ridge optical waveguide and the polysilicon auxiliary enhancement thin film lithium niobate vertical coupling grating, a photoelectric detector is arranged on the upper surface of the BCB bonding layer, and the photoelectric detector is positioned on the BCB bonding layer right above the polysilicon auxiliary enhancement thin film lithium niobate vertical coupling grating. The invention is an integrated process of integrating materials and then detecting the process, and the coupling alignment precision is higher; by adopting the back incidence structure, the P electrode metal on the surface reflects the optical signal to realize secondary light absorption and improve the responsivity of the detector.
Description
Technical Field
The invention belongs to the technical field of photoelectric integration, and particularly relates to a thin film lithium niobate-based integrated indium phosphide photoelectric detector and a preparation method thereof.
Background
With the continuous development and transformation of photonic technology and optoelectronic integration technology, and the requirement of application systems for high integration and miniaturization, the integration of optically active devices and optically passive devices and the chip-level integration of multiple devices are necessarily required. Currently, the main materials of the optical device include silicon on insulating Substrate (SOI), indium phosphide (InP) and silicon-based thin film Lithium Niobate (LNOI), wherein the SOI material is mostly applied to passive devices, and in recent years, with the development of silicon optical integration, a silicon-based platform is one of the hot spots of research; the InP material is mainly used for lasers and photodetectors, and is the first choice material for two active devices; the LNOI material is a development hot spot in recent years, is used for an electro-optical modulator, replaces a lithium niobate material, improves the integration level of a device, and reduces the size of the device.
The photoelectric detector and the electro-optical modulator are key core devices in the fields of optical fiber communication and microwave photons, the integration of the photoelectric detector and the electro-optical modulator can be realized, the size of a chip can be greatly reduced, and the LNOI is the preferred material of the current modulator because the performance of the LNOI-based electro-optical modulator is greatly superior to that of the InP-based electro-optical modulator, and the integration of the photoelectric detector is realized on the basis of the LNOI material. At present, few report of realizing InP photoelectric detector integration on LNOI is provided, the prior art scheme is to realize integration based on inversion bonding of photoelectric detector materials or to prepare the detector first to be integrated on LNOI in a transferring way, the former technical scheme needs to carry out physical thinning, chemical mechanical polishing and corrosion removal on an InP substrate of the photoelectric detector materials after bonding, the process is complex, higher requirements are provided for bonding requirements and process compatibility, and the process risk is larger; the latter solution has the problem of poor alignment accuracy, introducing additional coupling losses.
Disclosure of Invention
The technical problems to be solved are as follows: aiming at the technical problems, the invention provides a thin film lithium niobate-based integrated indium phosphide photoelectric detector and a preparation method thereof, which can effectively solve the defects of complex process and process risk and poor precision caused by removing an InP substrate.
The technical scheme is as follows: in a first aspect, the invention provides a thin film lithium niobate-based integrated indium phosphide photoelectric detector, which comprises a silicon-based thin film lithium niobate substrate, wherein the silicon-based thin film lithium niobate substrate comprises a silicon substrate, an oxygen-buried layer and a thin film lithium niobate layer which are sequentially stacked from bottom to top, a thin film lithium niobate ridge-shaped optical waveguide and a polysilicon auxiliary enhancement thin film lithium niobate vertical coupling grating are arranged on the thin film lithium niobate layer, a BCB bonding layer is arranged on the upper surface of the remaining part of the thin film lithium niobate layer, the upper surface of the thin film lithium niobate ridge-shaped optical waveguide and the upper surface of the polysilicon auxiliary enhancement thin film lithium niobate vertical coupling grating, the photoelectric detector is arranged on the BCB bonding layer right above the polysilicon auxiliary enhancement thin film lithium niobate vertical coupling grating, the photoelectric detector is of a back incidence structure, and comprises an N contact layer table top, an absorption layer, a P contact layer table top and a P electrode metal which are sequentially arranged from bottom to top, and an N electrode metal is arranged on the N contact layer table top.
Preferably, the polysilicon auxiliary enhancement film lithium niobate vertical coupling grating comprises a polysilicon grating and a lithium niobate grating which are arranged up and down, and the thickness of the polysilicon grating is 150-300 nm.
Preferably, the thickness of the BCB bonding layer is 600-1000 nm.
In a second aspect, the invention provides a method for preparing the thin film lithium niobate-based integrated indium phosphide photodetector according to the first aspect, comprising the following steps:
s1, preparing a graph of a film lithium niobate ridge-shaped optical waveguide on a silicon-based film lithium niobate substrate by adopting a photoetching development technology, preparing a metal mask by adopting an electron beam evaporation and stripping process, etching the film lithium niobate ridge-shaped optical waveguide by adopting an inductively coupled plasma, and removing the metal mask;
s2, growing a layer of polysilicon on the film lithium niobate layer, preparing a pattern of the polysilicon auxiliary enhancement film lithium niobate vertical coupling grating by adopting a photoetching development technology, preparing a metal mask by adopting an electron beam evaporation and stripping process, etching the polysilicon auxiliary enhancement film lithium niobate vertical coupling grating by adopting an inductive coupling plasma, and removing the metal mask;
S3, coating BCB (binary coded decimal) serving as a bonding layer on the upper surface of a silicon-based thin film lithium niobate substrate for completing the vertical coupling grating of the thin film lithium niobate ridge optical waveguide and the polysilicon auxiliary enhancement thin film lithium niobate by adopting a spin coating process;
s4, transferring and bonding the stripped indium phosphide photoelectric detector epitaxial layer onto the BCB bonding layer by adopting a bonding process;
S5, preparing a P contact layer mesa pattern by adopting a photoetching development technology, and preparing a P contact layer mesa by adopting wet etching;
S6, preparing an absorption layer graph by adopting a photoetching development technology, and preparing an absorption layer by adopting wet corrosion;
S7, preparing an N contact layer mesa pattern by adopting a photoetching development technology, and preparing an N contact layer mesa by adopting wet etching;
And S8, preparing an N electrode pattern and a P electrode pattern by adopting a photoetching development technology, and preparing an N electrode metal and a P electrode metal by adopting an electron beam evaporation stripping or electroplating process.
Preferably, the thickness of the thin film lithium niobate layer in the silicon-based thin film lithium niobate substrate is 600 nm, the etching depth of lithium niobate in the thin film lithium niobate ridge optical waveguide is 300 nm, and the etching depth of lithium niobate in the polysilicon auxiliary enhanced thin film lithium niobate vertical coupling grating is 300 nm.
Preferably, the metal mask is a composite metal mask composed of titanium 20nm a thick and nickel 120-180 a nm a thick.
Preferably, the thickness of the polysilicon in step S2 is 150-300 nm a.
Preferably, the bonding process is realized by baking and curing in an oven, the temperature is raised from room temperature to the highest baking temperature of 250 ℃, the heating time is 4h, and the bonding process is performed by baking at the temperature of 250 ℃ for 1-2 h.
The beneficial effects are that: the photoelectric detector epitaxial layer is transferred and bonded to the silicon-based thin film lithium niobate substrate, so that the thin film lithium niobate-based integrated detector is realized, and is an integrated process of integrating materials and then integrating the detector, and compared with an integrated process of integrating the detector after integrating the detector, the coupling alignment precision is higher; and a back incidence structure is adopted, and the P electrode metal on the surface reflects the optical signal to realize secondary light absorption, so that the responsivity of the detector is improved.
Drawings
FIG. 1 is a schematic diagram of a silicon-based thin film lithium niobate substrate structure;
FIG. 2 is a schematic illustration of a thin film lithium niobate ridge optical waveguide fabrication;
FIG. 3 is a schematic illustration of a polysilicon-assisted enhancement film lithium niobate vertical coupling grating fabrication;
FIG. 4 is a schematic illustration of a coated BCB bond layer;
FIG. 5 is a schematic diagram of indium phosphide photodetector epitaxial layer transfer bonding;
FIG. 6 is a schematic diagram of a cross-sectional structure of a thin film lithium niobate-based integrated indium phosphide photodetector;
FIG. 7 is a schematic front view of a thin film lithium niobate-based integrated indium phosphide photodetector;
FIG. 8 is a schematic diagram of a three-dimensional structure of a thin film lithium niobate-based integrated indium phosphide photodetector;
In the figure: 1. the semiconductor device comprises a silicon substrate, 2 parts of an oxygen-buried layer, 3 parts of a thin film lithium niobate ridge optical waveguide, 4 parts of a polysilicon auxiliary enhanced thin film lithium niobate vertical coupling grating, 4-1 parts of a polysilicon grating, 4-2 parts of a lithium niobate grating, 5 parts of a BCB bonding layer, 6 parts of a photoelectric detector, 6-1 parts of an N contact layer table top, 6-2 parts of an N electrode metal, 6-3 parts of an absorption layer, 6-4 parts of a P contact layer table top, 6-5 parts of a P electrode metal, 7 parts of a thin film lithium niobate layer, 8 parts of an indium phosphide photoelectric detector epitaxial layer.
Detailed Description
The invention is described in detail below with reference to the attached drawings and the specific embodiments:
Example 1
As shown in fig. 6-8, the integrated indium phosphide photoelectric detector based on the film lithium niobate comprises a silicon-based film lithium niobate substrate, the silicon-based film lithium niobate substrate comprises a silicon substrate 1, an oxygen buried layer 2 and a film lithium niobate layer 7 which are sequentially stacked from bottom to top, a part of the upper surface of the film lithium niobate layer 7 is provided with a film lithium niobate ridge optical waveguide 3 and a polysilicon auxiliary enhancement film lithium niobate vertical coupling grating 4, the polysilicon auxiliary enhancement film lithium niobate vertical coupling grating 4 comprises a polysilicon grating 4-1 and a lithium niobate grating 4-2 which are arranged up and down, the rest part of the film lithium niobate layer 7 is provided with a BCB bonding layer 5, the upper surface of the BCB bonding layer 5 is provided with a photoelectric detector 6, the photoelectric detector 6 is positioned on the BCB bonding layer 5 right above the polysilicon auxiliary enhancement film lithium niobate vertical coupling grating 4, the photoelectric detector 6 is of a back-side structure, and comprises a metal table top contact surface 1-6 and a metal table top contact surface 6-6 which are sequentially arranged on the surface of the film lithium niobate vertical coupling grating 4-1-2.
Example 2
As shown in fig. 1-6, a method for preparing a thin film lithium niobate-based integrated indium phosphide photodetector comprises the following steps:
S1, preparing a graph of a film lithium niobate ridge optical waveguide 3 on a silicon-based film lithium niobate substrate by adopting a photoetching development technology, preparing a metal mask by adopting an electron beam evaporation and stripping process, etching the film lithium niobate ridge optical waveguide 3 by adopting an inductively coupled plasma, and removing the metal mask, wherein the metal mask is a composite metal mask consisting of 20 nm thick titanium and 120 nm thick nickel, and the etching depth of the film lithium niobate ridge optical waveguide 3 is 300 nm;
s2, growing a layer of polysilicon with the thickness of 150 nm on the thin film lithium niobate layer 7, preparing a pattern of the polysilicon auxiliary reinforced thin film lithium niobate vertical coupling grating 4 by adopting a photoetching development technology, preparing a metal mask by adopting an electron beam evaporation and stripping process, sequentially etching the polysilicon grating 4-1 and the lithium niobate grating 4-2 by adopting inductive coupling plasmas to form the polysilicon auxiliary reinforced thin film lithium niobate vertical coupling grating 4, removing the metal mask, wherein the metal mask is titanium with the thickness of 20 nm and nickel with the thickness of 120 nm, the etching depth of the polysilicon grating 4-1 is 150 nm, and the etching depth of the lithium niobate grating 4-2 is 300 nm;
S3, coating BCB (benzocyclobutene) with the thickness of 600 nm on the upper surface of a silicon-based film lithium niobate substrate of which the film lithium niobate ridge optical waveguide 3 and the polysilicon auxiliary enhancement film lithium niobate vertical coupling grating 4 are finished by adopting a spin coating process as a bonding layer;
S4, transferring and bonding the stripped indium phosphide photoelectric detector epitaxial layer 8 onto the BCB bonding layer 5 by adopting a bonding process, wherein the bonding process is realized by baking and curing in an oven, the temperature is raised from room temperature to the highest baking temperature of 250 ℃, the heating time is 4 h, and the baking is carried out at the temperature of 250 ℃ for 1 h;
s5, preparing a pattern of the P contact layer table top 6-4 by adopting a photoetching development technology, and preparing the P contact layer table top 6-4 by adopting wet etching;
S6, preparing a figure of the absorption layer 6-3 by adopting a photoetching development technology, and preparing the absorption layer 6-3 by adopting wet etching;
s7, preparing an N contact layer table top 6-1 graph by adopting a photoetching development technology, and preparing an N contact layer table top 6-1 by adopting wet etching;
S8, preparing an N electrode pattern and a P electrode pattern by adopting a photoetching development technology, and preparing an N electrode metal 6-2 and a P electrode metal 6-5 by adopting electron beam evaporation stripping.
Example 3
The preparation method of the thin film lithium niobate-based integrated indium phosphide photoelectric detector comprises the following steps:
s1, preparing a graph of a film lithium niobate ridge optical waveguide 3 on a silicon-based film lithium niobate substrate by adopting a photoetching development technology, preparing a metal mask by adopting an electron beam evaporation and stripping process, etching the film lithium niobate ridge optical waveguide 3 by adopting an inductively coupled plasma, and removing the metal mask, wherein the metal mask is a composite metal mask consisting of titanium with the thickness of 20 nm and nickel with the thickness of 150 nm, and the etching depth of the film lithium niobate ridge optical waveguide 3 is 300 nm;
S2, growing a layer of polycrystalline silicon with the thickness of 200 nm on the thin film lithium niobate layer 7, preparing a pattern of the polycrystalline silicon auxiliary reinforced thin film lithium niobate vertical coupling grating 4 by adopting a photoetching development technology, preparing a metal mask by adopting an electron beam evaporation and stripping process, sequentially etching the polycrystalline silicon grating 4-1 and the lithium niobate grating 4-2 by adopting inductive coupling plasmas to form the polycrystalline silicon auxiliary reinforced thin film lithium niobate vertical coupling grating 4, removing the metal mask, wherein the metal mask is titanium with the thickness of 20 nm and nickel with the thickness of 150 nm, the etching depth of the polycrystalline silicon grating 4-1 is 200 nm, and the etching depth of the lithium niobate grating 4-2 is 300 nm;
S3, coating BCB with the thickness of 800 nm on the upper surface of a silicon-based film lithium niobate substrate of which the film lithium niobate ridge optical waveguide 3 and the polysilicon auxiliary reinforced film lithium niobate vertical coupling grating 4 are finished by adopting a spin coating process as a bonding layer;
S4, transferring and bonding the stripped indium phosphide photoelectric detector epitaxial layer 8 onto the BCB bonding layer 5 by adopting a bonding process, wherein the bonding process is realized by baking and curing in an oven, the temperature is raised from room temperature to the highest baking temperature of 250 ℃, the heating time is 4h, and the baking is carried out at the temperature of 250 ℃ for 1.5 h;
s5, preparing a pattern of the P contact layer table top 6-4 by adopting a photoetching development technology, and preparing the P contact layer table top 6-4 by adopting wet etching;
S6, preparing a figure of the absorption layer 6-3 by adopting a photoetching development technology, and preparing the absorption layer 6-3 by adopting wet etching;
s7, preparing an N contact layer table top 6-1 graph by adopting a photoetching development technology, and preparing an N contact layer table top 6-1 by adopting wet etching;
s8, preparing patterns of the N electrode 6-2 and the P electrode 6-5 by adopting a photoetching development technology, and preparing the N electrode metal 6-2 and the P electrode metal 6-5 by adopting electron beam evaporation stripping.
Example 4
The preparation method of the thin film lithium niobate-based integrated indium phosphide photoelectric detector comprises the following steps:
S1, preparing a graph of a film lithium niobate ridge optical waveguide 3 on a silicon-based film lithium niobate substrate by adopting a photoetching development technology, preparing a metal mask by adopting an electron beam evaporation and stripping process, etching the film lithium niobate ridge optical waveguide 3 by adopting an inductively coupled plasma, and removing the metal mask, wherein the metal mask is a composite metal mask consisting of titanium with the thickness of 20 nm and nickel with the thickness of 180 nm, and the etching depth of the film lithium niobate ridge optical waveguide is 300 nm;
S2, growing a layer of polysilicon with the thickness of 300 nm on the thin film lithium niobate layer 7, preparing a pattern of the polysilicon auxiliary reinforced thin film lithium niobate vertical coupling grating 4 by adopting a photoetching development technology, preparing a metal mask by adopting an electron beam evaporation and stripping process, sequentially etching the polysilicon grating 4-1 and the lithium niobate grating 4-2 by adopting inductive coupling plasmas to form the polysilicon auxiliary reinforced thin film lithium niobate vertical coupling grating 4, removing the metal mask, wherein the metal mask is titanium with the thickness of 20 nm and nickel with the thickness of 180 nm, the etching depth of the polysilicon grating 4-1 is 300 nm, and the etching depth of the lithium niobate grating 4-2 is 300 nm;
s3, coating BCB with the thickness of 1000 nm on the upper surface of a silicon-based film lithium niobate substrate of which the film lithium niobate ridge optical waveguide 3 and the polysilicon auxiliary enhancement film lithium niobate vertical coupling grating 4 are finished by adopting a spin coating process as a bonding layer;
s4, transferring and bonding the stripped indium phosphide photoelectric detector epitaxial layer 8 onto the BCB bonding layer 5 by adopting a bonding process, wherein the bonding process is realized by baking and curing in an oven, the temperature is raised from room temperature to the highest baking temperature of 250 ℃, the heating time is 4 h, and the baking is carried out at the temperature of 250 ℃ for 2 h;
s5, preparing a pattern of the P contact layer table top 6-4 by adopting a photoetching development technology, and preparing the P contact layer table top 6-4 by adopting wet etching;
S6, preparing a figure of the absorption layer 6-3 by adopting a photoetching development technology, and preparing the absorption layer 6-3 by adopting wet etching;
s7, preparing an N contact layer table top 6-1 graph by adopting a photoetching development technology, and preparing an N contact layer table top 6-1 by adopting wet etching;
s8, preparing patterns of the N electrode 6-2 and the P electrode 6-5 by adopting a photoetching development technology, and preparing the N electrode metal 6-2 and the P electrode metal 6-5 by adopting an electroplating technology.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (8)
1. A thin film lithium niobate-based integrated indium phosphide photoelectric detector is characterized in that: the solar cell comprises a silicon-based thin-film lithium niobate substrate, wherein the silicon-based thin-film lithium niobate substrate comprises a silicon substrate, an oxygen burying layer and a thin-film lithium niobate layer which are sequentially stacked from bottom to top, a thin-film lithium niobate ridge-shaped optical waveguide and a polysilicon auxiliary enhancement thin-film lithium niobate vertical coupling grating are arranged on the thin-film lithium niobate layer, a BCB bonding layer is arranged on the upper surface of the rest part of the thin-film lithium niobate layer, the upper surface of the thin-film lithium niobate ridge-shaped optical waveguide and the upper surface of the polysilicon auxiliary enhancement thin-film lithium niobate vertical coupling grating, a photoelectric detector is arranged on the BCB bonding layer right above the polysilicon auxiliary enhancement thin-film lithium niobate vertical coupling grating, the photoelectric detector is of a back incidence structure, and comprises an N contact layer table top, an absorption layer, a P contact layer table top and P electrode metal which are sequentially arranged from bottom to top, and N electrode metal is arranged on the N contact layer table top.
2. The thin film lithium niobate-based integrated indium phosphide photodetector as recited in claim 1, wherein: the polysilicon auxiliary reinforced film lithium niobate vertical coupling grating comprises a polysilicon grating and a lithium niobate grating which are arranged up and down, wherein the thickness of the polysilicon grating is 150-300 nm.
3. The thin film lithium niobate-based integrated indium phosphide photodetector as recited in claim 1, wherein: the thickness of the BCB bonding layer is 600-1000 nm.
4. A method of making a thin film lithium niobate-based integrated indium phosphide photodetector as recited in any one of claims 1-3, comprising the steps of:
s1, preparing a graph of a film lithium niobate ridge-shaped optical waveguide on a silicon-based film lithium niobate substrate by adopting a photoetching development technology, preparing a metal mask by adopting an electron beam evaporation and stripping process, etching the film lithium niobate ridge-shaped optical waveguide by adopting an inductively coupled plasma, and removing the metal mask;
s2, growing a layer of polysilicon on the film lithium niobate layer, preparing a pattern of the polysilicon auxiliary enhancement film lithium niobate vertical coupling grating by adopting a photoetching development technology, preparing a metal mask by adopting an electron beam evaporation and stripping process, etching the polysilicon auxiliary enhancement film lithium niobate vertical coupling grating by adopting an inductive coupling plasma, and removing the metal mask;
S3, coating BCB (binary coded decimal) serving as a bonding layer on the upper surface of a silicon-based thin film lithium niobate substrate for completing the vertical coupling grating of the thin film lithium niobate ridge optical waveguide and the polysilicon auxiliary enhancement thin film lithium niobate by adopting a spin coating process;
s4, transferring and bonding the stripped indium phosphide photoelectric detector epitaxial layer onto the BCB bonding layer by adopting a bonding process;
S5, preparing a P contact layer mesa pattern by adopting a photoetching development technology, and preparing a P contact layer mesa by adopting wet etching;
S6, preparing an absorption layer graph by adopting a photoetching development technology, and preparing an absorption layer by adopting wet corrosion;
S7, preparing an N contact layer mesa pattern by adopting a photoetching development technology, and preparing an N contact layer mesa by adopting wet etching;
And S8, preparing an N electrode pattern and a P electrode pattern by adopting a photoetching development technology, and preparing an N electrode metal and a P electrode metal by adopting an electron beam evaporation stripping or electroplating process.
5. The method for preparing the thin film lithium niobate-based integrated indium phosphide photoelectric detector as recited in claim 4, wherein the method comprises the following steps: the thickness of the thin film lithium niobate layer in the silicon-based thin film lithium niobate substrate is 600 nm, the etching depth of lithium niobate in the thin film lithium niobate ridge optical waveguide is 300 nm, and the etching depth of lithium niobate in the polysilicon auxiliary enhanced thin film lithium niobate vertical coupling grating is 300 nm.
6. The method for preparing the thin film lithium niobate-based integrated indium phosphide photoelectric detector as recited in claim 4, wherein the method comprises the following steps: the metal mask is a composite metal mask composed of titanium with the thickness of 20 nm and nickel with the thickness of 120-180: 180 nm.
7. The method for preparing the thin film lithium niobate-based integrated indium phosphide photoelectric detector as recited in claim 4, wherein the method comprises the following steps: the thickness of the polysilicon in the step S2 is 150-300 nm.
8. The method for preparing the thin film lithium niobate-based integrated indium phosphide photoelectric detector as recited in claim 4, wherein the method comprises the following steps: the bonding process is realized by baking and curing in an oven, the temperature is raised from room temperature to the highest baking temperature of 250 ℃, the heating time is 4h, and the bonding process is performed at the temperature of 250 ℃ for 1-2 h.
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