CN118116985A - Thin film lithium niobate-based integrated indium phosphide photoelectric detector and preparation method thereof - Google Patents

Thin film lithium niobate-based integrated indium phosphide photoelectric detector and preparation method thereof Download PDF

Info

Publication number
CN118116985A
CN118116985A CN202311671026.4A CN202311671026A CN118116985A CN 118116985 A CN118116985 A CN 118116985A CN 202311671026 A CN202311671026 A CN 202311671026A CN 118116985 A CN118116985 A CN 118116985A
Authority
CN
China
Prior art keywords
lithium niobate
film lithium
thin film
adopting
preparing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202311671026.4A
Other languages
Chinese (zh)
Inventor
顾晓文
王宇轩
李冠宇
戴家赟
钱广
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CETC 55 Research Institute
Original Assignee
CETC 55 Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CETC 55 Research Institute filed Critical CETC 55 Research Institute
Priority to CN202311671026.4A priority Critical patent/CN118116985A/en
Publication of CN118116985A publication Critical patent/CN118116985A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0232Optical elements or arrangements associated with the device
    • H01L31/02327Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01DMEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/26Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)

Abstract

The invention discloses a thin film lithium niobate-based integrated indium phosphide photoelectric detector and a preparation method thereof, the integrated indium phosphide photoelectric detector comprises a silicon-based thin film lithium niobate substrate, the silicon-based thin film lithium niobate substrate comprises a silicon substrate, an oxygen-buried layer and a thin film lithium niobate layer which are sequentially stacked from bottom to top, a thin film lithium niobate ridge optical waveguide and a polysilicon auxiliary enhancement thin film lithium niobate vertical coupling grating are arranged on the thin film lithium niobate layer, a BCB bonding layer is arranged on the upper surface of the rest part of the thin film lithium niobate layer, the upper surface of the thin film lithium niobate ridge optical waveguide and the polysilicon auxiliary enhancement thin film lithium niobate vertical coupling grating, a photoelectric detector is arranged on the upper surface of the BCB bonding layer, and the photoelectric detector is positioned on the BCB bonding layer right above the polysilicon auxiliary enhancement thin film lithium niobate vertical coupling grating. The invention is an integrated process of integrating materials and then detecting the process, and the coupling alignment precision is higher; by adopting the back incidence structure, the P electrode metal on the surface reflects the optical signal to realize secondary light absorption and improve the responsivity of the detector.

Description

Thin film lithium niobate-based integrated indium phosphide photoelectric detector and preparation method thereof
Technical Field
The invention belongs to the technical field of photoelectric integration, and particularly relates to a thin film lithium niobate-based integrated indium phosphide photoelectric detector and a preparation method thereof.
Background
With the continuous development and transformation of photonic technology and optoelectronic integration technology, and the requirement of application systems for high integration and miniaturization, the integration of optically active devices and optically passive devices and the chip-level integration of multiple devices are necessarily required. Currently, the main materials of the optical device include silicon on insulating Substrate (SOI), indium phosphide (InP) and silicon-based thin film Lithium Niobate (LNOI), wherein the SOI material is mostly applied to passive devices, and in recent years, with the development of silicon optical integration, a silicon-based platform is one of the hot spots of research; the InP material is mainly used for lasers and photodetectors, and is the first choice material for two active devices; the LNOI material is a development hot spot in recent years, is used for an electro-optical modulator, replaces a lithium niobate material, improves the integration level of a device, and reduces the size of the device.
The photoelectric detector and the electro-optical modulator are key core devices in the fields of optical fiber communication and microwave photons, the integration of the photoelectric detector and the electro-optical modulator can be realized, the size of a chip can be greatly reduced, and the LNOI is the preferred material of the current modulator because the performance of the LNOI-based electro-optical modulator is greatly superior to that of the InP-based electro-optical modulator, and the integration of the photoelectric detector is realized on the basis of the LNOI material. At present, few report of realizing InP photoelectric detector integration on LNOI is provided, the prior art scheme is to realize integration based on inversion bonding of photoelectric detector materials or to prepare the detector first to be integrated on LNOI in a transferring way, the former technical scheme needs to carry out physical thinning, chemical mechanical polishing and corrosion removal on an InP substrate of the photoelectric detector materials after bonding, the process is complex, higher requirements are provided for bonding requirements and process compatibility, and the process risk is larger; the latter solution has the problem of poor alignment accuracy, introducing additional coupling losses.
Disclosure of Invention
The technical problems to be solved are as follows: aiming at the technical problems, the invention provides a thin film lithium niobate-based integrated indium phosphide photoelectric detector and a preparation method thereof, which can effectively solve the defects of complex process and process risk and poor precision caused by removing an InP substrate.
The technical scheme is as follows: in a first aspect, the invention provides a thin film lithium niobate-based integrated indium phosphide photoelectric detector, which comprises a silicon-based thin film lithium niobate substrate, wherein the silicon-based thin film lithium niobate substrate comprises a silicon substrate, an oxygen-buried layer and a thin film lithium niobate layer which are sequentially stacked from bottom to top, a thin film lithium niobate ridge-shaped optical waveguide and a polysilicon auxiliary enhancement thin film lithium niobate vertical coupling grating are arranged on the thin film lithium niobate layer, a BCB bonding layer is arranged on the upper surface of the remaining part of the thin film lithium niobate layer, the upper surface of the thin film lithium niobate ridge-shaped optical waveguide and the upper surface of the polysilicon auxiliary enhancement thin film lithium niobate vertical coupling grating, the photoelectric detector is arranged on the BCB bonding layer right above the polysilicon auxiliary enhancement thin film lithium niobate vertical coupling grating, the photoelectric detector is of a back incidence structure, and comprises an N contact layer table top, an absorption layer, a P contact layer table top and a P electrode metal which are sequentially arranged from bottom to top, and an N electrode metal is arranged on the N contact layer table top.
Preferably, the polysilicon auxiliary enhancement film lithium niobate vertical coupling grating comprises a polysilicon grating and a lithium niobate grating which are arranged up and down, and the thickness of the polysilicon grating is 150-300 nm.
Preferably, the thickness of the BCB bonding layer is 600-1000 nm.
In a second aspect, the invention provides a method for preparing the thin film lithium niobate-based integrated indium phosphide photodetector according to the first aspect, comprising the following steps:
s1, preparing a graph of a film lithium niobate ridge-shaped optical waveguide on a silicon-based film lithium niobate substrate by adopting a photoetching development technology, preparing a metal mask by adopting an electron beam evaporation and stripping process, etching the film lithium niobate ridge-shaped optical waveguide by adopting an inductively coupled plasma, and removing the metal mask;
s2, growing a layer of polysilicon on the film lithium niobate layer, preparing a pattern of the polysilicon auxiliary enhancement film lithium niobate vertical coupling grating by adopting a photoetching development technology, preparing a metal mask by adopting an electron beam evaporation and stripping process, etching the polysilicon auxiliary enhancement film lithium niobate vertical coupling grating by adopting an inductive coupling plasma, and removing the metal mask;
S3, coating BCB (binary coded decimal) serving as a bonding layer on the upper surface of a silicon-based thin film lithium niobate substrate for completing the vertical coupling grating of the thin film lithium niobate ridge optical waveguide and the polysilicon auxiliary enhancement thin film lithium niobate by adopting a spin coating process;
s4, transferring and bonding the stripped indium phosphide photoelectric detector epitaxial layer onto the BCB bonding layer by adopting a bonding process;
S5, preparing a P contact layer mesa pattern by adopting a photoetching development technology, and preparing a P contact layer mesa by adopting wet etching;
S6, preparing an absorption layer graph by adopting a photoetching development technology, and preparing an absorption layer by adopting wet corrosion;
S7, preparing an N contact layer mesa pattern by adopting a photoetching development technology, and preparing an N contact layer mesa by adopting wet etching;
And S8, preparing an N electrode pattern and a P electrode pattern by adopting a photoetching development technology, and preparing an N electrode metal and a P electrode metal by adopting an electron beam evaporation stripping or electroplating process.
Preferably, the thickness of the thin film lithium niobate layer in the silicon-based thin film lithium niobate substrate is 600 nm, the etching depth of lithium niobate in the thin film lithium niobate ridge optical waveguide is 300 nm, and the etching depth of lithium niobate in the polysilicon auxiliary enhanced thin film lithium niobate vertical coupling grating is 300 nm.
Preferably, the metal mask is a composite metal mask composed of titanium 20nm a thick and nickel 120-180 a nm a thick.
Preferably, the thickness of the polysilicon in step S2 is 150-300 nm a.
Preferably, the bonding process is realized by baking and curing in an oven, the temperature is raised from room temperature to the highest baking temperature of 250 ℃, the heating time is 4h, and the bonding process is performed by baking at the temperature of 250 ℃ for 1-2 h.
The beneficial effects are that: the photoelectric detector epitaxial layer is transferred and bonded to the silicon-based thin film lithium niobate substrate, so that the thin film lithium niobate-based integrated detector is realized, and is an integrated process of integrating materials and then integrating the detector, and compared with an integrated process of integrating the detector after integrating the detector, the coupling alignment precision is higher; and a back incidence structure is adopted, and the P electrode metal on the surface reflects the optical signal to realize secondary light absorption, so that the responsivity of the detector is improved.
Drawings
FIG. 1 is a schematic diagram of a silicon-based thin film lithium niobate substrate structure;
FIG. 2 is a schematic illustration of a thin film lithium niobate ridge optical waveguide fabrication;
FIG. 3 is a schematic illustration of a polysilicon-assisted enhancement film lithium niobate vertical coupling grating fabrication;
FIG. 4 is a schematic illustration of a coated BCB bond layer;
FIG. 5 is a schematic diagram of indium phosphide photodetector epitaxial layer transfer bonding;
FIG. 6 is a schematic diagram of a cross-sectional structure of a thin film lithium niobate-based integrated indium phosphide photodetector;
FIG. 7 is a schematic front view of a thin film lithium niobate-based integrated indium phosphide photodetector;
FIG. 8 is a schematic diagram of a three-dimensional structure of a thin film lithium niobate-based integrated indium phosphide photodetector;
In the figure: 1. the semiconductor device comprises a silicon substrate, 2 parts of an oxygen-buried layer, 3 parts of a thin film lithium niobate ridge optical waveguide, 4 parts of a polysilicon auxiliary enhanced thin film lithium niobate vertical coupling grating, 4-1 parts of a polysilicon grating, 4-2 parts of a lithium niobate grating, 5 parts of a BCB bonding layer, 6 parts of a photoelectric detector, 6-1 parts of an N contact layer table top, 6-2 parts of an N electrode metal, 6-3 parts of an absorption layer, 6-4 parts of a P contact layer table top, 6-5 parts of a P electrode metal, 7 parts of a thin film lithium niobate layer, 8 parts of an indium phosphide photoelectric detector epitaxial layer.
Detailed Description
The invention is described in detail below with reference to the attached drawings and the specific embodiments:
Example 1
As shown in fig. 6-8, the integrated indium phosphide photoelectric detector based on the film lithium niobate comprises a silicon-based film lithium niobate substrate, the silicon-based film lithium niobate substrate comprises a silicon substrate 1, an oxygen buried layer 2 and a film lithium niobate layer 7 which are sequentially stacked from bottom to top, a part of the upper surface of the film lithium niobate layer 7 is provided with a film lithium niobate ridge optical waveguide 3 and a polysilicon auxiliary enhancement film lithium niobate vertical coupling grating 4, the polysilicon auxiliary enhancement film lithium niobate vertical coupling grating 4 comprises a polysilicon grating 4-1 and a lithium niobate grating 4-2 which are arranged up and down, the rest part of the film lithium niobate layer 7 is provided with a BCB bonding layer 5, the upper surface of the BCB bonding layer 5 is provided with a photoelectric detector 6, the photoelectric detector 6 is positioned on the BCB bonding layer 5 right above the polysilicon auxiliary enhancement film lithium niobate vertical coupling grating 4, the photoelectric detector 6 is of a back-side structure, and comprises a metal table top contact surface 1-6 and a metal table top contact surface 6-6 which are sequentially arranged on the surface of the film lithium niobate vertical coupling grating 4-1-2.
Example 2
As shown in fig. 1-6, a method for preparing a thin film lithium niobate-based integrated indium phosphide photodetector comprises the following steps:
S1, preparing a graph of a film lithium niobate ridge optical waveguide 3 on a silicon-based film lithium niobate substrate by adopting a photoetching development technology, preparing a metal mask by adopting an electron beam evaporation and stripping process, etching the film lithium niobate ridge optical waveguide 3 by adopting an inductively coupled plasma, and removing the metal mask, wherein the metal mask is a composite metal mask consisting of 20 nm thick titanium and 120 nm thick nickel, and the etching depth of the film lithium niobate ridge optical waveguide 3 is 300 nm;
s2, growing a layer of polysilicon with the thickness of 150 nm on the thin film lithium niobate layer 7, preparing a pattern of the polysilicon auxiliary reinforced thin film lithium niobate vertical coupling grating 4 by adopting a photoetching development technology, preparing a metal mask by adopting an electron beam evaporation and stripping process, sequentially etching the polysilicon grating 4-1 and the lithium niobate grating 4-2 by adopting inductive coupling plasmas to form the polysilicon auxiliary reinforced thin film lithium niobate vertical coupling grating 4, removing the metal mask, wherein the metal mask is titanium with the thickness of 20 nm and nickel with the thickness of 120 nm, the etching depth of the polysilicon grating 4-1 is 150 nm, and the etching depth of the lithium niobate grating 4-2 is 300 nm;
S3, coating BCB (benzocyclobutene) with the thickness of 600 nm on the upper surface of a silicon-based film lithium niobate substrate of which the film lithium niobate ridge optical waveguide 3 and the polysilicon auxiliary enhancement film lithium niobate vertical coupling grating 4 are finished by adopting a spin coating process as a bonding layer;
S4, transferring and bonding the stripped indium phosphide photoelectric detector epitaxial layer 8 onto the BCB bonding layer 5 by adopting a bonding process, wherein the bonding process is realized by baking and curing in an oven, the temperature is raised from room temperature to the highest baking temperature of 250 ℃, the heating time is 4 h, and the baking is carried out at the temperature of 250 ℃ for 1 h;
s5, preparing a pattern of the P contact layer table top 6-4 by adopting a photoetching development technology, and preparing the P contact layer table top 6-4 by adopting wet etching;
S6, preparing a figure of the absorption layer 6-3 by adopting a photoetching development technology, and preparing the absorption layer 6-3 by adopting wet etching;
s7, preparing an N contact layer table top 6-1 graph by adopting a photoetching development technology, and preparing an N contact layer table top 6-1 by adopting wet etching;
S8, preparing an N electrode pattern and a P electrode pattern by adopting a photoetching development technology, and preparing an N electrode metal 6-2 and a P electrode metal 6-5 by adopting electron beam evaporation stripping.
Example 3
The preparation method of the thin film lithium niobate-based integrated indium phosphide photoelectric detector comprises the following steps:
s1, preparing a graph of a film lithium niobate ridge optical waveguide 3 on a silicon-based film lithium niobate substrate by adopting a photoetching development technology, preparing a metal mask by adopting an electron beam evaporation and stripping process, etching the film lithium niobate ridge optical waveguide 3 by adopting an inductively coupled plasma, and removing the metal mask, wherein the metal mask is a composite metal mask consisting of titanium with the thickness of 20 nm and nickel with the thickness of 150 nm, and the etching depth of the film lithium niobate ridge optical waveguide 3 is 300 nm;
S2, growing a layer of polycrystalline silicon with the thickness of 200 nm on the thin film lithium niobate layer 7, preparing a pattern of the polycrystalline silicon auxiliary reinforced thin film lithium niobate vertical coupling grating 4 by adopting a photoetching development technology, preparing a metal mask by adopting an electron beam evaporation and stripping process, sequentially etching the polycrystalline silicon grating 4-1 and the lithium niobate grating 4-2 by adopting inductive coupling plasmas to form the polycrystalline silicon auxiliary reinforced thin film lithium niobate vertical coupling grating 4, removing the metal mask, wherein the metal mask is titanium with the thickness of 20 nm and nickel with the thickness of 150 nm, the etching depth of the polycrystalline silicon grating 4-1 is 200 nm, and the etching depth of the lithium niobate grating 4-2 is 300 nm;
S3, coating BCB with the thickness of 800 nm on the upper surface of a silicon-based film lithium niobate substrate of which the film lithium niobate ridge optical waveguide 3 and the polysilicon auxiliary reinforced film lithium niobate vertical coupling grating 4 are finished by adopting a spin coating process as a bonding layer;
S4, transferring and bonding the stripped indium phosphide photoelectric detector epitaxial layer 8 onto the BCB bonding layer 5 by adopting a bonding process, wherein the bonding process is realized by baking and curing in an oven, the temperature is raised from room temperature to the highest baking temperature of 250 ℃, the heating time is 4h, and the baking is carried out at the temperature of 250 ℃ for 1.5 h;
s5, preparing a pattern of the P contact layer table top 6-4 by adopting a photoetching development technology, and preparing the P contact layer table top 6-4 by adopting wet etching;
S6, preparing a figure of the absorption layer 6-3 by adopting a photoetching development technology, and preparing the absorption layer 6-3 by adopting wet etching;
s7, preparing an N contact layer table top 6-1 graph by adopting a photoetching development technology, and preparing an N contact layer table top 6-1 by adopting wet etching;
s8, preparing patterns of the N electrode 6-2 and the P electrode 6-5 by adopting a photoetching development technology, and preparing the N electrode metal 6-2 and the P electrode metal 6-5 by adopting electron beam evaporation stripping.
Example 4
The preparation method of the thin film lithium niobate-based integrated indium phosphide photoelectric detector comprises the following steps:
S1, preparing a graph of a film lithium niobate ridge optical waveguide 3 on a silicon-based film lithium niobate substrate by adopting a photoetching development technology, preparing a metal mask by adopting an electron beam evaporation and stripping process, etching the film lithium niobate ridge optical waveguide 3 by adopting an inductively coupled plasma, and removing the metal mask, wherein the metal mask is a composite metal mask consisting of titanium with the thickness of 20 nm and nickel with the thickness of 180 nm, and the etching depth of the film lithium niobate ridge optical waveguide is 300 nm;
S2, growing a layer of polysilicon with the thickness of 300 nm on the thin film lithium niobate layer 7, preparing a pattern of the polysilicon auxiliary reinforced thin film lithium niobate vertical coupling grating 4 by adopting a photoetching development technology, preparing a metal mask by adopting an electron beam evaporation and stripping process, sequentially etching the polysilicon grating 4-1 and the lithium niobate grating 4-2 by adopting inductive coupling plasmas to form the polysilicon auxiliary reinforced thin film lithium niobate vertical coupling grating 4, removing the metal mask, wherein the metal mask is titanium with the thickness of 20 nm and nickel with the thickness of 180 nm, the etching depth of the polysilicon grating 4-1 is 300 nm, and the etching depth of the lithium niobate grating 4-2 is 300 nm;
s3, coating BCB with the thickness of 1000 nm on the upper surface of a silicon-based film lithium niobate substrate of which the film lithium niobate ridge optical waveguide 3 and the polysilicon auxiliary enhancement film lithium niobate vertical coupling grating 4 are finished by adopting a spin coating process as a bonding layer;
s4, transferring and bonding the stripped indium phosphide photoelectric detector epitaxial layer 8 onto the BCB bonding layer 5 by adopting a bonding process, wherein the bonding process is realized by baking and curing in an oven, the temperature is raised from room temperature to the highest baking temperature of 250 ℃, the heating time is 4 h, and the baking is carried out at the temperature of 250 ℃ for 2 h;
s5, preparing a pattern of the P contact layer table top 6-4 by adopting a photoetching development technology, and preparing the P contact layer table top 6-4 by adopting wet etching;
S6, preparing a figure of the absorption layer 6-3 by adopting a photoetching development technology, and preparing the absorption layer 6-3 by adopting wet etching;
s7, preparing an N contact layer table top 6-1 graph by adopting a photoetching development technology, and preparing an N contact layer table top 6-1 by adopting wet etching;
s8, preparing patterns of the N electrode 6-2 and the P electrode 6-5 by adopting a photoetching development technology, and preparing the N electrode metal 6-2 and the P electrode metal 6-5 by adopting an electroplating technology.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.

Claims (8)

1. A thin film lithium niobate-based integrated indium phosphide photoelectric detector is characterized in that: the solar cell comprises a silicon-based thin-film lithium niobate substrate, wherein the silicon-based thin-film lithium niobate substrate comprises a silicon substrate, an oxygen burying layer and a thin-film lithium niobate layer which are sequentially stacked from bottom to top, a thin-film lithium niobate ridge-shaped optical waveguide and a polysilicon auxiliary enhancement thin-film lithium niobate vertical coupling grating are arranged on the thin-film lithium niobate layer, a BCB bonding layer is arranged on the upper surface of the rest part of the thin-film lithium niobate layer, the upper surface of the thin-film lithium niobate ridge-shaped optical waveguide and the upper surface of the polysilicon auxiliary enhancement thin-film lithium niobate vertical coupling grating, a photoelectric detector is arranged on the BCB bonding layer right above the polysilicon auxiliary enhancement thin-film lithium niobate vertical coupling grating, the photoelectric detector is of a back incidence structure, and comprises an N contact layer table top, an absorption layer, a P contact layer table top and P electrode metal which are sequentially arranged from bottom to top, and N electrode metal is arranged on the N contact layer table top.
2. The thin film lithium niobate-based integrated indium phosphide photodetector as recited in claim 1, wherein: the polysilicon auxiliary reinforced film lithium niobate vertical coupling grating comprises a polysilicon grating and a lithium niobate grating which are arranged up and down, wherein the thickness of the polysilicon grating is 150-300 nm.
3. The thin film lithium niobate-based integrated indium phosphide photodetector as recited in claim 1, wherein: the thickness of the BCB bonding layer is 600-1000 nm.
4. A method of making a thin film lithium niobate-based integrated indium phosphide photodetector as recited in any one of claims 1-3, comprising the steps of:
s1, preparing a graph of a film lithium niobate ridge-shaped optical waveguide on a silicon-based film lithium niobate substrate by adopting a photoetching development technology, preparing a metal mask by adopting an electron beam evaporation and stripping process, etching the film lithium niobate ridge-shaped optical waveguide by adopting an inductively coupled plasma, and removing the metal mask;
s2, growing a layer of polysilicon on the film lithium niobate layer, preparing a pattern of the polysilicon auxiliary enhancement film lithium niobate vertical coupling grating by adopting a photoetching development technology, preparing a metal mask by adopting an electron beam evaporation and stripping process, etching the polysilicon auxiliary enhancement film lithium niobate vertical coupling grating by adopting an inductive coupling plasma, and removing the metal mask;
S3, coating BCB (binary coded decimal) serving as a bonding layer on the upper surface of a silicon-based thin film lithium niobate substrate for completing the vertical coupling grating of the thin film lithium niobate ridge optical waveguide and the polysilicon auxiliary enhancement thin film lithium niobate by adopting a spin coating process;
s4, transferring and bonding the stripped indium phosphide photoelectric detector epitaxial layer onto the BCB bonding layer by adopting a bonding process;
S5, preparing a P contact layer mesa pattern by adopting a photoetching development technology, and preparing a P contact layer mesa by adopting wet etching;
S6, preparing an absorption layer graph by adopting a photoetching development technology, and preparing an absorption layer by adopting wet corrosion;
S7, preparing an N contact layer mesa pattern by adopting a photoetching development technology, and preparing an N contact layer mesa by adopting wet etching;
And S8, preparing an N electrode pattern and a P electrode pattern by adopting a photoetching development technology, and preparing an N electrode metal and a P electrode metal by adopting an electron beam evaporation stripping or electroplating process.
5. The method for preparing the thin film lithium niobate-based integrated indium phosphide photoelectric detector as recited in claim 4, wherein the method comprises the following steps: the thickness of the thin film lithium niobate layer in the silicon-based thin film lithium niobate substrate is 600 nm, the etching depth of lithium niobate in the thin film lithium niobate ridge optical waveguide is 300 nm, and the etching depth of lithium niobate in the polysilicon auxiliary enhanced thin film lithium niobate vertical coupling grating is 300 nm.
6. The method for preparing the thin film lithium niobate-based integrated indium phosphide photoelectric detector as recited in claim 4, wherein the method comprises the following steps: the metal mask is a composite metal mask composed of titanium with the thickness of 20 nm and nickel with the thickness of 120-180: 180 nm.
7. The method for preparing the thin film lithium niobate-based integrated indium phosphide photoelectric detector as recited in claim 4, wherein the method comprises the following steps: the thickness of the polysilicon in the step S2 is 150-300 nm.
8. The method for preparing the thin film lithium niobate-based integrated indium phosphide photoelectric detector as recited in claim 4, wherein the method comprises the following steps: the bonding process is realized by baking and curing in an oven, the temperature is raised from room temperature to the highest baking temperature of 250 ℃, the heating time is 4h, and the bonding process is performed at the temperature of 250 ℃ for 1-2 h.
CN202311671026.4A 2023-12-07 2023-12-07 Thin film lithium niobate-based integrated indium phosphide photoelectric detector and preparation method thereof Pending CN118116985A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311671026.4A CN118116985A (en) 2023-12-07 2023-12-07 Thin film lithium niobate-based integrated indium phosphide photoelectric detector and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311671026.4A CN118116985A (en) 2023-12-07 2023-12-07 Thin film lithium niobate-based integrated indium phosphide photoelectric detector and preparation method thereof

Publications (1)

Publication Number Publication Date
CN118116985A true CN118116985A (en) 2024-05-31

Family

ID=91216912

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202311671026.4A Pending CN118116985A (en) 2023-12-07 2023-12-07 Thin film lithium niobate-based integrated indium phosphide photoelectric detector and preparation method thereof

Country Status (1)

Country Link
CN (1) CN118116985A (en)

Similar Documents

Publication Publication Date Title
CN104335088B (en) The manufacturing process of photonic circuit with active structure and passive structures
Izhaky et al. Development of CMOS-compatible integrated silicon photonics devices
CN103066148B (en) Hybrid integrated optoelectronic chip of silicon dioxide base on silicon and preparation method thereof
CN108132499A (en) Silicon waveguide spot converter based on multilayer polymer structure and preparation method thereof
CN104950478A (en) Active compound optical waveguide based on organic polymer material and manufacturing method thereof
CN113640913B (en) LNOI (Low noise optical) fundamental mode spot converter directly coupled with single-mode fiber
CN111474745B (en) Photoelectric monolithic integrated system based on multi-material system
CN110911961B (en) Tunable narrow linewidth laser
CN117727814A (en) Silicon-based thin film lithium niobate waveguide integrated indium phosphide photoelectric detector and preparation method thereof
CN112965166A (en) Z-cut lithium niobate tapered waveguide and preparation method thereof
CN115144965A (en) Lithium niobate thin film ridge waveguide end face coupler and preparation method thereof
CN113534337B (en) Processing method and structure of silicon photonic chip optical coupling structure
CN118116985A (en) Thin film lithium niobate-based integrated indium phosphide photoelectric detector and preparation method thereof
CN111176053B (en) Monolithic integrated optical analog-digital conversion system based on lithium niobate-silicon wafer and preparation method
CN115951454A (en) Lithium niobate-silicon nitride waveguide and laser heterogeneous integrated structure and preparation method thereof
CN115774300A (en) Hetero-integrated silicon-based thin film lithium niobate modulator and manufacturing method thereof
CN113948958B (en) Preparation method of integrated light source
CN112612078B (en) High-efficiency coupling waveguide based on GOI or SOI and preparation method thereof
CN114400504A (en) Preparation method of low-loss silicon nitride waveguide
JP3694630B2 (en) Optoelectric circuit board
CN113687530B (en) Silicon-based electro-optic modulator and preparation method thereof
CN111487791A (en) Integrated optical composite substrate
CN117908186A (en) Monolithic integrated high-speed modulation silicon-based optical chip and preparation method thereof
JP3559528B2 (en) Opto-electric circuit board
CN106887790A (en) Multi-wavelength silicon substrate hybrid integrated slot laser arrays and preparation method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination