CN118109900A - Preparation method of diamond aluminum nitride heterojunction epitaxial material - Google Patents
Preparation method of diamond aluminum nitride heterojunction epitaxial material Download PDFInfo
- Publication number
- CN118109900A CN118109900A CN202311710823.9A CN202311710823A CN118109900A CN 118109900 A CN118109900 A CN 118109900A CN 202311710823 A CN202311710823 A CN 202311710823A CN 118109900 A CN118109900 A CN 118109900A
- Authority
- CN
- China
- Prior art keywords
- diamond
- aluminum nitride
- diamond substrate
- hydrogen
- epitaxial material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 152
- 239000010432 diamond Substances 0.000 title claims abstract description 152
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 92
- 239000000463 material Substances 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 77
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 60
- 239000001257 hydrogen Substances 0.000 claims abstract description 60
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 57
- 239000013078 crystal Substances 0.000 claims abstract description 37
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 18
- 238000004544 sputter deposition Methods 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000005546 reactive sputtering Methods 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 3
- 150000002902 organometallic compounds Chemical class 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 9
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000000407 epitaxy Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a preparation method of a diamond aluminum nitride heterojunction epitaxial material, which comprises the following steps: and carrying out heat treatment on the diamond substrate with the monocrystal cube structure in the hydrogen atmosphere to obtain the diamond substrate with the surface repaired, wherein the diamond substrate has a 001 crystal orientation. And carrying out hydrogen treatment on the diamond substrate with the surface repaired in hydrogen plasma, and forming C-H bonds on the surface of the diamond substrate to obtain the diamond substrate after hydrogen treatment. Growing aluminum nitride with a cubic structure on the surface of the diamond substrate after hydrogen treatment, and preparing the diamond aluminum nitride heterojunction epitaxial material with the cubic structure. The invention adopts the 001 crystal orientation cubic structure diamond substrate to carry out epitaxial growth, and can prepare the cubic structure aluminum nitride to form the diamond aluminum nitride heterojunction. The prepared cubic diamond/cubic aluminum nitride heterojunction epitaxial material has high matching degree of heterogeneous crystal lattices and few heterojunction interface epitaxial defects, and the conductivity of the diamond aluminum nitride heterojunction epitaxial material is improved.
Description
Technical Field
The invention relates to the technical field of diamond semiconductor materials, in particular to a preparation method of a diamond aluminum nitride heterojunction epitaxial material.
Background
The diamond material has the advantages of wide band gap, high carrier mobility, high carrier saturation drift velocity, low dielectric constant, radiation resistance, corrosion resistance and the like, and can be used for preparing high-frequency power devices. However, due to the wide band gap of diamond, when the conventional doping technology realizes the conductive characteristic, the activation energy of doping elements (B, P, S and the like) is high, the activation rate of the doping elements is low, and the problems of low carrier concentration, low mobility, high sheet resistance and the like of the diamond semiconductor material are caused. How to realize a diamond material with high conductivity is one of the key bottleneck problems that currently limit the development of diamond semiconductor devices.
The aluminum nitride grows on the diamond to form a heterojunction, and a high-performance two-dimensional carrier conducting channel can be obtained in the diamond. However, because diamond and aluminum nitride are different semiconductor materials, the formed heterojunction interface has more defects, and the conductivity of the diamond aluminum nitride heterojunction is poor.
Disclosure of Invention
The invention provides a preparation method of a diamond aluminum nitride heterojunction epitaxial material, which aims to solve the problems of multiple epitaxial defects and poor conductivity of the existing diamond aluminum nitride heterojunction.
In a first aspect, the present invention provides a method for preparing a diamond aluminum nitride heterojunction epitaxial material, comprising: and carrying out heat treatment on the diamond substrate with the monocrystal cube structure in the hydrogen atmosphere to obtain the diamond substrate with the surface repaired, wherein the diamond substrate has a 001 crystal orientation. And carrying out hydrogen treatment on the diamond substrate with the surface repaired in hydrogen plasma to form C-H bonds on the surface of the diamond substrate, thereby obtaining the diamond substrate after hydrogen treatment. Growing aluminum nitride with a cubic structure on the surface of the diamond substrate after hydrogen treatment, and preparing the diamond aluminum nitride heterojunction epitaxial material with the cubic structure.
In one possible implementation manner, before the heat treatment of the diamond substrate with the single crystal cubic structure in the hydrogen atmosphere, the method further includes: grinding and polishing the diamond with the single crystal cubic structure to obtain the diamond substrate with the single crystal cubic structure with the 001 crystal orientation.
In one possible implementation, the growing the cubic structure of aluminum nitride on the surface of the diamond substrate after the hydrogen treatment includes: and placing the diamond substrate subjected to hydrogen treatment in metal organic compound chemical vapor deposition equipment, and heating to a preset epitaxial temperature. Introducing hydrogen, trimethylaluminum and ammonia at a preset epitaxial temperature, and epitaxially growing aluminum nitride with a cubic structure.
In one possible implementation, the growing the cubic structure of aluminum nitride on the surface of the diamond substrate after the hydrogen treatment includes: and placing the diamond substrate subjected to hydrogen treatment in a magnetron sputtering device, and heating to a preset sputtering temperature. And (3) introducing nitrogen at a preset sputtering temperature, sputtering an aluminum target, and growing the aluminum nitride with the cubic structure based on a reactive sputtering method.
In one possible implementation, the aluminum nitride has a thickness in the range of 1nm to 500nm.
In one possible implementation, the heat treatment is performed at a temperature in the range of 500 to 900 ℃ for a time in the range of 30 minutes to 10 hours.
In one possible implementation, the diamond substrate has a thickness in the range of 1 micron to 1 millimeter.
In one possible implementation, the hydrogen treatment device comprises a microwave plasma chemical vapor deposition device or a plasma enhanced chemical vapor deposition device.
In one possible implementation, the temperature of the hydrogen treatment is in the range of 400 to 900 ℃ for a period of 5 minutes to 60 minutes.
In one possible implementation, the surface roughness of the hydrogen treated diamond substrate is less than 1nm in the 5 μm by 5 μm range.
The invention provides a preparation method of a diamond aluminum nitride heterojunction epitaxial material, which comprises the following steps: and carrying out heat treatment on the diamond substrate with the monocrystal cube structure in the hydrogen atmosphere to obtain the diamond substrate with the surface repaired, wherein the diamond substrate has a 001 crystal orientation. And carrying out hydrogen treatment on the diamond substrate with the surface repaired in hydrogen plasma, and forming C-H bonds on the surface of the diamond substrate to obtain the diamond substrate after hydrogen treatment. Growing aluminum nitride with a cubic structure on the surface of the diamond substrate after hydrogen treatment, and preparing the diamond aluminum nitride heterojunction epitaxial material with the cubic structure. According to the invention, on one hand, a 001 crystal orientation cubic structure diamond substrate is adopted for epitaxial growth, and cubic structure aluminum nitride can be prepared, so that a diamond aluminum nitride heterojunction is formed. On the other hand, by first carrying out hydrogen treatment on the cubic structure diamond and then growing aluminum nitride, the nucleation energy of the aluminum nitride is reduced, and the cubic structure aluminum nitride is easy to grow. The prepared cubic diamond/cubic aluminum nitride heterojunction epitaxial material has high matching degree of heterogeneous crystal lattices and few heterojunction interface epitaxial defects, and the conductivity of the diamond aluminum nitride heterojunction epitaxial material is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic cross-sectional structure of a diamond aluminum nitride heterojunction epitaxial material;
FIG. 2 is a schematic diagram of the structure of 111 crystal orientation diamond and 001 crystal orientation hexagonal aluminum nitride atoms;
Fig. 3 is a flowchart of an implementation of a method for preparing a diamond aluminum nitride heterojunction epitaxial material according to an embodiment of the present invention;
Fig. 4 is a schematic diagram of a hetero-junction atomic structure of diamond aluminum nitride according to an embodiment of the present invention.
Detailed Description
In order to make the present solution better understood by those skilled in the art, the technical solution in the present solution embodiment will be clearly described below with reference to the accompanying drawings in the present solution embodiment, and it is obvious that the described embodiment is an embodiment of a part of the present solution, but not all embodiments. All other embodiments, based on the embodiments in this solution, which a person of ordinary skill in the art would obtain without inventive faculty, shall fall within the scope of protection of this solution.
The term "comprising" in the description of the present solution and the claims and in the above-mentioned figures, as well as any other variants, means "including but not limited to", intended to cover a non-exclusive inclusion, and not limited to only the examples listed herein. Furthermore, the terms "first" and "second," etc. are used for distinguishing between different objects and not for describing a particular sequential order.
The implementation of the invention is described in detail below with reference to the specific drawings:
fig. 1 is a schematic cross-sectional structure of a diamond aluminum nitride heterojunction epitaxial material. Referring to fig. 1, the lower layer is diamond and the upper layer is aluminum nitride. The diamond aluminum nitride heterojunction forms a high-performance two-dimensional carrier conduction channel. However, because diamond and aluminum nitride are different semiconductor materials, the formed heterojunction interface has more defects, and the conductivity of the diamond aluminum nitride heterojunction is poor.
The inventor discovers that the large lattice mismatch degree is a main reason for more heterojunction interface defects in the research and development process. Fig. 2 is a schematic diagram of the structure of 111 crystal orientation diamond and 001 crystal orientation hexagonal aluminum nitride atoms. Referring to fig. 2, the lattice mismatch between hexagonal aluminum nitride and diamond is large, for example, the lattice mismatch between 111 diamond and 001 hexagonal aluminum nitride is 25%. The larger lattice mismatch can cause poor quality of the epitaxially grown aluminum nitride crystal on the diamond, and a large number of defects are generated at the heterojunction interface, so that the quality of the heterojunction and the performance of a conductive channel are seriously affected.
According to the preparation method of the diamond aluminum nitride heterojunction epitaxial material, provided by the embodiment of the invention, the preparation of the aluminum nitride with the cubic structure is realized on the diamond substrate with the cubic structure, so that the lattice matching degree is improved, the heterojunction interface epitaxial defect is reduced, and the conductivity of the diamond aluminum nitride heterojunction epitaxial material is improved.
Fig. 3 is a flowchart of a preparation method of a diamond aluminum nitride heterojunction epitaxial material according to an embodiment of the present invention. Referring to fig. 3, the preparation method includes:
In step 101, heat treatment is performed on the diamond substrate with the single crystal cubic structure in the hydrogen atmosphere, so as to obtain the diamond substrate with the surface repaired, wherein the diamond substrate has a 001 crystal orientation.
Illustratively, the diamond substrate has a thickness in the range of 1 micron to 1 millimeter.
Illustratively, the heat treatment is carried out at a temperature in the range of 500 to 900 ℃ for a time in the range of 30 minutes to 10 hours.
In some embodiments, the diamond substrate of single crystal cubic structure may also be heat treated under ultra-high vacuum conditions.
The effect of heat treatment on the diamond substrate is to repair the damaged layer on the surface of the diamond substrate, so as to obtain the diamond substrate with flat surface, no scratch and no stress damage.
In one possible implementation, before the heat treatment of the diamond substrate of the single crystal cubic structure in the hydrogen atmosphere, the method further includes: grinding and polishing the diamond with the single crystal cubic structure to obtain the diamond substrate with the single crystal cubic structure with the 001 crystal orientation.
Illustratively, the milling process is mechanical milling.
The polishing process is, for example, mechanical polishing or chemical mechanical polishing.
In some embodiments, after grinding and polishing the diamond of the single crystal cubic structure, cleaning the polished diamond substrate is further included.
In step 102, hydrogen treatment is performed on the diamond substrate with the surface repaired in hydrogen plasma, and C-H bonds are formed on the surface of the diamond substrate, so that the diamond substrate with the surface repaired is obtained.
The apparatus for performing hydrogen treatment is an apparatus capable of generating hydrogen plasma.
Exemplary hydrogen processing equipment includes microwave plasma chemical vapor deposition equipment or plasma enhanced chemical vapor deposition equipment.
In some embodiments, a pre-vacuum is required prior to the hydrogen plasma treatment.
The hydrogen treatment is typically carried out at a temperature in the range of 400 to 900 c for a time in the range of 5 minutes to 60 minutes.
After the formation of the c—h bond, the surface of the diamond substrate was not significantly roughened.
Illustratively, the surface roughness of the hydrogen treated diamond substrate is less than 1nm in the 5 μm by 5 μm range.
In step 103, growing aluminum nitride with a cubic structure on the surface of the diamond substrate after hydrogen treatment, and preparing the diamond aluminum nitride heterojunction epitaxial material with the cubic structure.
In some embodiments, aluminum nitride of 001 crystal orientation cubic structure is prepared by growing on a diamond substrate of 001 crystal orientation cubic structure.
The thickness of aluminum nitride is illustratively in the range of 1nm to 500nm.
In one possible implementation, growing cubic structured aluminum nitride on the surface of the hydrogen treated diamond substrate comprises:
in step 201, the hydrogen treated diamond substrate is placed in a metal organic chemical vapor deposition apparatus and heated to a preset epitaxy temperature.
The preset epitaxy temperature is, for example, in the range of 900 to 1200 ℃.
Illustratively, the temperature is raised to a preset epitaxial temperature under a hydrogen atmosphere.
In step 202, hydrogen, trimethylaluminum and ammonia are introduced at a preset epitaxy temperature, and aluminum nitride with a cubic structure is epitaxially grown.
In one possible implementation, growing cubic structured aluminum nitride on the surface of the hydrogen treated diamond substrate comprises:
In step 301, the hydrogen treated diamond substrate is placed in a magnetron sputtering apparatus and heated to a preset sputtering temperature.
The preset sputtering temperature is, for example, in the range of 300 to 800 ℃.
Illustratively, an aluminum target is disposed within the magnetron sputtering apparatus.
In step 302, nitrogen is introduced at a preset sputtering temperature to sputter an aluminum target, and cubic aluminum nitride is grown based on a reactive sputtering method.
Illustratively, at a preset sputtering temperature, the introduced nitrogen reacts with sputtered aluminum, deposits on the diamond substrate, and grows to obtain cubic aluminum nitride.
Fig. 4 is a schematic diagram of a hetero-junction atomic structure of diamond aluminum nitride according to an embodiment of the present invention. Fig. 4 is a schematic diagram of the atomic structures of a 001 oriented cubic diamond and a 001 oriented cubic aluminum nitride. Referring to fig. 4, the lattice mismatch of 001 diamond and 001 cubic aluminum nitride was 13.9%. The diamond is of a cubic structure, aluminum nitride of the cubic structure and the diamond have better lattice matching, and aluminum nitride of the cubic structure grows on the cubic diamond with better lattice matching, so that aluminum nitride with better crystal quality is easy to obtain.
According to the embodiment of the invention, on one hand, the 001 crystal orientation cubic structure diamond substrate is adopted for epitaxial growth, so that the cubic structure aluminum nitride can be prepared, and the diamond aluminum nitride heterojunction is formed. On the other hand, by first carrying out hydrogen treatment on the cubic structure diamond and then growing aluminum nitride, the nucleation energy of the aluminum nitride is reduced, and the cubic structure aluminum nitride is easy to grow. The prepared cubic diamond/cubic aluminum nitride heterojunction epitaxial material has high matching degree of heterogeneous crystal lattices and few heterojunction interface epitaxial defects, and the conductivity of the diamond aluminum nitride heterojunction epitaxial material is improved.
According to the embodiment of the invention, the diamond is in a cubic structure, the aluminum nitride material with the cubic structure is epitaxially grown on the diamond to form a lattice-matched heterostructure, and a high-performance two-dimensional carrier conducting channel can be obtained in the diamond by utilizing the energy band step of the heterostructure and the interface bonding difference, and the conducting channel is expected to have excellent characteristics of high mobility, low sheet resistance and the like, so that a foundation is laid for realizing a high-performance diamond field effect transistor device.
A specific example is given below to further illustrate the above preparation method:
In the first step, a 001 crystal orientation single crystal diamond substrate is ground, polished and cleaned. And (3) carrying out heat treatment at 800 ℃ for 1 hour in a hydrogen atmosphere, and repairing the surface damage layer to obtain the monocrystalline diamond substrate with flat surface, no scratch and no stress damage. The diamond substrate thickness was 500 μm.
And secondly, placing the single crystal diamond substrate in MPCVD (microwave plasma chemical vapor deposition) equipment, performing hydrogen plasma treatment at 700 ℃ for 10 minutes, and forming C-H bonds on the surface of the diamond substrate.
And thirdly, placing the diamond substrate with the surface of C-H bond in MOCVD (metal organic chemical vapor deposition) equipment, reacting trimethylaluminum with ammonia gas at 1100 ℃ in hydrogen atmosphere, and growing aluminum nitride on the diamond, wherein the thickness of the aluminum nitride is 20nm.
The above embodiments are only for illustrating the technical solution of the present invention, and are not limiting. Although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. The preparation method of the diamond aluminum nitride heterojunction epitaxial material is characterized by comprising the following steps of:
carrying out heat treatment on the diamond substrate with the monocrystal cube structure in a hydrogen atmosphere to obtain a diamond substrate with a repaired surface, wherein the diamond substrate has a 001 crystal orientation;
carrying out hydrogen treatment on the diamond substrate with the surface repaired in hydrogen plasma, and forming C-H bonds on the surface of the diamond substrate to obtain the diamond substrate after hydrogen treatment;
growing aluminum nitride with a cubic structure on the surface of the diamond substrate after hydrogen treatment, and preparing the diamond aluminum nitride heterojunction epitaxial material with the cubic structure.
2. The method for preparing a diamond aluminum nitride heterojunction epitaxial material according to claim 1, wherein before the diamond substrate of single crystal cubic structure is subjected to heat treatment under hydrogen atmosphere, the method further comprises:
grinding and polishing the diamond with the single crystal cubic structure to obtain the diamond substrate with the single crystal cubic structure with the 001 crystal orientation.
3. The method of preparing a diamond aluminum nitride heterojunction epitaxial material of claim 1, wherein growing the cubic structure of aluminum nitride on the surface of the hydrogen treated diamond substrate comprises:
Placing the diamond substrate subjected to hydrogen treatment into metal organic compound chemical vapor deposition equipment, and heating to a preset epitaxial temperature;
introducing hydrogen, trimethylaluminum and ammonia at a preset epitaxial temperature, and epitaxially growing aluminum nitride with a cubic structure.
4. The method of preparing a diamond aluminum nitride heterojunction epitaxial material of claim 1, wherein growing the cubic structure of aluminum nitride on the surface of the hydrogen treated diamond substrate comprises:
Placing the diamond substrate subjected to hydrogen treatment in magnetron sputtering equipment, and heating to a preset sputtering temperature;
And (3) introducing nitrogen at a preset sputtering temperature, sputtering an aluminum target, and growing the aluminum nitride with the cubic structure based on a reactive sputtering method.
5. The method of preparing a diamond aluminum nitride heterojunction epitaxial material of claim 1, wherein the thickness of the aluminum nitride is in the range of 1nm to 500nm.
6. The method of preparing a diamond aluminum nitride heterojunction epitaxial material of claim 1, wherein the heat treatment is carried out at a temperature ranging from 500 to 900 ℃ for a time ranging from 30 minutes to 10 hours.
7. The method of preparing a diamond aluminum nitride heterojunction epitaxial material of claim 1, wherein the thickness of the diamond substrate ranges from 1 micron to 1 millimeter.
8. The method of preparing a diamond aluminum nitride heterojunction epitaxial material of claim 1, wherein the hydrogen treatment device comprises a microwave plasma chemical vapor deposition device or a plasma enhanced chemical vapor deposition device.
9. The method of preparing a diamond aluminum nitride heterojunction epitaxial material of claim 5, wherein the hydrogen treatment is performed at a temperature in the range of 400 to 900 ℃ for a time in the range of 5 minutes to 60 minutes.
10. The method of preparing a diamond aluminum nitride heterojunction epitaxial material of claim 1, wherein the surface roughness of the hydrogen treated diamond substrate is less than 1nm in the range of 5 μm by 5 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311710823.9A CN118109900A (en) | 2023-12-13 | 2023-12-13 | Preparation method of diamond aluminum nitride heterojunction epitaxial material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311710823.9A CN118109900A (en) | 2023-12-13 | 2023-12-13 | Preparation method of diamond aluminum nitride heterojunction epitaxial material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118109900A true CN118109900A (en) | 2024-05-31 |
Family
ID=91216936
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311710823.9A Pending CN118109900A (en) | 2023-12-13 | 2023-12-13 | Preparation method of diamond aluminum nitride heterojunction epitaxial material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118109900A (en) |
-
2023
- 2023-12-13 CN CN202311710823.9A patent/CN118109900A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11031240B2 (en) | Method for growing gallium nitride based on graphene and magnetron sputtered aluminum nitride | |
| CN105655238A (en) | Silica-based gallium nitride growing method based on graphene and magnetron sputtering aluminum nitride | |
| JP2023525597A (en) | Nitride epitaxial wafer, manufacturing method thereof, and semiconductor device | |
| CN102623521A (en) | Method for preparing cuprous oxide film | |
| CN116053120B (en) | Nitride epitaxial structure and preparation method and application thereof | |
| CN108428618B (en) | Gallium nitride growth method based on graphene insertion layer structure | |
| CN104867818A (en) | Method for reducing defects of silicon carbide epitaxial material | |
| CN114899099A (en) | Epitaxial method for growing gallium nitride high electron mobility transistor on diamond substrate | |
| CN115763221A (en) | Composite substrate, preparation method thereof and semiconductor device | |
| CN113130296B (en) | Method for growing gallium nitride on hexagonal boron nitride | |
| CN114420563A (en) | Diamond-based nitride semiconductor device and preparation method thereof | |
| CN114664642A (en) | HEMT structure based on III-group nitride homoepitaxy, and preparation method and application thereof | |
| CN111477534A (en) | Aluminum nitride template and preparation method thereof | |
| CN110828291A (en) | GaN/AlGaN heterojunction material based on single crystal diamond substrate and preparation method thereof | |
| CN116666196A (en) | kappa-Ga without rotational domains 2 O 3 Film and kappa- (Al) x Ga 1-x ) 2 O 3 /κ-Ga 2 O 3 Preparation method of heterojunction | |
| CN105006427B (en) | A kind of method that high-quality gallium nitride epitaxial structure is grown using low temperature buffer layer | |
| CN116590795A (en) | Method for growing monocrystalline GaN self-supporting substrate by using ceramic substrate | |
| CN110791805A (en) | Substrate, epitaxial wafer and growth method thereof | |
| CN114717657B (en) | Method for growing nickel oxide monocrystal film based on plasma-assisted laser molecular beam epitaxy | |
| CN118109900A (en) | Preparation method of diamond aluminum nitride heterojunction epitaxial material | |
| CN115938940A (en) | Boron nitride Van der Waals epitaxial gallium nitride microwave material and growth method | |
| CN116288722A (en) | GaN epitaxial method of diamond substrate | |
| CN112750689A (en) | Gallium nitride material with gallium polar surface and homoepitaxial growth method | |
| CN112713082A (en) | Substrate for preparing gallium nitride radio frequency device, preparation method of substrate and gallium nitride radio frequency device | |
| CN110670138A (en) | Composite seed crystal for aluminum nitride single crystal growth and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination |