CN118104414A - 摄像装置 - Google Patents

摄像装置 Download PDF

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Publication number
CN118104414A
CN118104414A CN202280068405.1A CN202280068405A CN118104414A CN 118104414 A CN118104414 A CN 118104414A CN 202280068405 A CN202280068405 A CN 202280068405A CN 118104414 A CN118104414 A CN 118104414A
Authority
CN
China
Prior art keywords
electrode
semiconductor material
photoelectric conversion
injection layer
charge injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280068405.1A
Other languages
English (en)
Chinese (zh)
Inventor
光石杜朗
横山孝理
饭岛浩章
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of CN118104414A publication Critical patent/CN118104414A/zh
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30Devices controlled by radiation
    • H10K39/32Organic image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/60Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • H10K30/84Layers having high charge carrier mobility
    • H10K30/85Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
CN202280068405.1A 2021-10-26 2022-09-27 摄像装置 Pending CN118104414A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021174266 2021-10-26
JP2021-174266 2021-10-26
PCT/JP2022/035984 WO2023074230A1 (ja) 2021-10-26 2022-09-27 撮像装置

Publications (1)

Publication Number Publication Date
CN118104414A true CN118104414A (zh) 2024-05-28

Family

ID=86159769

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280068405.1A Pending CN118104414A (zh) 2021-10-26 2022-09-27 摄像装置

Country Status (4)

Country Link
US (1) US20240276744A1 (https=)
JP (1) JPWO2023074230A1 (https=)
CN (1) CN118104414A (https=)
WO (1) WO2023074230A1 (https=)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6972431B2 (en) * 2003-11-26 2005-12-06 Trustees Of Princeton University Multilayer organic photodetectors with improved performance
JP5427349B2 (ja) * 2007-10-18 2014-02-26 富士フイルム株式会社 固体撮像素子
TWI380490B (en) * 2009-05-05 2012-12-21 Univ Nat Chiao Tung Organic photosensitive photoelectric device
JP6567276B2 (ja) * 2014-05-13 2019-08-28 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および電子機器
JP2016225456A (ja) * 2015-05-29 2016-12-28 パナソニックIpマネジメント株式会社 撮像装置および光電変換膜の製造方法
KR102586250B1 (ko) * 2015-11-02 2023-10-10 소니 세미컨덕터 솔루션즈 가부시키가이샤 광전변환 소자 및 고체 촬상 장치
JP6834400B2 (ja) * 2016-11-22 2021-02-24 ソニー株式会社 撮像素子、積層型撮像素子、撮像装置及び電子装置
GB2575327A (en) * 2018-07-06 2020-01-08 Sumitomo Chemical Co Organic photodetector
EP3923361A4 (en) * 2019-02-08 2022-04-06 Panasonic Intellectual Property Management Co., Ltd. PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE

Also Published As

Publication number Publication date
JPWO2023074230A1 (https=) 2023-05-04
US20240276744A1 (en) 2024-08-15
WO2023074230A1 (ja) 2023-05-04

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