CN118087025A - Growth equipment and method for gallium oxide single crystal rod - Google Patents
Growth equipment and method for gallium oxide single crystal rod Download PDFInfo
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- CN118087025A CN118087025A CN202410058436.XA CN202410058436A CN118087025A CN 118087025 A CN118087025 A CN 118087025A CN 202410058436 A CN202410058436 A CN 202410058436A CN 118087025 A CN118087025 A CN 118087025A
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- Prior art keywords
- gallium oxide
- crucible
- lifting
- seed
- rod
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 79
- 239000013078 crystal Substances 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 20
- 230000007246 mechanism Effects 0.000 claims abstract description 74
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 42
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims abstract description 42
- 238000007599 discharging Methods 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 239000000843 powder Substances 0.000 claims abstract description 12
- 238000009434 installation Methods 0.000 claims abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 44
- 229910052760 oxygen Inorganic materials 0.000 claims description 44
- 239000001301 oxygen Substances 0.000 claims description 44
- 239000000155 melt Substances 0.000 claims description 13
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 239000000498 cooling water Substances 0.000 claims description 5
- 238000010899 nucleation Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 238000002425 crystallisation Methods 0.000 abstract description 5
- 230000008025 crystallization Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000012768 molten material Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a growth device and a growth method of a gallium oxide single crystal rod, wherein the growth device comprises: the device comprises a pressure mechanism, a heating mechanism, a gallium oxide melt discharging mechanism, a lifting and rotating mechanism and a seed crystal mounting mechanism. The pressure mechanism has a pressure chamber for controlling the pressure in the pressure chamber. The heating mechanism is arranged in the pressure cavity and is used for controlling the temperature in the pressure cavity. The gallium oxide melt discharging mechanism is arranged in the pressure cavity and is used for outputting gallium oxide melt and controlling the output quantity of the gallium oxide melt. The lifting and rotating mechanism is used for controlling the lifting and rotating of the gallium oxide powder loading mechanism. The seed crystal installation mechanism is used for installing seed crystals and controlling the seed crystals to be contacted with the gallium oxide melt. The equipment can control the uniformity of a temperature field and the growth temperature gradient through the rotation and the lifting of the iridium crucible, so that the crystallization rate is greatly improved, and the quality of gallium oxide single crystals is greatly improved.
Description
Technical Field
The invention relates to the field of gallium oxide single crystal rod growth, in particular to a gallium oxide single crystal rod growth device and a gallium oxide single crystal rod growth method.
Background
In recent decades, beta-gallium oxide (beta-Ga 2O3) materials and device technologies have been rapidly developed, and the forbidden band width EG=4.9 eV, far exceeds silicon carbide (about 3.4 eV), gallium nitride (about 3.3 eV) and silicon (1.1 eV), and the materials and the devices have good conductive performance and luminous characteristics and very strong electronic, optical and thermal performances. It has a high refractive index, a tunable raman scattering response, a low leakage current and epitaxial properties that are very stable. It also has excellent small ripple dynamic characteristics and high emission efficiency. In addition, it has high compression energy and selenium antioxidant capacity.
The application fields of gallium oxide (Ga 2O3) single crystals mainly include: laser devices, accelerators and radar systems, sensors, visual image sensors, antennas, filters, and on-chip circuitry. In addition, it is also widely used in optical technology-it can be used to manufacture deformable mirrors, BK7 lenses, video lens controllers, and high performance imaging systems.
In the future, gallium oxide (Ga 2O3) will be used as a high-performance, high-reliability semiconductor material to replace silicon (Si) and other semiconductor materials to realize the design of low-power electronic circuits. It will help miniaturize electronic devices to meet the increasing demands of people for small electronic and consumer electronic products. In the future, gallium oxide (Ga 2O3) will also be largely applied to these fields with the development of sensors, filters, circuit designs and visual image imaging technologies. Therefore, gallium oxide (Ga 2O3) is expected to play an important role in the future and brings about a great development opportunity.
The existing gallium oxide monocrystal growing process mainly comprises a guided mode method, a Czochralski method and the like. The growth methods have low crystallization rate, a large amount of oxygen is decomposed from the molten material, the proportion of gallium and oxygen in the molten material is unbalanced, the molten material is largely volatilized, and the volatile matters are adhered to seed crystals, so that the growth of crystals is greatly influenced.
Disclosure of Invention
The invention provides a growth device and a growth method of a gallium oxide single crystal rod, which can improve the crystallization rate and the quality of single crystals.
An embodiment of the present invention provides a growth apparatus for gallium oxide single crystal rods, including: the device comprises a pressure mechanism, a heating mechanism, a gallium oxide melt discharging mechanism, a lifting and rotating mechanism and a seed crystal mounting mechanism. The pressure mechanism has a pressure chamber for controlling the pressure in the pressure chamber. The heating mechanism is arranged in the pressure cavity and is used for controlling the temperature in the pressure cavity. The gallium oxide melt discharging mechanism is arranged in the pressure cavity and is used for outputting gallium oxide melt and controlling the output quantity of the gallium oxide melt. The lifting and rotating mechanism is used for controlling the lifting and rotating of the gallium oxide powder loading mechanism. The seed crystal installation mechanism is used for installing seed crystals and controlling the seed crystals to be contacted with the gallium oxide melt.
In some of these embodiments, the pressure mechanism comprises: the pressure cavity, circulating cooling water pipe and base. The pressure chamber defines a pressure chamber. The circulating cooling water pipe is coiled on the peripheral wall of the pressure cavity. The base is supported at the bottom of the pressure cavity.
In some of these embodiments, the pressure mechanism further comprises: and an observation window. The observation window is arranged at the top of the pressure cavity.
In some of these embodiments, the heating mechanism comprises: a heater. The heater is a vertically arranged cylindrical structure.
In some of these embodiments, the gallium oxide melt tapping mechanism comprises: the iridium crucible, the melt discharging mold, the crucible cover, the oxygen pipe and the oxygen control structure. The melt discharging mould is provided with an output pipe and a mould platform. The lower end of the output pipe extends into the iridium crucible. The mould platform is arranged above the output pipe, and the mould platform expands outwards gradually from the peripheral wall of the upper end of the output pipe. The crucible cover is arranged at the top crucible opening of the iridium crucible. The crucible cover is supported at the periphery of the output pipe and the bottom of the die platform. The crucible cover has an air inlet. The oxygen pipe passes the roof of pressure cavity, and the lower extreme of oxygen pipe is installed in air inlet department, and the upper end setting of oxygen pipe is in the top of pressure cavity. The oxygen control structure is arranged on the oxygen pipe and controls the oxygen flow in the oxygen pipe.
In some of these embodiments, the mold platform is disposed above the heating mechanism.
In some of these embodiments, the lower end of the delivery tube has a plurality of protrusions, each protrusion being disposed around the centerline of the delivery tube, the protrusions abutting the bottom wall of the iridium crucible.
In some of these embodiments, the lifting and rotating mechanism comprises: the crucible lifting control device comprises a support bracket, a crucible rotation control motor and a crucible lifting control motor. The support bracket is provided with a support platform and a support rod. The supporting platform is provided with a gallium oxide melt discharging mechanism. The bracing piece passes the diapire of pressure cavity, and the upper end of bracing piece supports in supporting platform's bottom, and the lower extreme of bracing piece sets up in the below of pressure cavity. The output end of the crucible rotation control motor is connected with the lower end of the supporting rod. The crucible lifting control motor controls the lifting of the supporting bracket.
In some of these embodiments, the seed crystal mounting mechanism includes: seed rod, seed rod rotation control motor and seed rod lift control motor. The seed rod passes the roof of pressure cavity, and the lower extreme of seed rod sets up in the top of mould platform, and the lower extreme of seed rod supplies seed crystal installation, and the upper end of seed rod sets up in the top of pressure cavity. The output end of the seed rod rotation control motor is connected with the lower end of the seed rod. The seed rod lifting control motor controls the lifting of the seed rod rotation control motor.
The embodiment of the invention also provides a growth method of the gallium oxide single crystal rod, which comprises the following steps: and (5) charging gallium oxide powder into the iridium crucible. And installing a melt discharging mould into the iridium crucible, and covering a top crucible opening of the iridium crucible with a crucible cover. And placing the iridium crucible on a supporting platform. The position and the temperature field of the iridium crucible are stable through the crucible rotation control motor and the crucible lifting control motor. A seed crystal is mounted to the seed rod. An oxygen tube is installed into the gas inlet of the crucible cover. And (3) raising the temperature of the heater to 1900 ℃, and controlling the gallium oxide melt on the die platform through the oxygen control structure after the gallium oxide powder is melted, so as to keep the oxygen flow unchanged. The seed rod is lowered to the upper part of the die platform through the crucible lifting control motor and is contacted with the gallium oxide melt, and gallium oxide single crystal growth is started. In the seeding process, the rotation speed of the seed rod is 7-10rad/min, the lifting speed of the seed rod is 15-20mm/h, in the shouldering growth process, the rotation speed of the seed rod is adjusted to 10-20rad/min, the lifting speed of the seed rod is adjusted to 30-40mm/h, and the cooling speed is 3 ℃/h.
According to an embodiment of the present invention, there is provided a growth apparatus for gallium oxide single crystal rods, including: the device comprises a pressure mechanism, a heating mechanism, a gallium oxide melt discharging mechanism, a lifting and rotating mechanism and a seed crystal mounting mechanism. The pressure mechanism has a pressure chamber for controlling the pressure in the pressure chamber. The heating mechanism is arranged in the pressure cavity and is used for controlling the temperature in the pressure cavity. The gallium oxide melt discharging mechanism is arranged in the pressure cavity and is used for outputting gallium oxide melt and controlling the output quantity of the gallium oxide melt. The lifting and rotating mechanism is used for controlling the lifting and rotating of the gallium oxide powder loading mechanism. The seed crystal installation mechanism is used for installing seed crystals and controlling the seed crystals to be contacted with the gallium oxide melt. The equipment can control the uniformity and growth temperature gradient of a temperature field through the rotation and the lifting of the iridium crucible, ensure the balance and the stability of the temperature field, reduce the defects of crystal twinning, oxygen vacancies and the like, ensure that gallium oxide grows on seed crystals stably, slowly and uniformly, greatly improve the crystallization rate, inhibit the decomposition and the volatilization of gallium oxide and greatly improve the quality of gallium oxide single crystals.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are necessary for the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention and that other drawings may be obtained from them without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural view of a growth apparatus in an embodiment of the present invention;
FIG. 2 is a top view of a melt-ejection die in an embodiment of the invention;
FIG. 3 is a cross-sectional view of a melt-ejection die in an embodiment of the invention;
Fig. 4 is a schematic structural view of a crucible cover in an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Referring to fig. 1-4, an embodiment of the present invention provides a gallium oxide single crystal rod growth apparatus 1 comprising a pressure mechanism 11, a heating mechanism 12, a gallium oxide melt discharge mechanism 13, a lifting and rotating mechanism 14, and a seed crystal mounting mechanism 15.
The pressure mechanism 11 has a pressure chamber, and the pressure mechanism 11 is used for controlling the pressure in the pressure chamber. The pressure mechanism 11 includes: a pressure chamber 111, a circulating cooling water pipe (not shown), a base 112, and an observation window 113.
The pressure chamber 111 defines a pressure chamber. The inner wall of the pressure cavity is of a cylindrical structure.
The circulating cooling water pipe is coiled around the outer peripheral wall of the pressure chamber 111.
The base 112 includes at least two, such as two. Each base 112 is supported at the bottom of the pressure chamber 111 such that the bottom of the pressure chamber 111 is disposed above ground. The seats 112 are uniformly arranged around the center line of the pressure chamber 111. Requiring a high level of the entire base 112.
An observation window 113 is provided on the top of the pressure chamber 111 to facilitate observation of the growth of the gallium oxide single crystal rod 3.
A heating mechanism 12 is provided in the pressure chamber, the heating mechanism 12 being used to control the temperature in the pressure chamber. The heating mechanism 12 includes: a heater 121.
The heater 121 is a vertically disposed cylindrical structure. A heater 121 is disposed in the pressure chamber. The center line of the heater 121 coincides with the center line of the pressure chamber. The heater 121 is an intermediate frequency induction heater 121.
The gallium oxide melt discharging mechanism 13 is arranged in the pressure cavity, and the gallium oxide melt discharging mechanism 13 is used for outputting the gallium oxide melt 2 and controlling the output quantity of the gallium oxide melt 2. The gallium oxide melt discharging mechanism 13 comprises: an iridium crucible 131, a melt discharge die 132, a crucible cover 133, an oxygen tube 134 and an oxygen control structure 135.
The iridium crucible 131 has a cylindrical structure with a closed bottom and is arranged vertically. An iridium crucible 131 is provided in the heater 121. The center line of the iridium crucible 131 coincides with the center line of the heater 121. The top crucible mouth of the iridium crucible 131 is disposed slightly lower than the top of the heater 121 or is disposed in parallel with the top of the heater 121.
The melt discharge die 132 is iridium. Melt-ejection die 132 has an output tube 1321 and a die platform 1322. The output tube 1321 is a vertically arranged circular tube structure. The lower end of the output tube 1321 extends into the iridium crucible 131. The center line of the output tube 1321 coincides with the center line of the iridium crucible 131. The lower end of the output tube 1321 has protrusions 1323, the protrusions 1323 include a plurality of protrusions 1323, each protrusion 1323 is disposed around the center line of the output tube 1321, and the protrusions 1323 collide with the bottom wall of the iridium crucible 131, so that the output tube 1321 communicates with the iridium crucible 131 through the gaps between the protrusions 1323. The upper end of the output pipe 1321 is disposed slightly higher than the top of the heater 121 or is disposed flush with the top of the heater 121. The mold platform 1322 is disposed above the output pipe 1321, and the mold platform 1322 expands gradually outward from the outer peripheral wall of the upper end of the output pipe 1321. The mold platform 1322 is also disposed above the heater 121, that is, the bottom of the mold platform 1322 is disposed slightly above the top of the heater 121 or is disposed flush with the top of the heater 121.
The crucible cover 133 has a circular ring-shaped structure. Crucible cap 133 is an iridium crucible cap having a thickness of about 3 mm. The crucible cover 133 includes two cover bodies 1331, wherein the two cover bodies 1331 are in a fan-shaped plate structure, and the two cover bodies 1331 are in butt joint to form the crucible cover 133. The crucible cover 133 is covered on the top crucible opening of the iridium crucible 131, and the center line of the crucible cover 133 coincides with the center line of the iridium crucible 131. The crucible cover 133 is supported on the outer periphery of the output tube 1321 and the bottom of the mold platform 1322, that is, the inner peripheral wall of the central opening of the crucible cover 133 is attached to the outer peripheral wall of the output tube 1321, and the upper end surface of the central opening is abutted against the bottom of the mold platform 1322. The crucible cover 133 is welded to the melt discharge die 132. The crucible cover 133 has an air inlet, and an air inlet oxygen supply pipe 134 is installed.
The oxygen pipe 134 is a vertically arranged circular pipe structure. Oxygen tube 134 is a high temperature resistant zirconia material. The oxygen pipe 134 passes through the top wall of the pressure cavity 111, the lower end of the oxygen pipe 134 is installed at the air inlet, and the upper end of the oxygen pipe 134 is arranged above the pressure cavity 111.
An oxygen control structure 135 is installed on the oxygen pipe 134, and the oxygen control structure 135 controls the flow of oxygen in the oxygen pipe 134.
The lifting and rotating mechanism 14 is used to control the lifting and rotation of the gallium oxide powder loading mechanism. The lifting and rotating mechanism 14 includes: a support bracket 141, a crucible rotation control motor 141, and a crucible elevation control motor 142.
The support bracket 141 has a support platform 1411 and a support rod 1412. The support platform 1411 is a horizontally disposed plate-like structure. Support platform 1411 is provided for iridium crucible 131. The support rod 1412 passes through the bottom wall of the pressure chamber 111, the upper end of the support rod 1412 is supported at the bottom of the support platform 1411, and the lower end of the support rod 1412 is disposed below the pressure chamber 111.
The output end of the crucible rotation control motor 141 is connected with the lower end of the support rod 1412 to drive the support bracket 141 to rotate.
The crucible elevation control motor 142 controls the elevation of the support bracket 141. For this, the crucible elevation control motor 142 may control the elevation of the crucible rotation control motor 141 by controlling the elevation of the elevation platform where the crucible rotation control motor 141 is located, thereby controlling the elevation of the support bracket 141.
The seed crystal mounting mechanism 15 is used for seed crystal mounting and controlling the contact of the seed crystal with the gallium oxide melt 2. The seed crystal mounting mechanism 15 includes: a seed rod 151, a seed rod rotation control motor 152, and a seed rod elevation control motor 153.
The seed rod 151 has a round rod-like structure arranged vertically. The seed rod 151 passes through the top wall of the pressure cavity 111, the lower end of the seed rod 151 is arranged above the die platform 1322, the lower end of the seed rod 151 is provided for seed crystal installation, and the upper end of the seed rod 151 is arranged above the pressure cavity 111.
An output end of the seed rod rotation control motor 152 is connected to a lower end of the seed rod 151 to drive the seed rod 151 to rotate.
The seed rod elevation control motor 153 controls elevation of the seed rod rotation control motor 152. For this reason, the seed rod lifting control motor 153 may control the lifting of the seed rod 151 by controlling the lifting of the lifting platform on which the seed rod rotation control motor 152 is located to control the lifting of the seed rod rotation control motor 152.
The embodiment of the invention provides a growth method of a gallium oxide single crystal rod 3, which adopts the growth equipment, and comprises the following steps:
(1) Gallium oxide powder is charged into the iridium crucible 131.
In the steps, the gallium oxide powder is compacted and filled as much as possible.
(2) Melt discharge mold 132 was installed into iridium crucible 131, and crucible lid 133 was closed over the top crucible opening of iridium crucible 131.
In the above steps, a gap is not formed between the crucible cover 133 and the melt discharge die 132 as much as possible.
(3) The iridium crucible 131 is placed on a support platform 1411.
In the above step, the iridium crucible 131 is placed at the center of the supporting stage 1411, ensuring that the iridium crucible 131 is positioned at the center of the heater 121.
(4) The position and temperature field of the iridium crucible 131 are stabilized by a crucible rotation control motor 141 and a crucible elevation control motor 142.
(5) A seed crystal is mounted to the seed rod 151.
In the above steps, the seed crystal must be firmly mounted.
(6) An oxygen tube 134 is installed into the inlet port of the crucible cover 133.
In the above steps, the oxygen pipe 134 is firmly installed.
(7) After the gallium oxide powder is melted, the temperature of the heater 121 is raised to 1900 ℃, and the gallium oxide melt on the die platform 1322 is controlled by the oxygen control structure 135, so that the oxygen flow is kept unchanged.
In the above steps, a small amount of gallium oxide melt is only required to be deposited on the mold platen 1322.
(8) The seed rod 151 is lowered above the die stage 1322 by the crucible elevation control motor 142 to contact with the gallium oxide melt, and gallium oxide single crystal growth is started. Wherein, in the seeding process, the rotation speed of the seed rod 151 is 7-10rad/min, the lifting speed of the seed rod 151 is 15-20mm/h, in the shouldering process, the rotation speed of the seed rod 151 is adjusted to 10-20rad/min, the lifting speed of the seed rod 151 is adjusted to 30-40mm/h, and the cooling speed reaches 3 ℃/h.
In the above steps, in the growth process of gallium oxide single crystal, seeding is firstly carried out, then shouldering is carried out, and finally the diameter of the gallium oxide crystal is stabilized for growth and amplification.
The gallium oxide single crystal obtained by the growth equipment 1 and the growth method has 4 inches, good product quality, higher parameters and better defects of less than 80.
In general, the gallium oxide decomposition is suppressed by introducing oxygen into the iridium crucible 131, and the crucible cover 133 is sealed to suppress a large amount of volatilization of the melt, so that the gallium oxide decomposition and volatilization are effectively suppressed, and the crystallization rate of single crystals is greatly improved; the melt is extruded from the hole of the melt discharging die 132 by controlling the flow of oxygen, and the discharging amount of the melt is controlled to enable gallium oxide melt 2 seed crystals to slowly grow.
The same or similar reference numerals in the drawings of the present embodiment correspond to the same or similar components. In the description of the present invention, it should be understood that, if there is an azimuth or positional relationship indicated by terms such as "upper", "lower", "left", "right", etc., based on the azimuth or positional relationship shown in the drawings, it is only for convenience of describing the present invention and simplifying the description, but it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be constructed and operated in a specific azimuth, and thus terms describing the positional relationship in the drawings are merely illustrative and should not be construed as limitations of the present patent, and specific meanings of the terms described above may be understood by those skilled in the art according to specific circumstances.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (10)
1. A gallium oxide single crystal rod growth apparatus, comprising:
a pressure mechanism having a pressure chamber for controlling the pressure in the pressure chamber;
The heating mechanism is arranged in the pressure cavity and is used for controlling the temperature in the pressure cavity;
The gallium oxide melt discharging mechanism is arranged in the pressure cavity and is used for outputting gallium oxide melt and controlling the output quantity of the gallium oxide melt;
The lifting and rotating mechanism is used for controlling the lifting and rotating of the gallium oxide powder loading mechanism;
And the seed crystal installation mechanism is used for installing a seed crystal and controlling the seed crystal to be contacted with the gallium oxide melt.
2. The growth apparatus of claim 1, wherein the pressure mechanism comprises:
A pressure chamber defining the pressure chamber;
the circulating cooling water pipe is coiled on the peripheral wall of the pressure cavity;
And the base is supported at the bottom of the pressure cavity.
3. The growth apparatus of claim 1, wherein the pressure mechanism further comprises:
And the observation window is arranged at the top of the pressure cavity.
4. The growth apparatus of claim 1, wherein the heating mechanism comprises:
The heater is of a vertically arranged cylindrical structure.
5. The growth apparatus of any one of claims 1-4, wherein the gallium oxide melt discharge mechanism comprises:
an iridium crucible;
A melt discharging die provided with an output pipe and a die platform; the lower end of the output pipe extends into the iridium crucible; the die platform is arranged above the output pipe and gradually expands outwards from the peripheral wall of the upper end of the output pipe;
The crucible cover is arranged at the top crucible opening of the iridium crucible in a covering manner; the crucible cover is supported at the periphery of the output pipe and the bottom of the die platform; the crucible cover is provided with an air inlet;
The oxygen pipe penetrates through the top wall of the pressure cavity, the lower end of the oxygen pipe is arranged at the air inlet, and the upper end of the oxygen pipe is arranged above the pressure cavity;
And the oxygen control structure is arranged on the oxygen pipe and controls the oxygen flow in the oxygen pipe.
6. The growth apparatus of claim 4,
The die platform is arranged above the heating mechanism.
7. The growth apparatus of claim 4,
The lower end of the output pipe is provided with a plurality of protrusions, each protrusion is arranged around the central line of the output pipe, and the protrusions are abutted against the bottom wall of the iridium crucible.
8. The growth apparatus of claim 1, wherein the lifting and rotating mechanism comprises:
The support bracket is provided with a support platform and a support rod; the supporting platform is used for arranging the gallium oxide melt discharging mechanism; the support rod penetrates through the bottom wall of the pressure cavity, the upper end of the support rod is supported at the bottom of the support platform, and the lower end of the support rod is arranged below the pressure cavity;
the output end of the crucible rotation control motor is connected with the lower end of the supporting rod;
and the crucible lifting control motor is used for controlling the lifting of the supporting bracket.
9. The growth apparatus of claim 1, wherein the seed crystal mounting mechanism comprises:
the seed rod passes through the top wall of the pressure cavity, the lower end of the seed rod is arranged above the die platform, the lower end of the seed rod is used for installing the seed crystal, and the upper end of the seed rod is arranged above the pressure cavity;
the output end of the seed rod rotary control motor is connected with the lower end of the seed rod;
And the seed rod lifting control motor is used for controlling the lifting of the seed rod rotation control motor.
10. A method for growing a gallium oxide single crystal rod, comprising the following steps:
Charging gallium oxide powder into an iridium crucible;
installing a melt discharging mould into the iridium crucible, and covering a top crucible opening of the iridium crucible with a crucible cover;
placing the iridium crucible on a supporting platform;
the position and the temperature field of the iridium crucible are stable through the crucible rotation control motor and the crucible lifting control motor;
mounting a seed crystal to a seed rod;
installing an oxygen pipe into an air inlet of the crucible cover;
raising the temperature of the heater to 1900 ℃, and controlling the gallium oxide melt on the die platform through the oxygen control structure after the gallium oxide powder is melted, so as to keep the oxygen flow unchanged;
The seed rod is lowered to the upper part of the die platform through the crucible lifting control motor and is contacted with the gallium oxide melt, and gallium oxide single crystal growth is started; in the seeding process, the rotation speed of the seed rod is 7-10rad/min, the lifting speed of the seed rod is 15-20mm/h, in the shouldering growth process, the rotation speed of the seed rod is adjusted to 10-20rad/min, the lifting speed of the seed rod is adjusted to 30-40mm/h, and the cooling speed is 3 ℃/h.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410058436.XA CN118087025A (en) | 2024-01-15 | 2024-01-15 | Growth equipment and method for gallium oxide single crystal rod |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410058436.XA CN118087025A (en) | 2024-01-15 | 2024-01-15 | Growth equipment and method for gallium oxide single crystal rod |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118087025A true CN118087025A (en) | 2024-05-28 |
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ID=91155557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410058436.XA Pending CN118087025A (en) | 2024-01-15 | 2024-01-15 | Growth equipment and method for gallium oxide single crystal rod |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118087025A (en) |
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2024
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