CN118073240A - Welding spot defect in-situ monitoring device and method in flip chip two-dimensional packaging process - Google Patents
Welding spot defect in-situ monitoring device and method in flip chip two-dimensional packaging process Download PDFInfo
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- CN118073240A CN118073240A CN202410226768.4A CN202410226768A CN118073240A CN 118073240 A CN118073240 A CN 118073240A CN 202410226768 A CN202410226768 A CN 202410226768A CN 118073240 A CN118073240 A CN 118073240A
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- 238000003466 welding Methods 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title claims abstract description 47
- 230000007547 defect Effects 0.000 title claims abstract description 45
- 238000011065 in-situ storage Methods 0.000 title claims abstract description 24
- 238000012858 packaging process Methods 0.000 title claims abstract description 23
- 238000012806 monitoring device Methods 0.000 title claims description 12
- 230000007246 mechanism Effects 0.000 claims abstract description 62
- 238000010438 heat treatment Methods 0.000 claims abstract description 58
- 230000008569 process Effects 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 25
- 238000012544 monitoring process Methods 0.000 claims abstract description 16
- 238000001931 thermography Methods 0.000 claims abstract description 16
- 230000005540 biological transmission Effects 0.000 claims abstract description 10
- 230000033001 locomotion Effects 0.000 claims abstract description 9
- 238000003331 infrared imaging Methods 0.000 claims abstract description 6
- 229910000679 solder Inorganic materials 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 2
- 238000004093 laser heating Methods 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 24
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 12
- 238000012545 processing Methods 0.000 description 11
- 238000006073 displacement reaction Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000001914 filtration Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000011218 segmentation Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000003957 acoustic microscopy Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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Abstract
The invention relates to the technical field of detection of welding spot reliability in the advanced packaging flip chip bonding process, in particular to a device and a method for in-situ monitoring of welding spot defects in the flip chip two-dimensional packaging process, and the method comprises the following steps; step one, placing a two-dimensional flip chip which is stacked in an alignment manner on a supporting material; step two, adjusting the two-dimensional flip chip and the thermal infrared imager so that the two-dimensional flip chip which is subjected to alignment stacking can be imaged clearly in the thermal infrared imager, and the two-dimensional flip chip is positioned under the heating mechanism; and thirdly, controlling the bonding head of the heating mechanism to move downwards through the motion transmission mechanism, stopping moving when the bonding head of the heating mechanism contacts with the flip chip, setting a bonding heating curve of the heating mechanism, controlling the bonding head of the heating mechanism to heat, starting the thermal imaging mechanism to image, transmitting an infrared imaging result acquired in real time to the control system, acquiring the position of a welding spot in an image through the control system, and recording the temperature rise curve of the welding spot in real time.
Description
Technical Field
The invention relates to the technical field of detection of welding spot reliability in an advanced packaging flip chip bonding process, in particular to a device and a method for in-situ monitoring of welding spot defects in a flip chip two-dimensional packaging process.
Background
In the chip production and manufacturing process, various technological processes are connected, the technology is complex, and the micro changes of factors such as materials, environment, technological parameters and the like often lead to the chip to generate defects, so that the product yield is affected. The chip quality detection is used as a key link in a chip production line, and product quality information can be actively fed back, so that people can timely control the health condition of each production link, and the effect of the quality detection technology in the production line is promoted to be more and more remarkable. In the conventional flip chip two-dimensional packaging process, the commonly used detection methods are mainly classified into contact type and non-contact type detection. Contact detection is mainly used for detecting short circuits and open circuits of welding spots, but can not accurately and effectively position welding spot defects, and different testing devices are required to be designed for different flip chips. And the contact type detection can damage the chip surface in the detection process. In contrast, non-contact detection is a mainstream technology for flip chip defect detection, in which the micro-characteristics of the chip are obtained, the chip is not damaged, and the type of the solder joint defect, the position information and the like can be provided. It mainly includes optical vision, ultrasonic scanning microscopic detection (SAM), X-ray detection, etc. The 3D structural characteristics of the chip can be obtained through optical detection, and the defects and coplanarity of welding spots can be detected on line in real time mainly aiming at the process defects and quality control before the flip chip assembly, but the hidden defects of the welding spots are not easy to detect, and particularly the defects of the welding spots in the middle of the area array cannot be detected. SAM defect detection uses acoustic microscopy for defect detection, which, although giving good results, requires a liquid coupling medium, which makes the detection process more complex. X-ray detection is realized by different media with different X-ray transmission, so that the defect detection is very low in three-dimensional scanning efficiency for in-plane defects (such as transverse cracks). Moreover, X-rays sometimes damage the sample being tested and are harmful to the human body, thus limiting the applicability of the method. The infrared nondestructive detection is based on the theory of heat conduction and infrared imaging, and the characteristics of no contact measurement, no pretreatment, high shooting speed and the like are widely applied in the defect detection field. However, the existing infrared detection means are all used for detecting after the bonding of the flip chip two-dimensional package is completed, the detection process and the bonding process are completely separated, the efficiency is low, the state change of the welding spot in the bonding process is unknown, and the method belongs to blind bonding. And the heating mode generally adopts laser irradiation to heat the chip to be detected, and the chip can be damaged. Therefore, it is desirable to develop a defect in-situ monitoring device capable of monitoring the defects of solder joints in the bonding process in real time.
Disclosure of Invention
The invention provides a welding spot defect in-situ monitoring device and method in a two-dimensional packaging process of a flip chip, which solve the problems that the existing two-dimensional packaging defect detection technology of the flip chip is carried out after bonding is completed, the efficiency is low, damage to the flip chip is likely to occur, the state of the welding spot is difficult to monitor in real time, and the difficulty of adjusting bonding process parameters is increased.
The above object is achieved by the following technical scheme:
A welding spot defect in-situ monitoring device in a flip chip two-dimensional packaging process comprises:
The object stage is provided with a window, a supporting material is arranged in the window, and the supporting material can radiate through infrared waves;
the heating mechanism comprises a bonding head, and the bonding head is used for bonding the stacked two-dimensional flip chips on the supporting material;
And the infrared radiation emitted by the welding spots in the bonding process is transmitted to the thermal imaging mechanism through the supporting material.
The in-situ monitoring method for the welding spot defects in the two-dimensional packaging process of the flip chip comprises the following steps of:
step one, placing a two-dimensional flip chip which is completed to be aligned and stacked on a supporting material;
step two, adjusting the two-dimensional flip chip and the thermal infrared imager which are subjected to alignment and stacking, so that the two-dimensional flip chip which is subjected to alignment and stacking can be imaged clearly in the thermal infrared imager, and the two-dimensional flip chip which is subjected to alignment and stacking is positioned under a heating mechanism;
And thirdly, controlling the bonding head of the heating mechanism to move downwards through the motion transmission mechanism, stopping moving when the bonding head of the heating mechanism contacts with the flip chip, setting a bonding heating curve of the heating mechanism, controlling the bonding head of the heating mechanism to heat, simultaneously starting the thermal imaging mechanism to image, transmitting an infrared imaging result acquired in real time to the control system, acquiring the position of a welding spot in an image through the control system, and recording the temperature rise curve of the welding spot in real time.
And step four, analyzing the temperature rise curve and the processed infrared image, referring to the temperature rise curve of different types of defects shown in fig. 2, it can be seen that compared with the normal welding point temperature rise curve, the highest temperature of the welding point missing temperature rise curve is obviously higher, the highest temperature of the welding point bridging temperature rise curve is not greatly different from the normal welding point temperature rise curve, but the temperature rise rate of the normal welding point temperature rise curve in 0-5s is obviously lower than that of the welding point bridging temperature rise curve. Therefore, the judgment basis of the temperature is as follows, when the temperature rise rate of the welding spot is lower than that of other welding spots, the welding spot is bridged, and when the highest temperature of the temperature rise curve is obviously higher than that of the other welding spots, the welding spot is missing. And by analyzing the edge states of the welds shown in fig. 4 to 9, it can be seen that the normal weld structure is as shown in fig. 4, after the process shown in fig. 3: the method comprises the steps of sequentially performing initial bonding, reading an infrared image, performing image filtering processing, reading a gray level histogram of the image, performing threshold segmentation, solving a threshold value, identifying welding spot edges and displaying a result, obtaining a normal welding spot image identified profile diagram shown in fig. 5, obtaining a welding spot missing structure diagram shown in fig. 6, obtaining a welding spot missing image identified profile diagram shown in fig. 7 after the processing process shown in fig. 3, and obtaining a welding spot bridging image identified profile diagram shown in fig. 9 after the processing process shown in fig. 3.
And analyzing the shape change of the welding spot and whether defects occur or not in the bonding process through the temperature rise curve and the image recognition unit.
The welding spot defect in-situ monitoring device and method in the flip chip two-dimensional packaging process have the beneficial effects that: the original objective table is replaced by a material device such as germanium glass which can transmit 7-14 mu m of infrared radiation, and the device is combined with a bonding head heating device and a thermal infrared imager below the objective table to be matched with an image processing unit. The method can realize the defects of no contact, no damage, high efficiency, accurate monitoring of missing welding spots, bridging and the like in the packaging process. And the monitoring process and the bonding process are synchronously carried out in real time, so that the change of the state of a welding spot in the bonding process can be monitored in real time, the problem of blind bonding in the existing bonding process is solved, and the problems of difficulty in adjusting bonding process parameters and the like are effectively reduced.
Drawings
FIG. 1 is a schematic diagram of a device and method for in-situ monitoring of solder joint defects in a flip chip two-dimensional packaging process according to the present invention;
FIG. 2 is a graph of temperature rise for a normal weld, weld bridge, and weld missing;
FIG. 3 is an in-situ monitoring flow chart;
FIG. 4 is a diagram of a normal solder joint structure;
FIG. 5 is a profile after normal solder joint image recognition;
FIG. 6 is a diagram of a missing solder joint structure;
FIG. 7 is a schematic diagram of a contour map after recognition of a missing solder joint image;
FIG. 8 is a solder joint bridge bond pattern;
Fig. 9 is a profile view of a solder joint bridged image after recognition.
In the figure: 1. an objective table; 2. a motion transmission mechanism; 3. a heating mechanism; 4. a power supply; 5. a thermal imaging mechanism; 6. and a computer.
Detailed Description
The welding spot defect in-situ monitoring device for the two-dimensional packaging process of the flip chip comprises an objective table 1, wherein a window is arranged on the objective table 1, the size of the window is not smaller than that of the flip chip and a silicon substrate, a supporting material is fixedly connected in the window, the supporting material can radiate through infrared waves of 7-14 mu m, and the supporting material is level to the upper end face of the objective table 1;
wherein the support material comprises one of germanium glass, zinc selenide lens and silicon wafer;
The device also comprises a motion transmission mechanism 2 and a heating mechanism 3 with a bonding head, wherein the position of the heating mechanism 3 is adjusted by the motion transmission mechanism 2, and the heating mechanism 3 is used for heating and bonding a silicon substrate and a flip chip on a supporting material;
The heating mechanism 3 adopts any one mode of pulse heating, hot air heating, laser heating and ultrasonic heating, or is used in combination, the heating mechanism 3 can also adopt a bonding machine carrying a bonding head which is existing in the prior art, the motion transmission mechanism 2 adopts a multi-degree-of-freedom mechanical arm, or a linear transmission mechanism, such as a Z-axis displacement table in the prior art, when the Z-axis displacement table is adopted, the heating mechanism 3 is positioned right above a supporting material, the bonding head can be fixedly connected with a lifting sliding table of the Z-axis displacement table, the Z-axis displacement table drives the bonding head of the heating mechanism 3 to descend so as to be close to a flip chip on the supporting material, and the height of the heating mechanism 3 is adjusted according to the bonding height; the bonding head of the heating mechanism 3 sets a bonding head heating curve through a power supply 4, and the bonding head of the heating mechanism 3 is controlled to heat; wherein the power source 4 is preferably a pulsed heating power source;
Wherein, an insulating piece, such as a ceramic structural piece, can be added between the heating mechanism 3 and the Z-axis displacement table, and is used for ensuring insulation between the titanium alloy bonding head heating structure and the Z-axis displacement table, so as to avoid short circuit between the titanium alloy bonding head heating structure and the Z-axis displacement table during heating;
The thermal imaging mechanism 5 is arranged on the supporting structure and arranged below the supporting material, the position of the thermal imaging mechanism does not interfere with the bonding process, and the thermal imaging mechanism 5 adopts an infrared focal plane array, preferably a thermal infrared imager;
preferably, the heating mechanism 3, the flip chip, the silicon substrate, the germanium glass and the thermal infrared imager are arranged on the same axis from top to bottom, infrared radiation emitted by welding spots in the bonding process is transmitted to the thermal imaging mechanism 5 through the supporting material, the thermal imaging mechanism 5 is matched with the image processing unit, the single-frame response time of the thermal infrared imager is not more than 50ms, the dynamic response of the bonding process can be realized, and the defects of the welding spots can be identified according to the temperature rise curve of the welding spots.
The image processing unit comprises welding spot self-adaptive filtering, threshold segmentation and edge recognition, wherein the welding spot edge feature is used for recognizing normal welding spots, welding spots are missing and bridged, and the infrared thermal imaging technology is used for recognizing the defect type and position information of the welding spots.
The in-situ monitoring method for the welding spot defects in the flip chip two-dimensional packaging process is realized by using the monitoring device:
step one, placing a two-dimensional flip chip which is completed to be aligned and stacked on a supporting material;
step two, adjusting the two-dimensional flip chip and the thermal infrared imager which are subjected to alignment and stacking, so that the two-dimensional flip chip which is subjected to alignment and stacking can be imaged clearly in the thermal infrared imager, and the two-dimensional flip chip which is subjected to alignment and stacking is positioned under a heating mechanism;
And thirdly, adjusting a Z-axis displacement table, controlling the heating mechanism 3 to move downwards, stopping moving when the bonding head of the heating mechanism 3 contacts with the flip chip, setting a bonding heating curve of the heating mechanism 3, controlling the bonding head of the heating mechanism 3 to heat, simultaneously starting the thermal imaging mechanism 5 to image, transmitting an infrared imaging result acquired in real time to a control system, such as a computer 6, acquiring the position of a welding spot in an image through image processing software on the computer 6, and recording a temperature rise curve of the welding spot in real time.
Referring to fig. 2, which shows the temperature rise curves of different types of defects, it can be seen that the highest temperature of the missing temperature rise curve of the welding spot is significantly higher than that of the normal welding spot temperature rise curve, and the highest temperature of the bridged temperature rise curve of the welding spot is not greatly different from that of the normal welding spot temperature rise curve, but the temperature rise rate of the normal welding spot temperature rise curve within 0-5s is significantly lower than that of the bridged temperature rise curve of the welding spot. Therefore, the judgment basis of the temperature is as follows, when the temperature rise rate of the welding spot is lower than that of other welding spots, the welding spot is bridged, and when the highest temperature of the temperature rise curve is obviously higher than that of the other welding spots, the welding spot is missing.
Besides, the method can also be used for selecting a key frame from an infrared image, processing an infrared result in real time by referring to the process of fig. 2, improving the quality of the image, removing noise and enhancing specific characteristics by filtering the image, converting the infrared image into a gray image, dividing the gray image into threshold values, separating welding spots from other areas, identifying the edges of the welding spots by an edge identification algorithm, and identifying the defect types of the welding spots by combining the edge states.
After recognition, the edge states of the welding spots shown in fig. 4 to 9 are obtained, and it can be seen that the normal welding spot structure is as shown in fig. 4, and after the processing procedure shown in fig. 3: the method comprises the steps of sequentially performing initial bonding, reading an infrared image, performing image filtering processing, reading a gray level histogram of the image, performing threshold segmentation, solving a threshold value, identifying welding spot edges and displaying a result, obtaining a normal welding spot image identified profile diagram shown in fig. 5, obtaining a welding spot missing structure diagram shown in fig. 6, obtaining a welding spot missing image identified profile diagram shown in fig. 7 after the processing process shown in fig. 3, and obtaining a welding spot bridging image identified profile diagram shown in fig. 9 after the processing process shown in fig. 3.
Claims (10)
1. A welding spot defect in-situ monitoring device in a flip chip two-dimensional packaging process comprises:
The device comprises an object stage (1), wherein a window is arranged on the object stage (1), and a supporting material is arranged in the window, and is characterized in that the supporting material can radiate through infrared waves;
The heating mechanism (3) comprises a bonding head, and the bonding head is used for bonding a workpiece to be processed on a supporting material;
And the thermal imaging mechanism (5) transmits infrared radiation emitted by the welding spots in the bonding process to the thermal imaging mechanism (5) through the supporting material.
2. The device for in-situ monitoring of solder joint defects in a flip chip two-dimensional packaging process according to claim 1, further comprising a computer (6) for collecting infrared imaging results acquired by the thermal imaging mechanism (5), wherein the computer (6) acquires the position of the solder joint in the image and records the temperature rise curve of the solder joint in real time.
3. The device for in-situ monitoring of solder joint defects in a flip chip two-dimensional packaging process of claim 1, wherein the support material comprises one of germanium glass, zinc selenide lens and silicon wafer.
4. The device for in-situ monitoring of welding spot defects in a flip chip two-dimensional packaging process according to claim 1, wherein the motion transmission mechanism (2) adopts a multi-degree-of-freedom mechanical arm or a linear driving mechanism.
5. The welding spot defect in-situ monitoring device for the flip chip two-dimensional packaging process according to claim 1, wherein the heating principle of the heating mechanism (3) adopts any one of pulse heating, hot air heating, laser heating and ultrasonic heating.
6. The device for in-situ monitoring of solder joint defects in a flip chip two-dimensional packaging process according to claim 1, wherein the heating mechanism (3) is used for heating the bonding head through a power supply (4).
7. The device for in-situ monitoring of solder joint defects in a flip chip two-dimensional packaging process according to claim 6, wherein the power supply (4) is a pulse heating power supply.
8. The flip chip two-dimensional packaging process solder joint defect in-situ monitoring device according to claim 1, wherein the thermal imaging mechanism (5) is arranged below the supporting material.
9. A flip chip two-dimensional packaging process welding spot defect in-situ monitoring method, which is characterized by using the flip chip two-dimensional packaging process welding spot defect in-situ monitoring device according to any one of claims 2 to 8, and comprising the following steps:
step one, placing a two-dimensional flip chip which is completed to be aligned and stacked on a supporting material;
step two, adjusting the two-dimensional flip chip and the thermal infrared imager which are subjected to alignment and stacking, so that the two-dimensional flip chip which is subjected to alignment and stacking can be imaged clearly in the thermal infrared imager, and the two-dimensional flip chip which is subjected to alignment and stacking is positioned under a heating mechanism;
Step three, through the motion transmission mechanism (2), the bonding head of the heating mechanism (3) is controlled to move downwards, when the bonding head of the heating mechanism (3) is contacted with the flip chip, the movement is stopped, the bonding heating curve of the heating mechanism (3) is set, the bonding head of the heating mechanism (3) is controlled to heat, meanwhile, the thermal imaging mechanism (5) is started to image, the real-time acquired infrared imaging result is transmitted to the control system, the position of a welding spot in an image is acquired through the control system, and the temperature rise curve of the welding spot is recorded in real time.
10. The method for in-situ monitoring of solder joint defects in a flip chip two-dimensional package process according to claim 9, wherein when the temperature rise rate of a solder joint is lower than that of other solder joints, the solder joint is bridged, and when the highest temperature of a temperature rise curve is obviously higher than that of other solder joints, the solder joint is missing.
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| CN110849918A (en) * | 2019-10-31 | 2020-02-28 | 北京时代民芯科技有限公司 | Nondestructive detection method and system for welding spot defects of flip chip bonding device |
| CN117497432A (en) * | 2023-01-27 | 2024-02-02 | 苏州正齐半导体设备有限公司 | Bonding tool of flip chip laser bonding equipment |
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