CN118056033A - 具有承载环的cvd反应器或用于基板的承载环 - Google Patents

具有承载环的cvd反应器或用于基板的承载环 Download PDF

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CN118056033A
CN118056033A CN202280067742.9A CN202280067742A CN118056033A CN 118056033 A CN118056033 A CN 118056033A CN 202280067742 A CN202280067742 A CN 202280067742A CN 118056033 A CN118056033 A CN 118056033A
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wall
carrier ring
substrate
support
radially
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J·L·霍尔茨瓦尔思
M·科尔伯格
M·穆基诺维奇
S·斯特劳克
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Aixtron SE
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Abstract

本发明涉及一种布置在CVD反应器中的承载环(20)，所述承载环是用于支承布置在基座之上的基板(10)的支承装置的一部分并且由基座供应热量，其中重要的是，热量通过承载环(20)的环形接片(33)从基座传递至承载环(20)的径向外部区域(21)或径向内部区域(22)。

Description

具有承载环的CVD反应器或用于基板的承载环
技术领域
本发明涉及一种在CVD反应器中使用的承载环，所述承载环具有径向内部区域和径向外部区域，所述径向内部区域具有用于支撑在基板支架的支撑凸缘上的下侧和与所述下侧相对置的支撑面，贴靠面与所述支撑面相邻接，所述径向外部区域具有上侧和与所述上侧相对置的下侧，该下侧与在圆柱罩面上延伸的外壁相邻接，其中，所述外壁由环形接片构成，所述环形接片构造有与所述外壁相对置的内壁，其中，在中空圆柱内表面上延伸的所述内壁与所述径向内部区域的在内壁的径向以内延伸的下侧相邻接。
本发明还涉及一种由这种承载环和基板支架构成的装置和一种CVD反应器，所述CVD反应器具有一个或多个这种装置。
背景技术
文献US2010/0071624A1公开了一种具有基座的CVD反应器。该基座具有上侧，在该上侧上可以放置待涂层的基板。该基板的边缘突出于基座的环绕的凹空，承载环的径向内部区域与该凹空嵌接。承载环的径向外部区域突出于环形接片。
文献DE 10 2013 012 082 A1描述了一种CVD反应器，其具有从下侧加热的基座，该基座承载基板支架，基板可以被放置到该基板支架上。在一个实施例中，承载环支撑在基板支架的台阶上。承载环的径向向内指向的面从上到下以截锥体内表面的样式扩大。向内指向的面还呈阶梯状，因此承载环的横截面具有T形形状。
文献DE 102 32 731A1公开了一种同样具有T形横截面形状的承载环，其中，承载环的向内指向基板支架的表面也在截锥体罩面上延伸。
文献DE 10 2020 117 645 A1公开了一种在CVD反应器中使用的承载环，该承载环具有Z形横截面。
文献US2016/0172165 A1公开了一种沿其边缘构成台阶的基座。在该台阶上有承载环，该承载环通过向内指向的承载肩支撑基板的边缘。在径向外部区域中，承载环的向下指向的肋条与基座的环形留空部嵌接。肋条的垂直高度小于留空部的垂直深度，因此肋条的下端侧远离台阶面。
由文献DE 10 2017 101 648 A1和DE 101 35 151A1分别已知一种CVD反应器，其中，待涂层的基板支撑在基板支架上，该基板支架承载承载环，通过该承载环可以运输基板。
在例如在文献DE 10 2018 113 400 A1中已知的CVD反应器中，用加热装置从下方加热基座组件。这种类型的CVD反应器用于硅或碳化硅的沉积。沉积过程需要1300℃至1600℃的处理温度。基座组件具有由加热装置加热的底板。加热装置产生的热量通过该底板流入承载基板的基板支架中。承载环的径向内部区域支撑在基板支架的支撑凸缘上，在装载或卸载CVD反应器时，通过该承载环可以运输基板，为此，承载环具有可以被抓具从下方抓住的径向外部区域。承载环通过输入基板支架的热量和通过支撑凸缘传递给承载环的热量被加热。布置在处理室底部上的承载环以及布置在那里的基板将热量传递给较冷的处理室顶部。因此，承载环位于底板和处理室顶部之间的温度梯度内。承载环与基板支架或基板支架与底板之间的接口区域中的变形或其他不准确性可能影响热流。因此，运输环的温度遭受波动。
发明内容
本发明所要解决的技术问题是，提供能够减小这些温度波动的措施。
所述技术问题通过在权利要求书中给出的发明解决。从属权利要求不仅是在并列权利要求中给出的发明的有利扩展设计，而且是技术问题的独立解决方案。
根据本发明的第一方面建议一种承载环，该承载环具有T形横截面。T的两个臂部构成径向内部区域和径向外部区域。T的连接板构成环形接片，通过该环形接片将热量从底板运输至径向内环或径向外环。径向内部区域具有下侧，承载环可以以该下侧支撑在基板支架的支撑凸缘上。支撑面与在平面中延伸的下侧相对置，该支撑面也在平面中延伸，并且在运输到处理室中或者从处理室运输出来时，待涂层的基板的边缘可以支撑在该支撑面上。支撑面可以是由贴靠面构成的凹空的一部分。贴靠面可以在中空圆柱内表面上延伸。承载环的径向外部区域具有在平面中延伸的下侧，该下侧可以被叉子或抓臂从下方抓住，以便将承载环从基板支架抬起从而运输基板。上侧与径向外部区域的下侧相对置。径向内部区域的下侧与环形接片的内壁邻接，该内壁在中空圆柱内表面上延伸。环形接片的在圆柱罩面上延伸的外壁与径向外部区域的下侧相邻接。径向外部区域的下侧和径向内部区域的下侧可以在相互偏移的平面中延伸。例如，径向外部区域的下侧相对于环形接片的下边缘的距离可以大于径向内部区域的下侧与环形接片的下边缘的间距。此外可以规定，内壁在与环形接片的下边缘邻接的区域中以构成斜面或倒棱的方式扩大。这使将环放置在基板支架上变得容易。在一种扩展设计中，承载环由碳化硅构成。本发明的另一个方面涉及贴靠面，该贴靠面可以是中空圆柱内表面并且在环形接片的外壁的径向以内并且在环形接片的内壁的径向以外延伸。
所述承载环可以是实心环形体，该环形体在其整周上具有恒定的横截面。环形接片的高度可以大于径向内部区域或径向外部区域的径向延伸量。环形接片的材料厚度可以大于径向内部区域的材料厚度。环形接片的材料厚度可以小于径向外部区域的材料厚度。环形接片的材料厚度可以较小并且尤其小于环形接片的高度的一半，其中，环形接片的高度可以理解为环形接片的下边缘与径向外部区域或径向内部区域的两个下侧之一间的距离。如果这两个距离不同，则环形接片的高度可以理解为两个距离中较小的那个距离。径向外部区域和径向内部区域的自由端面以及环形接片的下边缘可以具有倒圆的棱边。
根据本发明的承载环通过T形获得与目前为止在沉积SiC时使用的承载环相比提高的抗扭刚度。此外有利的是，用于基板在基板支架的上侧上的定中心的贴靠面的直径大致等于环形接片的内壁的直径。环形接片的内壁的直径仅略大于基板支架的周向壁的直径。因此，根据本发明对贴靠面的直径的测定使得由贴靠面限定边界的用于支承基板的支承面大致与基板支架的轮廓相一致。因此，在基板的涂层期间，基板的边棱大致齐平地位于基板支架的周边上方。因此，基板支架与基板具有大致相同的直径。在本发明的一个优选设计方案中，对公称直径为150mm的基板涂层。于是由贴靠面限定边界的支承面优选具有大约151mm的直径，而基板支架的直径可以为150mm。环形接片的内壁的内径只需要比基板支架的直径大半个毫米，就能自动化地将运输环放置到基板支架上并且再次将运输环从基板支架取下。此外证明特别有利的是，径向内部区域的径向延伸量尽可能小并且尤其大致等于径向内部区域的材料厚度，该材料厚度优选为2mm。优选地，径向外部区域的材料厚度具有相同的值。但径向外部区域的径向延伸量可以大于径向内部区域的径向延伸量。基板支架可以直接支撑在基座的上侧上。但基板支架也可以由气垫承载，在基座上侧和基板支架下侧之间通过馈入气体产生所述气垫。
本发明还涉及一种用于在CVD反应器中支承基板的支承装置，该支承装置具有由基板支架承载的承载环。径向内部区域的下侧支撑在凹空的支撑凸缘上。该凹空包围圆盘形的基板支架。凹空的支撑凸缘相对于基板支架下侧的距离可以大于环形接片的下边缘与径向内部区域的下侧间的距离，从而环形接片的下边缘或者说由该下边缘构成的环形面与基板支架所处的凹槽的底部具有距离，其中，该凹槽可以由支撑在基座组件的基体上的一个或多个盖板形成。环形接片的由环形接片的下边缘与径向内部区域的下侧间的距离所定义的高度可以等于基板支架的下侧与支撑凸缘间的距离的至少50％或至少80％、优选至少90％、但最多100％并且优选小于100％。尤其规定，气体输入管路在凹槽的底部通入，运载气体可以从气体输入管路流出，运载气体在凹槽底部和基板支架下侧之间构成气垫，基板支架支承在该气垫上，因此热流必须穿过该气垫。去往基板支架的热流可以随气垫的高度和/或运载气体的组成而变化。气体输入管路构成喷嘴，所述喷嘴如此定向，使得从喷嘴出来的气流使基板支架围绕旋转轴线旋转。在盖板之间可以设置通道，可以从下方抓住承载环的径向外部区域的抓臂可以穿过这些通道。基座组件为此可以具有圆形轮廓。通道从基座组件的边缘向内延伸，其中，配属于一个装置的通道相互平行地延伸。
本发明还涉及一种在CVD反应器中的一个或多个前述装置，其中，这些装置围绕中央的进气机构呈圆形地布置。进气机构可以布置在环形处理室的中心。但进气机构也可以由处理室顶部构成，例如是喷淋头。
附图说明
以下借助附图阐述本发明的实施例。在附图中：
图1示出基座组件的立体图，该基座组件具有五个环形地围绕中心布置的基板支架12，这些基板支架分别承载一个基板10，所述基板能够通过承载环20被运输；
图2示出剖切CVD反应器得到的剖面示意图；
图3示出图1所示的基座组件的俯视图；
图4示出图2中的截图IV；
图5示出运输环20的立体图；
图6示出运输环20的剖面图；
图7示出另一实施例的与图4相符的示图。
具体实施方式
如图2所示，CVD反应器具有由不锈钢制成的壳体1。可抽真空的处理室2位于该壳体内。在本实施例中，进气机构5位于处理室2的中央，通过该进气机构可以将各种处理气体送入处理室2中。处理气体尤其包含含有硅元素的气体例如硅烷和含有碳元素的气体例如甲烷。这两种反应气体可以与运载气体例如氢气一起被送入处理室2中。处理室2向上由处理室顶部4限定边界。处理室顶部4可以是被冷却。但也可以规定，不主动冷却处理室顶部4。如图2和图3所示，处理室2的底部由基座组件3构成。
基座组件3具有由石墨、尤其涂层的石墨构成的基体14。该基体承载多个盖板15、27，这些盖板之间留有圆形的支承位置。每个支承位置构成凹槽17，该凹槽具有底部17'，该底部由基体14构成。
笔直延伸的通道31从具有圆形轮廓的基座组件3的边缘大约延伸至相应支承位置的中部。两条相互平行延伸的通道31分别与一个支承位置相切。抓具的两个抓臂可以通过通道31移入，以便将基板10从基板支架12上抬起。
为了沉积SiC层，通过布置在基座组件3下方的加热装置6将基座组件3加热到超过1000℃的温度并且尤其加热到处于1300℃以上的范围内并且尤其处于1600℃的范围内的温度。通过进气机构5将含有硅和碳的处理气体送入处理室2中，处理气体在处理室中热解分解，从而将碳化硅层沉积在布置在那里的基板10的表面上。为了实现均匀的层厚度和尤其均匀的掺杂曲线，基板10的表面温度与平均值的局部温度偏差必须是最小的。为此需要，也将足够的热流送入基板10的边缘区域中，或者说将不过高的热流输入基板10的边缘区域中。
图4示出由盖板15限定边界的凹槽17，该凹槽具有凹槽底部17'。凹槽17的边缘由盖板15的内壁18构成，该内壁在中空圆柱内表面上延伸。倒棱16连接在该内壁上，该倒棱与盖板15的指向处理室2的上侧邻接。
圆盘形的基板支架12位于凹槽17中，该基板支架具有下侧12'。通过未示出的气体喷嘴将运载气体送入在下侧12'和凹槽底部17'之间的间隙39，该运载气体产生气垫，使得下侧12'与凹槽底部17'具有距离a。通过该气垫可以影响去往基板10的热流，方式为使用具有不同导热性的气体的混合物并且改变混合比例或者通过气流量改变气垫高度。
基板支架12构成在圆柱罩面上延伸的周向壁19，该周向壁与由支撑凸缘13构成的凹空邻接，支撑凸缘环形围绕基板支架12地在平面中延伸。凹空以构成相对于周向壁19径向向内偏移的侧面的方式过渡为基板支架12的上侧32。上侧32可以相当于支撑凸起，基板10可以支撑在该支撑凸起上。但上侧32也可以有凹坑。
设有具有T形横截面的承载环20。承载环20具有径向内部区域22，该径向内部区域具有下侧22"，径向内部区域22可以通过该下侧支撑在支撑凸缘13上。支撑面23与下侧22’相对置，在图4所示的运行状态下，该支撑面与基板10的边缘10'具有距离。当承载环20被抬起时，支撑面23施展其作用。于是基板10以边缘10'支撑在支撑面23上。因此，支撑面23与下侧22"的距离小于支撑凸缘13与基板支架的上侧32的高度偏移量。
承载环20构成径向外部区域21。径向外部区域具有下侧30'，该下侧可以被抓臂之一从下方抓住，以便抬起承载环20。下侧30'的延伸平面相对于下侧22”的延伸平面略有高度偏移。径向外部区域21还具有上侧26，该上侧的延伸平面相对于支撑面23具有高度偏移，因此在支撑面23和围绕支撑面23的贴靠面24之间形成凹空11，该凹空在中空圆柱内表面上延伸。径向外部区域21构成外表面30，该外表面与径向内部区域的内表面22'相对置。外表面30可以以构成圆角29的方式过渡到上侧26。
承载环20的径向内部区域22和径向外部区域21分别构成T的臂部。承载环20的环形接片33构成T的连接板。环形接片33是柱形的环形体，该环形体与内部区域22和外部区域21材料相同地成型。环形接片33具有外壁30，该外壁在圆柱罩面上延伸并且以构成直角的方式过渡到下侧30'。环形接片33的内壁34以构成直角的方式与径向内部区域22的下侧32”连接。外壁36以构成倒圆的下环形面37的方式过渡为倒棱或者说倾斜侧面35，在中空圆柱内表面上延伸的内壁34与该斜面连接。在运输时或者在储存时，基板10的窄边棱可以支撑在贴靠面24上，该贴靠面在半径略大于内壁34的半径的中空圆柱内表面上延伸。贴靠面24的半径略小于外壁36的半径。
支撑凸缘13与基板支架2的下侧12'之间的在图4中用b表示的距离大于下侧22"与环形接片33的下边缘或者说下环形面37之间的距离d。环形面37与由下侧12'定义的平面之间的距离可以为0.5mm至3mm。
内壁34的半径如此大于周向壁19的半径，使得在周向壁19和内壁34之间产生具有间隙宽度c的间隙。周向壁19和内壁34之间的距离c可以为0.5mm至3mm。
承载环20可以是由SiC制成的均质固体，该均质固体的横截面具有三个臂部，其中，一个臂部由环形接片33构成，由内部区域22和外部区域21构成的两个臂部从该环形接片成直角地伸出。
通过穿过基板支架12的热流将基板10加热到处理温度。基板支架12的指向基板10的上侧可以具有一个或多个凹坑，从而从基板支架12的上侧到基板10的热流通过气隙发生，该气隙具有局部不同的高度，因此通过凹坑底部的走向可以影响热流。基板支架12的上侧可以是凹形的。可以仅基板的边缘支撑在基板支架12的边缘上，其中，这里可以设置单独的承载基板10的支撑元件。基板10的支撑点或支撑线与基板10的外边缘相间隔。穿过承载环20实现去往基板10的边缘10'的热流。在基板10的涂层过程中，基板10的边缘10'可以在支撑面23上方的较小距离处延伸，以便也通过气隙实现从承载环20到基板10的热流。但与现有技术不同的是，从基体14到径向内部区域20的主要热流不是通过基体支架12实现，而是穿过环形接片33实现。为此，环形接片33围绕整个基板支架12，使得基板支架12位于承载环20的空腔中。因此，环形接片33构成热传递路径，通过该热传递路径将大部分热量从基体14传递到径向内部区域22和/或径向外部区域21。通过环形接片33的材料厚度可以调节热流，因此可以可选地使用具有不同环形接片33的承载环20。承载环可以在其整个周向上具有恒定的横截面。
从下侧22”开始直至斜面35的起始处，间隙c可以在优选大于50％的竖直的间隙长度上具有恒定的间隙宽度。斜面35可以沿着环形接片33的内部区域延伸，该内部区域相当于距离d的小于50％。优选地，斜面35可以过渡为圆角，该圆角又可以无斜面地过渡到外壁36，因此外壁36由圆柱罩面构成，该圆柱罩面以构成圆角的方式过渡到下环形面37或顶点线。因此，延伸通过下环形面37的中心的顶点线相对于承载环20的横截面的中心线径向向外偏移。证明有利的是，径向外部区域21的径向延伸量大于径向内部区域22的径向延伸量。因此，内表面22'与内壁34的距离优选小于外表面30与外壁36的距离。此外有利的是，径向内部区域22的材料厚度、即从支撑面23到下侧22"的距离小于径向外部区域21的材料厚度、即上侧26与下侧30'的距离。根据本发明的环形接片23的另一个优点是其在根部区域中、即在环形接片33与下侧22”的连接处的材料厚度。在那里，环形接片33的材料厚度小于环形接片的竖直延伸量d。优选地，环形接片在彼此同心延伸的圆柱面34、36的区域中的材料厚度小于下侧22”与下环形面37的距离的一半。此外有利的是，径向外部区域21的下侧30'的水平面位于下侧22”的水平面与径向内部区域22的上侧23的水平面之间。
优选地，外壁36与盖板15的内壁18相对置，从而承载环20在其周部的主要区域上在环形留空部中延伸，该环形留空部的底部由基体14的上侧构成，并且环形留空部的壁部由基体支架12的周向壁19和盖板15的内壁18构成。
环形接片33的相对较大的竖直高度与径向外部区域21相结合具有如下效果，即，产生在横截面中呈L形的稳定体，执行用于基板10的承载功能的连接板从该稳定体径向向内突出。L形的基体实现在SiC的沉积过程中仅产生承载环10的较小变形。通过前述设计特征提供与现有技术相比对热应力机械稳定的承载环。
图7示出承载环20的另一实施例，该承载环用于执行在大于1300℃并且尤其处于1600℃范围内的温度下在CVD反应器中沉积SiC的方法。承载环20可以由SiC构成。该承载环具有径向内部区域22，该径向内部区域支撑在基板支架12的支撑凸缘13上，其中，径向内部区域22具有大约2mm的材料厚度并且从环形接片33的内壁34向内突出大约2mm。径向内部区域22的材料厚度小于台阶高度、即基板支架12的上侧32与支撑凸缘13的距离，因此在基板10上沉积SiC层时，基板10的边缘不支撑在支撑面23上。仅当承载环20被抬起时，支撑面23才与基板10的边缘接触。为此，承载环20具有径向外部区域21，该径向外部区域突伸超出环形接片33的外壁36并且具有下侧30'，该下侧可以被机器人臂的手指从下方抓住。
径向外部区域21构成贴靠面24，该贴靠面在具有第一直径D1的圆形线上延伸。第一直径D1略大于基板10的直径，基板的直径为150mm。
基板支架12具有在圆弧线上延伸的周向壁19，该周向壁具有第二直径D2，该第二直径为大约150mm。由于该设计，在沉积SiC层期间，基板10居中地支撑在基板支架12上，其中，基板10的边缘与圆柱形的周向壁19齐平。第一直径D1仅比第二直径D2大基板10的直径的制造公差的量。定中心功能可以由内表面22'执行，该内表面可以以较小的游隙贴靠在基板支架22的外罩面上。内表面22'的第三直径D3仅略大于由支撑凸缘13构成的台阶的圆柱壁的外径。
其他设计特征与图4所示的承载环20相符，因此请参考相关说明。
前述实施方式用于阐述本申请总体涵盖的多项发明，这些发明至少通过以下特征组合也分别独立地对现有技术进行扩展设计，其中，两个、多个或者所有这些特征组合也可以相结合，即：
一种CVD反应器、一种在CVD反应器中使用的承载环和一种用于在CVD反应器中支承基板的支承装置，其中，承载环设计为，基板支架的直径基本上等于基板的直径，和/或在横截面中呈T形的承载环20的径向内部区域和径向外部区域具有相同的材料厚度，并且径向内部区域仅在径向内部区域22的大约材料厚度上在径向以内在基板边缘下方延伸，和/或环形接片33几乎在基板支架12的下部区段的整个高度上延伸，该下部区段向上由支撑凸缘13限定边界并且向下由下侧12'限定边界，和/或基板支架12几乎完全位于由承载环20包围的空腔中并且材料一件式地构造，其中，最大保留在基板支架12的下侧12'与下环形面37之间的2mm的间隙，该间隙不被承载环20包围，和/或其中，承载环20的内圆柱面与基板支架2的外圆柱罩面之间的距离选择为，使得承载环20居中地支撑在由支撑凸缘13构成的台阶上。基板在直径方面的制造公差为大约1mm。该制造公差可以处于直径的1％至2％之间。
一种CVD反应器，其特征在于，设有环形接片33，所述环形接片构成在中空圆柱内表面上延伸的内壁34，该内壁沿着周向壁19间隔距离c地延伸。
一种CVD反应器，其特征在于，所述环形接片33的从下侧22"至环形接片33的下边缘37测得的高度d小于所述支撑凸缘13与所述基板支架12的下侧12'间的距离b，和/或所述高度d小于所述距离b的100％，但是等于所述距离b的至少50％或至少80％或至少90％。
一种承载环，其特征在于，所述内壁34在构造有使环33的材料厚度减小的圆角或斜面35的情况下过渡到所述下边缘37，所述外壁36与所述下边缘相连接。
一种支承装置，其特征在于，设有环形接片33，所述环形接片构成在中空圆柱内表面上延伸的内壁34，所述内壁沿着周向壁19间隔距离c地延伸。
一种支承装置，其特征在于，所述环形接片33的从下侧22"至环形接片33的下边缘37测得的高度d小于所述支撑凸缘13与所述基板支架12的下侧12'间的距离b的100％，但是等于所述距离b的至少50％或80％或95％。
一种CVD反应器，其特征在于，在中空圆柱内表面上延伸的贴靠面24在所述外壁36的径向以内延伸并且在所述内壁34的径向以外延伸。
一种CVD反应器，其特征在于，所述内壁34在构造有使环33的材料厚度减小的圆角或斜面35的情况下过渡到所述下边缘37，所述外壁36与所述下边缘相连接。
一种CVD反应器，其特征在于，在横截面中基本上呈D形的承载环20由SiC构成。
一种CVD反应器、一种支承装置或者一种承载环，其特征在于，所述径向外部区域21构成在圆柱罩面上延伸的外表面30，并且所述径向内部区域22具有在所述内壁34的径向以内、在中空圆柱内表面上延伸的内表面22'。
一种CVD反应器、一种支承装置或者一种承载环，其特征在于，两个彼此同心延伸的圆柱面34、36之间的距离小于所述径向内部区域22的下侧22"与所述环形接片33的下边缘37间的距离d并且最大等于该距离d的50％。
一种CVD反应器、一种支承装置或者一种承载环，其特征在于，内圆柱面34比外圆柱面36具有更大的高度。
所有公开的特征(本身及其相互组合)都有发明意义或发明价值。在本申请的公开文件中，所属/附属的优先权文本(在先申请文件)的公开内容也被完全包括在内，为此也将该优先权文本中的特征纳入本申请的权利要求书中。从属权利要求的特征即使没有相应权利要求的技术特征也都是对于现有技术有独立发明意义或价值的改进设计，尤其可以这些从属权利要求为基础提出分案申请。在每个权利要求中提供的发明可以附加地具有一个或多个在前述说明中、尤其设有附图标记和/或在附图标记列表中提供的技术特征。本发明也涉及一些设计形式，其中，在前述说明书中提到的个别技术特征不能实现，尤其就此可被识别出对于各个应用目的是不必要的或者通过其它技术上可同样实现的器件可被替代。
附图标记列表
1 CVD反应器壳体
2 处理室
3 基座组件
4 处理室顶部
5 进气机构
6 加热装置
7 杆部
8 排气机构
9 旋转驱动装置
10 基板
10' 基板的边缘
11 凹空
12 基板支架
12' 下侧
13 支撑凸缘
14 基体
15 盖板
16 倒棱
17 凹槽
17' 凹槽底部
18 内壁
19 周向壁
20 承载环
21 径向外部区域
22 径向内部区域
22' 内表面
22” 下侧
23 支撑面
24 贴靠面
25 倒圆的棱边
25' 倒棱
26 上侧
27 盖板
29 圆角边缘
30 外表面
30' 下侧
31 通道
32 上侧
33 环形接片
34 内壁
35 斜面
36 外壁
37 下环形面
38 凹空
39 间隙
a 间隙高度
b 距离
c 间隙宽度
d 距离
D1 第一直径
D2 第二直径
D3 第三直径

Claims (15)

1.一种用于在基板(10)上沉积SiC层的CVD反应器，所述CVD反应器具有壳体(1)、布置在壳体中的基座组件(3)、用于加热基座组件(3)的加热装置(6)、布置在处理室顶部(4)和基座组件(3)之间的处理室(2)以及用于将处理气体送入处理室(2)中的进气机构(5)，其中，所述基座组件(3)具有至少一个支承装置，用于支承在所述处理室(2)中待处理的基板(10)，所述支承装置具有圆盘形的基板支架(12)和由基板支架(12)的支撑凸缘(13)承载的承载环(20)，所述基板支架具有上侧(32)和与所述上侧相对置的下侧(12')以及在圆柱罩面上延伸的周向壁(19)，其中，所述承载环(20)具有径向内部区域(22)，所述径向内部区域的下侧(22")放置在所述支撑凸缘(13)上，并且所述径向内部区域的与下侧(22")相对置的上侧构成用于支撑所述基板(10)的边缘(10')的支撑面(23)，其中，所述承载环(20)具有径向外部区域(21)，所述径向外部区域具有上侧(26)和与所述上侧(26)相对置的下侧(30')，该下侧(30')与在圆柱罩面上延伸的外壁(36)邻接，并且其中，所述支撑面(23)由具有第一直径(D1)的贴靠面(24)限定边界，其特征在于，设有环形接片(33)，所述环形接片具有在中空圆柱内表面上延伸的内壁(34)，所述内壁具有第二直径(D2)并且沿着周向壁(19)延伸，其中，所述第一直径(D1)仅以所述基板(10)的直径公差的量大于所述第二直径(D2)，并且所述环形接片(33)的从下侧(22")至环形接片(33)的下边缘(37)测得的高度(d)小于所述支撑凸缘(13)与所述基板支架(12)的下侧(12')间的距离(b)。
2.根据权利要求1所述的CVD反应器，其特征在于，所述高度(d)小于所述距离(b)的100％，但是等于所述距离(b)的至少50％或至少80％或至少90％。
3.一种在用于在基板(10)上沉积SiC层的CVD反应器中使用的承载环(20)，所述承载环具有径向内部区域(22)和径向外部区域(21)，所述径向内部区域具有用于支撑在基板支架(12)的支撑凸缘(13)上的下侧(22")和与所述下侧(22")相对置的支撑面(23)，具有第一直径(D1)的贴靠面(24)与所述支撑面相邻接，所述径向外部区域具有上侧(26)和与所述上侧(26)相对置的下侧(30')，该下侧(30')与在圆柱罩面上延伸的外壁(36)相邻接，其中，所述外壁(36)由环形接片(33)构成，所述环形接片构造有与所述外壁(36)相对置的内壁(34)，其中，在中空圆柱内表面上延伸的所述内壁(34)与所述径向内部区域(22)的在内壁(34)的径向以内延伸的下侧(32")相邻接，其特征在于，所述第一直径(D1)仅以基板(10)的直径公差的量大于所述内壁(34)的第二直径(D2)。
4.一种用于在CVD反应器中支承基板(10)的支承装置，所述支承装置具有圆形的基板支架(12)和由基板支架(12)的支撑凸缘(13)承载的承载环(20)，所述基板支架具有在圆柱罩面上延伸的周向壁(19)，其中，所述承载环(20)具有径向内部区域(22)，所述径向内部区域的下侧(22")放置在所述支撑凸缘(13)上，并且所述径向内部区域的与下侧(22")相对置的上侧构成用于支撑所述基板(10)的边缘(10')的支撑面(23)，其中，所述承载环(20)具有径向外部区域(21)，所述径向外部区域具有上侧(26)和与所述上侧(26)相对置的下侧(30')，该下侧(30')与在圆柱罩面上延伸的外壁(36)邻接，并且其中，所述支撑面(23)由具有第一直径(D1)的贴靠面(24)限定边界，其特征在于，设有环形接片(33)，所述环形接片构造有在中空圆柱内表面上延伸的内壁(34)，所述内壁具有第二直径(D2)，其中，所述第一直径(D1)仅以所述基板(10)的直径公差的量大于所述第二直径。
5.根据权利要求4所述的支承装置，其特征在于，所述环形接片(33)的从下侧(22")至环形接片(33)的下边缘(37)测得的高度(d)小于所述支撑凸缘(13)与所述基板支架(12)的下侧(12')间的距离(b)的100％，但是等于所述距离(b)的至少50％或80％或95％。
6.根据权利要求1或2所述的CVD反应器或者根据权利要求3所述的承载环或者根据权利要求4或5所述的支承装置，其特征在于，在中空圆柱内表面上延伸的贴靠面(24)在所述外壁(36)的径向以内延伸并且在所述内壁(34)的径向以外延伸。
7.根据权利要求1、2或6所述的CVD反应器或者根据权利要求3或6所述的承载环或者根据权利要求4、5或6中任一项所述的支承装置，其特征在于，所述内壁(34)在构造有使环(33)的材料厚度减小的圆角或斜面(35)的情况下过渡到所述下边缘(37)，所述外壁(36)与所述下边缘相连接。
8.根据权利要求1、2、6或7中任一项所述的CVD反应器或者根据权利要求3、6或7所述的承载环或者根据权利要求4至7中任一项所述的支承装置，其特征在于，在横截面中基本上呈T形的承载环(20)由SiC构成。
9.根据权利要求1、2、6、7或8中任一项所述的CVD反应器或者根据权利要求3、6、7或8所述的承载环或者根据权利要求4至8中任一项所述的支承装置，其特征在于，所述径向外部区域(21)构成在圆柱罩面上延伸的外表面(30)，并且所述径向内部区域(22)具有在所述内壁(34)的径向以内、在中空圆柱内表面上延伸的内表面(22')。
10.根据权利要求1、2、6、7、8或9中任一项所述的CVD反应器或者根据权利要求3、6、7、8或9所述的承载环或者根据权利要求4至9中任一项所述的支承装置，其特征在于，两个彼此同心延伸的圆柱面(34、36)之间的距离小于所述径向内部区域(22)的下侧(22")与所述环形接片(33)的下边缘(37)间的距离(d)并且最大等于该距离(d)的50％。
11.根据权利要求1、2、6、7、8、9或10中任一项所述的CVD反应器或者根据权利要求3、6、7、8、9或10中任一项所述的承载环或者根据权利要求4至10中任一项所述的支承装置，其特征在于，内圆柱面(34)比外圆柱面(36)具有更大的高度。
12.根据权利要求1、2、6、7、8、9、10或11中任一项所述的CVD反应器、根据权利要求3、6、7、8、9、10或11所述的承载环或者根据权利要求4至11中任一项所述的支承装置，其特征在于，所述径向内部区域(22)的下侧(22")与支撑面(23)间的距离小于所述支撑凸缘(13)与所述基板支架(12)的上侧(23)间的距离。
13.根据权利要求1、2或6至12中任一项所述的CVD反应器、根据权利要求3或6至12所述的承载环或者根据权利要求4至12中任一项所述的支承装置，其特征在于，所述径向内部区域(22)的材料厚度等于所述径向外部区域(21)的材料厚度，和/或内部区域(22)的材料厚度和外部区域(21)的材料厚度分别等于2mm。
14.根据权利要求1、2或6至13中任一项所述的CVD反应器、根据权利要求3或6至13所述的承载环或者根据权利要求4至13中任一项所述的支承装置，其特征在于，在所述内壁(34)和外壁(36)之间定义了环形接片(33)的材料厚度的距离小于所述下侧(22")至所述环形接片(33)的下边缘(37)的距离(d)的一半。
15.一种CVD反应器、一种支承装置或者一种承载环，其特征在于，具有前述权利要求中任一项或者说明书中的一个或多个特征。
CN202280067742.9A 2021-10-07 2022-10-06 具有承载环的cvd反应器或用于基板的承载环 Pending CN118056033A (zh)

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DE10232731A1 (de) 2002-07-19 2004-02-05 Aixtron Ag Be- und Entladevorrichtung für eine Beschichtungseinrichtung
WO2007131547A1 (de) 2006-05-15 2007-11-22 Aixtron Ag Halbleiterbehandlungsvorrichtung für ein cvd- oder rtp-verfahren
KR101397124B1 (ko) 2007-02-28 2014-05-19 주성엔지니어링(주) 기판지지프레임 및 이를 포함하는 기판처리장치, 이를이용한 기판의 로딩 및 언로딩 방법
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