CN113383110A - Cvd反应器的基座 - Google Patents
Cvd反应器的基座 Download PDFInfo
- Publication number
- CN113383110A CN113383110A CN201980091247.XA CN201980091247A CN113383110A CN 113383110 A CN113383110 A CN 113383110A CN 201980091247 A CN201980091247 A CN 201980091247A CN 113383110 A CN113383110 A CN 113383110A
- Authority
- CN
- China
- Prior art keywords
- susceptor
- gas
- radial
- substrate holder
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 239000000725 suspension Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 27
- 238000010438 heat treatment Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005755 formation reaction Methods 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 92
- 239000012159 carrier gas Substances 0.000 abstract description 14
- 108091006146 Channels Proteins 0.000 description 61
- 238000010586 diagram Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 235000012149 noodles Nutrition 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- IHQKEDIOMGYHEB-UHFFFAOYSA-M sodium dimethylarsinate Chemical class [Na+].C[As](C)([O-])=O IHQKEDIOMGYHEB-UHFFFAOYSA-M 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45508—Radial flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
本发明涉及一种用于CVD反应器的基座,所述基座具有用于支承基片架(2)的支承面(7)。载气馈入内部的径向区域(11)中,以便使支承在支承面(7)上的基片架保持悬浮。馈入内部的径向区域(11)中的气体自排出通道(6)从第二径向区域(12)逸出并且以少部分从包围第二径向区域(12)的、对应于第三径向区域(13)的间隙(9)逸出。排出通道(6)的横截面积和间隙(9)的径向长度的尺寸设计为,使得当间隙具有200μm的间隙高度时,通过气体排出管路(6)的气体体积流量大于通过间隙(9)的气体体积流量。
Description
技术领域
本发明涉及一种基座,所述基座具有至少一个带有圆形基本轮廓的支承面,所述支承面用于围绕所述支承面的中心旋转支承圆盘状的基片架,其中,所述支承面具有第一径向区域,至少一个气体分配通道在所述第一径向区域中延伸,气体输入管路通入所述气体分配通道中,所述支承面还具有第二径向区域,所述第二径向区域相对于中心在径向上与第一径向区域错开并且所述第二径向区域构成具有一个或者多个排出通道的气体排出管路,所述支承面还具有第三径向区域,所述第三径向区域包围第一径向区域和第二径向区域并且在支承面和基片架之间构成直接邻接在支承面的径向外部边缘上的间隙,其中,所述径向区域设计为,使得在第一径向区域中通过气体输入管路馈入的气体流在支承面和基片架的底侧之间的容腔中产生压力,所述压力使基片架保持悬浮并且所述压力通过气体排出管路并且通过间隙离开所述容腔。
本发明还设计一种由基座和一个或者多个基片架构成的基座装置、一种具有这种基座或者基座装置的CVD反应器以及基座或者基座装置在CVD反应器中的应用。
背景技术
由专利文献US 9,447,500 B2(DE 10 2009 044 276 A1)已知前述类型的基座。
按照本发明的基座是CVD反应器的部件并且与支承在支承面上的基片架构成基座装置。基座具有圆盘的形状,具有围绕该圆形的中心布置的分别用于支承基片架的支承面。每个基片架能围绕图轴旋转地置入基座的上侧的兜孔中。支承面具有三个径向区域。位于兜孔的底部中的螺旋状的气体分配通道位于内部的径向区域中,所述气体分配通道通过气体输入管路馈送载气。载气将基片架抬升至悬浮的位置中并且为所述基片架提供旋转驱动。气体收集通道位于包围第一径向区域的第二径向区域中,气体排出通道从所述气体收集通道发源,以便将载气从容腔中输出。在第二径向区域的径向外部延伸的第三径向区域构成间隙,现有技术中的载气的不可忽视的部分能够通过所述间隙从支承面和基片架的底侧之间的容腔中逸出。通过间隙逸出的气体进入布置在基座以上的处理室中,工艺气体流动通过所述处理室,所述工艺气体被该废气流稀释。流动通过间隙的气体流构成相对于工艺气体流的横向流动并且因此干扰工艺气体流的流动剖面。
此外,现有技术还包括专利文献DE 603 04 850 T2、GB 2 264 959 A和US 5,788,777 A。
发明内容
本发明所要解决的技术问题在于,提供一种措施,通过所述措施避免由于构成用于支承基片架的气垫的气体干扰工艺气体流或者稀释工艺气体。
所述技术问题通过在权利要求中给出的发明解决。从属权利要求不仅呈现了有利的改进方案,而且也是所述技术问题的独立解决方案。
本发明首先主要建议一种能够在CVD中使用的基座,所述基座构成一个、优选多个圆形的支承面。支承面可以布置在围绕优选呈圆盘状的基座的中心的周向线上。支承面可以以最紧密的布置结构布置在周向线上。在基座的构成支承面的宽侧面上可以布置凹槽,圆盘状的基片架布置在所述凹槽中,其中,所述凹槽的底部构成支承面。然而由此构成的兜孔(Taschen)也能够由放置在基座的宽侧面上的覆盖板构成。按照本发明的基座具有带有第一径向区域的支承面。第一径向区域可以是在中心上延伸的最内部的径向区域,至少一个尤其是螺旋形的气体通道在所述最内部的径向区域中延伸。气体通道可以是构成支承面的兜孔的底部中的凹槽。气体输入管路通入气体分配通道的径向最内部的区域中,载气能够通过所述气体输入管路馈入气体分配通道中。按照本发明的基座具有带有第二径向区域的支承面,所述第二径向区域相对于中心与第一径向区域错开。第二径向区域优选由包围第一径向区域的气体收集通道构成,其中,所述气体收集通道可以是构成支承面的兜孔的底部中的环形的凹槽。第二径向区域具有一个或者多个排出通道。所述排出通道优选从气体收集通道发源并且远离支承面通入。排出通道可以通入基座的远离构成支承面的宽侧的背侧中。然而排出通道也可以通入基座的边缘、尤其是周向边缘中。然而也规定,排出通道参照流动通过CVD反应器的处理室的工艺气体流在支承面的下游通入,其中,尤其规定,排出通道通入布置在支承面的径向外部上的区域中。尤其规定,四个、六个或者更多个排出通道从气体收集通道发源。为了支承四寸晶圆、六寸晶圆或者八寸晶圆,支承面可以具有约10cm、15cm或者20cm的直径,其中,尤其规定,沿着优选呈圆形的气体收集通道的周向尺寸至少每四厘米至十厘米存在一个排出通道。按照本发明的基座在具有排出通道的第二径向区域的径向外部具有第三径向区域,所述第三径向区域与基片架的环形的、径向最外侧的区域共同构成间隙。基片架具有圆盘的形状并且以其底侧的径向内部区域覆盖第一和第二径向区域。底侧的径向外部区域构成周向间隙的间隙边界面,所述周向间隙在另一侧由支承面的由第三径向区域构成的面限定。在第一径向区域中通过气体输入管路馈入的气体流在支承面和基片架的底侧之间的容腔中产生压力。该压力使基片架保持悬浮。馈入容腔中的气体通过气体排出管路和在第三径向区域的周向面与基片架的边缘区域之间的间隙离开容腔。按照本发明,排出通道的横截面积和间隙的径向长度的尺寸设计为,使得当间隙不超过300μm的最大间隙高度时,通过气体排出管路的气体体积流量大于通过间隙的气体体积流量。按照本发明能够通过改变馈入容腔中的气体流,在50μm至300μm、优选100μm至250μm的范围中改变间隙高度,以便由此改变气垫的高度,由此影响从布置在基片架下方的加热装置向被所述基片架承载的基片的热传递。按照本发明的基座具有包围第二径向区域的、构成间隙的面,所述面具有至少4mm的径向尺寸。由排出通道构成的、数量至少为四的孔(或称为钻孔)可以具有至少2mm、优选至少3mm的直径。尤其规定,多个孔以相同的间隔布置在圆形的第二径向区域的轴向尺寸线上。所述孔优选位于构成气体收集通道的圆形的沟槽中,其中,相邻的孔的距离最大可以为10mm或者20mm。如果基座具有多个支承面,则这些支承面这样彼此间隔,使得两个相邻支承面的气体收集通道的距离为至少15mm、优选至少20mm。最紧密地彼此贴靠地布置的支承面优选沿着围绕基座的中心的圆弧线布置。在将两个相邻的支承面的中心相互连接的连接直线上,各个气体收集通道优选具有至少15mm、特别优选至少20mm的间距,从而使基片架能够以足够的径向距离搭叠气体收集通道,从而分别限定出间隙。限定间隙的面是完全一致的环形面,所述环形面可以沿着径向呈台阶状或者呈波状。间隙优选在其整个间隙面上具有恒定的间隙高度。为此有利的是,两个限定间隙的面、基片架的底侧的边缘区域和支承位置的第三径向区域的边缘区域由平面构成。以r表示构成排出通道的孔的半径,以la表示该孔的长度,以η表示载气的动力学粘度并且以△p表示气垫中的压力和处理室的压力之间的压力差,那么通过排出通道的气体体积流量由下述关系式表达:
如果还以u表示第三边缘区域的环形间隙的周长,以ls表示间隙的径向长度并且以h表示间隙的高度,流动通过间隙的体积流量由下述关系式表示:
其中,u=π·d表示第二径向区域的周长。按照本发明,排出通道的数量和排出通道的直径(半径)设计为,使得所有流动通过排出通道的气体流Qa的总和大于流动通过所具有的最大间隙高度h为300μm的间隙的气体流Qs。这导致了以下设计规定:
在间隙高度h=300μm时,该关系式的左侧优选为该关系式的右侧的至少两倍、优选至少五倍、优选至少十倍、优选至少二十倍并且特别优选至少五十倍。为此尤其足够的是,设置足够大数量的排出通道,所述排出通道的直径d至少为2mm、优选至少3mm。
此外,本发明涉及一种基座装置,在所述基座装置中,圆盘状的基片架对应配属于每个支承面,所述基片架在所有三个径向区域上延伸并且在其底侧的径向外部区域中具有与第三径向区域的面共同限定出间隙的面。
此外,本发明涉及这种基座或者这种基座装置在CVD反应器中的应用或者在用于在基片上沉积层的方法中的应用,所述基片在沉积过程中被基片架承载。在此将载气、例如氢气或者氮气馈入支承面和基片架的底侧之间的容腔中。在基片架的底侧和支承面之间的容腔内产生压力,所述压力将基片架抬高并且保持悬浮。气体流在此调节为,使得间隙高度处于50μm至250μm之间的范围中。由于按照本发明地设计第三径向区域的径向长度的尺寸和排出通道的数量和横截面的尺寸,所述排出通道构成具有比最大尺寸300μm的间隙更小的流动阻力的气体排出管路。
本发明还涉及一种具有进气元件的CVD反应器,工艺气体通过所述进气元件馈入处理室中,在所述处理室中进行工艺气体热解。处理室的底部由如前所述的基座构成,其中,所述基座构成至少一个支承兜孔,所述基座通过所述支承兜孔构成用于支承基片架的支承面。基座优选具有旋转对称性,其中,进气元件布置在基座的中心的区域中。在围绕基座的中心的圆弧线上布置有多个兜孔,基片架分别支承在所述兜孔中。基座围绕对称轴线旋转驱动。布置在基座下方的加热装置使基片达到工艺温度。
附图说明
以下根据附图对本发明的实施例进行更详尽的阐述。在附图中:
图1示出了按照本发明的基座的俯视图,所述基座具有十二个布置在围绕基座的中心的圆弧线上的分别用于支承基片的支承面7,
图2放大地示出了根据图1中剖切线II-II的剖面,
图3放大地示出图1中的局部III,
图4在三维视图中示出了按照图1中的剖切线IV-IV的部段,
图5示出了剖切基片架2得到的剖视图,所述基片架置入第一实施例的基座1的兜孔中,
图6示出了第二实施例的对应于图5的示图,
图7示出了第三实施例的对应于图5的示图,
图8示意性地示出了基座装置1、2在具有壳体23的CVD反应器中的布置结构,
图9示出了第四实施例的对应于图4的示图,
图10示出了第五实施例的对应于图4的示图,并且
图11示出了另一实施例的对应于图5的示图,
具体实施方式
按照本发明的基座应用在如图8所示的CVD反应器、尤其是MOCVD反应器中。处理室位于能抽真空的壳体23中,借助进气元件22将工艺气体馈入所述处理室中。在处理室的中心实现工艺气体的馈入,所述处理室的底部由基座1的向上指向的宽侧构成。基座可以具有图1所示的造型,即具有例如十二个围绕中心均匀地间隔地布置的支承面7,其中,每个支承面7设计为兜孔。兜孔可以由由石墨制造的基座1的凹槽构成。然而也可行的是,兜孔由覆盖板构成,所述覆盖板形成圆形的开口。
基座1借助加热装置21从下方加热,从而使热量流动穿过基座1,进入至基片架2中,流动穿过基片架直至放置在所述基片架2上的基片19,以便使基片表面达到工艺温度,在所述工艺温度中,通过进气元件22馈送的工艺气体在基片表面上分解,从而在那里沉积单晶的层、尤其是III-V层。为此通过进气元件22将载气、例如氢气与III主族元素的金属有机化合物或者V主族元素的氢化物共同馈入。
由覆盖板15′或者基座1的台阶15构成的兜孔的底部构成用于圆盘状的、由石墨制造的基片架2的支承面7。支承面7构成中心的第一径向区域11,螺旋状的导气通道4在所述第一径向区域中延伸,载气通过气体输入管路3馈入所述导气通道中。气体输入管路3为此与基座1内的供给管路18连接。
环形的、更窄的第二径向区域12在第一径向区域11的径向外部延伸,所述第二径向区域基本上由气体收集通道5构成。气体收集通道5可以具有3×3mm的横截面积并且在围绕支承面7的中心Z的圆弧线上延伸。由气体收集通道5构成的第二径向区域12由此包围中心的、圆面状的第一径向区域11,载气馈入所述第一径向区域中,从而形成使基片架保2持悬浮的气垫。
均匀地周向分布的排出通道6从气体收集通道5的底部发源。排出通道6设计为孔并且相互间隔最大10cm、优选最大4cm。构成排出通道的孔的直径处于2至4mm的范围中。所述孔优选具有1mm、优选2.5mm并且优选3mm的最小直径。
第三径向区域13在气体收集通道5的径向外部延伸,所述第三径向区域的径向延伸长度在所述实施例中大于第二径向区域12的径向延伸长度。第三径向区域13的径向延伸尺寸优选为至少5mm。在第三径向区域13的区域中,支承面构成形成间隙边界面10的平面。与该第一间隙边界面10完全一致的面20由基片架2的底侧2′的环形的区域构成。在没有载气通过气体输入管路3馈入并且因此在底侧2′和支承面7之间的区域中没有形成气垫的基础状态中,基片架2的边缘面20平面地并且紧密地放置在间隙边界面10上。第三径向区域13的间隙边界面10优选与供导气通道4在其中延伸的面处于相同的高度中,从而气体收集通道5为由面8、10构成的平面中的凹槽。
如果气体流馈入气体输入管路3上,则所述气体流通过导气通道4而处于旋转中并且将基片架2抬高,其中,所述气体流同时使基片架2围绕其图轴旋转。在按照本发明的应用中或者在按照本发明的方法中,馈入基片架2的底侧2′和支承面7之间的容腔中的气体流的大小设计为,使得在两个间隙边界面10、20中形成具有最大300μm的间隙高度的间隙9。由于排出通道的尺寸设计和数量和第三经常区域13的径向长度,间隙9的流动阻力明显大于构造在排出通道6中的气体排出管路中的流动阻力。差距优选为至少20倍、优选至少50倍。因此百分之90或更多的载气通过由排出通道6构成的管路并且仅有最多百分之10的载气通过间隙9流动到处理室中。
图6所示的第二实施例与图5所示的第一实施例的区别主要在于,排出管路6不是像在第一实施例中那样通入基座1的背侧14,而是通入周向壁15′中。
图7所示的第三实施例与图5所示的第一实施例的区别主要在于,排出通道6通入基座1的朝向处理室的上侧17中,其中,排出通道6的通入部沿着通过处理室的流动方向S布置在支承位置7下游。
图4示出了基座1的实施例,其中,支承位置7的径向最外侧的周向壁由半圆状的台阶15构成,所述台阶与基座1的构成支承面7的部分以材料相同的方式连接。设置有未示出的覆盖板,所述覆盖板构成半圆形的台阶并且所述覆盖板使构成支承面7的兜孔的壁在径向向内的那侧上完整。
在图9所示的实施例中,基座1具有基本上呈平面的宽侧面。兜孔的壁在此由未示出的覆盖板的弧形的壁构成。覆盖板放置在基座的宽侧面上。支承面7也在该平面中延伸。
在图10所示的实施例中,构成支承面7的兜孔的径向向内的壁由基座1的径向内部的底座构成,所述底座与基座1的构成支承面7的区域材料相同地连接。支承兜孔的径向外部的壁在此由未示出的覆盖板构成。
图11所示的实施例中,支承面7的边缘面10、20或者基片架2的底侧2′具有啮合进彼此中的结构24、25。所述结构优选为构成迷宫式密封的环形的结构。在所述实施例中设置有啮合进环形槽25中的肋24。肋24可以由两个面10、20的其中一个构成。环形槽则分别由另一个面20、10构成。在所述实施例中,肋24从支承面7发源并且环形槽25被加工到基片架2的底侧2′中。肋24和环形槽25在所述实施例中布置在气体收集通道5的径向外部。基片架2位于由覆盖板15′构成的兜孔中。
前述实施方案用于阐述本申请在总体上包含的发明,所述发明至少通过以下特征组合分别独立地对现有技术进行扩展设计,其中,两个、多个或者所有这些特征组合也能够相结合,即:
一种基座,其特征在于,排出通道6的横截面和间隙9的径向长度的尺寸设计为,使得通过气体排出管路6的气体体积流量大于通过具有300μm的间隙高度的间隙的气体体积流量。
一种基座,其特征在于,圆形的面相对于中心Z具有至少5mm的径向长度并且排出通道6为至少四个孔,所述孔具有至少2mm、优选至少4mm的直径。
一种基座,其特征在于,第三径向区域13由具有至少4mm的径向长度的圆环形的、闭合的面10构成,所述面沿着径向向内的方向邻接在由凹槽构成的气体收集通道5上,尤其至少四个排出通道6从所述收集通道发源,所述至少四个排出通道在支承面7之外通入并且尤其是直径为至少2mm、优选至少3mm的孔。
一种基座,其特征在于,支承位置7沿着径向向外的方向被台阶15或者覆盖板15′限定和/或面10是平的。
一种基座,其特征在于,所述排出通道6在与支承面7相互对置的背侧14、边缘侧(16)中或者在支承面7的下游通入基座1的构成支承面7的宽侧17中。
一种基座,其特征在于,排出通道6的直径和数量选择为满足以下关系式:
其中,r:排出通道(6)的半径,la:排出通道(6)的长度,n:排出通道(6)的数量,d:第三边缘区域(13)的直径,ls:间隙(9)的径向长度,h:间隙(9)的最大高度,其中,关系式的左侧优选为所述关系式的右侧的至少十倍、进一步优选至少二十倍并且特别优选至少五十倍。
一种基座装置,所述基座装置由根据前述权利要求之一所述的基座1和旋转支承在支承面7上的基片架2构成,其中,基片架2具有圆盘形的形状并且在与第三径向区域13完全一致地延伸的径向外部区域中具有环形的、尤其是平面的边缘面20,所述边缘面与第三径向区域13的面10共同限定间隙9,所述间隙具有恒定的间隙高度。
一种基座或者基座装置,其特征在于,限定间隙9的面10、20不具有其它气体排出管路,而是由两个完全一致的、闭合的环形面构成。
一种基座或者基座装置,其特征在于,构成支承面7的径向外部边缘的面10和基片架2的与所述面对应的边缘面20具有啮合进彼此中的环形的结构,所述环形的结构尤其设计为啮合进环形槽25中的环形的肋24。
一种应用,其特征在于,馈入支承面7和基片架2的底侧2′之间的容腔中的气体流产生压力,所述压力使基片架保持悬浮并且产生小于300μm并且优选处于50或者100μm与250μm之间的范围中的间隙高度。
一种CVD反应器,其特征在于,基座1和基片架2根据前述权利要求1至9之一所述地设计。
所有的公开的技术特征(本身或者以不同方式的组合)都对本发明是重要的。在本申请的公开文件中还将所属/所附优先权文件(在先申请文本)的公开内容全部包含,而且为此目的还将该文件的特征包含在本申请的权利要求中。从属权利要求以其特征即使在不具有被引用的权利要求的技术特征时也能表征现有技术的独有的创造性的改进方案,尤其用于基于该技术特征采取分案申请。每项权利要求中所给出的发明可以另外具有在前述说明中尤其设有附图标记和/或在附图标记列表中给出的一个或多个特征。本发明还涉及没有实现在前述说明书中所述的特征中的各个单独特征的设计形式,尤其如果所述特征针对相应的用途明显不是必要的或者能够通过其它在技术上起相同作用的方式代替。
附图标记列表
1 基座
2 基片架
2′ 底侧
3 气体输入管路
4 导气通道
5 气体收集通道
6 排出通道
7 支承面
8 间隙
9 间隙
10 面
11 第一径向区域
12 第二径向区域
13 第三径向区域
14 背侧
15 台阶
15′ 覆盖板
16 边缘侧
17 上侧
18 供给管路
18′ 供给管路
19 基片
20 边缘面
21 加热装置
22 进气元件
23 壳体
24 肋
25 环形槽
S 流动方向
Z 中心
Claims (12)
1.一种基座,具有
至少一个带有圆形的基本轮廓的支承面(7),所述支承面用于围绕所述支承面(7)的中心(Z)旋转支承圆盘状的基片架(2),
其中,所述支承面(7)具有第一径向区域(11),
至少一个气体分配通道(4)在所述第一径向区域中延伸,气体输入管路(3)通入所述气体分配通道中,
第二径向区域(12),所述第二径向区域相对于中心(Z)在径向上与第一径向区域(11)错开并且所述第二径向区域构成具有一个或者多个排出通道(6)的气体排出管路,
和
第三径向区域(13),所述第三径向区域包围第一径向区域(11)和第二径向区域(12)并且在支承面(7)和基片架(2)之间构成直接邻接在支承面(7)的径向外部边缘上的间隙(9),
其中,所述径向区域(11、12、13)设计为,
使得在第一径向区域(11)中通过气体输入管路(3)馈入的气体流在支承面(7)和基片架(2)的底侧(2′)之间的容腔中产生压力,所述压力使基片架(2)保持悬浮并且所述压力通过气体排出管路(6)并且通过间隙(9)离开所述容腔,其特征在于,排出通道(6)的横截面积和间隙(9)的径向长度的尺寸设计为,使得通过气体排出管路(6)的气体体积流量大于通过具有300μm的间隙高度的间隙(9)的气体体积流量。
2.一种基座,具有
至少一个带有圆形的基本轮廓的支承面(7),所述支承面用于围绕所述支承面(7)的中心(Z)旋转支承圆盘状的基片架(2),其中,所述支承面(7)具有第一径向区域(11),
至少一个气体分配通道(4)在所述第一径向区域中延伸,气体输入管路(3)通入所述气体分配通道中,
第二径向区域(12),所述第二径向区域相对于中心(Z)在径向上与第一径向区域(11)错开并且所述第二径向区域具有由凹槽构成的气体收集通道(5),排出通道(6)从所述气体收集通道发源,并且在支承面(7)之外通入,
和
第三径向区域(13),所述第三径向区域形成包围第一径向区域(11)和第二径向区域(12)的、圆形的、闭合的并且构成所述支承面(7)的径向外部边缘的面(10),所述面沿着径向向内的方向
邻接在气体收集通道(5)上,
其特征在于,
所述圆形的面相对于中心(Z)具有至少4mm的径向长度并且排出通道(6)为至少四个孔,所述孔具有至少2mm、优选至少3mm的直径。
3.根据权利要求1所述的基座,其特征在于,所述第三径向区域(13)由具有至少4mm的径向长度的、圆环形的、闭合的面(10)构成,所述面沿着径向向内的方向邻接在由凹槽构成的气体收集通道(5)上,尤其至少四个排出通道(6)从所述气体收集通道发源,所述至少四个排出通道在支承面(7)之外通入并且尤其是直径为至少2mm、优选至少3mm的孔。
4.根据前述权利要求之一所述的基座,其特征在于,支承位置(7)沿着径向向外的方向被台阶(15)或者覆盖板(15′)限定和/或所述面(10)是平的。
5.根据前述权利要求之一所述的基座,其特征在于,所述排出通道(6)在与支承面(7)相互对置的背侧(14)、边缘侧(16)中或者在支承面(7)的下游通入基座(1)的构成支承面(7)的宽侧(17)中。
7.一种基座装置,所述基座装置由根据前述权利要求之一所述的基座(1)和旋转支承在支承面(7)上的基片架(2)构成,其中,所述基片架(2)具有圆盘形的形状并且至少在与第三径向区域(13)完全一致地延伸的径向外部的区域中具有环形的、尤其是平面的边缘面(20),所述边缘面与第三径向区域(13)的面(10)共同限定间隙(9),所述间隙具有恒定的间隙高度。
8.根据前述权利要求之一所述的基座或者基座装置,其特征在于,限定间隙(9)的面(10、20)不具有其它气体排出管路,而是由两个完全一致的、闭合的环形面构成。
9.根据前述权利要求之一所述的基座或者基座装置,其特征在于,构成支承面(7)的径向外部边缘的面(10)和基片架(2)的与所述面对应的边缘面(20)具有啮合进彼此中的环形的结构,所述环形的结构尤其设计为啮合进环形槽(25)中的环形的肋(24)。
10.一种根据前述权利要求之一所述的基座或基座装置在CVD反应器中的应用,其特征在于,馈入支承面(7)和基片架(2)的底侧(2′)之间的容腔中的气体流产生压力,所述压力使基片架保持悬浮并且产生小于300μm并且优选处于50或者100μm和250μm之间的范围中的间隙高度。
11.一种CVD反应器,所述CVD反应器具有:布置在壳体(23)中的处理室;通入所述处理室中的用于将工艺气体馈入处理室中的进气元件(22);构成所述处理室的底部的具有至少一个支承面(7)的基座(1),所述至少一个支承面支承基片架(2);和用于加热基座(1)和至少一个由基座(1)承载的基片架(2)的加热装置(21),其特征在于,所述基座(1)和所述基片架(2)根据权利要求1至9之一所述地设计。
12.一种基座、基座装置、应用或者CVD反应器,其特征在于,具有前述权利要求之一所述的一个或多个特定技术特征。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102018131751.4A DE102018131751A1 (de) | 2018-12-11 | 2018-12-11 | Suszeptor eines CVD-Reaktors |
DE102018131751.4 | 2018-12-11 | ||
PCT/EP2019/083925 WO2020120298A1 (de) | 2018-12-11 | 2019-12-06 | Suszeptor eines cvd-reaktors |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113383110A true CN113383110A (zh) | 2021-09-10 |
CN113383110B CN113383110B (zh) | 2024-05-14 |
Family
ID=
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080210169A1 (en) * | 2005-07-21 | 2008-09-04 | Lpe S.P.A. | System for Supporting and Rotating a Susceptor Inside a Treatment Chamber of a Wafer Treating Apparatus |
US20120204796A1 (en) * | 2009-10-16 | 2012-08-16 | Francisco Ruda Y Witt | CVD reactor having a substrate holder resting on a gas cushion comprising a plurality of zones |
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080210169A1 (en) * | 2005-07-21 | 2008-09-04 | Lpe S.P.A. | System for Supporting and Rotating a Susceptor Inside a Treatment Chamber of a Wafer Treating Apparatus |
US20120204796A1 (en) * | 2009-10-16 | 2012-08-16 | Francisco Ruda Y Witt | CVD reactor having a substrate holder resting on a gas cushion comprising a plurality of zones |
Also Published As
Publication number | Publication date |
---|---|
DE102018131751A1 (de) | 2020-06-18 |
JP2022512210A (ja) | 2022-02-02 |
TW202035779A (zh) | 2020-10-01 |
EP3894612A1 (de) | 2021-10-20 |
KR20210099117A (ko) | 2021-08-11 |
US20220074047A1 (en) | 2022-03-10 |
WO2020120298A1 (de) | 2020-06-18 |
JP7458400B2 (ja) | 2024-03-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6797069B2 (en) | Gas driven planetary rotation apparatus and methods for forming silicon carbide layers | |
EP2215282B1 (en) | Chemical vapor deposition reactor | |
US20120204796A1 (en) | CVD reactor having a substrate holder resting on a gas cushion comprising a plurality of zones | |
US6569250B2 (en) | Gas-driven rotation apparatus and method for forming silicon carbide layers | |
JP7458400B2 (ja) | Cvdリアクタのサセプタ | |
CN110603344B (zh) | 用于cvd反应器的基座及其应用以及基板支架装置 | |
TWI827612B (zh) | 具有用於基板搬運之支承環的cvd反應器以及支承環在cvd反應器上的應用 | |
WO2014143703A1 (en) | Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems | |
US7235139B2 (en) | Wafer carrier for growing GaN wafers | |
CN113169023B (zh) | 用于cvd反应器的屏蔽板 | |
CN112513327A (zh) | 用于测量cvd反应器中的基座的表面温度的装置 | |
CN114464519B (zh) | 抽气环及半导体处理装置 | |
CN112424394A (zh) | 用于覆盖用于SiC层沉积的装置的基座的指向过程室的侧面的盖板 | |
CN113383110B (zh) | Cvd反应器的基座 | |
TW202213616A (zh) | 用於cvd反應器之運輸環 | |
TW202236477A (zh) | 具有在前置區上升之製程室底部的cvd反應器 | |
CN218812237U (zh) | 一种提高成膜质量的进气结构 | |
TW202122624A (zh) | Cvd反應器之出氣元件 | |
CN115821376A (zh) | 一种提高成膜质量的进气结构 | |
CN115200365A (zh) | 一种具有对称导流结构的烧结装置 | |
KR20120050707A (ko) | 서셉터 및 이를 구비하는 화학 기상 증착 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant |