CN118053904A - 具有鳍状结构和纳米板的晶体管及其制作方法 - Google Patents

具有鳍状结构和纳米板的晶体管及其制作方法 Download PDF

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CN118053904A
CN118053904A CN202211510465.2A CN202211510465A CN118053904A CN 118053904 A CN118053904 A CN 118053904A CN 202211510465 A CN202211510465 A CN 202211510465A CN 118053904 A CN118053904 A CN 118053904A
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epitaxial layer
fin structure
nano
source
plate
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吴庆应
林育名
黄正同
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United Microelectronics Corp
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United Microelectronics Corp
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Abstract

本发明公开一种具有鳍状结构和纳米板的晶体管及其制作方法，具有鳍状结构和纳米板的晶体管包含一鳍状结构，一第一栅极元件设置在鳍状结构上，一第一源极/漏极层设置于第一栅极元件的一侧，其中第一源极/漏极层设置于鳍状结构上并且延伸至鳍状结构中，一第二源极/漏极层设置于第一栅极元件的另一侧，其中第二源极/漏极层设置于鳍状结构上并且延伸至鳍状结构中，一纳米板设置于第一栅极元件的上方，纳米板位于第一源极/漏极层和第二源极/漏极层之间，并且纳米板接触第一源极/漏极层与接触第二源极/漏极层以及一第二栅极元件围绕纳米板。

Description

具有鳍状结构和纳米板的晶体管及其制作方法
技术领域
本发明涉及一种可提高电流密度的晶体管结构及其制作方法，特别是涉及一种利用鳍状结构和纳米板提高电流密度(current density)的晶体管及其制作方法。
背景技术
金属氧化物半导体(metal-oxide semiconductor,MOS)晶体管是电子产品中最重要的一种基本电子单元。随着电子产品的体积不断小型化，对MOS晶体管的要求趋向小尺寸、高操作速度以及高稳定性。在MOS晶体管中，电流密度影响晶体管的操作速度与稳定性。其中电流密度与栅极的宽度成正比，而与栅极的长度成反比。因此，现有一种提升晶体管的电流密度的方法为增加栅极的有效宽度(effective width)，由于晶体管的电流密度及其速度与晶体管的栅极宽度成正比，因此较快的晶体管通常需要更大的栅极宽度，也就代表更大的元件尺寸。然而，随着半导体元件体积不断变小，需要开发出同时具有高电流密度并且小尺寸的晶体管的结构。
发明内容
有鉴于此，本发明提供一种利用鳍状结构和纳米板提高电流密度的晶体管及其制作方法。
根据本发明的一优选实施例，一种具有鳍状结构和纳米板的晶体管包含一第一鳍状结构，一第一栅极元件设置在第一鳍状结构上，一第一源极/漏极层设置于第一栅极元件的一侧，其中第一源极/漏极层设置于第一鳍状结构上并且延伸至第一鳍状结构中，一第二源极/漏极层设置于第一栅极元件的另一侧，其中第二源极/漏极层设置于第一鳍状结构上并且延伸至第一鳍状结构中，一第一纳米板设置于第一栅极元件的上方，第一纳米板位于第一源极/漏极层和第二源极/漏极层之间，并且第一纳米板接触第一源极/漏极层以及接触第二源极/漏极层以及一第二栅极元件围绕第一纳米板。
根据本发明的一优选实施例，一种具有鳍状结构和纳米板的晶体管的制作方法包含提供一鳍状结构，其中一虚置栅极设置在鳍状结构上，两个间隙壁设置在虚置栅极的两侧，一第一埋入式外延层和一第二埋入式外延层分别设置于虚置栅极两侧的鳍状结构中，接着依序形成一第一外延层和一第二外延层覆盖鳍状结构和虚置栅极，然后形成两个第一掩模层，各个第一掩模层分别包覆第一埋入式外延层正上方的第一外延层和第二外延层以及包覆第二埋入式外延层正上方的第一外延层和第二外延层，之后以等第一掩模层为掩模，移除部分的第二外延层和部分的第一外延层，使得剩余的第二外延层形成一纳米板并且曝露出虚置栅极，接续移除虚置栅极以在间隙壁之间形成一凹槽，然后形成一第二栅极介电层包覆纳米板以及形成一第一栅极介电层覆盖凹槽，接续形成一第一栅极元件和一第二栅极元件，其中第一栅极元件填入凹槽，第二栅极元件包覆盖纳米板，接着在形成第一栅极元件后，形成一栅极电极填满两个第一掩模层之间的空间，最后移除两个第一掩模层。
为让本发明的上述目的、特征及优点能更明显易懂，下文特举优选实施方式，并配合所附的附图，作详细说明如下。然而如下的优选实施方式与附图仅供参考与说明用，并非用来对本发明加以限制者。
附图说明
图1至图9为本发明的第一优选实施例所绘示的一种具有鳍状结构和纳米板的晶体管的制作方法的示意图；
图10为图9中沿切线AA’所绘示的侧视图；
图11为本发明的第二优选实施例所绘示一种具有鳍状结构和纳米板的晶体管的示意图；
图12为本发明的第三优选实施例所绘示一种具有鳍状结构和纳米板的晶体管的示意图。
符号说明
10:多晶硅栅极
12:栅极介电层
14:第一外延层
16:第二外延层
18a:第一掩模层
18b:第二掩模层
20:凹槽
C1:第一沟道
C2:第二沟道
DG:虚置栅极
E1:第一栅极介电层
E2:第二栅极介电层
F1:鳍状结构
F2:鳍状结构
M:第一源极/漏极层
M1:第一埋入式外延层
M2:第一源极/漏极下外延层
M3:第一源极/漏极上外延层
MG:栅极电极
N:第二源极/漏极层
N1:第二埋入式外延层
N2:第二源极/漏极下外延层
N3:第二源极/漏极上外延层
NS1:纳米板
NS2:纳米板
S:间隙壁
T1:具有鳍状结构和纳米板的晶体管
T2:具有鳍状结构和纳米板的晶体管
T3:具有鳍状结构和纳米板的晶体管
WF1:第一栅极元件
WF2:第二栅极元件
具体实施方式
图1至图9为根据本发明的第一优选实施例所绘示的一种具有鳍状结构和纳米板的晶体管的制作方法。图10为图9中沿切线AA’所绘示的侧视图。
如图1所示，提供一鳍状结构F1，一虚置栅极DG设置在鳍状结构F1上，两个间隙壁S分别设置在虚置栅极DG的两侧，一第一埋入式外延层M1和一第二埋入式外延层N1分别设置于虚置栅极DG两侧的鳍状结构F1中，虚置栅极DG可以包含一多晶硅栅极10和一栅极介电层12设置于多晶硅栅极10和鳍状结构F1之间。鳍状结构F1可以为半导体材料，例如硅、锗、砷化镓、硅锗、磷化铟等。如图2所示，依序形成一第一外延层14和一第二外延层16覆盖鳍状结构F1和虚置栅极DG，第一外延层14接触第一埋入式外延层M1的上表面和第二埋入式外延层N1的上表面，此时虚置栅极DG被包覆在第一外延层14和第二外延层16之中。
如图3所示，同时形成两个第一掩模层18a和一第二掩模层18b，第一掩模层18a和第二掩模层18b可以为光致抗蚀剂、氮化硅、氮氧化硅，各个第一掩模层18a分别包覆第一埋入式外延层M1正上方的第一外延层14和第二外延层16以及包覆第二埋入式外延层N1正上方的第一外延层14和第二外延层16，详细来说第二外延层16的上表面和侧壁接触第一掩模层18a，第一外延层14只有侧壁接触第一掩模层18a，在两个第一掩模18a之间有一部分的第一外延层14和第二外延层16未被第一掩模18a覆盖，第二掩模层18b覆盖位于虚置栅极DG正上方的第二外延层16，其中第二掩模层18b连接两个第一掩模层18a，第二掩模层18b位于第二外延层16的上表面的中间使得第二外延层16的两个末端曝露出来，并且第一外延层14的侧壁和第二外延层16的侧壁都不接触第二掩模层18b。
如图4所示，以第一掩模层18a和第二掩模层18b为掩模，薄化第一外延层14和第二外延层16，薄化的方式较佳使用等离子体蚀刻，在蚀刻的过程中第二掩模层18b会被完全损耗，至使原本被第二掩模层18b覆盖第二外延层16也会被部分蚀刻，在完成薄化后，此时第一外延层14和第二外延层16都呈平板状。如图5所示，以第一掩模层18a为掩模，利用湿蚀刻完全移除未被第一掩模层18a覆盖的第一外延层14，使得剩余的第二外延层16形成一纳米板NS1并且曝露出虚置栅极DG和间隙壁S。由于需用湿蚀刻移除第一外延层14但保留第二外延层16，因此第一外延层14的材料和第二外延层16的材料需不同，另外，请参阅图10，此时余留在第一埋入式外延层M1上的第一外延层14成为一第一源极/漏极下外延层M2，余留在第二埋入式外延层N1上的第一外延层14成为一第二源极/漏极下外延层N2，余留在第一埋入式外延层M1正上方的第二外延层16成为一第一源极/漏极上外延层M3，余留在第二埋入式外延层N1上的第二外延层16成为一第二源极/漏极上外延层N3。
如图6所示，利用另一次湿蚀刻移除虚置栅极DG以在两个间隙壁S之间形成一凹槽20，如图7所示，同时形成一第一栅极介电层E1和一第二栅极介电层E2，第二栅极介电层E2包覆纳米板NS1，第一栅极介电层E1顺应地覆盖凹槽20，之后再同时接着同时形成一第一栅极元件WF1和一第二栅极元件WF2分别覆盖第一栅极介电层E1和第二栅极介电层E2，请参考图10以获得第一栅极介电层E1和第二栅极介电层E2的详细位置，由于是同时形成第一栅极介电层E1和第二栅极介电层E2，所以第一栅极介电层E1和第二栅极介电层E2的材料相同，第一栅极介电层E1和第二栅极介电层E2包含氧化硅、氧化锗、氧化铪等介电层材料，第一栅极元件WF1填入凹槽20，第二栅极元件WF2包覆纳米板NS1，第一栅极元件WF1和第二栅极元件WF2的材料相同，第一栅极元件WF1和第二栅极元件WF2在本发明的晶体管中将作为功函数层。
如图8所示，形成一栅极电极MG填满第一掩模层18a之间的空间，如图9所示，完全移除第一掩模层18a。此时本发明的具有鳍状结构和纳米板的晶体管T1业已完成。上述本发明的制作工艺适用于制作P型晶体管和N型晶体管，若是要制作P型晶体管，则第一埋入式外延层M1和第二埋入式外延层N1较佳使用硅锗，第一外延层14较佳使用硅锗掺杂硼，第二外延层16较佳使用锗，第一栅极元件WF1和第二栅极元件WF2包含WN、RuN、MoN、TiN、TaN、WC、TaC、TiC、TiAlN或TaAlN；若是要制作N型晶体管，则第一埋入式外延层M1和第二埋入式外延层N1较佳使用磷化硅，第一外延层14较佳使用硅锗掺杂磷，第二外延层16较佳使用锗，第一栅极元件WF1和第二栅极元件WF2包含TiN或TaN。
图10所绘示的本发明的一种具有鳍状结构和纳米板的晶体管，图10为图9中沿切线AA’所绘示的侧视图，其中具有相同功能和位置的元件，将使用图9中的元件标号。
如图10所示，一种具有鳍状结构和纳米板的晶体管T1包含一鳍状结构F1，一第一栅极元件WF1设置在鳍状结构F1上，一第一栅极介电层E1设置于鳍状结构F1和第一栅极元件WF1之间，第一栅极介电层E1较佳呈U型，两个间隙壁S分别设置于第一栅极元件WF1的两侧，一第一源极/漏极层M设置于第一栅极元件WF1的一侧，其中第一源极/漏极层M设置于鳍状结构F1上并且延伸至鳍状结构F1中，详细来说第一源极/漏极层M包含一第一埋入式外延层M1、一第一源极/漏极下外延层M2和第一源极/漏极上外延层M3由下至上堆叠，第一埋入式外延层M1埋入于鳍状结构F1，第一源极/漏极下外延层M2设置于鳍状结构F1的上表面之上并且接触第一埋入式外延层M1，第一源极/漏极上外延层M3设置于第一源极/漏极下外延层M2上并且接触第一源极/漏极下外延层M2。一第二源极/漏极层N设置于第一栅极元件WF1的另一侧，其中第二源极/漏极层N设置于鳍状结构F1上并且延伸至鳍状结构F1中，详细来说第二源极/漏极层N包含一第二埋入式外延层N1、一第二源极/漏极下外延层N2和第二源极/漏极上外延层N3由下至上堆叠，第二埋入式外延层N1埋入于鳍状结构F1，第二源极/漏极下外延层N2设置于鳍状结构F1的上表面之上并且接触第二埋入式外延层N2，第二源极/漏极上外延层N3设置于第二源极/漏极下外延层N2上并且接触第二源极/漏极下外延层N2。一纳米板NS1设置于第一栅极元件WF1的上方，纳米板NS1位于第一源极/漏极层M和第二源极/漏极层N之间，并且纳米板NS1接触第一源极/漏极层M以及接触第二源极/漏极层N，纳米板NS1和第一源极/漏极上外延层M1以及第二源极/漏极上外延层M2相连，一第二栅极介电层E2围绕并接触纳米板NS1，一第二栅极元件WF2围绕纳米板NS1并且接触第二栅极介电层E2，一栅极电极MG设置于第一源极/漏极层M和第二源极/漏极层N之间，栅极电极MG接触第一栅极元件WF1和第二栅极元件WF2。此外，第一源极/漏极下外延层M2的材料和第一源极/漏极上外延层M3的材料不同。第一栅极元件WF1和第二栅极元件WF2在具有鳍状结构和纳米板的晶体管T1作为功函数层，栅极电极MG则作为外接栅极电压的电极。
当具有鳍状结构和纳米板的晶体管T1为P型晶体管，第一埋入式外延层M1和第二埋入式外延层N1较佳为硅锗，第一源极/漏极下外延层M2和第一源极/漏极下外延层N2较佳硅锗掺杂硼，第一源极/漏极上外延层M3和第二源极/漏极上外延层N3较佳为锗；当具有鳍状结构和纳米板的晶体管T1为N型晶体管，第一埋入式外延层M1和第二埋入式外延层N1较佳为磷化硅，第一源极/漏极下外延层M2和第一源极/漏极下外延层N2较佳为硅锗掺杂磷，第一源极/漏极上外延层M3和第二源极/漏极上外延层N3较佳为锗。
当在栅极电极MG外加偏压使具有鳍状结构和纳米板的晶体管T1开启时，会建立两条沟道(channel)，第一沟道C1位于第一埋入式外延层M1和第二埋入式外延层M2之间的鳍状结构F1中，第二沟道C2位于第一源极/漏极上外延层M3和第二源极/漏极上外延层N3之间的纳米板NS1中，也就是说在第一源极/漏极层M和第二源极/漏极层N之间会同时形成二条沟道，因此相较于传统的鳍状晶体管，本发明的具有鳍状结构和纳米板的晶体管T1可以提升电流密度。
图11为根据本发明的第二优选实施例所绘示一种具有鳍状结构和纳米板的晶体管，其中具有相同功能和位置的元件，将使用图9中的元件标号。如图11所示，具有鳍状结构和纳米板的晶体管T2有两个纳米板NS1/NS2，纳米板NS2设置在纳米板NS1上，并且纳米板NS2接触第一源极/漏极层M以及接触第二源极/漏极层N，详细来说纳米板NS2接触第一源极/漏极上外延层M3和第二源极/漏极上外延层N3。
图12为根据本发明的第三优选实施例所绘示一种具有鳍状结构和纳米板的晶体管。请参阅图9，在图9中沿着Y方向可以有多个鳍状结构，Y方向和鳍状结构F1的延伸方向垂直，如图12所示，图12中的具有鳍状结构和纳米板的晶体管T3和图9的具有鳍状结构和纳米板的晶体管T1的不同之处在于图12中有鳍状结构F2，鳍状结构F2和鳍状结构F1平行，第一栅极元件WF1延伸至鳍状结构F2，第二栅极元件WF2延伸至鳍状结构F2以及纳米板NS1延伸至第二鳍状结构F1上，第一源极/漏极层(图未示)延伸至鳍状结构F2，第二源极/漏极层延伸至鳍状结构F2(图未示)。
以上所述仅为本发明的优选实施例，凡依本发明权利要求所做的均等变化与修饰，都应属本发明的涵盖范围。

Claims (14)

1.一种具有鳍状结构和纳米板的晶体管，包含：
第一鳍状结构；
第一栅极元件，设置在该第一鳍状结构上；
第一源极/漏极层，设置于该第一栅极元件的一侧，其中该第一源极/漏极层设置于该第一鳍状结构上并且延伸至该第一鳍状结构中；
第二源极/漏极层，设置于该第一栅极元件的另一侧，其中该第二源极/漏极层设置于该第一鳍状结构上并且延伸至该第一鳍状结构中；
第一纳米板，设置于该第一栅极元件的上方，该第一纳米板位于该第一源极/漏极层和该第二源极/漏极层之间，并且该第一纳米板接触该第一源极/漏极层以及接触该第二源极/漏极层；以及
第二栅极元件，围绕该第一纳米板。
2.如权利要求1所述的具有鳍状结构和纳米板的晶体管，还包含栅极电极设置于该第一源极/漏极层和该第二源极/漏极层之间，该栅极电极接触该第一栅极元件和该第二栅极元件。
3.如权利要求1所述的具有鳍状结构和纳米板的晶体管，其中该第一源极/漏极层包含第一埋入式外延层埋入于该第一鳍状结构、第一源极/漏极下外延层设置于该第一鳍状结构的上表面之上以及第一源极/漏极上外延层设置于该第一源极/漏极下外延层上，该第二源极/漏极层包含第二埋入式外延层埋入于该第一鳍状结构、第二源极/漏极下外延层设置于该第一鳍状结构的上表面之上以及第二源极/漏极上外延层设置于该第二源极/漏极下外延层上。
4.如权利要求3所述的具有鳍状结构和纳米板的晶体管，其中该第一纳米板和该第一源极/漏极上外延层以及该第二源极/漏极上外延层相连。
5.如权利要求3所述的具有鳍状结构和纳米板的晶体管，其中该第一源极/漏极下外延层的材料和该第一源极/漏极上外延层的材料不同。
6.如权利要求3所述的具有鳍状结构和纳米板的晶体管，其中该具有鳍状结构和纳米板的晶体管为P型晶体管，该第一埋入式外延层为硅锗(silicon germanium)，该第一源极/漏极下外延层为硅锗掺杂硼，该第一源极/漏极上外延层为锗。
7.如权利要求3所述的具有鳍状结构和纳米板的晶体管，其中该具有鳍状结构和纳米板的晶体管为N型晶体管，该第一埋入式外延层为磷化硅(silicon phosphorus)，该第一源极/漏极下外延层为硅锗掺杂磷，该第一源极/漏极上外延层为锗。
8.如权利要求1所述的具有鳍状结构和纳米板的晶体管，还包含第二鳍状结构，该第二鳍状结构和该第一鳍状结构平行，其中：
该第一栅极元件延伸至该第二鳍状结构；以及
该第一纳米板延伸至该第二鳍状结构上。
9.如权利要求1所述的具有鳍状结构和纳米板的晶体管，还包含：
第一栅极介电层，设置于该第一鳍状结构和该第一栅极元件之间；
第二栅极介电层，设置于该第一纳米板和该第二栅极元件之间；以及
两个间隙壁，分别设置于该第一栅极元件的两侧。
10.如权利要求1所述的具有鳍状结构和纳米板的晶体管，还包含：第二纳米板设置在该第一纳米板上，并且该第二纳米板接触该第一源极/漏极层以及接触该第二源极/漏极层。
11.一种具有鳍状结构和纳米板的晶体管的制作方法，包含：
提供鳍状结构，其中虚置栅极设置在该鳍状结构上，两个间隙壁设置在该虚置栅极的两侧，第一埋入式外延层和第二埋入式外延层分别设置于该虚置栅极两侧的该鳍状结构中；
依序形成第一外延层和第二外延层覆盖该鳍状结构和该虚置栅极；
形成两个第一掩模层，各该第一掩模层分别包覆该第一埋入式外延层正上方的该第一外延层和该第二外延层以及包覆该第二埋入式外延层正上方的该第一外延层和该第二外延层；
以该两个第一掩模层为掩模，移除部分的该第二外延层和部分的该第一外延层，使得剩余的该第二外延层形成纳米板并且曝露出该虚置栅极；
移除该虚置栅极以在该两个间隙壁之间形成凹槽；
形成第二栅极介电层包覆该纳米板以及形成第一栅极介电层覆盖该凹槽；
形成第一栅极元件和第二栅极元件，其中该第一栅极元件填入该凹槽，该第二栅极元件包覆盖该纳米板；
在形成该第一栅极元件后，形成栅极电极填满该两个第一掩模层之间的空间；以及
移除该两个第一掩模层。
12.如权利要求11所述的具有鳍状结构和纳米板的晶体管的制作方法，还包含：在形成该两个第一掩模层的同时，形成第二掩模层覆盖位于该虚置栅极正上方的该第二外延层，其中该第二掩模层连接该两个第一掩模层，该第二掩模层位于该第二外延层的上表面的中间使得该第二外延层的两个末端曝露出来。
13.如权利要求12所述的具有鳍状结构和纳米板的晶体管的制作方法，其中形成该纳米板的步骤包含：
以该两个第一掩模层和该第二掩模层为掩模，薄化该第一外延层和该第二外延层；以及
在薄化该第一外延层和该第二外延层后，以该两个第一掩模层为掩模，利用湿蚀刻移除部分的该第二外延层以形成该纳米板。
14.如权利要求11所述的具有鳍状结构和纳米板的晶体管的制作方法，其中该第一外延层接触第一埋入式外延层和该第二埋入式外延层。
CN202211510465.2A 2022-11-10 2022-11-29 具有鳍状结构和纳米板的晶体管及其制作方法 Pending CN118053904A (zh)

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