CN118038775A - Detection method, pretreatment method and display device of light-emitting diode display panel - Google Patents
Detection method, pretreatment method and display device of light-emitting diode display panel Download PDFInfo
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Abstract
The application belongs to the technical field of display panels, and provides a detection method, a pretreatment method and display equipment of a light-emitting diode display panel. The application preprocesses the LED display panel to form cathode electrodes on the surface of the LED display panel, each cathode electrode corresponds to one pixel unit, and then the detection equipment is used for emitting electron beams to the LED display panel to trigger the pixel units to generate an electron secondary induction signal; the detection device receives the electronic secondary induction signal and detects whether the pixel unit is normal or not based on the electronic secondary induction signal. And furthermore, the crystal of the light-emitting diode display panel does not need to be detected after being transferred in a huge amount, so that the detection time of the light-emitting diode display panel can be effectively shortened, the conventional detection equipment does not need to be improved secondarily, and the detection overhead cost is reduced.
Description
Technical Field
The application belongs to the technical field of display panels, and particularly relates to a detection method, a pretreatment method and display equipment of a light-emitting diode display panel.
Background
MicroLED (Micro LIGHT EMITTING Diode Display) and MiniLED (sub-millimeter light emitting Diode) have the advantages of high brightness, high contrast, high color gamut, high resolution, fast response time, energy saving, low power consumption, etc., and are considered as new directions for displaying revolutionary technologies.
In order to improve and ensure the yield of light emitting diode display panels such as MicroLED and MiniLED, the inspection technology is also another important point. Because of the large number of wafers used in Led display panel products, a large number of small Led wafers need to be inspected and repaired correctly and quickly.
Because the pixel resolution of the display screen of the light-emitting diode display panel is very high, the number of wafers is numerous, if a huge and tiny Led wafer is to be detected and repaired correctly and rapidly, all wafers of the light-emitting diode display panel cannot be detected because of a certain bottleneck in the existing detection means;
In the prior art, the method of inspecting the Led display panel is generally to perform mass transfer and then inspect, and it is assumed that a 4K Led display panel with a resolution of 3840×2160 is taken as an example, and a total of twenty thousands of Led wafers need to be transferred. If the mass transfer speed is not fast enough, the process of transferring the thousands of wafers to the backboard requires days (even weeks) of time;
If the wafer which cannot emit light or the wafer which emits light abnormally is tested after the transfer of a large amount, the abnormal wafer is not displayed any more, so that a plurality of dark spots are displayed, and the display taste and the yield of the LED display panel are seriously reduced.
Disclosure of Invention
In view of the above, embodiments of the present application provide a method for detecting a light emitting diode display panel, a method for preprocessing the same, and a display device, so as to solve the technical problems that the light emitting diode display panel cannot be detected and high cost is required in the current process of producing the light emitting diode display panel
A first aspect of the embodiment of the present application provides a method for detecting a light emitting diode display panel, where the light emitting diode display panel includes a diode display substrate, an LED crystal is disposed on a lower layer of the diode display substrate, an N-type semiconductor layer, a quantum well layer and a P-type semiconductor layer are sequentially disposed on a structure of the LED crystal, and a cathode conductive layer is covered over the N-type semiconductor layer, so that a cathode electrode is formed over a surface of the diode display substrate, each cathode electrode corresponds to one pixel unit, and each pixel unit corresponds to N LED crystals of the light emitting diode display panel, and the method includes:
Emitting electron beams to the light emitting diode display panel, so that the electron beams react with cathode electrodes on the surface of the diode display substrate to trigger the pixel units to generate electron secondary induction signals;
Receiving the electronic secondary induction signal;
And detecting whether the pixel unit is normal or not based on the electronic secondary induction signal.
In one embodiment, the N-type semiconductor layer of the LED crystal is covered with a patterned first insulating layer, wherein the anode conductive layer is provided with a first opening relative to the structure of the LED crystal, and the first opening is deposited on the N-type semiconductor layer of the LED crystal, so that the first insulating layer forms an anode conductive layer with the surface being an anode;
The lower layer of the diode display substrate is provided with a second insulating layer, wherein the cathode conductive layer is provided with a second opening corresponding to the structure of the LED crystal, and the second opening is deposited on the P-type semiconductor layer of the LED crystal, so that the surface of the second insulating layer forms a cathode conductive layer of the cathode electrode.
In one embodiment, the emitting an electron beam to the led display panel, so that the electron beam reacts with a cathode electrode on a surface of the led display substrate to trigger the pixel unit to generate an electron secondary sensing signal, includes:
Emitting an electron beam to the light emitting diode display panel through an electron emitter, so that a cathode electrode led out of the second opening reacts with the electron beam to trigger the pixel unit to generate an electron secondary induction signal;
The receiving the electronic secondary induction signal comprises the following steps:
and receiving the electronic secondary induction signal through an electronic inductor.
In one embodiment, the detecting whether the pixel unit is normal based on the electronic secondary sensing signal includes:
determining a response value of each pixel unit of the light emitting diode display panel based on the secondary sensing signal;
Determining the pixel unit with the response value larger than or equal to a preset response threshold value as a target pixel unit with a normal state;
and determining the pixel units with response values smaller than a preset response threshold as other pixel units with abnormal states.
In one embodiment, the detecting whether the pixel unit is normal based on the electronic secondary sensing signal includes:
the pixel unit generating the electronic secondary induction signal is determined to be a target pixel unit with a normal state;
and determining the pixel units which do not generate the electronic secondary induction signals as other pixel units with abnormal states.
In a second aspect, the present application further provides a pretreatment method of a light emitting diode display panel, where the light emitting diode display panel includes a diode display substrate, an LED crystal is disposed on a lower layer of the diode display substrate, and a structure of the LED crystal is sequentially provided with an N-type semiconductor layer, a quantum well layer and a P-type semiconductor layer, and the pretreatment method includes:
And preprocessing the light-emitting diode display panel to form cathode electrodes on the surface of the light-emitting diode display panel, wherein each cathode electrode corresponds to one pixel unit, and each pixel unit corresponds to n LED crystals of the light-emitting diode display panel.
In one embodiment, the preprocessing the light emitting diode display panel to form a cathode electrode on a surface of the light emitting diode display panel includes:
Manufacturing a first insulating layer at a space position between the substrate surface of the light-emitting diode display panel and the LED crystal structure;
patterning the first insulating layer to form a first opening in the first insulating layer;
Coating a photoresist layer on the first insulating layer, wherein the photoresist layer is deposited on the crystal of the light-emitting diode display panel through the first opening so as to form an anode conductive layer of a common anode structure;
Manufacturing a second insulating layer on the substrate of the light-emitting diode display panel, and depositing a conductive layer film on the second insulating layer;
And irradiating the conductive layer film with a light beam of a specific wavelength to form a second opening at a position of the second insulating layer away from the crystal to form a cathode conductive layer, so that a cathode electrode is formed on the surface of the light emitting diode display panel.
In one embodiment, the fabricating a second insulating layer on the substrate of the light emitting diode display panel, depositing a conductive layer film on the second insulating layer, includes:
and depositing a conductive layer film on the second insulating layer by using a physical vapor deposition method.
In one embodiment, the patterning the first insulating layer to form the first opening in the first insulating layer further includes:
Drying the insulating layer;
the method further comprises the following steps after the first insulating layer is coated with the photoresist layer:
and carrying out wetting treatment on the photoresist layer.
In a third aspect, the present application further provides a display device, where the display device includes a light emitting diode display panel, the light emitting diode display panel includes a diode display substrate, an LED crystal is disposed on a lower layer of the diode display substrate, and a structure of the LED crystal includes an N-type semiconductor layer, a quantum well layer, and a P-type semiconductor layer sequentially disposed;
After the light emitting diode display panel is pretreated by the pretreatment method according to the second aspect, a cathode conductive layer is covered on the N-type semiconductor layer, so that cathode electrodes are formed on the surface of the diode display substrate, and each cathode electrode corresponds to one pixel unit.
The application has the beneficial effects that: preprocessing a light-emitting diode display panel to form cathode electrodes on the surface of the light-emitting diode display panel, wherein each cathode electrode corresponds to one pixel unit, and then using detection equipment to emit electron beams to the light-emitting diode display panel to trigger the pixel units to generate an electron secondary induction signal; the detection device receives the electronic secondary induction signal and detects whether the pixel unit is normal or not based on the electronic secondary induction signal. And furthermore, the crystal of the light-emitting diode display panel does not need to be detected after being transferred in a huge amount, so that the detection time of the light-emitting diode display panel can be effectively shortened, the conventional detection equipment does not need to be improved secondarily, and the detection overhead cost is reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments or the description of the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structure view of a unit device of a related art light emitting diode display panel;
Fig. 2 is a schematic structural diagram of a unit device when a light emitting diode display panel in the prior art is turned on;
fig. 3 is a flowchart of a method for detecting a light emitting diode display panel according to an embodiment of the application;
Fig. 4 is a flow chart of a pretreatment method of a light emitting diode display panel according to a second embodiment of the present application;
Fig. 5 is a schematic diagram showing structural changes of a unit device in a pretreatment process of a light emitting diode display panel according to a second embodiment of the present application;
FIG. 6 is a schematic diagram of one embodiment of the present application for detecting a light emitting diode display panel;
fig. 7 is a cross-sectional view of a pretreated led display panel according to an embodiment of the present application;
FIG. 8 is a plan view of a pretreated LED display panel according to an embodiment of the present application;
reference numerals:
A first insulating layer-10, a first opening-11, a photoresist layer-12;
A second insulating layer-20, a second opening/cathode via-22, a conductive layer film-23;
an N-type semiconductor layer-011, a quantum well layer-012 and a P-type semiconductor layer-013;
cathode-01 and anode-02;
A diode display panel substrate-30, a TFT pixel driving circuit-31, and an array substrate-32; an electron emitter 40.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth such as the particular system architecture, techniques, etc., in order to provide a thorough understanding of the embodiments of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
It should also be understood that the term "and/or" as used in the present specification and the appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes such combinations.
Furthermore, the terms "first," "second," "third," and the like in the description of the present specification and in the appended claims, are used for distinguishing between descriptions and not necessarily for indicating or implying a relative importance.
Reference in the specification to "one embodiment" or "some embodiments" or the like means that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the invention. Thus, appearances of the phrases "in one embodiment," "in some embodiments," "in other embodiments," and the like in the specification are not necessarily all referring to the same embodiment, but mean "one or more but not all embodiments" unless expressly specified otherwise. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless expressly specified otherwise.
It can be understood that the general structure of the light emitting diode display panel (including MicroLED and MiniLED) in the prior art is shown in fig. 1, and the basic structure from bottom to top is: the semiconductor device comprises a substrate, an N-type semiconductor (N-Gan), an electron-hole composite layer (specifically, a quantum well layer MQWS) and a P-type semiconductor (P-Gan), wherein a metal electrode is arranged on the semiconductor layer;
As shown in fig. 2, the micro led display MicroLED unit and the metal electrode pad on the array substrate are connected by solder bonding or conductive paste. The resolution of MicroLED display screen is very high, because the number of wafers of the display panel is huge, the detection means is limited, and all Led wafers cannot be detected, so that the detection is usually carried out after the transfer of a huge amount, if the Led wafers which cannot emit light or the Led wafers which emit light abnormally appear in MicroLED in this time, the Led wafers which are in abnormal states need to be subjected to laser processing, the pixel units related to the Led wafers which are in abnormal states are not displayed any more, and a plurality of dark spots appear in the process of displaying images of the light-emitting diode display panel, so that the display taste and the yield of the light-emitting diode display panel are seriously reduced. At present, no suitable detection method is available for the light emitting diode display panels such as MicroLED and MiniLED.
In view of the above technical problems, the present application provides a method for detecting a light emitting diode display panel, a method for preprocessing the light emitting diode display panel, and a detection device, and a technical scheme of the present application will be described through a specific embodiment.
Example 1
The first embodiment provides a method for detecting a light emitting diode display panel, wherein an execution subject of the method is a general detection device for detecting the display panel, and the detection device at least comprises an electron emitter and an electron sensor.
It can be understood that the Led display panel has innumerable Led wafers (for example MicroLED, using 1-10 μm Led crystals, to realize a display screen with 0.05 mm or smaller size pixel particles, and MiniLED, using tens of μm Led crystals, to realize a display screen with 0.5-1.2 mm pixel particles), and the conventional general detection device cannot effectively detect the display condition of the pixel unit of the Led display panel directly; that is, no suitable detection method is available for the light emitting diode display panels such as MicroLED and MiniLED.
In this embodiment, the light emitting diode display panel may be preprocessed by a manual or machine automated processing manner, so as to form cathode electrodes on the surface of the light emitting diode display panel, where each cathode electrode corresponds to one pixel unit, and each pixel unit corresponds to a plurality of LED crystals of the light emitting diode display panel;
In a specific implementation, in the light-emitting diode display panel of the embodiment, an N-type semiconductor layer of an LED crystal is covered with a first insulating layer subjected to patterning treatment in a pretreatment process, wherein a first opening is formed in an anode conductive layer relative to a structure of the LED crystal, and the first opening is deposited on the N-type semiconductor layer of the LED crystal;
The lower layer of the diode display substrate is provided with a second insulating layer, wherein the cathode conducting layer is provided with a second open pore corresponding to the structure of the LED crystal, and the second open pore is deposited on the P-type semiconductor layer of the LED crystal;
When the light-emitting diode display panel is in bright screen work (for example, the display is connected with a power supply), the cathode of the light-emitting diode has voltage, and after the following pretreatment, the second insulating layer forms a cathode conductive layer with the surface being a cathode electrode, so that the cathode electrode of the P-type semiconductor layer can be led out from the second opening; and the first insulating layer forms an anode conductive layer whose surface is an anode.
Referring to fig. 6, after pretreatment, the second opening may cause the P-type semiconductor layer to leak a small amount of parts, when the led display panel is turned on (the display is powered on), the cathode of the led will have a voltage, and the second insulating layer forms a cathode conductive layer with a cathode electrode on the surface, so that the second opening may lead out the cathode electrode of the P-type semiconductor layer to form a "TFT substrate cathode" shown in fig. 6, and the "TFT substrate cathode" corresponds to the "TFT pixel driving circuit", so that each of the cathode electrodes corresponds to one pixel unit.
Correspondingly, the detection method comprises the following steps:
Step S10, emitting electron beams to the LED display panel, so that the electron beams react with cathode electrodes on the surface of the LED display substrate to trigger the pixel units to generate electron secondary induction signals;
in a specific implementation, the surface of the led display panel to be tested is pretreated to form a cathode electrode, and an electron emitter (e.g., an electron gun) of a testing device with an array testing circuit is used to emit an electron beam to the led display surface, so that the cathode electrode led out from the second opening reacts with the electron beam to trigger a cathode pixel electrode of the led display panel to generate an electron secondary induction signal.
Step S20, receiving the electronic secondary induction signal;
Specifically, the embodiment receives an electronic secondary induction signal through an electronic inductor of the detection device;
It can be understood that, the thin film transistor (Thin Film Transistor, TFT) substrate of the led display panel has different pixel units, and when the electron gun is used to perform the basic array test on the electron beam emitted by the TFT array substrate of the led display panel, each pixel unit under normal conditions has a voltage signal; the voltage signal can induce the electron beam emitted by the electron gun, so as to form an electron secondary induction signal, and the electron secondary induction signal can be reflected to an electron sensor of the detection equipment (the electron sensor can be an independent sensor or a sensor unit of the electron gun);
Step S30, detecting whether the pixel unit is normal or not based on the electronic secondary induction signal.
In an embodiment, the detection device may determine the pixel unit generating the electronic secondary sensing signal as a target pixel unit in a normal state; determining the pixel units which do not generate the electronic secondary induction signals as other pixel units with abnormal states by detection equipment;
It can be understood that if a certain pixel unit in the TFT substrate of the LED display panel fails and has no voltage signal, the electronic sensor of the detecting device cannot receive the electronic secondary sensing signal, so that the pixel units without the electronic signal are abnormal compared with the target pixel units with normal surrounding states, and can be detected, and a tester can determine that the LED crystals related to other pixel units with abnormal states have problems by observing and screening out and re-detecting. The beneficial effects of this embodiment are: the detection method of the application does not need to carry out detection after carrying out massive transfer on the LED crystal of the LED display panel, can effectively shorten the detection time of the LED display panel (such as MicroLED and MiniLED), and can be carried out to complete the detection of the pixel unit of the LED display panel by directly adopting the conventional detection equipment with the array test circuit in the prior art, thus needing no secondary improvement on the conventional detection equipment at present and reducing the detection cost.
Example two
For the light emitting diode display panel in the first embodiment, the second embodiment provides a pretreatment method, which includes pretreating the light emitting diode display panel to form a cathode electrode on the surface of the light emitting diode display panel.
In this embodiment, referring to fig. 4, before the light emitting diode display panel and the TFT signal substrate are aligned, the pretreatment method of the second embodiment is needed to pretreat the light emitting diode display panel, so that the light emitting diode display panel can have a driven cathode and anode, so that the surfaces of the light emitting diode display panels such as MicroLED and MiniLED form a cathode pixel electrode, and the pretreatment method specifically includes the following steps:
step S01, manufacturing a first insulating layer 10 at a space position between the substrate surface of the light emitting diode display panel and the LED crystal structure;
in a specific implementation, after the light-emitting diode display panel is subjected to wafer processing, a chemical reaction is performed at a space position between the substrate surface of the light-emitting diode display panel and the LED crystal structure by using a gaseous substance at a certain temperature, and a silicon-based oxide SiOx deposited film is generated on the surface of the LED crystal structure as an insulating layer.
Step S02, performing patterning treatment on the first insulating layer 10 to form a first opening 11 in the first insulating layer 10;
Step S03, coating a photoresist layer 12 on the first insulating layer 10, where the photoresist is deposited on the crystal of the light emitting diode display panel through the first opening 11, so as to form an anode conductive layer of a common anode structure;
In a specific implementation, as shown in fig. 5, the first insulating layer 10 may be etched to form a first opening 11 in the first insulating layer 10, and the first insulating layer 10 is dried, and then a photoresist is coated on the first insulating layer 10, so that the photoresist is deposited on a crystal of the light emitting diode display panel through the first opening 11 to form a common anode structure, and the photoresist layer 12 is wet-processed.
Step S04, manufacturing a second insulating layer 20 on the substrate of the light emitting diode display panel 30, and depositing a conductive layer film 23 on the second insulating layer 20;
In step S05, the conductive layer film 23 is irradiated with a light beam having a specific wavelength to form a second opening 22 at a position of the second insulating layer 20 away from the crystal to form a cathode conductive layer, so that the surface of the light emitting diode display panel forms a cathode electrode.
In a specific implementation, a physical vapor deposition method may be used to deposit the conductive layer film 23 on the second insulating layer 20, and then the conductive layer film 23 is subjected to a wetting treatment; and then, the light emitting diode display panel can be irradiated by laser or yellow light to cause chemical reaction of the conductive layer, a second opening 22 can be formed at the position of the second insulating layer 20 far from the crystal, and the conductive layer is subjected to wetting treatment, so that the corresponding through hole of each second opening 22 represents an endpoint for providing a cathode signal for a pixel unit, the surface of the light emitting diode display panel can form a cathode pixel electrode, the light emitting diode display panel can be further adapted to conventional detection equipment, the conventional detection equipment is not required to be modified, the pixel units of the light emitting diode display panels such as MicroLED and MiniLED can be detected by using the conventional detection equipment, and the detection cost is reduced.
Example III
Based on the content of the second scheme of the embodiment, a detection method embodiment of the light emitting diode display panel of the third embodiment of the application is provided;
referring to fig. 8, fig. 8 is a plan view of a pretreated led display panel according to the present application;
It can be understood that, in step S03 "the photoresist is deposited on the crystal of the led display panel through the first opening to form an anode conductive layer of the common anode structure", so that the anodes 02 of the different pixel units of the led display panel share one anode port;
Based on step S05 "of the second embodiment, a second opening (as shown in fig. 8, the center position of fig. 8 represents the second opening 22", that is, the cathode via 22 "shown in fig. 6) is formed at the position where the second insulating layer is far away from the crystal by irradiating the conductive layer with a light beam with a specific wavelength, so as to form a cathode conductive layer", so that the cathodes 01 of different pixel units of the led display panel are independent, as shown in fig. 8, the circular portion corresponding to each center position shown in fig. 8 represents the upper substrate cathode 01 shown in fig. 6, the entire background area of the led display panel represents the upper substrate cathode 01 shown in fig. 6), and each pixel unit of the led display panel 30 can be independently detected by each independent cathode 01, so that the electron emitter 40 of the detection device emits an electron beam to the led display panel 30, and the cathode 01 of the led display panel has signal induction, thereby triggering the pixel unit to generate an electronic secondary induction signal;
After receiving the electronic secondary sensing signal, an electronic sensor of the detection device determines a response value of each pixel unit of the light emitting diode display panel 30 based on the secondary sensing signal; determining the pixel unit with the response value larger than or equal to a preset response threshold value as a target pixel unit with a normal state; the pixel units with the response values smaller than the preset response threshold are determined to be other pixel units with abnormal states, so that the display conditions of the display units of the light emitting diode display panel 30 can be detected more finely.
In a specific implementation, the detection device of the present embodiment is equipped with a liquid crystal cell in addition to a processor, a memory, and an electron emitter and an electron sensor.
Before formally testing the led display panel, it is necessary to ensure that the environment of the led display panel is a dust-free and vibration-free test environment, and to ensure the accuracy of the test results, the temperature and humidity of the environment should be controlled within proper ranges.
The electron emitter, the electron sensor and the liquid crystal cell are then connected as required and test parameters such as scan speed, voltage etc. are set.
During the course of the formal test, an electron beam is emitted by an electron emitter to apply an appropriate voltage to the liquid crystal cell, and an electron sensor is used to detect the response of the cathode of each pixel cell of the light emitting diode display panel. And recording the response value of each pixel unit, comparing the response value with a preset response threshold value, and judging whether a signal exists at the cathode of the pixel unit or not by the processor of the detection equipment according to the response value of the electronic sensor. If the response value is higher than or equal to the preset response threshold value, the pixel unit of the LED display panel has a signal; if the response value is lower than the preset response threshold value, the pixel unit of the light-emitting diode display panel has no signal. The results are recorded and a corresponding report is generated.
The embodiment of the application also provides a display device, which is a light-emitting diode display panel, wherein the light-emitting diode display panel comprises a diode display substrate, an LED crystal is arranged at the lower layer of the diode display substrate, and the structure of the LED crystal comprises an N-type semiconductor layer 011, a quantum well layer 012 and a P-type semiconductor layer 013 which are sequentially arranged; after the pretreatment method described in the second embodiment is performed on the led display panel, a cathode conductive layer is covered over the N-type semiconductor layer 011, so that cathode electrodes are formed over the surface of the led display substrate, and each cathode electrode corresponds to one pixel unit;
As shown in fig. 6, after the pretreatment, the second opening 22 may leak a small amount of the P-type semiconductor layer 013, when the led display panel is in a bright screen operation (for example, the display is powered on), the cathode 01 of the led will have a voltage, and the second insulating layer 20 forms a cathode conductive layer with a cathode electrode on the surface, so that the second opening 22 may lead out the cathode electrode of the P-type semiconductor layer 013 to form the "TFT substrate cathode 01" shown in fig. 6, and the "TFT substrate cathode 01" corresponds to the "TFT pixel driving circuit 31", so that each cathode electrode corresponds to one pixel unit, and when the electron emitter 40 of the detection device emits an electron beam to the surface of the diode display substrate, if the cathode electrode exists in the pixel unit, the electrons of the electron beam are emitted to the electron sensor of the detection device, so as to detect whether the pixel unit is abnormal.
It should be noted that, the detection device adopted in the embodiment of the present application has a simple structure, and is matched with the pretreatment method of the second embodiment, so that the conventional detection device does not need to be updated and improved greatly in the case of huge number of wafers of the led displays MicroLED and MiniLED. The cost of detecting overhead for the led displays MicroLED and MiniLED is reduced.
Embodiments of the present application also provide a computer readable storage medium storing a computer program which, when executed by a processor, implements steps for implementing the various method embodiments described above.
The integrated units, if implemented in the form of software functional units and sold or used as stand-alone products, may be stored in a computer readable storage medium. Based on such understanding, the present application may implement all or part of the flow of the method of the above embodiments, and may be implemented by a computer program to instruct related hardware, where the computer program may be stored in a computer readable storage medium, and when the computer program is executed by a processor, the computer program may implement the steps of each of the method embodiments described above. Wherein the computer program comprises computer program code which may be in source code form, object code form, executable file or some intermediate form etc. The computer readable medium may include at least: any entity or device capable of carrying computer program code to a photographing device/terminal apparatus, recording medium, computer Memory, read-Only Memory (ROM), random access Memory (RAM, random Access Memory), electrical carrier signals, telecommunications signals, and software distribution media. Such as a U-disk, removable hard disk, magnetic or optical disk, etc. In some jurisdictions, computer readable media may not be electrical carrier signals and telecommunications signals in accordance with legislation and patent practice.
It will be apparent to those skilled in the art that the above-described functional units are merely illustrated in terms of division for convenience and brevity, and that in practical applications, the above-described functional distribution may be performed by different functional units, i.e., the internal structure of the apparatus is divided into different functional units, so as to perform all or part of the above-described functions. The functional units in the embodiment may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit, where the integrated units may be implemented in a form of hardware or a form of a software functional unit. In addition, the specific names of the functional units are also only for distinguishing from each other, and are not used to limit the protection scope of the present application. The specific working process of the units in the above system may refer to the corresponding process in the foregoing method embodiment, which is not described herein again.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and in part, not described or illustrated in any particular embodiment, reference is made to the related descriptions of other embodiments.
Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented in other manners. For example, the apparatus embodiments described above are merely illustrative, e.g., the division of the units is merely a logical function division, and there may be additional divisions when actually implemented, e.g., multiple units or components may be combined or integrated into another system, or some features may be omitted or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed may be an indirect coupling or communication connection via interfaces, devices or units, which may be in electrical, mechanical or other forms.
The units described as separate units may or may not be physically separate, and units shown as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
The above embodiments are only for illustrating the technical solution of the present application, and not for limiting the same; although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present application, and are intended to be included in the scope of the present application.
Claims (10)
1. The detection method of the light-emitting diode display panel is characterized in that the light-emitting diode display panel comprises a diode display substrate, an LED crystal is arranged on the lower layer of the diode display substrate, an N-type semiconductor layer, a quantum well layer and a P-type semiconductor layer are sequentially arranged on the structure of the LED crystal, a cathode conducting layer is covered above the N-type semiconductor layer, so that a cathode electrode is formed above the surface of the diode display substrate, each cathode electrode corresponds to one pixel unit, and each pixel unit corresponds to N LED crystals of the light-emitting diode display panel, and the detection method comprises the following steps:
Emitting electron beams to the light emitting diode display panel, so that the electron beams react with cathode electrodes on the surface of the diode display substrate to trigger the pixel units to generate electron secondary induction signals;
Receiving the electronic secondary induction signal;
And detecting whether the pixel unit is normal or not based on the electronic secondary induction signal.
2. The method of claim 1, wherein the N-type semiconductor layer of the LED crystal is covered with a patterned first insulating layer, wherein the anode conductive layer has a first opening with respect to the structure of the LED crystal, and the first opening is deposited on the N-type semiconductor layer of the LED crystal, such that the first insulating layer forms an anode conductive layer whose surface is an anode;
The lower layer of the diode display substrate is provided with a second insulating layer, wherein the cathode conductive layer is provided with a second opening corresponding to the structure of the LED crystal, and the second opening is deposited on the P-type semiconductor layer of the LED crystal, so that the surface of the second insulating layer forms a cathode conductive layer of the cathode electrode.
3. The method of claim 2, wherein the emitting an electron beam to the led display panel such that the electron beam reacts with a cathode electrode of a surface of the led display substrate to trigger the pixel unit to generate an electron secondary sensing signal, comprising:
Emitting an electron beam to the light emitting diode display panel through an electron emitter, so that a cathode electrode led out of the second opening reacts with the electron beam to trigger the pixel unit to generate an electron secondary induction signal;
The receiving the electronic secondary induction signal comprises the following steps:
and receiving the electronic secondary induction signal through an electronic inductor.
4. A detection method according to any one of claims 1 to 3, wherein the detecting whether the pixel unit is normal based on the electronic secondary induction signal comprises:
determining a response value of each pixel unit of the light emitting diode display panel based on the secondary sensing signal;
Determining the pixel unit with the response value larger than or equal to a preset response threshold value as a target pixel unit with a normal state;
and determining the pixel units with response values smaller than a preset response threshold as other pixel units with abnormal states.
5. A detection method according to any one of claims 1 to 3, wherein the detecting whether the pixel unit is normal based on the electronic secondary induction signal comprises:
the pixel unit generating the electronic secondary induction signal is determined to be a target pixel unit with a normal state;
and determining the pixel units which do not generate the electronic secondary induction signals as other pixel units with abnormal states.
6. The pretreatment method of the light-emitting diode display panel comprises a diode display substrate, wherein an LED crystal is arranged on the lower layer of the diode display substrate, and an N-type semiconductor layer, a quantum well layer and a P-type semiconductor layer are sequentially arranged on the structure of the LED crystal, and the pretreatment method is characterized by comprising the following steps:
And preprocessing the light-emitting diode display panel to form cathode electrodes on the surface of the light-emitting diode display panel, wherein each cathode electrode corresponds to one pixel unit, and each pixel unit corresponds to n LED crystals of the light-emitting diode display panel.
7. The pretreatment method of claim 6, wherein the pretreatment of the light emitting diode display panel to form a cathode electrode on a surface of the light emitting diode display panel comprises:
Manufacturing a first insulating layer at a space position between the substrate surface of the light-emitting diode display panel and the LED crystal structure;
patterning the first insulating layer to form a first opening in the first insulating layer;
Coating a photoresist layer on the first insulating layer, wherein the photoresist layer is deposited on the crystal of the light-emitting diode display panel through the first opening so as to form an anode conductive layer of a common anode structure;
Manufacturing a second insulating layer on the substrate of the light-emitting diode display panel, and depositing a conductive layer film on the second insulating layer;
And irradiating the conductive layer film with a light beam of a specific wavelength to form a second opening at a position of the second insulating layer away from the crystal to form a cathode conductive layer, so that a cathode electrode is formed on the surface of the light emitting diode display panel.
8. The pretreatment method of claim 7, wherein said fabricating a second insulating layer on the substrate of the light emitting diode display panel, depositing a conductive layer film on the second insulating layer, comprises:
and depositing a conductive layer film on the second insulating layer by using a physical vapor deposition method.
9. The pretreatment method of claim 7, wherein patterning the first insulating layer to form a first opening in the first insulating layer further comprises:
Drying the insulating layer;
the method further comprises the following steps after the first insulating layer is coated with the photoresist layer:
and carrying out wetting treatment on the photoresist layer.
10. The display device is characterized by comprising a light-emitting diode display panel, wherein the light-emitting diode display panel comprises a diode display substrate, an LED crystal is arranged on the lower layer of the diode display substrate, and the structure of the LED crystal comprises an N-type semiconductor layer, a quantum well layer and a P-type semiconductor layer which are sequentially arranged;
After the light emitting diode display panel is pretreated by the pretreatment method according to any one of claims 6 to 9, a cathode conductive layer is covered on the N-type semiconductor layer, so that cathode electrodes are formed on the surface of the diode display substrate, and each cathode electrode corresponds to one pixel unit.
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| CN202410420880.1A CN118038775A (en) | 2024-04-09 | 2024-04-09 | Detection method, pretreatment method and display device of light-emitting diode display panel |
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