CN118028756B

CN118028756B - Wafer sputtering coating device and process

Info

Publication number: CN118028756B
Application number: CN202410246213.6A
Authority: CN
Inventors: 潘相成; 陈虹
Original assignee: Changzhou C Pe Photo Electricity Scientific And Technical Co ltd
Current assignee: Changzhou C Pe Photo Electricity Scientific And Technical Co ltd
Priority date: 2024-03-05
Filing date: 2024-03-05
Publication date: 2024-07-09
Anticipated expiration: 2044-03-05
Also published as: CN118028756A

Abstract

The invention discloses a wafer sputtering coating device and a process, and relates to the technical field of wafer coating, wherein the device comprises a coating bin, a base, a supporting shaft, an elastic sealing mechanism, a containing groove and a centralizing mechanism, wherein the top of the coating bin is provided with a target material, and the bottom of the coating bin is provided with a through hole; the base bears the wafer in the coating bin, one end of the supporting shaft is fixedly connected with the base, the other end of the supporting shaft penetrates through the through hole, the elastic sealing mechanism is used for providing elastic support and elastic sealing for the supporting shaft, the accommodating groove is positioned below the coating bin, and a deformable liquid and a temperature controller are preset in the accommodating groove, wherein the temperature controller controls the temperature of the deformable liquid to enable the deformable liquid to be converted between a solid state and a liquid state, and the bottom of the righting mechanism is immersed in the liquid deformable liquid and is self-adaptively adjusted to be vertical; the device and the process can realize automatic leveling of the base, so that the uniformity of film thickness can be improved when the wafer is subjected to sputtering film plating, and the performance of the wafer is improved.

Description

Wafer sputtering coating device and process

Technical Field

The invention relates to the technical field of wafer coating, in particular to a wafer sputtering coating device and a wafer sputtering coating process.

Background

In the wafer sputtering coating process, the uniformity of the film thickness is critical for evaluating the quality of the film and the performance of a coating device. To achieve this, we have to fully investigate various factors affecting magnetron sputtered films. In addition to target pitch and magnetic circuit arrangement, wafer levelness is also a key factor that cannot be ignored.

Wafer levelness plays an important role in the aspect of film coating uniformity; if the wafer has a large deviation in levelness during sputtering, metal atoms or ions are unevenly distributed during deposition. This not only affects the thickness uniformity of the film, but may also cause other quality problems such as increased porosity or undercladding.

However, in the existing magnetron sputtering coating process, a susceptor is placed in a vacuum chamber for supporting a wafer. The levelness of the susceptor tends to be difficult to control accurately due to the assembly process and the vacuum chamber mounting location.

More serious, the current technology cannot adjust the levelness of the base in real time. Once the assembly is completed, the levelness cannot be corrected, which has serious influence on the process precision and stability and limits the further improvement of the quality of the sputter coating.

Disclosure of Invention

The invention aims to improve the precision and stability of a wafer sputtering coating process, improve the control of the wafer levelness and seek an innovative technical solution to overcome the limitations of the prior art. Thereby promoting the continuous development and promotion of the film industry.

In order to achieve the above purpose, the present invention provides the following technical solutions: a wafer sputter coating apparatus comprising:

The inner side of the top of the coating bin is provided with a target material, and the bottom of the coating bin is provided with a through hole;

The base is positioned in the coating bin and used for bearing a wafer to be coated;

One end of the supporting shaft is vertically fixedly connected with the base, and the other end of the supporting shaft slides through the through hole;

An elastic sealing mechanism embedded in the through hole and used for providing elastic support and elastic sealing for the support shaft;

The accommodating groove is positioned below the coating bin, is internally provided with deformable liquid, and is internally embedded with a temperature controller for controlling the temperature of the deformable liquid so as to adjust the transition of the deformable liquid between solid and liquid; and

The bottom of the righting mechanism is immersed in liquid deformable liquid and can be adjusted to be vertical in a self-adaptive mode, the deformable liquid is solid and is locked after that, at the moment, the top of the righting mechanism adjusts the supporting shaft, and the supporting shaft is vertical.

Further, preferably, the righting mechanism includes:

The wire body is connected to the bottom of the supporting shaft;

the self-positioning disc is connected to the bottom of the wire body, and the lower surface of the self-positioning disc is always lower than the upper surface of the deformable liquid; and the bottom of the coaxial adjusting mechanism is connected with the self-positioning disk, and the top of the coaxial adjusting mechanism is sleeved outside the supporting shaft and is used for adjusting the supporting shaft to be coaxial with the self-positioning disk.

Further, preferably, the coaxial adjusting mechanism includes:

the top ring is of an annular structure and can provide yielding for the support shaft;

At least three adjusting seats distributed in a circumferential array and fixed on the top ring;

The transverse claw slides along the radial direction of the top ring and passes through the adjusting seat;

The vertical claw slides through the transverse claw and the adjusting seat along the axial direction of the top ring, and can drive the transverse claw to slide radially when the relative axial position between the vertical claw and the adjusting seat is adjusted; and an arc plate fixed to an end of the lateral claw near the support shaft.

Further, preferably, a through groove is formed in the middle of the transverse claw, and is used for installing a roller body and providing yielding for the vertical claw, and one end, close to the roller body, of the vertical claw is an inclined surface;

A bottom ring is arranged below the top ring by adopting a driving piece, and the driving piece can drive the top ring to move towards the bottom ring or move away from the bottom ring;

The bottom ring is supported on the outer ring by a telescopic rod, and the outer ring is fixedly connected to the self-positioning disc.

Further, preferably, a plurality of the arc plates may form a ring shape when they are in contact with each other, and the ring shape is fitted to the outside of the support shaft.

Further, preferably, a locking shaft is fixed to the bottom of the self-positioning plate.

Further, preferably, the wire body has elastic elasticity, and a lifter is arranged at one side of the accommodating groove and is used for lifting the bottom ring.

Further, preferably, the strain gauge is embedded in the arc plate.

Further, preferably, the deformable liquid is water or a deformable metal liquid.

A wafer sputtering coating process comprises the following steps:

s1, placing a wafer to be coated on a base;

S2, regulating the temperature of the deformable liquid by using a temperature controller and keeping the deformable liquid in a liquid state;

s3, immersing the self-positioning disc in the deformable liquid, and adaptively keeping a vertical state;

s4, regulating the temperature of the deformable liquid by the temperature controller and keeping the deformable liquid in a solid state to form locking of the self-positioning disc;

s5, the coaxial adjusting mechanism adjusts the supporting shaft to be coaxial with the self-positioning disc;

S6, performing vacuum treatment on the coating bin, and then introducing argon;

s7, applying voltage to the target material to realize sputtering coating.

Compared with the prior art, the invention provides a wafer sputtering coating device and a wafer sputtering coating process, which have the following beneficial effects:

The device and the process can realize automatic leveling of the base, so that the uniformity of film thickness can be improved when the wafer is subjected to sputtering film plating, and the performance of the wafer is improved.

Drawings

FIG. 1 is a schematic plan view of a wafer sputtering apparatus;

FIG. 2 is a schematic plan view of a centering mechanism in a wafer sputter coating apparatus;

FIG. 3 is a schematic top view of a centering mechanism in a wafer sputter coating apparatus;

FIG. 4 is a schematic view of the cross-sectional structure of A-A of FIG. 3;

FIG. 5 is a schematic perspective view of a centering mechanism in a wafer sputter coating apparatus;

In the figure: 1. a coating bin; 2. a base; 3. a support shaft; 4. an elastic sealing mechanism; 5. a righting mechanism; 6. a receiving groove; 7. a deformable liquid; 8. a temperature controller; 9. an air inlet; 10. an air outlet; 11. a flow meter; 12. a controller; 13. a linear expansion device; 14. a magnetic control; 15. a target material; 31. a negative pressure hole; 51. a plugging disc; 52. a wire body; 53. a self-positioning disk; 54. a locking shaft; 55. an outer ring; 56. a telescopic rod; 57. a bottom ring; 58. a driving member; 59. a top ring; 510. an adjusting seat; 511. a vertical claw; 512. a transverse claw; 513. an arc plate; 514. a through groove; 515. a roller body; 516. a lifter.

Detailed Description

Referring to fig. 1 to 5, in an embodiment of the present invention, a wafer sputter coating apparatus is provided, including:

The coating bin 1, wherein a target 15 is arranged on the inner side of the top of the coating bin 1, and a through hole is formed in the bottom of the coating bin 1;

the base 2 is located in the coating bin 1 and is used for carrying a wafer to be coated, in a wafer sputtering coating process, the wafer to be coated is usually required to be heated, the wafer to be coated can be heated, the temperature of the wafer to be coated can be raised by heating the wafer to be coated, and sputtered atoms or molecules can obtain higher energy in the deposition process, so that the adhesion, the compactness and the stability of the film are improved, and therefore, the base 2 should have a heating function, for example, a heating resistor is embedded in the base 2;

And a support shaft 3, one end of which is vertically and fixedly connected with the base 2, and the other end of which slides through the through hole, wherein the vertical fixedly connection means that: the support shaft 3 is perpendicular to the base 2 and is rigidly connected with the base 2;

An elastic sealing mechanism 4 embedded in the through hole and used for providing elastic support and elastic sealing for the support shaft 3;

The accommodating groove 6 is positioned below the coating bin 1, is internally provided with a deformable liquid 7, and is internally embedded with a temperature controller 8 for controlling the temperature of the deformable liquid 7 so as to adjust the transition of the deformable liquid 7 between solid and liquid; and the bottom of the centralizing mechanism 5 is immersed in the liquid deformable liquid 7 and can be adjusted to be vertical in a self-adaptive manner, the deformable liquid 7 is solid and locks the centralizing mechanism 5, and at the moment, the top of the centralizing mechanism 5 adjusts the supporting shaft 3 and enables the supporting shaft 3 to be vertical.

Obviously, the elastic sealing mechanism 4 is a mechanical sealing technique, mainly used for preventing leakage of liquid or gas. It is typically comprised of resilient sealing rings that can fit closely together to prevent the passage of fluid.

Of course, since the elastic seal ring is elastic, the elastic seal mechanism 4 allows the support shaft 3 to perform multi-directional inclination adjustment, allowing the support shaft 3 to axially slide;

wherein the gradient refers to: the angle between the axis of the support shaft 3 and the horizontal plane.

The elastic sealing mechanism 4 is a prior art, and is not described here again.

It should be further explained that, due to the influence of the assembly process and/or the influence of the installation position of the coating booth 1, the base 2 is difficult to keep in a horizontal state during the position adjustment, wherein the position adjustment refers to: the distance between the susceptor 2 and the target 15 is adjusted.

Although the elastic sealing mechanism 4 is provided in the present embodiment, so as to allow the support shaft 3 to perform inclination adjustment, thereby allowing the base 2 to be kept horizontal, the support shaft 3 still tends to be kept coaxial with the elastic sealing mechanism 4, that is, when the elastic sealing mechanism 4 and the coating cartridge 1 are in a non-horizontal state, even though the support shaft 3 tends to be kept vertical under the action of its own weight, the support shaft 3 does not reach a vertical state under the action of the elastic sealing mechanism 4;

Even if the support shaft 3 reaches the vertical state under the dead weight state, how to lock the support shaft 3 at this time becomes a new challenge, and in many cases, the position adjustment of the base 2 is also required, so that the support shaft 3 cannot be completely locked.

In this embodiment, the centering mechanism 5 is further provided, in brief, in this embodiment, the centering mechanism 5 is disposed below the support shaft 3, and is not limited by the elastic sealing mechanism 4, so that the centering mechanism can keep a vertical state under the action of self gravity, and can feed back the vertical state to the support shaft 3, so that the centering mechanism can keep the vertical state, and further the base 2 can keep a horizontal state, so that the uniformity of the coating film can be improved when the wafer to be coated is subjected to sputtering coating.

Further, the bottom of the centering mechanism 5 is immersed in the liquid deformable liquid 7 and can be adjusted to be vertical in a self-adaptive manner, and then the deformable liquid 7 is solid and is solidified and locked to the centering mechanism 5, at this time, the top of the centering mechanism 5 adjusts the supporting shaft 3, and the supporting shaft 3 is made to be vertical.

More specifically, the righting mechanism 5 includes:

A wire body 52 connected to the bottom of the support shaft 3;

A self-positioning plate 53 connected to the bottom of the wire 52, and the lower surface of the self-positioning plate 53 is always lower than the upper surface of the deformable liquid 7; and the bottom of the coaxial adjusting mechanism is connected with the self-positioning disc 53, the top of the coaxial adjusting mechanism is sleeved outside the supporting shaft 3, and the coaxial adjusting mechanism is used for adjusting the supporting shaft 3 to be coaxial with the self-positioning disc 53.

The supporting shaft 3 can provide support for the self-positioning disc 53 through the wire body 52, and the wire body 52 can be deformed at will, so that the wire body can still well provide support for the self-positioning disc 53 when the self-positioning disc 53 adjusts the self state to be the vertical state under the action of gravity;

In addition, a negative pressure hole 31 may be provided in the middle of the support shaft 3, the negative pressure hole 31 extending through the base 2, thereby providing negative pressure positioning for the wafer to be coated on the base 2, in which case a blocking disc 51 may be provided in the negative pressure hole 31, and a wire body 52 may be fixed on the blocking disc 51;

The negative pressure hole 31 is also connected to an external negative pressure controller, and will not be described here again;

In addition, in this embodiment, a coaxial adjusting mechanism is further provided, the bottom of which is connected to the self-positioning disk 53, so that when the self-positioning disk 53 adjusts its own state, the coaxial adjusting mechanism adjusts its own state synchronously, and the top of the synchronous adjusting mechanism is sleeved outside the supporting shaft 3, so that when the synchronous adjusting mechanism adjusts its own state synchronously to a horizontal state, the next step, that is, adjusting the supporting shaft 3, adjusts the supporting shaft 3 to be coaxial with the self-positioning disk 53, can be continued.

Based on this, in practice, the following steps may be used:

Firstly, placing a wafer to be coated on a base 2;

secondly, the temperature controller 8 adjusts the temperature of the deformable liquid 7 and keeps the deformable liquid in a liquid state;

Thirdly, immersing the self-positioning disc 53 in the deformable liquid 7, and adaptively keeping the vertical state;

Fourthly, the temperature controller 8 adjusts the temperature of the deformable liquid 7 and keeps the deformable liquid in a solid state to form locking for the self-positioning disc 53;

fifthly, adjusting the supporting shaft 3 to be coaxial with the self-positioning disc 53 by a coaxial adjusting mechanism;

Sixthly, performing vacuum treatment on the coating bin 1, and then introducing argon;

And seventh, applying voltage to the target 15 to realize sputter coating.

In addition, in this embodiment, a magnetic control 14 is disposed at the top of the coating cabin 1, and the magnetic control 14 is controlled by a linear expansion device 13 to realize linear micro-movement;

The coating bin 1 is further provided with an air inlet 9 and an air outlet 10, a flowmeter 11 is arranged at the air inlet 9 and/or the air outlet 10, the flowmeter 11 is further electrically connected with a controller 12, and the controller 12 is electrically connected with the linear expansion device 13.

It should be noted that in the sputter coating process, argon is generally required to be continuously supplied throughout the sputtering process, rather than being charged with a certain amount of argon only at the beginning. This is because sputter coating is a dynamic process that requires maintaining a certain gas pressure and composition within the sputtering chamber to maintain stable sputtering conditions.

During the sputtering process, argon gas not only provides argon ions to strike the target surface, but also plays a role in maintaining the pressure in the sputtering chamber stable. When the target atoms or molecules are sputtered, the target atoms or molecules collide with argon molecules to take away a part of energy, so that the energy in the sputtering chamber is stable.

In addition, the continuous supply of argon also helps to keep the sputtering chamber clean and prevent oxidation of the target surface. During sputtering, argon can carry away impurities and oxides in the sputtering chamber, thereby reducing their impact on film quality and performance.

Therefore, in order to achieve a stable sputtering process and to obtain a high-quality coating effect, it is generally necessary to continuously supply argon gas, and at this time, the supply amount of argon gas can be monitored by the flow meter 11, so that the progress of the sputter coating can be known.

In addition, it should be understood that in the prior art, the target utilization rate is only about twenty percent, and the reason is as follows:

In the sputtering process, uneven erosion phenomenon is easy to occur on the surface of the target material due to the irregular action relation of sputtering ions, so that the uniformity of the thickness of the sputtered film is poor. This not only reduces the target utilization, but also affects the quality of the sputtered film.

Conventional sputter targets are generally circular in shape, and the magnetic field generated at the surface of the target is circular in shape, which also results in non-uniform erosion. In addition, the local position of the target material has larger etching rate, so that the effective utilization rate of the target material is lower.

In order to improve the utilization rate of the target, the hollow circular tube type sputtering target capable of rotating around the fixed strip magnet assembly is popularized at home and abroad at present, and the target can be uniformly etched at 360 degrees, so that the utilization rate can be improved to 75-80% from 20-30% in general.

There are some potential drawbacks to this design:

The complexity of the equipment is increased, the maintenance and debugging difficulties are increased, and the target material is difficult to replace; because the target is rotated about a fixed bar magnet assembly, more careful and precise handling is required to replace the target so as not to damage the rotating mechanism and magnet assembly.

In this embodiment, the position of the magnetic field can be changed by only adjusting the position of the magnetic control 14, so that the target surface can be etched relatively uniformly, and the adjustment of the magnetic control 14 is based on the progress of sputtering coating, so that the adjustment is more reasonable and effective.

In addition, in this embodiment, the coaxial adjusting mechanism includes:

A top ring 59 having a ring-like structure and capable of providing a relief for the support shaft 3;

at least three adjustment seats 510 distributed in a circumferential array, which are fixed on the top ring 59;

a lateral claw 512 sliding through the adjustment seat 510 in the radial direction of the top ring 59;

A vertical claw 511 which slides through the lateral claw 512 and the adjustment seat 510 in the axial direction of the top ring 59, and which can drive the lateral claw 512 to slide radially when adjusting the relative axial position between the vertical claw 511 and the adjustment seat 510; and an arc plate 513 fixed to an end portion of the lateral claw 512 near the support shaft 3.

The top ring 59 can provide yielding for the support shaft 3, and it should be understood that the top ring 59 only needs to ensure that yielding can be provided for the support shaft 3, and the arc plate 513 can clamp the support shaft, so that the top ring 59 can provide yielding for the support shaft 3, and in this embodiment, the top ring 59 is annular as a whole;

In one embodiment, the top ring 59 is located below the support shaft 3, and the arc plate 513 can clamp the support shaft, but the clamping position is lower, that is, the clamping position is close to the lower end of the support shaft 3, and the clamping manner may have an unstable connection;

In one embodiment, the top ring 59 is sleeved on the outside of the support shaft 3, and the arc plate 513 can clamp the support shaft, so that the clamping position of the arc plate is not close to the lower end of the support shaft 3, and the clamping manner can improve the stability of connection to a certain extent.

In this embodiment, the lateral claw 512 can be driven to slide radially when the relative axial position between the vertical claw 511 and the adjustment seat 510 is adjusted, and more specifically, the lateral claw 512 can be driven to move toward the central axis direction of the support shaft 3 when the vertical claw 511 moves away from the lateral claw 512;

in order to realize that when the vertical claw 511 moves away from the horizontal claw 512, the horizontal claw 512 can be driven to move towards the central axis direction of the support shaft 3, in this embodiment, a through groove 514 is formed in the middle of the horizontal claw 512, and is used for installing the roller body 515 and providing a yielding position for the vertical claw 511, and one end of the vertical claw 511, which is close to the roller body 515, is an inclined surface;

A bottom ring 57 is arranged below the top ring 59 by adopting a driving piece 58, and the driving piece 58 can drive the top ring 59 to move towards the bottom ring 57 or move away from the bottom ring 57;

The bottom ring 57 is supported on the outer ring 55 by a telescopic rod 56, and the outer ring 55 is fixedly connected to the self-positioning disc 53.

The driving piece is a linear driving piece, and the linear driving piece and the linear expansion device 13 can be:

Ball screw: this is one of the most commonly used linear drives, consisting of a screw, nut and ball; when the screw rotates, the balls roll in the nut, so that the nut moves along the axial direction;

Gear rack: the gear rack is a linear driving piece composed of a gear and a rack, and the linear motion of the rack is driven by the rotary motion of the gear;

linear motor: the linear motor is a driving piece for directly converting electric energy into linear motion mechanical energy, and an intermediate transmission mechanism is not needed;

Pneumatic cylinder: the pneumatic cylinder is a device for driving a piston to do linear motion by utilizing compressed air, and is generally composed of a cylinder body, a piston, a sealing element, a pneumatic control valve and the like;

and (3) a hydraulic cylinder: the hydraulic cylinder is a device for driving a piston to do linear motion by utilizing the pressure of hydraulic oil, and is generally composed of a cylinder body, a piston, a sealing element, a hydraulic control valve and the like.

The telescopic rod 56 has a double-cylinder structure, that is, it includes an inner cylinder and an outer cylinder, wherein the inner cylinder is supported by the outer cylinder, and one end of the inner cylinder slides out of one end of the outer cylinder, which is not described herein.

As a preferred embodiment, a plurality of the arc plates 513 may be formed in a ring shape when they are in contact with each other, and the ring shape is fitted to the outside of the support shaft 3.

As a preferred embodiment, a locking shaft 54 is fixed to the bottom of the self-positioning plate 53.

It should be noted that, in the present embodiment, the locking shaft 54 is substantially configured to extend from the positioning plate 53, and this extending has the advantage of improving the locking effect of the deformable liquid 7 and the positioning plate 53.

As a preferred embodiment, the wire body 52 has elastic elasticity, and a lifter 516 is disposed at one side of the accommodating groove 6, for lifting the bottom ring 57.

It should be noted that the bottom ring 57 is lifted by the lifter 516 only after the inclination adjustment of the support shaft 3 is completed, thereby achieving the position adjustment of the base 2.

As a preferred embodiment, the strain gage is embedded in the arc plate 513.

The strain gauge is a sensor made of thin film sheets and can sense the strain and deformation of an object. When the strain gauge is acted by external force, resistance value change is generated, deformation and change data of an object can be obtained by measuring the resistance value change, and stress monitoring of the arc plate 513 can be well realized by embedding the strain gauge in the arc plate 513, so that the state of the support shaft 3 is perceived to a certain extent;

specifically, in this embodiment, four arc plates 513 may be provided, where each arc plate 513 is provided with one strain gauge, and the four strain gauges are respectively: the device comprises a first strain gauge, a second strain gauge, a third strain gauge and a fourth strain gauge, wherein after a supporting shaft is adjusted, the force monitored by the first strain gauge is a first pressure, the force monitored by the second strain gauge is a second pressure, the force monitored by the third strain gauge is a third pressure, and the force monitored by the fourth strain gauge is a fourth pressure;

when the first pressure and the second pressure are large, it is explained that the support shaft 3 is inclined toward the first strain gage and the second strain gage before the support shaft 3 is adjusted.

In this embodiment, the deformable liquid 7 is water or a deformable metal liquid.

Taking water as an example: the state of water changes with changes in temperature and pressure. At lower temperatures, water will exist in the solid state, ice. In the solid state, the arrangement of water molecules assumes an ordered lattice structure, the shape and volume remain fixed, and no flow occurs, so that locking of the self-positioning disk 53 can be achieved. When the temperature increases, the water will change from a solid state to a liquid state. In the liquid state, the arrangement of the water molecules is relatively disordered, the molecules can move freely within a certain range, the shape of the water can adapt to the shape of the container, but the volume remains basically unchanged, so that the state of the deformable liquid 7 can be changed through the temperature controller 8.

Taking deformable molten metal as an example: deformable metal liquids, also known as liquid metals, are a type of metal material that can change shape and movement pattern. Such a material is capable of flowing, deforming, fusing, separating, etc. when subjected to external stimuli (such as electric fields, magnetic fields, temperature variations, etc.), achieving a controllable and repeatable deformation effect, and therefore, by means of the thermostat 8, the state of the deformable liquid 7 can be changed, and likewise, when the deformable metal liquid is in the solid state, locking of the self-positioning plate 53 can be achieved.

A wafer sputtering coating process comprises the following steps:

S1, placing a wafer to be coated on a base 2;

s2, the temperature controller 8 adjusts the temperature of the deformable liquid 7 and keeps the deformable liquid in a liquid state;

S3, immersing the self-positioning disc 53 in the deformable liquid 7, and adaptively keeping the self-positioning disc in a vertical state;

s4, the temperature controller 8 adjusts the temperature of the deformable liquid 7 and keeps the deformable liquid in a solid state to form locking of the self-positioning disc 53;

s5, adjusting the supporting shaft 3 to be coaxial with the self-positioning disc 53 by a coaxial adjusting mechanism;

s6, performing vacuum treatment on the coating bin 1, and then introducing argon;

s7, applying voltage to the target 15 to realize sputter coating.

First, sputter coating refers to the dissociation and release of target atoms or molecules from a surface by bombarding the surface of the target with energetic particles (e.g., argon ions). When the high-energy particles bombard the target, atoms or molecules on the surface of the target are impacted and separated to form gas atoms or molecules. These atoms or molecules are free to propagate in the vacuum environment within the sputtering chamber and deposit on the wafer to be coated.

In sputter coating, high energy particles are typically generated by electric field acceleration. Specifically, when gas ionization is generated by gas discharge, positive ions bombard the cathode target at a high speed under the action of an electric field. After striking out atoms or molecules of the cathode target, the atoms or molecules collide with the high-energy particles and exchange kinetic energy, so that enough energy is obtained and splashed out of the solid surface.

The foregoing description is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art, who is within the scope of the present invention, should make equivalent substitutions or modifications according to the technical solution of the present invention and the inventive concept thereof, and should be covered by the scope of the present invention.

Claims

1. The wafer sputtering coating device is characterized by comprising:

the device comprises a coating bin (1), wherein a target material (15) is arranged on the inner side of the top of the coating bin (1), and a through hole is formed in the bottom of the coating bin (1);

the base (2) is positioned in the coating bin (1) and is used for bearing a wafer to be coated;

One end of the supporting shaft (3) is vertically fixedly connected with the base (2), and the other end of the supporting shaft slides through the through hole;

An elastic sealing mechanism (4) embedded in the through hole and used for providing elastic support and elastic sealing for the support shaft (3);

The accommodating groove (6) is positioned below the coating bin (1), is internally provided with a deformable liquid (7), and is internally provided with a temperature controller (8) in an embedded manner, and the temperature controller is used for controlling the temperature of the deformable liquid (7) so as to adjust the transition of the deformable liquid (7) between solid and liquid; and the bottom of the righting mechanism (5) is immersed in the liquid deformable liquid (7) and can be adjusted to be vertical in a self-adaptive manner, the deformable liquid (7) is solid and locks the righting mechanism (5), and at the moment, the top of the righting mechanism (5) adjusts the supporting shaft (3) and enables the supporting shaft (3) to be vertical.

2. A wafer sputter coating apparatus according to claim 1, characterized in that the righting mechanism (5) comprises:

A wire body (52) connected to the bottom of the support shaft (3);

The self-positioning disc (53) is connected to the bottom of the wire body (52), and the lower surface of the self-positioning disc (53) is always lower than the upper surface of the deformable liquid (7); and the bottom of the coaxial adjusting mechanism is connected with the self-positioning disc (53), and the top of the coaxial adjusting mechanism is sleeved outside the supporting shaft (3) and is used for adjusting the supporting shaft (3) to be coaxial with the self-positioning disc (53).

3. The wafer sputter coating apparatus of claim 2, wherein the coaxial adjustment mechanism comprises:

a top ring (59) which has a ring-like structure and is capable of providing a relief for the support shaft (3);

At least three adjustment seats (510) distributed in a circumferential array, fixed on the top ring (59);

A lateral claw (512) sliding through the adjustment seat (510) in the radial direction of the top ring (59);

A vertical claw (511) which slides through the lateral claw (512) and the adjustment seat (510) along the axial direction of the top ring (59), and can drive the lateral claw (512) to slide radially when the relative axial position between the vertical claw (511) and the adjustment seat (510) is adjusted; and

And an arc plate (513) fixed to an end of the lateral claw (512) near the support shaft (3).

4. A wafer sputtering coating device according to claim 3, wherein a through groove (514) is formed in the middle of the transverse claw (512) for installing a roller body (515) and providing a yielding position for the vertical claw (511), and one end of the vertical claw (511) close to the roller body (515) is an inclined surface;

A bottom ring (57) is arranged below the top ring (59) by adopting a driving piece (58), and the driving piece (58) can drive the top ring (59) to move towards the bottom ring (57) or move away from the bottom ring (57);

the bottom ring (57) is supported on the outer ring (55) by a telescopic rod (56), and the outer ring (55) is fixedly connected to the self-positioning disc (53).

5. A wafer sputter coating apparatus according to claim 3, characterized in that a plurality of the arc plates (513) can form a ring shape when they are in contact with each other, the ring shape being fitted to the outside of the support shaft (3).

6. A wafer sputter coating apparatus according to claim 2, characterized in that a locking shaft (54) is fixed to the bottom of the self-positioning plate (53).

7. The wafer sputtering coating device according to claim 4, wherein the wire body (52) has elastic stretchability, and a lifter (516) is provided on one side of the accommodating groove (6) for lifting the bottom ring (57).

8. The wafer sputter coating apparatus of claim 5, wherein the arc plate (513) has a strain gauge embedded therein.

9. A wafer sputter coating apparatus according to claim 1, characterized in that the deformable liquid (7) is water or a deformable metal liquid.

10. A wafer sputtering coating process, which adopts the wafer sputtering coating device as defined in any one of claims 2 to 9, and is characterized by comprising the following steps:

s1, placing a wafer to be coated on a base (2);

s2, a temperature controller (8) adjusts the temperature of the deformable liquid (7) and keeps the deformable liquid in a liquid state;

s3, immersing the self-positioning disc (53) in the deformable liquid (7) and adaptively maintaining the self-positioning disc in a vertical state;

S4, the temperature controller (8) adjusts the temperature of the deformable liquid (7) and keeps the deformable liquid in a solid state to form locking of the self-positioning disc (53);

S5, the coaxial adjusting mechanism adjusts the supporting shaft (3) to be coaxial with the self-positioning disc (53);

s6, firstly carrying out vacuum treatment on the coating bin (1), and then introducing argon;

s7, applying voltage to the target (15) to realize sputtering coating.