CN118019440A - NbOx gate tube and preparation method thereof - Google Patents
NbOx gate tube and preparation method thereof Download PDFInfo
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- CN118019440A CN118019440A CN202211402661.8A CN202211402661A CN118019440A CN 118019440 A CN118019440 A CN 118019440A CN 202211402661 A CN202211402661 A CN 202211402661A CN 118019440 A CN118019440 A CN 118019440A
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- 238000002360 preparation method Methods 0.000 title abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 56
- 230000008569 process Effects 0.000 claims abstract description 36
- 238000000151 deposition Methods 0.000 claims abstract description 32
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000001301 oxygen Substances 0.000 claims abstract description 24
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 21
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 19
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 13
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 15
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 230000009471 action Effects 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims description 2
- 230000005684 electric field Effects 0.000 claims description 2
- 238000005121 nitriding Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- -1 titanium ions Chemical class 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 35
- 239000011229 interlayer Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010009 beating Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
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- Physical Vapour Deposition (AREA)
Abstract
The application discloses an NbOx gate tube and a preparation method thereof. The NbOx gate tube comprises a top electrode, a middle layer and a bottom electrode which are sequentially arranged from top to bottom; the material of the middle layer is NbOx, the material of the top layer electrode is platinum, and the material of the bottom layer electrode is titanium nitride. The preparation method of the NbOx gate tube comprises the following steps: depositing titanium nitride on a substrate to form a bottom electrode; depositing NbOx on the bottom electrode through a magnetron sputtering process to form an intermediate layer, and reducing the oxygen introducing rate in the forming process of the intermediate layer; and depositing platinum on the intermediate layer through a magnetron sputtering process to form a top electrode. According to the preparation method of the NbOx gate tube provided by the embodiment of the application, the NbOx is deposited on the bottom electrode through the magnetron sputtering process to form the middle layer, the oxygen introducing rate is reduced in the forming process of the middle layer, the forming voltage is reduced, and the forming-free NbOx gate tube is obtained.
Description
Technical Field
The application relates to the technical field of microelectronics, in particular to an NbOx gate tube and a preparation method thereof.
Background
The development of memory technology has put higher demands on the density and scalability of the memory, and the cross-point nonvolatile memory has high storage density and excellent scalability, which is a powerful competitor in the memory field, whereas the cross-point memory has high leakage current and crosstalk problems, which greatly limit the further application, and the gate tube has high on-off ratio, which is considered as a powerful candidate for solving the leakage current problem.
The gate tube of NbOx has the advantages of high on-state current, high switching speed and the like, but has the problem of high Forming (Forming) voltage, and needs to be solved.
Disclosure of Invention
The application aims to provide an NbOx gate tube and a preparation method thereof. The following presents a simplified summary in order to provide a basic understanding of some aspects of the disclosed embodiments. This summary is not an extensive overview and is intended to neither identify key/critical elements nor delineate the scope of such embodiments. Its sole purpose is to present some concepts in a simplified form as a prelude to the more detailed description that is presented later.
According to an aspect of an embodiment of the present application, there is provided an NbOx gate tube, including:
The NbOx gate tube is characterized by comprising a top electrode, a middle layer and a bottom electrode which are sequentially arranged from top to bottom;
the material of the middle layer is NbOx, the material of the top layer electrode is platinum, and the material of the bottom layer electrode is titanium nitride.
In some embodiments of the application, the thickness of the intermediate layer is 20-50nm.
In some embodiments of the application, the top electrode has a thickness in the range of 35-45nm.
In some embodiments of the application, the bottom electrode has a thickness in the range of 20-40nm.
According to another aspect of the embodiment of the present application, there is provided a method for preparing the NbOx gate tube, including:
depositing titanium nitride on a substrate to form a bottom electrode;
Depositing NbOx on the bottom electrode through a magnetron sputtering process to form an intermediate layer, and reducing the oxygen introducing rate in the forming process of the intermediate layer;
and depositing platinum on the intermediate layer through a magnetron sputtering process to form a top electrode.
In some embodiments of the present application, the depositing NbOx on the bottom electrode by a magnetron sputtering process to form an intermediate layer includes:
And striking an NbO target in an argon and oxygen environment through a magnetron sputtering technology to grow an NbOx intermediate layer, and forming the intermediate layer on the bottom electrode.
In some embodiments of the application, the reducing the oxygen-passing rate during the formation of the intermediate layer includes:
the oxygen flow rate was reduced from 1.5sccm to 0.6sccm during the growth of the intermediate layer.
In some embodiments of the application, depositing titanium nitride on the substrate includes depositing titanium nitride on the substrate by a PVD or PECVD process.
One of the technical solutions provided in one aspect of the embodiments of the present application may include the following beneficial effects:
According to the preparation method of the NbOx gate tube provided by the embodiment of the application, the NbOx is deposited on the bottom electrode through the magnetron sputtering process to form the middle layer, the oxygen introducing rate is reduced in the forming process of the middle layer, the forming voltage is reduced, and the forming-free NbOx gate tube is obtained.
Additional features and advantages of the application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the embodiments of the application.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings may be obtained according to the drawings without inventive effort to those skilled in the art.
Fig. 1 shows a flowchart of a method for preparing an NbOx gate tube according to an embodiment of the present application.
FIG. 2 illustrates a schematic diagram of a process for forming an intermediate layer in one embodiment of the application.
FIG. 3 shows statistical distribution of device forming voltages and threshold voltages for different amounts of oxygen in one embodiment of the application.
FIG. 4 shows a graph of IV characteristics of a device forming-free at an oxygen level of 0.6sccm in one embodiment of the present application.
The achievement of the objects, functional features and advantages of the present application will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
The present application will be further described with reference to the drawings and the specific embodiments in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It will be understood by those skilled in the art that all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs unless defined otherwise. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The gate tube device belongs to a switching device, and the working principle is as follows: before the starting voltage/current is reached, the gate tube is in a closed state, the resistance is very high, and leakage current can be effectively inhibited; after the starting voltage/current is reached, the gate tube is started and reduced to extremely low resistance, and sufficient operation current is provided for the corresponding memory cell.
One embodiment of the application provides an NbOx gate tube, which comprises a top electrode, a middle layer and a bottom electrode which are sequentially arranged from top to bottom. Nb is the element niobium.
In one embodiment, the interlayer material is NbOx, with a thickness of 20-50nm; specifically, the thickness of the intermediate layer may be, for example, 20nm, 30nm, 40nm or 50nm. The intermediate layer of NbOx material achieves optimal electrical properties at a thickness of 20-50 nm.
In one embodiment, the top electrode material is platinum Pt, and the thickness range is 35-45nm; specifically, the thickness of the top electrode may be, for example, 35nm, 40nm or 45nm.
In one embodiment, the bottom electrode material is titanium nitride TiN, with a thickness in the range of 20-40nm; specifically, the thickness of the bottom electrode may be, for example, 20nm, 25nm, 30nm, 35nm or 40nm.
The inventors of the present application have found that the method of reducing NbOx Forming (Forming) voltage employed in the related art includes reducing the thickness of the oxide layer, but the threshold voltage of the device is also reduced while the thickness is reduced, so that Forming-free (Forming-free) is difficult to achieve, and this method also increases the leakage current of the device. In the related art, an annealing method is also used to reduce the Forming (Forming) voltage of the NbOx gate tube, but this method may cause an increase in power consumption.
In addition, the inventor of the present application also found that, in the related art, the Forming (Forming) process of the NbOx gate tube is a great burden on circuit design and device testing, and the Forming (Forming) process of the device can reduce uniformity and yield of the device, and can increase complexity of operation and increase power consumption.
In view of the drawbacks of the related art, another embodiment of the present application provides a method for preparing a NbOx gate tube, as shown in fig. 1, including the following steps S10 to S30:
And S10, depositing titanium nitride TiN on the substrate through a PVD or PECVD process to form a bottom electrode.
S20, depositing an NbOx layer on the bottom electrode through a magnetron sputtering process to form an intermediate layer.
S30, depositing platinum Pt on the intermediate layer through a magnetron sputtering process to form a top electrode.
Compared with the prior art, the invention has the advantages that: by reducing the oxygen flow in the growth process of the niobium oxide film, the Forming voltage is reduced, and the Forming-free NbOx gate tube is obtained.
As shown in fig. 2, the NbO target is hit in Ar and O 2 environments by magnetron sputtering technique to grow the NbOx interlayer, and the oxygen-introducing rate is reduced during the growth of the interlayer.
Illustratively, reducing the oxygen flow rate during formation of the intermediate layer includes: the oxygen flow rate was reduced from 1.5sccm to 0.6sccm during the interlayer growth. As shown in fig. 3, by decreasing the oxygen flow amount from 1.5sccm to 0.6sccm (1 sccm=m 3 min-1), a reduction in Forming (Forming) voltage is achieved, and finally, a superior performance of Forming-free is achieved.
The intermediate layer of NbOx material can achieve optimal electrical properties at a thickness of 20-50nm, and is easy to form with reduced oxygen flow rate and has a low forming voltage.
When the thickness of the intermediate layer of NbOx material is set to 20-50nm, the oxygen flow rate is reduced from 1.5sccm to 0.6sccm during the growth of the intermediate layer, and the oxygen flow rate change rate can be defined by the growth rate of the intermediate layer and the thickness of the intermediate layer, and the definition of the oxygen flow rate change rate further reduces the Forming (Forming) voltage.
As shown in FIG. 4, the device with oxygen flow of 0.6sccm showed a characteristic of Forming-free IV.
In a specific example, the preparation method of the NbOx gate tube includes the following specific steps:
In the first step, tiN is deposited on the SiO 2/Si substrate by PVD technique to form the bottom electrode.
Secondly, beating an NbO target in an argon Ar and oxygen O 2 environment by a magnetron sputtering technology to form an intermediate layer; the oxygen content of the interlayer film can be changed by reducing the oxygen flux in the magnetron sputtering process.
And thirdly, depositing Pt on the intermediate layer by magnetron sputtering to form a top electrode, wherein the thickness range of the top electrode is 35-45nm.
Specifically, tiN is deposited by PVD techniques on SiO 2/Si substrates, including:
glow discharging the rare gas in an atmosphere of only nitrogen and a rare gas to form rare gas ions;
Nitriding the surface of the SiO 2/Si substrate and the surface of the titanium target table by utilizing nitrogen;
accelerating rare gas ions through an electric field to enable the rare gas ions to bombard the surface of the titanium target table, and sputtering titanium ions and TiN;
And depositing TiN on the surface of the SiO 2/Si substrate under the action of a magnetic field to form a TiN layer.
The glow discharge (glow discharge) is a gas discharge phenomenon that shows glow in a low-pressure gas, that is, a self-sustaining discharge (self-excited conduction) phenomenon in a lean gas. Glow discharge is a phenomenon of low-pressure discharge (Low pressure discharge) that is usually achieved by placing two parallel electrode plates in a closed container, exciting neutral atoms or molecules with generated electrons, and releasing energy in the form of light when the excited particles fall from the excited state back to the ground state.
Specifically, depositing TiN on the SiO 2/Si substrate by a PECVD process may include:
In the environment with nitrogen and rare gas, the nitrogen is ionized by adopting a microwave or radio frequency mode, plasma is formed locally, the chemical activity of the plasma is strong, the plasma is easy to react, the plasma reacts with the surface of the titanium target table, and TiN is deposited.
The operating equipment of the magnetron sputtering process may include a deposition chamber, a magnetron, and a substrate pedestal; wherein the sidewall of the deposition chamber is provided with a target inlet and a target outlet.
When the magnetron sputtering process is operated, the target is sent into the deposition chamber from the target inlet, the target is arranged on the top side of the deposition chamber, and the target can be moved out of the deposition chamber through the target outlet, so that the position of the target in the deposition chamber is changed.
A magnetron is disposed above the target in the deposition chamber for providing a magnetic field.
The substrate base is positioned at the bottom of the deposition chamber and is arranged opposite to the target material for placing the substrate to be deposited. The substrate may be silicon or silicon oxide.
According to the preparation method of the NbOx gate tube, provided by the embodiment of the application, the NbOx is deposited on the bottom electrode through the magnetron sputtering process to form the middle layer, the oxygen introducing rate is reduced in the forming process of the middle layer, the forming voltage is reduced, and the forming-free NbOx gate tube is obtained, so that the following problems in the related art are solved: the Forming voltage is high in the process of preparing the NbOx gate tube, the Forming process of the NbOx gate tube is a larger burden on circuit design and device test, the Forming process of the device can reduce the uniformity and yield of the device, and the complexity of operation and the power consumption are increased; the method for reducing the NbOx Forming (Forming) voltage adopted in the related art comprises the steps of reducing the thickness of an oxide layer, but the threshold voltage of a device is reduced while the thickness is reduced, so that Forming-free (Forming-free) is difficult to realize, and leakage current of the device is increased by the method; in the related art, an annealing method is adopted to reduce the Forming (Forming) voltage of the NbOx gate tube, but this method can cause an increase in power consumption.
It should be understood that, although the steps in the flowcharts of the figures are shown in order as indicated by the arrows, these steps are not necessarily performed in order as indicated by the arrows. The steps are not strictly limited in order and may be performed in other orders, unless explicitly stated herein. Moreover, at least some of the steps in the flowcharts of the figures may include a plurality of sub-steps or stages that are not necessarily performed at the same time, but may be performed at different times, the order of their execution not necessarily being sequential, but may be performed in turn or alternately with other steps or at least a portion of the other steps or stages.
The foregoing examples merely illustrate embodiments of the application and are described in more detail and are not to be construed as limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of the application should be assessed as that of the appended claims.
Claims (10)
1. The NbOx gate tube is characterized by comprising a top electrode, a middle layer and a bottom electrode which are sequentially arranged from top to bottom;
the material of the middle layer is NbOx, the material of the top layer electrode is platinum, and the material of the bottom layer electrode is titanium nitride.
2. The NbOx gate tube of claim 1, wherein the thickness of the intermediate layer is 20-50nm.
3. The NbOx gate tube of claim 1, wherein the top electrode has a thickness in the range of 35-45nm.
4. The NbOx gate tube of claim 1, wherein the bottom electrode has a thickness in the range of 20-40nm.
5. A method for preparing the NbOx gate tube according to any one of claims 1-4, comprising:
depositing titanium nitride on a substrate to form a bottom electrode;
Depositing NbOx on the bottom electrode through a magnetron sputtering process to form an intermediate layer, and reducing the oxygen introducing rate in the forming process of the intermediate layer;
and depositing platinum on the intermediate layer through a magnetron sputtering process to form a top electrode.
6. The method for preparing the NbOx gate tube according to claim 5, wherein the depositing NbOx on the bottom electrode by magnetron sputtering process to form the intermediate layer comprises:
And striking an NbO target in an argon and oxygen environment through a magnetron sputtering technology to grow an NbOx intermediate layer, and forming the intermediate layer on the bottom electrode.
7. The method for preparing a NbOx gate tube according to claim 5, wherein the reducing the oxygen-introducing rate in the forming process of the intermediate layer comprises:
the oxygen flow rate was reduced from 1.5sccm to 0.6sccm during the growth of the intermediate layer.
8. The method of claim 5, wherein depositing titanium nitride on the substrate comprises depositing titanium nitride on the substrate by PVD or PECVD process.
9. The method of claim 8, wherein depositing titanium nitride on the substrate by PVD process comprises:
glow discharging the rare gas in an atmosphere of only nitrogen and a rare gas to form rare gas ions;
Nitriding the surface of the SiO 2/Si substrate and the surface of the titanium target table by utilizing the nitrogen;
Accelerating the rare gas ions through an electric field to enable the rare gas ions to bombard the surface of the titanium target table, and sputtering titanium ions and TiN;
And depositing TiN on the surface of the SiO 2/Si substrate under the action of a magnetic field to form a TiN layer.
10. The method for preparing the NbOx gate tube of claim 8, wherein the deposition of titanium nitride on the SiO 2/Si substrate by PECVD process comprises:
In an environment with nitrogen and rare gas, ionizing the nitrogen by adopting a microwave or radio frequency mode to form plasma;
the plasma reacts with the surface of the titanium target table to deposit titanium nitride.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211402661.8A CN118019440A (en) | 2022-11-10 | 2022-11-10 | NbOx gate tube and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211402661.8A CN118019440A (en) | 2022-11-10 | 2022-11-10 | NbOx gate tube and preparation method thereof |
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| CN118019440A true CN118019440A (en) | 2024-05-10 |
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| CN202211402661.8A Pending CN118019440A (en) | 2022-11-10 | 2022-11-10 | NbOx gate tube and preparation method thereof |
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