CN110965023A - Titanium nitride film deposition method - Google Patents
Titanium nitride film deposition method Download PDFInfo
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- CN110965023A CN110965023A CN201911356970.4A CN201911356970A CN110965023A CN 110965023 A CN110965023 A CN 110965023A CN 201911356970 A CN201911356970 A CN 201911356970A CN 110965023 A CN110965023 A CN 110965023A
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 238000000151 deposition Methods 0.000 title claims abstract description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 119
- 239000010936 titanium Substances 0.000 claims abstract description 103
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 100
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 86
- 238000000034 method Methods 0.000 claims abstract description 57
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 56
- 239000013077 target material Substances 0.000 claims abstract description 46
- 230000008569 process Effects 0.000 claims abstract description 40
- 238000006243 chemical reaction Methods 0.000 claims abstract description 34
- 239000007789 gas Substances 0.000 claims abstract description 20
- 239000011261 inert gas Substances 0.000 claims abstract description 10
- -1 titanium ions Chemical class 0.000 claims description 37
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 24
- 229910052786 argon Inorganic materials 0.000 claims description 14
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 7
- 238000005137 deposition process Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 abstract description 27
- 230000000694 effects Effects 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 5
- 150000002500 ions Chemical class 0.000 abstract description 4
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 230000001737 promoting effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 107
- 239000010409 thin film Substances 0.000 description 7
- 230000008021 deposition Effects 0.000 description 5
- FFRBMBIXVSCUFS-UHFFFAOYSA-N 2,4-dinitro-1-naphthol Chemical compound C1=CC=C2C(O)=C([N+]([O-])=O)C=C([N+]([O-])=O)C2=C1 FFRBMBIXVSCUFS-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007736 thin film deposition technique Methods 0.000 description 2
- LCKIEQZJEYYRIY-UHFFFAOYSA-N Titanium ion Chemical compound [Ti+4] LCKIEQZJEYYRIY-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000007777 multifunctional material Substances 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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Abstract
The invention provides a titanium nitride film deposition method, which comprises the following steps: introducing process gas into the reaction chamber; applying direct current power to a titanium-containing target material to excite the process gas to form plasma, bombarding the titanium-containing target material, and depositing on a wafer to form a titanium nitride film; the process gas comprises nitrogen and inert gas, and the ratio of the direct current power to the flow of the nitrogen is a fixed value. The invention can improve the ionization rate of titanium-containing target material atoms, and enables the titanium-containing target material ions to move to the wafer at a certain speed to achieve the effect of bombarding the surface of the film, thereby inhibiting the cubic growth crystal orientation of the film, promoting the orthorhombic growth crystal orientation of the film, further changing the internal structure of the film material, reducing the internal defects of the film and obtaining the film with lower resistivity.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a titanium nitride film deposition method.
Background
Titanium nitride (TiN) films are widely used as a multifunctional material in diffusion barrier layers, local interconnects and other processes in integrated circuit fabrication. The magnetron sputtering technique for preparing titanium nitride has the advantages of high deposition rate, good film uniformity, less pollution, high productivity and the like, and is one of the most common Physical Vapor Deposition (PVD) methods in the metallization process of integrated circuits. And as the key size of the titanium nitride film becomes smaller, the depth-to-width ratio of the groove becomes larger and larger, and higher requirements are provided for the etching selectivity, the resistivity, the compactness and the like of the titanium nitride material.
The traditional low-temperature (or normal-temperature) magnetron sputtering technology (generally, direct-current voltage is applied to a target material) has smaller process window and increasingly prominent limitation, and the titanium nitride film has high resistivity, thereby reducing the electrical properties of the film and devices. In the prior art, in order to improve the resistivity of the titanium nitride film, a high-temperature base is adopted in the traditional magnetron sputtering technology, and bias RF is added to the high-temperature base to prepare the titanium nitride film with lower resistivity, but the method improves the resistivity of the film by changing the surface quality of the film, the resistivity is improved limitedly, and the high-requirement etching condition cannot be met; and the equipment structure and the process are complex, the equipment cost is high, and the industrialization requirement is not facilitated.
Therefore, a titanium nitride preparation process with simple process and low resistivity is urgently needed to be found.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art and provides a titanium nitride film deposition method.
To achieve the object of the present invention, there is provided a titanium nitride thin film deposition method comprising:
introducing process gas into the reaction chamber;
applying direct current power to a titanium-containing target material to excite the process gas to form plasma, bombarding the titanium-containing target material, and depositing on a wafer to form a titanium nitride film;
the process gas comprises nitrogen and inert gas, and the ratio of the direct current power to the flow of the nitrogen is a fixed value.
Optionally, the fixed value is 6 kw: 40 sccm.
Optionally, the flow rate of the nitrogen gas ranges from 40sccm to 80 sccm.
Optionally, the value of the dc power ranges from 6kw to 12 kw.
Optionally, the distance between the titanium-containing target and the wafer is greater than 200 mm and less than or equal to 400 mm.
Optionally, the applying a dc power to the titanium-containing target to excite the process gas to form a plasma, bombard the titanium-containing target, and deposit a titanium nitride film on the wafer, includes:
and adopting a magnetron with a preset size to enable the plasma to generate titanium ions when bombarding the titanium-containing target material, wherein the titanium ions continuously bombard the titanium nitride film in the deposition process of the titanium nitride film.
Optionally, the ratio of the area of the titanium-containing target material to the area of the magnetron ranges from 8 to 9.
Optionally, the flow ratio of the nitrogen gas to the inert gas ranges from 4 to 8.
Optionally, the inert gas is argon.
The invention has the following beneficial effects:
the titanium nitride film deposition method provided by the invention can introduce nitrogen with a specified flow value into the reaction chamber, apply corresponding direct current power to the titanium-containing target according to the flow value of the introduced nitrogen, maintain the ratio of the direct current power to the flow value of the nitrogen at a fixed value, enable the titanium-containing target to sputter a corresponding amount of titanium ions, enable the sputtered titanium ions to move to a wafer at a certain speed to achieve the effect of bombarding the surface of the film, compared with the prior art in which titanium atoms sputtered from the titanium-containing target react with the nitrogen to directly deposit the titanium nitride film (generally, metal ions are not formed to bombard the surface of the film), can change the transverse migration of the titanium nitride film when the surface of the wafer grows, inhibit the growth of columnar crystals of titanium nitride in the cubic growth crystal orientation, and promote the growth of columnar crystals in the oblique growth crystal orientation, thereby avoiding the growth of the growth crystal orientation towards the cubic growth crystal orientation from being too fast, reduce the internal defects of the film and change the performance of the film layer, thereby obtaining the titanium nitride film with lower resistivity. The method can be carried out at normal temperature, is convenient to operate, can reduce the equipment investment cost, can avoid the defects of film oxidation and the like caused by high temperature, overcomes the limitations of the existing equipment and process, and widens the application of the PVD technology.
Drawings
FIG. 1 is a flow chart of a method for depositing a titanium nitride film according to an embodiment of the present invention;
FIG. 2 is an X-ray diffraction pattern of a titanium nitride film obtained by the titanium nitride film deposition method according to an embodiment of the present invention;
FIG. 3 is a graph showing the resistivity variation of a titanium nitride film deposited by the method of the present invention.
Detailed Description
Reference will now be made in detail to the present application, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar parts or parts having the same or similar functions throughout. In addition, if a detailed description of the known art is not necessary for illustrating the features of the present application, it is omitted. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application.
It will be understood by those within the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present. Further, "connected" or "coupled" as used herein may include wirelessly connected or wirelessly coupled. As used herein, the term "and/or" includes all or any element and all combinations of one or more of the associated listed items.
The following describes the technical solutions of the present application and how to solve the above technical problems in specific embodiments with reference to the accompanying drawings.
Referring to fig. 1, a method for depositing a titanium nitride film according to an embodiment of the present invention includes:
a ventilation step S1, introducing process gas into the reaction chamber;
and a deposition step S2, in which DC power is applied to the titanium-containing target material to excite the process gas to form plasma, bombard the titanium-containing target material, and deposit a titanium nitride film on the wafer. The introduced process gas may include nitrogen and inert gas, and the ratio of the direct current power to the flow rate of the nitrogen is a fixed value.
In practical application, the inert gas is mainly used for ensuring normal starting and maintaining the process pressure in the reaction chamber, and cannot participate in the process reaction, so as to avoid introducing impurity elements to pollute the titanium nitride film. In particular, argon gas, which is not easily involved in the reaction and requires relatively low energy when ionized, may be used as the inert gas. The nitrogen is mainly used for reacting with titanium atoms and titanium ions sputtered from the titanium-containing target, so that the proportion coefficient of nitrogen elements and titanium elements in the titanium nitride film generated in the reaction chamber and the structure of the titanium nitride film are closely related to the nitrogen, the titanium atoms and the titanium ions in the reaction chamber.
Wherein, the proportionality coefficient of nitrogen element and titanium element in the titanium nitride film is related to the amount of nitrogen gas and the amount of titanium atom and titanium ion participating in the reaction. For example, if the amount of nitrogen gas participating in the reaction is larger than the total amount of titanium atoms and titanium ions, the proportionality coefficient of nitrogen element and titanium element in the titanium nitride film is larger than 1; if the amount of nitrogen participating in the reaction is less than the total amount of titanium atoms and titanium ions, the proportion coefficient of nitrogen and titanium in the generated titanium nitride film is less than 1; if the amount of nitrogen gas participating in the reaction is equal to the total amount of titanium atoms and titanium ions, the proportionality coefficient of nitrogen element and titanium element in the titanium nitride film is equal to 1. Wherein only the titanium nitride film with the proportionality coefficient of nitrogen element and titanium element equal to 1 is golden yellow; when the nitrogen element is less, the color of the generated titanium nitride film is lighter, and the titanium nitride film is usually silvery white; as the proportion coefficient of the nitrogen element and the titanium element is increased, the green color and the yellow color in the titanium nitride film are gradually increased; when the proportionality coefficient of nitrogen element and titanium element is close to 1, the green color in the titanium nitride film is gradually reduced, and the yellow color is mainly used; when the proportionality coefficient of the nitrogen element and the titanium element is more than 1, the yellow color of the titanium nitride film gradually becomes lighter, the color gradually deepens and the titanium nitride film gradually becomes red along with the increase of the nitrogen element.
The structure of the titanium nitride film is closely related to the form (atoms or ions) and the movement speed of the titanium element participating in the reaction. For example, if nitrogen reacts with titanium atoms, it is usually deposited directly as a thin film of titanium nitride because the velocity of movement of titanium atoms is generally low (relative to titanium ions). The nitrogen reacts with the titanium ions, because the movement speed of the titanium ions is generally higher (relative to titanium atoms), the titanium ions move towards the wafer at a certain speed to achieve the effect of bombarding the surface of the film, and react with the nitrogen in the movement process, because of the bombardment effect of the titanium ions, the generated titanium nitride film is relatively a titanium nitride film directly deposited, the texture is more compact, the internal structure of the titanium nitride film can be changed (the crystal growth direction is changed), the internal defects of the film can be reduced, and the resistivity of the titanium nitride film is lower. The form of the titanium element is generally closely related to the direct current power applied to the titanium target material, and in general, the higher the direct current power applied to the titanium target material is, the higher the moving speed of the ionized argon ions is, the higher the collision rate of the argon ions when bombarding the titanium target material is, and more titanium ions are sputtered.
Therefore, based on the relationship between the direct current power applied to the titanium target and the titanium ions and the relationship between the nitrogen element and the titanium element and the performance of the generated titanium nitride film, the nitrogen with the specified flow value is introduced into the reaction chamber while the normal starting and the reaction pressure in the reaction chamber are ensured, the corresponding direct current power is applied to the titanium-containing target according to the flow value of the introduced nitrogen, the ratio of the direct current power to the flow value of the nitrogen is maintained at a fixed value, the titanium target can sputter the titanium ions with the corresponding amount, the sputtered titanium ions move towards the wafer at a certain speed to achieve the effect of bombarding the surface of the film, compared with the prior art in which the titanium atoms sputtered from the titanium-containing target react with the nitrogen to directly deposit the titanium nitride film (usually, metal ions are not formed to bombard the surface of the film), the transverse migration of the titanium nitride film during the growth on the surface of the wafer can be changed, the method has the advantages that the growth of columnar crystals of titanium nitride in the cubic growth crystal direction (111 direction) is inhibited, and the growth of columnar crystals in the orthorhombic growth crystal direction (200 direction) is promoted, so that the condition that the growth crystal direction is too fast towards the cubic growth crystal direction can be avoided, the internal defects of the film are reduced, the performance of the film is changed, and the titanium nitride film with smooth surface, golden yellow (the ratio coefficient of nitrogen to titanium is 1:1) and low resistivity is obtained. The method can be carried out at normal temperature, is convenient to operate, can reduce the equipment investment cost, can avoid the defects of film oxidation and the like caused by high temperature, overcomes the limitations of the existing equipment and process, and widens the application of the PVD technology.
Before the deposition process is carried out, the pressure of the reaction chamber can be stabilized by controlling the flow of the process gas, and the pressure is maintained at a preset process pressure value, so that the stability of the reaction chamber is ensured.
It should be noted that before the process gas is introduced, the reaction chamber generally needs to be evacuated to achieve an ultra-vacuum state, for example, the vacuum degree may be less than or equal to 10-7Torr (Torr).
Optionally, the value range of the preset process pressure value is 5 × 10-3Torr～8×10-3And (5) Torr. Using higher chamber pressureThe method is a premise of obtaining the compressive stress (greater than 0), and the higher compressive stress can not only enlarge the process window and expand the application range, but also help to reduce the particle pollution of the titanium nitride film, increase the compactness of the titanium nitride film and reduce the resistivity of the titanium nitride film.
Optionally, the flow ratio of nitrogen to argon can be 4-8. From the above, the flow of argon is mainly used for ensuring normal glow starting, and the flow of nitrogen is mainly used for reacting with the titanium-containing target material, so that the flow value of nitrogen is closely related to the ratio of nitrogen to titanium in the generated film, and when the value range of the flow ratio of nitrogen to argon is selected to be 4-8, sufficient nitrogen can be provided on the premise of ensuring normal glow starting so as to generate the titanium nitride film.
Furthermore, the flow rate of the nitrogen can be within a range of 40sccm to 80sccm (standard condition milliliter per minute), the flow rate of the nitrogen is mainly used for reacting with the titanium-containing target material, so that the flow rate of the nitrogen is closely related to the ratio of the nitrogen element in the generated film to the titanium-containing target material element, and the nitrogen flow rate within the range can ensure that the nitrogen and the titanium-containing target material fully react on the premise of ensuring the process pressure, thereby avoiding or reducing the generation of N vacancies in the titanium nitride film forming process and further generating the golden titanium nitride of the nitrogen element and the titanium element in a ratio of 1: 1.
Optionally, before the venting step, the titanium nitride film deposition method may further include: the size of the target-substrate distance (the distance between the target material and the base) of the reaction chamber is adjusted to obtain a uniform and compact thin film. The size of the target base distance can be increased by increasing the height of the reaction chamber, so that the combination time of the nitrogen and the titanium ions sputtered from the titanium-containing target material is increased, the reaction of the nitrogen and the titanium ions is more sufficient, and the N vacancy and dangling bonds of the film layer are reduced in the process of forming the titanium nitride film, so that the titanium nitride film with more uniform, compact and smooth film layer and lower resistivity is obtained.
In practical application, the reaction chamber can be upgraded, and the size of the target base distance can be adjusted by changing the height of the reaction chamber. Specifically, the target base distance of the reaction chamber may be greater than 200 mm, and equal to or less than 400 mm. Based on the cavity height (the target base distance is equivalent to the cavity height) of the existing reaction chamber which is usually 60 mm-150 mm, the target base distance of the reaction chamber is set to be larger than 200 mm in the embodiment, so that the target base distance can be effectively increased, and the reaction of nitrogen and titanium ions is more sufficient; the target base distance of the reaction chamber is set to be less than or equal to 400 mm, so that the phenomenon that nitrogen and titanium ions react and move for too long time due to the overlarge target base distance and even titanium nitride molecules cannot move to a lower substrate and the like can be prevented, and the generation rate of the titanium nitride film is reduced. Based on the above principle, the target pitch of the reaction chamber is preferably 290 mm while ensuring both sufficient reaction of nitrogen with titanium ions and the rate of formation of the titanium nitride film.
Optionally, the applying of the dc power to the titanium-containing target to excite the process gas to form plasma, bombard the titanium-containing target, and deposit and form the titanium nitride film on the wafer may specifically include the following steps: and adopting a magnetron with a preset size to generate titanium ions when the plasma bombards the titanium-containing target material, wherein the titanium ions continuously bombard the titanium nitride film in the deposition process of the titanium nitride film.
In practical application, a magnetron can be arranged on the back of the titanium-containing target material, the magnetron comprises an inner magnetic pole and an outer magnetic pole, and can generate a magnetic field in a specific direction, so that electrons and positive ions can move in opposite directions, and therefore, the plasma can be promoted to bombard the titanium-containing target material, more titanium ions can be generated, and the reaction rate can be increased; the speed of the titanium ions moving to the titanium nitride film can be increased, so that the titanium ions are promoted to continuously bombard the titanium nitride film in the deposition process of the titanium nitride film. Moreover, the power density of the titanium-containing target material can be adjusted by adjusting the ratio of the area of the magnetron to the area of the titanium-containing target material. Specifically, the power density of the titanium-containing target material can be improved by reducing the projection area of the magnetron on the titanium-containing target material, after the power density of the titanium-containing target material is increased to a certain degree, the argon ions bombard the titanium-containing target material, more titanium ions can be sputtered from the titanium-containing target material, the ionization rate of the titanium-containing target material can be improved (theoretically, the ionization rate of the titanium-containing target material can be improved by improving the power of the titanium-containing target material, but the applied power cannot be large enough due to the limitation of equipment and the titanium-containing target material, the obtained ionization rate is limited, the impact rate of local argon ions and the titanium-containing target material can be increased by increasing the power density, the ionization rate of the titanium-containing target material can be improved to a certain degree, more ionized titanium ions can move to a wafer at a certain speed to play a role in bombarding the surface of the titanium nitride film, so that the growth of the titanium nitride film in the cubic growth crystal direction (111 direction) is inhibited, further changing the internal structure of the titanium nitride film material, reducing the internal defects of the titanium nitride film and obtaining the titanium nitride film with lower resistivity.
Optionally, the ratio of the area of the titanium-containing target material to the area of the magnetron ranges from 8 to 9. Therefore, the area of the magnetron is increased, the uniformity of the magnetic field can be improved, and more uniform sputtering of the titanium-containing target material is achieved; the area of the magnetron is reduced, the power density of the titanium-containing target material can be improved, the ionization rate of the titanium-containing target material is increased, two influences are comprehensively considered, the ratio range of the area of the titanium-containing target material to the area of the magnetron is selected to be 8-9 on the premise that the sputtering uniformity of the titanium-containing target material does not influence (or has less influence) the deposition effect (including the deposition rate and the electrical property of the film) of the titanium nitride film, the ionization rate of the titanium-containing target material can be effectively improved, generated titanium ions can run at high speed to a wafer on a base, the ion bombardment effect is achieved, and therefore the internal structure is adjusted in the titanium nitride film forming process, the film performance is changed, the resistivity of the titanium nitride film is reduced, and the electrical property of the titanium nitride film is improved.
Optionally, the fixed ratio is 6kw (kilowatts): 40 sccm. It will be appreciated that the fixed ratio is 6 kw: 40sccm is a ratio rather than a constant value, which can also be 3 kw: 200sccm, 9 kw: 60sccm, 12 kw: 80sccm, etc. On the premise of ensuring the normal starting, the fixed ratio is satisfied, the growth crystal orientation of the titanium nitride film is cubic growth crystal orientation (111 direction) and orthorhombic growth crystal orientation (200 direction), the lowest resistivity is 43.3 mu omega cm, the resistivity is close to the bulk resistance of 22 mu omega cm, and the film is golden yellow.
Optionally, the dc power may be less than or equal to 20kw, preferably greater than or equal to 6kw, and less than or equal to 12 kw.
Optionally, the flow rate of argon ranges from 5sccm to 10sccm, when the flow rate of argon is too small, normal glow cannot be started, when the flow rate of argon is too large, nitrogen flow may be caused to be small (when the pressure in the chamber is constant), thin films produced may be sparse, the resistivity is high, and the like, and when the flow rate of argon is in the range, normal glow can be ensured, and thin films with low resistivity can be obtained.
The technical solution provided by the present invention is explained by an example.
The titanium nitride film deposition method provided by the embodiment comprises the following steps:
1. the chamber is first evacuated to a high vacuum (generally < 10)-7Torr) and the base is at normal temperature, mixed gas of Ar and N2 is introduced, and the process pressure reaches a certain stable pressure (generally 0.5 mT-20 mT);
2. applying Direct Current (DC) power to the target, wherein the power forms a negative voltage on the target to promote Ar ions to bombard the target so that sputtered Ti atoms and Ti atoms+Moving the wafer to the base position, and reacting with nitrogen to deposit a TiN film; meanwhile, under the action of larger target power density, the ionization rate of Ti is improved, so that the produced Ti+The wafer at the base position is operated to achieve the effect of ion bombardment on the film, so that the internal structure is adjusted in the forming process of the TiN film, and the performance of the film layer is changed; the process pressure, sputtering power and target substrate spacing are substantially constant during deposition.
Typical embodiments of the invention are as follows:
1. firstly, moving the base to a process position, introducing a mixed gas of Ar and N2, wherein the flow range of Ar is 5-10 sccm, the flow range of N2 is 40-80 sccm, and the process pressure of the chamber is maintained at 5-8 mT (millitorr).
2. Second, N2: the proportion of Ar is controlled to be 4-8, the process pressure of the chamber is maintained to be 4.8-7.4 mTorr, the DC power range is 0-20000W, and 6000-12000W is preferable; under the premise of ensuring the normal starting, the proportion of the DC power to the N2 flow is a fixed value of 6 kw: at 40sccm, the TiN thin film has growth crystal orientations of (111) and (200), a minimum resistivity of 43.3 [ mu ] omega-cm and a bulk resistance close to 22 [ mu ] omega-cm, and the color of the film layer is golden yellow.
Referring to FIG. 2, an X-ray diffraction pattern of a titanium nitride film obtained by the deposition method of a titanium nitride film according to the exemplary embodiment is shown. As can be seen from fig. 2, the growth crystal orientation of the titanium nitride thin film obtained by the titanium nitride thin film deposition method of the present embodiment is in both directions of the cubic growth crystal orientation (111 direction) and the orthorhombic growth crystal orientation (200 direction), and the crystal growth of the thin film in the orthorhombic growth crystal orientation (200 direction) is larger than the crystal growth in the cubic growth crystal orientation (111 direction).
Referring to fig. 3, a resistivity variation curve of the titanium nitride film obtained by the titanium nitride film deposition method of the present embodiment is shown. As can be seen from fig. 3, when the ratio of the dc power to the flow rate of nitrogen is 6 kw: at 40sccm, the resistivity of the titanium nitride film obtained by the titanium nitride film deposition method provided by this embodiment ranges from 43.3 μ Ohm cm to 60 μ Ohm cm, and the lowest resistivity of the titanium nitride film is close to the resistivity of the bulk material (i.e., the resistivity of the macro material structure) under the stable glow starting condition.
It is to be understood that the above embodiments are merely exemplary embodiments that are employed to illustrate the principles of the present application, and that the present application is not limited thereto. It will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the application, and these changes and modifications are to be considered as the scope of the application.
In the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred device or element must have a particular orientation, be constructed in a particular orientation, and be operated, and thus should not be construed as limiting the present application.
The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless otherwise specified.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
In the description herein, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing is only a partial embodiment of the present application, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present application, and these modifications and decorations should also be regarded as the protection scope of the present application.
Claims (9)
1. A titanium nitride film deposition method, comprising:
introducing process gas into the reaction chamber;
applying direct current power to a titanium-containing target material to excite the process gas to form plasma, bombarding the titanium-containing target material, and depositing on a wafer to form a titanium nitride film;
the process gas comprises nitrogen and inert gas, and the ratio of the direct current power to the flow of the nitrogen is a fixed value.
2. The titanium nitride film deposition method of claim 1, wherein the fixed value is 6 kw: 40 sccm.
3. The method of claim 2, wherein the flow rate of the nitrogen gas is in a range of 40sccm to 80 sccm.
4. The method of claim 3, wherein the DC power is in the range of 6-12 kw.
5. The method of any of claims 1-4, wherein the distance between the titanium-containing target and the wafer is greater than 200 mm and equal to or less than 400 mm.
6. The method of any one of claims 1-4, wherein the applying a DC power to the titanium-containing target to excite the process gas to form a plasma, bombard the titanium-containing target, and deposit a titanium nitride film on the wafer, comprises:
and adopting a magnetron with a preset size to enable the plasma to generate titanium ions when bombarding the titanium-containing target material, wherein the titanium ions continuously bombard the titanium nitride film in the deposition process of the titanium nitride film.
7. The method according to claim 6, wherein the ratio of the area of the titanium-containing target to the area of the magnetron is in the range of 8 to 9.
8. The method of claim 3, wherein the flow ratio of the nitrogen gas to the inert gas is in the range of 4 to 8.
9. The method of claim 8 wherein the inert gas is argon.
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| CN115679272A (en) * | 2021-07-26 | 2023-02-03 | 北京北方华创微电子装备有限公司 | Method for preparing metal film by physical vapor deposition |
| CN117987775A (en) * | 2024-04-03 | 2024-05-07 | 粤芯半导体技术股份有限公司 | Physical vapor deposition method and device for metal nitride film |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115679272A (en) * | 2021-07-26 | 2023-02-03 | 北京北方华创微电子装备有限公司 | Method for preparing metal film by physical vapor deposition |
| CN117987775A (en) * | 2024-04-03 | 2024-05-07 | 粤芯半导体技术股份有限公司 | Physical vapor deposition method and device for metal nitride film |
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