CN118019355A - Multi-wafer stacking structure and preparation method - Google Patents
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Abstract
本申请实施例公开了一种多晶圆堆叠结构,该多晶圆堆叠结构包括:第一晶圆,所述第一晶圆包括多个第一芯片;第二晶圆,所述第二晶圆包括多个第二芯片;所述多个第二芯片划分成多个单元,每一个单元包括相同数目的至少两个第二芯片,所述多个第一芯片中的每一个第一芯片,与所述多个单元中每一个单元的第二芯片对应堆叠设置,且所述每一个第一芯片覆盖一个单元的第二芯片;其中,所述每一个第一芯片的尺寸,与所述第二晶圆上一个单元的尺寸相同,从而可以提高不同功能的芯片之间的堆叠效率。
An embodiment of the present application discloses a multi-wafer stacking structure, which includes: a first wafer, the first wafer includes a plurality of first chips; a second wafer, the second wafer includes a plurality of second chips; the plurality of second chips are divided into a plurality of units, each unit includes at least two second chips of the same number, each first chip in the plurality of first chips is stacked correspondingly to the second chip in each unit in the plurality of units, and each first chip covers a second chip in one unit; wherein the size of each first chip is the same as the size of a unit on the second wafer, thereby improving the stacking efficiency between chips with different functions.
Description
技术领域Technical Field
本申请实施例涉及半导体技术领域,尤其涉及一种多晶圆堆叠结构和制备方法。The embodiments of the present application relate to the field of semiconductor technology, and in particular to a multi-wafer stacking structure and a preparation method.
背景技术Background technique
随着通信、人工智能等技术的发展,大量的数据流动与转移的需求越来越大,支持诸如5G应用、人工智能等应用的硬件需要具有高速计算、低延时、多带宽以及系统集成等功能。为了满足硬件设备的功能需求,电子设备内部通常设置多个不同功能的芯片。因此在集成电路制造过程中,需要将逻辑、存储、通信或传感等多个不同类型的芯片堆叠在一起,以实现更强的性能和更多的功能。With the development of technologies such as communications and artificial intelligence, the demand for large amounts of data flow and transfer is increasing. Hardware that supports applications such as 5G and artificial intelligence needs to have functions such as high-speed computing, low latency, multiple bandwidths, and system integration. In order to meet the functional requirements of hardware devices, multiple chips with different functions are usually set up inside electronic devices. Therefore, in the process of integrated circuit manufacturing, multiple different types of chips such as logic, storage, communication, or sensing need to be stacked together to achieve stronger performance and more functions.
当前多芯片堆叠方式中,通常采用芯片-晶圆堆叠方式。也即是说,将某一类型的晶圆切割成独立的芯片,采用键合工艺,将所切割的独立芯片分别与另外一类型的晶圆上的芯片一一对齐、键合,从而完成不同类型间芯片的堆叠。当采用上述芯片-晶圆堆叠方式时,由于需要对晶圆进行切割,再将所切割的芯片逐一设置于所要键合的晶圆上,这就增加了芯片堆叠的工艺流程和成本,降低了芯片堆叠的产率。由此,如何提高不同功能的芯片之间的堆叠效率,成为需要解决的问题。Among the current multi-chip stacking methods, the chip-wafer stacking method is usually adopted. That is to say, a certain type of wafer is cut into independent chips, and a bonding process is adopted to align and bond the cut independent chips one by one with the chips on another type of wafer, thereby completing the stacking of chips of different types. When the above-mentioned chip-wafer stacking method is adopted, since the wafer needs to be cut and then the cut chips are set one by one on the wafer to be bonded, this increases the process flow and cost of chip stacking and reduces the yield of chip stacking. Therefore, how to improve the stacking efficiency between chips with different functions becomes a problem that needs to be solved.
发明内容Summary of the invention
本申请提供的多晶圆堆叠结构和制备方法,可以提高不同功能的芯片之间的堆叠效率。为达到上述目的,本申请采用如下技术方案:The multi-wafer stacking structure and preparation method provided in this application can improve the stacking efficiency between chips with different functions. To achieve the above purpose, this application adopts the following technical solutions:
第一方面,本申请实施例了一种多晶圆堆叠结构,该多晶圆堆叠结构包括:第一晶圆,所述第一晶圆包括多个第一芯片;第二晶圆,所述第二晶圆包括多个第二芯片;所述多个第一芯片中的每一个第一芯片,与所述多个第二芯片中的至少一个第二芯片堆叠设置,且所述每一个第一芯片覆盖所述至少一个第二芯片;所述多个第二芯片划分成多个单元,每一个单元包括相同数目的至少两个第二芯片,所述多个第一芯片中的每一个第一芯片,与所述多个单元中每一个单元的第二芯片对应堆叠设置,且所述每一个第一芯片覆盖一个单元的第二芯片;其中,所述每一个第一芯片的尺寸,与所述第二晶圆上一个单元的尺寸相同。In a first aspect, an embodiment of the present application provides a multi-wafer stacking structure, which includes: a first wafer, wherein the first wafer includes a plurality of first chips; a second wafer, wherein the second wafer includes a plurality of second chips; each first chip among the plurality of first chips is stacked with at least one second chip among the plurality of second chips, and each first chip covers the at least one second chip; the plurality of second chips are divided into a plurality of units, each unit includes at least two second chips of the same number, and each first chip among the plurality of first chips is stacked with a corresponding second chip of each unit among the plurality of units, and each first chip covers a second chip of a unit; wherein a size of each first chip is the same as a size of a unit on the second wafer.
本申请实施例提供的多晶圆堆叠结构,通过将需要堆叠的两类晶圆中,第一晶圆上第一芯片的尺寸,设置为与第二晶圆上、多个第二芯片所形成的一个单元的尺寸相同,通过该约束关系,无论第一晶圆上芯片的尺寸如何改变,第二晶圆上总会有多个芯片的尺寸与第一晶圆上芯片的尺寸相同,也即第一晶圆上的一个芯片可以同时与第二晶圆上一个或多个芯片对位键合,这样一来,可以不需要对第二晶圆进行重新设计,即可满足第二晶圆与各种尺寸的第一晶圆进行堆叠,从而可以降低芯片堆叠的工艺流程以及成本,还可以提高芯片堆叠的效率。The multi-wafer stacking structure provided in the embodiment of the present application sets the size of the first chip on the first wafer of the two types of wafers to be stacked to be the same as the size of a unit formed by multiple second chips on the second wafer. Through this constraint relationship, no matter how the size of the chip on the first wafer changes, there will always be multiple chips on the second wafer with the same size as the chip on the first wafer, that is, a chip on the first wafer can be aligned and bonded with one or more chips on the second wafer at the same time. In this way, there is no need to redesign the second wafer to meet the need for stacking the second wafer with first wafers of various sizes, thereby reducing the process flow and cost of chip stacking and improving the efficiency of chip stacking.
本申请实施例中,第二晶圆上所划分的多个单元中,每两个单元之间的第二芯片的间隔,大于一个单元内两芯片之间的间隔。此外,在一种可能的实现方式中,每两个单元之间还设置有测试电路,以对所述第二晶圆上的第二芯片进行测试。In the embodiment of the present application, in the plurality of units divided on the second wafer, the interval between the second chips of each two units is greater than the interval between the two chips in one unit. In addition, in a possible implementation, a test circuit is also provided between each two units to test the second chip on the second wafer.
在一种可能的实现方式中,所述每一个第一芯片的长度,是一个第二芯片的长度与一个单元内两个第二芯片之间的间距之和的整数倍。In a possible implementation, the length of each first chip is an integer multiple of the sum of the length of a second chip and the distance between two second chips in a unit.
在一种可能的实现方式中,所述每一个第一芯片的宽度,是一个第二芯片的宽度与一个单元内两个第二芯片之间的间距之和的整数倍。In a possible implementation, the width of each first chip is an integer multiple of the sum of the width of a second chip and the spacing between two second chips in a unit.
在一种可能的实现方式中,所述第二晶圆上的每一个单元,包括呈阵列排布的第二芯片,沿所述阵列的列方向,每一个第二芯片的长度为a,每两个第二芯片之间的间距为c,所述每一个第一芯片沿所述列方向的长度为M*a+(M-1)c,其中,a、c为正数,M为大于等于零的整数,M为沿所述列方向第二芯片的数目。In one possible implementation, each unit on the second wafer includes second chips arranged in an array, and along the column direction of the array, the length of each second chip is a, the spacing between each two second chips is c, and the length of each first chip along the column direction is M*a+(M-1)c, wherein a and c are positive numbers, M is an integer greater than or equal to zero, and M is the number of second chips along the column direction.
在一种可能的实现方式中,沿所述阵列的行方向,每一个第二芯片的宽度为b,每两个第二芯片之间的间距为d,所述每一个第一芯片沿所述行方向的宽度为N*b+(N-1)d,其中,b、d为正数,N为大于等于零的整数,N为沿所述行方向第二芯片的数目。In one possible implementation, along the row direction of the array, the width of each second chip is b, the spacing between each two second chips is d, and the width of each first chip along the row direction is N*b+(N-1)d, wherein b and d are positive numbers, N is an integer greater than or equal to zero, and N is the number of second chips along the row direction.
在一种可能的实现方式中,所述第一晶圆上的第一芯片为系统级芯片或者处理器芯片,所述第二晶圆上的第二芯片为存储器芯片。In a possible implementation, the first chip on the first wafer is a system-level chip or a processor chip, and the second chip on the second wafer is a memory chip.
第二方面,本申请实施例了一种用于制备多晶圆堆叠结构的方法,该方法包括:提供第一衬底,在所述第一衬底上形成多个第一芯片,以形成第一晶圆;提供第二衬底,在所述第二衬底上形成多个第二芯片,以形成第二晶圆;将所述第一晶圆与所述第二晶圆之间对位键合,以形成所述多晶圆堆叠结构;所述多个第二芯片划分成多个单元,每一个单元包括相同数目的至少两个第二芯片,所述多个第一芯片中的每一个第一芯片,与所述多个单元中每一个单元的第二芯片对应堆叠设置,且所述每一个第一芯片覆盖一个单元的第二芯片;其中,所述每一个第一芯片的尺寸,与所述第二晶圆上一个单元的尺寸相同。In a second aspect, the present application provides an embodiment of a method for preparing a multi-wafer stacking structure, the method comprising: providing a first substrate, forming a plurality of first chips on the first substrate to form a first wafer; providing a second substrate, forming a plurality of second chips on the second substrate to form a second wafer; aligning and bonding the first wafer and the second wafer to form the multi-wafer stacking structure; the plurality of second chips are divided into a plurality of units, each unit comprising at least two second chips of the same number, each first chip in the plurality of first chips is stacked correspondingly to the second chip in each unit in the plurality of units, and each first chip covers a second chip of a unit; wherein the size of each first chip is the same as the size of a unit on the second wafer.
在一种可能的实现方式中,所述每一个第一芯片的长度,是一个第二芯片的长度与一个单元内两个第二芯片之间的间距之和的整数倍。In a possible implementation, the length of each first chip is an integer multiple of the sum of the length of a second chip and the distance between two second chips in a unit.
在一种可能的实现方式中,所述每一个第一芯片的宽度,是一个第二芯片的宽度与一个单元内两个第二芯片之间的间距之和的整数倍。In a possible implementation manner, the width of each of the first chips is an integer multiple of the sum of the width of a second chip and the spacing between two second chips in a unit.
在一种可能的实现方式中,所述第一晶圆上的第一芯片为系统级芯片或者处理器芯片,所述第二晶圆上的第二芯片为存储器芯片。In a possible implementation, the first chip on the first wafer is a system-level chip or a processor chip, and the second chip on the second wafer is a memory chip.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
为了更清楚地说明本申请实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请实施例的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
图1A-图1B为本申请实施例提供的现有技术中芯片堆叠的结构示意图;1A-1B are schematic diagrams of the structure of chip stacking in the prior art provided by an embodiment of the present application;
图2为本申请实施例提供的一种晶圆堆叠结构的示意图;FIG2 is a schematic diagram of a wafer stacking structure provided in an embodiment of the present application;
图3为本申请实施例提供的一种内存刷新方法的流程示意图;FIG3 is a schematic diagram of a flow chart of a memory refresh method provided in an embodiment of the present application;
图4为本申请实施例提供的一种内存刷新模式切换流程的示意图。FIG. 4 is a schematic diagram of a memory refresh mode switching process provided in an embodiment of the present application.
具体实施方式Detailed ways
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本申请实施例一部分实施例,而不是全部的实施例。基于本申请实施例中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本申请实施例保护的范围。The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the embodiments of the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the embodiments of the present application.
本文中术语“和/或”,仅仅是一种描述关联对象的关联关系,表示可以存在三种关系,例如,A和/或B,可以表示:单独存在A,同时存在A和B,单独存在B这三种情况。The term "and/or" in this article is merely a description of the association relationship of associated objects, indicating that three relationships may exist. For example, A and/or B can mean: A exists alone, A and B exist at the same time, and B exists alone.
本申请实施例的说明书以及附图中的术语“第一”和“第二”等是用于区别不同的对象,或者用于区别对同一对象的不同处理,而不是用于描述对象的特定顺序。The terms "first" and "second" and the like in the description and drawings of the embodiments of the present application are used to distinguish different objects, or to distinguish different processing of the same object, rather than to describe a specific order of objects.
此外,本申请实施例的描述中所提到的术语“包括”和“具有”以及它们的任何变形,意图在于覆盖不排他的包含。例如包含了一系列步骤或单元的过程、方法、系统、产品或设备没有限定于已列出的步骤或单元,而是可选的还包括其他没有列出的步骤或单元,或可选的还包括对于这些过程、方法、产品或设备固有的其他步骤或单元。In addition, the terms "including" and "having" and any variations thereof mentioned in the description of the embodiments of the present application are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device including a series of steps or units is not limited to the listed steps or units, but may optionally include other steps or units that are not listed, or may optionally include other steps or units that are inherent to these processes, methods, products or devices.
需要说明的是,本申请实施例的描述中,“示例性地”或者“例如”等词用于表示作例子、例证或说明。本申请实施例中被描述为“示例性地”或者“例如”的任何实施例或设计方案不应被解释为比其他实施例或设计方案更优先或更具优势。确切而言,使用“示例性地”或者“例如”等词旨在以具体方式呈现相关概念。It should be noted that, in the description of the embodiments of the present application, words such as "exemplarily" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplarily" or "for example" in the embodiments of the present application should not be interpreted as having priority or advantage over other embodiments or designs. Specifically, the use of words such as "exemplarily" or "for example" is intended to present related concepts in a specific way.
为了满足硬件设备的功能需求,电子设备内部通常设置多个不同功能的芯片。因此在集成电路制造过程中,需要将逻辑、存储、通信或传感等多个不同类型的芯片堆叠在一起,以实现更强的性能和更多的功能。请参考图1A,图1A是现有技术中提供的一种芯片间堆叠方式。图1A所示的芯片堆叠方式为芯片-晶圆(CoW,chip on wafer)堆叠方式。该堆叠方式中,首先对晶圆B进行切割,将晶圆B上的芯片切割成多个独立的芯片j。然后通过多次键合工艺,将多个独立的芯片j逐一堆叠于晶圆A上的各芯片上,也即是说,每一次键合时,仅将一个芯片j与晶圆B上的一个芯片对位键合。从图1A中可以看出,上述CoW堆叠方式,首先需要对晶圆B进行切割,其次需要进行多次键合工艺,才能将晶圆B上的芯片j与晶圆A上的芯片一一对位键合在一起。这就增加了芯片堆叠的工艺流程和成本,降低了芯片堆叠的产率。In order to meet the functional requirements of hardware devices, multiple chips with different functions are usually set inside electronic devices. Therefore, in the process of integrated circuit manufacturing, it is necessary to stack multiple different types of chips such as logic, storage, communication or sensing together to achieve stronger performance and more functions. Please refer to Figure 1A, which is a chip stacking method provided in the prior art. The chip stacking method shown in Figure 1A is a chip-wafer (CoW, chip on wafer) stacking method. In this stacking method, wafer B is first cut, and the chip on wafer B is cut into multiple independent chips j. Then, through multiple bonding processes, multiple independent chips j are stacked one by one on each chip on wafer A, that is, each time bonding, only one chip j is aligned and bonded with a chip on wafer B. As can be seen from Figure 1A, the above-mentioned CoW stacking method first requires wafer B to be cut, and then multiple bonding processes are required to align and bond the chip j on wafer B with the chip on wafer A one by one. This increases the process flow and cost of chip stacking and reduces the yield of chip stacking.
为了降低芯片堆叠的工艺流程,请继续参考图1B,图1B是本申请实施例提供的现有技术中又一种芯片间堆叠方式的结构示意图。如图1B所示的芯片堆叠方式为晶圆-晶圆(WoW,Wafer on Wafer)堆叠方式。在该堆叠方式中,通过硅通孔(Through Silicon Via,TSV)互连技术,将整个晶圆A与晶圆B堆叠在一起,也即晶圆A上的芯片与晶圆B上的芯片一一精准对位键合。在该种实现方式中,为了提高晶圆A与晶圆B上各芯片之间对位的准确性,通常需要将晶圆A和晶圆B设计成相同的尺寸,此外还需要将晶圆A中芯片的大小与晶圆B中芯片的大小设计成相同的尺寸,芯片在晶圆A中的位置与芯片在晶圆B中的位置设计相同。在某些场景下,例如存储芯片(Memory Die)和系统级芯片(SOC Die)之间进行堆叠,由于系统级芯片包括各种尺寸,为了满足上述WoW堆叠方式,则需要设计与生产各种尺寸类型的存储晶圆,以匹配不同尺寸类型的系统级芯片。这就导致了需要设计、制造、测试和维护多套存储芯片,增加了工艺流程、芯片堆叠的成本高。In order to reduce the process flow of chip stacking, please continue to refer to Figure 1B, which is a structural schematic diagram of another chip stacking method in the prior art provided by the embodiment of the present application. The chip stacking method as shown in Figure 1B is a wafer-wafer (WoW, Wafer on Wafer) stacking method. In this stacking method, the entire wafer A and wafer B are stacked together by silicon through hole (Through Silicon Via, TSV) interconnection technology, that is, the chip on wafer A and the chip on wafer B are precisely aligned and bonded one by one. In this implementation, in order to improve the accuracy of alignment between each chip on wafer A and wafer B, it is generally necessary to design wafer A and wafer B to the same size, and it is also necessary to design the size of the chip in wafer A to the size of the chip in wafer B to the same size, and the position of the chip in wafer A is designed to be the same as the position of the chip in wafer B. In some scenarios, such as stacking memory chips (Memory Die) and system-level chips (SOC Die), since system-level chips include various sizes, in order to meet the above-mentioned WoW stacking method, it is necessary to design and produce memory wafers of various sizes to match system-level chips of different sizes. This leads to the need to design, manufacture, test and maintain multiple sets of memory chips, which increases the process flow and the cost of chip stacking.
综上可以看出,现有技术的芯片堆叠方式中,无论是CoW堆叠方式还是WoW堆叠方式,均增加了工艺流程,提高了芯片堆叠成本。本申请实施例提供的芯片堆叠方式,通过将需要堆叠的两类晶圆中,第一晶圆上芯片的尺寸,设置为第二类晶圆上、芯片尺寸与两芯片间距之和的整数倍,通过该约束关系,无论第一晶圆上芯片的尺寸如何改变,第二类晶圆上总会有一个或多个芯片的尺寸与第一晶圆上芯片的尺寸相同,也即第一晶圆上的一个芯片可以同时与第二类晶圆上一个或多个芯片对位键合,这样一来,可以不需要对第二类晶圆进行重新设计,即可满足第二类晶圆与各种尺寸的第一晶圆进行堆叠,从而可以降低芯片堆叠的工艺流程以及成本,还可以提高芯片堆叠的效率。下面结合图2~图4所示的实施例,对本申请实施例提供的多晶圆堆叠结构进行更为详细的描述。From the above, it can be seen that in the chip stacking method of the prior art, whether it is the CoW stacking method or the WoW stacking method, the process flow is increased and the chip stacking cost is increased. The chip stacking method provided in the embodiment of the present application sets the size of the chip on the first wafer of the two types of wafers to be stacked to an integer multiple of the sum of the chip size on the second type of wafer and the spacing between the two chips. Through this constraint relationship, no matter how the size of the chip on the first wafer changes, there will always be one or more chips on the second type of wafer that have the same size as the chip on the first wafer, that is, a chip on the first wafer can be aligned and bonded with one or more chips on the second type of wafer at the same time. In this way, there is no need to redesign the second type of wafer to meet the stacking of the second type of wafer with the first wafer of various sizes, thereby reducing the process flow and cost of chip stacking, and improving the efficiency of chip stacking. The multi-wafer stacking structure provided in the embodiment of the present application is described in more detail below in conjunction with the embodiments shown in Figures 2 to 4.
请参考图2,图2是本申请实施例提供的多晶圆堆叠结构中、各晶圆上芯片的排布结构示意图。如图2所示,该多晶圆堆叠结构中,包括晶圆A和晶圆B。其中,晶圆A的尺寸与晶圆B的尺寸相同。晶圆A上芯片i的尺寸小于晶圆B上芯片j的尺寸。本申请实施例中,晶圆A上的芯片i可以划分成多个单元,每一个单元包括相同数目的芯片i。其中,i为大于等于2的整数。晶圆B上一个芯片j的尺寸,与晶圆A上一个单元的尺寸相同。也即是说,晶圆B上一个芯片j,覆盖晶圆B上至少两个芯片i,且每一个芯片j所覆盖的至少两个芯片i不同。Please refer to Figure 2, which is a schematic diagram of the arrangement structure of chips on each wafer in the multi-wafer stacking structure provided in an embodiment of the present application. As shown in Figure 2, the multi-wafer stacking structure includes wafer A and wafer B. Among them, the size of wafer A is the same as the size of wafer B. The size of chip i on wafer A is smaller than the size of chip j on wafer B. In an embodiment of the present application, chip i on wafer A can be divided into multiple units, and each unit includes the same number of chips i. Among them, i is an integer greater than or equal to 2. The size of a chip j on wafer B is the same as the size of a unit on wafer A. In other words, a chip j on wafer B covers at least two chips i on wafer B, and at least two chips i covered by each chip j are different.
本申请实施例中,晶圆B上所划分的多个单元中,每两个单元之间的芯片i的间隔,大于一个单元内两芯片i之间的间隔。如图2所示,晶圆B上,单元1内两个芯片之间的距离,小于分别位于单元1与单元2的两芯片之间的距离。此外,在一种可能的实现方式中,每两个单元之间还设置有测试电路,以对晶圆B上的芯片i进行测试。In the embodiment of the present application, in the multiple units divided on the wafer B, the interval between the chips i between each two units is greater than the interval between the two chips i in one unit. As shown in FIG2 , on the wafer B, the distance between the two chips in unit 1 is less than the distance between the two chips in unit 1 and unit 2, respectively. In addition, in a possible implementation, a test circuit is also provided between each two units to test the chip i on the wafer B.
在一种可能的实现方式中,芯片j的长度、是芯片i的长度与一个单元内两芯片i之间的间距之和的整数倍,芯片j的宽度,是芯片i的宽度与一个单元内两芯片i之间的间距之和的整数倍。In one possible implementation, the length of chip j is an integer multiple of the sum of the length of chip i and the spacing between two chips i in a unit, and the width of chip j is an integer multiple of the sum of the width of chip i and the spacing between two chips i in a unit.
在一种可能的实现方式中,晶圆A上一个单元可以包括一个芯片i,在该种情况下,晶圆B上的芯片j与晶圆A上的芯片i一一对应堆叠。In one possible implementation, a unit on wafer A may include a chip i. In this case, chip j on wafer B is stacked with chip i on wafer A in a one-to-one correspondence.
在一种可能的实现方式中,晶圆A所划分的多个单元中,每一个单元中的芯片形成M*N的阵列。其中,M为芯片i沿行方向的数目,N为芯片j沿列方向的数目,M和N均为正整数。此外,沿列方向,芯片i的长度为a,两个芯片之间的间距为c;沿行方向,芯片i的宽度为b,两个芯片i之间的间距为d。则沿上述列方向,晶圆B上芯片j的长度为M*a+(M-1)c,沿上述行方向,晶圆B上芯片的宽度为N*b+(N-1)d,如图3所示。图3示意性的示出了芯片i的尺寸以及芯片j的尺寸。In one possible implementation, in the multiple units divided by wafer A, the chips in each unit form an M*N array. Wherein, M is the number of chips i along the row direction, N is the number of chips j along the column direction, and both M and N are positive integers. In addition, along the column direction, the length of chip i is a, and the spacing between two chips is c; along the row direction, the width of chip i is b, and the spacing between two chips i is d. Then, along the above-mentioned column direction, the length of chip j on wafer B is M*a+(M-1)c, and along the above-mentioned row direction, the width of the chip on wafer B is N*b+(N-1)d, as shown in Figure 3. Figure 3 schematically shows the size of chip i and the size of chip j.
继续参考图2,图2中示出了晶圆A上每四个芯片i为一个单元,该四个芯片i形成2*2的阵列。晶圆B上的一个芯片j,与晶圆A上四个芯片i所形成的一个单元的尺寸相同。也即是说,M为2,N为2,芯片j的长度为2a+c,芯片j的宽度为2b+c。Continuing to refer to FIG. 2 , FIG. 2 shows that every four chips i on wafer A form a unit, and the four chips i form a 2*2 array. A chip j on wafer B has the same size as a unit formed by four chips i on wafer A. That is, M is 2, N is 2, the length of chip j is 2a+c, and the width of chip j is 2b+c.
需要说明的是,理想情况下,如图2所示的一个芯片j,覆盖2*2阵列的芯片i。实际生产过程中,某些情况下,由于晶圆尺寸等各种问题,晶圆A的某些边缘未设置芯片i,则芯片j有可能仅覆盖三个芯片i,芯片j除了覆盖该三个芯片i之外,还会覆盖晶圆A上的空白区域。在该种情况下,可以认为芯片j的尺寸,约等于晶圆A上一个芯片单元的尺寸。It should be noted that, ideally, one chip j, as shown in FIG2 , covers the chips i in the 2*2 array. In the actual production process, in some cases, due to various issues such as wafer size, some edges of wafer A are not provided with chips i, and chip j may only cover three chips i. In addition to covering the three chips i, chip j also covers the blank area on wafer A. In this case, it can be considered that the size of chip j is approximately equal to the size of a chip unit on wafer A.
通过图2所示的晶圆、图3所示的芯片在各晶圆上的尺寸可以看出,本申请实施例通过将晶圆B上一个芯片j的尺寸,设置成与晶圆A上一个单元的尺寸相同,则无论晶圆B上芯片的尺寸如何变化,晶圆B上的芯片j总可以与晶圆A上至少一个芯片i对位键合,从而可以直接对晶圆A和晶圆B进行键合,实现芯片i和芯片j之间的堆叠。由此,本申请实施例提供的多晶圆堆叠结构,当晶圆A上芯片的尺寸变化时,晶圆B上芯片的尺寸不需要重新设计,即可与晶圆A上的芯片相匹配,从而与图1A所示的现有技术相比,不需要对晶圆A进行重新切割,仅需要将晶圆A与晶圆B之间进行键合即可实现芯片堆叠,从而可以降低了芯片堆叠的产率;与图1B所示的现有技术相比,可以不需要设计与生产各种尺寸的晶圆A,以匹配不同尺寸的类型的晶圆B,可以降低晶圆A的设计与制造成本。It can be seen from the sizes of the wafers shown in FIG. 2 and the chips shown in FIG. 3 on each wafer that the embodiment of the present application sets the size of a chip j on wafer B to be the same as the size of a unit on wafer A. Therefore, no matter how the size of the chip on wafer B changes, the chip j on wafer B can always be aligned and bonded with at least one chip i on wafer A, so that wafer A and wafer B can be directly bonded to achieve stacking between chip i and chip j. Therefore, in the multi-wafer stacking structure provided by the embodiment of the present application, when the size of the chip on wafer A changes, the size of the chip on wafer B does not need to be redesigned to match the chip on wafer A, so that compared with the prior art shown in FIG. 1A, there is no need to re-cut wafer A, and only wafer A and wafer B need to be bonded to achieve chip stacking, thereby reducing the yield of chip stacking; compared with the prior art shown in FIG. 1B, there is no need to design and produce wafers A of various sizes to match wafers B of different sizes, which can reduce the design and manufacturing cost of wafer A.
在图2中示出了晶圆B上的一个芯片j,与晶圆A上四个芯片i所形成的2*2阵列的一个单元的尺寸相同。在其他可能的实现方式中,晶圆A上的一个芯片i即为一个单元,晶圆B上的一个芯片j,还可以与晶圆A上一个芯片i的尺寸相同;另外,晶圆B上的两个芯片i即为一个单元,晶圆B上的一个芯片j,还可以与晶圆A上两个芯片i所形成的一个单元的尺寸相同。请继续参考图4,图4是本申请实施例提供的又一个晶圆A上的芯片i与晶圆B上的芯片j之间相对位置关系的示意图。其中,图4为俯视图。如图4所示,晶圆A上每三个芯片i形成一个单元,该三个芯片形成1*3的阵列。晶圆B上的一个芯片j,与晶圆A上三个芯片i所形成的一个单元的尺寸相同。也即是说,M为3,N为1,芯片j的长度为3a+2c,芯片j的宽度为b。FIG2 shows a chip j on wafer B, which is the same size as a unit of a 2*2 array formed by four chips i on wafer A. In other possible implementations, a chip i on wafer A is a unit, and a chip j on wafer B can also be the same size as a chip i on wafer A; in addition, two chips i on wafer B are a unit, and a chip j on wafer B can also be the same size as a unit formed by two chips i on wafer A. Please continue to refer to FIG4, which is a schematic diagram of the relative position relationship between another chip i on wafer A and a chip j on wafer B provided in an embodiment of the present application. Among them, FIG4 is a top view. As shown in FIG4, every three chips i on wafer A form a unit, and the three chips form a 1*3 array. A chip j on wafer B is the same size as a unit formed by three chips i on wafer A. That is to say, M is 3, N is 1, the length of chip j is 3a+2c, and the width of chip j is b.
本申请实施例提供的多晶圆上芯片之间的键合关系,可以应用于多种芯片中。例如,如图2~图4所示的晶圆A,可以为存储晶圆,存储晶圆上的芯片为存储器芯片。该存储器芯片可以包括但不限于:高速缓冲存储器(cache)芯片、随机存取存储器(Random AccessMemory,RAM)芯片、只读存储器(Read Only Memory,ROM)芯片或其他存储器芯片。如图2~图4所示的晶圆A,可以为片上系统芯片,也可以为处理器芯片,该处理器芯片可以包括但不限于:应用处理(Application Processor,AP)芯片、微机电系统(Micro-Electro-Mechanical System,MEMS)芯片、微波射频芯片、专用集成电路(ApplicationSpecificIntegrated Circuit,简称ASIC)芯片等芯片。上述应用处理芯片或专用集成电路芯片在具体应用中可以是中央处理器(Central Processing Unit,CPU)芯片、图像处理器(GraphicsProcessing Unit,GPU)芯片、人工智能处理器芯片,例如,神经网络处理器(NetworkProcessing Unit,NPU)芯片等。The bonding relationship between chips on multiple wafers provided in the embodiment of the present application can be applied to a variety of chips. For example, wafer A as shown in Figures 2 to 4 can be a storage wafer, and the chip on the storage wafer is a memory chip. The memory chip may include but is not limited to: a cache chip, a random access memory (Random Access Memory, RAM) chip, a read-only memory (Read Only Memory, ROM) chip or other memory chips. Wafer A as shown in Figures 2 to 4 can be a system-on-chip chip or a processor chip, and the processor chip may include but is not limited to: an application processing (Application Processor, AP) chip, a micro-electro-mechanical system (Micro-Electro-Mechanical System, MEMS) chip, a microwave radio frequency chip, an application-specific integrated circuit (Application Specific Integrated Circuit, referred to as ASIC) chip and other chips. The above-mentioned application processing chip or application-specific integrated circuit chip can be a central processing unit (Central Processing Unit, CPU) chip, an image processor (Graphics Processing Unit, GPU) chip, an artificial intelligence processor chip, for example, a neural network processor (Network Processing Unit, NPU) chip, etc.
本申请实施例中,可以采用刻蚀、键合等标准工艺,将如图2~图4所示的晶圆A上的芯片与晶圆B上的芯片堆叠在一起。具体的,可以首先在硅衬底上制造带有硅通孔(TSV,Through Silicon Via)的芯片i,形成晶圆A;在另外一个硅衬底上制造带有TSV的芯片j,形成晶圆B。然后,基于芯片j的长度、是芯片i的长度与两芯片i之间的间距之和的整数倍,以及芯片j的宽度、是芯片i的宽度与两芯片i之间的间距之和的整数倍的原则,将晶圆A与晶圆B对齐,最后,利用晶圆键合工艺将晶圆A上的芯片与晶圆B上的芯片进行键合,从而使得芯片j与至少一个芯片i堆叠在一起。In the embodiment of the present application, standard processes such as etching and bonding can be used to stack the chips on wafer A and the chips on wafer B as shown in Figures 2 to 4. Specifically, a chip i with a through silicon via (TSV) can be first manufactured on a silicon substrate to form wafer A; and a chip j with TSV can be manufactured on another silicon substrate to form wafer B. Then, based on the principle that the length of chip j is an integer multiple of the sum of the length of chip i and the spacing between the two chips i, and the width of chip j is an integer multiple of the sum of the width of chip i and the spacing between the two chips i, wafer A is aligned with wafer B, and finally, the chip on wafer A is bonded to the chip on wafer B using a wafer bonding process, so that chip j is stacked with at least one chip i.
以上所述,仅为本申请的具体实施方式,但本申请的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本申请揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本申请的保护范围之内。因此,本申请的保护范围应所述以权利要求的保护范围为准。The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.
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US8493089B2 (en) * | 2011-04-06 | 2013-07-23 | International Business Machines Corporation | Programmable logic circuit using three-dimensional stacking techniques |
CN103985648B (en) * | 2014-05-23 | 2017-01-04 | 格科微电子(上海)有限公司 | The wafer-level packaging method of quasiconductor and semiconductor package part |
WO2021081855A1 (en) * | 2019-10-30 | 2021-05-06 | 华为技术有限公司 | Chip package on package structure and packaging method therefor, and electronic device |
CN112151444B (en) * | 2020-09-28 | 2023-04-07 | 武汉新芯集成电路制造有限公司 | Matching design method of wafer, wafer bonding structure and chip bonding structure |
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2022
- 2022-11-09 CN CN202211397115.XA patent/CN118019355A/en active Pending
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2023
- 2023-06-30 WO PCT/CN2023/105340 patent/WO2024098818A1/en unknown
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